CN108400196A - 一种具有超晶格结构氮化镓基紫外光电探测器及其制备方法 - Google Patents
一种具有超晶格结构氮化镓基紫外光电探测器及其制备方法 Download PDFInfo
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Abstract
本发明公开了一种具有超晶格结构氮化镓基紫外光电探测器及其制备方法。该紫外光电探测器的结构包括:由下至上依次设置的衬底(101)、缓冲层(102)、n型GaN层(103)、非掺杂i型NiO/GaN超晶格吸收层(104)、p型GaN层(105)、p型MgNiO层(106),在n型GaN层(103)上引出的n型欧姆电极(108),在p型MgNiO层(106)上引出的p型欧姆电极(107)。本发明提供的采用多周期非掺杂i型NiO/GaN超晶格作为吸收层的结构,能够有效解决紫外光电探测器中由于电子和空穴的离化系数相近而导致的紫外探测器不灵敏,有助于提高探测器对紫外信号的响应度和稳定性。
Description
技术领域
本发明涉及半导体光电子器件领域,具体涉及一种具有超晶格结构氮化镓基紫外光电探测器及其制备方法。
背景技术
紫外光电探测器在军用和民用方面都具有重要的应用价值和发展前景,如:紫外告警与制导、碳氢化合物燃烧火焰的探测、生化基因的检测、紫外天文学的研究、短距离的通信以及皮肤病的治疗等。PIN结构紫外光电探测器具有体积小、重量轻、寿命长、抗震性好、工作电压低、耐高温、耐腐蚀、抗辐照、量子效率高和无需滤光片等优点,最近已成为光电探测领域的研究热点。
NiO作为一种本征P型直接带隙半导体材料,与GaN形成异质结结构的紫外探测器具有优良的性能,原因在于异质结结构中内建电场的存在可以大大促进光生电子空穴对的有效分离,提高紫外探测器的探测灵敏度和响应速度。由于NiO材料自身的优点,展现了极好紫外探测性能,并且其具有工作电压较低、能耗较小、体积小、重量轻等优点,近年来已成为紫外探测研究的热点。
NiO薄膜材料的常规制备方法包括水浴法、煅烧法等。这些方法维持的周期一般而言都比较长,耗能较多,且重复性较差。与此同时,材料在与表面淀积的金属形成肖特基结时界面存在大量的缺陷,使得有源区变薄,遂穿机制明显,导致暗电流很大,因而严重制约了此类结构探测器的探测性能的提高。
目前报道的NiO纳米线制作的紫外光探测器,生长方向垂直于基底平面,并依靠部分未溶解的模板作为支撑形成阵列。虽然有序性有所提高,但与电极部分接触少,使得探测器的灵敏度和稳定性较差。如何有效解决紫外光电探测器中由于电子和空穴的离化系数相近而导致的紫外探测器不灵敏,进一步提高探测器对紫外信号的响应度是紫外光电探测器目前存在的一大难题。
发明内容
为了克服上述现有技术存在的不足,本发明的目的在于提供一种多周期非掺杂超晶格作为吸收层的结构,能够有效解决紫外光电探测器中由于电子和空穴的离化系数相近而导致的紫外探测器不灵敏,有助于提高探测器对紫外信号的响应度和稳定性。由于多周期超晶格结构的高吸收系数、高横向载流子迁移率和强极化效应,可以有效增加吸收层的电场,有助于提高紫外探测器的响应度。
为实现上述目的,本发明采用的技术方案为:
一种具有超晶格结构氮化镓基紫外光电探测器,包括由下至上依次设置的衬底、缓冲层、n型GaN层、非掺杂i型NiO/GaN超晶格吸收层、p型GaN层、p型MgNiO层,在n型GaN层上引出的n型欧姆电极,在p型MgNiO层上引出的p型欧姆电极。
其特征在于所述的非掺杂i型吸收层由多周期NiO/GaN超晶格组成。
优选地,所述衬底为为蓝宝石晶体。
优选地,所述缓冲层为GaN,且厚度为200~800nm,所述n型GaN厚度为400~1000nm,所述非掺杂i型NiO/GaN超晶格吸收层厚度为100~200nm,所述p型GaN层厚度为50~100nm,所述p型MgNiO层厚度为100~200nm。
优选地,所述非掺杂i型NiO/GaN超晶格吸收层中,单周期中NiO层厚度为5~10nm,GaN层厚度为5~10nm。
优选地,所述非掺杂i型NiO/GaN超晶格吸收层中,超晶格的重复周期数为1~10个。
优选地,所述p型MgNiO层中空穴浓度介于1016~1018cm-3之间。
优选地,所述n型欧姆电极为Ti/Al/Ti/Au合金电极,p型欧姆电极为Ni/Au合金电极。
本发明还提供了上述一种具有超晶格结构氮化镓基紫外光电探测器的制备方法,其步骤包括:
(1)在衬底上生长一层缓冲层;
(2)在缓冲层上生长一层n型GaN层;
(3)在n型GaN层上生长一层非掺杂i型NiO/GaN超晶格吸收层;
(4)在非掺杂i型NiO/GaN超晶格吸收层上生长一层p型GaN层;
(5)在p型GaN层上生长一层p型MgNiO层;
(6)在p型MgNiO层上进行台面刻蚀,露出n型GaN层;
(7)在p型MgNiO层上蒸镀p型Ni/Au欧姆电极,并且对电极进行退火处理;
(8)在n型GaN层台面上蒸镀n型Ti/Al/Ti/Au欧姆电极,并且对电极进行退火处理。
本技术方案的有益效果为:本发明提供的是一种采用多周期NiO/GaN超晶格作为吸收层的新型PIN结构紫外探测器。由于多周期超晶格结构的高吸收系数、高横向载流子迁移率和强极化效应,可有效增加吸收层的电场,因此能够有效实现空穴和电子对的空间上的分离。有助于提高探测器对紫外信号的响应度和稳定性。
附图说明
图1是实施例中的一种具有超晶格结构氮化镓基紫外光电探测器结构示意图;
其中数字的含义为:衬底101、缓冲层102、n型GaN层103、非掺杂i型NiO/GaN超晶格吸收层104、p型GaN层105、p型MgNiO层106,在p型MgNiO层106上引出的p型欧姆电极107,在n型GaN层103上引出的n型欧姆电极108。
具体实施方式
实施例1
下面结合附图对本发明作进一步的说明。
如图1所示为一种具有超晶格结构氮化镓基紫外光电探测器,包括由下至上依次设置的蓝宝石衬底(101)、GaN缓冲层(102)、n型GaN层(103)、非掺杂i型NiO/GaN超晶格吸收层(104)、p型GaN层(105)、p型MgNiO层(106),在p型MgNiO层(106)上引出的p型欧姆电极(107),在n型GaN层(103)上引出的n型欧姆电极(108)。
所述衬底(101)为C面蓝宝石晶体。
所述缓冲层(102)为GaN层,厚度为400nm。
所述n型GaN层(103)的厚度为700nm,利用Si进行掺杂,其中Si的掺杂浓度大于8×1019cm-3。
所述非掺杂i型NiO/GaN超晶格吸收层(104),单周期中NiO层厚度为5nm,GaN层厚度为10nm。
所述非掺杂i型NiO/GaN超晶格吸收层(104)的重复周期数为10个。
所述p型GaN层(105)的厚度为60nm,采用的Mg进行掺杂,并且掺杂浓度为5×1017cm-3。
所述p型MgNiO层(106)的厚度为200nm,其中的空穴浓度为5×1016cm-3。
在p型MgNiO层(106)上进行光刻,刻蚀出电极台面,露出n型GaN层(103),对刻蚀后的台面进行处理。
在n型GaN层(103)台面上蒸镀n型欧姆电极(108),电极为Ni/Au合金电极,电极尺寸为0.3×0.3mm2,蒸镀后在850℃的N2环境下退火2分钟。
在p型MgNiO层(106)上蒸镀p型欧姆电极(107),电极为Ti/Al/Ti/Au合金电极,蒸镀后在600℃的N2环境下退火3分钟。
实施例2
如图1所示为一种具有超晶格结构氮化镓基紫外光电探测器,包括由下至上依次设置的蓝宝石衬底(101)、GaN缓冲层(102)、n型GaN层(103)、非掺杂i型NiO/GaN超晶格吸收层(104)、p型GaN层(105)、p型MgNiO层(106),在p型MgNiO层(106)上引出的p型欧姆电极(107),在n型GaN层(103)上引出的n型欧姆电极(108)。
所述衬底(101)为C面硅晶体。
所述缓冲层(102)为GaN层,厚度为200nm。
所述n型GaN层(103)的厚度为400nm,利用Si进行掺杂,其中Si的掺杂浓度大于5×1019cm-3。
所述非掺杂i型NiO/GaN超晶格吸收层(104),单周期中NiO层厚度为7nm,GaN层厚度为5nm。
所述非掺杂i型NiO/GaN超晶格吸收层(104)的重复周期数为1个。
所述p型GaN层(105)的厚度为20nm,采用的Mg进行掺杂,并且掺杂浓度为5×1016cm-3。
所述p型MgNiO层(106)的厚度为100nm,其中的空穴浓度为5×1017cm-3。
在p型MgNiO层(106)上进行光刻,刻蚀出电极台面,露出n型GaN层(103),对刻蚀后的台面进行处理。
在n型GaN层(103)台面上蒸镀n型欧姆电极(108),电极为Ni/Au合金电极,电极尺寸为0.3×0.3mm2,蒸镀后在850℃的N2环境下退火2分钟。
在p型MgNiO层(106)上蒸镀p型欧姆电极(107),电极为Ti/Al/Ti/Au合金电极,蒸镀后在600℃的N2环境下退火3分钟。
实施例3
如图1所示为一种具有超晶格结构氮化镓基紫外光电探测器,包括由下至上依次设置的蓝宝石衬底(101)、GaN缓冲层(102)、n型GaN层(103)、非掺杂i型NiO/GaN超晶格吸收层(104)、p型GaN层(105)、p型MgNiO层(106),在p型MgNiO层(106)上引出的p型欧姆电极(107),在n型GaN层(103)上引出的n型欧姆电极(108)。
所述衬底(101)为C面氮化镓晶体。
所述缓冲层(102)为GaN层,厚度为1000nm。
所述n型GaN层(103)的厚度为1000nm,利用Si进行掺杂,其中Si的掺杂浓度大于8×1019cm-3。
所述非掺杂i型NiO/GaN超晶格吸收层(104),单周期中NiO层厚度为10nm,GaN层厚度为7nm。
所述非掺杂i型NiO/GaN超晶格吸收层(104)的重复周期数为5个。
所述p型GaN层(105)的厚度为100nm,采用的Mg进行掺杂,并且掺杂浓度为5×1016cm-3。
所述p型MgNiO层(106)的厚度为400nm,其中的空穴浓度为5×1018cm-3。
在p型MgNiO层(106)上进行光刻,刻蚀出电极台面,露出n型GaN层(103),对刻蚀后的台面进行处理。
在n型GaN层(103)台面上蒸镀n型欧姆电极(108),电极为Ni/Au合金电极,电极尺寸为0.3×0.3mm2,蒸镀后在850℃的N2环境下退火2分钟。
在p型MgNiO层(106)上蒸镀p型欧姆电极(107),电极为Ti/Al/Ti/Au合金电极,蒸镀后在600℃的N2环境下退火3分钟。
必须指出的是:本发明不仅适用于氮化镓基紫外光电探测器,对于肖特基势垒型氮化镓基紫外雪崩光电探测器也同样适用。
以上所述仅是本发明的优选实施方式,应当指出:对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以根据实际需要做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。
Claims (7)
1.一种具有超晶格结构氮化镓基紫外光电探测器,其特征在于:由下至上依次设置的衬底(101)、缓冲层(102)、n型GaN层(103)、非掺杂i型NiO/GaN超晶格吸收层(104)、p型GaN层(105)、p型MgNiO层(106),在n型GaN层(103)上引出的n型欧姆电极(108),在p型MgNiO层(106)上引出的p型欧姆电极(107)。
2.根据权利要求1所述的一种具有超晶格结构氮化镓基紫外光电探测器,其特征在于:所述非掺杂i型NiO/GaN超晶格吸收层(104)中,单周期中NiO层厚度为5~10nm,GaN层厚度为5~10nm。
3.根据权利要求1所述的一种具有超晶格结构氮化镓基紫外光电探测器,其特征在于:所述非掺杂i型NiO/GaN超晶格吸收层(104)中,超晶格的重复周期数为1~10个。
4.根据权利要求1所述的一种具有超晶格结构氮化镓基紫外光电探测器,其特征在于:所述衬底(101)为蓝宝石、硅、氮化镓、氮化铝、碳化硅衬底中的任意一种。
5.根据权利要求1所述的一种具有超晶格结构氮化镓基紫外光电探测器,其特征在于:所述缓冲层(102)厚度为200~1000nm,所述n型GaN层(103)厚度为400~1000nm,所述非掺杂i型NiO/GaN超晶格吸收层(104)厚度为100~200nm,所述p型GaN层(105)厚度为20~100nm,所述p型MgNiO层(106)厚度为100~400nm。
6.根据权利要求1所述的一种具有超晶格结构氮化镓基紫外光电探测器,其特征在于:所述p型MgNiO层(106)空穴浓度介于1016~1018cm-3之间。
7.一种关于权利要求1所述的一种具有超晶格结构氮化镓基紫外光电探测器的制备方法,其工艺步骤如下:
(1)在衬底(101)上生长一层缓冲层(102);
(2)在缓冲层(102)上生长一层n型GaN层(103);
(3)在n型GaN层(103)上生长一层非掺杂i型NiO/GaN超晶格吸收层(104);
(4)在非掺杂i型NiO/GaN超晶格吸收层(104)上生长一层p型GaN层(105);
(5)在p型GaN层(105)上生长一层p型MgNiO层(106);
(6)在p型MgNiO层(106)上进行台面刻蚀,露出n型GaN层(103);
(7)在p型MgNiO层(106)上蒸镀p型Ni/Au欧姆电极(107),并且对电极进行退火处理;
(8)在n型GaN层(103)台面上蒸镀n型Ti/Al/Ti/Au欧姆电极(108),并且对电极进行退火处理。
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