CN105789364B - 一种无铝型ii类超晶格长波双势垒红外探测器 - Google Patents
一种无铝型ii类超晶格长波双势垒红外探测器 Download PDFInfo
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- CN105789364B CN105789364B CN201610351898.6A CN201610351898A CN105789364B CN 105789364 B CN105789364 B CN 105789364B CN 201610351898 A CN201610351898 A CN 201610351898A CN 105789364 B CN105789364 B CN 105789364B
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- 238000005036 potential barrier Methods 0.000 title claims abstract description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 13
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 13
- 239000004411 aluminium Substances 0.000 title claims abstract description 13
- 229910005542 GaSb Inorganic materials 0.000 claims abstract description 41
- 230000004888 barrier function Effects 0.000 claims abstract description 24
- 238000010521 absorption reaction Methods 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 6
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 37
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 36
- 230000005611 electricity Effects 0.000 claims description 2
- 239000000523 sample Substances 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 5
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910017115 AlSb Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
- H01L31/035263—Doping superlattices, e.g. nipi superlattices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor
Abstract
Description
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CN201610351898.6A CN105789364B (zh) | 2016-05-25 | 2016-05-25 | 一种无铝型ii类超晶格长波双势垒红外探测器 |
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CN201610351898.6A CN105789364B (zh) | 2016-05-25 | 2016-05-25 | 一种无铝型ii类超晶格长波双势垒红外探测器 |
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CN105789364A CN105789364A (zh) | 2016-07-20 |
CN105789364B true CN105789364B (zh) | 2018-07-06 |
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Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109148638B (zh) * | 2017-06-28 | 2020-03-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | 红外探测器及其制备方法 |
CN109216485B (zh) * | 2017-06-29 | 2020-11-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | 红外探测器及其制备方法 |
CN108417663B (zh) * | 2018-04-10 | 2023-11-07 | 中国科学院上海技术物理研究所 | 一种用来测量超晶格材料少子横向扩散长度的器件结构 |
CN108417661B (zh) * | 2018-04-18 | 2023-09-12 | 中国科学院上海技术物理研究所 | 一种基于带间级联结构的长波超晶格红外探测器 |
CN110896113B (zh) * | 2018-09-12 | 2021-11-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | 红外光探测器及其制作方法 |
CN111129187B (zh) * | 2018-10-30 | 2022-11-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | 红外光探测器及其制作方法 |
CN112701171B (zh) * | 2019-10-23 | 2022-08-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | 红外探测器及其制作方法 |
CN112582880A (zh) * | 2020-12-11 | 2021-03-30 | 睿创微纳(无锡)技术有限公司 | 一种红外探测器 |
CN113035992A (zh) * | 2021-02-26 | 2021-06-25 | 中国科学院半导体研究所 | 互补势垒超晶格长波红外探测器 |
CN114664960A (zh) * | 2022-05-26 | 2022-06-24 | 苏州焜原光电有限公司 | 一种无应力层的二类超晶格红外探测器及制备方法 |
CN116705882A (zh) * | 2023-08-08 | 2023-09-05 | 中科爱毕赛思(常州)光电科技有限公司 | 一种低缺陷超晶格红外探测器外延材料结构及制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102569521A (zh) * | 2012-02-02 | 2012-07-11 | 中国科学院半导体研究所 | 钝化InAs/GaSb二类超晶格红外探测器制作方法 |
CN102569484A (zh) * | 2012-02-08 | 2012-07-11 | 中国科学院半导体研究所 | InAs/GaSb二类超晶格红外探测器 |
CN103887360A (zh) * | 2014-04-16 | 2014-06-25 | 中国科学院半导体研究所 | InAs/GaSb超晶格红外光电探测器及其制备方法 |
CN104576805A (zh) * | 2015-01-21 | 2015-04-29 | 哈尔滨工业大学 | 一种基于InAs/GaSbⅡ类超晶格材料的短波/中波/长波三色红外探测器 |
US9064992B1 (en) * | 2011-01-18 | 2015-06-23 | Hrl Laboratories, Llc | Method of fabricating dual-band type-II superlattice detectors based on p-B-p design |
-
2016
- 2016-05-25 CN CN201610351898.6A patent/CN105789364B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9064992B1 (en) * | 2011-01-18 | 2015-06-23 | Hrl Laboratories, Llc | Method of fabricating dual-band type-II superlattice detectors based on p-B-p design |
CN102569521A (zh) * | 2012-02-02 | 2012-07-11 | 中国科学院半导体研究所 | 钝化InAs/GaSb二类超晶格红外探测器制作方法 |
CN102569484A (zh) * | 2012-02-08 | 2012-07-11 | 中国科学院半导体研究所 | InAs/GaSb二类超晶格红外探测器 |
CN103887360A (zh) * | 2014-04-16 | 2014-06-25 | 中国科学院半导体研究所 | InAs/GaSb超晶格红外光电探测器及其制备方法 |
CN104576805A (zh) * | 2015-01-21 | 2015-04-29 | 哈尔滨工业大学 | 一种基于InAs/GaSbⅡ类超晶格材料的短波/中波/长波三色红外探测器 |
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Effective date of registration: 20210621 Address after: 23 Huashan Middle Road, Xinbei District, Changzhou City, Jiangsu Province 213000 Patentee after: Zhongke aibisaisi (Changzhou) Photoelectric Technology Co.,Ltd. Address before: 213022 No.23, middle Huashan Road, Xinbei District, Changzhou City, Jiangsu Province Patentee before: Changzhou Zhongke Decai Technology Development Co.,Ltd. |
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