CN112701171B - 红外探测器及其制作方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 229910000673 Indium arsenide Inorganic materials 0.000 claims abstract description 77
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical group [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims abstract description 77
- 230000004888 barrier function Effects 0.000 claims abstract description 67
- 238000010521 absorption reaction Methods 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 229910005542 GaSb Inorganic materials 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 30
- 230000008569 process Effects 0.000 claims description 22
- 239000006096 absorbing agent Substances 0.000 claims description 9
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 18
- 238000012545 processing Methods 0.000 abstract description 7
- 230000000903 blocking effect Effects 0.000 abstract description 3
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910017115 AlSb Inorganic materials 0.000 description 1
- 101100208382 Danio rerio tmsb gene Proteins 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
本发明公开了红外探测器及其制作方法,所述红外探测器包括衬底、P型超晶格接触层、P型超晶格吸收层、空穴势垒层、N型超晶格接触层、第一电极以及第二电极,所述P型超晶格接触层、P型超晶格吸收层、空穴势垒层以及N型超晶格接触层从下而上叠层设置在衬底上,所述第一电极设置在P型超晶格接触层上,所述第二电极设置在N型超晶格接触层上。其中,所述空穴势垒层为InAs/InPSb超晶格。由此,本发明凭借InAs/InPSb超晶格势垒层完美实现了以无Al结构对空穴的阻挡,有效抑制暗电流的同时,降低了材料生长和加工的难度、提升了器件的稳定性和可靠性。而且,InAs/InPSb超晶格可作为短波、中波和长波红外探测器的空穴势垒层,适用于各类波长的红外探测器,泛用性较强。
Description
技术领域
本发明涉及半导体的技术领域,尤其是涉及红外探测器及其制作方法。
背景技术
红外辐射探测是红外技术的重要组成部分,广泛应用于热成像、卫星遥感、气体监测、光通讯以及光谱分析等领域。锑化物超晶格(InAs/GaSb和InAs/InAsSb)红外探测器由于具有均匀性好、俄歇复合率低、波长调节范围大等特点被认为是制备第三代红外探测器最理想的选择之一。相对于碲镉汞红外探测器(HgCdTe),它的均匀性重复性更好、成本更低、在甚长波段性能更好;相对于量子阱红外探测器(QWIP),它的量子效率更高、暗电流更小、工艺更简单。
红外探测器的重要噪声来源是暗电流。目前,为了抑制暗电流,在锑化物超晶格探测器的结构设计上,通常利用能带工程在器件中引入势垒层,比如美国西北大学的M结构(B.-M.Nguyen et al,Appl.Phys.Lett.91,163511,2007),海军实验室的W结构(I.Vurgaftman et al,Appl.Phys.Lett.89,121114,2006),喷气推进实验室的电子空穴互补型势垒(David Z.-Y.Ting et al,Appl.Phys.Lett.95,023508,2009)等。但是,这些现有技术的方案在势垒层的选择上都无一例外的使用含铝(Al)的材料如AlSb或AlAsSb,而由于Al极易氧化,在势垒层中使用含Al的材料会增加红外探测器的生长和加工难度,影响器件的稳定性和可靠性。另有,如果直接采用常规的InAs/GaSb超晶格作为无Al结构异质结,由于无法与吸收层的能带宽度形成较大的差距,从能带工程角度其极难实现空穴的阻挡或者说其阻挡效果较差。
因此,有必要提供一种新的锑化物超晶格红外探测器,能够采用无Al的新型超晶格作为空穴势垒层,降低材料生长和加工的难度,提升器件稳定性和可靠性。
发明内容
有鉴于此,为了解决上述问题,本发明采用了如下的技术方案:
本发明提供了一种红外探测器,所述红外探测器包括衬底、P型超晶格接触层、P型超晶格吸收层、空穴势垒层、N型超晶格接触层、第一电极以及第二电极,所述P型超晶格接触层、P型超晶格吸收层、空穴势垒层以及N型超晶格接触层从下而上叠层设置在所述衬底上,所述第一电极设置在所述P型超晶格接触层上,所述第二电极设置在所述N型超晶格接触层上,
其中,所述空穴势垒层为InAs/InPSb超晶格。
优选地,所述P型超晶格接触层为P型InAs/GaSb超晶格或P型InAs/InAsSb超晶格,所述P型超晶格吸收层为P型InAs/GaSb超晶格或P型InAs/InAsSb超晶格,所述N型超晶格接触层为N型InAs/InPSb超晶格或N型InAs/GaSb超晶格。
优选地,所述空穴势垒层的有效带宽大于所述P型超晶格吸收层的有效带宽,且所述空穴势垒层的导带与所述P型超晶格吸收层的导带平齐。
优选地,所述衬底为P型InAs衬底或P型GaSb衬底。
本发明提供了一种红外探测器的制作方法,包括:提供一衬底;在所述衬底上从下而上地依次生长形成P型超晶格接触层、P型超晶格吸收层、空穴势垒层以及N型超晶格接触层,其中,所述空穴势垒层为InAs/InPSb超晶格;对所述N型超晶格接触层、所述空穴势垒层、所述P型超晶格吸收层进行局部刻蚀,形成露出了所述P型超晶格接触层的台面结构;在所述P型超晶格接触层上沉积第一电极,并在所述N型超晶格接触层上沉积第二电极。
优选地,所述P型超晶格接触层为P型InAs/GaSb超晶格或P型InAs/InAsSb超晶格,所述P型超晶格吸收层为P型InAs/GaSb超晶格或P型InAs/InAsSb超晶格,所述N型超晶格接触层为N型InAs/InPSb超晶格或N型InAs/GaSb超晶格。
优选地,所述空穴势垒层的有效带宽大于所述P型超晶格吸收层的有效带宽,且所述空穴势垒层的导带与所述P型超晶格吸收层的导带平齐。
优选地,所述衬底为P型InAs衬底或P型GaSb衬底。
优选地,采用金属有机物化学气相沉积或分子束外延工艺在所述衬底上从下而上地依次生长形成所述P型超晶格接触层、所述P型超晶格吸收层、所述空穴势垒层以及所述N型超晶格接触层。
与现有技术相比,本发明的有益效果为:
(1)本发明采用全新的无Al材料InAs/InPSb超晶格作为空穴势垒层,该材料的价带位置与InAs平齐,而导带位置可以通过InAs和InPSb材料的厚度灵活调节,因此可以作为InAs/GaSb超晶格以及InAs/InAsSb超晶格的空穴势垒。
(2)本发明提出的探测器结构完全不含Al,降低了材料生长和加工的难度、提升了稳定性和可靠性。
(3)本发明提出的InAs/InPSb超晶格可作为短波、中波和长波红外探测器的空穴势垒层,因此本发明中的红外探测器结构可适用于短波、中波和长波红外探测器,泛用性强。
附图说明
图1是本发明提供的红外探测器的结构示意图;
图2是所述红外探测器的能带示意图;
图3是所述红外探测器中对应P型超晶格吸收层和InAs/InPSb超晶格势垒层各自的导带EC和价带EV相对位置比对图;
图4a~图4d分别对应本发明提供的红外探测器的制作方法的流程图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚,下面结合附图对本发明的具体实施方式进行详细说明。这些优选实施方式的示例在附图中进行了例示。附图中所示和根据附图描述的本发明的实施方式仅仅是示例性的,并且本发明并不限于这些实施方式。
在此,还需要说明的是,为了避免因不必要的细节而模糊了本发明,在附图中仅仅示出了与根据本发明的方案密切相关的结构和/或处理步骤,而省略了关系不大的其他细节。
参阅图1所示,本发明实施例提供了一种红外探测器,所述红外探测器包括衬底10、P型超晶格接触层11、P型超晶格吸收层12、空穴势垒层13、N型超晶格接触层14、第一电极15以及第二电极16,所述P型超晶格接触层11、P型超晶格吸收层12、空穴势垒层13以及N型超晶格接触层14从下而上叠层设置在所述衬底10上,所述第一电极15设置在所述P型超晶格接触层11上,所述第二电极16设置在所述N型超晶格接触层14上。
结合图2所示出的所述红外探测器的能带示意图,所述空穴势垒层13的有效带宽大于所述P型超晶格吸收层12的有效带宽,且所述空穴势垒层13的导带与所述P型超晶格吸收层12的导带平齐。由此,在所述红外探测器进行工作时,通过所述空穴势垒层13和所述P型超晶格吸收层12形成的异质结,对于在所述P型超晶格吸收层12处产生的光电流,空穴被所述P型超晶格接触层11所收集,而电子则通过所述空穴势垒层13后由所述N型超晶格接触层14所收集,所述空穴势垒层13阻挡空穴通过,使得暗电流受到抑制,从而确保了红外探测器的探测性能,提高器件的工作温度而乃至可以无需低温条件来正常工作。
其中,本发明的核心技术改进点在于,上述空穴势垒层13为InAs/InPSb超晶格势垒层。以所述P型超晶格吸收层12采用P型InAs/GaSb超晶格吸收层为例,参照图3中对应P型InAs/GaSb超晶格吸收层12和所述InAs/InPSb超晶格空穴势垒层13各自的导带EC和价带EV相对位置比对图所示,本发明可以灵活地控制InAs材料和InPSb材料的厚度可将InAs/GaSb超晶格的导带和InAs/InPSb超晶格的导带EC调节至平齐,而由于InPSb材料的特点是价带EV位置较低、带宽较大,所述InAs/InPSb超晶格的价带EV远低于InAs/GaSb超晶格的价带EV,从而实现了相对于所述P型超晶格吸收层12的完美空穴势垒。InAs/InPSb超晶格完全不含Al元素,相比于现有技术的方案,其能降低材料生长和加工的难度、提升了红外探测器生产的稳定性和可靠性。另外,InAs/InPSb超晶格可作为对应短波红外材料、中波红外材料以及长波红外材料的空穴势垒层,因此,基于InAs/InPSb超晶格的空穴势垒层13制成的红外探测器可适用于作为短波、中波和长波红外探测器,使得本发明的红外探测器的泛用性较高。
以下以具体的实施例进一步说明本发明:
实施例1
本发明提供的红外探测器中,示例性地,所述衬底10为P型InAs衬底或P型GaSb衬底,所述P型超晶格接触层11为P型InAs/GaSb超晶格或P型InAs/InAsSb超晶格,所述P型超晶格吸收层12为P型InAs/GaSb超晶格或P型InAs/InAsSb超晶格,所述空穴势垒层13为InAs/InPSb超晶格,所述N型超晶格接触层14为N型InAs/InPSb超晶格或N型InAs/GaSb超晶格。
更具体地,作为各层的示例,所述P型超晶格接触层11的厚度为0.2μm~0.5μm,掺杂源选用Zn或Be,掺杂浓度为1×1018cm-3~2×1018cm-3,对应带宽为0.1eV~0.3eV;
所述P型超晶格吸收层12的厚度为2μm~5μm,掺杂源选用Zn或Be,掺杂浓度为2×1015cm-3~5×1016cm-3,对应带宽为0.1eV~0.3eV;
所述空穴势垒层13的厚度为0.2μm~0.5μm,为非故意掺杂,对应带宽为0.4eV~0.6eV;
所述N型超晶格接触层14的厚度为0.2μm~0.5μm,掺杂源选用Si,掺杂浓度为1×1018cm-3~2×1018cm-3,对应带宽为0.3eV~0.6eV。
实施例2
如图4所示,本发明提供了一种上述红外探测器的制作方法,所述制作方法包括:
步骤S1、对应图4a所示,提供一衬底10;
在本实施例中,所述衬底10选用P型InAs衬底。
步骤S2、对应图4b所示,在所述衬底10上从下而上地依次生长形成P型超晶格接触层11、P型超晶格吸收层12、空穴势垒层13以及N型超晶格接触层14,其中,所述空穴势垒层13为InAs/InPSb超晶格;
在本实施例中,采用金属有机物化学气相沉积(MOCVD)工艺在所述衬底10上从下而上地依次生长形成P型超晶格接触层11、P型超晶格吸收层12、空穴势垒层13以及N型超晶格接触层14。具体地,以金属有机物化学气相沉积工艺作为生长工艺,生长源为TMGa、TMIn、TMSb、AsH3以及PH3,n型掺杂源为SiH4,p型掺杂源为DEZn,生长温度设置为约600℃,反应室压力设置为200Torr。在高温处理除去步骤S1中衬底10表面的杂质后,从下而上在衬底10上依次生长:
(1)P型超晶格接触层11,P型超晶格接触层11为P型InAs/GaSb超晶格,厚度为0.2μm,掺Zn,掺杂浓度为2×1018cm-3,对应带宽为0.3eV;
(2)P型超晶格吸收层12,P型超晶格吸收层12为P型InAs/GaSb超晶格,厚度为2μm,掺Zn,掺杂浓度为5×1016cm-3,对应带宽为0.3eV;
(3)空穴势垒层13,空穴势垒层13为InAs/InPSb超晶格,厚度为0.2μm,非故意掺杂,对应带宽为0.6eV,其导带与P型超晶格吸收层12的导带平齐;
(4)N型超晶格接触层14,N型超晶格接触层14的材料为N型InAs/GaSb超晶格,厚度为0.2μm,掺Si,掺杂浓度为2×1018cm-3,对应带宽为0.3eV。
步骤S3、对应图4c所示,对所述N型超晶格接触层14、所述空穴势垒层13、所述P型超晶格吸收层12进行局部刻蚀,形成露出了所述P型超晶格接触层11的台面结构A;
具体地,采用感应耦合等离子体刻蚀(ICP)工艺对N型超晶格接触层14、空穴势垒层13以及P型超晶格吸收层12进行局部刻蚀,使P型超晶格接触层11露出,从而形成台面结构A。
步骤S4、对应图4d所示,在所述P型超晶格接触层11上沉积第一电极15,并在所述N型超晶格接触层14上沉积第二电极16。
本实施例中采用了MOCVD工艺作为P型超晶格接触层11、P型超晶格吸收层12、空穴势垒层13以及N型超晶格接触层14的生长工艺,能够减小成本,提高制出的红外探测器的性价比,以上述具体工艺及参数获得的P型超晶格吸收层12的截至波长约为4.1μm,属于中波红外,整体工艺流程比较适合制作中波焦平面探测器阵列。
实施例3
本实施例提供了另一种红外探测器的制作方法,其包括的基本步骤与实施例2中的步骤S1~S4一致,主要所不同的是,本实施例采用分子束外延工艺(MBE)在所述衬底10上从下而上地依次生长形成P型超晶格接触层11、P型超晶格吸收层12、空穴势垒层13以及N型超晶格接触层14。
所述步骤S1中,具体地,提供一材质为P型GaSb的P型衬底10。
所述步骤S2中,使用分子束外延工艺作为生长工艺,生长源为固态单质源Ga、In、As、P以及Sb,n型掺杂源为Si,p型掺杂源为Be,生长温度约为400℃。在衬底10经过除气去杂后,从下而上在衬底10上依次生长:
(1)P型超晶格接触层11,P型超晶格接触层11为P型InAs/InAsSb超晶格,厚度为0.5μm,掺Be,掺杂浓度为1×1018cm-3,对应带宽为0.1eV;
(2)P型超晶格吸收层12,P型超晶格吸收层12为P型InAs/InAsSb超晶格,厚度为5μm,掺Be,掺杂浓度为2×1015cm-3,对应带宽为0.1eV;
(3)空穴势垒层13,空穴势垒层13为InAs/InPSb超晶格,厚度为0.5μm,非故意掺杂,对应带宽为0.4eV,其导带与P型超晶格吸收层12的导带平齐;
(4)N型超晶格接触层14,N型超晶格接触层14的材料为N型InAs/InPSb超晶格,厚度为0.5μm,掺Si,掺杂浓度为1×1018cm-3,对应带宽为0.4eV。
所述步骤S3中,采用湿法腐蚀工艺对N型超晶格接触层14、空穴势垒层13、P型超晶格吸收层12进行局部刻蚀,使P型超晶格接触层11露出,形成台面结构A。
本实施例采用MBE工艺作为生长工艺,以上述具体工艺及参数获得的P型超晶格吸收层12的截至波长约为12μm,属于长波红外。由于MBE工艺能形成陡峭界面,得到的长波红外探测器的性能较高。
综上所述,本发明实施例提供的红外探测器,采用InAs/InPSb超晶格作为空穴势垒层,以无Al的结构完美实现了空穴阻挡以抑制暗电流,能够降低材料生长和加工的难度,提高制得的红外探测器的稳定性和可靠性,而且利用InAs/InPSb超晶格,能够适用于短波、中波和长波红外探测器,泛用性强。
需要说明的是,在本文中,术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含,从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素,而且还包括没有明确列出的其他要素,或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下,由语句“包括一个……”限定的要素,并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。
以上所述仅是本申请的具体实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本申请原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本申请的保护范围。
Claims (5)
1.一种红外探测器,其特征在于,包括衬底(10)、P型超晶格接触层(11)、P型超晶格吸收层(12)、空穴势垒层(13)、N型超晶格接触层(14)、第一电极(15)以及第二电极(16),所述P型超晶格接触层(11)、P型超晶格吸收层(12)、空穴势垒层(13)以及N型超晶格接触层(14)从下而上叠层设置在所述衬底(10)上,所述第一电极(15)设置在所述P型超晶格接触层(11)上,所述第二电极(16)设置在所述N型超晶格接触层(14)上,
其中,所述P型超晶格接触层(11)为P型InAs/GaSb超晶格或P型InAs/InAsSb超晶格,所述P型超晶格吸收层(12)为P型InAs/GaSb超晶格或P型InAs/InAsSb超晶格,所述N型超晶格接触层(14)为N型InAs/InPSb超晶格或N型InAs/GaSb超晶格;
其中,所述空穴势垒层(13)为InAs/InPSb超晶格,所述空穴势垒层(13)的有效带宽大于所述P型超晶格吸收层(12)的有效带宽,且所述空穴势垒层(13)的导带与所述P型超晶格吸收层(12)的导带平齐,且所述空穴势垒层(13)的价带低于所述P型超晶格吸收层(12)的价带。
2.根据权利要求1所述的红外探测器,其特征在于,所述衬底(10)为P型InAs衬底或P型GaSb衬底。
3.一种红外探测器的制作方法,其特征在于,包括:
提供一衬底(10);
在所述衬底(10)上从下而上地依次生长形成P型超晶格接触层(11)、P型超晶格吸收层(12)、空穴势垒层(13)以及N型超晶格接触层(14),其中,所述空穴势垒层(13)为InAs/InPSb超晶格;
对所述N型超晶格接触层(14)、所述空穴势垒层(13)、所述P型超晶格吸收层(12)进行局部刻蚀,形成露出了所述P型超晶格接触层(11)的台面结构(A);
在所述P型超晶格接触层(11)上沉积第一电极(15),并在所述N型超晶格接触层(14)上沉积第二电极(16);
其中,所述P型超晶格接触层(11)为P型InAs/GaSb超晶格或P型InAs/InAsSb超晶格,所述P型超晶格吸收层 (12)为P型InAs/GaSb超晶格或P型InAs/InAsSb超晶格,所述N型超晶格接触层(14)为N型InAs/InPSb超晶格或N型InAs/GaSb超晶格;
其中,所述空穴势垒层(13)的有效带宽大于所述P型超晶格吸收层(12)的有效带宽,且所述空穴势垒层(13)的导带与所述P型超晶格吸收层(12)的导带平齐,且所述空穴势垒层(13)的价带低于所述P型超晶格吸收层(12)的价带。
4.根据权利要求3所述的红外探测器的制作方法,其特征在于,所述衬底(10)为P型InAs衬底或P型GaSb衬底。
5.根据权利要求3所述的红外探测器的制作方法,其特征在于,采用金属有机物化学气相沉积或分子束外延工艺在所述衬底(10)上从下而上地依次生长形成所述P型超晶格接触层(11)、所述P型超晶格吸收层(12)、所述空穴势垒层(13)以及所述N型超晶格接触层(14)。
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