CN111106203B - 红外探测器及其制作方法 - Google Patents
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Abstract
本发明公开了一种红外探测器的制作方法，该制作方法包括：在N型衬底上形成探测器台面，探测器台面包括依序层叠形成在N型衬底上的N型InAsP/InAsSb超晶格吸收层、InPSb势垒层和N型InAsP/InAsSb超晶格接触层；在探测器台面的N型InAsP/InAsSb超晶格接触层上形成第一电极，且在N型衬底上形成与探测器台面对应的第二电极。本发明还公开了由上述制作方法制作的红外探测器。本发明解决了在红外探测器的制作过程中，难以形成异质结结构的问题。
Description
技术领域
本发明涉及半导体领域，尤其涉及一种红外探测器及其制作方法。
背景技术
红外辐射探测是红外技术的重要组成部分，广泛应用于热成像、卫星遥感、气体监测、光通讯、光谱分析等领域。锑化物二类超晶格红外探测器由于具有均匀性好、俄歇复合率低、波长调节范围大等特点被认为是制备第三代红外探测器最理想的选择之一。相对于碲镉汞红外探测器(HgCdTe)，它的均匀性重复性更好、成本更低、在长波甚长波段性能更好；相对于量子阱红外探测器(QWIP)，它的量子效率更高、暗电流更小、工艺更简单。
目前锑化物超晶格材料分为两种体系，一种是常规的InAs/GaSb超晶格，一种是无Ga的InAs/InAsSb超晶格。通常认为InAs/GaSb超晶格在长波波段(8μm-12μm)性能最佳而InAs/InAsSb超晶格在中波波段(3μm-5μm)性能最佳。对于中波无Ga的InAs/InAsSb超晶格探测器，最常见的结构是PIN同质结，但器件性能低于采用异质结的器件。目前文献报道的能够与中波无Ga的InAs/InAsSb超晶格构成异质结构的材料只有AlAsSb(铝砷锑)。但是含Al的材料容易在生长和加工过程中氧化，降低了器件的性能和可靠性。另外AlAsSb只适合分子束外延(MBE)生长，而另外一种在工业界具有统治地位的材料生长方式金属有机物化学气相沉积(MOCVD)，却极难制备出高品质的含Al锑化物。这限制了中波InAs/InAsSb超晶格探测器的产业化。
因此，有必要研发一种新的异质结红外探测器的制作方法，能够兼容MBE和MOCVD两种生长方法，来简化InAs/InAsSb异质结红外探测器的制作流程，减少制作难度。
发明内容
为了达到上述的目的，本发明提供了一种红外探测器的制作方法，所述制作方法包括：
在N型衬底上形成探测器台面，所述探测器台面包括依序层叠形成在所述N型衬底上的N型InAsP/InAsSb超晶格吸收层、InPSb势垒层和N型InAsP/InAsSb超晶格接触层；
在所述探测器台面的N型InAsP/InAsSb超晶格接触层上形成第一电极，且在所述N型衬底上形成与所述探测器台面对应的第二电极。
优选地，在N型衬底上形成探测器台面的方法包括：
在N型衬底上依序形成层叠的第一N型InAsP/InAsSb超晶格层、InPSb层、第二N型InAsP/InAsSb超晶格层；
对所述第一N型InAsP/InAsSb超晶格层、所述InPSb层和所述第二N型InAsP/InAsSb超晶格层进行刻蚀处理以暴露所述N型衬底，从而形成所述探测器台面。
优选地，利用金属有机物化学气相沉积法在N型衬底上依序形成层叠的第一N型InAsP/InAsSb超晶格层、InPSb层、第二N型InAsP/InAsSb超晶格层。
优选地，采用感应耦合等离子刻蚀工艺对所述第一N型InAsP/InAsSb超晶格层、所述InPSb层和所述第二N型InAsP/InAsSb超晶格层进行刻蚀处理。
优选地，所述N型InAsP/InAsSb超晶格吸收层的带宽为0.25eV，其截止波长在5μm附近。
优选地，利用分子束外延沉积法在N型衬底上依序形成层叠的第一N型InAsP/InAsSb超晶格层、InPSb层、第二N型InAsP/InAsSb超晶格层。
优选地，采用湿法腐蚀工艺对所述第一N型InAsP/InAsSb超晶格层、所述InPSb层和所述第二N型InAsP/InAsSb超晶格层进行刻蚀处理。
优选地，所述N型InAsP/InAsSb超晶格吸收层的带宽为0.12eV，其截止波长在10μm附近。
优选地，所述InPSb势垒层的有效带宽大于所述N型InAsP/InAsSb超晶格吸收层的有效带宽，且大于所述N型InAsP/InAsSb超晶格接触层的有效带宽。
本发明还提供了一种由上述制作方法制作而成的红外探测器。
与现有技术相比，本发明的有益效果为：
(1)本发明采用了无Ga的InAsP/InAsSb超晶格作为吸收层，相比于InAs/InAsSb超晶格，增加P元素后能够提高红外光吸收系数、增加探测器的量子效率和器件设计的灵活性。
(2)本发明采用了无Al的InPSb势垒层，同时适合金属有机物化学气相沉积和分子束外延两种生长方法，并且避免了器件生长和加工过程的氧化问题，减小了异质结结构的形成难度。
(3)常规的InAs/InAsSb超晶格只能在GaSb衬底上做晶格匹配，本发明的红外探测器采用的InAsP/InAsSb超晶格吸收层可在N型InAs衬底和N型GaSb衬底上实现晶格匹配，增加了N型衬底的选择性。
(4)InAsP/InAsSb可形成多种能带结构，增加了材料设计和器件设计的可能性。
附图说明
图1至图3为本发明的工艺示意图；
图4为本发明红外探测器的各功能层的能带结构示意图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚，下面结合附图对本发明的具体实施方式进行详细说明。这些优选实施方式的示例在附图中进行了例示。附图中所示和根据附图描述的本发明的实施方式仅仅是示例性的，并且本发明并不限于这些实施方式。
在此，还需要说明的是，为了避免因不必要的细节而模糊了本发明，在附图中仅仅示出了与根据本发明的方案密切相关的结构和/或处理步骤，而省略了与本发明关系不大的其他细节。
作为本发明红外探测器的一种实施方法，该方法包括：
步骤S1、在N型衬底1(优选为N型InAs衬底，掺杂浓度为1×1019cm-3)上形成探测器台面，所述探测器台面包括依序层叠形成在所述N型衬底1上的N型InAsP/InAsSb超晶格吸收层2、InPSb势垒层3和N型InAsP/InAsSb超晶格接触层4。
具体地，如图1所示，本步骤中对N型衬底1进行高温处理去除表面杂质后，利用金属有机物化学气相沉积法(MOCVD)在所述N型衬底1上依序形成层叠的第一N型InAsP/InAsSb超晶格层a、InPSb层b、第二N型InAsP/InAsSb超晶格层c。其中，生长源为TMIn、TMSb、AsH3和PH3，N型掺杂源为SiH4，生长温度为600℃，反应室压力为200Torr。其中，所述InPSb层b不进行掺杂，其厚度为0.25μm，带宽为0.73eV；所述第一N型InAsP/InAsSb超晶格层a包括2.5μm厚的InAsP/InAsSb超晶格，各层掺Si，掺杂浓度为5×1016cm-3，对应带宽为0.25eV；所述第二N型InAsP/InAsSb超晶格层c包括0.25μm厚的InAsP/InAsSb超晶格，各层掺Si，掺杂浓度为5×1016cm-3，对应带宽为0.25eV。
具体地，如图2所示，本步骤中生长所述第一N型InAsP/InAsSb超晶格层a、InPSb层b、第二N型InAsP/InAsSb超晶格层c后，采用感应耦合等离子刻蚀工艺对所述第一N型InAsP/InAsSb超晶格层a、所述InPSb层b和所述第二N型InAsP/InAsSb超晶格层c进行刻蚀处理，暴露所述N型衬底1，从而形成所述探测器台面。
步骤S2、如图3所示，在所述探测器台面的N型InAsP/InAsSb超晶格接触层4上形成第一电极5，且在所述N型衬底1上形成与所述探测器台面对应的第二电极6。优选地，采用电子束蒸发工艺，把Ti、Pt、Au依序叠层组合形成所述第一电极5和第二电极6，所述Ti的厚度为
所述Pt的厚度为
所述Au的厚度为
本实施例中生长采用了工业化的MOCVD工艺，能够减少红外探测器的生产成本，提高产品性价比。本实施例中，N型InAsP/InAsSb超晶格吸收层2的带宽为0.25eV，对应截至波长约5μm，为中波器件。整体工艺流程比较适合做高性能中波红外焦平面探测器阵列。
作为本发明红外探测器的另一种实施方法，该方法包括：
步骤S1、在N型衬底1(优选为N型GaSb衬底，掺杂浓度为2×1018cm-3)上形成探测器台面，所述探测器台面包括依序层叠形成在所述N型衬底1上的N型InAsP/InAsSb超晶格吸收层2、InPSb势垒层3和N型InAsP/InAsSb超晶格接触层4。
具体地，如图1所示，本步骤中对N型衬底1进行高温处理去除表面杂质后，采用分子束外延工艺(MBE)在所述N型衬底1上依序形成层叠的第一N型InAsP/InAsSb超晶格层a、InPSb层b、第二N型InAsP/InAsSb超晶格层c。其中，生长源为固态单质源In、As、Sb和P，N型掺杂源为Si。生长温度为400℃。其中，所述InPSb层b不进行掺杂，其厚度为0.5μm，带宽为0.64eV；所述第一N型InAsP/InAsSb超晶格层a包括4.0μm厚的InAsP/InAsSb超晶格，各层掺Si，掺杂浓度为2×1016cm-3，对应带宽为0.12eV；所述第二N型InAsP/InAsSb超晶格层c包括0.5μm厚的InAsP/InAsSb超晶格，各层掺Si，掺杂浓度为1×1018cm-3，对应带宽为0.12eV。
具体地，如图2所示，本步骤中生长所述第一N型InAsP/InAsSb超晶格层a、InPSb层b、第二N型InAsP/InAsSb超晶格层c后，采用湿法腐蚀工艺对所述第一N型InAsP/InAsSb超晶格层a、所述InPSb层b和所述第二N型InAsP/InAsSb超晶格层c进行刻蚀处理，暴露所述N型衬底1，从而形成所述探测器台面。
步骤S2、如图3所示，在所述探测器台面的N型InAsP/InAsSb超晶格接触层4上形成第一电极5，且在所述N型衬底1上形成与所述探测器台面对应的第二电极6。优选地，采用电子束蒸发工艺，把Ti、Pt、Au依序叠层组合形成所述第一电极5和第二电极6，所述Ti的厚度为
所述Pt的厚度为
所述Au的厚度为
本实施例中使用较为常见的MBE工艺，N型InAsP/InAsSb超晶格吸收层2的带宽为0.12eV，对应截至波长约10μm，为长波器件。由于MBE工艺能形成陡峭界面，该实施例提供的长波锑化物超晶格探测器性能较高。
此外参阅图4可知，本发明红外探测器的N型InAsP/InAsSb超晶格吸收层2的有效带宽和N型InAsP/InAsSb超晶格接触层4的有效带宽均小于InPSb势垒层3的有效带宽，因此所述InPSb势垒层3能够做为所述N型InAsP/InAsSb超晶格吸收层2和所述N型InAsP/InAsSb超晶格接触层4的电子势垒，即带宽大于两者且价带与之平齐，形成“nBn”型探测器结构。该种结构具有结构简单、制作工艺稳定、重复性强、操作性强等优点。
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型，本发明的范围由所附权利要求及其等同物限定。
Claims (9)
1.一种红外探测器的制作方法，其特征在于，所述制作方法包括：
在N型衬底(1)上形成探测器台面，所述探测器台面包括依序层叠形成在所述N型衬底(1)上的N型InAsP/InAsSb超晶格吸收层(2)、InPSb势垒层(3)和N型InAsP/InAsSb超晶格接触层(4)；
在所述探测器台面的N型InAsP/InAsSb超晶格接触层(4)上形成第一电极(5)，且在所述N型衬底(1)上形成与所述探测器台面对应的第二电极(6)；
所述InPSb势垒层(3)的有效带宽大于所述N型InAsP/InAsSb超晶格吸收层(2)的有效带宽，且大于所述N型InAsP/InAsSb超晶格接触层(4)的有效带宽。
2.根据权利要求1所述的制作方法，其特征在于，在N型衬底(1)上形成所述探测器台面的方法包括：
在N型衬底(1)上依序形成层叠的第一N型InAsP/InAsSb超晶格层(a)、InPSb层(b)、第二N型InAsP/InAsSb超晶格层(c)；
对所述第一N型InAsP/InAsSb超晶格层(a)、所述InPSb层(b)和所述第二N型InAsP/InAsSb超晶格层(c)进行刻蚀处理以暴露所述N型衬底(1)，从而形成所述探测器台面。
3.根据权利要求2所述的制作方法，其特征在于，利用金属有机物化学气相沉积法在N型衬底(1)上依序形成层叠的第一N型InAsP/InAsSb超晶格层(a)、InPSb层(b)、第二N型InAsP/InAsSb超晶格层(c)。
4.根据权利要求3所述的制作方法，其特征在于，采用感应耦合等离子刻蚀工艺对所述第一N型InAsP/InAsSb超晶格层(a)、所述InPSb层(b)和所述第二N型InAsP/InAsSb超晶格层(c)进行刻蚀处理。
5.根据权利要求1至4任一项所述的制作方法，其特征在于，所述N型InAsP/InAsSb超晶格吸收层(2)的带宽为0.25eV，其截止波长在5μm附近。
6.根据权利要求2所述的制作方法，其特征在于，利用分子束外延沉积法在N型衬底(1)上依序形成层叠的第一N型InAsP/InAsSb超晶格层(a)、InPSb层(b)、第二N型InAsP/InAsSb超晶格层(c)。
7.根据权利要求6所述的制作方法，其特征在于，采用湿法腐蚀工艺对所述第一N型InAsP/InAsSb超晶格层(a)、所述InPSb层(b)和所述第二N型InAsP/InAsSb超晶格层(c)进行刻蚀处理。
8.根据权利要求1或2或6或7所述的制作方法，其特征在于，所述N型InAsP/InAsSb超晶格吸收层(2)的带宽为0.12eV，其截止波长在10μm附近。
9.一种由权利要求1至8任一项所述的制作方法制作而成的红外探测器。
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