CN115000212B - 一种二维直接带隙半导体探测器及其制备方法 - Google Patents
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Abstract
本发明提供了一种二维直接带隙半导体探测器,其特征在于,所述二维直接带隙半导体探测器为Ag/In2(PS3)3肖特基光电探测器;所述的探测器的结构为绝缘衬底、在绝缘衬底上制作底电极,底电极上方是通过定点转移的单层二维In2(PS3)3层、在In2(PS3)3的正上方是顶电极。对二维In2(PS3)3层施加压缩应变和拉伸应变分别增加和减小二维In2(PS3)3层的带隙,双轴压缩应变会增大带隙最高可达1.81eV,双轴拉伸应变会减小带隙最小1.3eV,较宽的带隙变化范围能够增大探测光波段的范围。
Description
技术领域
本发明涉及一种二维直接带隙半导体探测器及其制备方法。
背景技术
二维材料由于其独特的层状结构,可调的能带结构,高的载流子迁移率,强的光与材料相互作用,多种低维光电效应,无晶格失配的范德瓦尔斯异质结构等优势被认为是下一代最具有前景的光电材料。
现有的二维半导体光电探测器有着多种多样的器件结构,比如传统的金属/半导体/金属结构的光电导器件,高光增益的光电晶体管结构,P-N结的光电二极管结构以及热效应的光热电器件等多种器件结构,这些形态各异的器件结构对应着多种多样的光电效应,如光电导效应,光生伏打效应,光电门效应,光热电效应等。而这些效应与二维材料的禁带宽度密切相关。因此,寻找和设计具有带隙可调的直接带隙和良好稳定性的二维直接带隙半导体探测器仍然是当今研究的热点.
发明内容
本发明目的在于提供一种二维直接带隙半导体探测器及其制备方法,以解决上述现有技术存在的问题。
本发明所述一种二维直接带隙半导体探测器,其特征在于,所述二维直接带隙半导体探测器为Ag/In2(PS3)3肖特基光电探测器;所述的探测器的结构,如附图1所示:绝缘衬底1、在绝缘衬底1上制作底电极2,底电极2上方是通过定点转移的单层二维In2(PS3)3层3、在In2(PS3)3的正上方是顶电极4。
所述绝缘衬底为云母片或SOI衬底;
所述底电极为银层。
所述顶电极为ITO层或银栅线。
所述的SOI衬底,SiO2氧化层厚度是300nm,电阻率小于0.05Ω·cm;
所述的底电极和顶电极厚度是10-30nm;
所述的In2(PS3)3层的厚度是0.69nm,;
本发明提供了一种二维直接带隙半导体探测器的制备方法步骤如下:
1)利用电子束曝光EBL技术、热蒸镀和剥离等技术在云母片或SOI衬底上沉积银作为底电极;
2)采用空间受限化学气相透射(CVT)方法制备了超薄二维In2(PS3)3层,通过利用空间限制的外延生长方法获得原子级薄的介电In2(PS3)3层。VDW性质导致In2(PS3)3的逐层生长,从而能够实现具有仅0.69nm的有限厚度的单层结构;
3)运用定点转移技术或湿法转移把氟金云母的中间层的In2(PS3)3纳米层转到银底电极的正上方,并暴露出部分银底电极
4)利用电子束曝光EBL技术、磁控溅射在In2(PS3)3层正上方准确定位沉积ITO或银栅线的顶电极,从而制备成具有垂直肖特基结的In2(PS3)3探测器。
与现有技术相比,本发明具有以下优点:
本发明的In2(PS3)3单层具有直接带隙特性,带隙为1.58eV;沿xy双轴在-3%到+3%应变下(-表示压缩应变,+表示拉伸应变),对应In2(PS3)3单层的带隙是变化范围为1.81eV~1.3eV,且均为直接带隙半导体,双轴压缩应变会增大带隙最高可达1.81eV,双轴拉伸应变会减小带隙最小1.3eV。本发明对二维In2(PS3)3层施加压缩应变和拉伸应变分别增加和减小二维In2(PS3)3层的带隙,较宽的带隙变化范围能够增大探测光波段的范围。
附图说明
图1是二维直接带隙半导体探测器的结构示意图。
图2是In2(PS3)3单层在PBE泛函下的能带结构。
图3In2(PS3)3单层在PBE泛函下的投影能带结构。
图4是In2(PS3)3单层沿xy双轴应变在-3%~3%范围内的能带结构.。
图5是沿xy方向施加-3%到3%应变下In2(PS3)3单层带隙值的变化。
图6是沿xy方向施加-3%到3%应变下In2(PS3)3单层的In-In键、In-P键和In-S键的变化。
具体实施方式
下面结合对本发明的具体实施方式作详细说明:
本发明研制了一种二维直接带隙半导体探测器,所述二维直接带隙半导体探测器为Ag/In2(PS3)3肖特基光电探测器;所述的探测器的结构,绝缘衬底1、在绝缘衬底1上制作底电极2,底电极2上方是通过定点转移的单层二维In2(PS3)3层3、在In2(PS3)3层的正上方是顶电极4,并且保证顶电极和底电极没有接触区域。通过对单层二维In2(PS3)3层施加压缩应变和拉伸应变分别增加和减小单层二维In2(PS3)3层的带隙,增大探测光波段的范围。
一种二维直接带隙半导体探测器的制备方法,具体步骤如下:
步骤1,选用云母片或SOI做为衬底,在衬底上利用光刻技术对电极图形进行精准定位曝光显影,利用热蒸发技术制备银电极层,银电极层厚度为10nm;
步骤2,将氟金云母(KMg3(AlSi3O10)F2)片材剥离并重新附着,然后放入真空石英管的一端,将适量铟、磷和硫粉末放到真空石英管的另一端,采用空间受限化学气相透射(CVT)方法制备了超薄二维In2(PS3)3纳米片,在氟金云母的中间层中获得超薄单层2D In2(PS3)3纳米层;真空石英管的密封在压力小于10mbar,以5℃/min的加热速率将整个石英管加热至600℃持续6h;之后,将炉以2℃/min的速率冷却至室温;
步骤3,运用定点转移技术或湿法转移把氟金云母的中间层的In2(PS3)3纳米层转到银底电极的正上方,并暴露出部分银底电极;
步骤4,利用磁控溅射在In2(PS3)3纳米层上生长透明电极ITO,生长时间20min,温度为100度,或者利用电镀技术利用掩膜制备银栅线。
优选地,步骤3具体为:生长有二维In2(PS3)3纳米层的氟金云母基底粘在一个2*2cm的薄玻璃片上,然后将PMMA以3000rad/s的速度旋涂30s覆盖在氟金云母上,然后在135℃的加热台上加热10min,用刀片将氟金云母片与薄玻璃脱离;在培养皿中倒入去离子水,将生长有二维In2(PS3)3纳米层的氟金云母片浸泡40min,取出后放置在去离子水表面,用镊子上下按压氟金云母片,利用水的表面张力让携带纳米层的PMMA与氟金云母片基底脱离;在步骤2制备的银电极层上设置掩膜板,利用掩膜板遮挡部分底电极后,利用设置了掩膜板的云母片把PMMA从去离子水中捞起,用滤纸吸干水分,在加热台上以150℃加热30min,然后取下等待自然降温;将制备了底电极且部分覆盖了掩膜板的云母片放入丙酮中,静泡30min后,放在加热台上以60℃的温度加热30min,然后等待自然降温后,去掉掩膜板,将云母片放入IPA溶液中,然后取出用洗耳球吹干。
本实施例制备的单层二维In2(PS3)3单层具有直接带隙特性,能带结构和投影能带结构如图2和图3所示,结果显示In2(PS3)3单层的导带底(CBM)和价带顶(VBM)都位于布里渊区的Γ点处,这表明它是一个具有能隙为1.57eV的直接带隙半导体材料.并且它的价带顶和导带底主要都是由S原子的p轨道贡献。在In2(PS3)3单层上分别沿xy方向的双轴、施加0%到3%的压缩和拉伸应变,即施加-3%到3%应变(-表示压缩应变,+表示拉伸应变),从计算得出的能带结构(图4)上看,In2(PS3)3单层在沿xy双轴在-3%到+3%应变下,对应In2(PS3)3单层的带隙是变化范围为1.81eV~1.3eV,如图5所示。从图6中可以看出施加双轴应变下In-In键长、In-P键长及In-S键长的变化趋势是相同的,压缩应变时会导致键长缩短,拉伸应变时会导致键长增加。双轴应变下压缩应变会增大带隙,拉伸应变会减小带隙.这表明应用简单的外部应变可以灵活地调节带隙.这一特性使本实施例制备的一种二维直接带隙半导体探测器应用变得更为广泛。
对于本领域的技术人员来说,可根据以上描述的技术方案以及构思,做出其它各种相应的改变以及形变,而所有的这些改变以及形变都应该属于本发明权利要求的保护范围之内。
Claims (10)
1.一种二维直接带隙半导体探测器,其特征在于,所述二维直接带隙半导体探测器为Ag/In2(PS3)3肖特基光电探测器,所述的探测器的结构为绝缘衬底、在绝缘衬底上制作底电极,底电极上方是通过定点转移的单层二维In2(PS3)3层、在In2(PS3)3的正上方是顶电极。
2.根据权利要求1所述的一种二维直接带隙半导体探测器,其特征在于,所述绝缘衬底为云母片或SOI衬底。
3.根据权利要求1所述的一种二维直接带隙半导体探测器,其特征在于,所述底电极为银层。
4.根据权利要求1所述的一种二维直接带隙半导体探测器,其特征在于,所述顶电极为ITO层或银栅线。
5.根据权利要求1所述的一种二维直接带隙半导体探测器,其特征在于,所述In2(PS3)3层的厚度是0.69nm。
6.一种二维直接带隙半导体探测器的制备方法,包含以下步骤,
1)利用电子束曝光EBL技术、热蒸镀和剥离技术在云母片或SOI衬底上沉积银作为底电极;
2)采用空间受限化学气相透射(CVT)方法制备了超薄二维In2(PS3)3层,通过利用空间限制的外延生长方法获得原子级薄的介电In2(PS3)3层;VDW性质导致In2(PS3)3的逐层生长,从而能够实现具有仅0.69nm的有限厚度的单层结构;
3)运用定点转移技术或湿法转移把氟金云母的中间层的In2(PS3)3纳米层转到银底电极的正上方,并暴露出部分银底电极;
4)利用电子束曝光EBL技术、磁控溅射在In2(PS3)3层正上方准确定位沉积ITO或银栅线的顶电极,从而制备成具有垂直肖特基结的In2(PS3)3探测器。
7.根据权利要求6所述的一种二维直接带隙半导体探测器的制备方法,其特征在于,步骤1)具体为,选用云母片或SOI做为衬底,在衬底上利用光刻技术对电极图形进行精准定位曝光显影,利用热蒸发技术制备银电极层,银电极层厚度为10nm。
8.根据权利要求6所述的一种二维直接带隙半导体探测器的制备方法,其特征在于,步骤2)具体为,将氟金云母片材剥离并重新附着,然后放入真空石英管的一端,将适量铟、磷和硫粉末放到真空石英管的另一端,采用空间受限化学气相透射方法制备了超薄二维In2(PS3)3纳米片,在氟金云母的中间层中获得超薄单层2D In2(PS3)3纳米层;真空石英管的密封在压力小于10mbar,以5℃/min的加热速率将整个石英管加热至600℃持续6h;之后,将炉以2℃/min的速率冷却至室温。
9.根据权利要求6所述的一种二维直接带隙半导体探测器的制备方法,其特征在于,步骤3)具体为,生长有二维In2(PS3)3纳米层的氟金云母基底粘在一个2*2cm的薄玻璃片上,然后将PMMA以3000rad/s的速度旋涂30s覆盖在氟金云母上,然后在135℃的加热台上加热10min,用刀片将氟金云母片与薄玻璃脱离;在培养皿中倒入去离子水,将生长有二维In2(PS3)3纳米层的氟金云母片浸泡40min,取出后放置在去离子水表面,用镊子上下按压氟金云母片,利用水的表面张力让携带纳米层的PMMA与氟金云母片基底脱离;在步骤2制备的银电极层上设置掩膜板,利用掩膜板遮挡部分底电极后,利用设置了掩膜板的云母片把PMMA从去离子水中捞起,用滤纸吸干水分,在加热台上以150℃加热30min,然后取下等待自然降温;将制备了底电极且部分覆盖了掩膜板的云母片放入丙酮中,静泡30min后,放在加热台上以60℃的温度加热30min,然后等待自然降温后,去掉掩膜板,将云母片放入IPA溶液中,然后取出用洗耳球吹干。
10.根据权利要求6所述的一种二维直接带隙半导体探测器的制备方法,其特征在于,步骤4)具体为,利用磁控溅射在In2(PS3)3纳米层上生长透明电极ITO,生长时间20min,温度为100度,或者利用电镀技术利用掩膜制备银栅线。
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