CN108493273B - 一种ⅱ-类超晶格红外探测器吸收区结构 - Google Patents
一种ⅱ-类超晶格红外探测器吸收区结构 Download PDFInfo
- Publication number
- CN108493273B CN108493273B CN201810410863.4A CN201810410863A CN108493273B CN 108493273 B CN108493273 B CN 108493273B CN 201810410863 A CN201810410863 A CN 201810410863A CN 108493273 B CN108493273 B CN 108493273B
- Authority
- CN
- China
- Prior art keywords
- layer
- gasb
- superlattice
- thickness
- insb
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000010521 absorption reaction Methods 0.000 title claims abstract description 37
- 229910005542 GaSb Inorganic materials 0.000 claims abstract description 68
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims abstract description 44
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 26
- 229910000673 Indium arsenide Inorganic materials 0.000 claims abstract description 26
- 239000000126 substance Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 6
- 238000000407 epitaxy Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 12
- 238000004020 luminiscence type Methods 0.000 description 8
- 238000002474 experimental method Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000000927 vapour-phase epitaxy Methods 0.000 description 5
- 238000005424 photoluminescence Methods 0.000 description 4
- 230000005428 wave function Effects 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000005431 greenhouse gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810410863.4A CN108493273B (zh) | 2018-05-02 | 2018-05-02 | 一种ⅱ-类超晶格红外探测器吸收区结构 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810410863.4A CN108493273B (zh) | 2018-05-02 | 2018-05-02 | 一种ⅱ-类超晶格红外探测器吸收区结构 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108493273A CN108493273A (zh) | 2018-09-04 |
CN108493273B true CN108493273B (zh) | 2023-11-21 |
Family
ID=63352799
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810410863.4A Active CN108493273B (zh) | 2018-05-02 | 2018-05-02 | 一种ⅱ-类超晶格红外探测器吸收区结构 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108493273B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109950339A (zh) * | 2019-03-27 | 2019-06-28 | 浙江焜腾红外科技有限公司 | 用于有毒气体监测的超中波红外探测器 |
CN112864259B (zh) * | 2019-11-12 | 2022-09-20 | 中国科学院苏州纳米技术与纳米仿生研究所 | 主被动红外探测器及其制作方法 |
CN116623285B (zh) * | 2023-07-21 | 2023-10-13 | 苏州晶歌半导体有限公司 | 一种石墨盘的清理方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102157903A (zh) * | 2011-01-25 | 2011-08-17 | 中国科学院半导体研究所 | “w”型锑化物二类量子阱的外延生长方法 |
CN102315126A (zh) * | 2010-07-07 | 2012-01-11 | 中国科学院微电子研究所 | 半导体器件及其制作方法 |
CN102436532A (zh) * | 2011-11-28 | 2012-05-02 | 华北电力大学 | InAs/GaSb超晶格电子结构的设计方法 |
CN103233271A (zh) * | 2013-04-18 | 2013-08-07 | 中国科学院半导体研究所 | 一种在GaAs衬底上外延生长InAs/GaSb二类超晶格的方法 |
CN103887360A (zh) * | 2014-04-16 | 2014-06-25 | 中国科学院半导体研究所 | InAs/GaSb超晶格红外光电探测器及其制备方法 |
CN105932106A (zh) * | 2016-05-26 | 2016-09-07 | 中国科学院半导体研究所 | InAs/InSb/GaSb/InSbⅡ类超晶格材料制造方法及产品 |
CN207282503U (zh) * | 2017-07-12 | 2018-04-27 | 秦皇岛博硕光电设备股份有限公司 | InAs/GaSbⅡ类超晶格 |
CN208422929U (zh) * | 2018-05-02 | 2019-01-22 | 嘉兴风云科技有限责任公司 | 一种ⅱ-类超晶格红外探测器吸收区结构 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5842894B2 (ja) * | 2013-10-25 | 2016-01-13 | 住友電気工業株式会社 | 半導体素子 |
-
2018
- 2018-05-02 CN CN201810410863.4A patent/CN108493273B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102315126A (zh) * | 2010-07-07 | 2012-01-11 | 中国科学院微电子研究所 | 半导体器件及其制作方法 |
CN102157903A (zh) * | 2011-01-25 | 2011-08-17 | 中国科学院半导体研究所 | “w”型锑化物二类量子阱的外延生长方法 |
CN102436532A (zh) * | 2011-11-28 | 2012-05-02 | 华北电力大学 | InAs/GaSb超晶格电子结构的设计方法 |
CN103233271A (zh) * | 2013-04-18 | 2013-08-07 | 中国科学院半导体研究所 | 一种在GaAs衬底上外延生长InAs/GaSb二类超晶格的方法 |
CN103887360A (zh) * | 2014-04-16 | 2014-06-25 | 中国科学院半导体研究所 | InAs/GaSb超晶格红外光电探测器及其制备方法 |
CN105932106A (zh) * | 2016-05-26 | 2016-09-07 | 中国科学院半导体研究所 | InAs/InSb/GaSb/InSbⅡ类超晶格材料制造方法及产品 |
CN207282503U (zh) * | 2017-07-12 | 2018-04-27 | 秦皇岛博硕光电设备股份有限公司 | InAs/GaSbⅡ类超晶格 |
CN208422929U (zh) * | 2018-05-02 | 2019-01-22 | 嘉兴风云科技有限责任公司 | 一种ⅱ-类超晶格红外探测器吸收区结构 |
Also Published As
Publication number | Publication date |
---|---|
CN108493273A (zh) | 2018-09-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108493273B (zh) | 一种ⅱ-类超晶格红外探测器吸收区结构 | |
KR102427203B1 (ko) | n-형 및 p-형 초격자를 포함하는 전자 디바이스 | |
CN106960887B (zh) | 一种铝镓氮基日盲紫外探测器及其制备方法 | |
US20110290310A1 (en) | Solar cell and solar cell manufacturing method | |
US8952242B2 (en) | Nanostructured quantum dots or dashes in photovoltaic devices and methods thereof | |
CN101971367B (zh) | 红外线发光元件 | |
EP3378104A1 (de) | Solarzelle mit mehreren durch ladungsträger-selektive kontakte miteinander verbundenen absorbern | |
EP2306523B1 (en) | Infrared detector, infrared detecting apparatus and method of manufacturing infrared detector | |
WO2012060274A1 (ja) | 量子ドット構造体および量子ドット構造体の形成方法ならびに波長変換素子、光光変換装置および光電変換装置 | |
JP2009010175A (ja) | 受光素子およびその製造方法 | |
JP2010021189A (ja) | 光電デバイス | |
CN111129187B (zh) | 红外光探测器及其制作方法 | |
Mazur et al. | Photoluminescence study of carrier transfer among vertically aligned double-stacked InAs/GaAs quantum dot layers | |
CN112038215B (zh) | 石墨烯载流子调控方法以及石墨烯量子霍尔器件 | |
Plis et al. | Molecular beam epitaxy growth and characterization of type-II InAs/GaSb strained layer superlattices for long-wave infrared detection | |
CN108470793B (zh) | 紫外-红外双波段集成p-i-n型光电探测器 | |
KR20140041605A (ko) | 양자 나노 도트, 2차원 양자 나노 도트 어레이 및 이것을 사용한 반도체 장치 및 제조 방법 | |
CN208422929U (zh) | 一种ⅱ-类超晶格红外探测器吸收区结构 | |
CN110137277A (zh) | 非极性自支撑GaN基pin紫外光电探测器及制备方法 | |
CN113299778B (zh) | 硒化铋/碲化铋超晶格红外双波段探测器及其制备方法 | |
CN111106203B (zh) | 红外探测器及其制作方法 | |
CN113782403B (zh) | 一种AlGaN/GaN量子阱近红外-紫外双色探测光电阴极及其制备工艺 | |
CN114335244B (zh) | 热载流子双向分离型类p-i-n型二维异质结及制备方法、器件 | |
CN117747692B (zh) | 一种高量子效率的短中波超晶格双色探测器 | |
CN113725310B (zh) | 一种多结型锗基长波红外探测器及制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Zhan Jianlong Inventor after: Ru Guohai Inventor before: Zhan Jianlong Inventor before: Mushroom country sea |
|
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20210428 Address after: Room 104, Building 10, Jiaxing Intelligent Industry Innovation Park, 36 Changsheng South Road, Jiaxing Economic and Technological Development Zone, Zhejiang 314000 Applicant after: ZHEJIANG KUNTENG INFRARED TECHNOLOGY Co.,Ltd. Address before: Room 101, Building 10, Jiaxing Intelligent Industry Innovation Park, 36 Changsheng South Road, Jiaxing Economic and Technological Development Zone, Zhejiang Province Applicant before: JIAXING FENGYUN TECHNOLOGY Co.,Ltd. |
|
GR01 | Patent grant | ||
GR01 | Patent grant |