CN104143518A - 制造半导体器件的方法以及半导体器件 - Google Patents

制造半导体器件的方法以及半导体器件 Download PDF

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Publication number
CN104143518A
CN104143518A CN201410199214.6A CN201410199214A CN104143518A CN 104143518 A CN104143518 A CN 104143518A CN 201410199214 A CN201410199214 A CN 201410199214A CN 104143518 A CN104143518 A CN 104143518A
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semiconductor chip
chip
semiconductor
wire
pads
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CN201410199214.6A
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Chinese (zh)
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金本光一
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Renesas Electronics Corp
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Renesas Electronics Corp
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/811Multiple chips on leadframes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00Marks applied to devices, e.g. for alignment or identification
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/411Chip-supporting parts, e.g. die pads
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/421Shapes or dispositions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/421Shapes or dispositions
    • H10W70/424Cross-sectional shapes
    • H10W70/427Bent parts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/456Materials
    • H10W70/457Materials of metallic layers on leadframes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27Structural arrangements therefor
    • H10P74/277Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00Marks applied to devices, e.g. for alignment or identification
    • H10W46/301Marks applied to devices, e.g. for alignment or identification for alignment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00Marks applied to devices, e.g. for alignment or identification
    • H10W46/501Marks applied to devices, e.g. for alignment or identification for use before dicing
    • H10W46/503Located in scribe lines
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/461Leadframes specially adapted for cooling
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/0711Apparatus therefor
    • H10W72/07141Means for applying energy, e.g. ovens or lasers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07531Techniques
    • H10W72/07532Compression bonding, e.g. thermocompression bonding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07531Techniques
    • H10W72/07532Compression bonding, e.g. thermocompression bonding
    • H10W72/07533Ultrasonic bonding, e.g. thermosonic bonding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/536Shapes of wire connectors the connected ends being ball-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5363Shapes of wire connectors the connected ends being wedge-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/5434Dispositions of bond wires the connected ends being on auxiliary connecting means on bond pads, e.g. on other bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/5449Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/931Shapes of bond pads
    • H10W72/932Plan-view shape, i.e. in top view
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/951Materials of bond pads
    • H10W72/952Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Wire Bonding (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
CN201410199214.6A 2013-05-10 2014-05-12 制造半导体器件的方法以及半导体器件 Pending CN104143518A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-099833 2013-05-10
JP2013099833A JP2014220439A (ja) 2013-05-10 2013-05-10 半導体装置の製造方法および半導体装置

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CN104143518A true CN104143518A (zh) 2014-11-12

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US (2) US9275945B2 (https=)
JP (1) JP2014220439A (https=)
CN (1) CN104143518A (https=)
HK (1) HK1198783A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107799484A (zh) * 2016-08-31 2018-03-13 英飞凌科技奥地利有限公司 具有重复的覆盖区模的半导体芯片封装
CN108364939A (zh) * 2016-12-28 2018-08-03 瑞萨电子株式会社 半导体装置及其制造方法
CN108461468A (zh) * 2017-02-22 2018-08-28 株式会社村田制作所 半导体装置及其制造方法

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US9893058B2 (en) * 2015-09-17 2018-02-13 Semiconductor Components Industries, Llc Method of manufacturing a semiconductor device having reduced on-state resistance and structure
JP6673012B2 (ja) * 2016-05-26 2020-03-25 三菱電機株式会社 半導体装置およびその製造方法
US10741466B2 (en) 2017-11-17 2020-08-11 Infineon Technologies Ag Formation of conductive connection tracks in package mold body using electroless plating
US10777536B2 (en) 2017-12-08 2020-09-15 Infineon Technologies Ag Semiconductor package with air cavity
JP7199167B2 (ja) 2018-06-29 2023-01-05 三菱電機株式会社 パワー半導体モジュール、電力変換装置、およびパワー半導体モジュールの製造方法
US10796981B1 (en) 2019-04-04 2020-10-06 Infineon Technologies Ag Chip to lead interconnect in encapsulant of molded semiconductor package
US11133281B2 (en) 2019-04-04 2021-09-28 Infineon Technologies Ag Chip to chip interconnect in encapsulant of molded semiconductor package
CN112018052A (zh) 2019-05-31 2020-12-01 英飞凌科技奥地利有限公司 具有可激光活化模制化合物的半导体封装
KR102119142B1 (ko) * 2019-10-01 2020-06-05 해성디에스 주식회사 웨이퍼 레벨 패키지의 캐리어를 리드 프레임으로 제작하는 방법
CN111354718B (zh) * 2020-03-23 2022-02-25 江苏中科智芯集成科技有限公司 含多芯片封装结构的芯片排列布线方法、装置及电子设备
US11587800B2 (en) 2020-05-22 2023-02-21 Infineon Technologies Ag Semiconductor package with lead tip inspection feature
DE102021104696A1 (de) * 2021-02-26 2022-09-01 Infineon Technologies Ag Verfahren zur verbindung eines elektrischen bauelementes mit einer bodeneinheit unter verwendung einer lötfreien verbindung

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JPH11163238A (ja) * 1997-11-21 1999-06-18 Nec Corp 半導体装置
JP2002076234A (ja) * 2000-08-23 2002-03-15 Rohm Co Ltd 樹脂封止型半導体装置
US20020180020A1 (en) * 2001-06-01 2002-12-05 Chih-Wen Lin Three-dimension multi-chip stack package technology
JP2004356382A (ja) * 2003-05-29 2004-12-16 Renesas Technology Corp 半導体集積回路装置
CN1996584A (zh) * 2006-01-06 2007-07-11 株式会社瑞萨科技 半导体器件及其制造方法
JP2010087129A (ja) * 2008-09-30 2010-04-15 Sanyo Electric Co Ltd 回路装置およびその製造方法
CN102184907A (zh) * 2011-04-19 2011-09-14 无锡红光微电子有限公司 To3p防水密封引线框架

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JP5302175B2 (ja) 2009-12-14 2013-10-02 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
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JPH11163238A (ja) * 1997-11-21 1999-06-18 Nec Corp 半導体装置
JP2002076234A (ja) * 2000-08-23 2002-03-15 Rohm Co Ltd 樹脂封止型半導体装置
US20020180020A1 (en) * 2001-06-01 2002-12-05 Chih-Wen Lin Three-dimension multi-chip stack package technology
JP2004356382A (ja) * 2003-05-29 2004-12-16 Renesas Technology Corp 半導体集積回路装置
CN1996584A (zh) * 2006-01-06 2007-07-11 株式会社瑞萨科技 半导体器件及其制造方法
JP2010087129A (ja) * 2008-09-30 2010-04-15 Sanyo Electric Co Ltd 回路装置およびその製造方法
CN102184907A (zh) * 2011-04-19 2011-09-14 无锡红光微电子有限公司 To3p防水密封引线框架

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107799484A (zh) * 2016-08-31 2018-03-13 英飞凌科技奥地利有限公司 具有重复的覆盖区模的半导体芯片封装
CN108364939A (zh) * 2016-12-28 2018-08-03 瑞萨电子株式会社 半导体装置及其制造方法
CN108364939B (zh) * 2016-12-28 2023-01-06 瑞萨电子株式会社 半导体装置及其制造方法
CN108461468A (zh) * 2017-02-22 2018-08-28 株式会社村田制作所 半导体装置及其制造方法
US11417625B2 (en) 2017-02-22 2022-08-16 Murata Manufacturing Co., Ltd. Semiconductor device having an electrical connection between semiconductor chips established by wire bonding, and method for manufacturing the same

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US20160155710A1 (en) 2016-06-02
US9385072B2 (en) 2016-07-05
HK1198783A1 (en) 2015-06-05
US9275945B2 (en) 2016-03-01
JP2014220439A (ja) 2014-11-20
US20140332942A1 (en) 2014-11-13

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