CN104081520A - 具有衬底穿孔的集成电路构造及形成具有衬底穿孔的集成电路构造的方法 - Google Patents

具有衬底穿孔的集成电路构造及形成具有衬底穿孔的集成电路构造的方法 Download PDF

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Publication number
CN104081520A
CN104081520A CN201280065963.9A CN201280065963A CN104081520A CN 104081520 A CN104081520 A CN 104081520A CN 201280065963 A CN201280065963 A CN 201280065963A CN 104081520 A CN104081520 A CN 104081520A
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substrate
epoxy resin
soldering flux
integrated circuit
indivedual
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CN104081520B (zh
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杰斯皮德·S·甘德席
布兰登·P·沃兹
孙洋洋
乔许·D·伍德兰
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Micron Technology Inc
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Micron Technology Inc
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Abstract

本发明揭示一种集成电路构造，其包含两个或两个以上集成电路衬底的堆叠。所述衬底中的至少一者包含个别地包括相对端的衬底穿孔TSV。导电接合垫邻近所述一个衬底的一侧上的所述端的一者。导电焊料块邻近在所述一个衬底的另一侧上隆起地突出的另一端。所述焊料块中的个别者接合到所述堆叠的直接邻近衬底上的相应接合垫。环氧树脂助焊剂包围所述个别焊料块。在组成上与所述环氧树脂助焊剂不同的环氧树脂材料包围所述个别焊料块上的所述环氧树脂助焊剂。本发明还揭示形成集成电路构造的方法。

Description

具有衬底穿孔的集成电路构造及形成具有衬底穿孔的集成电路构造的方法
技术领域
本文中所揭示的实施例涉及具有衬底穿孔的集成电路构造及形成具有衬底穿孔的集成电路构造的方法。
背景技术
衬底穿孔(TSV)为完全穿过其内具有集成电路的衬底的垂直电连接。TSV可用于产生3D集成电路封装，且为其它技术(例如堆叠封装)的改进，这是因为衬底穿孔的密度可实质上更高。TSV通过内部布线而提供对垂直对准的电子装置的互连，其可减小多芯片集成电路的复杂性及总尺寸。
含有TSV的一些个别集成电路衬底具有与衬底的一侧上的TSV的一端邻近连接的接合垫。柱状导电构造与另一端邻近连接且从衬底的另一侧突出，其中所述柱状导电构造的隆起最外部分为焊料。可通过使焊料抵靠另一衬底的对准接合垫而将两个集成电路衬底接合在一起。接着，可加热所得构造以致使焊料流动且与相应接合垫接合。可在使衬底彼此接触之前将助焊剂施加到焊料。助焊剂含有在可进行充分加热以使焊料与接合垫接合之前促进直接邻近的衬底固持在一起的粘着剂。在接合完成之后，可将介电底层填料提供于衬底之间以增加支撑及保护。
可使介电底层填料在衬底之间底层填料流动之前通过清洗而移除残余助焊剂。替代地，一些助焊剂在业界被称为“免清洗助焊剂”，借此助焊剂残余物在介电底层填料流动之前有意地余留于衬底之间。无论如何，即使试图在介电底层填料之前清除助焊剂残余物，通常也无法移除全部残余物。在此类情况下，助焊剂的移除难度已随直接邻近电路衬底之间的间隔距离变小而增大。
具有介电底层填料的构造可经受可导致助焊剂残余物气化的随后加热。这可导致构造出故障，其包含使焊料结合剂与接合垫分离。这随直接邻近衬底之间的间隔不断减小(具体来说，在距离为40微米或更小时)而变得尤其成问题。
附图说明
图1为通过图2中的线1-1取得的根据本发明的实施例的集成电路构造的图解截面图。
图2为通过图1中的线2-2取得的图1的衬底的截面图。
图3为图1的衬底的一部分的放大图，即，图1中的圆圈3内的部分的放大图。
图4为根据本发明的实施例的集成电路构造的图解截面图及图1中所展示的构造的替代例。
图5为准备用在形成根据本发明的实施例的集成电路构造的方法中的单独集成电路衬底的图解视图。
图6为形成根据本发明的实施例的集成电路构造的方法中的实例性工艺步骤的图解视图。
图7为在由图6展示的步骤之后的处理步骤处的图6的组件的视图。
图8为在由图6及7展示的步骤之后的处理步骤处的图5到7的组件中的若干者的视图。
图9为在由图8展示的步骤之后的处理步骤处的图8的组件的视图。
具体实施方式
本发明的实施例涵盖集成电路构造及形成集成电路构造的方法。首先，参考图1到3而描述集成电路构造10的实例性实施例。根据本发明的集成电路构造包括两个或两个以上集成电路衬底的堆叠。实例性构造10包括三个集成电路衬底14、16及18的堆叠12，所述集成电路衬底可例如为已在制造完成时被切割为半导体晶片的部分的个别裸片。可使用替代衬底，其包含带有电路的不同制造类型衬底的组合。衬底14、16、18可包含半导体材料(例如硅)、电介质及导电材料。集成电路衬底14、16、18可被视为具有相对侧20与22，所述侧具有相应外表面21。此类表面可实质上平坦或可实质上不平坦及/或彼此平行。
集成电路衬底中的至少一者包括TSV，其中衬底14、16、18中的每一者在所描绘实例中具有TSV24。在此项技术中，衬底穿孔也已被称为硅穿孔。在本文献中，“衬底穿孔”(TSV)涵盖或一般是指硅穿孔，且TSV包含延伸穿过衬底材料的导电通孔，无论所述材料中的任何者是否为硅。TSV24可包括与本发明无关的任何一或多种适合导电材料，其包含(若干)导电掺杂半导体材料。
TSV24个别地包括相对端26与28。就集成电路衬底14及16来说，TSV24包含与衬底侧20上的TSV端26邻近的导电接合垫30。在一个实施例中且如图所展示，接合垫30相对于衬底14、16、18的外表面21而凸起。例如，接合垫30具有隆起最外表面31及周围横向侧表面33(图3)。导电焊料块32与另一TSV端28邻近且在集成电路衬底14及16的另一侧22上隆起地突出。在一个实施例中且如图所展示，导电材料34介于个别TSV24与个别焊料块32之间。作为替代实例，焊料块32可直接抵靠TSV24的端28而接合(图中未展示)。在本文献中，当存在所陈述材料或结构相对彼此的至少一些物理触碰接触时，材料或结构“直接抵靠”另一材料或构造。相比而言，前面未加“直接”的“在…上方”、“在…上”及“抵靠…”涵盖“直接抵靠”以及其中(若干)介入材料或结构导致所陈述材料或结构彼此无物理触碰接触的构造。
导电材料34及焊料块32中的每一者可同质或非同质，且可为或与本发明无关的任何适合导电材料。无论如何，当使用导电材料34时，导电材料34包含直接抵靠个别焊料块的某一部分，所述部分具有与个别焊料块不同的组成。导电材料34及焊料块32可被视为形成在集成电路衬底14及16的衬底侧22上隆起地突出的导电支柱。
实例性集成电路衬底18包括与TSV24的两端邻近的接合垫30。作为实例，集成电路构造或封装10可最终具有由安装到另一衬底(例如印刷电路板)的导线或其它导体接合的衬底18的侧22上的接合垫30。无论如何，根据本发明的实施例的集成电路构造包括至少两个集成电路衬底的堆叠，所述集成电路衬底中的至少一者具有TSV，TSV具有与其一端邻近的接合垫及与其另一端邻近的焊料块，例如衬底14及16中的任一者所展示。
焊料块中的个别者接合到堆叠的直接邻近衬底上的相应接合垫。为了便利，主要参考堆叠12的电路衬底16及18而进行论述，但可存在相似结构且相对于衬底14及16而展示相似结构。焊料块32可被视为与衬底16相关联且接合到堆叠12的直接邻近衬底18的接合垫30。
环氧树脂助焊剂38包围个别焊料块32。组成上与环氧树脂助焊剂38不同的环氧树脂材料40包围个别焊料块32上的环氧树脂助焊剂38。环氧树脂助焊剂38及介电填充材料40中的每一者可独立地同质或非同质。环氧树脂助焊剂38的实例性横向厚度范围是从约5微米到约30微米。环氧树脂助焊剂38可具有可变横向厚度，例如如图所展示。包围直接邻近焊料块32及/或直接邻近导电材料34结构的环氧树脂助焊剂可使此类邻近块及/或构造彼此互连(图中未展示)。另外，具有环氧树脂材料的环氧树脂助焊剂的界面将比展示为使环氧树脂助焊剂38与环氧树脂材料40分离的难界定的界面线更可能构成两种不同材料的混合物(图中未明确展示)。因此，对厚度的参考是相对于不同组成环氧树脂助焊剂38与环氧树脂材料40之间的更可能混合的界面区的横向中点。环氧树脂助焊剂38及环氧树脂材料40(即，底层填料)的实例性适合前体购自加州尔湾市的汉高公司。
在一个实施例中且如图所展示，环氧树脂助焊剂38从衬底16延伸到直接邻近衬底18(即，环氧树脂助焊剂38直接抵靠每一衬底16及18的至少某一部分，其中个别接合垫被视为某一衬底的一部分)。替代地，环氧树脂助焊剂可仅隆起地延伸到衬底16及18中的一者(图中未展示)或不隆起地延伸到衬底16及18中的任一者(图中未展示)。环氧树脂助焊剂可被连续或间断地接纳到焊料块32周围，且可以类似方式相对于焊料块32而连续或间断地隆起延伸。当此情况存在且环氧树脂助焊剂被横向接纳到导电材料34上时，环氧树脂助焊剂可相对于导电材料34而连续或间断延伸。
在一个实施例中，环氧树脂材料40从衬底16延伸到直接邻近衬底18(即，环氧树脂材料40直接抵靠每一衬底16及18)。替代地，环氧树脂材料40可仅延伸到衬底16及18中的一者(图中未展示)或不延伸到衬底16及18中的任一者(图中未展示)。在一个实施例中且如图所展示，集成电路衬底16及18界定从环氧树脂助焊剂38横向向外的介于集成电路衬底16与18之间的空隙空间42。在一个实施例中且如图所展示，环氧树脂材料40完全填充空隙空间42。
在一个实施例中，环氧树脂助焊剂38直接抵靠焊料块32，且在一个实施例中，环氧树脂材料40直接抵靠环氧树脂助焊剂38。在其中环氧树脂助焊剂38延伸到直接邻近衬底18的一个实施例中且如图所展示，环氧树脂助焊剂38可直接抵靠个别接合垫30的周围横向侧表面33，且在一个实施例中，环氧树脂助焊剂38直接抵靠个别接合垫30的隆起最外表面31。当存在导电材料34时，环氧树脂助焊剂38还可在一个实施例中包围导电材料34且可在一个实施例中可直接抵靠环氧树脂助焊剂38。
在一个实施例中，衬底16与直接邻近衬底18的相对外表面21的最接近部分相隔不足40微米。在一个实施例中，相对外表面21在各处相隔不足40微米。
使用环氧树脂助焊剂及从所述环氧树脂助焊剂横向向外的其它环氧树脂材料可提供与使用环氧树脂填充材料及助焊剂(不是环氧树脂助焊剂)的现有技术方法相比有所改善的助焊剂与填充材料之间的兼容性。此外，使用环氧树脂助焊剂可在归因于实质上完全交联而产生在后续加热之后的减少的残余挥发性成分(如果存在)，且借此可产生更可靠的完成集成电路封装构造。另外，使用环氧树脂助焊剂可与免清洗助焊剂相比而减少残余物体积，其可改善环氧树脂底层填料到紧密空间中的流动。此外，来自预固化环氧树脂助焊剂的残余物本身最终形成可与环氧树脂底层填料非常良好地兼容的固化环氧树脂。另外，环氧树脂助焊剂可在封装组装期间提供比其它非环氧树脂助焊剂增加的粘着性。
图1到3的集成电路构造10为实例性实施例，其中环氧树脂助焊剂38从电路衬底16延伸到电路衬底18。图4展示实例性替代集成电路构造10a，其中环氧树脂助焊剂38a未从电路衬底16延伸到电路衬底18。已在适当时使用来自上述实施例的相同编号，其中用后缀“a”指示一些构造差异。图4的集成电路构造10a展示相对于衬底16、18的实例，其中环氧树脂助焊剂38a延伸到直接邻近衬底18，但未延伸到衬底16。替代地，相对于衬底16、18且举例来说，环氧树脂助焊剂可延伸到电路衬底16且不延伸到电路衬底18(图中未展示)。
上文相对于堆叠内的两个直接邻近衬底而描述的各种关系可适用于或可不适用于所述堆叠中的一些及/或全部其它直接邻近集成电路衬底对。
本发明的实施例还涵盖形成集成电路构造(例如图1到4的构造或其它集成电路构造中的任一者)的方法。本发明的方法实施例涵盖提供两个或两个以上电路衬底，其中所述衬底中的至少一者包括个别地包括相对端的TSV。导电接合垫邻近所述一个衬底的一侧上的所述端中的一者且导电焊料块邻近在所述一个衬底的另一侧上隆起地突出的另一端。例如，图5展示组装成集成电路构造(例如单一电路构造)之前的集成电路衬底14、16及18。
将预固化环氧树脂助焊剂(即，(若干)尚未固化的环氧树脂助焊剂前体)施加到焊料块上。图6展示一个实例性实施例，其中在适合托盘或容器50内提供预固化环氧树脂助焊剂37。电路衬底16已经定位，使得其焊料块32被浸入到预固化的环氧树脂助焊剂37中。预固化的环氧树脂助焊剂可完全或部分覆盖焊料块32。此外，当存在导电材料34时，预固化的环氧树脂助焊剂可覆盖导电材料34的部分、不覆盖导电材料34或覆盖导电材料34的全部。
图7展示从预固化的环氧树脂助焊剂37及容器50移除电路衬底16，其中环氧树脂助焊剂37已被接纳到焊料块32上。
将所述一个衬底放置成抵靠衬底中的另一者，其中其上具有预固化的环氧树脂助焊剂的焊料块中的个别者抵靠另一衬底的相应接合垫。例如，图8展示衬底14、16、18相对于彼此的实例性并置。预固化的环氧树脂助焊剂理想地具有适合的固有粘着性或粘着添加剂以允许例如图8的结构保持足够的结构完整性以使衬底14、16、18固持于相对彼此的适当位置中，如图所展示。
充分加热焊料块以使得其接合到相应接合垫且将预固化的环氧树脂助焊剂固化为包围焊料块中个别者的固化环氧树脂助焊剂38，例如如相对于图9所展示。仅举例来说，图8的构造可经受适合红外线辐射以实现从约240℃到约260℃的实例性组装温度范围以导致焊料接合到接合垫且导致环氧树脂助焊剂固化。如图所展示，环氧树脂助焊剂可流动以围绕导电结构34(如果存在)的多数或全部延伸。随后，用组成上与环氧树脂助焊剂不同的环氧树脂材料包围环氧树脂助焊剂以(例如)产生图1到3的构造或其它构造。
结论
在一些实施例中，一种集成电路构造包括两个或两个以上集成电路衬底的堆叠，所述衬底中的至少一者包括个别地包括相对端的衬底穿孔(TSV)。导电接合垫邻近所述一个衬底的一侧上的所述端中的一者。导电焊料块邻近在所述一个衬底的另一侧上隆起地突出的另一端。所述焊料块中的个别者接合到所述堆叠的直接邻近衬底上的相应接合垫。环氧树脂助焊剂包围所述个别焊料块。组成上与所述环氧树脂助焊剂不同的环氧树脂材料包围所述个别焊料块上的所述环氧树脂助焊剂。
在一些实施例中，一种集成电路构造包括两个或两个以上集成电路衬底的堆叠。所述衬底中的至少一者包括个别地包括相对端的衬底穿孔(TSV)。导电接合垫邻近所述一个衬底的一侧上的所述端中的一者且导电焊料块邻近在所述一个衬底的另一侧上隆起地突出的另一端。导电材料介于所述个别TSV与所述个别焊料块之间。所述导电材料包含直接抵靠所述个别焊料块的一部分。所述部分具有与所述个别焊料块不同的组成。所述个别焊料块接合到所述堆叠的直接邻近衬底上的相应接合垫。环氧树脂助焊剂包围所述个别焊料块及所述导电材料。所述环氧树脂助焊剂从所述一个衬底延伸到所述直接邻近衬底。组成上与所述环氧树脂助焊剂不同的环氧树脂材料包围所述导电材料及所述个别焊料块上的所述环氧树脂助焊剂。所述环氧树脂材料直接抵靠所述环氧树脂助焊剂且从所述一个衬底延伸到所述直接邻近衬底。所述环氧树脂材料完全填充从所述一个衬底与所述直接邻近衬底之间的所述环氧树脂助焊剂横向向外的空隙空间。所述一个衬底与所述直接邻近衬底具有相隔不足40微米的相对外表面的最接近部分。
在一些实施例中，一种形成集成电路构造的方法包括提供两个或两个以上集成电路衬底。所述衬底中的至少一者包括个别地包括相对端的衬底穿孔(TSV)。导电接合垫邻近所述一个衬底的一侧上的所述端中的一者。导电焊料块邻近在所述一个衬底的另一侧上隆起地突出的另一端。将预固化的环氧树脂助焊剂施加到所述焊料块上。将所述一个衬底放置成抵靠所述衬底中的另一者，其中其上具有所述预固化的环氧树脂助焊剂的所述焊料块中的个别者抵靠所述另一衬底的相应接合垫。充分加热所述焊料块以导致其接合到所述相应接合垫且将所述预固化的环氧树脂助焊剂固化为包围所述焊料块中的个别者的固化环氧树脂助焊剂。用组成上与所述环氧树脂助焊剂不同的环氧树脂材料包围将所述个别焊料块包围的所述固化环氧树脂助焊剂。
按照法规，已针对结构及方法特征而或多或少地具体地书面描述本文所揭示的标的物。然而，应了解，权利要求书不受限于所展示及所描述的具体特征，这是因为本文中所揭示的手段包括实例性实施例。因此，权利要求书应被给予字面上措辞的完全范围且应根据等效物的教义而适当解释。

Claims (21)

1.一种集成电路构造，其包括：
两个或两个以上集成电路衬底的堆叠，所述衬底中的至少一者包括个别地包括相对端的衬底穿孔TSV，导电接合垫邻近所述一个衬底的一侧上的所述端中的一者且导电焊料块邻近在所述一个衬底的另一侧上隆起地突出的另一端；
所述焊料块中的个别者接合到所述堆叠的直接邻近衬底上的相应接合垫；
环氧树脂助焊剂包围所述个别焊料块；及
组成上与所述环氧树脂助焊剂不同的环氧树脂材料包围所述个别焊料块上的所述环氧树脂助焊剂。
2.根据权利要求1所述的集成电路构造，其中所述环氧树脂助焊剂延伸到所述直接邻近衬底。
3.根据权利要求2所述的集成电路构造，其中，
所述接合垫相对于所述直接邻近衬底的外表面而凸起，所述相应接合垫具有隆起最外表面且包围横向侧表面；且
所述环氧树脂助焊剂直接抵靠所述个别接合垫的所述周围横向侧表面。
4.根据权利要求3所述的集成电路构造，其中所述环氧树脂助焊剂直接抵靠所述个别接合垫的所述隆起最外表面。
5.根据权利要求1所述的集成电路构造，其中所述环氧树脂助焊剂从所述一个衬底延伸到所述直接邻近衬底。
6.根据权利要求1所述的集成电路构造，其中所述环氧树脂材料从所述一个衬底延伸到所述直接邻近衬底。
7.根据权利要求1所述的集成电路构造，其中所述环氧树脂助焊剂及所述环氧树脂材料从所述一个衬底延伸到所述直接邻近衬底。
8.根据权利要求1所述的集成电路构造，其中所述环氧树脂助焊剂直接抵靠所述焊料块。
9.根据权利要求8所述的方法，其包括介于所述个别TSV与所述个别焊料块之间的导电材料，所述导电材料包含直接抵靠所述个别焊料块的一部分，所述部分具有与所述个别焊料块不同的组成，所述环氧树脂助焊剂直接抵靠所述导电材料。
10.根据权利要求1所述的集成电路构造，其中所述环氧树脂材料直接抵靠所述环氧树脂助焊剂。
11.根据权利要求1所述的集成电路构造，其中所述环氧树脂助焊剂直接抵靠所述焊料块且所述环氧树脂材料直接抵靠所述环氧树脂助焊剂。
12.根据权利要求1所述的集成电路构造，其中所述环氧树脂材料完全填充从所述一个衬底与所述直接邻近衬底之间的所述环氧树脂助焊剂横向向外的空隙空间。
13.根据权利要求1所述的集成电路构造，其中所述环氧树脂助焊剂未从所述一个衬底延伸到所述直接邻近衬底。
14.根据权利要求13所述的集成电路构造，其中所述环氧树脂助焊剂延伸到所述直接邻近衬底。
15.根据权利要求13所述的集成电路构造，其包括介于所述个别TSV与所述个别焊料块之间的导电材料，所述导电材料包含直接抵靠所述个别焊料块的一部分，所述部分具有与所述个别焊料块不同的组成，所述环氧树脂助焊剂直接抵靠所述导电材料。
16.根据权利要求1所述的集成电路构造，其中所述一个衬底及所述直接邻近衬底具有相隔不足40微米的相对外表面的最接近部分。
17.根据权利要求1所述的集成电路构造，其中所述一个衬底及所述直接邻近衬底具有各处均相隔不足40微米的相对外表面。
18.根据权利要求1所述的集成电路构造，其中所述堆叠包括个别地包括TSV的两个以上集成电路衬底。
19.一种集成电路构造，其包括：
两个或两个以上集成电路衬底的堆叠，所述衬底中的至少一者包括个别地包括相对端的衬底穿孔TSV，导电接合垫邻近所述一个衬底的一侧上的所述端中的一者且导电焊料块邻近在所述一个衬底的另一侧上隆起地突出的另一端，导电材料介于所述个别TSV与所述个别焊料块之间，所述导电材料包含直接抵靠所述个别焊料块的一部分，所述部分具有与所述个别焊料块不同的组成；
所述个别焊料块接合到所述堆叠的直接邻近衬底上的相应接合垫；
环氧树脂助焊剂包围所述个别焊料块及所述导电材料，所述环氧树脂助焊剂从所述一个衬底延伸到所述直接邻近衬底；及
组成上与所述环氧树脂助焊剂不同的环氧树脂材料包围所述导电材料及所述个别焊料块上的所述环氧树脂助焊剂，所述环氧树脂材料直接抵靠所述环氧树脂助焊剂且从所述一个衬底延伸到所述直接邻近衬底，所述环氧树脂材料完全填充从所述一个衬底与所述直接邻近衬底之间的所述环氧树脂助焊剂横向向外的空隙空间，所述一个衬底与所述直接邻近衬底具有相隔不足40微米的相对外表面的最接近部分。
20.根据权利要求19所述的集成电路构造，其中，
所述接合垫相对于所述直接邻近衬底的外表面而凸起，所述相应接合垫具有隆起最外表面且包围横向侧表面；且
所述环氧树脂助焊剂直接抵靠所述个别接合垫的所述周围横向侧表面。
21.一种形成集成电路构造的方法，其包括：
提供两个或两个以上集成电路衬底，所述衬底中的至少一者包括个别地包括相对端的衬底穿孔TSV，导电接合垫邻近所述一个衬底的一侧上的所述端中的一者且导电焊料块邻近在所述一个衬底的另一侧上隆起地突出的另一端；
将预固化的环氧树脂助焊剂施加到所述焊料块上；
将所述一个衬底放置成抵靠所述衬底中的另一者，其中其上具有所述预固化的环氧树脂助焊剂的所述焊料块中的个别者抵靠所述另一衬底的相应接合垫；
充分加热所述焊料块以导致其接合到所述相应接合垫且将所述预固化的环氧树脂助焊剂固化为包围所述焊料块中的个别者的固化环氧树脂助焊剂；及
用组成上与所述环氧树脂助焊剂不同的环氧树脂材料包围将所述个别焊料块包围的所述固化环氧树脂助焊剂。
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