JP2015507359A - スルー基板ビアを有する集積回路構造およびスルー基板ビアを有する集積回路構造の形成方法 - Google Patents
スルー基板ビアを有する集積回路構造およびスルー基板ビアを有する集積回路構造の形成方法 Download PDFInfo
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- JP2015507359A JP2015507359A JP2014551249A JP2014551249A JP2015507359A JP 2015507359 A JP2015507359 A JP 2015507359A JP 2014551249 A JP2014551249 A JP 2014551249A JP 2014551249 A JP2014551249 A JP 2014551249A JP 2015507359 A JP2015507359 A JP 2015507359A
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- epoxy
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- 239000000758 substrate Substances 0.000 title claims abstract description 142
- 238000000034 method Methods 0.000 title claims abstract description 13
- 239000004593 Epoxy Substances 0.000 claims abstract description 133
- 230000004907 flux Effects 0.000 claims abstract description 111
- 229910000679 solder Inorganic materials 0.000 claims abstract description 90
- 239000000463 material Substances 0.000 claims abstract description 48
- 239000000203 mixture Substances 0.000 claims abstract description 14
- 239000004020 conductor Substances 0.000 claims description 29
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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Abstract
Description
幾つかの実施形態においては、集積回路構造は、二つ以上の集積回路基板の積層を含み、基板のうちの少なくとも一つは、逆端を個々に含むスルー基板ビア(TSV)を含む。導電性ボンドパッドは、一基板のうちの一側面上の端部の一つに隣接する。導電性はんだマスは、一基板の他側面上に高さ方向に突出する他端と隣接する。個々のはんだマスは、積層の直接隣接する基板上の其々のボンドパッドへと結合される。エポキシフラックスは、個々のはんだマスを包囲する。エポキシフラックスと異なる組成のエポキシ材料は、個々のはんだマス上のエポキシフラックスを包囲する。
Claims (21)
- 二つ以上の集積回路基板の積層であって、前記複数の基板のうちの少なくとも一つは、複数の逆端を個々に含む複数のスルー基板ビア(TSV)と、前記一基板の一側面上の前記複数の端部のうちの一つに隣接する導電性ボンドパッドと、前記一基板の他側面上に高さ方向に突出する前記他端に隣接する導電性はんだマスと、を含む、二つ以上の集積回路基板の積層と、
前記積層の直接隣接する基板上の其々のボンドパッドへと結合された前記個々の複数のはんだマスと、
前記個々の複数のはんだマスを包囲するエポキシフラックスと、
前記個々の複数のはんだマス上の前記エポキシフラックスを包囲する前記エポキシフラックスとは組成が異なるエポキシ材料と、
を含む、
ことを特徴とする集積回路構造。 - 前記エポキシフラックスは前記直接隣接する基板へと伸長する、
ことを特徴とする請求項1に記載の集積回路構造。 - 前記複数のボンドパッドは、前記直接隣接する基板の外側表面に対して隆起され、前記複数の其々のボンドパッドは、高さ方向の最外部表面および複数の周囲の横方向側面表面を有し、
前記エポキシフラックスは、前記複数の個々のボンドパッドの前記複数の周囲の横方向側面表面に直接相対する、
ことを特徴とする請求項2に記載の集積回路構造。 - 前記エポキシフラックスは、前記複数の個々のボンドパッドの前記高さ方向の最外部表面に直接相対する、
ことを特徴とする請求項3に記載の集積回路構造。 - 前記エポキシフラックスは、前記一基板から前記直接隣接する基板へと伸長する、
ことを特徴とする請求項1に記載の集積回路構造。 - 前記エポキシ材料は、前記一基板から前記直接隣接する基板へと伸長する、
ことを特徴とする請求項1に記載の集積回路構造。 - 前記エポキシフラックスおよび前記エポキシ材料は、前記一基板から、前記直接隣接する基板へと伸長する、
ことを特徴とする請求項1に記載の集積回路構造。 - 前記エポキシフラックスは、前記複数のはんだマスに直接相対する、
ことを特徴とする請求項1に記載の集積回路構造。 - 前記個々の複数のTSVと前記個々の複数のはんだマスの間の導電性材料を含み、前記導電性材料は、前記個々の複数のはんだマスに直接相対する部分を含み、前記部分は、前記個々の複数のはんだマスと異なる組成であって、前記エポキシフラックスは、前記導電性材料に直接相対する、
ことを特徴とする請求項8に記載の方法。 - 前記エポキシ材料は前記エポキシフラックスに直接相対する、
ことを特徴とする請求項1に記載の集積回路構造。 - 前記エポキシフラックスは、前記複数のはんだマスに直接相対し、前記エポキシ材料は、前記エポキシフラックスに直接相対する、
ことを特徴とする請求項1に記載の集積回路構造。 - 前記エポキシ材料は、前記一基板と前記直接隣接する基板の間の前記エポキシフラックスの横方向の外側の間隙空間を完全に充填する、
ことを特徴とする請求項1に記載の集積回路構造。 - 前記エポキシフラックスは、前記一基板から前記直接隣接する基板へと伸長しない、
ことを特徴とする請求項1に記載の集積回路構造。 - 前記エポキシフラックスは、前記直接隣接する基板へと伸長する、
ことを特徴とする請求項13に記載の集積回路構造。 - 前記複数の個々のTSVと前記複数の個々のはんだマスの間の導電性材料を含み、前記導電性材料は、前記複数の個々のはんだマスに直接相対する部分を含み、前記部分は、前記個々の複数のはんだマスと異なる組成であって、前記エポキシフラックスは、前記導電性材料に直接相対する、
ことを特徴とする請求項13に記載の集積回路構造。 - 前記一基板および前記直接隣接する基板は、40ミクロン以上離れていない複数の外接表面の近接部分を有する、
ことを特徴とする請求項1に記載の集積回路構造。 - 前記一基板および前記直接隣接する基板は、何れの場所においても40ミクロン以上離れていない複数の外接接面を有する、
ことを特徴とする請求項1に記載の集積回路構造。 - 前記積層は、複数のTSVを個々に含む二つ以上の集積回路基板を含む、
ことを特徴とする請求項1に記載の集積回路構造。 - 二つ以上の集積回路基板の積層であって、前記複数の基板のうちの少なくとも一つは、複数の逆端を個々に含む複数のスルー基板ビア(TSV)と、前記一基板の一側面上の前記複数の端部のうちの一つに隣接する導電性ボンドパッドと、前記一基板の他側面上に高さ方向に突出する前記他端に隣接する導電性はんだマスと、前記個々の複数のTSVと前記個々の複数のはんだマスの間の導電性材料と、を含み、前記導電性材料は、前記個々の複数のはんだマスに直接相対する部分を含み、前記部分は、前記個々の複数のはんだマスとは異なる組成である、二つ以上の集積回路基板の積層と、
前記積層の直接隣接する基板上の其々のボンドパッドへと結合された前記個々の複数のはんだマスと、
前記個々の複数のはんだマスと前記導電性材料を包囲するエポキシフラックスであって、前記一基板から前記直接隣接する基板へと伸長する、エポキシフラックスと、
前記導電性材料上の前記エポキシフラックスおよび前記個々の複数のはんだマスを包囲する前記エポキシフラックスとは組成が異なるエポキシ材料であって、前記エポキシ材料は、前記エポキシフラックスに直接相対し、前記一基板から前記直接隣接する基板へと伸長し、前記エポキシ材料は、前記一基板と前記直接隣接する基板の間の前記エポキシフラックスの横方向の外側である間隙空間を完全に充填し、前記一基板および前記直接隣接する基板は40ミクロン以上離れていない複数の外接表面の近接部分を有する、エポキシ材料と、
を含む、
ことを特徴とする集積回路構造。 - 前記複数のボンドパッドは、前記直接隣接する基板の外側表面に対して隆起され、前記複数の其々のボンドパッドは、高さ方向の最外部表面と周囲の複数の横方向側面表面を有し、
前記エポキシフラックスは、前記複数の個々のボンドパッドの前記周囲の複数の横方向側面表面に直接相対する、
ことを特徴とする請求項19に記載の集積回路構造。 - 集積回路構造の形成方法であって、
二つ以上の集積回路基板を提供することであって、前記複数の基板のうちの少なくとも一つは、個々に複数の逆端を含む複数のスルーシリコンビア(TSV)と、前記一基板の一側面上の前記複数の端部のうちの一つに隣接する導電性ボンドパッドと、前記一基板の他側面上に高さ方向に突出する前記他端に隣接する導電性はんだマスと、を含む、二つ以上の集積回路基板を提供することと、
前記複数のはんだマス上に早期硬化エポキシフラックスを適用することと、
前記別の基板の其々の複数のボンドパッドに相対する前記早期硬化エポキシフラックスをその上に有する、前記個々の複数のはんだマスで、前記複数の基板のうちの別の基板に相対する前記一基板を配置することと
前記複数のはんだマスに前記其々の複数のボンドパッドへと結合させ、かつ、前記早期硬化エポキシフラックスを前記複数の個々のはんだマスを包囲する硬化エポキシフラックスへと硬化させるほど十分に、前記複数のはんだマスを加熱することと、
前記エポキシフラックスと異なる組成のエポキシ材料で、前記個々の複数のはんだマスを包囲する前記硬化エポキシフラックスを包囲することと、
を含む、
ことを特徴とする方法。
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