CN103965584B - 薄片的制造方法 - Google Patents
薄片的制造方法 Download PDFInfo
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- CN103965584B CN103965584B CN201410181157.9A CN201410181157A CN103965584B CN 103965584 B CN103965584 B CN 103965584B CN 201410181157 A CN201410181157 A CN 201410181157A CN 103965584 B CN103965584 B CN 103965584B
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- resin
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- epoxy resin
- formula
- sealing semiconductor
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- 238000000034 method Methods 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000003822 epoxy resin Substances 0.000 claims abstract description 112
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 112
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims abstract description 111
- 239000004065 semiconductor Substances 0.000 claims abstract description 109
- 239000000203 mixture Substances 0.000 claims abstract description 90
- 239000011342 resin composition Substances 0.000 claims abstract description 79
- 238000007789 sealing Methods 0.000 claims abstract description 75
- 229920001568 phenolic resin Polymers 0.000 claims abstract description 63
- 239000005011 phenolic resin Substances 0.000 claims abstract description 61
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 59
- 238000005227 gel permeation chromatography Methods 0.000 claims abstract description 35
- 239000011256 inorganic filler Substances 0.000 claims abstract description 17
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 17
- 238000000748 compression moulding Methods 0.000 claims abstract description 6
- 239000008187 granular material Substances 0.000 claims abstract description 5
- 239000000843 powder Substances 0.000 claims abstract description 5
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 21
- 125000000217 alkyl group Chemical group 0.000 claims description 18
- 229910052799 carbon Inorganic materials 0.000 claims description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 claims description 12
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- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 claims description 3
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- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 6
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- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical group O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
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- KWIUHFFTVRNATP-UHFFFAOYSA-N glycine betaine Chemical compound C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 description 4
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- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 4
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- 229920000642 polymer Polymers 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- CMXPERZAMAQXSF-UHFFFAOYSA-M sodium;1,4-bis(2-ethylhexoxy)-1,4-dioxobutane-2-sulfonate;1,8-dihydroxyanthracene-9,10-dione Chemical compound [Na+].O=C1C2=CC=CC(O)=C2C(=O)C2=C1C=CC=C2O.CCCCC(CC)COC(=O)CC(S([O-])(=O)=O)C(=O)OCC(CC)CCCC CMXPERZAMAQXSF-UHFFFAOYSA-M 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
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- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
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- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 3
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- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- JRNGUTKWMSBIBF-UHFFFAOYSA-N naphthalene-2,3-diol Chemical compound C1=CC=C2C=C(O)C(O)=CC2=C1 JRNGUTKWMSBIBF-UHFFFAOYSA-N 0.000 description 3
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Classifications
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
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- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/62—Alcohols or phenols
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- H—ELECTRICITY
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- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/22—Di-epoxy compounds
- C08G59/24—Di-epoxy compounds carbocyclic
- C08G59/245—Di-epoxy compounds carbocyclic aromatic
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/62—Alcohols or phenols
- C08G59/621—Phenols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- H01L23/295—Organic, e.g. plastic containing a filler
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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Abstract
本发明提供一种薄片的制造方法,其包括:准备半导体封装用树脂组合物的工序,和通过将所述半导体封装用树脂组合物的粉末或颗粒进行压片成型而得到薄片的工序;所述半导体封装用树脂组合物的特征在于,是含有环氧树脂(A)、固化剂(B)和无机填充剂(C)的半导体封装用树脂组合物;环氧树脂(A)含有具有规定结构的环氧树脂(A1);固化剂(B)含有具有规定结构的酚醛树脂(B1),在利用凝胶渗透色谱的面积法的测定中,酚醛树脂(B1)总量中所含有的c=1成分的含有比例以面积百分率计为40%以上,且c≥4成分的含有比例以面积百分率计为20%以下;所述环氧树脂(A1)具有熔点,将其熔点设为TA1、将所述酚醛树脂(B1)的软化点设为TB1时,两者的温度差的绝对值|TA1-TB1|是35℃以下。
Description
本申请是中国申请号为201080011187.5的发明专利申请的分案申请(原申请的发明名称为“半导体封装用树脂组合物和半导体装置”,原申请的申请日为2010年3月2日)。
技术领域
本发明涉及薄片的制造方法。
背景技术
作为将半导体装置进行树脂封装的方法,有传递成型、压缩成型、注射成型等,对于更普遍的传递成型,通常以薄片形态向成型机供给半导体封装用树脂组合物。薄片状的半导体封装用树脂组合物可以如下得到:使用辊或挤出机等将环氧树脂、固化剂、固化促进剂、无机填充材料等进行熔融混炼,在冷却后粉碎,加压成型(压片)为圆柱或长方体形状的薄片。在半导体封装用树脂组合物的量产工序中,使用单冲式或旋转式的压片机连续进行薄片成型,但此时,有时引起薄片的断裂或缺损、或者树脂组合物附着在压片机内的成型模具内表面而发生薄片表面成为粗糙状态的外观不良等的不良情况。产生断裂或缺损的薄片在封装成型工序中导致传送不良或未填充不良,外观不良有时成为输送中薄片断裂、缺损的原因。作为上述断裂、缺损、外观不良的降低方法,例如提出了使压片机内的成型模具的表面粗糙度最优化、控制环境温度或模具温度的方法等(例如,参照专利文献1、专利文献2、专利文献3)。
另一方面,以近年来电子器件的小型化、轻质化、高性能化的市场动向为背景,半导体元件的高集成化逐年发展,贴装方式也逐渐由插件贴装向表面贴装转变。半导体封装形式出现了以表面贴装型的QFP(四侧引脚扁平封装,QuadFlatPackage)为代表的小型、轻质且能与多引脚化对应的类型,还出现了多引脚化、金属配线的窄间距化、进而在1个封装内层叠芯片的结构等。在这样的半导体装置中,由于树脂封装部分的壁厚薄且金属线密度增大,所以存在比以往的半导体装置容易产生未填充或中空、金属线偏移(ワイヤー流れ)等封装成型工序中的成型不良的趋势。因此,出于提高流动特性的目的,通常做法是环氧树脂以及固化剂使用低分子量的物质或结晶性的物质。
但是,在配合低分子量或结晶性的环氧树脂或固化剂时,树脂组合物的流动性提升,成型成品率提高,但在薄片压片成型工序中容易发生断裂、缺损、外观不良,即使以上述的压片法也无法充分改善薄片成型性,有时无法兼顾封装成型性和薄片成型性。
现有技术文献
专利文献
专利文献1:日本专利第2551548号公报
专利文献2:日本特开平8-52734号公报
专利文献3:日本特开平10-175210号公报
发明内容
本发明提供不损失薄片压片成品率且封装成型时的流动性、成型性优异的半导体封装用树脂组合物以及使用其的半导体装置。
本发明的半导体封装用树脂组合物,其特征在于,是含有环氧树脂(A)、固化剂(B)和无机填充剂(C)的半导体封装用树脂组合物,
所述环氧树脂(A)含有具有下述通式(1)表示的结构的环氧树脂(A1),
(其中,在上述通式(1)中,R1和R3是碳原子数1~5的烃基,相互之间可以相同也可以不同;R2表示直接键合、碳原子数1~5的烃基、-S-、-O-中的任一种;a和b是0~4的整数,相互之间可以相同也可以不同。)
所述固化剂(B)含有下述通式(2)表示的酚醛树脂(B1),在利用凝胶渗透色谱的面积法的测定中,通式(2)表示的酚醛树脂(B1)总量中所含有的c=1成分的含有比例以面积百分率计为40%以上,且c≥4成分的含有比例以面积百分率计为20%以下。
(其中,在上述通式(2)中,c是0~20的整数。)
本发明的半导体封装用树脂组合物可以是:所述酚醛树脂(B1),在利用凝胶渗透色谱的面积法的测定中,所述通式(2)表示的酚醛树脂(B1)总量中所含有的c=0成分的含有比例以面积百分率计为16%以下。
本发明的半导体封装用树脂组合物可以是:所述环氧树脂(A1)是将选自烷基取代或非取代的联苯酚、双酚A、双酚F、双酚S、双酚A/D、氧代双苯酚中的酚化合物进行二缩水甘油醚化而形成的结晶性环氧树脂。
本发明的半导体封装用树脂组合物可以是:所述环氧树脂(A1)具有熔点,将其熔点设为TA1、将所述酚醛树脂(B1)的软化点设为TB1时,两者的温度差的绝对值|TA1-TB1|是35℃以下。
本发明的半导体封装用树脂组合物可以是:所述半导体封装用树脂组合物用于以薄片状采用传递成型法将半导体元件封装。
本发明的半导体装置,其特征在于,用上述半导体封装用树脂组合物的固化物将半导体元件封装而得到。
根据本发明,可以得到不损失薄片成型性且封装成型时的流动性、成型性优异的半导体封装用树脂组合物。
附图说明
上述目的、以及其它目的、特征和优点可通过以下所述的优选实施方式、以及附随的以下附图来进一步明确。
[图1]是对使用本发明的半导体封装用树脂组合物的半导体装置的一例显示出截面结构的图。
[图2]是对使用本发明的半导体封装用树脂组合物的单面封装型半导体装置的一例显示出截面结构的图。
[图3]是固化剂1和固化剂2的GPC图。
[图4]是固化剂3的GPC图。
[图5]是固化剂4的GPC图。
[图6]是固化剂5的GPC图。
具体实施方式
本发明涉及含有环氧树脂(A)、固化剂(B)和无机填充剂(C)的半导体封装用树脂组合物,所述环氧树脂(A)含有具有通式(1)表示的结构的环氧树脂(A1),所述固化剂(B)含有通式(2)表示的酚醛树脂(B1),在利用凝胶渗透色谱的面积法的测定中,通式(2)表示的酚醛树脂(B1)总量中所含的c=1成分的含有比例以面积百分率计为40%以上,且c≥4成分的含有比例以面积百分率计为20%以下,由此可得到薄片成型性和封装成型性的平衡优异的半导体封装用树脂组合物。以下,详细地说明本发明。
首先,对半导体封装用树脂组合物进行说明。在本发明的半导体封装用树脂组合物中,使用具有下述通式(1)表示的结构的环氧树脂(A1)作为环氧树脂(A)。在通式(1)中,取代基R1和R3是碳原子数1~5的烃基,相互之间可以相同也可以不同,R2是直接键合、碳原子数1~5的烃基、-S-、-O-中的任一种,a和b是0~4的整数,相互之间可以相同也可以不同。具有通式(1)表示的结构的环氧树脂(A1)由于分子量小,所以熔融粘度低,可以体现良好的流动性。作为这样的环氧树脂,例如可举出烷基取代或非取代的联苯酚、双酚A、双酚F、双酚S、双酚A/D、氧代双苯酚等的二缩水甘油醚化合物,作为市售品,可举出新日铁化学(株)制YSLV-80XY(四甲基双酚F型环氧树脂)、同公司YSLV-120TE(下述式(3)表示的烷基取代型双酚S型环氧树脂)、JapanEpoxyResin制YX4000H(四甲基联苯酚的环氧树脂)、JapanEpoxyResin制YL6810(双酚A型环氧树脂)等。
(其中,在上述通式(1)中,R1和R3是碳原子数1~5的烃基,相互之间可以相同也可以不同;R2表示直接键合、碳原子数1~5的烃基、-S-、-O-中的任一种;a和b是0~4的整数,相互之间可以相同也可以不同。)
具有通式(1)表示的结构的环氧树脂(A1)只要是上述结构,则没有特别限定,但具有熔点,优选其熔点是40℃以上,更优选是45℃以上。如果熔点的下限值在上述范围内,则在环氧树脂原料的输送或保存中很难发生结块,很少担心作业性受损。另外,对熔点的上限值也没有特别限定,但优选在140℃以下,更优选在125℃以下。如果熔点的上限值在上述范围内,则很少担心会引起在熔融混炼中因树脂的熔融不足而导致固化性不良等的不良情况。
在本发明的半导体封装用树脂组合物中,可以在不损失通过使用具有通式(1)表示结构的环氧树脂(A1)带来的效果的范围内并用其它环氧树脂。作为能够并用的环氧树脂,可举出苯酚线型酚醛环氧树脂、甲酚线型酚醛环氧树脂等酚醛清漆型环氧树脂;三苯酚甲烷型环氧树脂、烷基改性三苯酚甲烷型环氧树脂等多官能环氧树脂;具有亚苯基骨架的苯酚芳烷基型环氧树脂、萘酚芳烷基型环氧树脂,具有亚联苯基骨架的苯酚芳烷基型环氧树脂,具有亚苯基骨架的萘酚芳烷基型环氧树脂等芳烷基型环氧树脂;二羟基萘型环氧树脂、将萘酚或二羟基萘的二聚体进行缩水甘油醚化而得到的环氧树脂等萘酚型环氧树脂;三缩水甘油基异氰脲酸酯、单烯丙基二缩水甘油基异氰脲酸酯等含有三嗪核的环氧树脂;二环戊二烯改性苯酚型环氧树脂等有桥环状烃化合物改性苯酚型环氧树脂、甲氧基萘型环氧树脂、二氢蒽醌型环氧树脂。如果考虑作为半导体封装用树脂组合物的耐湿可靠性,优选作为离子性杂质的Na+离子、Cl-离子极少的环氧树脂,从固化性方面考虑,作为环氧当量,优选100g/eq~500g/eq。
作为并用其它环氧树脂时的具有通式(1)表示的结构的环氧树脂(A1)的配合比例,优选相对于总环氧树脂(A)为25质量%以上,更优选45质量%以上,特别优选60质量%以上。如果配合比例在上述范围内,则可得到提高流动性的效果。
对于环氧树脂(A)整体的配合比例的下限值,没有特别限定,但在全部半导体封装用树脂组合物中,优选是2质量%以上,更优选是4质量%以上。如果配合比例的下限值在上述范围内,则很少担心会引起流动性的下降等。另外,对于环氧树脂(A)整体的配合比例的上限值,也没有特别限定,但在全部半导体封装用树脂组合物中,优选是15质量%以下,更优选是13质量%以下。如果配合比例的上限值在上述范围内,则很少担心会引起耐焊接性的下降等。
本发明的半导体封装用树脂组合物,作为固化剂(B)使用具有如下特性的物质:含有下述通式(2)表示的酚醛树脂(B1),在利用凝胶渗透色谱的面积法的测定中,相对于通式(2)表示的酚醛树脂(B1)总量,c=1的成分的含有比例以面积百分率计为40%以上,且c≥4成分的含有比例以面积百分率计为20%以下。另外,优选通式(2)表示的酚醛树脂(B1)总量中所含的c=0成分的含有比例以面积百分率计为16%以下。其中,所谓通式(2)表示的酚醛树脂(B1)的总量是指不论c=1成分、c≥4成分、c=0成分的含有比例如何,均为半导体封装用树脂组合物中所含有的1种或多种的通式(2)表示的酚醛树脂的合计。在通式(2)表示的酚醛树脂(B1)中,通式(2)的c=0的成分虽然是低粘度,但因为一分子中的羟基为2个,所以特别是在与环氧树脂(A1)这样的二官能环氧树脂进行熔融混炼时,分子之间的凝聚力不充分,所以薄片的强度有可能下降,而且固化后也难以得到交联结构。c=1的成分是仅次于c=0的低粘度,且一分子内有3个羟基,所以熔融混炼容易,在树脂组合物状态下呈现与环氧树脂(A1)这样的二官能环氧树脂的良好的凝聚力,固化后也可以形成立体交联结构。伴随着c的数目增加,粘度升高,变得缺乏熔融混炼性、流动性,尤其是如果重复单元为c≥4,则进而由于本身的立体障碍而存在与环氧树脂(A1)这样的二官能环氧树脂的反应性不良的趋势。本发明的半导体封装用树脂组合物,对于通式(2)表示的酚醛树脂(B1)总量中所含的c=1成分的含有比例的下限值,优选以面积百分率计为40%以上,更优选为50%以上,特别优选为55%以上。如果c=1成分的含有比例的下限值在上述范围内,则很少担心会引起薄片压片成品率的下降,并且可以提高树脂组合物的流动性。对于c=1成分的含有比例的上限值,没有特别限定,但优选以面积百分率计为85%以下,更优选为80%以下。如果c=1成分的上限值在上述范围内,则很少担心通式(2)表示的酚醛树脂(B1)的合成收率过低所导致的高成本化。对于通式(2)表示的酚醛树脂(B1)总量中所含的c≥4成分的含有比例的上限值,没有特别限定,但优选以面积百分率计为20%以下,更优选为15%以下。如果c≥4成分的含有比例的上限值在上述范围内,则很少担心会引起流动性的下降。对于通式(2)表示的酚醛树脂(B1)总量中所含的c=0成分的含有比例的上限值,没有特别限定,但优选以面积百分率计为16%以下,更优选为12%以下。如果c=0成分的含有比例的上限值在上述范围内,则很少担心会引起薄片成型时的断裂、缺损或外观不良。应予说明,上述各成分的含有比例可以通过后述的利用凝胶渗透色谱的面积法的测定而求出。
(其中,在上述通式(2)中,c是0~20的整数。)
本发明中,只要通式(2)表示的酚醛树脂(B1)是上述结构,且c=1成分、c≥4成分的含有比例在上述范围,则没有特别限定,但优选通式(2)表示的酚醛树脂(B1)的软化点的下限值在50℃以上、更优选在60℃以上。如果软化点的下限值在上述范围内,则在环氧树脂原料的输送或保存中很难发生结块、很少担心作业性受损。另外,对于软化点的上限值,没有特别限定,优选是140℃以下,更优选是125℃以下。如果软化点的上限值在上述范围内,则很少担心会引起在熔融混炼中因树脂的熔融不足而导致固化性不良等的不良情况。
通式(2)表示的酚醛树脂(B1)中的通式(2)的c=1成分的含有比例、c≥4成分的含有比例以及c=0成分的含有比例可以如下地算出。进行通式(2)表示的酚醛树脂(B1)的凝胶渗透色谱(GPC)测定,求出与检测到的峰对应的各成分的PS换算分子量,由检测到的峰面积之比可以算出与检测到的峰对应的各成分的含有比例(面积百分率)。
本发明的凝胶渗透色谱(GPC)测定如下进行。GPC装置由泵、进样器、保护柱、色谱柱和检测器构成,溶剂使用四氢呋喃(THF)。按泵的流速为0.5ml/分钟进行测定。在比这高的流速下,由于目标分子量的检测精度变低,因而不优选。另外,为了以上述流速精度良好地进行测定,需要使用流量精度良好的泵,优选流量精度是0.10%以下。保护柱使用市售的保护柱(例如,TOSOH(株)制TSKGUARDCOLUMNHHR-L:直径6.0mm、管长40mm),色谱柱是将多根市售的聚苯乙烯凝胶色谱柱(TOSOH(株)制TSK-GELGMHHR-L:直径7.8mm、管长30mm)串联连接。检测器使用差示折射率计(RI检测器。例如、WATERS公司制差示折射率(RI)检测器W2414)。在测定前,预先使保护柱、色谱柱和检测器内部稳定在40℃。对于试样,准备调整到浓度为3~4mg/ml的环氧树脂(A)的THF溶液,通过进样器将其注入约50~150μl进行测定。在试样的解析中,使用由单分散聚苯乙烯(以下记为PS)标准试样制成的校正曲线。校正曲线使用将PS的分子量的对数值和PS的峰检测时间(保留时间)绘制曲线、进行3次回归而成的曲线。作为制作校正曲线用的标准PS试样,可使用昭和电工(株)制ShodexStandardSL-105系列的商品号S-1.0(峰分子量1060)、S-1.3(峰分子量1310)、S-2.0(峰分子量1990)、S-3.0(峰分子量2970)、S-4.5(峰分子量4490)、S-5.0(峰分子量5030)、S-6.9(峰分子量6930)、S-11(峰分子量10700)、S-20(峰分子量19900)。
在本发明中,只要酚醛树脂(B1)由通式(2)的结构表示,且c=1成分、c≥4成分的量是上述范围,则对聚合的方法、成分量的调整方法没有特别限制。作为聚合方法的例子,可举出在酸催化剂下使苯酚和甲醛缩聚后、蒸馏除去残留单体和水分的方法,但也可以使用市售的线型酚醛树脂。另外,为了调整通式(2)的c=1成分、c≥4成分、c=0成分的量,可使用后述的蒸馏、水洗、萃取、柱色谱分离、或混合规定分子量分布的线型酚醛树脂等的方法。
上述苯酚可使用市售的苯酚单体或将苯酚进行溶剂稀释而得到的溶液等,但从成本方面考虑优选工业用苯酚。上述甲醛可使用多聚甲醛、三烷、甲醛水溶液等作为甲醛产生源的物质,或者这些甲醛的溶液。通常,从作业性、成本方面考虑优选使用甲醛水溶液。另外,除此之外,作为合成原料,可以使用预先使用苯酚和醛在酸催化剂下进行缩聚而成的聚合物,它们的蒸馏物、萃取物、分子量分级物、釜残物,另外也可以并用市售的双酚F、线型酚醛树脂。
作为上述的酸催化剂,可以使用通常在线型酚醛树脂合成中公知的酸催化剂。例如可使用硫酸、盐酸、磷酸、亚磷酸等无机酸,或者草酸、甲酸、有机膦酸、对甲苯磺酸、二甲基硫酸等有机酸,乙酸锌、乙酸镍等,可以单独使用它们或者也可以组合2个以上使用。其中,由于能够容易地从酚醛树脂中除去催化剂,因而优选草酸、盐酸。
对于苯酚和甲醛的缩聚中的苯酚(P)和甲醛(F)的反应摩尔比(F/P摩尔比)以及反应温度,没有特别限制,但通常优选在F/P摩尔比是0.05~0.7摩尔的范围、反应温度是50~150℃的范围进行反应。其中,通过降低反应摩尔比(F/P摩尔比)或反应温度,可以减少平均分子量、将c≥4成分的量调低。
作为上述的利用蒸馏的分子量调整方法,没有特别限制,例如可举出常压蒸馏、减压蒸馏、水蒸气蒸馏等方法。优选蒸馏操作的温度是50℃~250℃的蒸馏操作,其中,在蒸馏温度小于50℃时,蒸馏的效率变差,从生产率的观点不优选,在大于250℃时,由于发生线型酚醛树脂的分解和高分子量化,因而不优选。具体而言,可以通过100~150℃的常压蒸馏效率良好地除去水分,通过以150~200℃、5000Pa的条件进行减压蒸馏而效率良好地除去苯酚单体成分,通过以200~250℃、5000Pa的条件进行减压水蒸气蒸馏而效率良好地除去通式(2)的c=0成分,通过将它们适当组合,可以提高通式(2)的c=1成分的含有比例。
作为上述的利用水洗的分子量调整方法,具体而言,在线型酚醛树脂或者用有机溶剂溶解线型酚醛树脂而得到的溶液中加入水,在常压或加压下、在20~150℃的温度搅拌后,用静置或离心分离使水相和有机相分离,将水相除去至体系外,由此可以减少溶解在水相中的低分子量成分、主要是苯酚单体成分和通式(2)的c=0成分。通过这些操作,结果可以调整通式(2)的c=1成分的量。
作为上述的利用萃取的分子量调整方法,将甲苯、二甲苯等对酚醛树脂溶解性低的非极性溶剂添加到线型酚醛树脂、线型酚醛树脂水溶液、或者溶解在醇等极性溶剂中的酚醛树脂中,在常压或加压下、在20~150℃的温度搅拌,然后以静置或离心分离使非极性溶剂相和其它成分相分离,将非极性溶剂相除去至体系外,由此可以除去溶解在非极性溶剂相中的高分子量成分。通过进行这些操作,结果可以减少、调整c≥4成分的量。
作为上述的利用分离色谱柱的分子量调整方法,在分液漏斗、填充有聚苯乙烯凝胶的分离色谱柱上串联连接折射率(RI)检测器、分液收集用阀,经分液漏斗供给线型酚醛树脂的四氢呋喃溶液后,供给四氢呋喃洗脱液,监测折射率(RI)图,收集从检测到规定的峰开始到消失为止之间的提取溶液,由此可以获取任意的分子量成分。
作为上述的利用混合的分子量调整方法,没有特别限制,通过使用如下产物,即,将使用苯酚和甲醛在酸催化剂下进行缩聚而得的聚合物、市售的线型酚醛树脂进行蒸馏、萃取、分馏(缶出)、分离等操作后,在熔点以上的温度将这些多种树脂熔融混合或者溶解于溶剂后混合并减压除去溶剂而得到的产物,也可以调整式(2)的c=1成分、c≥4成分、c=0成分的量。此时,可以是个别的单独树脂包含c=1成分、c≥4成分的量在上述范围外的物质的情况。
在本发明的半导体封装用树脂组合物中,可以在不损失使用酚醛树脂(B1)所产生的效果的范围内并用其它固化剂。作为能够并用的固化剂,例如可举出加聚型的固化剂、催化型的固化剂、缩合型的固化剂等。作为加聚型的固化剂,例如可举出包含二亚乙基三胺(DETA)、三亚乙基四胺(TETA)、间二甲苯二胺(MXDA)等脂肪族多胺,二氨基二苯基甲烷(DDM)、间苯二胺(MPDA)、二氨基二苯基砜(DDS)等芳香族多胺,以及双氰胺(DICY)、有机酸二酰肼等的多胺化合物;包含六氢邻苯二甲酸酐(HHPA)、甲基四氢邻苯二甲酸酐(MTHPA)等脂环族酸酐,偏苯三酸酐(TMA)、均苯四甲酸二酐(PMDA)、二苯甲酮四羧酸二酐(BTDA)等芳香族酸酐等的酸酐;苯酚芳烷基树脂、二环戊二烯改性酚醛树脂等酚醛树脂系化合物;多硫化合物、硫酯、硫醚等聚硫醇化合物;异氰酸酯预聚物、嵌段化异氰酸酯等异氰酸酯化合物;含羧酸聚酯树脂等有机酸类等。作为在本发明的半导体封装用树脂组合物中能够并用的固化剂,从耐燃性、耐湿性、电气特性、固化性、保存稳定性等平衡的方面考虑,优选酚醛树脂系固化剂。酚醛树脂系固化剂是在一分子内具有2个以上酚羟基的单体、低聚物、聚合物全部,其分子量、分子结构没有特别限定,例如可举出甲酚线型酚醛树脂等酚醛清漆树脂;三苯酚甲烷型酚醛树脂等多官能型酚醛树脂;萜改性酚醛树脂、二环戊二烯改性酚醛树脂等改性酚醛树脂;具有亚苯基骨架和/或亚联苯基骨架的苯酚芳烷基树脂、具有亚苯基和/或亚联苯基骨架的萘酚芳烷基树脂等芳烷基型树脂;双酚A、双酚AD等双酚化合物等。它们之中,从固化性方面考虑,优选羟基当量是90g/eq~250g/eq的化合物。
对于固化剂(B)整体的配合比例的下限值,没有特别限定,在全部半导体封装用树脂组合物中,优选是0.8质量%以上,更优选是1.5质量%以上。如果配合比例的下限值在上述范围内,则可得到充分的流动性。另外,对于固化剂(B)整体的配合比例的上限值,也没有特别限定,在全部半导体封装用树脂组合物中,优选是10质量%以下,更优选是8质量%以下。如果配合比例的上限值在上述范围内,则可得到良好的耐焊接性。
另外,在使用酚醛树脂系固化剂作为固化剂(B)时,作为环氧树脂整体和酚醛树脂系固化剂整体的配合比例,优选环氧树脂(A)整体的环氧基数(EP)和酚醛树脂系固化剂整体的酚羟基数(OH)的当量比(EP)/(OH)为0.8~1.3。如果当量比在该范围,则在半导体封装用树脂组合物成型时可得到充分的固化性。另外,如果当量比在该范围,则可得到树脂固化物的良好的物性。
在本发明的半导体封装用树脂组合物中,环氧树脂(A1)具有熔点,将其熔点设为TA1、将通式(2)表示的酚醛树脂(B1)的软化点设为TB1时,优选两者的温度差的绝对值|TA1-TB1|是35℃以下,更优选是30℃以下。如果环氧树脂(A1)的熔点和通式(2)表示的酚醛树脂(B1)的软化点的温度差在上述范围,则可得到良好的薄片成型性。通过减小上述的温度差来提高薄片成型性、成品率的原因虽然不明,但推测是在树脂组合物的熔融混炼工序中环氧树脂(A1)与通式(2)表示的酚醛树脂(B1)能够迅速地熔融混合、结果提高了冷却后的环氧树脂和固化剂的凝聚力。另一方面,如果结晶性环氧树脂的熔点过高,则熔融无法迅速进行、与固化剂成分的混合不充分,如果结晶性环氧树脂的熔点过低,则虽然比其它成分容易在低温熔融,但在加热混合中没有被充分地分配而与固化剂的混合、凝聚力变得不足。另外,对于与环氧树脂(A1)和酚醛树脂(B1)并用的其它环氧树脂和固化剂的软化点或熔点的下限值,优选是50℃以上,更优选是60℃以上。另外,对于与环氧树脂(A1)和酚醛树脂(B1)并用的其它环氧树脂和固化剂的软化点或熔点的上限值,没有特别限定,但优选140℃以下,更优选是125℃以下。如果与环氧树脂(A1)和酚醛树脂(B1)并用的其它环氧树脂和固化剂的软化点或熔点在上述范围内,则很少担心会引起在熔融混炼中因树脂的熔融不足而导致薄片的外观不良、缺损等的不良情况。
在本发明的半导体封装用树脂组合物中,可以进一步使用(C)无机填充剂。作为能够在本发明的半导体封装用树脂组合物中使用的无机填充剂(C),可使用通常在半导体封装用树脂组合物中使用的物质,例如可举出熔融二氧化硅、球状二氧化硅、结晶二氧化硅、氧化铝、氮化硅、氮化铝等。作为无机填充剂(C)的粒径,如果考虑对模具空腔的填充性,则优选0.01μm~150μm。
作为无机填充剂(C)的含有比例的下限值,优选是半导体封装用树脂组合物整体的75质量%以上,更优选是80质量%以上,特别优选是83质量%以上。如果无机填充剂(C)的含有比例的下限值在上述范围内,则半导体封装用树脂组合物可得到良好的薄片成型性,作为其固化物物性,吸湿量不会增加、强度不会下降,可得到良好的耐焊接破裂性。另外,作为无机填充剂(C)的含有比例的上限值,优选是半导体封装用树脂组合物整体的93质量%以下,更优选是91质量%以下,特别优选是90质量%以下。如果无机填充剂(C)的含有比例的上限值在上述范围内,则不会损失流动性,可得到良好的成型性。
在本发明的半导体封装用树脂组合物中,可以进一步使用固化促进剂(D)。固化促进剂(D)只要是促进环氧树脂的环氧基和含有2个以上酚羟基的化合物的酚羟基的反应的物质即可,可使用通常的半导体封装用树脂组合物中使用的物质。作为具体例,可举出有机膦、四取代化合物、磷酸酯甜菜碱(ホスホベタイン)化合物、膦化合物和醌化合物的加成物、化合物和硅烷化合物的加成物等含磷原子化合物;1,8-二氮杂双环(5,4,0)十一碳烯-7、苄基二甲基胺、2-甲基咪唑等含氮原子化合物。它们之中,优选含磷原子化合物,从流动性和固化性平衡的观点出发,更优选四取代化合物、磷酸酯甜菜碱化合物、膦化合物和醌化合物的加成物、化合物和硅烷化合物的加成物等具有潜在性的催化剂。如果考虑流动性等方面,则特别优选四取代化合物,另外,如果考虑半导体封装用树脂组合物的固化物的热时低弹性模量,则特别优选磷酸酯甜菜碱化合物、膦化合物和醌化合物的加成物,另外,如果考虑潜在的固化性等方面,则特别优选化合物和硅烷化合物的加成物。
作为能够在本发明的半导体封装用树脂组合物中使用的有机膦,例如可举出乙基膦、苯基膦等伯膦;二甲基膦、二苯基膦等仲膦;三甲基膦、三乙基膦、三丁基膦、三苯基膦等叔膦。
作为能够在本发明的半导体封装用树脂组合物中使用的四取代化合物,例如可举出下述通式(4)表示的化合物等。
(其中,在上述通式(4)中,P表示磷原子。R4、R5、R6和R7表示芳香族基团或烷基。A表示芳香环上具有至少1个选自羟基、羧基、硫醇基中的任意官能团的芳香族有机酸的阴离子。AH表示芳香环上具有至少1个选自羟基、羧基、硫醇基中的任意官能团的芳香族有机酸。x、y是1~3的整数,z是0~3的整数,且x=y。)
通式(4)表示的化合物例如可以如下地得到,但不限于此。首先,将四取代卤化芳香族有机酸和碱混到有机溶剂中、混合均匀,在该溶液体系内产生芳香族有机酸阴离子。接着加水,则可以使通式(4)表示的化合物沉淀。在通式(4)表示的化合物中,优选与磷原子结合的R4、R5、R6和R7是苯基,且AH是芳香环具有羟基的化合物、即酚类,且A是该酚类的阴离子。
作为能够在本发明的半导体封装用树脂组合物中使用的磷酸酯甜菜碱化合物,可举出例如下述通式(5)表示的化合物等。
(其中,在上述通式(5)中,X1表示碳原子数1~3的烷基、Y1表示羟基。f是0~5的整数,g是0~4的整数。)
通式(5)表示的化合物例如可以如下地得到。首先,使叔膦即三芳香族取代膦和重氮盐接触,经过使三芳香族取代膦和重氮盐具有的重氮基发生置换的工序而得到。但是不限于此。
作为能够在本发明的半导体封装用树脂组合物中使用的膦化合物和醌化合物的加成物,例如可举出下述通式(6)表示的化合物等。
(其中,在上述通式(6)中,P表示磷原子。R8、R9和R10表示碳原子数1~12的烷基或碳原子数6~12的芳基,相互可以相同也可以不同。R11、R12和R13表示氢原子或碳原子数1~12的烃基,相互可以相同也可以不同,R11和R12可以结合形成环状结构。)
作为膦化合物和醌化合物的加成物所用到的膦化合物,例如优选三苯基膦、三(烷基苯基)膦、三(烷氧基苯基)膦、三萘基膦、三(苄基)膦等芳香环上无取代或存在烷基、烷氧基等取代基的化合物,作为烷基、烷氧基等取代基,可举出具有1~6碳原子数的取代基。从易于获得的观点出发,优选三苯基膦。
另外,作为膦化合物和醌化合物的加成物所用到的醌化合物,可举出邻苯醌、对苯醌、蒽醌类,其中,从保存稳定性考虑优选对苯醌。
作为膦化合物和醌化合物的加成物的制造方法,可以使有机叔膦和苯醌类在能够溶解这两者的溶剂中接触、混合从而得到加成物。作为溶剂,在丙酮、甲乙酮等酮类中对加成物的溶解性低的即可。但是不限于此。
在通式(6)表示的化合物中,与磷原子结合的R8、R9和R10是苯基且R11、R12和R13是氢原子的化合物、即使1,4-苯醌和三苯基膦加成而得的化合物,从降低半导体封装用树脂组合物的固化物的热时弹性模量方面考虑是优选的。
作为能够在本发明的半导体封装用树脂组合物中使用的化合物和硅烷化合物的加成物,可举出例如下述通式(7)表示的化合物等。
(其中,在上述通式(7)中,P表示磷原子,Si表示硅原子。R14、R15、R16和R17各自表示具有芳香环或杂环的有机基团、或脂肪族基团,相互可以相同也可以不同。式中X2是与基团Y2和Y3结合的有机基团。式中X3是与基团Y4和Y5结合的有机基团。Y2和Y3表示供质子性基团释放质子而形成的基团,同一分子内的基团Y2和Y3与硅原子结合形成螯合结构。Y4和Y5表示供质子性基团释放质子而形成的基团,同一分子内的基团Y4和Y5与硅原子结合形成螯合结构。X2和X3相互可以相同也可以不同,Y2、Y3、Y4和Y5相互可以相同也可以不同。Z1是具有芳香环或杂环的有机基团、或脂肪族基团。)
在通式(7)中,作为R14、R15、R16和R17,例如可举出苯基、甲基苯基、甲氧基苯基、羟基苯基、萘基、羟基萘基、苄基、甲基、乙基、正丁基、正辛基和环己基等,它们之中,更优选苯基、甲基苯基、甲氧基苯基、羟基苯基、羟基萘基等具有取代基的芳基或无取代的芳基。
另外,在通式(7)中,X2是与Y2和Y3结合的有机基团。同样,X3是与基团Y4和Y5结合的有机基团。Y2和Y3是供质子性基团释放质子而形成的基团,同一分子内的基团Y2和Y3与硅原子结合形成螯合结构。同样,Y4和Y5是供质子性基团释放质子而形成的基团,同一分子内的基团Y4和Y5与硅原子结合形成螯合结构。基团X2和X3相互可以相同也可以不同,基团Y2、Y3、Y4和Y5相互可以相同也可以不同。这种通式(7)中的-Y2-X2-Y3-、和-Y4-X3-Y5-表示的基团是由质子供体释放2个质子而形成的基团构成的,作为质子供体,例如可举出儿茶酚、焦棓酚、1,2-二羟基萘、2,3-二羟基萘、2,2'-联苯酚、1,1'-联-2-萘酚、水杨酸、1-羟基-2-萘甲酸、3-羟基-2-萘甲酸、氯冉酸、单宁酸、2-羟基苄基醇、1,2-环己烷二醇、1,2-丙烷二醇以及甘油等,它们之中,更优选儿茶酚、1,2-二羟基萘、2,3-二羟基萘。
另外,通式(7)中的Z1表示具有芳香环或杂环的有机基团或者脂肪族基团,作为它们的具体例,可举出甲基、乙基、丙基、丁基、己基和辛基等脂肪族烃基,苯基、苄基、萘基和联苯基等芳香族烃基,缩水甘油氧基丙基、巯基丙基、氨基丙基以及乙烯基等反应性取代基等,它们之中,从热稳定性方面考虑更优选甲基、乙基、苯基、萘基和联苯基。
作为化合物和硅烷化合物的加成物的制造方法,如下:在装入甲醇的烧瓶中,加入苯基三甲氧基硅烷等硅烷化合物、2,3-二羟基萘等质子供体并溶解,接着在室温搅拌下滴加甲醇钠-甲醇溶液。进一步,在室温搅拌下向其中滴加预先准备好的使四苯基溴化等四取代卤化溶解于甲醇而成的溶液,析出结晶。将析出的结晶过滤、水洗、真空干燥,则得到化合物和硅烷化合物的加成物。但是,不限于此。
更优选可用于本发明的半导体封装用树脂组合物的固化促进剂(D)的配合比例在总树脂组合物中为0.1质量%~1质量%。如果固化促进剂(D)的配合比例在上述范围内,则可得到充分的固化性。另外,如果固化促进剂(D)的配合比例在上述范围内,则可得到充分的流动性。
在本发明中,还可使用构成芳香环的2个以上相邻碳原子上分别结合有羟基而成的化合物(E)。通过使用构成芳香环的2个以上相邻碳原子上分别结合有羟基而成的化合物(E)(以下,也称为“化合物(E)”),即使使用不具有潜在性的含磷原子固化促进剂作为促进环氧树脂(A)和固化剂(B)的交联反应的固化促进剂,也能够抑制树脂组合物在熔融混炼中的反应,可以稳定地得到半导体封装用树脂组合物。另外,化合物(E)也具有降低半导体封装用树脂组合物的熔融粘度、提高流动性的效果。作为化合物(E),可使用下述通式(8)表示的单环化合物或下述通式(9)表示的多环化合物等,这些化合物可以具有羟基以外的取代基。
(其中,在上述通式(8)中,R18、R22的某一方是羟基,当一方是羟基时另一方是氢原子、羟基或羟基以外的取代基。R19、R20和R21是氢原子、羟基或羟基以外的取代基。)
(其中,在上述通式(9)中,R23、R29的某一方是羟基,当一方是羟基时另一方是氢原子、羟基或羟基以外的取代基。R24、R25、R26、R27和R28是氢原子、羟基或羟基以外的取代基。)
作为通式(8)表示的单环化合物的具体例,例如可举出儿茶酚、焦棓酚、没食子酸、没食子酸酯或它们的衍生物。另外,作为通式(9)表示的多环化合物的具体例,例如可举出1,2-二羟基萘、2,3-二羟基萘以及它们的衍生物。它们之中,从流动性和固化性的控制的容易性方面看,优选构成芳香环的2个相邻碳原子上分别结合有羟基而成的化合物。另外,在考虑混炼工序中的挥发时,更优选母核是低挥发性且称量稳定性高的萘环的化合物。此时,具体而言,例如可以使化合物(E)为1,2-二羟基萘、2,3-二羟基萘及其衍生物等具有萘环的化合物。这些化合物(E)可以单独使用1种也可以并用2种以上。
优选所述化合物(E)的配合比例在全部半导体封装用树脂组合物中为0.01质量%~1质量%、更优选为0.03质量%~0.8质量%,特别优选为0.05质量%~0.5质量%。如果化合物(E)的配合比例的下限值在上述范围内,则可得到半导体封装用树脂组合物的充分的低粘度化和流动性提高效果。另外,如果化合物(E)的配合比例的上限值在上述范围内,则很少担心会引起半导体封装用树脂组合物的固化性的下降、固化物物性的下降。
在本发明的半导体封装用树脂组合物中,为了提高环氧树脂(A)和无机填充剂(C)的密合性,可以进一步添加硅烷偶联剂等密合助剂(F)。作为其例子没有特别限定,可举出环氧硅烷、氨基硅烷、脲基硅烷、巯基硅烷等,只要是在环氧树脂和无机填充剂间进行反应、提高环氧树脂和无机填充剂的界面强度的即可。另外,硅烷偶联剂通过与上述的化合物(E)并用,也可以提高使半导体封装用树脂组合物的熔融粘度降低、提高流动性等化合物(E)的效果。
更具体而言,作为环氧硅烷,例如可举出γ-环氧丙氧基丙基三乙氧基硅烷、γ-环氧丙氧基丙基三甲氧基硅烷、γ-环氧丙氧基丙基甲基二甲氧基硅烷、β-(3,4环氧环己基)乙基三甲氧基硅烷等。另外,作为氨基硅烷,例如可举出γ-氨基丙基三乙氧基硅烷、γ-氨基丙基三甲氧基硅烷、N-β-(氨基乙基)-γ-氨基丙基三甲氧基硅烷、N-β-(氨基乙基)γ-氨基丙基甲基二甲氧基硅烷、N-苯基γ-氨基丙基三乙氧基硅烷、N-苯基γ-氨基丙基三甲氧基硅烷、N-β-(氨基乙基)-γ-氨基丙基三乙氧基硅烷、N-6-(氨基己基)3-氨基丙基三甲氧基硅烷、N-3-(三甲氧基甲硅烷基丙基)-1,3-苯二甲胺(ベンゼンジメタナン)等。另外,作为脲基硅烷,例如可举出γ-脲基丙基三乙氧基硅烷、六甲基二硅氮烷等。另外,作为巯基硅烷,例如可举出γ-巯基丙基三甲氧基硅烷等。这些硅烷偶联剂可以单独使用1种也可以并用2种以上。
作为可用于本发明的半导体封装用树脂组合物的硅烷偶联剂等密合助剂(F)的配合比例,优选在全部树脂组合物中为0.01质量%~1质量%,更优选是0.05质量%~0.8质量%,特别优选是0.1质量%~0.6质量%。如果硅烷偶联剂等密合助剂(F)的配合比例在上述下限值以上,则可以在环氧树脂和无机填充剂的界面强度不下降的情况下得到半导体装置的良好的耐焊接破裂性。另外,如果硅烷偶联剂等密合助剂(F)的配合比例在上述范围内,则可以在树脂组合物的固化物的吸水性不增大的情况下得到半导体装置的良好的耐焊接破裂性。
在本发明的半导体封装用树脂组合物中,除上述成分以外,还可以适当配合炭黑、氧化铁红、氧化钛等着色剂;巴西棕榈蜡等天然蜡、聚乙烯蜡等合成蜡、硬脂酸或硬脂酸锌等高级脂肪酸及其金属盐类、或者石蜡等脱模剂;硅油、硅酮橡胶等低应力添加剂;氧化铋水合物等无机离子交换体;氢氧化铝、氢氧化镁等金属氢氧化物,硼酸锌、钼酸锌、磷腈、三氧化锑等阻燃剂等的添加剂。
本发明的半导体封装用树脂组合物的制造方法没有特别限制,例如使用混合机、喷射磨、球磨机等在常温下将配合规定量的上述成分和其它添加剂等而成的混合物均匀地粉碎、混合后,使用加热辊、捏合机或挤出机等混炼机一边将树脂组合物加温至90~120℃左右一边进行熔融、混炼,将混炼后的树脂组合物冷却、粉碎,可得到颗粒或粉末状的树脂组合物。优选树脂组合物的粉末或颗粒的粒度是5mm以下。如果大于5mm,则在压片时发生填充不良,薄片重量的偏差大。
另外,通过将得到的树脂组合物的粉末或颗粒进行压片成型,可得到薄片。作为用于压片成型的装置,可使用单冲式或多冲旋转式的压片机。薄片形状没有特别限定,但优选圆柱状。压片机的杵、臼以及环境温度没有特别限制,优选35℃以下。如果大于35℃,则担心树脂组合物由于反应而粘度上升,流动性受损。优选压片压力是400×104~3000×104Pa的范围。如果压片压力大于上述的上限值,则担心薄片压片后立刻发生破坏,如果小于下限值,则担心由于得不到充分的凝聚力而在输送中产生薄片的破坏。压片机的杵、臼的模具材质、表面处理没有特别限定,可使用公知的材质,作为表面处理的例子,例如可举出电火花加工、脱模剂的涂覆、镀覆处理、研磨等。
接着,对本发明的半导体装置进行说明。使用本发明的半导体封装用树脂组合物的固化物将半导体元件封装、制造半导体装置时,例如将搭载有半导体元件的引线框、电路基板等设置在模具空腔内后,用传递成型、压缩成型、注射成型等成型方法使半导体封装用树脂组合物成型固化即可。
作为本发明的半导体装置中所封装的半导体元件,没有特别限定,例如可举出集成电路、大规模集成电路、晶体管、晶闸管、二极管、固体摄像元件等。
作为本发明的半导体装置的形式,没有特别限定,例如可举出双列直插式封装(DIP)、带引线的塑料芯片载体(PLCC)、四侧引脚扁平封装(QFP)、薄型四侧引脚扁平封装(LQFP)、小外形封装(SOP)、J型引脚小外形封装(SOJ)、薄型小外形封装(TSOP)、薄四方扁平封装(TQFP)、带载封装(TCP)、球栅阵列(BGA)、芯片尺寸封装(CSP)等。
采用传递成型等成型方法、利用半导体封装用树脂组合物的固化物将半导体元件封装的本发明的半导体装置,直接或者在80℃~200℃左右的温度经过10分钟~10小时左右的时间使其完全固化后,搭载于电子器件等中。
图1是对使用了本发明的半导体封装用树脂组合物的半导体装置的一例显示出截面结构的图。在芯片焊盘(ダイパッド)3上,介由芯片焊接材料固化体2将半导体元件1固定。半导体元件1的电极极板(電極パッド)和引线框5之间由配线4连接。半导体元件1被半导体封装用树脂组合物的固化体6封装。
图2是对使用了本发明的树脂组合物的单面封装型的半导体装置的一例显示出截面结构的图。在基板8上,介由阻焊剂7和芯片焊接材料固化体2将半导体元件1固定。半导体元件1的电极极板和基板8上的电极极板之间通过配线4、介由阻焊剂7连接。利用封装用树脂组合物的固化体6,仅封装基板8的搭载有半导体元件1的单面侧。基板8上的电极极板与基板8上的非封装面侧的焊接球9在内部接合。
按照本发明,由于可得到不损失薄片成型性而封装成型时的流动性、成型性优异的半导体封装用树脂组合物,所以可以适合用于使用薄片状半导体封装用树脂组合物将半导体元件封装成型而得到的半导体装置,尤其是树脂封装部分的壁厚薄且金属线密度高、多引脚化、金属配线间窄间距化、或层叠多个半导体芯片的结构的半导体装置。
实施例
以下,通过实施例具体说明本发明,但本发明不受这些实施例任何限定。以下配合量是质量份。实施例、比较例中用到的成分如下所示。
另外,固化剂1~5的凝胶渗透色谱(GPC)测定在以下的条件下进行。在线型酚醛树脂1的试样20mg中加入溶剂四氢呋喃(THF)6ml并充分溶解,供给GPC测定。GPC系统使用将WATERS公司制模块W2695、TOSOH(株)制TSKGUARDCOLUMNHHR-L(直径6.0mm、管长40mm、保护柱)、TOSOH(株)制TSK-GELGMHHR-L(直径7.8mm、管长30mm、聚苯乙烯凝胶色谱柱)2根、WATERS公司制差示折射率(RI)检测器W2414串联连接而成的系统。泵的流速为0.5ml/分钟,色谱柱和差示折射率计内温度为40℃,用100μl进样器注入测定溶液进行测定。在试样的解析中,使用利用单分散聚苯乙烯(以下PS)标准试样制作的校正曲线。校正曲线使用将PS的分子量的对数值和PS的峰检测时间(保留时间)绘图、进行3次回归而成的曲线。作为制作校正曲线用的标准PS试样,使用昭和电工(株)制ShodexStandardSL-105系列的商品号S-1.0(峰分子量1060)、S-1.3(峰分子量1310)、S-2.0(峰分子量1990)、S-3.0(峰分子量2970)、S-4.5(峰分子量4490)、S-5.0(峰分子量5030)、S-6.9(峰分子量6930)、S-11(峰分子量10700)、S-20(峰分子量19900)。
(环氧树脂)
环氧树脂1:四甲基双酚F型环氧树脂(东都化成(株)制、YSLV-80XY。环氧当量190、熔点80℃。)
环氧树脂2:双酚A型环氧树脂(JapanEpoxyResin(株)制、YL6810。环氧当量172、熔点45℃。)
环氧树脂3:四甲基联苯型环氧树脂(JapanEpoxyResin(株)制、YX4000H。环氧当量185、熔点107℃。)
环氧树脂4:下述式(3)表示的环氧树脂(东都化成(株)制、YSLV-120TE。环氧当量240、熔点120℃。)
环氧树脂5:含有亚联苯基骨架的苯酚芳烷基型环氧树脂(日本化药株式会社制、NC3000、环氧当量276、软化点58℃)。
环氧树脂6:二环戊二烯型环氧树脂(大日本油墨化学工业株式会社制、HP7200L、环氧当量244、软化点56℃)。
环氧树脂7:甲氧基萘型环氧树脂(大日本油墨化学工业株式会社制、EXA7320、环氧当量251、软化点58℃)。
环氧树脂8:二氢蒽醌型环氧树脂(JapanEpoxyResin(株)制商品名YX8800、当量180、熔点110℃)
(固化剂)
固化剂1:下述通式(2)表示的线型酚醛树脂(群荣化学(株)制、LV-70S。羟基当量104、软化点67℃、c=1成分的含有比例63.8%、c≥4成分的含有比例4.4%、c=0成分的含有比例7.4%、数均分子量332)
固化剂2:下述通式(2)表示的线型酚醛树脂(三井化学(株)制、VR-9305。羟基当量104、软化点75.5℃、c=1成分的含有比例43.1%、c≥4成分的含有比例32.1%、c=0成分的含有比例7.7%、数均分子量391)
固化剂3:在具备搅拌机、温度计、冷却器的反应器中,加入苯酚1700质量份、37%福尔马林350质量份,在加入草酸17质量份后,一边将反应温度保持在95℃~105℃一边反应4小时。之后,升温至180℃,以5000Pa的减压度进行减压蒸馏来除去未反应的苯酚,然后升温至230℃,以5000Pa的减压度、水蒸气量2g/min进行水蒸气蒸馏,由此得到下述通式(2)表示的线型酚醛树脂(羟基当量104、软化点64.4℃、c=1成分的含有比例33.1%、c≥4成分的含有比例11.7%、c=0成分的含有比例19.4%、数均分子量338)。
固化剂4:下述通式(2)表示的线型酚醛树脂(住友Bakelite(株)制、PR-HF-3。羟基当量104、软化点80℃、c=1成分的含有比例14.5%、c≥4成分的含有比例46.5%、c=0成分的含有比例18.9%、数均分子量437)
固化剂5:在固化剂3的合成中,在反应后的体系中加入双酚F(试剂特级、4,4'-二羟基二苯基甲烷、和光纯药工业(株)制)80质量份,将水蒸气蒸馏温度从230℃变为215℃,除此以外,进行与固化剂3同样的合成操作,得到下述通式(2)表示的线型酚醛树脂(羟基当量104、软化点63.0℃、c=1成分的含有比例21.3%、c≥4成分的含有比例22.4%、c=0成分的含有比例32.1%、数均分子量333)。
将用凝胶渗透色谱(GPC)测定的固化剂1~5的各成分含量、数均分子量、软化点示于表1,将固化剂1和2的凝胶渗透色谱(GPC)图示于图3。将固化剂3~5的凝胶渗透色谱(GPC)图分别示于图4~6。
[表1]
表1
(无机填充剂)
无机填充剂1:将电气化学工业制熔融球状二氧化硅FB560(平均粒径30μm)100质量份、Admatechs制合成球状二氧化硅SO-C2(平均粒径0.5μm)6.5质量份、Admatechs制合成球状二氧化硅SO-C5(平均粒径30μm)7.5质量份预混合而得的物质。
固化促进剂1:下述式(10)表示的固化促进剂
(硅烷偶联剂)
硅烷偶联剂1:γ-环氧丙氧基丙基三甲氧基硅烷(信越化学工业(株)制、KBM-403。)
硅烷偶联剂2:γ-巯基丙基三甲氧基硅烷(信越化学工业(株)制、KBM-803。)
硅烷偶联剂3:N-苯基-3-氨基丙基三甲氧基硅烷(信越化学工业(株)制、KBM-573。)
(着色剂)
着色剂1:炭黑(三菱化学工业(株)制、MA600。)
(脱模剂)
脱模剂1:巴西棕榈蜡(NikkoFineProductsCo.,Ltd.,制、NikkoCarnauba、熔点83℃。)
实施例1
将以上物质通过混合机常温混合,用85~100℃的加热辊熔融混炼,使其延伸为片材状、冷却后,利用锤碎机粉碎,得到粉末状树脂组合物。使用得到的树脂组合物用以下方法进行评价。将评价结果示于表2。
螺旋流动:使用低压传递成型机(KohtakiPrecision(株)制、KTS-15),在基于EMMI-1-66的螺旋流动测定用模具中,以175℃、注入压力6.9MPa、保压时间120秒的条件注入粉末状的树脂组合物,测定流动长度。螺旋流动是流动性的参数,数值越大则流动性越良好。单位是cm。
薄片压片成型性:使用粉末成型加压机(TamagawaMachinery(株)制、S-20-A),按照薄片的成品重量15g、尺寸φ18mm×高约31mm的方式进行调整,以压片压力600Pa将树脂组合物连续压片200个。在压片后,统计外观不良、存在破损的薄片,以次品率(%)表示。接着,将良品薄片100个捆包在内衬聚乙烯袋的纸皮箱中,从30cm高度落下3次后,实施同样的外观观察,统计落下试验后的次品率(%)。
金属线偏移量的测定:使用低压传递成型机,以175℃、6.9MPa、120秒的条件,将薄片化的封装材料封装成型为金属线偏移量评价试验用的208引脚QFP封装(尺寸:28×28×2.4mmt、Cu引线框、测试元件:9×9mm、配线:Au、1.2mils、5mm)各10个,以软X射线透射装置(YXLON·International(株)制、型号PMS-160)观察所成型的208引脚QFP封装。作为金属线偏移量的计算方法,将在1个封装中偏移(变形)最大的金属线的偏移量设为(F)、将该金属线的长度设为(L),算出偏移量=F/L×100(%),将10个封装的平均值示于表2。应予说明,作为金属线偏移量的判定,小于5%是合格,5%以上是不合格。
实施例2~17、比较例1~8
按照表2、表3、表4的配合,与实施例1同样地制造树脂组合物,与实施例1同样地进行评价。将评价结果示于表2、表3、表4。应予说明,在实施例2、3中,预先制作按表2的比例配合2种固化剂、在100℃熔融混合、进一步粉碎而成的材料,再用混合机与其它原料一起常温混合,之后与实施例1同样地得到粉末状树脂组合物。另外,对于在表2中记载的实施例2、3中的酚醛树脂(B1)的软化点以及c=1成分、c≥4成分、c=0成分的含有比例,也是预先制作按表2的比例配合2种固化剂、在100℃熔融混合、进一步粉碎而成的材料,进行软化点的测定和凝胶渗透色谱(GPC)测定。
[表2]
表2
注1)对于实施例2、3的固化剂,使用按表的比例预先配合2种固化剂、在100℃熔融混合、粉碎而得的材料,实施实施例的树脂组合物制造、GPC测定、以及软化点测定。
[表3]
表3
[表4]
表4
实施例1~17是含有具有通式(1)表示的结构的环氧树脂(A1)、通式(2)表示的酚醛树脂(B1),并且在利用凝胶渗透色谱的面积法的测定中,通式(2)表示的酚醛树脂(B1)总量中所含的c=1成分的含有比例以面积百分率计为40%以上,且c≥4成分的含有比例以面积百分率计为20%以下的例子,是改变了环氧树脂(A1)的种类和/或配合比例、改变了通式(2)表示的酚醛树脂(B1)中的c=1成分、c≥4成分的含有比例的例子,均为流动性(螺旋流动)、金属线偏移、薄片成型性平衡优异的结果。
另一方面,对于尽管含有通式(2)表示的酚醛树脂(B1)、但在利用凝胶渗透色谱的面积法的测定中、通式(2)表示的酚醛树脂(B1)总量中所含的c≥4成分的含有比例以面积百分率计远大于20%的比较例1、3而言,为流动性(螺旋流动)下降、金属线偏移劣化的结果。另外,对于尽管含有通式(2)表示的酚醛树脂(B1)、但在利用凝胶渗透色谱的面积法的测定中、通式(2)表示的酚醛树脂(B1)总量中所含的c=1成分的含有比例以面积百分率计低于40%的比较例2、4而言,结果是薄片成型性变差。应予说明,比较例3也是c=1成分的含有比例低于40%,但比较例3的c≥4成分的含有比例远大于20%,因此结果是薄片成型性比较良好。另外,对于没有使用具有通式(1)表示的结构的环氧树脂(A1)的比较例5~7而言,结果是流动性(螺旋流动)下降、金属线偏移劣化。另外,对于使用了环氧树脂6(二环戊二烯型环氧树脂)的比较例6而言,结果是薄片成型也差。另外,对于尽管未使用具有通式(1)表示的结构的环氧树脂(A1)、但使用了作为结晶性环氧树脂的环氧树脂8(二氢蒽醌型环氧树脂)的比较例8而言,结果是流动性(螺旋流动)、金属线偏移良好,但薄片成型性差。
根据上述结果,仅在含有具有通式(1)表示的结构的环氧树脂(A1)、通式(2)表示的酚醛树脂(B1),且在利用凝胶渗透色谱的面积法的测定中、通式(2)表示的酚醛树脂(B1)总量中所含的c=1成分的含有比例以面积百分率计为40%以上、且c≥4成分的含有比例以面积百分率计为20%以下的情况下,可得到流动性(螺旋流动)、金属线偏移、薄片成型性的平衡优异的结果,该效果可认为是组合以下两方面而带来的协同效果,所述两个方面是:含有具有通式(1)表示的结构的环氧树脂(A1);以及含有通式(2)表示的酚醛树脂(B1),且在利用凝胶渗透色谱的面积法的测定中,通式(2)表示的酚醛树脂(B1)总量中所含的c=1成分的含有比例以面积百分率计为40%以上、且c≥4成分的含有比例以面积百分率计为20%以下。
本申请以在平成21年3月11日申请的日本专利申请特愿2009-057387为基础要求优先权,将其公开的全部内容援引于此。
Claims (3)
1.一种薄片的制造方法,包括:准备半导体封装用树脂组合物的工序,和通过将所述半导体封装用树脂组合物的粉末或颗粒进行压片成型而得到薄片的工序,
所述半导体封装用树脂组合物的特征在于,是含有环氧树脂(A)、固化剂(B)和无机填充剂(C)的半导体封装用树脂组合物,
所述环氧树脂(A)含有具有下述通式(1)表示的结构且熔点为40℃~140℃的环氧树脂(A1),
其中,在所述通式(1)中,R1和R3是碳原子数1~5的烃基,相互之间相同或不同;R2表示直接键合、碳原子数1~5的烃基、-S-、-O-中的任一种;a和b是0~4的整数,相互之间相同或不同,
所述固化剂(B)含有下述通式(2)表示的酚醛树脂(B1),在利用凝胶渗透色谱的面积法的测定中,通式(2)表示的酚醛树脂(B1)总量中所含有的c=1成分的含有比例以面积百分率计为40%以上,且c≥4成分的含有比例以面积百分率计为20%以下,
其中,在上述通式(2)中,c是0~20的整数,
所述环氧树脂(A1)具有熔点,将其熔点设为TA1、将所述酚醛树脂(B1)的软化点设为TB1时,两者的温度差的绝对值|TA1-TB1|是35℃以下。
2.如权利要求1所述的薄片的制造方法,其特征在于,所述酚醛树脂(B1)在利用凝胶渗透色谱的面积法的测定中,所述通式(2)表示的酚醛树脂(B1)总量中所含有的c=0成分的含有比例以面积百分率计为16%以下。
3.如权利要求1或2所述的薄片的制造方法,其特征在于,所述环氧树脂(A1)是将选自烷基取代或非取代的联苯酚、双酚A、双酚F、双酚S、双酚A/D、氧代双苯酚中的酚化合物进行二缩水甘油醚化而形成的结晶性环氧树脂。
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US20140128505A1 (en) * | 2011-05-13 | 2014-05-08 | Hitachi Chemical Company, Ltd. | Epoxy resin molding material for sealing and electronic component device |
JP2013007028A (ja) * | 2011-05-20 | 2013-01-10 | Nitto Denko Corp | 封止用シートおよび電子部品装置 |
CN111936540B (zh) * | 2018-03-27 | 2023-10-03 | Ube株式会社 | 酚醛树脂及其制造方法、以及环氧树脂组合物及其固化物 |
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