CN103959482B - 用于红外成像器的具有在HgCdTe上自定位的可控异质结构的P-N型二极管 - Google Patents

用于红外成像器的具有在HgCdTe上自定位的可控异质结构的P-N型二极管 Download PDF

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CN103959482B
CN103959482B CN201280058391.1A CN201280058391A CN103959482B CN 103959482 B CN103959482 B CN 103959482B CN 201280058391 A CN201280058391 A CN 201280058391A CN 103959482 B CN103959482 B CN 103959482B
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cadmium
base plate
concentration
diode
type
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CN103959482A (zh
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劳伦·莫拉德
尼古拉斯·贝尔
约翰·罗瑟曼
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2212—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group II-VI materials, e.g. HgCdTe infrared photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe

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  • Solid State Image Pick-Up Elements (AREA)
CN201280058391.1A 2011-11-28 2012-11-26 用于红外成像器的具有在HgCdTe上自定位的可控异质结构的P-N型二极管 Active CN103959482B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1103617A FR2983351B1 (fr) 2011-11-28 2011-11-28 Diode p/n a heterostructure controlee autopositionnee sur hgcdte pour imageurs infrarouges
FR1103617 2011-11-28
PCT/EP2012/073629 WO2013079446A1 (fr) 2011-11-28 2012-11-26 DIODE P/N A HETEROSTRUCTURE CONTRÔLEE AUTOPOSITIONNEE SUR HgCdTe POUR IMAGEURS INFRAROUGES

Publications (2)

Publication Number Publication Date
CN103959482A CN103959482A (zh) 2014-07-30
CN103959482B true CN103959482B (zh) 2016-10-12

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Country Status (10)

Country Link
US (1) US9178101B2 (enExample)
EP (1) EP2786425B1 (enExample)
JP (1) JP6151266B2 (enExample)
KR (1) KR102064542B1 (enExample)
CN (1) CN103959482B (enExample)
FR (1) FR2983351B1 (enExample)
IL (1) IL232856A (enExample)
IN (1) IN2014MN00998A (enExample)
RU (1) RU2618483C2 (enExample)
WO (1) WO2013079446A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2983351B1 (fr) 2011-11-28 2014-01-24 Commissariat Energie Atomique Diode p/n a heterostructure controlee autopositionnee sur hgcdte pour imageurs infrarouges
CN103855007A (zh) * 2012-11-30 2014-06-11 中国科学院微电子研究所 P型mosfet的制造方法
CN103855013A (zh) * 2012-11-30 2014-06-11 中国科学院微电子研究所 N型mosfet的制造方法
FR3000609B1 (fr) 2012-12-31 2015-01-30 Commissariat Energie Atomique Structure semiconductrice du type photodiode a avalanche a haut rapport signal sur bruit et procede de fabrication d'une telle photodiode
FR3020176B1 (fr) * 2014-04-22 2017-09-29 Commissariat Energie Atomique Matrice de photodiodes en cdhgte
FR3021807B1 (fr) 2014-05-27 2017-09-29 Commissariat A L Energie Atomique Et Aux Energies Alternatives Matrice de photodiodes mesa a ftm amelioree
FR3023976B1 (fr) 2014-07-16 2017-11-17 Commissariat Energie Atomique Matrice de photodiodes cdhgte a faible bruit
FR3027452B1 (fr) * 2014-10-21 2016-12-09 Commissariat Energie Atomique Procede de fabrication d'une photodiode a faible bruit
FR3042310B1 (fr) * 2015-10-12 2018-10-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Fabrication d'une matrice de photodiodes multispectrale en cdhgte par diffusion de cadmium
FR3050572B1 (fr) 2016-04-26 2018-04-13 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif de photo-detection a reseau inter-diodes sur-dope et procede de fabrication
FR3053837B1 (fr) 2016-07-08 2018-08-24 Commissariat A L'energie Atomique Et Aux Energies Alternatives Structure du type photodiode a avalanche et procede de fabrication d'une telle structure
FR3089063A1 (fr) 2018-11-27 2020-05-29 Commissariat A L'energie Atomique Et Aux Energies Alternatives Photodiode sam à multiplication d’un seul type de porteurs dans une région à multicouche périodique
IL297009B2 (en) * 2020-04-09 2025-11-01 Commissariat Energie Atomique Process for manufacturing a low-noise photodetector device in a cdhgte substrate
FR3113781B1 (fr) 2020-08-25 2022-12-16 Commissariat Energie Atomique PROCÉDÉ DE FABRICATION D’UN DISPOSITIF DE PHOTODÉTECTION À FAIBLE BRUIT DANS UN SUBSTRAT EN CdHgTe.
FR3109244B1 (fr) 2020-04-09 2022-04-01 Commissariat Energie Atomique Dispositif de photo-détection à gradient latéral de concentration en cadmium dans la zone de charge d’espace
KR102672685B1 (ko) * 2021-12-17 2024-06-05 한국과학기술연구원 nBn구조를 이용한 중적외선 광검출소자 및 이의 제조방법

Citations (3)

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US4137544A (en) * 1977-07-05 1979-01-30 Honeywell Inc. Mercury cadmium telluride photodiode
US5466953A (en) * 1993-05-28 1995-11-14 Santa Barbara Research Center Denuded zone field effect photoconductive detector
CN1965111A (zh) * 2004-04-06 2007-05-16 秦内蒂克有限公司 碲化汞镉的制造

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JPS61256676A (ja) * 1985-05-09 1986-11-14 Mitsubishi Electric Corp 半導体装置
FR2592740B1 (fr) * 1986-01-08 1988-03-18 Commissariat Energie Atomique Detecteur photovoltaique en hgcdte a heterojonction et son procede de fabrication
JPS63237484A (ja) * 1987-03-25 1988-10-03 Mitsubishi Electric Corp 半導体装置
US5936268A (en) * 1988-03-29 1999-08-10 Raytheon Company Epitaxial passivation of group II-VI infrared photodetectors
US5880510A (en) * 1988-05-11 1999-03-09 Raytheon Company Graded layer passivation of group II-VI infrared photodetectors
JPH03148185A (ja) * 1989-11-02 1991-06-24 Mitsubishi Electric Corp 赤外線検知器
JPH06163469A (ja) * 1992-11-20 1994-06-10 Fujitsu Ltd 半導体のエッチング方法および該エッチング方法を用いた光検知素子の製造方法
JPH06260675A (ja) * 1993-03-09 1994-09-16 Fujitsu Ltd 光検知素子およびその製造方法
JPH0779008A (ja) * 1993-06-30 1995-03-20 Fujitsu Ltd 赤外線検出装置
JP2699838B2 (ja) * 1993-11-25 1998-01-19 日本電気株式会社 赤外線検出器とその製造方法
IL108589A (en) * 1994-02-08 1998-06-15 Technion Res & Dev Foundation SINGLE LAYER PLANAR Hg Cd Te PHOTOVOLTAIC INFRARED DETECTOR WITH HETEROSTRUCTURE PASSIVATION AND P-ON-N HOMOJUNCTION
JP2001274421A (ja) * 2000-03-23 2001-10-05 Toshiba Corp 化合物半導体素子およびその製造方法
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RU2244365C1 (ru) * 2003-12-09 2005-01-10 Федеральное государственное унитарное предприятие "Альфа" Фотоприемное устройство
FR2868602B1 (fr) 2004-04-05 2006-05-26 Commissariat Energie Atomique Circuit de detection photonique a structure mesa
US7368762B2 (en) * 2005-01-06 2008-05-06 Teledyne Licensing, Llc Heterojunction photodiode
FR2934716B1 (fr) 2008-07-31 2010-09-10 Commissariat Energie Atomique Diode electroluminescente en materiau semiconducteur et son procede de fabrication
US8541256B2 (en) * 2011-04-17 2013-09-24 Chang-Feng Wan Method of cadmium molecular beam based anneals for manufacture of HgCdTe photodiode arrays
FR2983351B1 (fr) 2011-11-28 2014-01-24 Commissariat Energie Atomique Diode p/n a heterostructure controlee autopositionnee sur hgcdte pour imageurs infrarouges
FR3000608B1 (fr) 2012-12-31 2015-03-06 Commissariat Energie Atomique Structure semiconductrice du type photodiode a avalanche et procede de fabrication d'une telle structure
FR3000610B1 (fr) 2012-12-31 2015-03-06 Commissariat Energie Atomique Structure semiconductrice du type photodiode a avalanche a faible temps de reponse et procede de fabrication d'une telle photodiode

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Publication number Priority date Publication date Assignee Title
US4137544A (en) * 1977-07-05 1979-01-30 Honeywell Inc. Mercury cadmium telluride photodiode
US5466953A (en) * 1993-05-28 1995-11-14 Santa Barbara Research Center Denuded zone field effect photoconductive detector
CN1965111A (zh) * 2004-04-06 2007-05-16 秦内蒂克有限公司 碲化汞镉的制造

Also Published As

Publication number Publication date
IL232856A (en) 2017-03-30
KR102064542B1 (ko) 2020-01-09
JP6151266B2 (ja) 2017-06-21
FR2983351A1 (fr) 2013-05-31
CN103959482A (zh) 2014-07-30
IL232856A0 (en) 2014-07-31
JP2015504607A (ja) 2015-02-12
KR20140098838A (ko) 2014-08-08
WO2013079446A1 (fr) 2013-06-06
RU2014126434A (ru) 2016-01-27
US9178101B2 (en) 2015-11-03
IN2014MN00998A (enExample) 2015-04-24
FR2983351B1 (fr) 2014-01-24
EP2786425B1 (fr) 2016-03-02
RU2618483C2 (ru) 2017-05-03
US20140319580A1 (en) 2014-10-30
EP2786425A1 (fr) 2014-10-08

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