KR102064542B1 - HgCdTe 에 자기 정렬된 제어 헤테로 구조를 포함하는 적외선 이미저를 위한 p-n 다이오드 - Google Patents

HgCdTe 에 자기 정렬된 제어 헤테로 구조를 포함하는 적외선 이미저를 위한 p-n 다이오드 Download PDF

Info

Publication number
KR102064542B1
KR102064542B1 KR1020147017990A KR20147017990A KR102064542B1 KR 102064542 B1 KR102064542 B1 KR 102064542B1 KR 1020147017990 A KR1020147017990 A KR 1020147017990A KR 20147017990 A KR20147017990 A KR 20147017990A KR 102064542 B1 KR102064542 B1 KR 102064542B1
Authority
KR
South Korea
Prior art keywords
cadmium
junction
diode
substrate
base plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020147017990A
Other languages
English (en)
Korean (ko)
Other versions
KR20140098838A (ko
Inventor
로랑 몰라르
니콜라스 바이에르
조안 로트망
Original Assignee
꼼미사리아 아 레네르지 아또미끄 에 오 에네르지 알떼르나띠브스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 꼼미사리아 아 레네르지 아또미끄 에 오 에네르지 알떼르나띠브스 filed Critical 꼼미사리아 아 레네르지 아또미끄 에 오 에네르지 알떼르나띠브스
Publication of KR20140098838A publication Critical patent/KR20140098838A/ko
Application granted granted Critical
Publication of KR102064542B1 publication Critical patent/KR102064542B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2212—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group II-VI materials, e.g. HgCdTe infrared photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
KR1020147017990A 2011-11-28 2012-11-26 HgCdTe 에 자기 정렬된 제어 헤테로 구조를 포함하는 적외선 이미저를 위한 p-n 다이오드 Active KR102064542B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1103617A FR2983351B1 (fr) 2011-11-28 2011-11-28 Diode p/n a heterostructure controlee autopositionnee sur hgcdte pour imageurs infrarouges
FR1103617 2011-11-28
PCT/EP2012/073629 WO2013079446A1 (fr) 2011-11-28 2012-11-26 DIODE P/N A HETEROSTRUCTURE CONTRÔLEE AUTOPOSITIONNEE SUR HgCdTe POUR IMAGEURS INFRAROUGES

Publications (2)

Publication Number Publication Date
KR20140098838A KR20140098838A (ko) 2014-08-08
KR102064542B1 true KR102064542B1 (ko) 2020-01-09

Family

ID=47221434

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147017990A Active KR102064542B1 (ko) 2011-11-28 2012-11-26 HgCdTe 에 자기 정렬된 제어 헤테로 구조를 포함하는 적외선 이미저를 위한 p-n 다이오드

Country Status (10)

Country Link
US (1) US9178101B2 (enExample)
EP (1) EP2786425B1 (enExample)
JP (1) JP6151266B2 (enExample)
KR (1) KR102064542B1 (enExample)
CN (1) CN103959482B (enExample)
FR (1) FR2983351B1 (enExample)
IL (1) IL232856A (enExample)
IN (1) IN2014MN00998A (enExample)
RU (1) RU2618483C2 (enExample)
WO (1) WO2013079446A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2983351B1 (fr) 2011-11-28 2014-01-24 Commissariat Energie Atomique Diode p/n a heterostructure controlee autopositionnee sur hgcdte pour imageurs infrarouges
CN103855007A (zh) * 2012-11-30 2014-06-11 中国科学院微电子研究所 P型mosfet的制造方法
CN103855013A (zh) * 2012-11-30 2014-06-11 中国科学院微电子研究所 N型mosfet的制造方法
FR3000609B1 (fr) 2012-12-31 2015-01-30 Commissariat Energie Atomique Structure semiconductrice du type photodiode a avalanche a haut rapport signal sur bruit et procede de fabrication d'une telle photodiode
FR3020176B1 (fr) * 2014-04-22 2017-09-29 Commissariat Energie Atomique Matrice de photodiodes en cdhgte
FR3021807B1 (fr) 2014-05-27 2017-09-29 Commissariat A L Energie Atomique Et Aux Energies Alternatives Matrice de photodiodes mesa a ftm amelioree
FR3023976B1 (fr) 2014-07-16 2017-11-17 Commissariat Energie Atomique Matrice de photodiodes cdhgte a faible bruit
FR3027452B1 (fr) * 2014-10-21 2016-12-09 Commissariat Energie Atomique Procede de fabrication d'une photodiode a faible bruit
FR3042310B1 (fr) * 2015-10-12 2018-10-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Fabrication d'une matrice de photodiodes multispectrale en cdhgte par diffusion de cadmium
FR3050572B1 (fr) 2016-04-26 2018-04-13 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif de photo-detection a reseau inter-diodes sur-dope et procede de fabrication
FR3053837B1 (fr) 2016-07-08 2018-08-24 Commissariat A L'energie Atomique Et Aux Energies Alternatives Structure du type photodiode a avalanche et procede de fabrication d'une telle structure
FR3089063A1 (fr) 2018-11-27 2020-05-29 Commissariat A L'energie Atomique Et Aux Energies Alternatives Photodiode sam à multiplication d’un seul type de porteurs dans une région à multicouche périodique
IL297009B2 (en) * 2020-04-09 2025-11-01 Commissariat Energie Atomique Process for manufacturing a low-noise photodetector device in a cdhgte substrate
FR3113781B1 (fr) 2020-08-25 2022-12-16 Commissariat Energie Atomique PROCÉDÉ DE FABRICATION D’UN DISPOSITIF DE PHOTODÉTECTION À FAIBLE BRUIT DANS UN SUBSTRAT EN CdHgTe.
FR3109244B1 (fr) 2020-04-09 2022-04-01 Commissariat Energie Atomique Dispositif de photo-détection à gradient latéral de concentration en cadmium dans la zone de charge d’espace
KR102672685B1 (ko) * 2021-12-17 2024-06-05 한국과학기술연구원 nBn구조를 이용한 중적외선 광검출소자 및 이의 제조방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015504607A (ja) 2011-11-28 2015-02-12 コミサリア ア レネルジィ アトミーク エ オ ゼネ ルジイ アルテアナティーフＣｏｍｍｉｓｓａｒｉａｔａ Ｌ’Ｅｎｅｒｇｉｅ Ａｔｏｍｉｑｕｅ Ｅｔ Ａｕｘ Ｅｎｅｒｇｉｅｓ Ａｌｔｅｒｎａｔｉｖｅｓ Ｈｇｃｄｔｅ上に自己配置された、制御されたヘテロ構造を有する赤外線撮像器用ｐ−ｎダイオード

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4137544A (en) * 1977-07-05 1979-01-30 Honeywell Inc. Mercury cadmium telluride photodiode
JPS61256676A (ja) * 1985-05-09 1986-11-14 Mitsubishi Electric Corp 半導体装置
FR2592740B1 (fr) * 1986-01-08 1988-03-18 Commissariat Energie Atomique Detecteur photovoltaique en hgcdte a heterojonction et son procede de fabrication
JPS63237484A (ja) * 1987-03-25 1988-10-03 Mitsubishi Electric Corp 半導体装置
US5936268A (en) * 1988-03-29 1999-08-10 Raytheon Company Epitaxial passivation of group II-VI infrared photodetectors
US5880510A (en) * 1988-05-11 1999-03-09 Raytheon Company Graded layer passivation of group II-VI infrared photodetectors
JPH03148185A (ja) * 1989-11-02 1991-06-24 Mitsubishi Electric Corp 赤外線検知器
JPH06163469A (ja) * 1992-11-20 1994-06-10 Fujitsu Ltd 半導体のエッチング方法および該エッチング方法を用いた光検知素子の製造方法
JPH06260675A (ja) * 1993-03-09 1994-09-16 Fujitsu Ltd 光検知素子およびその製造方法
US5466953A (en) * 1993-05-28 1995-11-14 Santa Barbara Research Center Denuded zone field effect photoconductive detector
JPH0779008A (ja) * 1993-06-30 1995-03-20 Fujitsu Ltd 赤外線検出装置
JP2699838B2 (ja) * 1993-11-25 1998-01-19 日本電気株式会社 赤外線検出器とその製造方法
IL108589A (en) * 1994-02-08 1998-06-15 Technion Res & Dev Foundation SINGLE LAYER PLANAR Hg Cd Te PHOTOVOLTAIC INFRARED DETECTOR WITH HETEROSTRUCTURE PASSIVATION AND P-ON-N HOMOJUNCTION
JP2001274421A (ja) * 2000-03-23 2001-10-05 Toshiba Corp 化合物半導体素子およびその製造方法
US7041983B2 (en) * 2001-10-12 2006-05-09 Lockheed Martin Corporation Planar geometry buried junction infrared detector and focal plane array
RU2244365C1 (ru) * 2003-12-09 2005-01-10 Федеральное государственное унитарное предприятие "Альфа" Фотоприемное устройство
FR2868602B1 (fr) 2004-04-05 2006-05-26 Commissariat Energie Atomique Circuit de detection photonique a structure mesa
GB0407804D0 (en) * 2004-04-06 2004-05-12 Qinetiq Ltd Manufacture of cadmium mercury telluride
US7368762B2 (en) * 2005-01-06 2008-05-06 Teledyne Licensing, Llc Heterojunction photodiode
FR2934716B1 (fr) 2008-07-31 2010-09-10 Commissariat Energie Atomique Diode electroluminescente en materiau semiconducteur et son procede de fabrication
US8541256B2 (en) * 2011-04-17 2013-09-24 Chang-Feng Wan Method of cadmium molecular beam based anneals for manufacture of HgCdTe photodiode arrays
FR3000608B1 (fr) 2012-12-31 2015-03-06 Commissariat Energie Atomique Structure semiconductrice du type photodiode a avalanche et procede de fabrication d'une telle structure
FR3000610B1 (fr) 2012-12-31 2015-03-06 Commissariat Energie Atomique Structure semiconductrice du type photodiode a avalanche a faible temps de reponse et procede de fabrication d'une telle photodiode

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015504607A (ja) 2011-11-28 2015-02-12 コミサリア ア レネルジィ アトミーク エ オ ゼネ ルジイ アルテアナティーフＣｏｍｍｉｓｓａｒｉａｔａ Ｌ’Ｅｎｅｒｇｉｅ Ａｔｏｍｉｑｕｅ Ｅｔ Ａｕｘ Ｅｎｅｒｇｉｅｓ Ａｌｔｅｒｎａｔｉｖｅｓ Ｈｇｃｄｔｅ上に自己配置された、制御されたヘテロ構造を有する赤外線撮像器用ｐ−ｎダイオード

Also Published As

Publication number Publication date
IL232856A (en) 2017-03-30
CN103959482B (zh) 2016-10-12
JP6151266B2 (ja) 2017-06-21
FR2983351A1 (fr) 2013-05-31
CN103959482A (zh) 2014-07-30
IL232856A0 (en) 2014-07-31
JP2015504607A (ja) 2015-02-12
KR20140098838A (ko) 2014-08-08
WO2013079446A1 (fr) 2013-06-06
RU2014126434A (ru) 2016-01-27
US9178101B2 (en) 2015-11-03
IN2014MN00998A (enExample) 2015-04-24
FR2983351B1 (fr) 2014-01-24
EP2786425B1 (fr) 2016-03-02
RU2618483C2 (ru) 2017-05-03
US20140319580A1 (en) 2014-10-30
EP2786425A1 (fr) 2014-10-08

Similar Documents

Publication Publication Date Title
KR102064542B1 (ko) HgCdTe 에 자기 정렬된 제어 헤테로 구조를 포함하는 적외선 이미저를 위한 p-n 다이오드
KR101902887B1 (ko) 태양 전지의 제조 방법
Mollard et al. Planar p-on-n HgCdTe FPAs by arsenic ion implantation
US9640701B2 (en) Method of manufacturing a low noise photodiode
US20160020241A1 (en) Low noise cdhgte photodiode array
US7855098B2 (en) Method of forming, modifying, or repairing a semiconductor device using field-controlled diffusion
WO2007089222A2 (en) Heterojunction photodiode
US9397244B2 (en) CdHgTe photodiodes array
US8975718B2 (en) Avalanche photodiode-type semiconductor structure with low response time and process for producing such a structure
US10177193B2 (en) Array of mesa photodiodes with an improved MTF
EP3509087A1 (en) Semiconductor crystal substrate, infrared detection device, optical semiconductor device, semiconductor device, thermoelectric transducer, method for producing semiconductor crystal substrate, and method for producing infrared detection device
Rutkowski Planar junction formation in HgCdTe infrared detectors
Mollard et al. HgCdTe FPAs made by Arsenic-ion implantation
Agnihotri et al. Plasma induced type conversion in mercury cadmium telluride
US12514022B2 (en) Method for fabricating a photodiode structure and photodiode structure
Migliorato et al. CdTe/HgCdTe indium-diffused photodiodes
US11476380B2 (en) Photodetection device having a lateral cadmium concentration gradient in the space charge zone
Bahir et al. Characterization of a new planar process for implementation of p-on-n HgCdTe heterostructure infrared photodiodes
JP2751702B2 (ja) 赤外線検出器およびその製造方法
WO1987003744A1 (en) Photodetectors and methods for making such detectors
LeVan et al. HDVIP for low-background-flux and high-operating-temperature applications
JP2001274451A (ja) 半導体撮像素子およびその製造方法
JPH10125949A (ja) 赤外線検知装置

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20140627

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20171124

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20190425

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20191029

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20200103

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20200106

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20221229

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20240102

Start annual number: 5

End annual number: 5