IN2014MN00998A - - Google Patents
Info
- Publication number
- IN2014MN00998A IN2014MN00998A IN998MUN2014A IN2014MN00998A IN 2014MN00998 A IN2014MN00998 A IN 2014MN00998A IN 998MUN2014 A IN998MUN2014 A IN 998MUN2014A IN 2014MN00998 A IN2014MN00998 A IN 2014MN00998A
- Authority
- IN
- India
- Prior art keywords
- concentrated
- diode
- cadmium concentration
- concentration
- forming
- Prior art date
Links
- 229910052793 cadmium Inorganic materials 0.000 abstract 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract 3
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
- H10F30/2212—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group II-VI materials, e.g. HgCdTe infrared photodiodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
- H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
- H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
Landscapes
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1103617A FR2983351B1 (fr) | 2011-11-28 | 2011-11-28 | Diode p/n a heterostructure controlee autopositionnee sur hgcdte pour imageurs infrarouges |
| PCT/EP2012/073629 WO2013079446A1 (fr) | 2011-11-28 | 2012-11-26 | DIODE P/N A HETEROSTRUCTURE CONTRÔLEE AUTOPOSITIONNEE SUR HgCdTe POUR IMAGEURS INFRAROUGES |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2014MN00998A true IN2014MN00998A (enExample) | 2015-04-24 |
Family
ID=47221434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN998MUN2014 IN2014MN00998A (enExample) | 2011-11-28 | 2012-11-26 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US9178101B2 (enExample) |
| EP (1) | EP2786425B1 (enExample) |
| JP (1) | JP6151266B2 (enExample) |
| KR (1) | KR102064542B1 (enExample) |
| CN (1) | CN103959482B (enExample) |
| FR (1) | FR2983351B1 (enExample) |
| IL (1) | IL232856A (enExample) |
| IN (1) | IN2014MN00998A (enExample) |
| RU (1) | RU2618483C2 (enExample) |
| WO (1) | WO2013079446A1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2983351B1 (fr) | 2011-11-28 | 2014-01-24 | Commissariat Energie Atomique | Diode p/n a heterostructure controlee autopositionnee sur hgcdte pour imageurs infrarouges |
| CN103855007A (zh) * | 2012-11-30 | 2014-06-11 | 中国科学院微电子研究所 | P型mosfet的制造方法 |
| CN103855013A (zh) * | 2012-11-30 | 2014-06-11 | 中国科学院微电子研究所 | N型mosfet的制造方法 |
| FR3000609B1 (fr) | 2012-12-31 | 2015-01-30 | Commissariat Energie Atomique | Structure semiconductrice du type photodiode a avalanche a haut rapport signal sur bruit et procede de fabrication d'une telle photodiode |
| FR3020176B1 (fr) * | 2014-04-22 | 2017-09-29 | Commissariat Energie Atomique | Matrice de photodiodes en cdhgte |
| FR3021807B1 (fr) | 2014-05-27 | 2017-09-29 | Commissariat A L Energie Atomique Et Aux Energies Alternatives | Matrice de photodiodes mesa a ftm amelioree |
| FR3023976B1 (fr) | 2014-07-16 | 2017-11-17 | Commissariat Energie Atomique | Matrice de photodiodes cdhgte a faible bruit |
| FR3027452B1 (fr) * | 2014-10-21 | 2016-12-09 | Commissariat Energie Atomique | Procede de fabrication d'une photodiode a faible bruit |
| FR3042310B1 (fr) * | 2015-10-12 | 2018-10-12 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Fabrication d'une matrice de photodiodes multispectrale en cdhgte par diffusion de cadmium |
| FR3050572B1 (fr) | 2016-04-26 | 2018-04-13 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif de photo-detection a reseau inter-diodes sur-dope et procede de fabrication |
| FR3053837B1 (fr) | 2016-07-08 | 2018-08-24 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Structure du type photodiode a avalanche et procede de fabrication d'une telle structure |
| FR3089063A1 (fr) | 2018-11-27 | 2020-05-29 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Photodiode sam à multiplication d’un seul type de porteurs dans une région à multicouche périodique |
| IL297009B2 (en) * | 2020-04-09 | 2025-11-01 | Commissariat Energie Atomique | Process for manufacturing a low-noise photodetector device in a cdhgte substrate |
| FR3113781B1 (fr) | 2020-08-25 | 2022-12-16 | Commissariat Energie Atomique | PROCÉDÉ DE FABRICATION D’UN DISPOSITIF DE PHOTODÉTECTION À FAIBLE BRUIT DANS UN SUBSTRAT EN CdHgTe. |
| FR3109244B1 (fr) | 2020-04-09 | 2022-04-01 | Commissariat Energie Atomique | Dispositif de photo-détection à gradient latéral de concentration en cadmium dans la zone de charge d’espace |
| KR102672685B1 (ko) * | 2021-12-17 | 2024-06-05 | 한국과학기술연구원 | nBn구조를 이용한 중적외선 광검출소자 및 이의 제조방법 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4137544A (en) * | 1977-07-05 | 1979-01-30 | Honeywell Inc. | Mercury cadmium telluride photodiode |
| JPS61256676A (ja) * | 1985-05-09 | 1986-11-14 | Mitsubishi Electric Corp | 半導体装置 |
| FR2592740B1 (fr) * | 1986-01-08 | 1988-03-18 | Commissariat Energie Atomique | Detecteur photovoltaique en hgcdte a heterojonction et son procede de fabrication |
| JPS63237484A (ja) * | 1987-03-25 | 1988-10-03 | Mitsubishi Electric Corp | 半導体装置 |
| US5936268A (en) * | 1988-03-29 | 1999-08-10 | Raytheon Company | Epitaxial passivation of group II-VI infrared photodetectors |
| US5880510A (en) * | 1988-05-11 | 1999-03-09 | Raytheon Company | Graded layer passivation of group II-VI infrared photodetectors |
| JPH03148185A (ja) * | 1989-11-02 | 1991-06-24 | Mitsubishi Electric Corp | 赤外線検知器 |
| JPH06163469A (ja) * | 1992-11-20 | 1994-06-10 | Fujitsu Ltd | 半導体のエッチング方法および該エッチング方法を用いた光検知素子の製造方法 |
| JPH06260675A (ja) * | 1993-03-09 | 1994-09-16 | Fujitsu Ltd | 光検知素子およびその製造方法 |
| US5466953A (en) * | 1993-05-28 | 1995-11-14 | Santa Barbara Research Center | Denuded zone field effect photoconductive detector |
| JPH0779008A (ja) * | 1993-06-30 | 1995-03-20 | Fujitsu Ltd | 赤外線検出装置 |
| JP2699838B2 (ja) * | 1993-11-25 | 1998-01-19 | 日本電気株式会社 | 赤外線検出器とその製造方法 |
| IL108589A (en) * | 1994-02-08 | 1998-06-15 | Technion Res & Dev Foundation | SINGLE LAYER PLANAR Hg Cd Te PHOTOVOLTAIC INFRARED DETECTOR WITH HETEROSTRUCTURE PASSIVATION AND P-ON-N HOMOJUNCTION |
| JP2001274421A (ja) * | 2000-03-23 | 2001-10-05 | Toshiba Corp | 化合物半導体素子およびその製造方法 |
| US7041983B2 (en) * | 2001-10-12 | 2006-05-09 | Lockheed Martin Corporation | Planar geometry buried junction infrared detector and focal plane array |
| RU2244365C1 (ru) * | 2003-12-09 | 2005-01-10 | Федеральное государственное унитарное предприятие "Альфа" | Фотоприемное устройство |
| FR2868602B1 (fr) | 2004-04-05 | 2006-05-26 | Commissariat Energie Atomique | Circuit de detection photonique a structure mesa |
| GB0407804D0 (en) * | 2004-04-06 | 2004-05-12 | Qinetiq Ltd | Manufacture of cadmium mercury telluride |
| US7368762B2 (en) * | 2005-01-06 | 2008-05-06 | Teledyne Licensing, Llc | Heterojunction photodiode |
| FR2934716B1 (fr) | 2008-07-31 | 2010-09-10 | Commissariat Energie Atomique | Diode electroluminescente en materiau semiconducteur et son procede de fabrication |
| US8541256B2 (en) * | 2011-04-17 | 2013-09-24 | Chang-Feng Wan | Method of cadmium molecular beam based anneals for manufacture of HgCdTe photodiode arrays |
| FR2983351B1 (fr) | 2011-11-28 | 2014-01-24 | Commissariat Energie Atomique | Diode p/n a heterostructure controlee autopositionnee sur hgcdte pour imageurs infrarouges |
| FR3000608B1 (fr) | 2012-12-31 | 2015-03-06 | Commissariat Energie Atomique | Structure semiconductrice du type photodiode a avalanche et procede de fabrication d'une telle structure |
| FR3000610B1 (fr) | 2012-12-31 | 2015-03-06 | Commissariat Energie Atomique | Structure semiconductrice du type photodiode a avalanche a faible temps de reponse et procede de fabrication d'une telle photodiode |
-
2011
- 2011-11-28 FR FR1103617A patent/FR2983351B1/fr not_active Expired - Fee Related
-
2012
- 2012-11-26 IN IN998MUN2014 patent/IN2014MN00998A/en unknown
- 2012-11-26 US US14/359,216 patent/US9178101B2/en active Active
- 2012-11-26 KR KR1020147017990A patent/KR102064542B1/ko active Active
- 2012-11-26 WO PCT/EP2012/073629 patent/WO2013079446A1/fr not_active Ceased
- 2012-11-26 RU RU2014126434A patent/RU2618483C2/ru active
- 2012-11-26 JP JP2014542878A patent/JP6151266B2/ja active Active
- 2012-11-26 EP EP12790573.5A patent/EP2786425B1/fr active Active
- 2012-11-26 CN CN201280058391.1A patent/CN103959482B/zh active Active
-
2014
- 2014-05-28 IL IL232856A patent/IL232856A/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| IL232856A (en) | 2017-03-30 |
| CN103959482B (zh) | 2016-10-12 |
| KR102064542B1 (ko) | 2020-01-09 |
| JP6151266B2 (ja) | 2017-06-21 |
| FR2983351A1 (fr) | 2013-05-31 |
| CN103959482A (zh) | 2014-07-30 |
| IL232856A0 (en) | 2014-07-31 |
| JP2015504607A (ja) | 2015-02-12 |
| KR20140098838A (ko) | 2014-08-08 |
| WO2013079446A1 (fr) | 2013-06-06 |
| RU2014126434A (ru) | 2016-01-27 |
| US9178101B2 (en) | 2015-11-03 |
| FR2983351B1 (fr) | 2014-01-24 |
| EP2786425B1 (fr) | 2016-03-02 |
| RU2618483C2 (ru) | 2017-05-03 |
| US20140319580A1 (en) | 2014-10-30 |
| EP2786425A1 (fr) | 2014-10-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| IN2014MN00998A (enExample) | ||
| WO2013049415A3 (en) | P-type doping layers for use with light emitting devices | |
| WO2014167455A3 (en) | Top emitting semiconductor light emitting device | |
| EP2542108A4 (en) | FLEXION GROOVE SOLE ASSEMBLY WITH SOLICITATION STRUCTURE | |
| EP2879189A3 (en) | Solar cell and method of manufacturing the same | |
| EP4254506A3 (en) | Mix doping of a semi-insulating group iii nitride | |
| WO2011140273A3 (en) | Photovoltaic devices and associated methods | |
| EP4235798A3 (en) | Schottky diodes and method of manufacturing the same | |
| MY181191A (en) | Metal-foil-assisted fabrication of thin-silicon solar cell | |
| GB201104824D0 (en) | Structures and methods relating to graphene | |
| MY158676A (en) | Photovoltaic devices and method of making | |
| TW201613098A (en) | Semiconductor device | |
| GB2508781A (en) | Photovoltaic Devices | |
| PH12015501065A1 (en) | Autostereoscopic display device | |
| WO2012021227A3 (en) | Heterojunction solar cell | |
| GB2533063A (en) | Structures and methods with reduced sensitivity to surface charge | |
| SG153032A1 (en) | Integrated circuit system employing diffused source/drain extensions | |
| EP2597680A3 (en) | Semiconductor device | |
| WO2013049416A3 (en) | Light emitting regions for use with light emitting devices | |
| GB2522597A (en) | Lattice mismatched hetero-epitaxial film | |
| IN2014CN03275A (enExample) | ||
| AR090128A1 (es) | Anticuerpos contra la endotelina 1 grande (et-1 grande) y sus usos | |
| GB2517855A (en) | Double layer interleaved p-n diode modulator | |
| WO2014070888A8 (en) | Organic conductive materials and devices | |
| TW201130119A (en) | Back side illumination image sensor and a process thereof |