RU2618483C2 - ДИОД С p-n-ПЕРЕХОДОМ, ИМЕЮЩИЙ РЕГУЛИРУЕМУЮ ГЕТЕРОСТРУКТУРУ, САМОПОЗИЦИОНИРУЮЩУЮСЯ НА HgCdTe, ДЛЯ ФОРМИРОВАТЕЛЯ СИГНАЛОВ ИЗОБРАЖЕНИЯ В ИНФРАКРАСНОЙ ОБЛАСТИ СПЕКТРА - Google Patents

ДИОД С p-n-ПЕРЕХОДОМ, ИМЕЮЩИЙ РЕГУЛИРУЕМУЮ ГЕТЕРОСТРУКТУРУ, САМОПОЗИЦИОНИРУЮЩУЮСЯ НА HgCdTe, ДЛЯ ФОРМИРОВАТЕЛЯ СИГНАЛОВ ИЗОБРАЖЕНИЯ В ИНФРАКРАСНОЙ ОБЛАСТИ СПЕКТРА Download PDF

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RU2618483C2
RU2618483C2 RU2014126434A RU2014126434A RU2618483C2 RU 2618483 C2 RU2618483 C2 RU 2618483C2 RU 2014126434 A RU2014126434 A RU 2014126434A RU 2014126434 A RU2014126434 A RU 2014126434A RU 2618483 C2 RU2618483 C2 RU 2618483C2
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cadmium
junction
concentration
diode
substrate
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RU2014126434A
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Russian (ru)
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RU2014126434A (ru
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Лоран МОЛЛАР
Николя БАЙЕР
Йохан РОТМАН
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Коммиссариат А Л'Энержи Атомик Э О Энержи Альтернатив
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2212—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group II-VI materials, e.g. HgCdTe infrared photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe

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RU2014126434A 2011-11-28 2012-11-26 ДИОД С p-n-ПЕРЕХОДОМ, ИМЕЮЩИЙ РЕГУЛИРУЕМУЮ ГЕТЕРОСТРУКТУРУ, САМОПОЗИЦИОНИРУЮЩУЮСЯ НА HgCdTe, ДЛЯ ФОРМИРОВАТЕЛЯ СИГНАЛОВ ИЗОБРАЖЕНИЯ В ИНФРАКРАСНОЙ ОБЛАСТИ СПЕКТРА RU2618483C2 (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1103617A FR2983351B1 (fr) 2011-11-28 2011-11-28 Diode p/n a heterostructure controlee autopositionnee sur hgcdte pour imageurs infrarouges
FR1103617 2011-11-28
PCT/EP2012/073629 WO2013079446A1 (fr) 2011-11-28 2012-11-26 DIODE P/N A HETEROSTRUCTURE CONTRÔLEE AUTOPOSITIONNEE SUR HgCdTe POUR IMAGEURS INFRAROUGES

Publications (2)

Publication Number Publication Date
RU2014126434A RU2014126434A (ru) 2016-01-27
RU2618483C2 true RU2618483C2 (ru) 2017-05-03

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Application Number Title Priority Date Filing Date
RU2014126434A RU2618483C2 (ru) 2011-11-28 2012-11-26 ДИОД С p-n-ПЕРЕХОДОМ, ИМЕЮЩИЙ РЕГУЛИРУЕМУЮ ГЕТЕРОСТРУКТУРУ, САМОПОЗИЦИОНИРУЮЩУЮСЯ НА HgCdTe, ДЛЯ ФОРМИРОВАТЕЛЯ СИГНАЛОВ ИЗОБРАЖЕНИЯ В ИНФРАКРАСНОЙ ОБЛАСТИ СПЕКТРА

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Country Link
US (1) US9178101B2 (enExample)
EP (1) EP2786425B1 (enExample)
JP (1) JP6151266B2 (enExample)
KR (1) KR102064542B1 (enExample)
CN (1) CN103959482B (enExample)
FR (1) FR2983351B1 (enExample)
IL (1) IL232856A (enExample)
IN (1) IN2014MN00998A (enExample)
RU (1) RU2618483C2 (enExample)
WO (1) WO2013079446A1 (enExample)

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* Cited by examiner, † Cited by third party
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FR2983351B1 (fr) 2011-11-28 2014-01-24 Commissariat Energie Atomique Diode p/n a heterostructure controlee autopositionnee sur hgcdte pour imageurs infrarouges
CN103855007A (zh) * 2012-11-30 2014-06-11 中国科学院微电子研究所 P型mosfet的制造方法
CN103855013A (zh) * 2012-11-30 2014-06-11 中国科学院微电子研究所 N型mosfet的制造方法
FR3000609B1 (fr) 2012-12-31 2015-01-30 Commissariat Energie Atomique Structure semiconductrice du type photodiode a avalanche a haut rapport signal sur bruit et procede de fabrication d'une telle photodiode
FR3020176B1 (fr) 2014-04-22 2017-09-29 Commissariat Energie Atomique Matrice de photodiodes en cdhgte
FR3021807B1 (fr) 2014-05-27 2017-09-29 Commissariat A L Energie Atomique Et Aux Energies Alternatives Matrice de photodiodes mesa a ftm amelioree
FR3023976B1 (fr) 2014-07-16 2017-11-17 Commissariat Energie Atomique Matrice de photodiodes cdhgte a faible bruit
FR3027452B1 (fr) * 2014-10-21 2016-12-09 Commissariat Energie Atomique Procede de fabrication d'une photodiode a faible bruit
FR3042310B1 (fr) * 2015-10-12 2018-10-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Fabrication d'une matrice de photodiodes multispectrale en cdhgte par diffusion de cadmium
FR3050572B1 (fr) 2016-04-26 2018-04-13 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif de photo-detection a reseau inter-diodes sur-dope et procede de fabrication
FR3053837B1 (fr) 2016-07-08 2018-08-24 Commissariat A L'energie Atomique Et Aux Energies Alternatives Structure du type photodiode a avalanche et procede de fabrication d'une telle structure
FR3089063A1 (fr) 2018-11-27 2020-05-29 Commissariat A L'energie Atomique Et Aux Energies Alternatives Photodiode sam à multiplication d’un seul type de porteurs dans une région à multicouche périodique
FR3109244B1 (fr) * 2020-04-09 2022-04-01 Commissariat Energie Atomique Dispositif de photo-détection à gradient latéral de concentration en cadmium dans la zone de charge d’espace
IL297009B2 (en) 2020-04-09 2025-11-01 Commissariat Energie Atomique Process for manufacturing a low-noise photodetector device in a cdhgte substrate
FR3113781B1 (fr) 2020-08-25 2022-12-16 Commissariat Energie Atomique PROCÉDÉ DE FABRICATION D’UN DISPOSITIF DE PHOTODÉTECTION À FAIBLE BRUIT DANS UN SUBSTRAT EN CdHgTe.
KR102672685B1 (ko) * 2021-12-17 2024-06-05 한국과학기술연구원 nBn구조를 이용한 중적외선 광검출소자 및 이의 제조방법

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EP0229574A1 (fr) * 1986-01-08 1987-07-22 Commissariat A L'energie Atomique Detecteur photovoltaique en HgCdTe a heterojonction et son procédé de fabrication
US5608208A (en) * 1994-02-08 1997-03-04 Technion Research & Development Foundation Ltd. Single layer planar HgCdTe photovoltaic infrared detector with heterostructure passivation and p-on-n homojunction
US5936268A (en) * 1988-03-29 1999-08-10 Raytheon Company Epitaxial passivation of group II-VI infrared photodetectors
RU2244365C1 (ru) * 2003-12-09 2005-01-10 Федеральное государственное унитарное предприятие "Альфа" Фотоприемное устройство
US20070034898A1 (en) * 2005-01-06 2007-02-15 Rockwell Scientific Licensing, Llc Heterojunction photodiode

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FR2983351B1 (fr) 2011-11-28 2014-01-24 Commissariat Energie Atomique Diode p/n a heterostructure controlee autopositionnee sur hgcdte pour imageurs infrarouges
FR3000608B1 (fr) 2012-12-31 2015-03-06 Commissariat Energie Atomique Structure semiconductrice du type photodiode a avalanche et procede de fabrication d'une telle structure
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US5936268A (en) * 1988-03-29 1999-08-10 Raytheon Company Epitaxial passivation of group II-VI infrared photodetectors
US5608208A (en) * 1994-02-08 1997-03-04 Technion Research & Development Foundation Ltd. Single layer planar HgCdTe photovoltaic infrared detector with heterostructure passivation and p-on-n homojunction
RU2244365C1 (ru) * 2003-12-09 2005-01-10 Федеральное государственное унитарное предприятие "Альфа" Фотоприемное устройство
US20070034898A1 (en) * 2005-01-06 2007-02-15 Rockwell Scientific Licensing, Llc Heterojunction photodiode

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Publication number Publication date
WO2013079446A1 (fr) 2013-06-06
US9178101B2 (en) 2015-11-03
EP2786425B1 (fr) 2016-03-02
EP2786425A1 (fr) 2014-10-08
KR102064542B1 (ko) 2020-01-09
RU2014126434A (ru) 2016-01-27
IL232856A0 (en) 2014-07-31
JP2015504607A (ja) 2015-02-12
FR2983351B1 (fr) 2014-01-24
IL232856A (en) 2017-03-30
FR2983351A1 (fr) 2013-05-31
US20140319580A1 (en) 2014-10-30
KR20140098838A (ko) 2014-08-08
CN103959482B (zh) 2016-10-12
CN103959482A (zh) 2014-07-30
IN2014MN00998A (enExample) 2015-04-24
JP6151266B2 (ja) 2017-06-21

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