CN1037637C - 一种铁电存储单元和读写其极化状态的方法 - Google Patents

一种铁电存储单元和读写其极化状态的方法 Download PDF

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Publication number
CN1037637C
CN1037637C CN94102633A CN94102633A CN1037637C CN 1037637 C CN1037637 C CN 1037637C CN 94102633 A CN94102633 A CN 94102633A CN 94102633 A CN94102633 A CN 94102633A CN 1037637 C CN1037637 C CN 1037637C
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China
Prior art keywords
ferroelectric
ferroelectric condenser
electric field
charge
current potential
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Expired - Fee Related
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CN94102633A
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English (en)
Chinese (zh)
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CN1101747A (zh
Inventor
霍华德·C·基尔希
帕普·D·马尼尔
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NXP USA Inc
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Motorola Inc
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Publication of CN1101747A publication Critical patent/CN1101747A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
CN94102633A 1993-03-08 1994-03-04 一种铁电存储单元和读写其极化状态的方法 Expired - Fee Related CN1037637C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/028,915 US5432731A (en) 1993-03-08 1993-03-08 Ferroelectric memory cell and method of sensing and writing the polarization state thereof
US028,915 1993-03-08

Publications (2)

Publication Number Publication Date
CN1101747A CN1101747A (zh) 1995-04-19
CN1037637C true CN1037637C (zh) 1998-03-04

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Family Applications (1)

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CN94102633A Expired - Fee Related CN1037637C (zh) 1993-03-08 1994-03-04 一种铁电存储单元和读写其极化状态的方法

Country Status (6)

Country Link
US (1) US5432731A (OSRAM)
EP (1) EP0615247A3 (OSRAM)
JP (1) JPH0845268A (OSRAM)
KR (1) KR940022579A (OSRAM)
CN (1) CN1037637C (OSRAM)
TW (1) TW240312B (OSRAM)

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US5677865A (en) * 1995-09-11 1997-10-14 Micron Technology, Inc. Ferroelectric memory using reference charge circuit
US5905672A (en) * 1997-03-27 1999-05-18 Micron Technology, Inc. Ferroelectric memory using ferroelectric reference cells
US5680344A (en) * 1995-09-11 1997-10-21 Micron Technology, Inc. Circuit and method of operating a ferrolectric memory in a DRAM mode
US5638318A (en) * 1995-09-11 1997-06-10 Micron Technology, Inc. Ferroelectric memory using ferroelectric reference cells
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US5724283A (en) * 1996-06-14 1998-03-03 Motorola, Inc. Data storage element and method for restoring data
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US5880989A (en) * 1997-11-14 1999-03-09 Ramtron International Corporation Sensing methodology for a 1T/1C ferroelectric memory
KR100548847B1 (ko) * 1998-10-28 2006-03-31 주식회사 하이닉스반도체 수명을 연장시킨 강유전체 메모리 장치
US6282126B1 (en) 1998-12-16 2001-08-28 Micron Technology, Inc. Flash memory with overerase protection
KR100308188B1 (ko) * 1999-04-27 2001-10-29 윤종용 안정된 감지 마진을 가지는 강유전체 랜덤 액세스 메모리
KR100340066B1 (ko) * 1999-06-28 2002-06-12 박종섭 강유전체 커패시터의 히스테리시스 특성을 측정할 수 있는 강유전체 메모리 장치
JP2001093988A (ja) * 1999-07-22 2001-04-06 Sony Corp 半導体記憶装置
JP3928837B2 (ja) * 1999-09-13 2007-06-13 株式会社ルネサステクノロジ 半導体集積回路装置
JP2001118999A (ja) * 1999-10-15 2001-04-27 Hitachi Ltd ダイナミック型ｒａｍと半導体装置
US6285604B1 (en) * 2000-01-06 2001-09-04 Taiwan Semiconductor Manufacturing Co., Ltd. Dummy memory cells for high accuracy self-timing circuits in dual-port SRAM
EP1126525A3 (en) * 2000-02-15 2005-10-19 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device, method for driving the same and method for fabricating the same
JP2001256774A (ja) * 2000-03-09 2001-09-21 Matsushita Electric Ind Co Ltd 半導体記憶装置のデータ読み出し方法、データ書き込み方法および駆動方法
KR100379513B1 (ko) 2000-10-24 2003-04-10 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치 및 그의 구동방법
KR100379519B1 (ko) 2000-11-16 2003-04-10 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치의 레퍼런스 플레이트라인의 타이밍 발생회로 및 레퍼런스 셀의 구동방법
KR100379520B1 (ko) 2000-11-16 2003-04-10 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치의 구동방법
TW514918B (en) * 2000-11-17 2002-12-21 Macronix Int Co Ltd Method and structure for sensing the polarity of ferro-electric capacitor in the ferro-electric memory
KR100382546B1 (ko) 2000-12-04 2003-05-09 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치 및 그를 이용한 불량셀검출방법
JP3856424B2 (ja) * 2000-12-25 2006-12-13 株式会社東芝 半導体記憶装置
NO20015735D0 (no) * 2001-11-23 2001-11-23 Thin Film Electronics Asa Barrierelag
KR100460767B1 (ko) * 2001-12-20 2004-12-09 주식회사 하이닉스반도체 강유전체 메모리 소자의 기준전압 발생장치
WO2005122180A1 (ja) * 2004-06-08 2005-12-22 Fujitsu Limited 半導体記憶装置の検査方法
KR100735748B1 (ko) * 2005-11-09 2007-07-06 삼성전자주식회사 가변성 저항체들을 데이터 저장요소들로 채택하는 메모리셀들을 갖는 반도체 소자들, 이를 채택하는 시스템들 및 그구동방법들
KR100735750B1 (ko) 2005-12-15 2007-07-06 삼성전자주식회사 복수개의 균일한 기준 데이터들을 생성하는 기준 셀 블록및 감지증폭 유니트들을 구비하는 반도체 소자들 및 이를채택하는 시스템들
CN101271728B (zh) * 2008-04-22 2011-05-11 清华大学 一种抑制小信号干扰的铁电存储器存储阵列结构
CN103558475B (zh) * 2013-11-08 2016-05-18 中国科学院上海硅酸盐研究所 一种用于检测铁电陶瓷储能特性的方法
US10403347B2 (en) * 2018-01-29 2019-09-03 Micron Technology, Inc. Apparatuses and methods for accessing ferroelectric memory including providing reference voltage level

Citations (1)

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US5086412A (en) * 1990-11-21 1992-02-04 National Semiconductor Corporation Sense amplifier and method for ferroelectric memory

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US4873664A (en) * 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory
DE3887924T3 (de) * 1987-06-02 1999-08-12 National Semiconductor Corp., Santa Clara, Calif. Nichtflüchtige Speicheranordnung mit einem kapazitiven ferroelektrischen Speicherelement.
US4893272A (en) * 1988-04-22 1990-01-09 Ramtron Corporation Ferroelectric retention method
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Patent Citations (1)

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US5086412A (en) * 1990-11-21 1992-02-04 National Semiconductor Corporation Sense amplifier and method for ferroelectric memory

Also Published As

Publication number Publication date
TW240312B (OSRAM) 1995-02-11
CN1101747A (zh) 1995-04-19
EP0615247A3 (en) 1994-10-26
US5432731A (en) 1995-07-11
KR940022579A (ko) 1994-10-21
EP0615247A2 (en) 1994-09-14
JPH0845268A (ja) 1996-02-16

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Patentee before: Motorola, Inc.

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