TW240312B - - Google Patents
Info
- Publication number
- TW240312B TW240312B TW083100414A TW83100414A TW240312B TW 240312 B TW240312 B TW 240312B TW 083100414 A TW083100414 A TW 083100414A TW 83100414 A TW83100414 A TW 83100414A TW 240312 B TW240312 B TW 240312B
- Authority
- TW
- Taiwan
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/028,915 US5432731A (en) | 1993-03-08 | 1993-03-08 | Ferroelectric memory cell and method of sensing and writing the polarization state thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
TW240312B true TW240312B (zh) | 1995-02-11 |
Family
ID=21846223
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW083100414A TW240312B (zh) | 1993-03-08 | 1994-01-19 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5432731A (zh) |
EP (1) | EP0615247A3 (zh) |
JP (1) | JPH0845268A (zh) |
KR (1) | KR940022579A (zh) |
CN (1) | CN1037637C (zh) |
TW (1) | TW240312B (zh) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5729488A (en) * | 1994-08-26 | 1998-03-17 | Hughes Electronics | Non-destructive read ferroelectric memory cell utilizing the ramer-drab effect |
US5572459A (en) * | 1994-09-16 | 1996-11-05 | Ramtron International Corporation | Voltage reference for a ferroelectric 1T/1C based memory |
TW378323B (en) * | 1994-09-22 | 2000-01-01 | Matsushita Electric Ind Co Ltd | Ferroelectric memory device |
US5498984A (en) * | 1994-09-30 | 1996-03-12 | Maxim Integrated Products | High side, current sense amplifier using a symmetric amplifier |
JPH08329686A (ja) * | 1995-03-27 | 1996-12-13 | Sony Corp | 強誘電体記憶装置 |
US5530668A (en) * | 1995-04-12 | 1996-06-25 | Ramtron International Corporation | Ferroelectric memory sensing scheme using bit lines precharged to a logic one voltage |
EP0749127B1 (en) * | 1995-06-14 | 2001-09-26 | Motorola, Inc. | Data storage element and method for restoring data |
US5677865A (en) * | 1995-09-11 | 1997-10-14 | Micron Technology, Inc. | Ferroelectric memory using reference charge circuit |
US5680344A (en) * | 1995-09-11 | 1997-10-21 | Micron Technology, Inc. | Circuit and method of operating a ferrolectric memory in a DRAM mode |
US5905672A (en) * | 1997-03-27 | 1999-05-18 | Micron Technology, Inc. | Ferroelectric memory using ferroelectric reference cells |
US5638318A (en) * | 1995-09-11 | 1997-06-10 | Micron Technology, Inc. | Ferroelectric memory using ferroelectric reference cells |
JPH09288891A (ja) * | 1996-04-19 | 1997-11-04 | Matsushita Electron Corp | 半導体メモリ装置 |
US5724283A (en) * | 1996-06-14 | 1998-03-03 | Motorola, Inc. | Data storage element and method for restoring data |
KR100313932B1 (ko) * | 1997-09-26 | 2002-01-15 | 김영환 | 반도체메모리소자의강유전체제조방법 |
US5880989A (en) * | 1997-11-14 | 1999-03-09 | Ramtron International Corporation | Sensing methodology for a 1T/1C ferroelectric memory |
KR100548847B1 (ko) * | 1998-10-28 | 2006-03-31 | 주식회사 하이닉스반도체 | 수명을 연장시킨 강유전체 메모리 장치 |
US6282126B1 (en) | 1998-12-16 | 2001-08-28 | Micron Technology, Inc. | Flash memory with overerase protection |
KR100308188B1 (ko) * | 1999-04-27 | 2001-10-29 | 윤종용 | 안정된 감지 마진을 가지는 강유전체 랜덤 액세스 메모리 |
KR100340066B1 (ko) * | 1999-06-28 | 2002-06-12 | 박종섭 | 강유전체 커패시터의 히스테리시스 특성을 측정할 수 있는 강유전체 메모리 장치 |
JP2001093988A (ja) * | 1999-07-22 | 2001-04-06 | Sony Corp | 半導体記憶装置 |
JP3928837B2 (ja) * | 1999-09-13 | 2007-06-13 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
JP2001118999A (ja) * | 1999-10-15 | 2001-04-27 | Hitachi Ltd | ダイナミック型ramと半導体装置 |
US6285604B1 (en) * | 2000-01-06 | 2001-09-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dummy memory cells for high accuracy self-timing circuits in dual-port SRAM |
EP1126525A3 (en) * | 2000-02-15 | 2005-10-19 | Matsushita Electric Industrial Co., Ltd. | Semiconductor memory device, method for driving the same and method for fabricating the same |
JP2001256774A (ja) * | 2000-03-09 | 2001-09-21 | Matsushita Electric Ind Co Ltd | 半導体記憶装置のデータ読み出し方法、データ書き込み方法および駆動方法 |
KR100379513B1 (ko) | 2000-10-24 | 2003-04-10 | 주식회사 하이닉스반도체 | 불휘발성 강유전체 메모리 장치 및 그의 구동방법 |
KR100379520B1 (ko) | 2000-11-16 | 2003-04-10 | 주식회사 하이닉스반도체 | 불휘발성 강유전체 메모리 장치의 구동방법 |
KR100379519B1 (ko) | 2000-11-16 | 2003-04-10 | 주식회사 하이닉스반도체 | 불휘발성 강유전체 메모리 장치의 레퍼런스 플레이트라인의 타이밍 발생회로 및 레퍼런스 셀의 구동방법 |
TW514918B (en) * | 2000-11-17 | 2002-12-21 | Macronix Int Co Ltd | Method and structure for sensing the polarity of ferro-electric capacitor in the ferro-electric memory |
KR100382546B1 (ko) | 2000-12-04 | 2003-05-09 | 주식회사 하이닉스반도체 | 불휘발성 강유전체 메모리 장치 및 그를 이용한 불량셀검출방법 |
JP3856424B2 (ja) * | 2000-12-25 | 2006-12-13 | 株式会社東芝 | 半導体記憶装置 |
NO20015735D0 (no) * | 2001-11-23 | 2001-11-23 | Thin Film Electronics Asa | Barrierelag |
KR100460767B1 (ko) * | 2001-12-20 | 2004-12-09 | 주식회사 하이닉스반도체 | 강유전체 메모리 소자의 기준전압 발생장치 |
WO2005122180A1 (ja) * | 2004-06-08 | 2005-12-22 | Fujitsu Limited | 半導体記憶装置の検査方法 |
KR100735748B1 (ko) | 2005-11-09 | 2007-07-06 | 삼성전자주식회사 | 가변성 저항체들을 데이터 저장요소들로 채택하는 메모리셀들을 갖는 반도체 소자들, 이를 채택하는 시스템들 및 그구동방법들 |
KR100735750B1 (ko) | 2005-12-15 | 2007-07-06 | 삼성전자주식회사 | 복수개의 균일한 기준 데이터들을 생성하는 기준 셀 블록및 감지증폭 유니트들을 구비하는 반도체 소자들 및 이를채택하는 시스템들 |
CN101271728B (zh) * | 2008-04-22 | 2011-05-11 | 清华大学 | 一种抑制小信号干扰的铁电存储器存储阵列结构 |
CN103558475B (zh) * | 2013-11-08 | 2016-05-18 | 中国科学院上海硅酸盐研究所 | 一种用于检测铁电陶瓷储能特性的方法 |
US10403347B2 (en) * | 2018-01-29 | 2019-09-03 | Micron Technology, Inc. | Apparatuses and methods for accessing ferroelectric memory including providing reference voltage level |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4873664A (en) * | 1987-02-12 | 1989-10-10 | Ramtron Corporation | Self restoring ferroelectric memory |
DE3887924T3 (de) * | 1987-06-02 | 1999-08-12 | Nat Semiconductor Corp | Nichtflüchtige Speicheranordnung mit einem kapazitiven ferroelektrischen Speicherelement. |
US4893272A (en) * | 1988-04-22 | 1990-01-09 | Ramtron Corporation | Ferroelectric retention method |
US4888733A (en) * | 1988-09-12 | 1989-12-19 | Ramtron Corporation | Non-volatile memory cell and sensing method |
US5086412A (en) * | 1990-11-21 | 1992-02-04 | National Semiconductor Corporation | Sense amplifier and method for ferroelectric memory |
US5031143A (en) * | 1990-11-21 | 1991-07-09 | National Semiconductor Corporation | Preamplifier for ferroelectric memory device sense amplifier |
US5218566A (en) * | 1991-08-15 | 1993-06-08 | National Semiconductor Corporation | Dynamic adjusting reference voltage for ferroelectric circuits |
US5237533A (en) * | 1991-12-20 | 1993-08-17 | National Semiconductor Corporation | High speed switched sense amplifier |
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1993
- 1993-03-08 US US08/028,915 patent/US5432731A/en not_active Expired - Lifetime
-
1994
- 1994-01-19 TW TW083100414A patent/TW240312B/zh active
- 1994-03-03 EP EP19940103153 patent/EP0615247A3/en not_active Withdrawn
- 1994-03-03 KR KR1019940004078A patent/KR940022579A/ko not_active Application Discontinuation
- 1994-03-04 CN CN94102633A patent/CN1037637C/zh not_active Expired - Fee Related
- 1994-03-07 JP JP6059853A patent/JPH0845268A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
CN1037637C (zh) | 1998-03-04 |
US5432731A (en) | 1995-07-11 |
EP0615247A3 (en) | 1994-10-26 |
KR940022579A (ko) | 1994-10-21 |
JPH0845268A (ja) | 1996-02-16 |
CN1101747A (zh) | 1995-04-19 |
EP0615247A2 (en) | 1994-09-14 |