CN103730503B - 横向高耐压晶体管及其制造方法 - Google Patents

横向高耐压晶体管及其制造方法 Download PDF

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CN103730503B
CN103730503B CN201310476163.2A CN201310476163A CN103730503B CN 103730503 B CN103730503 B CN 103730503B CN 201310476163 A CN201310476163 A CN 201310476163A CN 103730503 B CN103730503 B CN 103730503B
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voltage transistor
semiconductor layer
horizontal high
diffusion
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CN103730503A (zh
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吉野学
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
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    • H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
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    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN201310476163.2A 2012-10-12 2013-10-12 横向高耐压晶体管及其制造方法 Active CN103730503B (zh)

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JP2012226555A JP5936513B2 (ja) 2012-10-12 2012-10-12 横型高耐圧トランジスタの製造方法
JP2012-226555 2012-10-12

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CN103730503B true CN103730503B (zh) 2016-08-17

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JP (1) JP5936513B2 (ja)
KR (1) KR101440389B1 (ja)
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DE (1) DE102013215378B4 (ja)

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JP6746010B2 (ja) * 2017-11-13 2020-08-26 三菱電機株式会社 炭化珪素半導体装置、および、炭化珪素半導体装置の製造方法
TWI634658B (zh) * 2017-12-29 2018-09-01 新唐科技股份有限公司 半導體裝置
CN110612598B (zh) * 2018-04-16 2023-02-14 新唐科技日本株式会社 半导体装置
JP7030637B2 (ja) * 2018-07-23 2022-03-07 三菱電機株式会社 半導体装置の製造方法
CN115088082A (zh) * 2020-02-14 2022-09-20 罗姆股份有限公司 半导体装置

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CN1103206A (zh) * 1993-07-12 1995-05-31 菲利浦电子有限公司 带有含漏扩展区的most的高压半导体器件
US5736445A (en) * 1995-07-18 1998-04-07 Siemens Aktiengesellschaft Method for producing at least two transsistors in a semiconductor body
US6049095A (en) * 1997-02-19 2000-04-11 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
CN1518095A (zh) * 2003-01-27 2004-08-04 ��ʽ���������Ƽ� 集成半导体装置及其制造方法
JP2009277775A (ja) * 2008-05-13 2009-11-26 Sharp Corp 半導体装置及びその製造方法

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JPH09266311A (ja) * 1996-01-22 1997-10-07 Fuji Electric Co Ltd 半導体装置及びその製造方法
JP3382163B2 (ja) 1998-10-07 2003-03-04 株式会社東芝 電力用半導体装置
JP2002151687A (ja) 2000-11-15 2002-05-24 Toshiba Corp 高耐圧ｍｏｓ電界効果トランジスタ
JP4703769B2 (ja) * 2009-01-15 2011-06-15 株式会社東芝 半導体装置及びその製造方法
JP2011097080A (ja) * 2009-01-15 2011-05-12 Toshiba Corp 半導体装置の製造方法
JP2011100847A (ja) 2009-11-05 2011-05-19 Sharp Corp 半導体装置及びその製造方法
US8399924B2 (en) * 2010-06-17 2013-03-19 Texas Instruments Incorporated High voltage transistor using diluted drain

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Publication number Priority date Publication date Assignee Title
CN1103206A (zh) * 1993-07-12 1995-05-31 菲利浦电子有限公司 带有含漏扩展区的most的高压半导体器件
US5736445A (en) * 1995-07-18 1998-04-07 Siemens Aktiengesellschaft Method for producing at least two transsistors in a semiconductor body
US6049095A (en) * 1997-02-19 2000-04-11 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
CN1518095A (zh) * 2003-01-27 2004-08-04 ��ʽ���������Ƽ� 集成半导体装置及其制造方法
JP2009277775A (ja) * 2008-05-13 2009-11-26 Sharp Corp 半導体装置及びその製造方法

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US20140103430A1 (en) 2014-04-17
JP2014078649A (ja) 2014-05-01
KR20140047527A (ko) 2014-04-22
US9099551B2 (en) 2015-08-04
CN103730503A (zh) 2014-04-16
DE102013215378B4 (de) 2020-02-13
KR101440389B1 (ko) 2014-09-15
DE102013215378A1 (de) 2014-04-17
JP5936513B2 (ja) 2016-06-22

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