CN103699164B - 半导体集成电路装置 - Google Patents
半导体集成电路装置 Download PDFInfo
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- CN103699164B CN103699164B CN201310446544.6A CN201310446544A CN103699164B CN 103699164 B CN103699164 B CN 103699164B CN 201310446544 A CN201310446544 A CN 201310446544A CN 103699164 B CN103699164 B CN 103699164B
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- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 12
- 229910052753 mercury Inorganic materials 0.000 claims description 11
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- 229910052796 boron Inorganic materials 0.000 description 5
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
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- 229910052698 phosphorus Inorganic materials 0.000 description 2
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- 238000004544 sputter deposition Methods 0.000 description 2
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 description 1
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 description 1
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- 238000004904 shortening Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/0883—Combination of depletion and enhancement field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (4)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012-215034 | 2012-09-27 | ||
JP2012215034A JP6095927B2 (ja) | 2012-09-27 | 2012-09-27 | 半導体集積回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103699164A CN103699164A (zh) | 2014-04-02 |
CN103699164B true CN103699164B (zh) | 2018-04-06 |
Family
ID=50338030
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310446544.6A Expired - Fee Related CN103699164B (zh) | 2012-09-27 | 2013-09-25 | 半导体集成电路装置 |
Country Status (5)
Country | Link |
---|---|
US (2) | US20140084378A1 (zh) |
JP (1) | JP6095927B2 (zh) |
KR (1) | KR102074124B1 (zh) |
CN (1) | CN103699164B (zh) |
TW (1) | TWI612639B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5842720B2 (ja) * | 2012-04-19 | 2016-01-13 | 株式会社ソシオネクスト | 出力回路 |
US9153483B2 (en) * | 2013-10-30 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of semiconductor integrated circuit fabrication |
JP7009033B2 (ja) * | 2018-02-06 | 2022-01-25 | エイブリック株式会社 | 基準電圧発生装置 |
US20220137658A1 (en) * | 2020-10-30 | 2022-05-05 | Ablic Inc. | Semiconductor device with reference voltage circuit |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1348219A (zh) * | 2000-09-19 | 2002-05-08 | 精工电子有限公司 | 参考电压半导体 |
CN101673743A (zh) * | 2008-09-10 | 2010-03-17 | 精工电子有限公司 | 半导体器件 |
CN102208445A (zh) * | 2010-03-29 | 2011-10-05 | 精工电子有限公司 | 具有耗尽型mos晶体管的半导体装置 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5683973A (en) * | 1979-12-12 | 1981-07-08 | Fujitsu Ltd | Manufacture of mos type transistor |
JPS57145372A (en) * | 1981-03-05 | 1982-09-08 | Toshiba Corp | Manufacture of semiconductor device |
JPS58166758A (ja) * | 1982-03-29 | 1983-10-01 | Nec Corp | 半導体装置の製造方法 |
JPH0738447B2 (ja) * | 1989-02-02 | 1995-04-26 | 松下電器産業株式会社 | Mos型半導体装置 |
JPH1012881A (ja) * | 1996-06-20 | 1998-01-16 | Ricoh Co Ltd | 半導体装置およびその製造方法およびmisデバイスおよびその製造方法 |
JP3517343B2 (ja) * | 1998-01-05 | 2004-04-12 | セイコーインスツルメンツ株式会社 | 自己補正型定電流回路 |
JP2000100968A (ja) * | 1998-09-17 | 2000-04-07 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JP2000332237A (ja) * | 1999-05-17 | 2000-11-30 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JP4671459B2 (ja) * | 1999-10-20 | 2011-04-20 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP2002140124A (ja) * | 2000-10-30 | 2002-05-17 | Seiko Epson Corp | 基準電圧回路 |
JP2003152099A (ja) * | 2001-11-19 | 2003-05-23 | Fuji Electric Co Ltd | 半導体集積回路装置 |
US7208383B1 (en) * | 2002-10-30 | 2007-04-24 | Advanced Micro Devices, Inc. | Method of manufacturing a semiconductor component |
US7041540B1 (en) * | 2005-02-01 | 2006-05-09 | Chunghwa Picture Tubes, Ltd. | Thin film transistor and method for fabricating the same |
JP4859754B2 (ja) * | 2007-05-28 | 2012-01-25 | 株式会社リコー | 基準電圧発生回路及び基準電圧発生回路を使用した定電圧回路 |
JP5078502B2 (ja) * | 2007-08-16 | 2012-11-21 | セイコーインスツル株式会社 | 基準電圧回路 |
JP5467849B2 (ja) * | 2008-12-22 | 2014-04-09 | セイコーインスツル株式会社 | 基準電圧回路及び半導体装置 |
JP5202473B2 (ja) * | 2009-08-18 | 2013-06-05 | シャープ株式会社 | 半導体装置の製造方法 |
US20110079861A1 (en) * | 2009-09-30 | 2011-04-07 | Lucian Shifren | Advanced Transistors with Threshold Voltage Set Dopant Structures |
US8324661B2 (en) * | 2009-12-23 | 2012-12-04 | Intel Corporation | Quantum well transistors with remote counter doping |
-
2012
- 2012-09-27 JP JP2012215034A patent/JP6095927B2/ja not_active Expired - Fee Related
-
2013
- 2013-09-06 TW TW102132190A patent/TWI612639B/zh not_active IP Right Cessation
- 2013-09-23 US US14/033,842 patent/US20140084378A1/en not_active Abandoned
- 2013-09-25 CN CN201310446544.6A patent/CN103699164B/zh not_active Expired - Fee Related
- 2013-09-27 KR KR1020130115441A patent/KR102074124B1/ko active IP Right Grant
-
2016
- 2016-08-25 US US15/247,144 patent/US10014294B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1348219A (zh) * | 2000-09-19 | 2002-05-08 | 精工电子有限公司 | 参考电压半导体 |
CN101673743A (zh) * | 2008-09-10 | 2010-03-17 | 精工电子有限公司 | 半导体器件 |
CN102208445A (zh) * | 2010-03-29 | 2011-10-05 | 精工电子有限公司 | 具有耗尽型mos晶体管的半导体装置 |
Also Published As
Publication number | Publication date |
---|---|
TW201428939A (zh) | 2014-07-16 |
TWI612639B (zh) | 2018-01-21 |
KR102074124B1 (ko) | 2020-02-06 |
KR20140041374A (ko) | 2014-04-04 |
US20140084378A1 (en) | 2014-03-27 |
US10014294B2 (en) | 2018-07-03 |
JP2014072235A (ja) | 2014-04-21 |
JP6095927B2 (ja) | 2017-03-15 |
CN103699164A (zh) | 2014-04-02 |
US20160372465A1 (en) | 2016-12-22 |
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TA01 | Transfer of patent application right |
Effective date of registration: 20160331 Address after: Chiba County, Japan Applicant after: DynaFine Semiconductor Co.,Ltd. Address before: Chiba County, Japan Applicant before: Seiko Instruments Inc. |
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CP01 | Change in the name or title of a patent holder |
Address after: Chiba County, Japan Patentee after: ABLIC Inc. Address before: Chiba County, Japan Patentee before: DynaFine Semiconductor Co.,Ltd. |
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