CN103548118A - 制造半导体器件的方法 - Google Patents

制造半导体器件的方法 Download PDF

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Publication number
CN103548118A
CN103548118A CN201180067218.3A CN201180067218A CN103548118A CN 103548118 A CN103548118 A CN 103548118A CN 201180067218 A CN201180067218 A CN 201180067218A CN 103548118 A CN103548118 A CN 103548118A
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CN
China
Prior art keywords
substrate
protective film
manufacturing
semiconductor device
silicon carbide
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Pending
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CN201180067218.3A
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English (en)
Chinese (zh)
Inventor
增田健良
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Publication of CN103548118A publication Critical patent/CN103548118A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H10P95/906—Thermal treatments, e.g. annealing or sintering for altering the shape of semiconductors, e.g. smoothing the surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6349—Deposition of epitaxial materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H10P30/2042—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors into crystalline silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/28—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by an annealing step, e.g. for activation of dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
CN201180067218.3A 2011-03-09 2011-11-15 制造半导体器件的方法 Pending CN103548118A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011050928A JP5659882B2 (ja) 2011-03-09 2011-03-09 半導体装置の製造方法
JP2011-050928 2011-03-09
PCT/JP2011/076267 WO2012120731A1 (ja) 2011-03-09 2011-11-15 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
CN103548118A true CN103548118A (zh) 2014-01-29

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180067218.3A Pending CN103548118A (zh) 2011-03-09 2011-11-15 制造半导体器件的方法

Country Status (7)

Country Link
US (1) US8524585B2 (https=)
EP (1) EP2685488A4 (https=)
JP (1) JP5659882B2 (https=)
KR (1) KR20140031846A (https=)
CN (1) CN103548118A (https=)
TW (1) TW201237968A (https=)
WO (1) WO2012120731A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106952811A (zh) * 2015-12-11 2017-07-14 丰田自动车株式会社 制造半导体装置的方法
CN110199380A (zh) * 2017-01-17 2019-09-03 Zf 腓德烈斯哈芬股份公司 在碳化硅上制造绝缘层的方法
CN110391317A (zh) * 2019-07-29 2019-10-29 通威太阳能（成都）有限公司 一种单晶硅片的绒面制备方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104143503A (zh) * 2013-05-07 2014-11-12 上海凯世通半导体有限公司 掺杂方法
JP6376729B2 (ja) * 2013-05-21 2018-08-22 ローム株式会社 半導体装置の製造方法
CN105161416A (zh) * 2015-09-24 2015-12-16 株洲南车时代电气股份有限公司 一种半导体结构的掺杂方法
JP6853621B2 (ja) * 2016-03-17 2021-03-31 国立大学法人大阪大学 炭化珪素半導体装置の製造方法
JP7697313B2 (ja) * 2021-08-17 2025-06-24 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法

Citations (5)

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JP2001068428A (ja) * 1999-08-26 2001-03-16 Fuji Electric Co Ltd 炭化けい素半導体素子の製造方法
JP2002314071A (ja) * 2001-04-18 2002-10-25 Denso Corp 炭化珪素半導体装置の製造方法
CN101263586A (zh) * 2005-09-16 2008-09-10 克里公司 使用原子氧在碳化硅层上制造氧化层的方法
US20080220620A1 (en) * 2006-12-21 2008-09-11 Fuji Electric Device Technology Co., Ltd. Method of manufacturing silicon carbide semiconductor device
JP2010067917A (ja) * 2008-09-12 2010-03-25 Sumitomo Electric Ind Ltd 半導体装置の製造方法および半導体装置

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US5411907A (en) * 1992-09-01 1995-05-02 Taiwan Semiconductor Manufacturing Company Capping free metal silicide integrated process
JPH0786199A (ja) 1993-09-16 1995-03-31 Fuji Electric Co Ltd 炭化けい素半導体装置の製造方法
KR100327086B1 (ko) * 1994-06-15 2002-03-06 구사마 사부로 박막 반도체 장치의 제조방법, 박막 반도체 장치,액정표시장치 및 전자기기
JP3580052B2 (ja) * 1996-10-17 2004-10-20 株式会社デンソー 炭化珪素半導体装置の製造方法
US5952679A (en) 1996-10-17 1999-09-14 Denso Corporation Semiconductor substrate and method for straightening warp of semiconductor substrate
JP4134575B2 (ja) * 2002-02-28 2008-08-20 松下電器産業株式会社 半導体装置およびその製造方法
US7820534B2 (en) * 2007-08-10 2010-10-26 Mitsubishi Electric Corporation Method of manufacturing silicon carbide semiconductor device
JP2010262952A (ja) * 2009-04-29 2010-11-18 Mitsubishi Electric Corp 炭化珪素半導体装置の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001068428A (ja) * 1999-08-26 2001-03-16 Fuji Electric Co Ltd 炭化けい素半導体素子の製造方法
JP2002314071A (ja) * 2001-04-18 2002-10-25 Denso Corp 炭化珪素半導体装置の製造方法
CN101263586A (zh) * 2005-09-16 2008-09-10 克里公司 使用原子氧在碳化硅层上制造氧化层的方法
US20080220620A1 (en) * 2006-12-21 2008-09-11 Fuji Electric Device Technology Co., Ltd. Method of manufacturing silicon carbide semiconductor device
JP2010067917A (ja) * 2008-09-12 2010-03-25 Sumitomo Electric Ind Ltd 半導体装置の製造方法および半導体装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106952811A (zh) * 2015-12-11 2017-07-14 丰田自动车株式会社 制造半导体装置的方法
TWI630645B (zh) * 2015-12-11 2018-07-21 豐田自動車股份有限公司 半導體裝置的製造方法
CN110199380A (zh) * 2017-01-17 2019-09-03 Zf 腓德烈斯哈芬股份公司 在碳化硅上制造绝缘层的方法
CN110199380B (zh) * 2017-01-17 2023-03-28 Zf 腓德烈斯哈芬股份公司 在碳化硅上制造绝缘层的方法
CN110391317A (zh) * 2019-07-29 2019-10-29 通威太阳能（成都）有限公司 一种单晶硅片的绒面制备方法

Also Published As

Publication number Publication date
US8524585B2 (en) 2013-09-03
KR20140031846A (ko) 2014-03-13
TW201237968A (en) 2012-09-16
EP2685488A1 (en) 2014-01-15
US20120231617A1 (en) 2012-09-13
EP2685488A4 (en) 2014-10-22
WO2012120731A1 (ja) 2012-09-13
JP2012190865A (ja) 2012-10-04
JP5659882B2 (ja) 2015-01-28

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Application publication date: 20140129