CN103525406A - 一种复合薄膜及其制作方法、光电元件和光电设备 - Google Patents
一种复合薄膜及其制作方法、光电元件和光电设备 Download PDFInfo
- Publication number
- CN103525406A CN103525406A CN201310495376.XA CN201310495376A CN103525406A CN 103525406 A CN103525406 A CN 103525406A CN 201310495376 A CN201310495376 A CN 201310495376A CN 103525406 A CN103525406 A CN 103525406A
- Authority
- CN
- China
- Prior art keywords
- quantum dot
- laminated film
- poly
- fluorenes
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002131 composite material Substances 0.000 title abstract description 7
- 238000004519 manufacturing process Methods 0.000 title abstract 4
- 239000002096 quantum dot Substances 0.000 claims abstract description 56
- 150000001875 compounds Chemical class 0.000 claims abstract description 44
- 229920002098 polyfluorene Polymers 0.000 claims abstract description 34
- 239000002904 solvent Substances 0.000 claims abstract description 21
- 150000002220 fluorenes Chemical class 0.000 claims description 47
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 23
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 16
- 230000005693 optoelectronics Effects 0.000 claims description 9
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 8
- 229960001701 chloroform Drugs 0.000 claims description 8
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 8
- 229920000642 polymer Polymers 0.000 claims description 8
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims description 6
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 claims description 6
- PJULCNAVAGQLAT-UHFFFAOYSA-N indeno[2,1-a]fluorene Chemical compound C1=CC=C2C=C3C4=CC5=CC=CC=C5C4=CC=C3C2=C1 PJULCNAVAGQLAT-UHFFFAOYSA-N 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 6
- 229920005603 alternating copolymer Polymers 0.000 claims description 4
- 235000010290 biphenyl Nutrition 0.000 claims description 4
- 239000004305 biphenyl Substances 0.000 claims description 4
- 239000007921 spray Substances 0.000 claims description 4
- IJRGNWOCAVRCOO-UHFFFAOYSA-N 1-hexyl-9h-fluorene Chemical class C1C2=CC=CC=C2C2=C1C(CCCCCC)=CC=C2 IJRGNWOCAVRCOO-UHFFFAOYSA-N 0.000 claims description 3
- OHZAHWOAMVVGEL-UHFFFAOYSA-N 2,2'-bithiophene Chemical compound C1=CSC(C=2SC=CC=2)=C1 OHZAHWOAMVVGEL-UHFFFAOYSA-N 0.000 claims description 3
- AQLJEYYBSZJZAQ-UHFFFAOYSA-N 2-ethenylperoxythiophene Chemical compound C=COOc1cccs1 AQLJEYYBSZJZAQ-UHFFFAOYSA-N 0.000 claims description 3
- 125000003118 aryl group Chemical group 0.000 claims description 3
- 229920001577 copolymer Polymers 0.000 claims description 3
- 229930192474 thiophene Natural products 0.000 claims description 3
- 238000010791 quenching Methods 0.000 abstract description 5
- 239000000243 solution Substances 0.000 abstract 4
- 239000011259 mixed solution Substances 0.000 abstract 2
- 238000005054 agglomeration Methods 0.000 abstract 1
- 230000002776 aggregation Effects 0.000 abstract 1
- 230000000171 quenching effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 8
- 238000005286 illumination Methods 0.000 description 6
- 238000005401 electroluminescence Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 239000003086 colorant Substances 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical class C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000006862 quantum yield reaction Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 229910017115 AlSb Inorganic materials 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004262 HgTe Inorganic materials 0.000 description 1
- -1 InN Chemical compound 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- OBISXEJSEGNNKL-UHFFFAOYSA-N dinitrogen-n-sulfide Chemical compound [N-]=[N+]=S OBISXEJSEGNNKL-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- JVZRCNQLWOELDU-UHFFFAOYSA-N gamma-Phenylpyridine Natural products C1=CC=CC=C1C1=CC=NC=C1 JVZRCNQLWOELDU-UHFFFAOYSA-N 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000004054 semiconductor nanocrystal Substances 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/56—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing sulfur
- C09K11/562—Chalcogenides
- C09K11/565—Chalcogenides with zinc cadmium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
- B05D1/005—Spin coating
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/30—Sulfur-, selenium- or tellurium-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/10—Definition of the polymer structure
- C08G2261/14—Side-groups
- C08G2261/141—Side-chains having aliphatic units
- C08G2261/1412—Saturated aliphatic units
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
- C08G2261/31—Monomer units or repeat units incorporating structural elements in the main chain incorporating aromatic structural elements in the main chain
- C08G2261/314—Condensed aromatic systems, e.g. perylene, anthracene or pyrene
- C08G2261/3142—Condensed aromatic systems, e.g. perylene, anthracene or pyrene fluorene-based, e.g. fluorene, indenofluorene, or spirobifluorene
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/50—Physical properties
- C08G2261/52—Luminescence
- C08G2261/522—Luminescence fluorescent
- C08G2261/5222—Luminescence fluorescent electrofluorescent
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/90—Applications
- C08G2261/95—Use in organic luminescent diodes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/30—Sulfur-, selenium- or tellurium-containing compounds
- C08K2003/3009—Sulfides
- C08K2003/3036—Sulfides of zinc
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/14—Macromolecular compounds
- C09K2211/1408—Carbocyclic compounds
- C09K2211/1416—Condensed systems
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/115—Polyfluorene; Derivatives thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Luminescent Compositions (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
本发明实施例提供了一种复合薄膜及其制作方法、光电元件和光电设备,涉及制作领域,可以避免团聚和荧光猝灭现象。所述复合薄膜的制作方法,包括:配置聚芴类化合物溶液,其中所述聚芴类化合物包括聚芴或聚芴衍生物;配置量子点溶液;将所述聚芴类化合物溶液和所述量子点溶液混合在一起制成混合溶液;去除所述混合溶液中的溶剂,制备成复合薄膜。
Description
技术领域
本发明涉及制作领域,尤其涉及一种复合薄膜及其制作方法、光电元件和光电设备。
背景技术
目前,复合薄膜在显示和照明中的应用将成为未来显示和照明技术的新方向。众所周知,白光是利用红绿蓝黄等颜色组合而得到的,通常,各种颜色是由各自对应的发光材料实现的,这些材料可以通过共掺杂实现白光。
近年来,出现了一种新型的半导体纳米材料--量子点(quantum dots),又称半导体纳米晶体,尺寸在1-10nm。由于量子尺寸效应和介电限域效应使量子点具有独特的光致发光和电致发光性能。与传统的有机荧光染料相比,量子点具有量子产率高,光化学稳定性高,不易光解,以及宽激发、窄发射,高色纯度、发光颜色可通过控制量子点大小进行调节等优良的光学特性。故现有技术中常采用量子点来实现白光。有一种发白光的薄膜,就是由多种不同颜色的量子点混合得到,但是在实现白光时,量子点之间容易出现团聚和荧光猝灭现象。
发明内容
本发明的实施例提供一种复合薄膜及其制作方法、光电元件和光电设备,可以避免团聚和荧光猝灭现象。
为达到上述目的,本发明的实施例采用如下技术方案:
一种复合薄膜的制作方法,包括:
配置聚芴类化合物溶液,其中所述聚芴类化合物溶液中包括聚芴或聚芴衍生物;
配置量子点溶液,其中所述量子点溶液中包括量子点;
将所述聚芴类化合物溶液和所述量子点溶液混合在一起制成混合溶液;
去除所述混合溶液中的溶剂,制备成复合薄膜。
可选的,所述聚芴衍生物包括:聚(9,9-二烷基芴),双己基芴与蒽的共聚物,侧链含枝状联苯,四烷基取代的茚并芴聚合物,芳香基取代的茚并芴聚合物,聚芴联噻吩交替共聚物,以及,芴与噻吩, 乙烯基二氧噻吩,4.7-二噻吩-2,1,3-苯并噻二唑,4.7-二噻吩-2,1,3-苯并硒二唑的二元及三元无规共聚物。
可选的,所述量子点包括II-VI族元素化合物或III-V族元素化合物。
可选的,所述聚芴类化合物溶液的浓度为3%-25%;所述量子点溶液的浓度为4mg/ml-30mg/ml;
所述混合溶液中所述聚芴类化合物溶液占50%-90%,所述量子点溶液占10%-50%。
可选的,所述聚芴类化合物溶液中的溶剂为甲苯、氯苯或三氯甲烷,所述量子点溶液中的溶剂为甲苯、氯苯或三氯甲烷。
优选的,所述聚芴类化合物溶液中的溶剂为甲苯,所述量子点溶液中的溶剂为甲苯。
可选的,所述去除所述混合溶液中的溶剂,制备成复合薄膜,包括:
将所述混合溶液通过旋涂、喷墨打印或印刷的方法制备成膜后,去除溶剂制备成复合薄膜。
一种复合薄膜,采用上述的制作方法制作而成。
可选的,所述复合薄膜中的所述聚芴类化合物,与所述量子点的质量比取值范围为400:1-5:1,其中所述聚芴类化合物包括聚芴或聚芴衍生物。
一种光电元件,所述光电设备包括上述的复合薄膜。
一种光电设备,包括上述的光电元件。
本发明实施例提供的上述技术方案中,使用发蓝光的聚芴及其衍生物作为基体,与发红光的量子点复合成膜,采用聚芴或聚芴衍生物做白色光谱中低波长部分,量子点做长波长部分,通过补偿发光实现白光。只需利用物理的颜色互补原理,得到发白光的薄膜;通过控制荧光高分子(聚芴或聚芴衍生物)与量子点的比例可以得到所需的色域值,还可以避免目前采用量子点混合法实现白光时出现的团聚和荧光猝灭现象;并且聚芴或聚芴衍生物以及量子点材料的选择性广,适用范围大。通过本发明提供的制作方法制成的复合薄膜均匀性好,可以根据量子点的光谱可以选择不同的高分子材料,适用性广。
附图说明
图1为本发明实施例提供的一种复合薄膜的制作方法的流程示意图。
具体实施方式
下面结合附图对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。
本发明实施例提供了一种复合薄膜的制作方法,如图1所示,所述制作方法包括以下步骤:
S1、配置聚芴类化合物溶液。
可选的,所述聚芴类化合物溶液中的溶剂包括甲苯、氯苯或三氯甲烷,优选的,所述聚芴类化合物溶液中的溶剂包括甲苯;所述聚芴类化合物溶液中的溶质为聚芴或聚芴衍生物。所述聚芴类化合物溶液的浓度为3%-25%。
可选的,所述聚芴衍生物包括:P17(聚(9,9-二烷基芴)),P18(双己基芴与蒽的共聚物),P19(侧链含枝状联苯),P21a(四烷基取代的茚并芴聚合物),P21b(芳香基取代的茚并芴聚合物),P22a(蒽-烷基芴发射嵌段的两端联接三苯胺),P22b(蒽-烷基芴发射嵌段的两端联接恶二唑),P23(聚芴联噻吩交替共聚物),P24(辛基双取代芴与苯并噻二唑交替共聚物),P25(主链上联接铱配合物与苯基吡啶的共聚物);以及,芴与噻吩(Th);乙烯基二氧噻吩(EDT);4,7-二噻吩-2,1,3-苯并噻二唑(DBT);4,7-二噻吩-2,1,3-苯并硒二唑(BTSe)的二元及三元无规共聚物。
聚芴及其衍生物具有较大的能带间隙,为发蓝光的材料,其由于含有一刚性的平面内联苯单元,具有较高的热稳定性和化学稳定性,这样就可以使制作出来的复合薄膜具有更高的热稳定性和化学稳定性,聚芴及其衍生物在固态时具有较高的荧光量子产率(0.6-0.8),可以使复合薄膜具有较高的荧光效率,增强荧光强度。
S2、配置量子点溶液。
可选的,所述量子点溶液中的溶剂包括甲苯、氯苯或三氯甲烷,优选的,所述量子点溶液中的溶剂包括甲苯,所述量子点溶液中的溶质为量子点,所述量子点溶液的浓度为4mg/ml-30mg/ml。
本发明实施例中的量子点是由II-Vl族元素化合物或III-V族元 素化合物组成的纳米颗粒。其中由II-VI族元素化合物组成的纳米颗粒为由II族元素Zn,Cd,Hg和Ⅵ族元素S,Se,Te所形成的化合物半导体材料,II-VI族元素化合物的表示式为A(II)B(VI),即ZnS,ZnSe,ZnTe,CdS,CdSe,CdTe,HgS,HgSe和HgTe;由III-V族元素化合物组成的纳米颗粒为由III族的B,Al,Ga,In和V族的N,P,As,Sb形成的化合物半导体材料,III-V族元素化合物的表示式为A(III)B(V),如BN,BP,BAs,BSb,AlN,AlP,AlAs,AlSb,GaN,GaP,GaAs,GaSb,InAs,InN,InP和InSb。
优选的,所述聚芴类化合物溶液的浓度为5%-15%。所述量子点溶液的浓度为5mg/ml-15mg/ml。
S3、将所述聚芴类化合物溶液和所述量子点溶液混合在一起制成混合溶液。
将步骤S1配置出的所述聚芴类化合物溶液和步骤S2配置出的所述量子点溶液按照一定的比例混合在一起。
可选的,在所述聚芴类化合物溶液的浓度为3%-25%,所述量子点溶液的浓度为4mg/ml-30mg/ml的情况下,所述一定的比例为所述聚芴类化合物溶液:所述量子点溶液=9:1-1:1。即所述混合溶液中所述聚芴类化合物溶液占50%-90%,所述量子点占10%-50%。
S4、去除所述混合溶液中的溶剂,制备成复合薄膜。
在步骤S3制作出所述混合溶液后,可以将所述混合溶液通过、喷墨打印或印刷的方法制备成膜后,去除溶剂制备成复合薄膜。
通过旋涂的方法制备成复合薄膜的步骤如下:用旋涂仪将混合溶液滴加在基片上,驱动所述基片以一定转速旋转使所述混合溶液均匀铺展成薄膜,最后通过真空蒸发或高温蒸发的手段除去溶剂(即甲苯、氯苯或三氯甲烷),形成所述复合薄膜。
通过喷墨打印或印刷的方法制备成复合薄膜的步骤如下:可以利用喷墨打印机或印刷机将混合溶液打印在基片上,然后通过真空蒸发或高温蒸发的手段除去溶剂(即甲苯、氯苯或三氯甲烷),形成所述复合薄膜。
示例的,将发射波谱在450nm的聚芴类化合物溶液(浓度为12%)与发射峰在620nm的ZnS量子点溶液按3:1混合,通过旋涂的方法以3000rpm的转速,旋涂30s,再加热除去溶剂,即可制备出所述复合薄 膜。
在通过步骤S4制作完成复合薄膜后,可以通过蓝色LED灯照射所述复合薄膜,所述复合薄膜就可以发白光,当然,也可以加电使所述复合薄膜就可以发白光。
本发明制备方法简单,使用发蓝光的聚芴及其衍生物作为基体,与发红光的量子点复合成膜,采用聚芴或聚芴衍生物做白色光谱中低波长部分,量子点做长波长部分,通过补偿发光实现白光。只需利用物理的颜色互补原理,得到发白光的薄膜;并且聚芴或聚芴衍生物以及量子点材料的选择性广,适用范围大。
本发明制作简单,通过控制荧光高分子(聚芴或聚芴衍生物)与量子点的比例可以得到所需的色域值,可以避免了目前采用量子点混合法实现白光时出现的团聚和荧光猝灭现象;通过本发明提供的制作方法制成的复合薄膜均匀性好,可以根据量子点的光谱可以选择不同的聚芴或聚芴衍生物,示例的,如对于量子点CdSe,如果选择不同的聚芴或聚芴衍生物,则制作成的复合薄膜经蓝光照射或加电后,可以发出不同色域的白光,可以适用不同的环境中。
本发明实施例中还提供了一种复合薄膜,所述符合薄膜采用上述的制作方法制作而成,所述复合薄膜包括:聚芴或聚芴衍生物,以及量子点,其中,所述聚芴或聚芴衍生物,与所述量子点的质量比的取值范围包括400:1-5:1。
优选的,所述聚芴或聚芴衍生物,与量子点的质量比的取值范围为120:1-10:1。
本发明实施例还提供了包括上述复合薄膜的光电元件,所述光电元件可以是:光电转换器件、彩膜、背光源、偏光片、发光层等。
本发明实施例还提供了一种光电设备,所述光电设备包括上述的复合薄膜,可以是:照明装置,液晶显示面板、电子纸、OLED(Organic Electroluminesence Display,有机电致发光显示)面板、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有照明或显示功能的产品或部件等。
可选的,在所述复合薄膜上加电,使所述复合薄膜发光,故可以用所述复合薄膜来制作光电转换器件,进行光电转换。
可选的,可以将所述复合薄膜应用于具有照明功能的产品或部件, 示例的,可以加电或蓝光照射使所述复合薄膜发白光,应用于照明设备。
或者,可以将所述复合薄膜制作成发光层,应用到有机电致发光器件中。示例的,所述有机电致发光器件中的发光层为所述复合薄膜,加电后,所述有机电致发光器件发白光。
或者,可以加电或蓝光照射使所述复合薄膜发白光,可以作为背光源应用于液晶显示面板等具有显示功能的产品或部件中。
以上所述,仅为本发明的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本发明的保护范围之内。因此,本发明的保护范围应所述以权利要求的保护范围为准。
Claims (11)
1.一种复合薄膜的制作方法,其特征在于,包括:
配置聚芴类化合物溶液,其中所述聚芴类化合物包括聚芴或聚芴衍生物;
配置量子点溶液;
将所述聚芴类化合物溶液和所述量子点溶液混合在一起制成混合溶液;
去除所述混合溶液中的溶剂,制备成复合薄膜。
2.根据权利要求1所述的制作方法,其特征在于,所述聚芴衍生物包括:聚(9,9-二烷基芴),双己基芴与蒽的共聚物,侧链含枝状联苯,四烷基取代的茚并芴聚合物,芳香基取代的茚并芴聚合物,聚芴联噻吩交替共聚物,以及,芴与噻吩,乙烯基二氧噻吩,4.7-二噻吩-2,1,3-苯并噻二唑,4.7-二噻吩-2,1,3-苯并硒二唑的二元及三元无规共聚物。
3.根据权利要求1所述的制作方法,其特征在于,所述量子点包括II-VI族元素化合物或III-V族元素化合物。
4.根据权利要求1所述的制作方法,其特征在于,所述聚芴类化合物溶液的浓度为3%-25%;所述量子点溶液的浓度为4mg/ml-30mg/ml;
所述混合溶液中所述聚芴类化合物溶液占50%-90%,所述量子点溶液占10%-50%。
5.根据权利要求1所述的制作方法,其特征在于,所述聚芴类化合物溶液中的溶剂为甲苯、氯苯或三氯甲烷,所述量子点溶液中的溶剂为甲苯、氯苯或三氯甲烷。
6.根据权利要求5所述的制作方法,其特征在于,所述聚芴类化合物溶液中的溶剂为甲苯,所述量子点溶液中的溶剂为甲苯。
7.根据权利要求1所述的制作方法,其特征在于,所述去除所述混合溶液中的溶剂,制备成复合薄膜,包括:
将所述混合溶液通过旋涂、喷墨打印或印刷的方法制备成膜后,去除溶剂制备成复合薄膜。
8.一种复合薄膜,其特征在于,采用权利要求1-7任意一项所述的制作方法制作而成。
9.根据权利要求8所述的复合薄膜,其特征在于,所述复合薄膜中的所述聚芴类化合物,与所述量子点的质量比取值范围为400:1-5:1,其中所述聚芴类化合物包括聚芴或聚芴衍生物。
10.一种光电元件,其特征在于,包括权利要求8或9所述的复合薄膜。
11.一种光电设备,其特征在于,所述光电设备包括权利要求10所述的光电元件。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310495376.XA CN103525406B (zh) | 2013-10-21 | 2013-10-21 | 一种复合薄膜及其制作方法、光电元件和光电设备 |
PCT/CN2014/083081 WO2015058567A1 (zh) | 2013-10-21 | 2014-07-25 | 复合薄膜及其制作方法、光电元件和光电设备 |
US14/426,811 US9828544B2 (en) | 2013-10-21 | 2014-07-25 | Composite film and fabrication method thereof, photoelectric element and photoelectric apparatus |
US15/787,207 US10287493B2 (en) | 2013-10-21 | 2017-10-18 | Composite film and fabrication method thereof, photoelectric element and photoelectric apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310495376.XA CN103525406B (zh) | 2013-10-21 | 2013-10-21 | 一种复合薄膜及其制作方法、光电元件和光电设备 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103525406A true CN103525406A (zh) | 2014-01-22 |
CN103525406B CN103525406B (zh) | 2015-08-26 |
Family
ID=49927767
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310495376.XA Active CN103525406B (zh) | 2013-10-21 | 2013-10-21 | 一种复合薄膜及其制作方法、光电元件和光电设备 |
Country Status (3)
Country | Link |
---|---|
US (2) | US9828544B2 (zh) |
CN (1) | CN103525406B (zh) |
WO (1) | WO2015058567A1 (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103779509A (zh) * | 2014-01-27 | 2014-05-07 | 京东方科技集团股份有限公司 | 发光器件及其制作方法和显示面板 |
CN104882554A (zh) * | 2015-04-30 | 2015-09-02 | 中国科学院半导体研究所 | 一种无机有机杂化电致发光元件及其制造方法 |
CN105219163A (zh) * | 2015-10-16 | 2016-01-06 | Tcl集团股份有限公司 | 一种喷墨打印用的量子点油墨及制备方法与量子点发光层 |
CN105425568A (zh) * | 2016-01-04 | 2016-03-23 | 京东方科技集团股份有限公司 | 记录介质及其制造方法、全息记录、再现装置和全息系统 |
WO2017049785A1 (zh) * | 2015-09-24 | 2017-03-30 | 深圳市华星光电技术有限公司 | 量子点偏光片及其制作方法 |
CN108129661A (zh) * | 2018-01-03 | 2018-06-08 | 京东方科技集团股份有限公司 | 一种聚合物、量子点膜层及其制备方法 |
CN109298581A (zh) * | 2018-11-09 | 2019-02-01 | 电子科技大学 | 一种半导体量子点-液晶复合结构器件的制备方法 |
US10287493B2 (en) | 2013-10-21 | 2019-05-14 | Boe Technology Group Co., Ltd. | Composite film and fabrication method thereof, photoelectric element and photoelectric apparatus |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103500803B (zh) * | 2013-10-21 | 2016-06-08 | 京东方科技集团股份有限公司 | 一种复合发光层及其制作方法、白光有机电致发光器件 |
CN105278153B (zh) * | 2015-11-13 | 2018-03-06 | 深圳市华星光电技术有限公司 | 量子点彩膜基板的制备方法及量子点彩膜基板 |
US11370879B2 (en) | 2018-12-14 | 2022-06-28 | International Business Machines Corporation | Solution-processable indenofluorenes and methods to generate solution-processable indenofluorenes |
US11515445B2 (en) * | 2019-02-26 | 2022-11-29 | Opulence Optronics Co., Ltd | Core-shell type quantum dots and method of forming the same |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102295745A (zh) * | 2011-07-06 | 2011-12-28 | 上海大学 | 氧化锌量子点改性的聚芴类蓝色高分子发光材料的制备方法 |
Family Cites Families (65)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5998045A (en) | 1997-07-03 | 1999-12-07 | International Business Machines Corporation | Polymeric light-emitting device |
JP2002215065A (ja) | 2000-11-02 | 2002-07-31 | Seiko Epson Corp | 有機エレクトロルミネッセンス装置及びその製造方法、並びに電子機器 |
IL146226A0 (en) * | 2001-10-29 | 2002-12-01 | Yissum Res Dev Co | Near infra-red composite polymer-nanocrystal materials and electro-optical devices produced therefrom |
KR100478524B1 (ko) | 2002-06-28 | 2005-03-28 | 삼성에스디아이 주식회사 | 고분자 및 저분자 발광 재료의 혼합물을 발광 재료로사용하는 유기 전계 발광 소자 |
GB0226010D0 (en) | 2002-11-08 | 2002-12-18 | Cambridge Display Tech Ltd | Polymers for use in organic electroluminescent devices |
US7132787B2 (en) | 2002-11-20 | 2006-11-07 | The Regents Of The University Of California | Multilayer polymer-quantum dot light emitting diodes and methods of making and using thereof |
GB0302550D0 (en) | 2003-02-05 | 2003-03-12 | Cambridge Display Tech Ltd | Organic optoelectronic device |
US6909233B2 (en) | 2003-06-11 | 2005-06-21 | Eastman Kodak Company | Stacked OLED display having improved efficiency |
US6917159B2 (en) | 2003-08-14 | 2005-07-12 | Eastman Kodak Company | Microcavity OLED device |
KR100632632B1 (ko) | 2004-05-28 | 2006-10-12 | 삼성전자주식회사 | 나노 결정의 다층 박막 제조 방법 및 이를 이용한유·무기 하이브리드 전기 발광 소자 |
CN1595670B (zh) | 2004-06-25 | 2011-12-28 | 清华大学 | 宽谱白光led的量子点有源区结构及其外延生长方法 |
JP2006286664A (ja) | 2005-03-31 | 2006-10-19 | Toshiba Corp | 有機エレクトロルミネッセンス素子 |
CN1743361A (zh) | 2005-09-22 | 2006-03-08 | 复旦大学 | 一种无机半导体纳米晶与共轭聚合物杂化材料及其制备方法 |
CN100519689C (zh) | 2005-11-02 | 2009-07-29 | 苏州大学 | 发光功能性复合材料及其制备方法 |
KR20080069085A (ko) | 2007-01-22 | 2008-07-25 | 삼성전자주식회사 | 탠덤 구조의 나노점 발광 다이오드 및 그 제조 방법 |
US20080278063A1 (en) | 2007-05-07 | 2008-11-13 | Cok Ronald S | Electroluminescent device having improved power distribution |
JP2008283021A (ja) | 2007-05-11 | 2008-11-20 | Seiko Epson Corp | 有機電子デバイス |
KR20090002787A (ko) | 2007-07-04 | 2009-01-09 | 삼성전자주식회사 | 트랜지스터 구조를 이용한 발광소자 및 수광소자 |
JP5267009B2 (ja) | 2007-09-28 | 2013-08-21 | 大日本印刷株式会社 | 発光デバイス |
JP2009087744A (ja) | 2007-09-28 | 2009-04-23 | Dainippon Printing Co Ltd | 発光素子 |
CN101255336B (zh) | 2007-11-06 | 2011-04-27 | 华南理工大学 | 电致发光光谱稳定的蓝色芴类聚合物及其制备方法与应用 |
CN101197428A (zh) | 2007-12-04 | 2008-06-11 | 电子科技大学 | 一种白光有机电致发光器件及其制备方法 |
EP2224534B1 (en) | 2007-12-12 | 2015-09-30 | Sharp Kabushiki Kaisha | Photosensitized solar cell module and method for manufacturing the same |
KR101475520B1 (ko) | 2008-01-14 | 2014-12-23 | 삼성전자주식회사 | 잉크젯 프린트용 양자점 잉크 조성물 및 그를 이용한전자소자 |
CN101219921A (zh) | 2008-01-18 | 2008-07-16 | 北京大学 | 一种共轭树枝状电致纯蓝光材料及其制备方法和应用 |
CN101307865A (zh) | 2008-05-06 | 2008-11-19 | 孙润光 | 一种光源装置 |
KR20110009702A (ko) | 2008-05-13 | 2011-01-28 | 리써치 트라이앵글 인스티튜트 | 다공질 및 비다공질 나노구조체 및 이의 용도 |
US20090308456A1 (en) | 2008-06-13 | 2009-12-17 | Interuniversitair Microelektronica Centrum (Imec) | Photovoltaic Structures and Method to Produce the Same |
CN101314665B (zh) | 2008-06-23 | 2010-12-15 | 苏州大学 | 一种光电纳米复合材料及其制备 |
CN101328303B (zh) | 2008-06-23 | 2011-04-20 | 苏州大学 | 一种具有推拉电子结构的光电纳米复合材料及制备 |
US8578426B2 (en) | 2008-09-10 | 2013-11-05 | Qualcomm Incorporated | Method and system for selecting media content for broadcast based on viewer preference indications |
US8164083B2 (en) | 2008-10-14 | 2012-04-24 | Brother International Corporation | Quantum dot optoelectronic devices with enhanced performance |
US8642991B2 (en) | 2008-11-11 | 2014-02-04 | Samsung Electronics Co., Ltd. | Photosensitive quantum dot, composition comprising the same and method of forming quantum dot-containing pattern using the composition |
US8360617B2 (en) | 2008-11-25 | 2013-01-29 | Samsung Electronics Co., Ltd. | Lighting system including LED with glass-coated quantum-dots |
JP5126545B2 (ja) | 2009-02-09 | 2013-01-23 | ソニー株式会社 | 表示装置の製造方法 |
KR101652789B1 (ko) | 2009-02-23 | 2016-09-01 | 삼성전자주식회사 | 다중 양자점층을 가지는 양자점 발광소자 |
WO2010120900A1 (en) | 2009-04-15 | 2010-10-21 | Research Triangle Institute | Stimulated lighting devices |
JP5836935B2 (ja) | 2009-05-29 | 2015-12-24 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングMerck Patent Gesellschaft mit beschraenkter Haftung | 共役ポリマーおよび有機半導体としてのそれらの使用 |
WO2011002509A1 (en) | 2009-06-30 | 2011-01-06 | Tiecheng Alex Qiao | Semiconductor nanocrystals used with led sources |
WO2011014181A1 (en) * | 2009-07-31 | 2011-02-03 | Hewlett-Packard Development Company, | Emissive semi-interpenetrating polymer networks |
KR101274068B1 (ko) | 2010-05-25 | 2013-06-12 | 서울대학교산학협력단 | 양자점 발광 소자 및 이를 이용한 디스플레이 |
WO2011161425A1 (en) | 2010-06-25 | 2011-12-29 | Cambridge Display Technonogy Limited | Organic light-emitting device and method |
CN101937975A (zh) | 2010-08-20 | 2011-01-05 | 电子科技大学 | 一种有机/无机复合发光二极管及其制备方法 |
KR101407209B1 (ko) * | 2010-10-07 | 2014-06-16 | 포항공과대학교 산학협력단 | 미세 패턴 형성 방법 및 이를 이용한 미세 채널 트랜지스터 및 미세 채널 발광트랜지스터의 형성방법 |
SG2014014286A (en) | 2011-10-31 | 2014-04-28 | Univ Nanyang Tech | A light-emitting device |
WO2013078247A1 (en) | 2011-11-22 | 2013-05-30 | Qd Vision, Inc. | Methods of coating semiconductor nanocrystals, semiconductor nanocrystals, and products including same |
KR20130065320A (ko) | 2011-12-09 | 2013-06-19 | 삼성전자주식회사 | 이종의 양자점층을 구비하는 양자점 소자 |
US9318721B2 (en) | 2012-01-27 | 2016-04-19 | Wake Forest University | Field induced polymer electroluminescent (FIPEL) device |
KR101476907B1 (ko) | 2012-04-10 | 2014-12-26 | 포항공과대학교 산학협력단 | 일체형 전도성 기판 및 이를 채용한 전자 소자 |
US9972802B2 (en) | 2012-04-20 | 2018-05-15 | Konica Minolta, Inc. | Organic electroluminescent element |
KR101787539B1 (ko) | 2012-05-29 | 2017-10-18 | 광주과학기술원 | 아민기를 갖는 비공액 고분자를 포함하는 유기전자소자용 기능층 및 이를 포함하는 유기전자소자 |
CN102723440A (zh) | 2012-06-26 | 2012-10-10 | 吉林大学 | 基于补偿发光的ZnCuInS/ZnS量子点白光LED及其制作方法 |
KR20140010719A (ko) | 2012-07-16 | 2014-01-27 | 삼성전자주식회사 | 전하응집을 이용한 발광소자 및 그 제조방법 |
JP5964744B2 (ja) | 2012-12-26 | 2016-08-03 | 富士フイルム株式会社 | 半導体膜の製造方法 |
US9559322B2 (en) | 2013-04-05 | 2017-01-31 | Samsung Display Co., Ltd. | Quantum dots, methods of manufacturing quantum dots and methods of manufacturing organic light emitting display devices using the same |
CN103323975B (zh) | 2013-06-08 | 2015-09-23 | 北京京东方光电科技有限公司 | 一种阵列基板、液晶显示面板及显示装置 |
CN103421513B (zh) | 2013-08-16 | 2015-01-28 | 京东方科技集团股份有限公司 | 一种白光量子点复合颗粒及其制备方法 |
CN103474451A (zh) | 2013-09-12 | 2013-12-25 | 深圳市华星光电技术有限公司 | 彩色oled器件及其制作方法 |
US10700283B2 (en) | 2013-10-04 | 2020-06-30 | Nissan Chemical Industries, Ltd. | Aniline derivatives and uses thereof |
CN103500803B (zh) | 2013-10-21 | 2016-06-08 | 京东方科技集团股份有限公司 | 一种复合发光层及其制作方法、白光有机电致发光器件 |
CN103525406B (zh) | 2013-10-21 | 2015-08-26 | 京东方科技集团股份有限公司 | 一种复合薄膜及其制作方法、光电元件和光电设备 |
CN103779509A (zh) | 2014-01-27 | 2014-05-07 | 京东方科技集团股份有限公司 | 发光器件及其制作方法和显示面板 |
CN103904178B (zh) | 2014-04-11 | 2016-08-17 | 浙江大学 | 量子点发光器件 |
CN104201289B (zh) | 2014-08-07 | 2017-02-08 | 京东方科技集团股份有限公司 | 一种像素单元及其制作方法、显示面板、显示装置 |
CN104377318A (zh) | 2014-09-25 | 2015-02-25 | 京东方科技集团股份有限公司 | 有机电致发光器件及其制备方法、显示基板、显示装置 |
-
2013
- 2013-10-21 CN CN201310495376.XA patent/CN103525406B/zh active Active
-
2014
- 2014-07-25 US US14/426,811 patent/US9828544B2/en active Active
- 2014-07-25 WO PCT/CN2014/083081 patent/WO2015058567A1/zh active Application Filing
-
2017
- 2017-10-18 US US15/787,207 patent/US10287493B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102295745A (zh) * | 2011-07-06 | 2011-12-28 | 上海大学 | 氧化锌量子点改性的聚芴类蓝色高分子发光材料的制备方法 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10287493B2 (en) | 2013-10-21 | 2019-05-14 | Boe Technology Group Co., Ltd. | Composite film and fabrication method thereof, photoelectric element and photoelectric apparatus |
CN103779509A (zh) * | 2014-01-27 | 2014-05-07 | 京东方科技集团股份有限公司 | 发光器件及其制作方法和显示面板 |
US9716230B2 (en) | 2014-01-27 | 2017-07-25 | Boe Technology Group Co., Ltd. | Light emitting device, production method thereof, and display panel |
CN104882554A (zh) * | 2015-04-30 | 2015-09-02 | 中国科学院半导体研究所 | 一种无机有机杂化电致发光元件及其制造方法 |
WO2017049785A1 (zh) * | 2015-09-24 | 2017-03-30 | 深圳市华星光电技术有限公司 | 量子点偏光片及其制作方法 |
CN105219163A (zh) * | 2015-10-16 | 2016-01-06 | Tcl集团股份有限公司 | 一种喷墨打印用的量子点油墨及制备方法与量子点发光层 |
CN105425568A (zh) * | 2016-01-04 | 2016-03-23 | 京东方科技集团股份有限公司 | 记录介质及其制造方法、全息记录、再现装置和全息系统 |
CN105425568B (zh) * | 2016-01-04 | 2018-06-19 | 京东方科技集团股份有限公司 | 全息记录介质及其制造方法、全息记录、再现装置和全息系统 |
CN108129661A (zh) * | 2018-01-03 | 2018-06-08 | 京东方科技集团股份有限公司 | 一种聚合物、量子点膜层及其制备方法 |
US11233212B2 (en) | 2018-01-03 | 2022-01-25 | Boe Technology Group Co., Ltd. | Polymer, quantum dots film layer and preparation method thereof |
CN109298581A (zh) * | 2018-11-09 | 2019-02-01 | 电子科技大学 | 一种半导体量子点-液晶复合结构器件的制备方法 |
CN109298581B (zh) * | 2018-11-09 | 2020-03-27 | 电子科技大学 | 一种半导体量子点-液晶复合结构器件的制备方法 |
Also Published As
Publication number | Publication date |
---|---|
US9828544B2 (en) | 2017-11-28 |
US20150329774A1 (en) | 2015-11-19 |
US10287493B2 (en) | 2019-05-14 |
CN103525406B (zh) | 2015-08-26 |
WO2015058567A1 (zh) | 2015-04-30 |
US20180037814A1 (en) | 2018-02-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103525406B (zh) | 一种复合薄膜及其制作方法、光电元件和光电设备 | |
CN103500803B (zh) | 一种复合发光层及其制作方法、白光有机电致发光器件 | |
CN105096749B (zh) | 一种显示装置及其制备方法 | |
CN103345884B (zh) | 双面显示装置及其制备方法 | |
US20190189698A1 (en) | Semiconducting particles in electronic elements | |
US8836212B2 (en) | Light emissive printed article printed with quantum dot ink | |
CN103779509A (zh) | 发光器件及其制作方法和显示面板 | |
CN104297984A (zh) | 彩膜基板及其制作方法、液晶显示装置 | |
CN103268736B (zh) | 一种量子点led显示面板及显示装置 | |
CA2910550C (en) | Light emitting material and method for production thereof | |
CN104143564A (zh) | 一种oled面板及显示装置 | |
CN203250739U (zh) | 一种有机电致发光二极管显示装置 | |
CN104696752A (zh) | 一种发光二极管光源、背光模组、显示装置和照明装置 | |
Lee et al. | 46.1: Invited Paper: Recent Progress of Light‐Emitting Diodes Based on Colloidal Quantum Dots | |
KR20140093377A (ko) | 전계 발광 조성물, 이의 제조방법 및 이를 포함하는 전계 발광 장치 | |
JP5118504B2 (ja) | 発光素子 | |
Kanehiro et al. | 64‐1: Invited Paper: Challenges for Realizing QD‐LED Display | |
CN210224035U (zh) | 一种白光Micro LED结构 | |
Wei et al. | P‐9.12: Hybrid Full Color Micro‐LED Displays with Quantum Dots | |
Liu et al. | Red-Emitting Carbon Dots for MicroLED Application | |
KR20050087444A (ko) | 평면 백색 발광 소자 | |
CN117821061A (zh) | 量子点气凝胶、量子点固化胶、量子点光学膜及其制备方法、显示设备 | |
CN102082215A (zh) | 单芯片式白光发光二极管元件 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |