CN103503114B - 具有纳米图案的透明衬底及其制造方法 - Google Patents

具有纳米图案的透明衬底及其制造方法 Download PDF

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Publication number
CN103503114B
CN103503114B CN201280021740.2A CN201280021740A CN103503114B CN 103503114 B CN103503114 B CN 103503114B CN 201280021740 A CN201280021740 A CN 201280021740A CN 103503114 B CN103503114 B CN 103503114B
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CN
China
Prior art keywords
pattern
transparent substrate
area
substrate
mold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201280021740.2A
Other languages
English (en)
Chinese (zh)
Other versions
CN103503114A (zh
Inventor
李俊
刘庆钟
李领宰
金镇秀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN103503114A publication Critical patent/CN103503114A/zh
Application granted granted Critical
Publication of CN103503114B publication Critical patent/CN103503114B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/002—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor using materials containing microcapsules; Preparing or processing such materials, e.g. by pressure; Devices or apparatus specially designed therefor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0313—Organic insulating material
    • H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
    • H05K1/036—Multilayers with layers of different types
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04112—Electrode mesh in capacitive digitiser: electrode for touch sensing is formed of a mesh of very fine, normally metallic, interconnected lines that are almost invisible to see. This provides a quite large but transparent electrode surface, without need for ITO or similar transparent conductive material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24612—Composite web or sheet

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nanotechnology (AREA)
  • Human Computer Interaction (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Nonlinear Science (AREA)
  • Laminated Bodies (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Position Input By Displaying (AREA)
CN201280021740.2A 2011-12-19 2012-12-11 具有纳米图案的透明衬底及其制造方法 Expired - Fee Related CN103503114B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2011-0137217 2011-12-19
KR1020110137217A KR101856231B1 (ko) 2011-12-19 2011-12-19 나노패턴을 구비한 투명기판 및 그 제조방법
PCT/KR2012/010739 WO2013094918A1 (en) 2011-12-19 2012-12-11 Transparent substrate having nano pattern and method of manufacturing the same

Publications (2)

Publication Number Publication Date
CN103503114A CN103503114A (zh) 2014-01-08
CN103503114B true CN103503114B (zh) 2017-05-03

Family

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Family Applications (1)

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CN201280021740.2A Expired - Fee Related CN103503114B (zh) 2011-12-19 2012-12-11 具有纳米图案的透明衬底及其制造方法

Country Status (7)

Country Link
US (2) US9536819B2 (enExample)
EP (1) EP2795666B1 (enExample)
JP (1) JP6257522B2 (enExample)
KR (1) KR101856231B1 (enExample)
CN (1) CN103503114B (enExample)
TW (1) TW201340172A (enExample)
WO (1) WO2013094918A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101856231B1 (ko) * 2011-12-19 2018-05-10 엘지이노텍 주식회사 나노패턴을 구비한 투명기판 및 그 제조방법
WO2017126673A1 (ja) * 2016-01-22 2017-07-27 Ｓｃｉｖａｘ株式会社 機能構造体
JP6958237B2 (ja) * 2017-10-30 2021-11-02 セイコーエプソン株式会社 エンコーダースケール、エンコーダースケールの製造方法、エンコーダー、ロボット、電子部品搬送装置、プリンターおよびプロジェクター

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101159181A (zh) * 2006-10-03 2008-04-09 精工爱普生株式会社 镀覆基板及其制造方法
JP2008181113A (ja) * 2006-12-27 2008-08-07 Toray Ind Inc 反射型偏光板及びそれを用いた液晶表示装置
US20080187719A1 (en) * 2006-11-17 2008-08-07 Fuji Electric Device Technology Co., Ltd. Nano-imprinting mold, method of manufacture of nano-imprinting mold, and recording medium manufactured with nano-imprinting mold
CN101276079A (zh) * 2007-03-28 2008-10-01 C.R.F.阿西安尼顾问公司 获得透明导电薄膜的方法
CN101809046A (zh) * 2007-09-28 2010-08-18 旭硝子株式会社 光固化性组合物、精细图案形成体的制造方法和光学元件
CN102046357A (zh) * 2008-06-05 2011-05-04 旭硝子株式会社 纳米压印用模具、其制造方法及表面具有微细凹凸结构的树脂成形体以及线栅型偏振器的制造方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001075074A (ja) 1999-08-18 2001-03-23 Internatl Business Mach Corp <Ibm> タッチセンサ一体型液晶表示素子
WO2002093534A1 (fr) 2001-05-16 2002-11-21 Bridgestone Corporation Fenetre assurant la transmission de la lumiere et une protection contre les ondes electromagnetiques
JP2002341781A (ja) * 2001-05-16 2002-11-29 Bridgestone Corp 表示パネル
JP2003198186A (ja) * 2001-12-25 2003-07-11 Dainippon Printing Co Ltd 電磁波遮蔽シートの製造方法および電磁波遮蔽シート
JP4323219B2 (ja) 2002-05-31 2009-09-02 三星モバイルディスプレイ株式會社 面光源装置とこれを利用した液晶表示素子組立体
JP4262944B2 (ja) 2002-08-08 2009-05-13 アルプス電気株式会社 照明装置および液晶表示装置
US7113249B2 (en) 2003-01-06 2006-09-26 Dai Nippon Printing Co., Ltd. Monochrome liquid crystal display having higher spaces in pixel area than in peripheral area and production method therefor
US20080117509A1 (en) 2004-06-30 2008-05-22 Zeon Corporation Electromagnetic Wave Shielding Grid Polarizer and Its Manufacturing Method and Grid Polarizer Manufacturing Method
JP4396459B2 (ja) * 2004-09-08 2010-01-13 日本ゼオン株式会社 電磁波遮蔽性グリッド偏光子及びその製造方法
JP2007128091A (ja) * 2005-11-03 2007-05-24 Samsung Electronics Co Ltd 表示基板及びその製造方法並びにそれを具備した表示パネル
KR101297234B1 (ko) 2006-09-26 2013-08-16 재단법인서울대학교산학협력재단 표시 기판 및 이의 제조 방법
JP4520445B2 (ja) 2006-10-11 2010-08-04 旭化成イーマテリアルズ株式会社 ワイヤグリッド偏光板
US7737392B2 (en) * 2006-11-09 2010-06-15 The Board Of Trustees Of The University Of Illinois Photonic crystal sensors with integrated fluid containment structure, sample handling devices incorporating same, and uses thereof for biomolecular interaction analysis
JP2008294372A (ja) * 2007-05-28 2008-12-04 Panasonic Corp 電磁波シールドフィルム
JP2009031392A (ja) 2007-07-25 2009-02-12 Seiko Epson Corp ワイヤーグリッド型偏光素子、その製造方法、液晶装置および投射型表示装置
JP4766094B2 (ja) 2008-10-01 2011-09-07 ソニー株式会社 表示パネル、表示装置
US20110187669A1 (en) * 2008-11-12 2011-08-04 Sharp Kabushiki Kaisha Liquid crystal display device and manufacting method thereof
JP2010205611A (ja) 2009-03-04 2010-09-16 Casio Computer Co Ltd タッチパネル
KR101191981B1 (ko) 2009-09-03 2012-10-17 한국표준과학연구원 반도체 나노선 어레이 및 그 제조방법
WO2011065032A1 (ja) 2009-11-27 2011-06-03 凸版印刷株式会社 透明導電性積層体およびその製造方法ならびに静電容量式タッチパネル
US8493349B2 (en) 2009-12-10 2013-07-23 Lg Display Co., Ltd. Touch screen panel
WO2011071096A1 (ja) * 2009-12-11 2011-06-16 日本写真印刷株式会社 薄型ディスプレイと抵抗膜式タッチパネルの実装構造、表面突起付き抵抗膜式タッチパネルユニット、及び、裏面突起付き薄型ディスプレイユニット
JP5769734B2 (ja) 2010-02-05 2015-08-26 モレキュラー・インプリンツ・インコーポレーテッド 高コントラスト位置合わせマークを有するテンプレート
US8611077B2 (en) 2010-08-27 2013-12-17 Apple Inc. Electronic devices with component mounting structures
KR20100129255A (ko) 2010-11-09 2010-12-08 최은석 전기매트 진열대
KR101197776B1 (ko) * 2010-12-27 2012-11-06 엘지이노텍 주식회사 와이어그리드편광자의 제조방법
DK2746824T3 (en) 2011-09-15 2017-02-13 Soken Kagaku Kk Contact preventive film, touch panel and cover plate for a screen device
KR101856231B1 (ko) 2011-12-19 2018-05-10 엘지이노텍 주식회사 나노패턴을 구비한 투명기판 및 그 제조방법

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101159181A (zh) * 2006-10-03 2008-04-09 精工爱普生株式会社 镀覆基板及其制造方法
US20080187719A1 (en) * 2006-11-17 2008-08-07 Fuji Electric Device Technology Co., Ltd. Nano-imprinting mold, method of manufacture of nano-imprinting mold, and recording medium manufactured with nano-imprinting mold
JP2008181113A (ja) * 2006-12-27 2008-08-07 Toray Ind Inc 反射型偏光板及びそれを用いた液晶表示装置
CN101276079A (zh) * 2007-03-28 2008-10-01 C.R.F.阿西安尼顾问公司 获得透明导电薄膜的方法
CN101809046A (zh) * 2007-09-28 2010-08-18 旭硝子株式会社 光固化性组合物、精细图案形成体的制造方法和光学元件
CN102046357A (zh) * 2008-06-05 2011-05-04 旭硝子株式会社 纳米压印用模具、其制造方法及表面具有微细凹凸结构的树脂成形体以及线栅型偏振器的制造方法

Also Published As

Publication number Publication date
JP6257522B2 (ja) 2018-01-10
KR101856231B1 (ko) 2018-05-10
US9536819B2 (en) 2017-01-03
CN103503114A (zh) 2014-01-08
EP2795666A4 (en) 2015-07-29
WO2013094918A1 (en) 2013-06-27
TW201340172A (zh) 2013-10-01
EP2795666A1 (en) 2014-10-29
US20150022742A1 (en) 2015-01-22
EP2795666B1 (en) 2019-06-12
US20140272316A1 (en) 2014-09-18
JP2015503244A (ja) 2015-01-29
KR20130070076A (ko) 2013-06-27

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Termination date: 20181211