CN103460373A - 半导体存储器件 - Google Patents

半导体存储器件 Download PDF

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Publication number
CN103460373A
CN103460373A CN2012800091090A CN201280009109A CN103460373A CN 103460373 A CN103460373 A CN 103460373A CN 2012800091090 A CN2012800091090 A CN 2012800091090A CN 201280009109 A CN201280009109 A CN 201280009109A CN 103460373 A CN103460373 A CN 103460373A
Authority
CN
China
Prior art keywords
aforementioned
diffusion layer
type
transistor
access transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2012800091090A
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English (en)
Chinese (zh)
Inventor
舛冈富士雄
新井绅太郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Unisantis Electronics Singapore Pte Ltd
Original Assignee
Unisantis Electronics Singapore Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unisantis Electronics Singapore Pte Ltd filed Critical Unisantis Electronics Singapore Pte Ltd
Publication of CN103460373A publication Critical patent/CN103460373A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66666—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
CN2012800091090A 2012-02-15 2012-02-15 半导体存储器件 Pending CN103460373A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2012/053533 WO2013121537A1 (fr) 2012-02-15 2012-02-15 Dispositif semiconducteur de stockage

Publications (1)

Publication Number Publication Date
CN103460373A true CN103460373A (zh) 2013-12-18

Family

ID=48983698

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2012800091090A Pending CN103460373A (zh) 2012-02-15 2012-02-15 半导体存储器件

Country Status (4)

Country Link
KR (1) KR20130118949A (fr)
CN (1) CN103460373A (fr)
TW (1) TW201334161A (fr)
WO (1) WO2013121537A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111899775A (zh) * 2020-07-24 2020-11-06 安徽大学 一种可实现多种逻辑功能和bcam运算的sram存储单元电路

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07201184A (ja) * 1993-12-28 1995-08-04 Hitachi Ltd 半導体記憶装置
US6111799A (en) * 1998-10-29 2000-08-29 Nec Corporation Semiconductor memory in which access to broken word line is inhibited
CN102024815A (zh) * 2009-09-14 2011-04-20 日本优尼山帝斯电子株式会社 半导体存储器件及其制造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07201184A (ja) * 1993-12-28 1995-08-04 Hitachi Ltd 半導体記憶装置
US6111799A (en) * 1998-10-29 2000-08-29 Nec Corporation Semiconductor memory in which access to broken word line is inhibited
CN102024815A (zh) * 2009-09-14 2011-04-20 日本优尼山帝斯电子株式会社 半导体存储器件及其制造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111899775A (zh) * 2020-07-24 2020-11-06 安徽大学 一种可实现多种逻辑功能和bcam运算的sram存储单元电路

Also Published As

Publication number Publication date
TW201334161A (zh) 2013-08-16
WO2013121537A1 (fr) 2013-08-22
KR20130118949A (ko) 2013-10-30

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Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20131218