KR20130118949A - 반도체 기억 장치 - Google Patents

반도체 기억 장치 Download PDF

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Publication number
KR20130118949A
KR20130118949A KR1020137021568A KR20137021568A KR20130118949A KR 20130118949 A KR20130118949 A KR 20130118949A KR 1020137021568 A KR1020137021568 A KR 1020137021568A KR 20137021568 A KR20137021568 A KR 20137021568A KR 20130118949 A KR20130118949 A KR 20130118949A
Authority
KR
South Korea
Prior art keywords
diffusion layer
type
layer
pmos
transistor
Prior art date
Application number
KR1020137021568A
Other languages
English (en)
Korean (ko)
Inventor
후지오 마스오카
신타로 아라이
Original Assignee
유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 filed Critical 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드
Publication of KR20130118949A publication Critical patent/KR20130118949A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66666—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
KR1020137021568A 2012-02-15 2012-02-15 반도체 기억 장치 KR20130118949A (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2012/053533 WO2013121537A1 (fr) 2012-02-15 2012-02-15 Dispositif semiconducteur de stockage

Publications (1)

Publication Number Publication Date
KR20130118949A true KR20130118949A (ko) 2013-10-30

Family

ID=48983698

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137021568A KR20130118949A (ko) 2012-02-15 2012-02-15 반도체 기억 장치

Country Status (4)

Country Link
KR (1) KR20130118949A (fr)
CN (1) CN103460373A (fr)
TW (1) TW201334161A (fr)
WO (1) WO2013121537A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111899775A (zh) * 2020-07-24 2020-11-06 安徽大学 一种可实现多种逻辑功能和bcam运算的sram存储单元电路

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07201184A (ja) * 1993-12-28 1995-08-04 Hitachi Ltd 半導体記憶装置
JP3248497B2 (ja) * 1998-10-29 2002-01-21 日本電気株式会社 半導体記憶装置
JP5524547B2 (ja) * 2009-09-14 2014-06-18 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体記憶装置

Also Published As

Publication number Publication date
TW201334161A (zh) 2013-08-16
WO2013121537A1 (fr) 2013-08-22
CN103460373A (zh) 2013-12-18

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Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application