CN103442840B - 导电晶种层的激光移除 - Google Patents

导电晶种层的激光移除 Download PDF

Info

Publication number
CN103442840B
CN103442840B CN201280012947.3A CN201280012947A CN103442840B CN 103442840 B CN103442840 B CN 103442840B CN 201280012947 A CN201280012947 A CN 201280012947A CN 103442840 B CN103442840 B CN 103442840B
Authority
CN
China
Prior art keywords
substrate
seed layer
crystal seed
laser
operate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201280012947.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN103442840A (zh
Inventor
马修·E·苏特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tamarack Scientific Co Inc
Original Assignee
Tamarack Scientific Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tamarack Scientific Co Inc filed Critical Tamarack Scientific Co Inc
Publication of CN103442840A publication Critical patent/CN103442840A/zh
Application granted granted Critical
Publication of CN103442840B publication Critical patent/CN103442840B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0626—Energy control of the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least two axial directions, e.g. in a plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special environment or atmosphere, e.g. in an enclosure
    • B23K26/127—Working by laser beam, e.g. welding, cutting or boring in a special environment or atmosphere, e.g. in an enclosure in an enclosure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/142—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor for the removal of by-products
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/1462—Nozzles; Features related to nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/054—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by selectively removing parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
CN201280012947.3A 2011-01-13 2012-01-11 导电晶种层的激光移除 Active CN103442840B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161432539P 2011-01-13 2011-01-13
US61/432,539 2011-01-13
PCT/US2012/020983 WO2012097092A2 (en) 2011-01-13 2012-01-11 Laser removal of conductive seed layers
US13/348,063 US8778799B2 (en) 2011-01-13 2012-01-11 Laser removal of conductive seed layers
US13/348,063 2012-01-11

Publications (2)

Publication Number Publication Date
CN103442840A CN103442840A (zh) 2013-12-11
CN103442840B true CN103442840B (zh) 2015-07-01

Family

ID=46491096

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280012947.3A Active CN103442840B (zh) 2011-01-13 2012-01-11 导电晶种层的激光移除

Country Status (7)

Country Link
US (2) US8778799B2 (https=)
EP (1) EP2663419A2 (https=)
JP (1) JP5898699B2 (https=)
KR (2) KR101706517B1 (https=)
CN (1) CN103442840B (https=)
TW (1) TWI502683B (https=)
WO (1) WO2012097092A2 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI504322B (zh) * 2012-03-29 2015-10-11 Taiwan Green Point Entpr Co 雙面電路板及其製備方法
US8741691B2 (en) * 2012-04-20 2014-06-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating three dimensional integrated circuit
US8975177B2 (en) * 2013-03-14 2015-03-10 Intel Corporation Laser resist removal for integrated circuit (IC) packaging
US9412702B2 (en) 2013-03-14 2016-08-09 Intel Corporation Laser die backside film removal for integrated circuit (IC) packaging
US9908201B2 (en) * 2014-04-22 2018-03-06 Taiwan Semiconductor Manufacturing Company Limited Systems and methods for edge bead removal
US9754823B2 (en) 2014-05-28 2017-09-05 International Business Machines Corporation Substrate including selectively formed barrier layer
CN107850554B (zh) * 2015-08-26 2021-09-07 伊雷克托科学工业股份有限公司 相对于气流的镭射扫描定序及方向
WO2017052633A1 (en) * 2015-09-25 2017-03-30 Vivek Raghunathan Thin electronic package elements using laser spallation
EP3624571A1 (en) * 2018-09-14 2020-03-18 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO A process for the manufacturing of printed conductive tracks on an object and 3d printed electronics
DE102019112030B4 (de) * 2019-05-08 2023-11-02 LSR Engineering & Consulting Limited Verfahren zum Strukturieren eines Substrats
TWI825194B (zh) * 2019-10-14 2023-12-11 雷立光國際股份有限公司 乾式晶圓回收設備
CN114513900A (zh) * 2022-03-25 2022-05-17 深圳市大族数控科技股份有限公司 加工设备
CN114885525B (zh) * 2022-03-25 2025-08-15 深圳市大族数控科技股份有限公司 线路板制作方法及线路板
CN114554704A (zh) * 2022-03-25 2022-05-27 深圳市大族数控科技股份有限公司 线路板的制作方法
US12288763B2 (en) * 2022-03-31 2025-04-29 Texas Instruments Incorporated Flip chip package assembly having post connects with solder-based joints

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5221426A (en) * 1991-11-29 1993-06-22 Motorola Inc. Laser etch-back process for forming a metal feature on a non-metal substrate
US6165892A (en) * 1998-07-31 2000-12-26 Kulicke & Soffa Holdings, Inc. Method of planarizing thin film layers deposited over a common circuit base
US20050020087A1 (en) * 2003-04-24 2005-01-27 Hermann Wagner Method and apparatus for removing an edge region of a layer applied to a substrate and for coating a substrate and a substrate
US20070032095A1 (en) * 2005-08-08 2007-02-08 Applied Materials, Inc. Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
CN101437644A (zh) * 2006-02-23 2009-05-20 皮科德昂有限公司 涂覆方法
WO2010123976A1 (en) * 2009-04-21 2010-10-28 Tetrasun, Inc. Method for forming structures in a solar cell

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62104692A (ja) * 1985-11-01 1987-05-15 Fuji Electric Corp Res & Dev Ltd レ−ザ加工装置
JPH1099978A (ja) * 1996-09-27 1998-04-21 Hitachi Ltd レーザー加工装置
JPH1128900A (ja) * 1997-05-12 1999-02-02 Sumitomo Heavy Ind Ltd レーザ光を用いた塗装除去方法及びレーザ処理装置
JPH11106911A (ja) 1997-10-08 1999-04-20 Canon Inc 薄膜形成装置及びそれを用いた化合物薄膜の形成法
US6262579B1 (en) * 1998-11-13 2001-07-17 Kulicke & Soffa Holdings, Inc. Method and structure for detecting open vias in high density interconnect substrates
JP2000225487A (ja) * 1999-02-08 2000-08-15 Nippon Steel Corp レーザ切断用ノズル及びレーザ切断装置
US7379483B2 (en) * 2003-03-18 2008-05-27 Loma Linda University Medical Center Method and apparatus for material processing
JP4479556B2 (ja) * 2005-03-25 2010-06-09 ソニー株式会社 レーザエッチング装置
JP4947973B2 (ja) * 2005-06-02 2012-06-06 ソニー株式会社 レーザ加工装置とその加工方法及びデブリ回収機構とその回収方法
JP2007021528A (ja) 2005-07-15 2007-02-01 Matsushita Electric Ind Co Ltd レーザ加工装置およびその調整方法
JP4993886B2 (ja) * 2005-09-07 2012-08-08 株式会社ディスコ レーザー加工装置
US7528069B2 (en) * 2005-11-07 2009-05-05 Freescale Semiconductor, Inc. Fine pitch interconnect and method of making
WO2007058605A1 (en) 2005-11-18 2007-05-24 Replisaurus Technologies Ab Master electrode and method of forming it
FI124239B (fi) 2006-02-23 2014-05-15 Picodeon Ltd Oy Elementti, jossa on sähköä johtava kalvomainen rakenne lämmittävän ja/tai jäähdyttävän vaikutuksen synnyttämiseksi sähkövirran avulla
JP2009006350A (ja) * 2007-06-27 2009-01-15 Sony Corp レーザ加工装置とその加工方法、デブリ回収機構とその回収方法、並びに表示パネルの製造方法
KR101000466B1 (ko) * 2008-04-02 2010-12-14 에이피시스템 주식회사 레이저 가공장치 및 가공방법
US7994045B1 (en) 2009-09-08 2011-08-09 Amkor Technology, Inc. Bumped chip package fabrication method and structure
EP2638510B1 (en) * 2010-11-08 2019-05-22 Smartrac Investment B.V. A method for producing an rfid transponder

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5221426A (en) * 1991-11-29 1993-06-22 Motorola Inc. Laser etch-back process for forming a metal feature on a non-metal substrate
US6165892A (en) * 1998-07-31 2000-12-26 Kulicke & Soffa Holdings, Inc. Method of planarizing thin film layers deposited over a common circuit base
US20050020087A1 (en) * 2003-04-24 2005-01-27 Hermann Wagner Method and apparatus for removing an edge region of a layer applied to a substrate and for coating a substrate and a substrate
US20070032095A1 (en) * 2005-08-08 2007-02-08 Applied Materials, Inc. Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
CN101437644A (zh) * 2006-02-23 2009-05-20 皮科德昂有限公司 涂覆方法
WO2010123976A1 (en) * 2009-04-21 2010-10-28 Tetrasun, Inc. Method for forming structures in a solar cell

Also Published As

Publication number Publication date
JP2014504804A (ja) 2014-02-24
US9132511B2 (en) 2015-09-15
WO2012097092A3 (en) 2013-01-24
TW201238002A (en) 2012-09-16
KR101706517B1 (ko) 2017-02-13
US20120184099A1 (en) 2012-07-19
KR20160012250A (ko) 2016-02-02
KR20140037044A (ko) 2014-03-26
EP2663419A2 (en) 2013-11-20
WO2012097092A2 (en) 2012-07-19
TWI502683B (zh) 2015-10-01
US20150014287A1 (en) 2015-01-15
JP5898699B2 (ja) 2016-04-06
US8778799B2 (en) 2014-07-15
HK1191608A1 (en) 2014-08-01
CN103442840A (zh) 2013-12-11

Similar Documents

Publication Publication Date Title
CN103442840B (zh) 导电晶种层的激光移除
US6822191B2 (en) Method for producing a trench structure in a polymer substrate
KR20150070028A (ko) 인쇄 회로 트레이스 수리
JP6197418B2 (ja) 積層配線の形成方法、積層配線、及び電子素子
JPH08116158A (ja) プリント回路板及びその製造方法
JP2014504804A5 (https=)
US20080289651A1 (en) Method and apparatus for wafer edge cleaning
JP2006513862A (ja) レーザを用いて電気的な回路基板を加工するための装置および方法
KR20210152478A (ko) 오염 트랩
JPS58132952A (ja) パタ−ン形成方法
EP1183739A1 (de) Verfahren sowie eine vorrichtung zur elektrischen kontaktierung einer mit wenigstens einer dielektrischen schicht überzogenen materialoberfläche
Rumsby et al. Excimer laser patterning of thick and thin films for high-density packaging
JP2004527923A (ja) 導体路基板の構造化方法および構造化装置
JPH0688149B2 (ja) 光加工方法
HK1191608B (en) Laser removal of conductive seed layers
CN112305869B (zh) 光刻系统及其清洁方法
JP2003133283A (ja) 回路基板のパターニング方法
Tewolde et al. Laser processing of multilayered thermal spray coatings: optimal processing parameters
WO2003038895A1 (en) Wafer scribing method and wafer scribing device
CN107168017B (zh) 利用低温制程的原位euv收集器清洗的方法及装置
JP2808220B2 (ja) 光照射装置
US6057173A (en) Ablative bond pad formation
JP6086781B2 (ja) 有機半導体素子の製造方法
Ko et al. Fabrication of inkjet printed flexible electronics by low temperature subtractive laser processing
US10074608B2 (en) Method for manufacturing a contact bump by thermal expansion of a patterned sacrificial layer underneath a galvanic layer

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
REG Reference to a national code

Ref country code: HK

Ref legal event code: DE

Ref document number: 1191608

Country of ref document: HK

C14 Grant of patent or utility model
GR01 Patent grant
REG Reference to a national code

Ref country code: HK

Ref legal event code: GR

Ref document number: 1191608

Country of ref document: HK