JP2014504804A5 - - Google Patents

Download PDF

Info

Publication number
JP2014504804A5
JP2014504804A5 JP2013549523A JP2013549523A JP2014504804A5 JP 2014504804 A5 JP2014504804 A5 JP 2014504804A5 JP 2013549523 A JP2013549523 A JP 2013549523A JP 2013549523 A JP2013549523 A JP 2013549523A JP 2014504804 A5 JP2014504804 A5 JP 2014504804A5
Authority
JP
Japan
Prior art keywords
substrate
laser beam
irradiating
laser
irradiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2013549523A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014504804A (ja
JP5898699B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2012/020983 external-priority patent/WO2012097092A2/en
Publication of JP2014504804A publication Critical patent/JP2014504804A/ja
Publication of JP2014504804A5 publication Critical patent/JP2014504804A5/ja
Application granted granted Critical
Publication of JP5898699B2 publication Critical patent/JP5898699B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2013549523A 2011-01-13 2012-01-11 導電性シード層のレーザ除去 Active JP5898699B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161432539P 2011-01-13 2011-01-13
US61/432,539 2011-01-13
PCT/US2012/020983 WO2012097092A2 (en) 2011-01-13 2012-01-11 Laser removal of conductive seed layers
US13/348,063 US8778799B2 (en) 2011-01-13 2012-01-11 Laser removal of conductive seed layers
US13/348,063 2012-01-11

Publications (3)

Publication Number Publication Date
JP2014504804A JP2014504804A (ja) 2014-02-24
JP2014504804A5 true JP2014504804A5 (https=) 2015-03-05
JP5898699B2 JP5898699B2 (ja) 2016-04-06

Family

ID=46491096

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013549523A Active JP5898699B2 (ja) 2011-01-13 2012-01-11 導電性シード層のレーザ除去

Country Status (7)

Country Link
US (2) US8778799B2 (https=)
EP (1) EP2663419A2 (https=)
JP (1) JP5898699B2 (https=)
KR (2) KR101706517B1 (https=)
CN (1) CN103442840B (https=)
TW (1) TWI502683B (https=)
WO (1) WO2012097092A2 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI504322B (zh) * 2012-03-29 2015-10-11 Taiwan Green Point Entpr Co 雙面電路板及其製備方法
US8741691B2 (en) * 2012-04-20 2014-06-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating three dimensional integrated circuit
US8975177B2 (en) * 2013-03-14 2015-03-10 Intel Corporation Laser resist removal for integrated circuit (IC) packaging
US9412702B2 (en) 2013-03-14 2016-08-09 Intel Corporation Laser die backside film removal for integrated circuit (IC) packaging
US9908201B2 (en) * 2014-04-22 2018-03-06 Taiwan Semiconductor Manufacturing Company Limited Systems and methods for edge bead removal
US9754823B2 (en) 2014-05-28 2017-09-05 International Business Machines Corporation Substrate including selectively formed barrier layer
CN107850554B (zh) * 2015-08-26 2021-09-07 伊雷克托科学工业股份有限公司 相对于气流的镭射扫描定序及方向
WO2017052633A1 (en) * 2015-09-25 2017-03-30 Vivek Raghunathan Thin electronic package elements using laser spallation
EP3624571A1 (en) * 2018-09-14 2020-03-18 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO A process for the manufacturing of printed conductive tracks on an object and 3d printed electronics
DE102019112030B4 (de) * 2019-05-08 2023-11-02 LSR Engineering & Consulting Limited Verfahren zum Strukturieren eines Substrats
TWI825194B (zh) * 2019-10-14 2023-12-11 雷立光國際股份有限公司 乾式晶圓回收設備
CN114513900A (zh) * 2022-03-25 2022-05-17 深圳市大族数控科技股份有限公司 加工设备
CN114885525B (zh) * 2022-03-25 2025-08-15 深圳市大族数控科技股份有限公司 线路板制作方法及线路板
CN114554704A (zh) * 2022-03-25 2022-05-27 深圳市大族数控科技股份有限公司 线路板的制作方法
US12288763B2 (en) * 2022-03-31 2025-04-29 Texas Instruments Incorporated Flip chip package assembly having post connects with solder-based joints

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62104692A (ja) * 1985-11-01 1987-05-15 Fuji Electric Corp Res & Dev Ltd レ−ザ加工装置
US5221426A (en) * 1991-11-29 1993-06-22 Motorola Inc. Laser etch-back process for forming a metal feature on a non-metal substrate
JPH1099978A (ja) * 1996-09-27 1998-04-21 Hitachi Ltd レーザー加工装置
JPH1128900A (ja) * 1997-05-12 1999-02-02 Sumitomo Heavy Ind Ltd レーザ光を用いた塗装除去方法及びレーザ処理装置
JPH11106911A (ja) 1997-10-08 1999-04-20 Canon Inc 薄膜形成装置及びそれを用いた化合物薄膜の形成法
US6262579B1 (en) * 1998-11-13 2001-07-17 Kulicke & Soffa Holdings, Inc. Method and structure for detecting open vias in high density interconnect substrates
US6165892A (en) * 1998-07-31 2000-12-26 Kulicke & Soffa Holdings, Inc. Method of planarizing thin film layers deposited over a common circuit base
JP2000225487A (ja) * 1999-02-08 2000-08-15 Nippon Steel Corp レーザ切断用ノズル及びレーザ切断装置
US7379483B2 (en) * 2003-03-18 2008-05-27 Loma Linda University Medical Center Method and apparatus for material processing
DE10318681B4 (de) * 2003-04-24 2006-07-06 Schott Ag Verfahren und Vorrichtung zum Entfernen eines Randbereichs einer Substratschicht und zur Substratbeschichtung sowie Substrat
JP4479556B2 (ja) * 2005-03-25 2010-06-09 ソニー株式会社 レーザエッチング装置
JP4947973B2 (ja) * 2005-06-02 2012-06-06 ソニー株式会社 レーザ加工装置とその加工方法及びデブリ回収機構とその回収方法
JP2007021528A (ja) 2005-07-15 2007-02-01 Matsushita Electric Ind Co Ltd レーザ加工装置およびその調整方法
US7335611B2 (en) * 2005-08-08 2008-02-26 Applied Materials, Inc. Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
JP4993886B2 (ja) * 2005-09-07 2012-08-08 株式会社ディスコ レーザー加工装置
US7528069B2 (en) * 2005-11-07 2009-05-05 Freescale Semiconductor, Inc. Fine pitch interconnect and method of making
WO2007058605A1 (en) 2005-11-18 2007-05-24 Replisaurus Technologies Ab Master electrode and method of forming it
FI124239B (fi) 2006-02-23 2014-05-15 Picodeon Ltd Oy Elementti, jossa on sähköä johtava kalvomainen rakenne lämmittävän ja/tai jäähdyttävän vaikutuksen synnyttämiseksi sähkövirran avulla
FI20060178A7 (fi) * 2006-02-23 2007-08-24 Picodeon Ltd Oy Pinnoitusmenetelmä
JP2009006350A (ja) * 2007-06-27 2009-01-15 Sony Corp レーザ加工装置とその加工方法、デブリ回収機構とその回収方法、並びに表示パネルの製造方法
KR101000466B1 (ko) * 2008-04-02 2010-12-14 에이피시스템 주식회사 레이저 가공장치 및 가공방법
CN105023973A (zh) 2009-04-21 2015-11-04 泰特拉桑有限公司 形成太阳能电池中的结构的方法
US7994045B1 (en) 2009-09-08 2011-08-09 Amkor Technology, Inc. Bumped chip package fabrication method and structure
EP2638510B1 (en) * 2010-11-08 2019-05-22 Smartrac Investment B.V. A method for producing an rfid transponder

Similar Documents

Publication Publication Date Title
JP2014504804A5 (https=)
TWI502683B (zh) 導電晶種層之雷射移除
JP6162827B2 (ja) 基板を分離する方法及び装置
US11820119B2 (en) Laser lift off systems and methods that overlap irradiation zones to provide multiple pulses of laser irradiation per location at an interface between layers to be separated
JP5816409B2 (ja) レーザビア穴あけのためのスループットを高める方法
JP4465429B2 (ja) レーザ加工方法
KR101039549B1 (ko) 레이저 직접 박막 패터닝 방법
JP2013521131A (ja) レーザ加工の方法および装置
KR20160008485A (ko) 얇은 반도체 기판들을 다이싱하는 방법
JP3982136B2 (ja) レーザ加工方法及びその装置
JP2015018980A (ja) レーザ処理装置、およびレーザ処理方法
JP5680867B2 (ja) 基板切断装置及びこれを用いた基板切断方法
TWI384551B (zh) 圖案化多晶氧化銦錫之方法
KR20210152478A (ko) 오염 트랩
JP2009520376A5 (https=)
CN106868471A (zh) 一种双光束快速制备石墨烯图形的方法及装置
US9377681B2 (en) Mask manufacturing apparatus and method of manufacturing mask using laser beam
KR101450767B1 (ko) 선택적 펄스 폭 가변형 레이저를 이용한 능동형 유기 자체 발광 소자의 비열 리페어 방법 및 장치
JP2008192613A5 (https=)
RU2613054C1 (ru) Способ формирования тонкоплёночного рисунка на подложке
JP2008193035A (ja) 微細形状転写方法および微細形状転写装置
JP2014065044A (ja) 異物除去装置、異物除去方法
JP2014064965A (ja) 異物除去装置、異物除去方法
JP4322045B2 (ja) 微小バンプ作製方法
JP2005209817A (ja) 金属配線形成方法および金属配線形成装置