TWI502683B - 導電晶種層之雷射移除 - Google Patents

導電晶種層之雷射移除 Download PDF

Info

Publication number
TWI502683B
TWI502683B TW101101498A TW101101498A TWI502683B TW I502683 B TWI502683 B TW I502683B TW 101101498 A TW101101498 A TW 101101498A TW 101101498 A TW101101498 A TW 101101498A TW I502683 B TWI502683 B TW I502683B
Authority
TW
Taiwan
Prior art keywords
substrate
seed layer
laser
laser light
operable
Prior art date
Application number
TW101101498A
Other languages
English (en)
Chinese (zh)
Other versions
TW201238002A (en
Inventor
馬修E 索特爾
Original Assignee
落葉松科學有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 落葉松科學有限公司 filed Critical 落葉松科學有限公司
Publication of TW201238002A publication Critical patent/TW201238002A/zh
Application granted granted Critical
Publication of TWI502683B publication Critical patent/TWI502683B/zh

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/40Removing material taking account of the properties of the material involved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0626Energy control of the laser beam
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08Devices involving relative movement between laser beam and workpiece
    • B23K26/083Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853Devices involving movement of the workpiece in at least two axial directions, e.g. in a plane
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12Working by laser beam, e.g. welding, cutting or boring in a special environment or atmosphere, e.g. in an enclosure
    • B23K26/127Working by laser beam, e.g. welding, cutting or boring in a special environment or atmosphere, e.g. in an enclosure in an enclosure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/142Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor for the removal of by-products
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/1462Nozzles; Features related to nozzles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/362Laser etching
    • B23K26/364Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/031Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/031Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/054Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by selectively removing parts thereof
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/16Composite materials
    • B23K2103/166Multilayered materials
    • B23K2103/172Multilayered materials wherein at least one of the layers is non-metallic

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
TW101101498A 2011-01-13 2012-01-13 導電晶種層之雷射移除 TWI502683B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161432539P 2011-01-13 2011-01-13
US13/348,063 US8778799B2 (en) 2011-01-13 2012-01-11 Laser removal of conductive seed layers

Publications (2)

Publication Number Publication Date
TW201238002A TW201238002A (en) 2012-09-16
TWI502683B true TWI502683B (zh) 2015-10-01

Family

ID=46491096

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101101498A TWI502683B (zh) 2011-01-13 2012-01-13 導電晶種層之雷射移除

Country Status (7)

Country Link
US (2) US8778799B2 (https=)
EP (1) EP2663419A2 (https=)
JP (1) JP5898699B2 (https=)
KR (2) KR101706517B1 (https=)
CN (1) CN103442840B (https=)
TW (1) TWI502683B (https=)
WO (1) WO2012097092A2 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI504322B (zh) * 2012-03-29 2015-10-11 Taiwan Green Point Entpr Co 雙面電路板及其製備方法
US8741691B2 (en) * 2012-04-20 2014-06-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating three dimensional integrated circuit
US8975177B2 (en) * 2013-03-14 2015-03-10 Intel Corporation Laser resist removal for integrated circuit (IC) packaging
US9412702B2 (en) 2013-03-14 2016-08-09 Intel Corporation Laser die backside film removal for integrated circuit (IC) packaging
US9908201B2 (en) * 2014-04-22 2018-03-06 Taiwan Semiconductor Manufacturing Company Limited Systems and methods for edge bead removal
US9754823B2 (en) 2014-05-28 2017-09-05 International Business Machines Corporation Substrate including selectively formed barrier layer
CN107850554B (zh) * 2015-08-26 2021-09-07 伊雷克托科学工业股份有限公司 相对于气流的镭射扫描定序及方向
WO2017052633A1 (en) * 2015-09-25 2017-03-30 Vivek Raghunathan Thin electronic package elements using laser spallation
EP3624571A1 (en) * 2018-09-14 2020-03-18 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO A process for the manufacturing of printed conductive tracks on an object and 3d printed electronics
DE102019112030B4 (de) * 2019-05-08 2023-11-02 LSR Engineering & Consulting Limited Verfahren zum Strukturieren eines Substrats
TWI825194B (zh) * 2019-10-14 2023-12-11 雷立光國際股份有限公司 乾式晶圓回收設備
CN114513900A (zh) * 2022-03-25 2022-05-17 深圳市大族数控科技股份有限公司 加工设备
CN114885525B (zh) * 2022-03-25 2025-08-15 深圳市大族数控科技股份有限公司 线路板制作方法及线路板
CN114554704A (zh) * 2022-03-25 2022-05-27 深圳市大族数控科技股份有限公司 线路板的制作方法
US12288763B2 (en) * 2022-03-31 2025-04-29 Texas Instruments Incorporated Flip chip package assembly having post connects with solder-based joints

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6262579B1 (en) * 1998-11-13 2001-07-17 Kulicke & Soffa Holdings, Inc. Method and structure for detecting open vias in high density interconnect substrates
US20050020087A1 (en) * 2003-04-24 2005-01-27 Hermann Wagner Method and apparatus for removing an edge region of a layer applied to a substrate and for coating a substrate and a substrate
US20070032095A1 (en) * 2005-08-08 2007-02-08 Applied Materials, Inc. Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
WO2010123976A1 (en) * 2009-04-21 2010-10-28 Tetrasun, Inc. Method for forming structures in a solar cell

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62104692A (ja) * 1985-11-01 1987-05-15 Fuji Electric Corp Res & Dev Ltd レ−ザ加工装置
US5221426A (en) * 1991-11-29 1993-06-22 Motorola Inc. Laser etch-back process for forming a metal feature on a non-metal substrate
JPH1099978A (ja) * 1996-09-27 1998-04-21 Hitachi Ltd レーザー加工装置
JPH1128900A (ja) * 1997-05-12 1999-02-02 Sumitomo Heavy Ind Ltd レーザ光を用いた塗装除去方法及びレーザ処理装置
JPH11106911A (ja) 1997-10-08 1999-04-20 Canon Inc 薄膜形成装置及びそれを用いた化合物薄膜の形成法
US6165892A (en) * 1998-07-31 2000-12-26 Kulicke & Soffa Holdings, Inc. Method of planarizing thin film layers deposited over a common circuit base
JP2000225487A (ja) * 1999-02-08 2000-08-15 Nippon Steel Corp レーザ切断用ノズル及びレーザ切断装置
US7379483B2 (en) * 2003-03-18 2008-05-27 Loma Linda University Medical Center Method and apparatus for material processing
JP4479556B2 (ja) * 2005-03-25 2010-06-09 ソニー株式会社 レーザエッチング装置
JP4947973B2 (ja) * 2005-06-02 2012-06-06 ソニー株式会社 レーザ加工装置とその加工方法及びデブリ回収機構とその回収方法
JP2007021528A (ja) 2005-07-15 2007-02-01 Matsushita Electric Ind Co Ltd レーザ加工装置およびその調整方法
JP4993886B2 (ja) * 2005-09-07 2012-08-08 株式会社ディスコ レーザー加工装置
US7528069B2 (en) * 2005-11-07 2009-05-05 Freescale Semiconductor, Inc. Fine pitch interconnect and method of making
WO2007058605A1 (en) 2005-11-18 2007-05-24 Replisaurus Technologies Ab Master electrode and method of forming it
FI124239B (fi) 2006-02-23 2014-05-15 Picodeon Ltd Oy Elementti, jossa on sähköä johtava kalvomainen rakenne lämmittävän ja/tai jäähdyttävän vaikutuksen synnyttämiseksi sähkövirran avulla
FI20060178A7 (fi) * 2006-02-23 2007-08-24 Picodeon Ltd Oy Pinnoitusmenetelmä
JP2009006350A (ja) * 2007-06-27 2009-01-15 Sony Corp レーザ加工装置とその加工方法、デブリ回収機構とその回収方法、並びに表示パネルの製造方法
KR101000466B1 (ko) * 2008-04-02 2010-12-14 에이피시스템 주식회사 레이저 가공장치 및 가공방법
US7994045B1 (en) 2009-09-08 2011-08-09 Amkor Technology, Inc. Bumped chip package fabrication method and structure
EP2638510B1 (en) * 2010-11-08 2019-05-22 Smartrac Investment B.V. A method for producing an rfid transponder

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6262579B1 (en) * 1998-11-13 2001-07-17 Kulicke & Soffa Holdings, Inc. Method and structure for detecting open vias in high density interconnect substrates
US20050020087A1 (en) * 2003-04-24 2005-01-27 Hermann Wagner Method and apparatus for removing an edge region of a layer applied to a substrate and for coating a substrate and a substrate
US20070032095A1 (en) * 2005-08-08 2007-02-08 Applied Materials, Inc. Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
WO2010123976A1 (en) * 2009-04-21 2010-10-28 Tetrasun, Inc. Method for forming structures in a solar cell

Also Published As

Publication number Publication date
JP2014504804A (ja) 2014-02-24
US9132511B2 (en) 2015-09-15
WO2012097092A3 (en) 2013-01-24
TW201238002A (en) 2012-09-16
KR101706517B1 (ko) 2017-02-13
US20120184099A1 (en) 2012-07-19
KR20160012250A (ko) 2016-02-02
KR20140037044A (ko) 2014-03-26
CN103442840B (zh) 2015-07-01
EP2663419A2 (en) 2013-11-20
WO2012097092A2 (en) 2012-07-19
US20150014287A1 (en) 2015-01-15
JP5898699B2 (ja) 2016-04-06
US8778799B2 (en) 2014-07-15
HK1191608A1 (en) 2014-08-01
CN103442840A (zh) 2013-12-11

Similar Documents

Publication Publication Date Title
TWI502683B (zh) 導電晶種層之雷射移除
JP5453386B2 (ja) 多層半導体ウエハの処理
JP6089057B2 (ja) マルチステップ・非対称形状レーザビームスクライビング
TWI508155B (zh) 使用混合式分裂射束雷射劃線製程及電漿蝕刻的晶圓切割
US6949147B2 (en) In situ module for particle removal from solid-state surfaces
JP2014504804A5 (https=)
TWI501312B (zh) 電子束誘發蝕刻含鎵層之方法
JP2009503903A (ja) モノリシックマイクロ波集積回路用ビアホールの加工形成
CN103703554A (zh) 在裁切晶粒附着膜或其它材料层之前,蚀刻激光切割半导体
US20080289651A1 (en) Method and apparatus for wafer edge cleaning
JP2006513862A (ja) レーザを用いて電気的な回路基板を加工するための装置および方法
KR102918388B1 (ko) 고급 패키징을 위한 마이크로 비아 형성 방법들
HK1191608B (en) Laser removal of conductive seed layers
JP2004527923A (ja) 導体路基板の構造化方法および構造化装置
JP7061308B2 (ja) 金属微細構造体の製造方法
US10074608B2 (en) Method for manufacturing a contact bump by thermal expansion of a patterned sacrificial layer underneath a galvanic layer
Lu et al. Laser applications in integrated circuits and photonics packaging
HK1122454A (en) Laser machining method for printed circuit board
JP2001334670A (ja) プリンタ用ノズルの製造方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees