CN103373928B - 有机发光二极管用化合物、有机发光二极管和平板显示装置 - Google Patents
有机发光二极管用化合物、有机发光二极管和平板显示装置 Download PDFInfo
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- CN103373928B CN103373928B CN201310076641.0A CN201310076641A CN103373928B CN 103373928 B CN103373928 B CN 103373928B CN 201310076641 A CN201310076641 A CN 201310076641A CN 103373928 B CN103373928 B CN 103373928B
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- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- QSQIGGCOCHABAP-UHFFFAOYSA-N hexacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC6=CC=CC=C6C=C5C=C4C=C3C=C21 QSQIGGCOCHABAP-UHFFFAOYSA-N 0.000 description 1
- GNOIPBMMFNIUFM-UHFFFAOYSA-N hexamethylphosphoric triamide Chemical compound CN(C)P(=O)(N(C)C)N(C)C GNOIPBMMFNIUFM-UHFFFAOYSA-N 0.000 description 1
- PKIFBGYEEVFWTJ-UHFFFAOYSA-N hexaphene Chemical group C1=CC=C2C=C3C4=CC5=CC6=CC=CC=C6C=C5C=C4C=CC3=CC2=C1 PKIFBGYEEVFWTJ-UHFFFAOYSA-N 0.000 description 1
- 125000003454 indenyl group Chemical group C1(C=CC2=CC=CC=C12)* 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 150000002475 indoles Chemical class 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000005956 isoquinolyl group Chemical group 0.000 description 1
- ZLVXBBHTMQJRSX-VMGNSXQWSA-N jdtic Chemical compound C1([C@]2(C)CCN(C[C@@H]2C)C[C@H](C(C)C)NC(=O)[C@@H]2NCC3=CC(O)=CC=C3C2)=CC=CC(O)=C1 ZLVXBBHTMQJRSX-VMGNSXQWSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Inorganic materials [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- UBJFKNSINUCEAL-UHFFFAOYSA-N lithium;2-methylpropane Chemical compound [Li+].C[C-](C)C UBJFKNSINUCEAL-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 125000006574 non-aromatic ring group Chemical group 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- LSQODMMMSXHVCN-UHFFFAOYSA-N ovalene Chemical compound C1=C(C2=C34)C=CC3=CC=C(C=C3C5=C6C(C=C3)=CC=C3C6=C6C(C=C3)=C3)C4=C5C6=C2C3=C1 LSQODMMMSXHVCN-UHFFFAOYSA-N 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- 125000002971 oxazolyl group Chemical group 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- GUVXZFRDPCKWEM-UHFFFAOYSA-N pentalene Chemical compound C1=CC2=CC=CC2=C1 GUVXZFRDPCKWEM-UHFFFAOYSA-N 0.000 description 1
- JQQSUOJIMKJQHS-UHFFFAOYSA-N pentaphene Chemical compound C1=CC=C2C=C3C4=CC5=CC=CC=C5C=C4C=CC3=CC2=C1 JQQSUOJIMKJQHS-UHFFFAOYSA-N 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- LPNYRYFBWFDTMA-UHFFFAOYSA-N potassium tert-butoxide Chemical compound [K+].CC(C)(C)[O-] LPNYRYFBWFDTMA-UHFFFAOYSA-N 0.000 description 1
- 125000003226 pyrazolyl group Chemical group 0.000 description 1
- 125000002098 pyridazinyl group Chemical group 0.000 description 1
- ABMYEXAYWZJVOV-UHFFFAOYSA-N pyridin-3-ylboronic acid Chemical class OB(O)C1=CC=CN=C1 ABMYEXAYWZJVOV-UHFFFAOYSA-N 0.000 description 1
- 125000005493 quinolyl group Chemical group 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- FMKFBRKHHLWKDB-UHFFFAOYSA-N rubicene Chemical compound C12=CC=CC=C2C2=CC=CC3=C2C1=C1C=CC=C2C4=CC=CC=C4C3=C21 FMKFBRKHHLWKDB-UHFFFAOYSA-N 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- GEHJYWRUCIMESM-UHFFFAOYSA-L sodium sulfite Chemical compound [Na+].[Na+].[O-]S([O-])=O GEHJYWRUCIMESM-UHFFFAOYSA-L 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 125000005017 substituted alkenyl group Chemical group 0.000 description 1
- UGNWTBMOAKPKBL-UHFFFAOYSA-N tetrachloro-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(Cl)=C(Cl)C1=O UGNWTBMOAKPKBL-UHFFFAOYSA-N 0.000 description 1
- 125000000335 thiazolyl group Chemical group 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- 125000001425 triazolyl group Chemical group 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- 125000006617 triphenylamine group Chemical class 0.000 description 1
- 125000005580 triphenylene group Chemical group 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000004078 waterproofing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
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- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C211/00—Compounds containing amino groups bound to a carbon skeleton
- C07C211/43—Compounds containing amino groups bound to a carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton
- C07C211/57—Compounds containing amino groups bound to a carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings being part of condensed ring systems of the carbon skeleton
- C07C211/61—Compounds containing amino groups bound to a carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings being part of condensed ring systems of the carbon skeleton with at least one of the condensed ring systems formed by three or more rings
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- C07C255/58—Carboxylic acid nitriles having cyano groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing cyano groups and singly-bound nitrogen atoms, not being further bound to other hetero atoms, bound to the carbon skeleton
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- C07D209/00—Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
- C07D209/56—Ring systems containing three or more rings
- C07D209/80—[b, c]- or [b, d]-condensed
- C07D209/82—Carbazoles; Hydrogenated carbazoles
- C07D209/86—Carbazoles; Hydrogenated carbazoles with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to carbon atoms of the ring system
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- C07D209/56—Ring systems containing three or more rings
- C07D209/80—[b, c]- or [b, d]-condensed
- C07D209/82—Carbazoles; Hydrogenated carbazoles
- C07D209/88—Carbazoles; Hydrogenated carbazoles with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to carbon atoms of the ring system
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- C07D—HETEROCYCLIC COMPOUNDS
- C07D213/00—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members
- C07D213/02—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members
- C07D213/04—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen or carbon atoms directly attached to the ring nitrogen atom
- C07D213/24—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen or carbon atoms directly attached to the ring nitrogen atom with substituted hydrocarbon radicals attached to ring carbon atoms
- C07D213/36—Radicals substituted by singly-bound nitrogen atoms
- C07D213/38—Radicals substituted by singly-bound nitrogen atoms having only hydrogen or hydrocarbon radicals attached to the substituent nitrogen atom
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- C07D—HETEROCYCLIC COMPOUNDS
- C07D235/00—Heterocyclic compounds containing 1,3-diazole or hydrogenated 1,3-diazole rings, condensed with other rings
- C07D235/02—Heterocyclic compounds containing 1,3-diazole or hydrogenated 1,3-diazole rings, condensed with other rings condensed with carbocyclic rings or ring systems
- C07D235/04—Benzimidazoles; Hydrogenated benzimidazoles
- C07D235/06—Benzimidazoles; Hydrogenated benzimidazoles with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached in position 2
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- C07D—HETEROCYCLIC COMPOUNDS
- C07D251/00—Heterocyclic compounds containing 1,3,5-triazine rings
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- C07D251/12—Heterocyclic compounds containing 1,3,5-triazine rings not condensed with other rings having three double bonds between ring members or between ring members and non-ring members
- C07D251/14—Heterocyclic compounds containing 1,3,5-triazine rings not condensed with other rings having three double bonds between ring members or between ring members and non-ring members with hydrogen or carbon atoms directly attached to at least one ring carbon atom
- C07D251/24—Heterocyclic compounds containing 1,3,5-triazine rings not condensed with other rings having three double bonds between ring members or between ring members and non-ring members with hydrogen or carbon atoms directly attached to at least one ring carbon atom to three ring carbon atoms
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- C07D277/62—Benzothiazoles
- C07D277/64—Benzothiazoles with only hydrocarbon or substituted hydrocarbon radicals attached in position 2
- C07D277/66—Benzothiazoles with only hydrocarbon or substituted hydrocarbon radicals attached in position 2 with aromatic rings or ring systems directly attached in position 2
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- C07D401/02—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing two hetero rings
- C07D401/04—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing two hetero rings directly linked by a ring-member-to-ring-member bond
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- C07D401/02—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing two hetero rings
- C07D401/12—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing two hetero rings linked by a chain containing hetero atoms as chain links
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- C07D401/14—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing three or more hetero rings
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- C07D403/00—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, not provided for by group C07D401/00
- C07D403/02—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, not provided for by group C07D401/00 containing two hetero rings
- C07D403/04—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, not provided for by group C07D401/00 containing two hetero rings directly linked by a ring-member-to-ring-member bond
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- C07D403/02—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, not provided for by group C07D401/00 containing two hetero rings
- C07D403/10—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, not provided for by group C07D401/00 containing two hetero rings linked by a carbon chain containing aromatic rings
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- C07D403/12—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, not provided for by group C07D401/00 containing two hetero rings linked by a chain containing hetero atoms as chain links
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- C07D471/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed system contains two hetero rings
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- C07D487/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00 in which the condensed system contains two hetero rings
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- C07D491/12—Heterocyclic compounds containing in the condensed ring system both one or more rings having oxygen atoms as the only ring hetero atoms and one or more rings having nitrogen atoms as the only ring hetero atoms, not provided for by groups C07D451/00 - C07D459/00, C07D463/00, C07D477/00 or C07D489/00 in which the condensed system contains three hetero rings
- C07D491/16—Peri-condensed systems
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Abstract
本发明公开了由以下通式1表示的化合物可用于有机发光二极管。本发明还公开了包括该化合物的有机发光二极管和包括该有机发光二极管的平板显示装置。通式1
Description
相关专利申请的交叉引用
本申请要求于2012年4月17日向韩国知识产权局递交的韩国专利申请第10-2012-0039968号的优先权和权益,其全部内容通过引用合并于此。
技术领域
本发明的一个或多个实施方式涉及用于有机发光装置的化合物,及包括所述化合物的有机发光装置。
背景技术
有机发光二极管(OLED)为自发光装置,具有例如宽视角、良好的对比度、快的响应时间、高亮度和良好的驱动电压。OLED可提供彩色的图像。
通常,OLED具有包括基板,及依次堆叠在基板上的阳极、空穴传输层(HTL)、发光层(EML)、电子传输层(ETL)和阴极的结构。在这方面,HTL、EML和ETL为由有机化合物形成的有机薄膜。
具有上述结构的OLED的工作原理如下。
当阳极和阴极之间施加电压时,由阳极注入的空穴通过HTL移动到EML,并且由阴极注入的电子通过ETL迁移到EML。空穴和电子在EML中重新结合以产生激子。当激子由激发态跃迁到基态时,便发出光。
决定OLED发光效率的最重要的因素为发光材料。荧光材料或磷光材料已被用做发光材料,但是包括这种发光材料的OLED未显示出令人满意的效率、驱动电压和寿命。
发明内容
本发明的实施方式提供了用于有机发光二极管的新化合物,所述新化合物具有良好的电学性质、良好的电荷传输能力、良好的发光性质和高的玻璃化转变温度。所述化合物能够抑制结晶化,并可被用作适用于全部颜色,例如红色、绿色、蓝色、白色等的荧光和磷光装置的电子传输材料。所述化合物还可被用作比常规主体材料具有更高发光效率和更长寿命的绿色、蓝色或白色的发光材料。所述化合物还具有合适的色坐标。
本发明的实施方式还提供了包括上述化合物并具有高效率、低电压、高亮度和长寿命的有机发光二极管。
根据本发明的一个方面,用于有机发光二极管的化合物由以下的通式1表示:
通式1
在通式1中,R1和R2各自独立地为卤素、氰基、取代或未取代的C1至C60烷基、取代或未取代的C6至C60芳基、取代或未取代的C3至C60杂芳基、或取代或未取代的C6至C60稠合多环基。
R3为氢、氘、卤素、氰基、取代或未取代的C6至C60芳基、取代或未取代的C3至C60杂芳基、或取代或未取代的C6至C60稠合多环基。
Ar1和Ar2各自独立地为取代或未取代的C6至C60芳基、取代或未取代的C3至C60杂芳基、或取代或未取代的C6至C60稠合多环基。
根据本发明的另一个方面,有机发光二极管包括第一电极、第二电极、以及所述第一电极和所述第二电极之间的有机层。所述有机层包括通式1所述的化合物。
根据本发明的又一个方面,平板显示装置包括所述有机发光二极管,并且所述有机发光二极管的第一电极电连接到薄膜晶体管的源极或漏极。
附图说明
参照以下详细说明,同时结合以下附图,本发明的上述及其它特征和优点将变得更为明显,附图中:
图1为根据本发明实施方式的有机发光二极管的结构示意图。
具体实施方式
下文将说明本发明的示例性实施方式。如文中使用,术语“和/或”包括一个或多个相关的列出的项目的任何和全部组合。例如“至少一个”的表述,当位于一系列元件时,限制整列元件,并且不限制列表的单个元件。
根据本发明的一个实施方式,化合物由以下通式1表示:
通式1
在通式1中,R1和R2各自独立地为卤素、氰基、取代或未取代的C1至C60烷基、取代或未取代的C6至C60芳基、取代或未取代的C3至C60杂芳基、或取代或未取代的C6至C60稠合多环基。
R3为氢、氘、卤素、氰基、取代或未取代的C6至C60芳基、取代或未取代的C3至C60杂芳基、或取代或未取代的C6至C60稠合多环基。
Ar1和Ar2各自独立地为取代或未取代的C6至C60芳基、取代或未取代的C3至C60杂芳基、或取代或未取代的C6至C60稠合多环基。
所述通式1的化合物具有比常规的空穴传输材料高的驱动电压和效率。因此,包括通式1的化合物的OLED呈现良好的驱动寿命和提高的功率效率。所以,可制造具有低功耗的OLED。
所述通式1的化合物具有不对称的结构,其中,中心稠合芳环中的一个胺基被取代,导致相对高的Tg和改善的空穴传输能力。
在对称的结构中,其中,所述中心稠合芳环中的两个氨基被取代,氨键的自由旋转增加。因而,与具有非对称结构的通式1的化合物相比,具有对称结构的化合物具有相对低的Tg。此外,对称结构增加了氨基的给电子性质,并且因此使分子的HOMO(最高已占分子轨道)能级不稳定,导致增加的HOMO能级。因此,当具有对称结构的化合物用作形成空穴传输层(HTL)的材料时,具有对称结构的化合物和主体之间的HOMO能级有大的差异。因此,具有对称结构的化合物可被用于形成空穴注入层(HIL)而非HTL。
现将更详细地说明通式1化合物的取代基。
根据一个实施方式,在通式1中,R1和R2可各自独立地为卤素、氰基、取代或未取代的C1至C30烷基、取代或未取代的C6至C30芳基、取代或未取代的C3至C30杂芳基、或取代或未取代的C6至C30稠合多环基。R3可为氢、氘、卤素、氰基、取代或未取代的C6至C30芳基、取代或未取代的C3至C30杂芳基或取代或未取代的C6至C30稠合多环基。Ar1和Ar2可各自独立地为取代或未取代的C6至C30芳基、取代或未取代的C3至C30杂芳基、或取代或未取代的C6至C30稠合多环基。
根据另一个实施方式,在通式1中,R1和R2可各自独立地为氢、氘、卤素、氰基、取代或未取代的C1至C20芳基或由以下通式2a至2c中的任一个表示的半族。
在通式2a至2c中,Y1、Y2和Y3各自独立地为由-N=或-C(R21)=表示的连接基团。
Q为由-C(R30)(R31)-、-N(R32)-、-S-或-O-表示的连接基团。
Z1、Z2、R21、R30、R31和R32各自独立地为氢原子、氘、取代或未取代的C1至C20烷基、取代或未取代的C6至C20芳基、取代或未取代的C3至C20杂芳基、取代或未取代的C6至C20稠合多环基、或被C6至C20芳基或C3至C20杂芳基取代的氨基、卤素、氰基、硝基、羟基或羧基。
而且,p为1至7的整数,且*表示结合部位。
在另一个实施方式中,在通式1中,R3可为氢、氘、卤素或由以下通式3a至3c中的任一个表示的半族。
在通式3a至3c中,Y1、Y2和Y3各自独立地为由-N=或-C(R21)=表示的连接基团。
Z1、Z2和R21各自独立地为氢原子、氘、取代或未取代的C1至C20烷基、取代或未取代的C6至C20芳基、取代或未取代的C3至C20杂芳基、取代或未取代的C6至C20稠合多环基、卤素、氰基、硝基、羟基或羧基。
而且,p为1至7的整数,且*表示结合部位。
在通式1中,Ar1和Ar2可为以下通式4a至4g中的任一个。
在通式4a至4g中,Q1和Q2各自独立地为由-C(R30)(R31)-、-N(R32)-、-S-或-O-表示的连接基团。
Z1、Z2、Z3、R30、R31和R32各自独立地为氢原子、氘、取代或未取代的C1至C20烷基、取代或未取代的C6至C20芳基、取代或未取代的C3至C20杂芳基、被C6至C20芳基或C3至C20杂芳基取代的氨基、取代或未取代的C6至C20稠合多环基、卤素、氰基、硝基、羟基或羧基。
而且,p为1至9的整数,q为1或2,r为1至4的整数,且*表示结合部位。
在通式1中,R1和R2可彼此连接形成环,或Ar1和Ar2可彼此连接形成环。
下文将说明这里使用的取代基的代表性基团。定义的取代基的碳原子的数目为非限制性的,并且不限制取代基的性质。
未取代的C1至C60烷基为直链或支链烷基。未取代的C1至C60烷基的非限制性实例包括甲基、乙基、丙基、异丁基、仲丁基、戊基、异戊基、己基、庚基、辛基、壬基、十二烷基等。为获得取代的烷基,未取代的C1至C60烷基的至少一个氢原子可被氘、卤素原子、羟基、硝基、氰基、氨基、脒基、肼、腙、羧基或其盐、磺酸基或其盐、磷酸基或其盐、C1至C10烷基、C1至C10烷氧基、C2至C10烯基、C2至C10炔基、C6至C16芳基或C4至C16杂芳基取代。
未取代的C2至C60烯基为在未取代的C2至C60烷基的中心或末端包括至少一个碳碳双键的基团。未取代的C2至C60烯基的非限制性实例包括乙烯基、丙烯基、丁烯基等。为获得取代的烯基,未取代的C2至C60烷基的至少一个氢原子可被上述与取代的C1至C60烷基相关的取代基取代。
未取代的C2至C60炔基为在上面定义的C2至C60烷基的中心或末端包括至少一个碳碳三键的基团。未取代的C2至C60炔基的非限制性实例包括乙炔、丙炔、苯基乙炔、萘基乙炔、异丙基乙炔、叔丁基乙炔、二苯基乙炔等。为获得取代的炔基,未取代的C2至C60炔基的至少一个氢原子可被上述与取代的C1至C60烷基相关的取代基取代。
未取代的C3至C60环烷基是指C3至C60环类烷基。为获得取代的环烷基,未取代的C3至C60环烷基的至少一个氢原子可被上述与取代的C1至C60烷基相关的取代基取代。
未取代的C1至C60烷氧基具有-OA表示的化学式,其中,A为未取代的C1至C60烷基。未取代的C1至C60烷氧基的非限制性实例包括甲氧基、乙氧基、丙氧基、异丙氧基、丁氧基、戊氧基等。为获得取代的烷氧基,未取代的C1至C60烷氧基的至少一个氢原子可被上述与取代的C1至C60烷基相关的取代基取代。
未取代的C6至C60芳基是指包括至少一个环的C6至C60的碳环芳族体系。当芳基包括至少两个环时,所述环可彼此稠合或通过单键彼此连接。术语“芳基”是指芳族体系,包括,例如苯基、萘基、蒽基等。为获得取代的芳基,未取代的C6至C60芳基的至少一个氢原子可被上述与取代的C1至C60烷基相关的取代基取代。
未取代的C6至C60芳基的非限制性实例包括苯基,C1至C10烷基苯基(例如乙基苯基),卤代苯基(例如邻-、间-和对-氟代苯基及二氯苯基),氰基苯基,二氰基苯基、三氟代甲氧基苯基,联苯基,卤代联苯基,氰基联苯基,C1至C10烷基联苯基,C1至C10烷氧基联苯基,邻-、间-和对-甲苯基,邻-、间-和对-异丙苯基,均三甲苯基,苯氧基苯基,(α,α-二甲基苯)苯基,(N,N′-二甲基)氨基苯基,(N,N′-二苯基)氨基苯基,戊搭烯基,茚基,萘基,卤代萘基(如氟代萘基),C1至C10烷基萘基(例如甲基萘基),C1至C10烷氧基萘基(如甲氧基萘基),氰基萘基,蒽基,薁基,庚搭烯基,苊基,萉基,芴基,蒽喹啉基(anthraquinolyl),甲基蒽基,菲基,三亚苯基,芘基,基,乙基基,苉基,苝基,氯代苝基,戊芬基,并五苯基,四邻亚苯基,己芬基,并六苯基,玉红省基,蔲基,三亚萘基,庚芬基、并七苯基,吡蒽基和卵苯基。
未取代的C3至C60杂芳基是指具有1、2或3个选自N、O、P和S的杂原子的基团。当C3至C60杂芳基包括至少连个环时,上述环可彼此稠合或通过单键彼此连接。未取代的C3至C60杂芳基的非限制性实例包括吡唑基、咪唑基、呃唑基、噻唑基、三唑基、四唑基、呃二唑基、吡啶基、哒嗪基、嘧啶基、三嗪基、咔唑基、吲哚基、喹啉基、异喹啉基和二苯并噻吩基。为获得取代的杂芳基,未取代的C3至C60杂芳基的至少一个氢原子可被上述与取代的C1至C60烷基相关的取代基。
未取代的C6至C60芳氧基具有化学式-OA1,其中A1为上述的C6至C60芳基。未取代C6至C60芳氧基的非限制性实例包括苯氧基等。为获得取代的芳氧基,未取代的C6至C60芳氧基的至少一个氢原子可被上述与取代的C1至C60烷基相关的取代基取代。
未取代C6至C60芳硫基具有化学式-SA1,其中A1为上述的C6至C60芳基。未取代C6至C60芳硫基的非限制性实例包括苯硫基、萘硫基等。为获得取代的芳硫基,未取代C6至C60芳硫基的至少一个氢原子可被上述与取代的C1至C60烷基相关的取代基取代。
未取代C6至C60稠合多环基是指具有至少两个环的取代基,其中至少一个芳环和至少一个非芳环彼此稠合;或在环中具有不饱和基团但是不具有共轭体系的取代基。未取代C6至C60稠合多环基与芳基和杂芳基的区别在于其整体是非芳族的。
在一些实施方式中,通式1的化合物可为以下化合物1至51中的一个,但不限于此。
根据本发明的另一个实施方式,OLED包括第一电极、第二电极及第一电极和第二电极之间的有机层。所述有机层包括上述通式1的化合物。
有机层可包括空穴注入层(HIL)、空穴传输层(HTL)、同时具有空穴注入和空穴传输能力的功能层(下文,称作“H功能层”)、缓冲层、电子阻挡层(EBL)、发光层(EML)、空穴阻挡层(HBL)、电子传输层(ETL)、电子注入层(EIL)和/或同时具有电子传输和电子注入能力的功能层(下文,称作“E功能层”)中的至少一种。
在一些实施方式中,所述有机层可为EML,并且所述通式1的化合物可用作荧光主体、磷光主体或荧光掺杂剂。
在一个实施方式中,OLED可包括EIL、ETL、EML、HIL、HTL或H功能层。EML可包括所述通式1的化合物、以及蒽类化合物、芳胺类化合物或苯乙烯基类化合物。
在一个实施方式中,OLED可包括EIL、ETL、EML、HIL、HTL或H功能层。EML的红色层、绿色层、蓝色层或白色层的任何一个可包括磷光化合物。HIL、HTL或H功能层可包括产生电荷材料。在这方面,所述产生电荷材料可为p型掺杂剂。p型掺杂剂的非限制性实例包括醌衍生物、金属氧化物和含氰化合物。
在一个实施方式中,有机层可包括ETL,并且ETL可包括电子传输有机化合物和金属络合物。金属络合物可为锂络合物。
如这里使用,术语“有机层”是指置于所述第一电极和所述第二电极之间的单层和/或多层。
有机层可包括含所述通式1的化合物的EML。或者,所述有机层可包括HIL、HTL和/或H功能层中的至少一个,并且HIL、HTL和/或H功能层中的至少一个可包括所述通式1的化合物。
图1为说明根据本发明实施方式的有机发光二极管的结构示意图。下文,将参照图1更详细地说明OLED的结构和制造方法。
基板(未显示)可为通常用于OLED的任何基板,并且可为例如具有良好机械强度、热稳定性、透明度、表面平滑度、处理简易性和防水性的玻璃基板或透明塑料基板。
第一电极可应用第一电极材料通过沉积或溅射在基板上形成。当第一电极为阳极时,第一电极材料可选自具有高功函的材料以促进空穴注入。第一电极可为反射电极或透射电极。第一电极材料的非限制性实例包括透明且具有高导电率的氧化铟锡(ITO)、氧化铟锌(IZO)、氧化锡(SnO2)和氧化锌(ZnO)。同样,当镁(Mg)、铝(Al)、铝-锂(Al-Li)、钙(Ca)、镁-铟(Mg-In)或镁-银(Mg-Ag)用作第一电极的材料时,第一电极可形成为反射电极。
第一电极可形成为单层或具有至少两层的多层结构。例如,第一电极可具有包括ITO/Ag/ITO的三层结构,但不限于此。
有机层形成在第一电极上。
有机层可包括HIL、HTL、缓冲层(未显示)、EML、ETL或EIL。
HIL可通过多种方法,例如真空沉积、旋涂、浇注或LB沉积形成在第一电极上。
当HIL通过真空沉积形成时,沉积条件可根据用作形成HIL的材料的化合物、期望的HIL的结构和热特性而变化。例如,沉积条件可为,但不限于约100℃至约500℃的沉积温度,约10-8torr至约10-3torr的真空度,和约至约的沉积速度。
当HIL通过旋涂形成时,涂覆条件可根据用作形成HIL的材料的化合物、期望的HIL的结构和热特性而变化。例如,涂覆条件可为,但不限于约2000rpm至约5000rpm的涂覆速度和约80℃至约200℃的涂覆后的用于除去溶剂的热处理温度。
用于形成HIL的材料可为已知的空穴注入材料。空穴注入材料的非限制性实例包括,但不限于N,N'-二苯基-N,N'-双-[4-(苯基-间甲苯基-氨基)-苯基]-联苯基-4,4'-二胺(DNTPD),酞菁化合物例如铜酞菁、4,4’,4’’-三(3-甲基苯基苯基氨基)三苯胺(m-MTDATA)、N,N’-二(1-萘基)-N,N’-二苯基联苯胺(NPB)、TDATA、2-TNATA、聚苯胺/十二烷基苯磺酸(Pani/DBSA)、聚(3,4-乙烯二氧基噻吩)/聚(4-苯乙烯磺酸酯)(PEDOT/PSS)、聚苯胺/樟脑磺酸(Pani/CSA)和(聚苯胺)/聚(4-苯乙烯磺酸酯)(PANI/PSS)。
HIL的厚度可为约至约在一些实施方式中,HIL的厚度可为约至约当HIL的厚度在这些范围内时,可获得令人满意的空穴注入性质而基本不增加驱动电压。
其次,HTL可通过多种方法,例如真空沉积、旋涂、浇注或LB沉积形成在HIL上。当HTL通过真空沉积或旋涂形成时,沉积或旋涂的条件可根据使用的化合物而变化。然而,通常,沉积或旋涂的条件可与用于形成HIL的条件相似或相同。
用于形成HTL的材料可为通式1的化合物或已知空穴传输材料。空穴传输材料的非限制性实例包括,但不限于咔唑衍生物例如N-苯基咔唑和聚乙烯咔唑,N,N'-双(3-甲基苯基)-N,N'-二苯-[1,1-联苯基]-4,4'-二胺(TPD),4,4’,4”-三(N-咔唑基)三苯胺(TCTA)和N,N’-二(1-萘基)-N,N’-二苯基联苯胺(NPB)。
HTL的厚度可为约至约在一些实施方式中,HTL厚度可为约至约当HTL的厚度在这些范围内时,可获得令人满意的空穴传输性质而基本不增加驱动电压。
H功能层可包括上述的空穴注入材料和空穴传输材料中的至少一种。H功能层的厚度可为约至约在一些实施方式中,HTL的厚度可为约至约当H功能层的厚度在这些范围内时,可获得令人满意的空穴注入性质和空穴传输性质而基本不增加驱动电压。
HIL、HTL和/或H功能层中的至少一种可包括由以下通式300和/或以下通式350表示的化合物中的至少一个:
通式300
通式350
在通式300和通式350中,Ar11、Ar12、Ar21和Ar22各自独立地为取代或未取代的C6至C60亚芳基。
在通式300中,e和f可各自独立地为0至5的整数,例如0、1或2。例如,e可为1且f可为0,但是e和f不限于此。
在通式300和通式350中,R51至R58、R61至R69、R71、R72可各自独立地为氢、氘、卤素原子、羟基、氰基、硝基、氨基、脒基、肼、腙、羧基或其盐、磺酸基或其盐、磷酸基或其盐、取代或未取代的C1至C60烷基、取代或未取代的C2至C60烯基、取代或未取代的C2至C60炔基、取代或未取代的C1至C60烷氧基、取代或未取代的
C3至C60环烷基、取代或未取代的C6至C60芳基、取代或未取代的C6至C60芳氧基、或取代或未取代的C6至C60芳硫基。例如,R51至R58、R61至R69、R71和R72可各自独立地可为氢,氘,卤素原子,羟基,氰基,硝基,氨基,脒基,肼,腙,羧基或其盐,磺酸基或其盐,磷酸基或其盐,C1至C10烷基(例如甲基、乙基、丙基、丁基、戊基、己基等),C1至C10烷氧基(例如甲氧基、乙氧基、丙氧基、丁氧基、戊氧基等),被氘、卤素原子、羟基、氰基、硝基、氨基、脒基、肼、腙、羧基或其盐、磺酸基或其盐和磷酸基或其盐中的至少一个取代的C1至C10烷基或C1至C10烷氧基,苯基,萘基,蒽基,芴基,芘基,或被氘、卤素原子、羟基、氰基、硝基、氨基、脒基、肼、腙、羧基或其盐、磺酸基或其盐、磷酸基或其盐、C1至C10烷基或C1至C10烷氧基中的至少一个取代的苯基、萘基、蒽基、芴基或芘基中的一个。
在通式300中,R59可为苯基,萘基,蒽基,联苯基,吡啶基,或被氘、卤素原子、羟基、氰基、硝基、氨基、脒基、肼、腙、羧基或其盐、磺酸基或其盐、磷酸基或其盐、取代或未取代的C1至C20烷基、或取代或未取代的C1至C20烷氧基中的至少一个取代的苯基、萘基、蒽基、联苯基或吡啶基中的一个。
在一个实施方式中,通式300的化合物可为由以下通式300A表示的化合物,但不限于此:
通式300A
在通式300A中,R51、R62、R61和R59与上面定义的相同。
例如,HIL、HTL或H功能层的至少一种可包括以下化合物301至320中的至少一个,但不限于此。
除了空穴注入材料、空穴传输材料和/或具有空穴注入和空穴传输能力的材料,HIL、HTL或H功能层中的至少一个可进一步包括产生电荷材料,以提高所述层的导电率。
产生电荷材料可为,例如p型掺杂剂。所述p型掺杂剂可为选自醌衍生物、金属衍生物和含氰化合物中的一种,但不限于此。所述p型掺杂剂的非限制性实例包括醌衍生物,例如四氰基醌二甲烷(TCNQ)和2,3,5,6-四氟-四氰基-1,4-苯醌二甲烷(F4-CTNQ);金属氧化物,例如氧化钨和氧化钼;和含氰化合物,例如以下的化合物200等。
化合物200 F4-CTNQ
当HIL、HTL或H功能层进一步包括产生电荷材料时,产生电荷材料可均匀或非均匀分散在这些层中。
缓冲层可置于EML以及HIL、HTL或H功能层中的至少一个之间。缓冲层可通过根据由EML发出的光的波长补偿光学谐振距离而提高效率。缓冲层可包括空穴注入材料和空穴传输材料。同样,缓冲层可包括与包括在HIL、HTL或H功能层(形成在缓冲层的下面)中的一种材料相同的材料。
其次,EML可通过真空沉积、旋涂、浇注或LB沉积形成在HTL、H功能层或缓冲层上。当EML通过真空沉积或旋涂形成时,沉积或旋涂的条件可根据使用的化合物而变化。然而,通常,条件可与形成HIL的条件相似或相同。
EML可包括根据本发明的实施方式的通式1的化合物中的一种。
EML可进一步包括主体。
主体的非限制实例包括Alq3、4,4’-N,N’-二咔唑-联苯基(CBP)、聚(n-乙烯基咔唑)(PVK)、9,10-二(萘-2-基)蒽(ADN)、TCTA、1,3,5-三(N-苯基苯并咪唑-2-基)苯(TPBI)、3-叔丁基-9,10-二(萘-2-基)蒽(TBADN)、E3、联苯乙烯(DSA)和dmCBP(参见下面的化学式),及以下的化合物501至509。
PVK ADN
而且,所述主体可为由以下通式400表示的蒽类化合物。
通式400
在通式400中,Ar111和Ar112各自独立地为取代或未取代的C6至C60亚芳基。Ar113至Ar116各自独立地为C1至C10烷基或取代或未取代的C6至C60芳基。而且,g、h、i和j可各自独立地可为0至4的整数。
例如,在通式400中,Ar111和Ar112可各自独立地为亚苯基、亚萘基、亚菲基、亚芘基,或被苯基、萘基或蒽基中的至少一个取代的亚苯基、亚萘基、亚菲基、芴基或亚芘基中的一个,但不限于此。
在化学式400中,g、h和i可各自独立地为0、1或2。
在通式400中,Ar113至Ar116可各自独立地为被苯基、萘基或蒽基中的至少一个取代的C1至C10烷基,苯基,萘基,蒽基,芘基,菲基,芴基,被氘、卤素原子、羟基、氰基、硝基、氨基、脒基、肼、腙、羧基或其盐、磺酸基或其盐、磷酸基或其盐、C1至C60烷基、C2至C60烯基、C2至C60炔基、C1至C60烷氧基、苯基、萘基、蒽基、芘基、菲基或芴基中的至少一个取代的苯基、萘基、蒽基、芘基、菲基或芴基,或
中的一个,但不限于此。
例如,通式400的蒽类化合物可为以下化合物的一个,但不限于此。
而且,主体可为由以下通式401表示的蒽类化合物。
通式401
在通式401中,Ar122至Ar125与上述通式400的Ar113的说明中定义的相同。
在通式401中,Ar126至Ar127可各自独立地为C1至C10烷基(例如甲基、乙基或丙基)。
在通式401中,k和l可各自独立地为0至4的整数。例如,k和l可各自独立地为0、1或2。
例如,通式401的蒽类化合物可为以下化合物的一个,但不限于此。
当OLED为全色OLED时,EML可被图案化成红色EML、绿色EML和蓝色EML。
红色EML、绿色EML或蓝色EML的至少一个可包括以下掺杂剂(ppy=苯基吡啶)的一个。
DPAVBi
红色掺杂剂的实例包括但不限于以下化合物。
绿色掺杂剂的实例包括但不限于以下化合物。
EML中包括的掺杂剂可为以下说明的Pd络合物或Pt络合物,但不限于此。
而且,EML中包括的掺杂剂可为以下说明的Os络合物,但不限于此。
当EML包括主体与掺杂剂时,通常基于100重量份的主体,掺杂剂的量通常可为约0.01至约15重量份,但不限于此。
EML的厚度可为约至约在一些实施方式中,EML的厚度可为约至约当ETL的厚度在这些范围内时,可获得良好的放光性质而基本不提高驱动电压。
接着,通过多种方法,例如真空沉积、旋涂或浇注在EML上形成ETL。当通过真空沉积或旋涂形成ETL时,沉积或涂覆的条件可根据使用的化合物而变化。然而,通常,沉积或旋涂的条件可与形成HIL的条件相似或相同。用于形成ETL的材料可为已知的稳定地传输由阴极注入的电子的电子传输材料。电子传输材料的实例可包括,但不限于喹啉衍生物,例如三(8-羟基喹啉)铝(Alq3)、TAZ、Balq、双(10-羟基苯并喹啉)铍(Bebq2)、ADN、以下的化合物201和以下的化合物202。
化合物201 化合物202
BCP
ETL的厚度可为约至约在一些实施方式中,ETL的厚度可为约150至约当ETL的厚度在这些范围内时,可获得令人满意的电子传输性质而基本不提高驱动电压。
ETL可包括已知的电子传输有机化合物和含金属的材料。
含金属的材料可包括Li络合物。Li络合物的实例可包括,但不限于羟基喹啉锂(LiQ)和以下的化合物203。
化合物203
同样,促进电子由阴极注入的EIL可形成在ETL上,并且用于形成EIL的材料没有具体的限制。
用于形成EIL的材料可包括已知的用于形成EIL的材料,例如LiF、NaCl、CsF、Li2O或BaO。EIL的沉积条件可根据使用的化合物而变化。然而,通常,条件可与形成HIL的条件相似或相同。
EIL的厚度可为约至约在一些实施方式中,EIL的厚度可为约至约当EIL的厚度在这些范围内时,可获得令人满意的电子注入性质而基本上不提高驱动电压。
第二电极形成在这些有机层上。第二电极可为电子注入电极的阴极。此处,用于形成第二电极的金属可包括具有低功函的材料,例如金属、合金、导电化合物或它们的混合物。特别地,第二电极可形成为锂(Li)、镁(Mg)、铝(Al)、铝-锂(Al-Li)、钙(Ca)、镁-铟(Mg-In)或镁-银(Mg-Ag)的薄膜,从而透明。为了获得顶发光型的OLED,第二电极可用ITO或IZO形成为透明电极。
已经参照图1说明了OLED,但不限于此。
此外,当EML包括磷光掺杂剂时,可用多种方法例如真空沉积、旋涂、浇注或LB沉积在HTL和EML之间或H-功能层和EML之间形成HBL,以防止三线态激子或空穴扩散至ETL中。当HBL通过真空沉积或旋涂形成时,沉积或涂覆的条件可根据使用的化合物而变化。然而,通常,沉积或涂覆的条件可与形成HIL的条件相似或相同。用于形成HBL的材料可为已知的空穴阻挡材料,例如呃二唑衍生物、三唑衍生物或菲咯啉衍生物。例如,用于形成HBL的材料可为以下的BCP。
HBL的厚度可为约至约例如约至约当HBL的厚度在这些范围内时,可获得令人满意的空穴阻挡性质而基本上不提高驱动电压。
OLED可用在各种类型的平板显示装置中,例如无源矩阵OLED和有源矩阵OLED。特别是,在有源矩阵OLED中,形成在基板侧的为像素电极的第一电极可被电连接到薄膜晶体管的源极或漏极。同样,OLED可用于双屏平板显示装置中。
OLED的有机层可用根据本发明的实施方式的通式1的化合物沉积形成,或用湿法工艺制备的在液体状态的根据本发明的实施方式的通式1的化合物形成。
现将参照下面的合成例和实施例说明根据本发明的实施方式的OLED。提供这些实施例仅为说明的目的,而非旨在限制本发明的范围。
实施例
合成例:中间体1
1)8,9-二氢-4H-环戊[def]菲的合成
将10.0g(52.6mmol)的4H-环戊[def]菲和8.40g的5%Pd/C在标准反应瓶中溶于70ml的乙醇,并且所得的溶液在维持40psi氢压力下的室温搅拌24小时。反应完成后,过滤反应溶液,并蒸发溶剂以获得8.60g的白色目标材料(产率:85.0%)。
2)2-溴-8,9-二氢-4H-环戊[def]菲的合成
将8.5g(44.2mmol)的8,9-二氢-4H-环戊[def]菲溶于80ml的CCl4,然后将7.1g(44.2mmol)的Br2在0℃缓慢加入其中。反应溶液在室温下搅拌4小时,然后加入10%的Na2SO3以分离有机层。获得的有机层用硫酸镁干燥,溶剂从其中蒸发,然后所得的产物用正己烷重结晶。结果,获得9.6克的目标材料(产率:80%)。
3)中间体1a的合成
将9.3g(34.3mmol)的2-溴-8,9-二氢-4H-环戊[def]菲和8.8g(36.0mmol)的邻四氯苯醌溶于70ml的二甲苯,然后在110℃搅拌混合物72小时。然后,反应溶液冷却至室温,并且溶剂从中蒸发以获得残留物。所述残留物用硅胶柱色谱法提纯以获得7.48g的中间体1a(产率:81%)。获得的化合物用1H NMR和质谱分析/快原子轰击(MS/FAB)确认。
C15H9Br:计算值267.99,实测值267.97
1H NMR(CDCl3,400MHz)δ7.98(2H,s),7.79(2H,s),7.73(2H,s),6.94(dd,1H),4.28(2H,s)
4)中间体1的合成
将7.3g(27.1mmol)的中间体1a、73.2g(216.8mmol)的叔丁醇钾和60ml的HMPA溶于60ml的DMSO,然后在室温下搅拌所得的产物1小时。接着,将30.6g(216.8mmol)的CH3I在0℃缓慢加入到反应溶液中,搅拌产物30小时,加入40ml的水,用70ml的二氯甲烷萃取所得产物3次。获得的有机层用硫酸镁干燥,然后从中蒸发溶剂以获得残留物。所述残留物用硅胶柱色谱法提纯以获得6.3g中间体1(产率:78%)。获得的化合物用1H NMR和MS/FAB确认。
C17H13Br:计算值296.02,实测值296.05
1H NMR(CDCl3,400MHz)δ7.98(2H,s),7.79(2H,s),7.73(2H,s),6.94(dd,1H),1.93(m,6H)
合成例:中间体2
1)2,6-二溴-8,9-二氢-4H-环戊[def]菲的合成
除了使用的Br2的量为14.2g(88.4mmol)外,用与合成中间体1的2)中相同的方法获得8.9g的目标材料(产率:57%)。
2)中间体2a的合成
除了使用2,6-二溴-8,9-二氢-4H-环戊[def]菲代替2-溴-8,9-二氢-4H-环戊[def]菲外,用与合成中间体1的3)中相同的方法获得6.8g的中间体2a(产率:80%)。获得的化合物用1H NMR和MS/FAB确认。
C15H8Br2:计算值345.90,实测值345.92
1H NMR(CDCl3,400MHz)δ7.98(2H,s),7.79(2H,s),7.73(2H,s),4.28(2H,s)
3)中间体2的合成
除了使用中间体2a代替中间体1a外,用与合成中间体1的4)中相同的方法获得5.8g的中间体2(产率:79%)。获得的化合物用1H NMR和MS/FAB确认。
C15H8Br2:计算值345.90,实测值345.92
1H NMR(CDCl3,400MHz)δ7.98(2H,s),7.79(2H,s),7.73(2H,s),1.93(s,6H)
合成例:中间体3
1)2-溴-环戊[def]菲-4-酮的合成
将7.4g(27.5mmol)的中间体1a和310g的MnO2溶于200ml的苯中,然后在80℃搅拌所得的溶液20小时。获得的反应产物冷却至室温,并过滤以从中去除MnO2,滤液用50ml的CHCl3、50ml的THF和50ml的甲醇以此顺序清洗。蒸发所得的滤液以获得残留物。所述残留物用丙酮重结晶以获得3.74g的目标材料(产率:48%)。
2)中间体3a的合成
将3.05g(13.1mmol)的2-溴联苯溶于50ml的THF中,然后在-78℃缓慢加入15.4ml(26.2mmol)的叔丁基锂(在戊烷中1.7M)。在-78℃搅拌所得的溶液1小时,30分钟缓慢加入3.7g(13.1mmol)的2-溴-环戊[def]菲-4-酮,然后所得的反应溶液在-78℃搅拌30分钟,然后在室温进一步搅拌3小时。然后,加入40ml的水到反应溶液中,并且所得的反应溶液用50ml的乙酸乙酯萃取3次。获得的有机层用硫酸镁干燥,从中蒸发溶剂以获得残留物。所述残留物用硅胶柱色谱法提纯以获得5.44g中间体3a(产率:95%)。
3)中间体3的合成
将5.4g(12.3mmol)的中间体3a溶于50ml的乙酸中,然后在0℃缓慢加入3ml的浓缩的盐酸,然后搅拌所得的溶液2小时。过滤在反应中获得的白色固体,然后用乙酸乙酯和乙醇清洗以获得4.70g的中间体3(产率:90%)。获得的化合物用1H NMR和MS/FAB确认。
C27H15Br:计算值418.04,实测值418.05
1H NMR(CDCl3,400MHz)δ7.22-7.26(m,8H),7.70(s,2H),7.80(s,2H),8.00(s,2H)
合成例:中间体4
中间体4a的合成
将3.7g(13.1mmol)的2-溴-环戊[def]菲-4-酮溶于50ml醚和20ml的THF,然后缓慢加入4.55g(13.1mmol)的(4-(二苯胺)-苯基)-溴化镁,在80℃搅拌所得的溶液3小时。反应溶液冷却至室温,加入30ml的水,用1N的盐酸溶液调节反应溶液的pH至3~4,所得的溶液用50ml的乙酸乙酯萃取3次。用硫酸镁干燥获得的有机层,然后从中蒸发溶剂以获得残留物。所述残留物用硅胶柱色谱法提纯以获得4.98的中间体4a(产率:72%)。
中间体4的合成
将4.98g(9.43mmol)的中间体4a溶于50ml的苯,然后缓慢加入2.52mL(28.3mmol)的三氟甲磺酸,在80℃搅拌所得的溶液2小时。然后,反应溶液冷却至室温,加入40ml的水到反应溶液中,然后所得的反应溶液用50ml的乙酸乙酯萃取3次。获得的有机层用硫酸镁干燥,从中蒸发溶剂以获得残留物。残留物用乙酸乙酯-己烷重结晶以获得3.9g的中间体4(产率:70%)。获得的化合物用1H NMR和MS/FAB确认。
C39H26BrN:计算值587.12,实测值587.12
1H NMR(CDCl3,400MHz)δ7.97(s,1H),7.84(d,1H),7.79-7.78(m,2H),7.63(d,1H),7.51(d,1H),7.41-7.35(m,2H),7.28-7.18(m,7H),7.02-6.98(m,2H),6.88-6.85(m,2H),6.66-6.61(m,3H),6.51-6.48(m,4H)
合成例
1)化合物1的合成
将4.5g(15.1mmol)的中间体1、6.40g(16.6mmol)的双-联苯-4-基-胺、0.28g(0.3mmol)的Pd2(dba)3、0.06g(0.3mmol)的P(tBu)3和2.18g(22.7mmol)的NaOtBu溶于70ml的甲苯,然后在80℃搅拌所得的溶液4小时。然后,反应溶液冷却至室温,加入40ml的水到反应溶液中,并且所得的反应溶液用50ml的乙酸乙酯萃取3次。获得的有机层用硫酸镁干燥,溶剂从其中蒸发以获得残留物。所述残留物用硅胶柱色谱法提纯以获得6.10g的化合物1(产率:75%)。获得的化合物用1HNMR和MS/FAB确认。
C41H31N:计算值537.25,实测值537.23
1H NMR(CDCl3,400MHz)δ7.93(d,1H),7.86(d,1H),7.84-7.81(m,5H),7.73-7.64(m,9H),7.62-7.58(m,2H),7.51(t,1H),7.53(d,1H),6.92(d,1H),6.73-6.70(m,4H),1.92(s,6H)
2)化合物4的合成
除了使用(9,9-二甲基-9H-芴-2-基)-苯基-胺代替双-联苯-4-基-胺外,用与化合物1的合成中相同的方法获得5.45g的化合物4(产率:72%)。获得的化合物用1H NMR和MS/FAB确认。
C38H31N:计算值501.25,实测值501.25
1H NMR(CDCl3,400MHz)δ7.97(d,1H),7.92(d,1H),7.86(d,1H),7.84-7.80(m,2H),7.67(d,1H),7.56-7.49(m,2H),7.43(d,1H),7.34-7.26(m,4H),6.95-6.84(m,3H),6.68(d,1H),6.53-6.50(m,2H),1.93(s,6H),1.63(s,6H)
3)化合物6的合成
将5.5g(14.6mmol)的中间体2、1.78g(14.6mmol)的苯基硼酸、0.84g(0.73mmol)的Pd(PPh3)4和6.05g(43.8mmol)的K2CO3溶于60ml的THF和40ml的H2O中,然后在80℃搅拌所得的溶液24小时。然后,反应溶液冷却至室温,加入40ml的水到反应溶液中,并且所得的反应溶液用50ml的乙酸乙酯萃取3次。获得的有机层用硫酸镁干燥,从中蒸发溶剂以获得残留物。所述残留物用硅胶柱色谱法提纯以获得3.92g的中间体5a(产率:72%)。3.9g(10.4mmol)的中间体5a、3.78g(10.4mmol)的联苯-4-基-(9,9-二甲基-9H-芴-2-基)-胺、0.19g(0.21mmol)的Pd2(dba)3、0.04g(0.21mmol)的P(tBu)3和1.50g(15.6mmol)的NaOtBu溶于60ml的甲苯中,然后在80℃搅拌所得的溶液3小时。然后,反应溶液冷却至室温,加入30ml的水到反应溶液中,所得的反应溶液用50ml的乙酸乙酯萃取3次。获得的有机层用硫酸镁干燥,从中蒸发溶剂以获得残留物。所述残留物用硅胶柱色谱法提纯以获得5.24g的化合物6(产率:77%)。获得的化合物用1H NMR和MS/FAB确认。
C50H39N:计算值653.31,实测值653.32
1H NMR(CDCl3,400MHz)δ8.19(d,1H),7.97(d,1H),7.90-7.88(m,2H),7.85-7.79(m,3H),7.73-7.58(m,10H),7.55-7.51(m,2H),7.47(d,1H),7.34-7.30(m,2H),6.94-6.90(m,2H),6.68-6.65(m,3H),1.93(s,6H),1.65(s,6H)
4)化合物7的合成
除了使用(9,9-二甲基-9H-芴-2-基)-(4-萘-1-基-苯基)-胺代替双-联苯-4-基-胺外,用与化合物1的合成中相同的方法获得6.54g的化合物7(产率:69%)。获得的化合物用1H NMR和MS/FAB确认。
C48H37N:计算值627.29,实测值627.30
1H NMR(CDCl3,400MHz)δ8.03-8.00(m,2H),7.97(d,1H),7.91(d,1H),7.86(d,1H),7.84-7.79(m,3H),7.72-7.63(m,5H),7.57-7.49(m,2H),7.45-7.41(m,2H),7.35-7.32(m,2H),7.17(t,1H),6.97(d,1H),6.93(d,1H),6.70(d,1H),6.56(m,2H),1.92(s,6H),1.63(s,6H)
5)化合物8的合成
除了使用联苯-3-基-(9,9-二甲基-9H-芴-2-基)-胺代替双-联苯-4-基-胺外,用与化合物1的合成中相同的方法获得6.72g的化合物8(产率:77%)。获得的化合物用1H NMR和MS/FAB确认。
C44H35N:计算值577.28,实测值577.25
1H NMR(CDCl3,400MHz)δ7.98(d,1H),7.93(d,1H),7.87(d,1H),7.84-7.77(m,4H),7.68(d,1H),7.66-7.59(m,3H),7.55-7.49(m,2H),7.46-7.42(m,2H),7.34-7.28(m,3H),7.14(t,1H),6.97(d,1H),6.91(d,1H),6.83(d,1H),6.47(d,1H),1.92(s,6H),1,64(s,6H)
6)化合物9的合成
除了使用(9,9-联苯-9H-芴-2-基)-苯胺代替双-联苯-4-基-胺外,用与化合物1的合成中相同的方法获得6.33g的化合物9(产率:67%)。获得的化合物用1H NMR和MS/FAB确认。
C48H35N:计算值628.80,实测值628.81
1H NMR(CDCl3,400MHz)δ8.07(d,1H),7.93(d,1H),7.87(d,1H),7.83(d,1H),7.67-7.62(m,2H),7.53(d,2H),7.48(d,1H),7.40-7.27(m,13H),7.00(d,1H),6.93(d,1H),6.85(t,1H),6.78(d,1H),6.74(d,1H),6.48-6.45(m,2H),1.93(s,6H)
7)化合物10的合成
除了使用(9,9-螺-芴-2-基)-苯基-胺代替双-联苯-4-基-胺外,用与化合物1的合成中相同的方法获得6.50g的化合物10(产率:69%)。获得的化合物用1H NMR和MS/FAB确认。
C48H33N:计算值623.78,实测值623.80
1H NMR(CDCl3,400MHz)δ8.05(d,1H),7.99(d,2H),7.83(d,1H),7.79(d,1H),7.73(d,2H),7.67-7.61(m,4H),7.53-7.51(m,1H),7.43(d,1H),7.41-7.35(m,4H),7.31-7.26(m,2H),7.01-6.93(m,6H),6.85(t,1H),6.52-6.49(m,2H),1,93(s,6H)
8)化合物16的合成
除了用中间体3代替中间体1及用(4-氟-苯基)-(9-苯基-9H-咔唑-3-基)-胺代替双-联苯-4-基-胺外,用与化合物1的合成中相同的方法获得7.51g的化合物16(产率:72%)。获得的化合物用1H NMR和MS/FAB确认。
C51H31FN2:计算值690.25,实测值690.23
1H NMR(CDCl3,400MHz)δ8.21(d,1H),8.07(d,2H),7.93(d,1H),7.85(d,1H),7.81(d,1H),7.74-7.69(m,5H),7.66-7.55(m,4H),7.52-7.47(m,6H),7.25-7.19(m,2H),7.11(d,1H),6.91(d,2H),6.85-6.80(m,4H),6.53(t,1H)
9)化合物17的合成
除了用联苯-4-基-(9-萘-1-基-9H-咔唑-3-基)-胺代替双-联苯-4-基-胺外,用与化合物1的合成中相同的方法获得7.05g的化合物17(产率:69%)。获得的化合物用1H NMR和MS/FAB确认。
C51H36N2:计算值676.29,实测值676.30
1H NMR(CDCl3,400MHz)δ8.23(d,1H),8.06(d,1H),7.91(d,1H),7.84(d,1H),7.78(d,1H),7.72-7.65(m,5H),7.61(d,1H),7.55-7.47(m,7H),7.43-7.25(m,7H),7.16(d,1H),7.05(d,1H),6.98(d,1H),6.81-6.77(m,2H),1.92(s,6H)
10)化合物18的合成
除了用(9,9-二甲基-9H-芴-2-基)-(7-苯基-7H-苯并[c]咔唑-10-基)-胺代替双-联苯-4-基-胺外,用与化合物1的合成中相同的方法获得6.82g的化合物18(产率:63%)。获得的化合物用1H NMR和MS/FAB确认。
C54H40N2:计算值716.32,实测值716.33
1H NMR(CDCl3,400MHz)δ8.28(d,1H),8.15(d,1H),8.07(d,1H),7.91(d,1H),7.85(d,1H),7.80-7.76(m,3H),7.71-7.65(m,4H),7.61-7.56(m,5H),7.49-7.38(m,4H),7.33(d,1H),7.25-7.21(m,2H),7.05-7.00(m,2H),6.94(d,1H),6.86(d,1H),1.93(s,6H),1.63(s,6H)
11)化合物21的合成
除了用中间体4代替中间体1及用萘-1-基-苯基-胺代替双-联苯-4-基-胺外,用与化合物1的合成中相同的方法获得4.71g的化合物21(产率:70%)。获得的化合物用1H NMR和MS/FAB确认。
C55H38N2:计算值726.30,实测值726.31
1H NMR(CDCl3,400MHz)δ8.11(d,1H),7.92(d,1H),7.80(d,1H),7.72-7.65(m,4H),7.61(d,1H),7.57(t,1H),7.52-7.46(m,4H),7.42-7.31(m,8H),7.16(d,1H),7.02(d,1H),6.98-6.92(m,4H),6.84-6.81(m,2H),6.68-6.63(m,3H),6.57-6.52(m,4H),6.48-6.45(m,2H)
12)化合物22的合成
除了用(4-(9H-咔唑-9基)-苯基)-溴化镁代替(4-(二苯胺)-苯基)-溴化镁,及用联苯-4-基-对甲苯胺代替双-联苯-4-基-胺外,用与化合物21的合成中相同的方法获得4.83g的化合物22(产率:68%)。获得的化合物用1H NMR和MS/FAB确认。
C58H40N2:计算值764.32,实测值764.33
1H NMR(CDCl3,400MHz)δ8.11(d,2H),7.91(d,1H),7.84-7.82(m,2H),7.78(d,1H),7.73-7.65(m,5H),7.62-7.45(m,7H),7.41-7.38(m,3H),7.35-7.28(m,4H),7.20-7.18(m,2H),7.04(d,1H),6.83-6.79(m,4H),6.67-6.64(m,2H),6.61-6.57(m,3H),2.30(s,3H)
13)化合物24的合成
除了用(4-(9-萘-1-基-10-苯基-蒽))-溴化镁代替(4-(二苯胺)-苯基)-溴化镁,及用二苯胺代替双-联苯-4-基-胺外,用与化合物21的合成中相同的方法获得4.65g的化合物24(产率:76%)。获得的化合物用1H NMR和MS/FAB确认。
C63H41N:计算值811.32,实测值811.34
1H NMR(CDCl3,400MHz)δ7.95-7.91(m,3H),7.82-7.75(m,5H),7.64-7.60(m,2H),7.57-7.54(m,2H),7.47-7.38(m,5H),7.32-7.27(m,3H),7.21-7.13(m,8H),7.08(t,1H),6.97(d,1H),6.86(t,2H),6.79-6.75(m,2H),6.66-6.63(m,2H),6.58(t,1H),6.53-6.50(m,4H)
14)化合物25的合成
除了用(9,9-二甲基-9H-芴-2-基)-溴化镁代替(4-(二苯胺)-苯基)-溴化镁,及用双-联苯-3-基-胺代替双-联苯-4-基-胺外,用与化合物21的合成中相同的方法获得5.19g的化合物25(产率:72%)。获得的化合物用1H NMR和MS/FAB确认。
C60H43N:计算值777.34,实测值777.34
1H NMR(CDCl3,400MHz)δ8.02(d,1H),7.89(d,1H),7.82-7.77(m,4H),7.69-7.59(m,11H),7.55-7.51(m,2H),7.46-7.43(m,3H),7.36-7.27(m,8H),7.12(t,2H),6.87(d,1H),6.65(t,1H),6.53-6.50(m,2H),6.35(d,1H),1.52(s,6H)
15)化合物26的合成
除了用(3-苯并噻吩基)-溴化镁代替(4-(二苯胺)-苯基)-溴化镁,及用联苯-3-基-(9,9-二甲基-9H-芴-2-基)-胺代替双-联苯-4-基-胺外,用与化合物21的合成中相同的方法获得5.24g的化合物26(产率:70%)。获得的化合物用1H NMR和MS/FAB确认。
C60H41NS:计算值807.30,实测值807.31
1H NMR(CDCl3,400MHz)δ8.23(d,2H),7.98(d,1H),7.95-7.90(m,2H),7.85-7.78(m,3H),7.76(d,1H),7.71-7.56(m,8H),7.49-7.46(m,1H),7.42-7.29(m,11H),7.22(d,1H),7.18(t,1H),6.99(d,1H),6.86(d,1H),6.64(t,1H),6.47(d,1H),1.62(s,6H)
16)化合物28的合成
除了用(9,9-联苯基-9H-芴-2-基)-[4-(9-苯基-9H-咔唑-3-基)-苯基]-胺代替双-联苯-4-基-胺外,用与化合物1的合成中相同的方法获得7.07g的化合物28(产率:63%)。获得的化合物用1H NMR和MS/FAB确认。
C56H42N2:计算值742.33,实测值742.35
1H NMR(CDCl3,400MHz)δ8.23(d,1H),8.16-8.14(m,1H),7.87-7.80(m,3H),7.76-7.67(m,6H),7.62-7.57(m,5H),7.51-7.39(m,5H),7.36-7.30(d,2H),7.23-7.19(m,2H),6.98-6.93(m,2H),6.79-6.75(m,3H),1.94(s,6H),1.63(s,6H)
17)化合物29的合成
除了用双-(9,9-联苯基-9H-芴-2-基)-胺代替双-联苯-4-基-胺外,用与化合物1的合成中相同的方法获得6.25g的化合物29(产率:67%)。获得的化合物用1H NMR和MS/FAB确认。
C47H39N:计算值617.31,实测值617.30
1H NMR(CDCl3,400MHz)δ7.96(d,2H),7.92(d,1H),7.85(d,1H),7.82(s,3H),7.72(d,1H),7.67-7.60(m,3H),7.52(d,1H),7.37-7.31(m,4H),7.00(d,1H),6.91(d,2H),6.70(d,2H),1.92(s,6H),1.63(s,12H)
18)化合物34的合成
除了用二苯并呋喃-2-基-(9-苯基-9H-咔唑-3-基)-胺代替双-联苯-4-基-胺外,用与化合物1的合成中相同的方法获得6.10g的化合物34(产率:63%)。获得的化合物用1HNMR和MS/FAB确认。
C47H32N2O:计算值640.25,实测值640.23
1H NMR(CDCl3,400MHz)δ8.22(d,1H),7.92(d,1H),7.85-7.82(m,2H),7.75-7.72(m,2H),7.68(d,1H),7.66(d,1H),7.63(d,1H),7.57-7.49(m,6H),7.46-7.37(m,3H),7.35-7.25(m,5H),7.07-7.03(m,2H),6.97(d,1H),1.93(s,6H)
19)化合物35的合成
除了用(4-咔唑-9基-苯基)-[1,1′;3′,1"]三联苯-5′-基-胺代替双-联苯-4-基-胺外,用与化合物1的合成中相同的方法获得7.22g的化合物35(产率:68%)。获得的化合物用1H NMR和MS/FAB确认。
C53H38N2:计算值702.30,实测值702.31
1H NMR(CDCl3,400MHz)δ8.11(d,2H),7.94(d,1H),7.88-7.79(m,6H),7.73-7.69(m,2H),7.65-7.56(m,5H),7.48-7.40(m,8H),7.37(d,1H),7.28-7.23(m,2H),7.03(d,2H),6.99(d,1H),6.89-6.85(m,2H),1.92(s,6H)
20)化合物36的合成
除了用双-(4-咔唑-9-基-苯基)-胺代替双-联苯-4-基-胺外,用与化合物1的合成中相同的方法获得7.13g的化合物36(产率:66%)。获得的化合物用1H NMR和MS/FAB确认。
C53H37N3:计算值715.30,实测值715.32
1H NMR(CDCl3,400MHz)δ8.11(d,4H),7.93(d,1H),7.87(d,1H),7.83(d,1H),7.70(d,1H),7.59-7.49(m,13H),7.43(d,1H),7.37-7.33(m,4H),6.95-6.92(m,5H),1.94(s,6H)
21)化合物37的合成
除了用3-(4-吡啶并[3,2-b]吲哚-5-基-苯胺基)-苯基氰代替双-联苯-4-基-胺外,用与化合物1的合成中相同的方法获得5.31g的化合物37(产率:61%)。获得的化合物用1H NMR和MS/FAB确认。
C41H28N4:计算值576.23,实测值576.23
1H NMR(CDCl3,400MHz)δ8.71(d,1H),8.31(d,1H),7.92(d,1H),7.85-7.81(m,2H),7.79-7.73(m,2H),7.58-7.51(m,3H),7.47-7.36(m,8H),7.01-6.93(m,3H),6.63(d,1H),1.92(s,6H)
22)化合物41的合成
除了用N,N-二-[4-(N,N-二苯胺)-苯基]-胺代替双-联苯-4-基-胺外,用与化合物1的合成中相同的方法获得7.07g的化合物41(产率:65%)。获得的化合物用1H NMR和MS/FAB确认。
C53H41N3:计算值719.33,实测值719.34
1H NMR(CDCl3,400MHz)δ7.92(d,1H),7.86(d,1H),7.81(d,1H),7.68(d,1H),7.53(t,1H),7.43(d,1H),7.28-7.23(m,8H),7.02(d,1H),6.96-6.87(m,12H),6.58-6.55(m,8H),1.95(s,6H)
23)化合物42的合成
除了用N,N-二-[4-(N,N-二苯胺)-联苯基]-胺代替双-联苯-4-基-胺外,用与化合物1的合成中相同的方法获得8.30g的化合物42(产率:62%)。获得的化合物用1H NMR和MS/FAB确认。
C65H49N3:计算值871.39,实测值871.40
1H NMR(CDCl3,400MHz)δ7.94(d,1H),7.86(d,1H),7.83(d,1H),7.70-7.62(m,9H),7.54(t,1H),7.48(d,1H),7.35-7.30(m,8H),7.17-7.13(m,4H),7.02(d,1H),6.96-6.91(m,4H),6.83-6.79(m,4H),6.56-6.52(m,8H),1.92(s,6H)
24)化合物43的合成
除了用N4′-[1,1′-联苯基]-4-基-N4,N4-联苯基-[1,1′-联苯基]-4,4′-二胺代替双-联苯-4-基-胺外,用与化合物1的合成中相同的方法获得6.81g的化合物43(产率:62%)。获得的化合物用1H NMR和MS/FAB确认。
C53H40N2:计算值704.32,实测值704.33
1H NMR(CDCl3,400MHz)δ7.93(d,1H),7.87(d,1H),7.86-7.82(m,3H),7.75-7.71(m,2H),7.70-7.60(m,8H),7.55(t,1H),7.48(d,1H),7.37-7.32(m,4H),7.06-7.02(m,2H),6.93(d,1H),6.89-6.85(m,2H),6.81-6.73(m,4H),6.62-6.58(m,4H),1.95(s,6H)
25)化合物45的合成
除了用N4,N4′-二-1-萘基-N4-苯基]-[1,1′-联苯基]-4,4′-二胺代替双-联苯-4-基-胺外,用与化合物1的合成中相同的方法获得7.37g的化合物45(产率:67%)。获得的化合物用1H NMR和MS/FAB确认。
C55H40N2:计算值728.32,实测值728.32
1H NMR(CDCl3,400MHz)δ8.16(d,1H),8.11(d,1H),7.87(d,2H),7.75(d,1H),7.68(d,1H),7.63(d,1H),7.52-7.41(m,11H),7.35-7.25(m,4H),7.12-7.07(m,2H),6.97-6.93(m,2H),6.88-6.83(m,3H),6.79-6.75(t,1H),6.66-6.63(m,2H),6.59-6.56(m,2H),1.93(s,6H)
26)化合物47的合成
除了用4′-(9H-咔唑-9-基)-N-苯基-[1,1′-联苯基]-4-胺代替双-联苯-4-基-胺外,用与化合物1的合成中相同的方法获得6.63g的化合物47(产率:70%)。获得的化合物用1H NMR和MS/FAB确认。
C47H34N2:计算值626.27,实测值626.28
1H NMR(CDCl3,400MHz)δ8.12(d,2H),7.94(d,1H),7.87(d,1H),7.83(d,1H),7.79-7.75(m,2H),7.71-7.65(m,5H),7.61-7.56(m,8H),7.48-7.43(m,2H),7.15-7.10(m,2H),7.04-7.01(m,2H),6.83-6.79(m,2H),1.93(s,6H)
27)化合物48的合成
除了用N,N,N′,N′-四苯基-9H-咔唑-3,6-二胺代替双-联苯-4-基-胺外,用与化合物1的合成中相同的方法获得7.48g的化合物48(产率:69%)。获得的化合物用1H NMR和MS/FAB确认。
C53H39N3:计算值717.31,实测值717.32
1H NMR(CDCl3,400MHz)δ8.17(d,1H),7.95(d,1H),7.88(d,1H),7.79(d,1H),7.68(d,2H),7.56-7.52(m,3H),7.41(d,1H),7.25-7.19(m,9H),6.88-6.82(m,6H),6.63-6.60(m,8H),1.95(s,6H)
28)化合物49的合成
除了用B-(4,6-联苯基-1,3,5-三嗪-2-基)-硼酸代替苯基硼酸,及用二苯胺代替联苯基-4-基-(9,9-二甲基-9H-芴-2-基)-胺外,用与化合物6的合成中相同的方法获得5.40g的化合物49(产率:60%)。获得的化合物用1H NMR和MS/FAB确认。
C44H32N4:计算值616.26,实测值616.27
1H NMR(CDCl3,400MHz)δ9.22(s,1H),8.80-8.77(m,5H),7.83(d,1H),7.65(t,4H),7.56-7.52(m,4H),7.29-7.25(m,4H),7.01-6.95(m,3H),6.62-6.58(m,4H),1.94(s,6H)
29)化合物50的合成
除了用3-吡啶基硼酸代替苯基硼酸,及用萘-1-基-苯基-胺代替联苯基-4-基-(9,9-二甲基-9H-芴-2-基)-胺外,用与化合物6的合成中相同的方法获得4.72g的化合物50(产率:63%)。获得的化合物用1H NMR和MS/FAB确认。
C38H28N2:计算值512.23,实测值512.25
1H NMR(CDCl3,400MHz)δ9.03(d,1H),8.69-8.67(m,1H),8.11(d,1H),8.06(d,2H),7.86(d,1H),7.50-7.39(m,6H),7.37-7.34(m,3H),7.15-7.11(m,2H),6.91(d,1H),6.89-6.86(m,2H),6.53-6.50(m,2H),1.93(s,6H)
实施例1
为制备阳极,将15Ω/cm2 康宁ITO玻璃基板切成50mm×50mm×0.7mm的大小,在异丙醇和纯水中的每个用超声波清洗5分钟,然后用紫外线和臭氧清洗30分钟。所述ITO玻璃基板安装在真空沉积器上。
将2-TNATA真空沉积在ITO玻璃基板上以形成具有厚度的HIL,并将化合物6真空沉积在HIL上以形成具有厚度的HIL。
接着,将作为蓝色荧光主体的9,10-二-萘-2-基-蒽(DNA)和作为蓝色荧光掺杂剂的4,4’-双[2-(4-(N,N-二苯胺)苯基)乙烯基)联苯(DPAVBi)以98∶2的重量比例共沉积在HTL上以形成具有厚度的EML。
接着,将Alq3沉积在EML上以形成具有厚度的ETL,LiF沉积在ETL上以形成具有厚度的EIL,并将Al沉积在EIL上以形成具有厚度的LiF/Al电极(阴极),从而完成OLED的制造。
OLED具有在50mA/cm2的电流密度下5.63V的驱动电压、2760cd/m2的亮度、5.52cd/A的发光效率和324小时的半衰期(hr@100mA/cm2)。
实施例2
除了用化合物17替代化合物6外,用与实施例1相同的方法制造OLED。
OLED具有在50mA/cm2的电流密度下5.67V的驱动电压、2745cd/m2的亮度、5.49cd/A的发光效率和293小时的半衰期(hr@100mA/cm2)。
实施例3
除了用化合物21替代化合物6外,用与实施例1相同的方法制造OLED。
OLED具有在50mA/cm2的电流密度下5.79V的驱动电压、2770cd/m2的亮度、5.54cd/A的发光效率和307小时的半衰期(hr@100mA/cm2)。
实施例4
除了用化合物26替代化合物6外,用与实施例1相同的方法制造OLED。
OLED具有在50mA/cm2的电流密度下5.58V的驱动电压、2560cd/m2的亮度、5.12cd/A的发光效率和297小时的半衰期(hr@100mA/cm2)。
实施例5
除了用化合物35替代化合物6外,用与实施例1相同的方法制造OLED。
OLED具有在50mA/cm2的电流密度下5.82V的驱动电压、2780cd/m2的亮度、5.56cd/A的发光效率和317小时的半衰期(hr@100mA/cm2)。
实施例6
除了用化合物41替代化合物6外,用与实施例1相同的方法制造OLED。
OLED具有在50mA/cm2的电流密度下5.56V的驱动电压、2805cd/m2的亮度、5.61cd/A的发光效率和268小时的半衰期(hr@100mA/cm2)。
实施例7
除了用化合物45替代化合物6外,用与实施例1相同的方法制造OLED。
OLED具有在50mA/cm2的电流密度下5.43V的驱动电压、2835cd/m2的亮度、5.67cd/A的发光效率和356小时的半衰期(hr@100mA/cm2)。
实施例8
除了用化合物48替代化合物6外,用与实施例1相同的方法制造OLED。
OLED具有在50mA/cm2的电流密度下5.62V的驱动电压、2670cd/m2的亮度、5.34cd/A的发光效率和322小时的半衰期(hr@100mA/cm2)。
实施例9
除了用化合物49替代化合物6外,用与实施例1相同的方法制造OLED。
OLED具有在50mA/cm2的电流密度下5.37V的驱动电压、2575cd/m2的亮度、5.15cd/A的发光效率和215小时的半衰期(hr@100mA/cm2)。
对比例1
除了用4,4’-双[N-(1-萘基)-N-苯基氨基]联苯(NPB)替代化合物6外,用与实施例1相同的方法制造OLED。
OLED具有在50mA/cm2的电流密度下7.35V的驱动电压、2065cd/m2的亮度、4.13cd/A的发光效率和145小时的半衰期(hr@100mA/cm2)。
对比例2
除了在HTL的形成中用化合物52(以下)替代化合物6外,用与实施例1相同的方法制造OLED。
OLED具有在50mA/cm2的电流密度下6.87V的驱动电压、2,340cd/m2的亮度、4.68cd/A的发光效率和220小时的半衰期(hr@100mA/cm2)。
对比例3
除了在HTL的形成中用化合物53(以下)替代化合物6外,用与实施例1相同的方法制造OLED。
OLED具有在50mA/cm2的电流密度下7.12V的驱动电压、2,105cd/m2的亮度、4.21cd/A的发光效率和132小时的半衰期(hr@100mA/cm2)。
实施例1至9和对比例1至3的OLED的特性和寿命示于以下表1中。
表1
从表1显示的结果可确认:与包括NPB的OLED相比,当通式1的化合物用作空穴传输材料时,包括通式1的化合物的OLED呈现良好的电流-电压-亮度(I-V-L)特性,即显著改善的驱动电压和高效率,尤其是,呈现显著改善的寿命。
如上所述,根据本发明的一个或多个实施方式,由通式1表示的新化合物具有良好的发光性质和电荷传输能力,因此可适于在全色的,例如红色、绿色、蓝色、白色等的荧光和磷光装置中用作空穴注入材料或空穴传输材料。因此,包括通式1的化合物的OLED可具有高效率、低电压、高亮度和长的寿命。
虽然参照了某些示例性实施方式对本发明进行了说明和描述,本领域普通技术人员应理解可在不违背由以下权利要求所限定的本发明的精神和范围的前提下对上述实施方式做出各种改变。
Claims (16)
1.一种由通式1表示的用于有机发光二极管的化合物:
通式1
其中:
R1和R2各自独立地为氢、氘、卤素、氰基、取代或未取代的C1至C20烷基或由通式2a至2c中的任一个表示的半族:
其中:
Y1、Y2和Y3各自独立地为由-N=或-C(R21)=表示的连接基团;
Q为由-C(R30)(R31)-、-N(R32)-、-S-或-O-表示的连接基团,
Z1、Z2、R21、R30、R31和R32各自独立地为氢原子、氘、取代或未取代的C1至C20烷基、取代或未取代的C6至C20芳基、取代或未取代的C3至C20杂芳基、未取代的C6至C20稠合多环基、被C6至C20芳基或C3至C20杂芳基取代的氨基、卤素、氰基、硝基、羟基或羧基;
p为1至7的整数,且*表示结合部位;R1和R2可选地结合形成环,
R3为氢、氘、卤素、氰基、或由通式3b或3c表示的半族:
其中:
Y1、Y2和Y3各自独立地为-N=或-C(R21)=表示的连接基团,
Z1、Z2和R21各自独立地为氢原子、氘、取代或未取代的C1至C20烷基、取代或未取代的C6至C20芳基、取代或未取代的C3至C20杂芳基、未取代的C6至C20稠合多环基、卤素、氰基、硝基、羟基或羧基;
p为1至7的整数;且*表示结合部位,
Ar1和Ar2各自独立地为由通式4a至4g中的任一个表示的半族:
其中:
Q1和Q2各自独立地为-C(R30)(R31)-、-N(R32)-、-S-或-O-表示的连接基团;
Z1、Z2和Z3各自独立地为氢原子、氘、取代或未取代的C1至C20烷基、取代或未取代的C6至C20芳基、取代或未取代的C3至C20杂芳基、未取代的C6至C20稠合多环基、卤素、氰基、硝基、羟基或羧基;
R30、R31和R32各自独立地为氢原子、氘、取代或未取代的C1至C20烷基、取代或未取代的C6至C20芳基、取代或未取代的C3至C20杂芳基、被C6至C20芳基或C3至C20杂芳基取代的氨基、未取代的C6至C20稠合多环基、卤素、氰基、硝基、羟基或羧基;
p为1至9的整数,
q为1或2,
r为1至4的整数,且
*表示结合部位,Ar1和Ar2可选地结合形成环,
其中术语“取代的”是指未取代的基团的至少一个氢原子被氘、卤素原子、羟基、硝基、氰基、氨基、脒基、肼基、腙基、羧基或其盐、磺酸基或其盐、磷酸基或其盐、C1至C10烷基、C1至C10烷氧基、C2至C10烯基、C2至C10炔基、C6至C16芳基或C4至C16杂芳基取代。
2.如权利要求1所述的化合物,其中R1和R2结合形成环。
3.如权利要求1所述的化合物,其中Ar1和Ar2结合形成环。
4.如权利要求1所述的化合物,其中所述通式1的化合物选自化合物1至5、7至9、11至17、21至37、39、47、49和51:
5.一种有机发光二极管,所述有机发光二极管包括:
第一电极,
第二电极,和
所述第一电极和所述第二电极之间的有机层,所述有机层包括根据权利要求1至4中任一项所述的化合物。
6.根据权利要求5所述的有机发光二极管,其中,所述有机层为发光层,且由所述通式1表示的化合物为荧光主体或磷光主体。
7.根据权利要求5所述的有机发光二极管,其中,所述有机层为发光层,且由所述通式1表示的化合物为荧光掺杂剂。
8.根据权利要求5所述的有机发光二极管,其中,所述有机层为空穴注入层、空穴传输层或具有空穴注入和空穴传输能力的功能层。
9.根据权利要求5所述的有机发光二极管,其中,所述有机层为空穴传输层。
10.根据权利要求5所述的有机发光二极管,其中,所述有机发光二极管包含发光层、空穴注入层、空穴传输层或具有空穴注入和空穴传输能力的功能层,其中,所述发光层、所述空穴注入层、所述空穴传输层、或所述具有空穴注入和空穴传输能力的功能层包含根据权利要求1至4中任一项所述的化合物,并且所述发光层包含蒽类化合物、芳胺类化合物或苯乙烯类化合物。
11.根据权利要求5所述的有机发光二极管,其中,所述有机发光二极管包含发光层、空穴注入层、空穴传输层或具有空穴注入和空穴传输能力的功能层,其中,所述空穴注入层、所述空穴传输层、或所述具有空穴注入和空穴传输能力的功能层包含根据权利要求1至4中任一项所述的化合物,并且所述发光层的红色层、绿色层、蓝色层或白色层中的任一个包括磷光化合物。
12.根据权利要求11所述的有机发光二极管,其中,所述空穴注入层、所述空穴传输层或具有空穴注入和空穴传输能力的所述功能层包含电荷生成材料。
13.根据权利要求12所述的有机发光二极管,其中,所述电荷生成材料为p型掺杂剂,其中所述p型掺杂剂为醌衍生物、金属氧化物或含氰基的化合物。
14.根据权利要求5所述的有机发光二极管,其中,所述有机层包括电子传输层,其中,所述电子传输层包含电子传输有机化合物和金属络合物。
15.根据权利要求5所述的有机发光二极管,其中,所述有机层用根据权利要求1至4中任一项所述的化合物用湿法工艺形成。
16.一种平板显示装置,所述平板显示装置包括权利要求5至15中任一项所述的有机发光二极管,其中,所述有机发光二极管的所述第一电极电连接到薄膜晶体管的源极或漏极。
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CN101289403A (zh) * | 2006-06-15 | 2008-10-22 | 三星Sdi株式会社 | 基于环戊并菲的化合物和采用该化合物的有机电致发光器件 |
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KR101990553B1 (ko) | 2019-06-19 |
US20130270524A1 (en) | 2013-10-17 |
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