CN1033543C - 具有多层超导结构的电路及其制造方法 - Google Patents
具有多层超导结构的电路及其制造方法 Download PDFInfo
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- CN1033543C CN1033543C CN88102047A CN88102047A CN1033543C CN 1033543 C CN1033543 C CN 1033543C CN 88102047 A CN88102047 A CN 88102047A CN 88102047 A CN88102047 A CN 88102047A CN 1033543 C CN1033543 C CN 1033543C
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- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
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Abstract
一种在半导体衬底上具备超导膜的电路,与超导膜相接触的表面由耐热非氧化绝缘膜组成,以使超导膜的性能不下降。
Description
本发明涉及具有多层超导结构的电路及其制造方法。
通常,人们采用Nb-Ge金属材料(如:Nb3Ge)和类似的材料制成的金属条作为超导材料。就是采用这种通常类型的金属丝制成了超导磁体。
另外,近年来人们认识了具有超导特性的陶瓷材料,然而也仅是晶块形式而未发展成薄膜形式的超导材料。
应用图形光刻法制造薄膜的方法和采用薄膜作为半导体器件连接线的一部分仍未被人们完全了解。
另一方面,人们已经了解到在同一衬底上制备多个包括半导体集成电路在内的各种元件的半导体器件。
近年来,发展越来越精细的高速度集成电路已成为一种需要。随着精细度的提高,由于在半导体器件内产生的热造成的可靠性下降和在发热部位活动速度的减小已成为问题。为此,迫切需要得到一种对超导陶瓷的特性有更小影响的改型结构。
因此,本发明的一个目的是提供一种具有多层超导结构的改进型电路。
本发明的另一个目的是提供一种具有多层超导结构并具有最佳性能的改进型电路。
按照本发明,将碳膜同薄膜形、块状、带状、条状、线状或类似形状的超导陶瓷相连接而形成。借助于由直流或交流电源供能的等离子反应,在例如0.01至0.5乇的条件下分解含碳的化合物气体,在衬底上淀积一层碳膜。采用0.1MHz至50MHz(例如13.56MHz)的高频功率能够打开C-C键和C=C键。另外,采用1MHz或更高的高频功率能打开C-H键。在这个工序中,碳膜成为具有混合轨道PS3的富C-C键或-C-C-键,因而形成具有能带不低于1.0eV(最好是1.5~5.5eV)的类金刚石碳结构,而不是无光泽的、不能用作可靠的绝缘材料的石墨。
在典型的情况下,本发明所应用的超导陶瓷按照化学式(A1-xBx)yCuzOw来制备。其中,A是周期表IIIa、IIIb、Va和Vb族中的一种或多种元素,B是周期表IIa族中的一种或多种元素,例如,包括铍和镁的碱土金属,X=0.3~1;Y=2.0~4.0;Z=1.5~3.5;W=4.0~10.0。一般公式的例子是:BiSrCaCu2-3O4-10,Y0.5Bi0.5Sr1Ca1Cu2-3O4-10,YBa2Cu3O6-8,Bi1Sr1Mg0.5Ca0.5Cu2-3O4-10,Bi0.5Al0.5SrCaCu2-3O4-10。这些材料能够借助于电子束蒸发、溅射、光增强CVD、光增强PVD等技术在一个表面上形成。
图1(A)至1(D)为本发明的第一实施例中制造工序的剖面图。
图2是本发明的第二实施例的剖面图。
图3是按照本发明制造器件的剖面图。
图4(A)和4(B)是本发明的第三实施例中制造工序的剖面图。
图5是本发明的第四实施例的剖面图
图6是本发明的第五实施例的剖面图。
图7是本发明的第六实施例的剖面图。
图8和9示出超导陶瓷的电阻率与温度的关系图。
参照附图1(A)~1(D),其中示出按照本发明的半导体器件的第一实施例的生产步骤。
半导体器件包括一个半导体衬底,该衬底具有合乎要求的热阻,例如:一个单晶硅半导体衬底和半导体衬底中的多个元件,例如绝缘栅场效应晶体管。然后,在衬底上或在绝缘膜的上表面或在导体上形成具有零电阻的超导材料。对这种超导材料进行选择刻蚀、光刻形成图形。另外,在这道工序之前或之后,将陶瓷材料置于500~1000℃的温度下,特别在氧化气氛中进行热退火,改善陶瓷材料的晶体结构,以使在极低温度下显示超导特性。通过一次或多次重复该步骤,形成一层或多层在低于特定临界温度的低温下具有零电阻的连线材料。
现在参照图1(A),在硅半导体衬底1上形成绝缘膜2、用光刻法在绝缘膜2上形成窗口8。
在半导体衬底中有预先制备的绝缘栅场效应管(IGFET),有源元件如双极晶体管或电阻和无源元件如电容。有源元件和无源元件的电极的接触部分相对于窗口8安置。
绝缘膜2由多层材料组成:下层为氧化硅膜,上层为氮化硅膜,这个氮化硅膜为绝缘层提供了一层耐热非氧化的上表面。重要的是绝缘层既不与激发时覆盖在上面的超导材料相互作用,也不会变成混合物。除了氮化硅之外,其它的氮化物,例如AlN和TiN或SiC和TiC之类的碳化物也适合作耐热非氧化材料。在绝缘层上制备一些接触区域,在这些区域露出下层衬底。
在图1(B)中,一种具有超导特性的材料以薄膜形式在衬底和这些元件上表面形成。在本实施例中,薄膜是以溅射法形成的。然而,也可以采用丝网印刷方法、真空蒸发方法或化学气相淀积法。不过,这里采用的溅射法适于批量生产,并且容易制造耐热陶瓷薄膜。
本发明所采用的典型的超导材料是周期表IIIa和IIa族元素和铜形成的氧化物陶瓷。
在溅射装置中,靶是由化合物材料(Y1-xBax)yCUzOw构成的,其中0<X<1,Y=2~4,Z=1.5~3.5,W=4~10,例如:(YBa2)Cu3O6-8。在本实施例中,溅射是在氩气气氛中,衬底温度为450℃,在频率为50Hz的输入电源输出功率为100W下进行的。在这种情况下,陶瓷材料薄膜的厚度为0.2~2微米,如厚度为1微米。然后,将陶瓷材料置于700℃的温度下,在氧气气氛中退火10个小时。此后,在临界温度起始点Tc=95K时,有可能产生超导薄膜。电阻率在95K之下急剧下降。在实验上,在79K,其电阻率实际上为零。
此后,为制造电极和连接这些元件的电极和输入输出的引出线,在结构的上表面覆盖一层制造图形所需要的光刻胶。应用湿法腐蚀(例如,硫酸或硝酸)或应用CCl4或CBr4的干法刻蚀进行选择去除,以得到图1(C)所示的半导体器件。按此法,应用光刻技术,在薄膜3上形成预定的图形。可以在刚刚形成超导膜后,马上进行刻制图形,然后进行热退火,以便仅将有图形的连接部分有选择地晶化。
在这种情况下,既使在最初的状态下,晶粒尺寸也很小,所以有可能得到小图形的连线
图1(D)示出上述工序完成后形成的所需要的多层布线。特别是,对连接半导体外引线来说,金属比陶瓷超导体具有更好的连接特性。为此,在层之间用氧化硅和聚酰亚树酯(PIQ)形成绝缘膜6,用铝形成图形7和7′。
具体地说,本发明的一层或多层元件的连线是由超导陶瓷形成的。另外,为引到外部的电极制备了金属焊点,以利于材料的焊接特性。当然,如果能够改善材料同外界的焊接特性,焊点部位也能用超导材料制作。
图2示出本发明的另一个实施例,具体地说,仅是一个C/MOS(互补IGFET)的剖面图。
上述剖面具有一个经过充分退火的硅半导体衬底1,在衬底中形成P阱15,在其上,再形成一层氧化硅。IGFET20作为一个P沟道管具有一个栅电极12、源极13和漏极14。另一个IGFET为N沟道管,它具有栅电极12′、源极13′和漏极14′。栅极12和12′为多晶硅,连接栅极12和12′的连线以及其它连线5和7由超导材料5形成。正如上例所述,超导材料是由CVD方法制成的。在损伤没有影响下层衬底的情况下,栅极可以由超导材料形成。与上例类似,在超导陶瓷薄膜之下覆盖着栅极的绝缘膜6是由例如氮化硅或碳化硅这样的耐热非氧化材料制成的。与超导薄膜层5上表面相接触的另一绝缘层6′同样由耐热非氧化材料制成,它与另一超导膜7相接触。
当将这种半导体冷却到液氮温度下时,其载流子迁移率可能增加3或4倍。另外,可以将引出线和电极的电阻减小到零。因此,极高速动作成为可能。按本发明,借助于氮化物,也可以制备厚度为30微米或更薄(例如0.1~1微米)的高温超导陶瓷薄膜。
在本发明中,半导体不必须是硅,可以是半导体化合物GaAs和利用异质外延在硅半导体上生长的作为半导体膜的类似材料。然而,在此种情况下,需要采用低温退火,以使半导体不受退火的热度。
下面,给出一些用于与超导陶瓷相连接的碳膜的实例。首先,介绍在衬底(例如:玻璃、半导体或陶瓷衬底)上淀积碳膜的工艺步骤如图3所示。可以为衬底制备一个超导图形,以及制在半导体内的电路等。在本说明书中,虽然淀积的碳根据情况可能为颗粒状或其它形式,而不是薄膜形式,但为方便以后的讨论,将碳的淀积物都简单称为碳膜。
图3示出了本发明中用于淀积和刻蚀的等离子增强化学反应装置的剖面图。该装置包括:反应室104,装卸室105,供气系统110,与匹配变压器116相连的高频功率源115,通过涡轮分子泵122和阀门21与反应室104相连接的旋转泵123,以及与装卸室105相连接的旋转泵123′。反应室104备有一个加热器109,在工艺过程中,将衬底维持在一个适合的温度。
将待覆盖碳膜的衬底110从装载室105通过阀门106送至反应室104,每一个反应室都预先抽真空到预定的负压条件。对反应室104被抽空后,如果需要,可以将阀门关闭。将碳化物气体(例如CH4或C2H2)和氢气分别从输入口112和111通过气流表129、阀门128和微波激发装置125送入反应室104。输出为一对出口125和125′,在部件125和125′之间安置一个衬底夹持器102,它还起着第一电极的作用。碳化物气体和氢气的流速相等,并控制使得在淀积过程中反应室内的反应气压维持在0.001~10乇,最好是0.01~1乇,例如0.1乇。衬底温度为-100℃至+150℃。在这种情况下,从功率源115将50W~1KW的高频功率加至第一电极102和对面的第二电极103之间。由直流电流117加-200V至+600V的偏置电压。反应空间所施加的功率基本上相当于在-400V至+400V之间的交变电压,这是因为在偏置电压为零的情况下,在电极102和接地的第二电极103之间出现一个自偏置电压-200V。当反应气体(例如CH2+H2)在进入反应空间之前被激发装置125所发射的微波(2.45GHz)产生的微波所激励而获能时,淀积速度增加四倍。在刻蚀的情况下,由微波激发进入反应室104之前的腐蚀性气体,其刻蚀速度可提高三倍。
借助于相当于0.03~3W/cm2的电功率,使反应气体处于等离子状态140,并且以100~1000/分的生长速率在衬底101之上淀积一层碳膜。碳膜的维氏硬度不低于2000公斤/毫米2,热导率不低于2.5瓦/厘米·度,最好是4.0~6.0瓦/厘米·度。碳膜呈内含大量C-C键的微晶或非晶结构。我们称这种非常硬的非晶碳为“类金刚石结构碳“或简称为DLC。当然,通过调节淀积条件,可以形成金刚石。
根据实验,当衬底温度为-50℃至150℃,以CH4作为碳化物气体,直流电压为+100V到+300V时,但没有微波激发的情况下,其生长速率为100~200/分。当采用CH4或C2H4,并有微波激发时,其生长速率为500~1000/分。只有热导率不低于2.5瓦/厘米·度的样品才是合格的。反应气体中用过的不需要的气体可由涡轮分子泵122和旋转泵123排出。
下面,将要阐述为使按上述淀积好的碳膜形成图形的刻蚀工艺步骤,如图4(a)所示,淀积在衬底131上的碳膜134上形成掩模135,掩模可由氧化硅、光刻胶和氮化硅一类绝缘材料制成。应用与上述淀积工序相同的方法,将衬底放在反应室内。然后,从输入口110加入氧气,在0.01~1乇(例如:0.1乇)的情况下加300W的高频功率。根据实验,所测量的刻蚀速度为350/分当压力为0.5乇时,刻蚀速率降为270/分。结果,未被掩膜135覆盖的那部分碳膜被刻蚀掉。除去掩模135后,获得如图4(B)所示的碳膜形状。在这个工艺步骤中,可以用大气、NO4、NO2、N2O、氧和氢混合气以及气体的氧的化合物(例如:水)来取代氧气。也可用氟化物气体作为刻蚀气体,如:CF4和NF3。
这个化学反应装置也可以用来淀积氮化硅膜,并用同样的方法刻蚀成图形。淀积的反应气体包括例如氨和硅烷。而刻蚀的气体为NF3、SF6或CF3。
图5是本发明的第三个实施例的剖面图。图中示出在衬底131上所形成的半导体集成电路上淀积碳膜。半导体器件包括一层氧化硅绝缘膜137、一层金属图形132、一层超导陶瓷膜133和按照本发明淀积的厚度为0.1~2微米(例如:0.5微米)的碳膜134。在此种情况下,焊接点和外电路相连接的连线是由铝、金属硅化物或掺杂的硅制成的。为此目的的导体是由一些在氧化中不会转变成绝缘体的材料(例如:铜、银、金和铂)中选出的。焊接点和电连线可以由超导膜133的一部分形成。不毁坏超导膜133能够形成开孔136来提供焊接点。在这种结构中,借助于碳膜的高热导率,可以避免在工作中由于例如功率晶体管产生的热使超导薄膜转变成正常电导率材料的现象。
图6示出第四个实施例。在图中超导陶瓷器件包括一个由玻璃或抛光陶瓷制成的衬底131,一个由超导氧化陶瓷132通过刻蚀形成图形的电连线和一层0.2-2微米的碳膜。通过在上表面制成50~500微米的金属掩膜(例如:不锈钢模)141,并且用氟化物气体作为刻蚀剂来刻蚀,以形成碳膜134上的开孔136,在开孔136上露出碳膜。在碳膜的上表面,用上述同样的方法形成进一步的电路图形。
图7示出第5个实施例,这个实施例与图5所示的器件具有相似的结构。在衬底131上形成具有窗口138和138′的绝缘膜图形137。在绝缘膜137之上形成超导膜132并形成图形。在超导膜132和绝缘膜137之上淀积一层碳膜134,并用与图3所述工序相同的方法刻蚀出窗口138′和138″,从而形成图形。在这些已形成的膜层之上,用溅射的方法淀积另一层超导陶瓷膜132′,这层超导陶瓷膜通过窗口138′与衬底131连接,并通过窗口138″与下层超导膜132相连接。最好,覆盖另一层碳膜139(或其它钝化膜)、并形成图形,以产生超导连线132′的焊接点136,可以用碳膜覆盖住超导膜的上下表面,以防止与其它绝缘膜相接触。
为本发明的器件所采用的碳包含不高于25原子%的氢和/或卤素,不高于5原子%的三价或五价杂质,或N/C≤0.05的氮。
在上述说明中,虽然在半导体衬底中具有有源器件,也可以采用如50~5000厚的氮化硅作为非氧化膜覆盖在陶瓷衬底上表面上,也可以采用例如YSZ(钇稳定锆土)衬底,它具有与陶瓷基本相同的热膨胀系数。
本发明所采用的超导陶瓷可以按照化学式(A1-xBx)yCuzOw来制备,其中,A为周期表IIa族中的一种或多种元素,例如稀土元素,B为周期表IIa族中的一种或多种元素,例如,包括铍和镁的碱土金属,X=0~1,Y=2.0~4.0,最好为2.5~3.5,Z=1.0~4.0,最好为1.5~3.5,W=4.0~10.0,最好为6.0~8.0。YBa2Cu3O6-8为一个实例。本发明所采用的超导陶瓷也可以按照化学式(A1-xBx)yCuzOw来制备。其中,A为周期表Vb族中的一种或多种元素,如铋、锑、砷,B为周期表IIa族中的一种或多种元素,如包括铍和镁的碱土金属,X=0.3~1,Y=2.0~4.0,最好为2.5~3.5,Z=1.0~4.0,最好为1.5~3.5,W=4.0~10.0,最好为6.0~8.0。BiSrCaCuCu2Ox和Bi4Sr3Ca3Cu4Ox为两个实例。测量由化学式Bi4SryCa3Cu4Ox(y约为1.5)所确定的样品的Tc起始点和Tco为40~60K,这并不太高。相对高的转变温度可由化学式Bi4Sr4Ca2Cu4Ox和Bi2Sr3Ca2Ca2Ox所确定的样品得到。图7和图8示出两个样品的电阻率与温度的相对关系。所确定的氧比例数为6~10,例如8.1左右。
虽然这里只说明了几个实施例,本发明只受附属的权利要求限定,而不受上述特殊例内容的限制。
Claims (25)
1.一种在一涂覆有一层由氧化物制成的绝缘层的衬底上所形成的超导图形,所说图形包括氧化超导陶瓷材料,其特征在于,一层非气化绝缘薄膜被插入在所说绝缘层和所说超导图形之间,以防止所述超导图形直接接触所述绝缘层。
2.根据权利要求1所述的超导图形,其特征在于非氧化绝缘薄膜由耐热绝缘材料制成。
3.根据权利要求2所述的超导图形,其特征在于所述材料为氮化物。
4.根据权利要求2所述的超导图形,其特征在于所述材料是氮化硅、氮化铝或氮化钛。
5.根据权利要求2所述的超导图形,其特征在于所述材料为碳化物。
6.根据权利要求2所述的超导图形,其特征在于所述材料为碳化或碳化钛。
7.根据权利要求1所述的超导图形,其特征在于所述衬底为半导体衬底,在衬底中至少形成一个半导体器件。
8.根据权利要求1所述的超导图形,其特征在于所述图形为超导连线。
9.根据权利要求1所述的超导图形,其特征在于所述非氧化绝缘薄膜包括碳。
10.根据权利要求9所述的超导图形,其特征在于所述碳为类金刚石结构碳。
11.根据权利要求9所述的超导图形,其特征在于所述碳为金刚石。
12.根据权利要求9所述的超导图形,其特征在于所述的碳含有氢。
13.根据权利要求9所述的超导图形,其特征在于所述的碳含有不高于25原子%的卤素。
14.根据权利要求9所述的超导图形,其特征在于所述的碳含有有高于5原子%的氮。
15.根据权利要求9所述的超导图形,其特征在于所述的碳含有不高于5原子%的三价或五价杂质。
16.根据权利要求1所述的超导图形,其特征在于所述的图形由按照化学式(A1-xBx)yCuzOw所确定的超导陶瓷制成的,其中,A为从周期表III a族中选出的一种或多种元素,B为从周期表II a族中选出的一种或多种元素,X=0-1;Y=2.0-4.0;Z=1.0-4.0;W=4.0-10.0。
17.根据权利要求16所述的超导图形,其特征在于所述的陶瓷定义为YBa2Cu3O6-8。
18.根据权利要求1所述的超导图形,其特征在于所述的图形由按照化学式(A1-xBx)yCuzOw所确定的超导陶瓷制成,其中,A为从周期表VA族中选出的一种或多种元素,例如Bi、Sb和AS,B为从周期表IIa族中选出的一种或多种元素,X=0.3-1;Y=2.0-4;Z=1.0-4.0;W=4.0-10.0。
19.根据权利要求16所述的超导图形,其特征在于所述的陶瓷定义为BiSrCaCuCu2Ox,Bi4Sr3Ca3Cu4Ox,Bi4SryCa3Cu4Oz(y约为1.5)Bi4Sr4Ca2Cu4Ox或Bi2Sr3Ca2Cu2Ox。
20.根据权利要求1所述的超导图形,其特征在于所述的超导图形直接在衬底上形成。
21.根据权利要求20所述的超导图形,其特征在于所述的碳膜覆盖住所述的超导图形。
22.一种在一涂覆有一层由氧化物制成的绝缘层的衬底上形成超导图形的方法,所说图形包括一种超导陶瓷原材料,其特征在于在形成所说图形之前,用一层非氧化绝缘薄膜涂复所说氧化绝缘薄膜,以在所说氧化绝缘薄膜上形成所说超导图形时防止所说超导图形与所说绝缘层直接接触。
23.根据权利要求22所述的方法,其特征在于所述的非氧化绝缘薄膜包括碳。
24.根据权利要求22所述的方法,其特征在于所说非氧化绝缘薄膜是用碳酸盐或氟化碳,采用等离子增强CVD方法淀积的。
25.根据权利要求22所述的方法,其特征在于还利用等离子化学气相反应,使所述非氧化绝缘薄膜形成图形的工艺步骤。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62081487A JPH0634412B2 (ja) | 1987-04-01 | 1987-04-01 | 超電導体装置 |
JP81487/87 | 1987-04-01 | ||
JP63022384A JPH01197308A (ja) | 1988-02-01 | 1988-02-01 | 炭素膜で保護された酸化物超伝導体およびその作製方法 |
JP22384/88 | 1988-02-01 |
Publications (2)
Publication Number | Publication Date |
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CN88102047A CN88102047A (zh) | 1988-10-19 |
CN1033543C true CN1033543C (zh) | 1996-12-11 |
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Application Number | Title | Priority Date | Filing Date |
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CN88102047A Expired - Lifetime CN1033543C (zh) | 1987-04-01 | 1988-03-31 | 具有多层超导结构的电路及其制造方法 |
Country Status (5)
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US (1) | US4960751A (zh) |
EP (1) | EP0285445B1 (zh) |
KR (1) | KR960006207B1 (zh) |
CN (1) | CN1033543C (zh) |
DE (1) | DE3889762T2 (zh) |
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KR950010206B1 (ko) * | 1987-03-09 | 1995-09-11 | 가부시끼가이샤 한도다이 에네르기 겐꾸쇼 | 전자 장치 및 그 제조 방법 |
US5274268A (en) * | 1987-04-01 | 1993-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electric circuit having superconducting layered structure |
US5248658A (en) * | 1987-04-07 | 1993-09-28 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a superconducting oxide pattern by laser sublimation |
AU599223B2 (en) * | 1987-04-15 | 1990-07-12 | Semiconductor Energy Laboratory Co. Ltd. | Superconducting ceramic pattern and its manufacturing method |
US5401716A (en) * | 1987-04-15 | 1995-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing superconducting patterns |
CA1329952C (en) | 1987-04-27 | 1994-05-31 | Yoshihiko Imanaka | Multi-layer superconducting circuit substrate and process for manufacturing same |
US5232903A (en) * | 1987-05-06 | 1993-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Oxide superconducting device having uniform oxygen concentration |
CA1326976C (en) * | 1987-05-26 | 1994-02-15 | Satoshi Takano | Superconducting member |
NL8701718A (nl) * | 1987-07-21 | 1989-02-16 | Philips Nv | Werkwijze voor het aanbrengen van dunne lagen van oxidisch supergeleidend materiaal. |
DE3889263T2 (de) * | 1987-08-24 | 1994-08-11 | Semiconductor Energy Lab | Elektronische Anordnungen unter Verwendung von supraleitenden Materialien. |
US5225394A (en) * | 1987-08-31 | 1993-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing high Tc superconducting circuits |
GB2211662B (en) * | 1988-01-16 | 1991-01-16 | Int Computers Ltd | Multichip carriers |
US5171732A (en) * | 1988-12-23 | 1992-12-15 | Troy Investments, Inc. | Method of making a josephson junction |
US5084437A (en) * | 1990-02-28 | 1992-01-28 | Westinghouse Electric Corp. | Method for making high-current, ohmic contacts between semiconductors and oxide superconductors |
JPH05894A (ja) * | 1990-06-28 | 1993-01-08 | Sumitomo Electric Ind Ltd | 複合酸化物超電導薄膜 |
US5212626A (en) * | 1990-11-09 | 1993-05-18 | International Business Machines Corporation | Electronic packaging and cooling system using superconductors for power distribution |
EP0502787B1 (en) * | 1991-03-04 | 1996-08-14 | Sumitomo Electric Industries, Ltd. | A thin film of oxide superconductor possessing locally different crystal orientations and a processes for preparing the same |
WO1992020092A1 (en) * | 1991-05-08 | 1992-11-12 | Superconductor Technologies, Inc. | Passivation coating for superconducting thin film device |
EP0570720A1 (en) * | 1992-05-20 | 1993-11-24 | Sumitomo Electric Industries, Ltd. | Stabilized carbon cluster conducting or superconducting material, its production, and use thereof |
US5455432A (en) * | 1994-10-11 | 1995-10-03 | Kobe Steel Usa | Diamond semiconductor device with carbide interlayer |
US5818071A (en) * | 1995-02-02 | 1998-10-06 | Dow Corning Corporation | Silicon carbide metal diffusion barrier layer |
JP4355039B2 (ja) * | 1998-05-07 | 2009-10-28 | 東京エレクトロン株式会社 | 半導体装置及び半導体装置の製造方法 |
FI19992757A (fi) * | 1999-12-22 | 2001-06-23 | Nanoway Oy | Menetelmä tunneliliitoskomponentin stabiloimiseksi ja stabiloitu tunneliliitoskomponentti |
US6518648B1 (en) * | 2000-09-27 | 2003-02-11 | Advanced Micro Devices, Inc. | Superconductor barrier layer for integrated circuit interconnects |
US20060060977A1 (en) * | 2004-09-22 | 2006-03-23 | Kabushiki Kaisha Toshiba | Semiconductor device |
JP2011527834A (ja) * | 2008-07-08 | 2011-11-04 | サンディスク スリーディー,エルエルシー | 炭素系抵抗率スイッチング材料およびその形成方法 |
WO2010078467A1 (en) * | 2008-12-31 | 2010-07-08 | Sandisk 3D, Llc | Modulation of resistivity in carbon-based read-writeable materials |
US9653398B1 (en) * | 2015-12-08 | 2017-05-16 | Northrop Grumman Systems Corporation | Non-oxide based dielectrics for superconductor devices |
US10608159B2 (en) | 2016-11-15 | 2020-03-31 | Northrop Grumman Systems Corporation | Method of making a superconductor device |
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FR2273385B1 (zh) * | 1974-05-29 | 1976-10-15 | Comp Generale Electricite | |
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JPH0648733B2 (ja) * | 1984-01-25 | 1994-06-22 | 株式会社日立製作所 | 極低温用半導体装置 |
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CA1329952C (en) * | 1987-04-27 | 1994-05-31 | Yoshihiko Imanaka | Multi-layer superconducting circuit substrate and process for manufacturing same |
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-
1988
- 1988-03-29 US US07/174,790 patent/US4960751A/en not_active Expired - Fee Related
- 1988-03-31 DE DE3889762T patent/DE3889762T2/de not_active Expired - Fee Related
- 1988-03-31 CN CN88102047A patent/CN1033543C/zh not_active Expired - Lifetime
- 1988-03-31 EP EP88302957A patent/EP0285445B1/en not_active Expired - Lifetime
- 1988-03-31 KR KR1019880003574A patent/KR960006207B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
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EP0285445A2 (en) | 1988-10-05 |
EP0285445B1 (en) | 1994-06-01 |
US4960751A (en) | 1990-10-02 |
KR960006207B1 (ko) | 1996-05-09 |
CN88102047A (zh) | 1988-10-19 |
DE3889762D1 (de) | 1994-07-07 |
EP0285445A3 (en) | 1989-09-06 |
KR880013427A (ko) | 1988-11-30 |
DE3889762T2 (de) | 1994-09-08 |
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