CN103348469A - 具有减小的开关节点振铃的三维电源模块 - Google Patents

具有减小的开关节点振铃的三维电源模块 Download PDF

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Publication number
CN103348469A
CN103348469A CN2012800078397A CN201280007839A CN103348469A CN 103348469 A CN103348469 A CN 103348469A CN 2012800078397 A CN2012800078397 A CN 2012800078397A CN 201280007839 A CN201280007839 A CN 201280007839A CN 103348469 A CN103348469 A CN 103348469A
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China
Prior art keywords
terminal
power module
intermediate plate
tube core
fet
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CN2012800078397A
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Chinese (zh)
Inventor
J·A·赫尔嵩末
O·J·洛佩斯
J·A·浓趣勒
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Texas Instruments Inc
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Texas Instruments Inc
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Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Priority to CN201810832541.9A priority Critical patent/CN108987365A/zh
Publication of CN103348469A publication Critical patent/CN103348469A/zh
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    • H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • H02M3/1588—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load comprising at least one synchronous rectifier element
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Dc-Dc Converters (AREA)
CN2012800078397A 2011-02-07 2012-02-07 具有减小的开关节点振铃的三维电源模块 Pending CN103348469A (zh)

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US13/021,969 US20120200281A1 (en) 2011-02-07 2011-02-07 Three-Dimensional Power Supply Module Having Reduced Switch Node Ringing
US13/021,969 2011-02-07
PCT/US2012/024171 WO2012109265A2 (en) 2011-02-07 2012-02-07 Three-dimensional power supply module having reduced switch node ringing

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110612604A (zh) * 2017-05-19 2019-12-24 新电元工业株式会社 电子模块

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI453831B (zh) 2010-09-09 2014-09-21 台灣捷康綜合有限公司 半導體封裝結構及其製造方法
US8981748B2 (en) * 2011-08-08 2015-03-17 Semiconductor Components Industries, Llc Method of forming a semiconductor power switching device, structure therefor, and power converter
US9171784B2 (en) * 2012-03-28 2015-10-27 International Rectifier Corporation Dual power converter package using external driver IC
US9589872B2 (en) * 2012-03-28 2017-03-07 Infineon Technologies Americas Corp. Integrated dual power converter package having internal driver IC
US20140063744A1 (en) * 2012-09-05 2014-03-06 Texas Instruments Incorporated Vertically Stacked Power FETS and Synchronous Buck Converter Having Low On-Resistance
JP5966921B2 (ja) * 2012-12-28 2016-08-10 トヨタ自動車株式会社 半導体モジュールの製造方法
US9966330B2 (en) 2013-03-14 2018-05-08 Vishay-Siliconix Stack die package
US9589929B2 (en) * 2013-03-14 2017-03-07 Vishay-Siliconix Method for fabricating stack die package
US9214415B2 (en) * 2013-04-11 2015-12-15 Texas Instruments Incorporated Integrating multi-output power converters having vertically stacked semiconductor chips
US9171828B2 (en) 2014-02-05 2015-10-27 Texas Instruments Incorporated DC-DC converter having terminals of semiconductor chips directly attachable to circuit board
US9136256B2 (en) * 2014-02-20 2015-09-15 Texas Instruments Incorporated Converter having partially thinned leadframe with stacked chips and interposer, free of wires and clips
US9355942B2 (en) * 2014-05-15 2016-05-31 Texas Instruments Incorporated Gang clips having distributed-function tie bars
US9515014B2 (en) * 2014-10-08 2016-12-06 Infineon Technologies Americas Corp. Power converter package with integrated output inductor
US10103140B2 (en) * 2016-10-14 2018-10-16 Alpha And Omega Semiconductor Incorporated Switch circuit with controllable phase node ringing
CN109287129B (zh) * 2017-05-19 2022-04-08 新电元工业株式会社 电子模块
JP6509429B2 (ja) 2017-05-19 2019-05-08 新電元工業株式会社 電子モジュール
US11075154B2 (en) * 2017-10-26 2021-07-27 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
DE102018207308B4 (de) * 2018-05-09 2020-07-02 Infineon Technologies Ag Halbleiterbauteil mit integriertem shunt-widerstand und verfahren zu dessen herstellung
US20200194347A1 (en) * 2018-12-18 2020-06-18 Alpha And Omega Semiconductor (Cayman) Ltd. Semiconductor package and method of making the same
US11658410B2 (en) 2019-03-12 2023-05-23 Epirus, Inc. Apparatus and method for synchronizing power circuits with coherent RF signals to form a steered composite RF signal
US11211703B2 (en) 2019-03-12 2021-12-28 Epirus, Inc. Systems and methods for dynamic biasing of microwave amplifier
US11616295B2 (en) 2019-03-12 2023-03-28 Epirus, Inc. Systems and methods for adaptive generation of high power electromagnetic radiation and their applications
US12003223B2 (en) 2020-06-22 2024-06-04 Epirus, Inc. Systems and methods for modular power amplifiers
US12381523B2 (en) 2020-06-22 2025-08-05 Epirus, Inc. Systems and methods for radio frequency power systems
US12068618B2 (en) 2021-07-01 2024-08-20 Epirus, Inc. Systems and methods for compact directed energy systems
US11469722B2 (en) 2020-06-22 2022-10-11 Epirus, Inc. Systems and methods for modular power amplifiers
US20220020671A1 (en) * 2020-07-20 2022-01-20 Electronics And Telecommunications Research Institute Flip-stack type semiconductor package and method of manufacturing the same
US12273075B2 (en) 2021-07-01 2025-04-08 Epirus, Inc. Systems and methods for power distribution for amplifier arrays
CN115188756B (zh) * 2022-06-24 2025-10-24 艾科微电子(深圳)有限公司 芯片堆叠结构

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050218489A1 (en) * 2004-03-31 2005-10-06 Renesas Technology Corp. Semiconductor device
US20100090668A1 (en) * 2008-10-13 2010-04-15 Girdhar Dev A Stacked Field Effect Transistor Configurations
US20100171543A1 (en) * 2009-01-08 2010-07-08 Ciclon Semiconductor Device Corp. Packaged power switching device

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6421262B1 (en) * 2000-02-08 2002-07-16 Vlt Corporation Active rectifier
JP2005217072A (ja) * 2004-01-28 2005-08-11 Renesas Technology Corp 半導体装置
CN101819955B (zh) * 2004-12-20 2011-09-28 半导体元件工业有限责任公司 具有增强散热性的半导体封装结构
US7598603B2 (en) * 2006-03-15 2009-10-06 Infineon Technologies Ag Electronic component having a power switch with an anode thereof mounted on a die attach region of a heat sink
DE102006021959B4 (de) * 2006-05-10 2011-12-29 Infineon Technologies Ag Leistungshalbleiterbauteil und Verfahren zu dessen Herstellung
US7569920B2 (en) * 2006-05-10 2009-08-04 Infineon Technologies Ag Electronic component having at least one vertical semiconductor power transistor
DE102006034679A1 (de) * 2006-07-24 2008-01-31 Infineon Technologies Ag Halbleitermodul mit Leistungshalbleiterchip und passiven Bauelement sowie Verfahren zur Herstellung desselben
US7485954B2 (en) * 2006-09-07 2009-02-03 Alpha And Omega Semiconductor Limited Stacked dual MOSFET package
DE102007009521B4 (de) * 2007-02-27 2011-12-15 Infineon Technologies Ag Bauteil und Verfahren zu dessen Herstellung
US7683477B2 (en) * 2007-06-26 2010-03-23 Infineon Technologies Ag Semiconductor device including semiconductor chips having contact elements
US7750445B2 (en) * 2007-09-18 2010-07-06 Fairchild Semiconductor Corporation Stacked synchronous buck converter
US8035221B2 (en) * 2007-11-08 2011-10-11 Intersil Americas, Inc. Clip mount for integrated circuit leadframes
US7696612B2 (en) * 2008-01-28 2010-04-13 Fairchild Semiconductor Corporation Multiphase synchronous buck converter
US8115285B2 (en) * 2008-03-14 2012-02-14 Advanced Semiconductor Engineering, Inc. Advanced quad flat no lead chip package having a protective layer to enhance surface mounting and manufacturing methods thereof
CN101442035B (zh) * 2008-12-14 2011-03-16 天水华天科技股份有限公司 一种扁平无引线封装件及其生产方法
US8680627B2 (en) * 2011-01-14 2014-03-25 International Rectifier Corporation Stacked half-bridge package with a common conductive clip

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050218489A1 (en) * 2004-03-31 2005-10-06 Renesas Technology Corp. Semiconductor device
US20100090668A1 (en) * 2008-10-13 2010-04-15 Girdhar Dev A Stacked Field Effect Transistor Configurations
US20100171543A1 (en) * 2009-01-08 2010-07-08 Ciclon Semiconductor Device Corp. Packaged power switching device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110612604A (zh) * 2017-05-19 2019-12-24 新电元工业株式会社 电子模块

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