JP2014511027A - スイッチノードリンギングが低減された3次元電源モジュール - Google Patents
スイッチノードリンギングが低減された3次元電源モジュール Download PDFInfo
- Publication number
- JP2014511027A JP2014511027A JP2013553496A JP2013553496A JP2014511027A JP 2014511027 A JP2014511027 A JP 2014511027A JP 2013553496 A JP2013553496 A JP 2013553496A JP 2013553496 A JP2013553496 A JP 2013553496A JP 2014511027 A JP2014511027 A JP 2014511027A
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- Prior art keywords
- die
- power supply
- supply module
- terminal
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- 230000001360 synchronised effect Effects 0.000 claims abstract description 57
- 239000002184 metal Substances 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 150000001875 compounds Chemical class 0.000 claims description 9
- 230000005669 field effect Effects 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 claims description 2
- 230000003071 parasitic effect Effects 0.000 description 44
- 238000000034 method Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000005538 encapsulation Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 230000000712 assembly Effects 0.000 description 4
- 238000000429 assembly Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 241000217377 Amblema plicata Species 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
- H02M3/1588—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load comprising at least one synchronous rectifier element
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Dc-Dc Converters (AREA)
Abstract
Description
Claims (20)
- 電気的入力端子及び接地端子を有する電源モジュールであって、
ダイパッド及びリードを含むリードフレームであって、前記パッドが前記電気的入力端子であり、少なくとも1つのリードが接地端子である、前記リードフレーム、
制御FETダイと、前記制御FETダイの頂部上にスタックされる同期FETダイとを含む同期降圧コンバータ、
を含み、
前記制御FETダイが、第1の物理的領域、第1の能動領域、前記ダイの第1の辺における第1のソース端子、及び前記ダイの前記第1の辺とは反対側の第2の辺における第1のドレイン端子を有し、
前記同期FETダイが、前記ダイの第1の辺における第2のソース端子及び前記ダイの前記第1の辺とは反対側の第2の辺における第2のドレイン端子を有し、
前記制御FETダイの前記第1のドレイン端子が前記ダイパッドに直接付けられ、前記同期FETダイの前記第2のソース端子が金属クリップによって前記接地端子に接続される、
電源モジュール。 - 請求項1に記載の電源モジュールであって、前記同期FETダイが前記第1の物理的領域よりも小さくない第2の物理的領域、及び前記第1の能動領域よりも小さくない第2の能動領域を有し、前記第2のドレイン端子が前記第1のソース端子に取り付けられる、電源モジュール。
- 請求項2に記載の電源モジュールであって、前記制御FET及び前記同期FETがn型MOSFETである、電源モジュール。
- 請求項3に記載の電源モジュールであって、前記リードが前記パッドの辺に対して一列に配置される、電源モジュール。
- 請求項4に記載の電源モジュールであって、前記コンバータのスイッチノード端子として動作可能な第1の金属クリップをさらに含み、前記第1の金属クリップが、前記第1のソース端子及び前記第2のドレイン端子にハンダ付けされ、それぞれのリードに接続されるリッジを有する、電源モジュール。
- 請求項1に記載の電源モジュールであって、前記金属クリップが、前記第2のソース端子にハンダ付けされ、且つ、それぞれのリードに接続される1つ又は複数のリッジを有する、電源モジュール。
- 請求項6に記載の電源モジュールであって、前記制御FETが第1のゲート端子を有し、前記同期FETが第2のゲート端子を有する、電源モジュール。
- 請求項7に記載の電源モジュールであって、前記第1及び第2のゲート端子をリードに接続するワイヤボンドをさらに含む、電源モジュール。
- 請求項8に記載の電源モジュールであって、前記コンバータ、クリップ、及びワイヤボンドを封入し、外部部品への接続のため前記パッド及びリードの表面は封入せずに残す、パッケージング化合物をさらに含む、電源モジュール。
- 電源モジュールであって、外部入力端子と制御電界効果トランジスタ(FET)との間の第1の電気的経路と、外部接地端子と同期FETとの間の第2の電気的経路とを含み、前記第1の電気的経路が前記第2の電気的経路より電気的に抵抗性が小さい、電源モジュール。
- 請求項10に記載の電源モジュールであって、前記第2の電気的経路が金属クリップを含む、電源モジュール。
- 請求項10に記載の電源モジュールであって、前記第1の電気的経路がFETダイにハンダ付けされる金属パッドを含む、電源モジュール。
- 請求項11に記載の電源モジュールであって、前記金属クリップが前記外部接地端子及び前記同期FETダイに接触する、電源モジュール。
- 請求項13に記載の電源モジュールであって、前記金属クリップがソース端子において前記同期FETダイに接触する、電源モジュール。
- 請求項10に記載の電源モジュールであって、外部スイッチノード端子をさらに含む、電源モジュール。
- 請求項15に記載の電源モジュールであって、前記外部スイッチノード端子が金属クリップに接続される、電源モジュール。
- 請求項16に記載の電源モジュールであって、前記金属クリップが前記制御FET及び前記同期FETの両方に接触する、電源モジュール。
- 請求項17に記載の電源モジュールであって、前記制御FETが前記金属クリップの第1の表面にハンダ付けされ、前記同期FETが前記金属クリップの第2の表面にハンダ付けされる、電源モジュール。
- 請求項18に記載の電源モジュールであって、前記金属クリップが前記制御FETのソース端子に及び前記同期FETのドレイン端子にハンダ付けされる、電源モジュール。
- 請求項10に記載の電源モジュールであって、外部スイッチノード端子をさらに含み、前記外部入力端子が前記外部スイッチノード端子と前記外部接地端子の間に配置される、電源モジュール。
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US13/021,969 | 2011-02-07 | ||
US13/021,969 US20120200281A1 (en) | 2011-02-07 | 2011-02-07 | Three-Dimensional Power Supply Module Having Reduced Switch Node Ringing |
PCT/US2012/024171 WO2012109265A2 (en) | 2011-02-07 | 2012-02-07 | Three-dimensional power supply module having reduced switch node ringing |
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JP2014511027A true JP2014511027A (ja) | 2014-05-01 |
JP2014511027A5 JP2014511027A5 (ja) | 2015-03-26 |
JP6131195B2 JP6131195B2 (ja) | 2017-05-17 |
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US (1) | US20120200281A1 (ja) |
JP (1) | JP6131195B2 (ja) |
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Also Published As
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US20120200281A1 (en) | 2012-08-09 |
WO2012109265A3 (en) | 2012-11-01 |
JP6131195B2 (ja) | 2017-05-17 |
CN103348469A (zh) | 2013-10-09 |
CN108987365A (zh) | 2018-12-11 |
WO2012109265A2 (en) | 2012-08-16 |
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