CN103280497B - 用于制造光电子器件的方法以及光电子器件 - Google Patents

用于制造光电子器件的方法以及光电子器件 Download PDF

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Publication number
CN103280497B
CN103280497B CN201310119419.4A CN201310119419A CN103280497B CN 103280497 B CN103280497 B CN 103280497B CN 201310119419 A CN201310119419 A CN 201310119419A CN 103280497 B CN103280497 B CN 103280497B
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CN103280497A (zh
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帕特里克·罗德
马丁·斯特拉斯伯格
卡尔·英格尔
卢茨·赫佩尔
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07551—Controlling the environment, e.g. atmosphere composition or temperature characterised by changes in properties of the bond wires during the connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires

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CN201310119419.4A 2008-06-27 2009-06-09 用于制造光电子器件的方法以及光电子器件 Active CN103280497B (zh)

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DE102008030584.7 2008-06-27
DE102008030584A DE102008030584A1 (de) 2008-06-27 2008-06-27 Verfahren zur Herstellung eines optoelektronischen Bauelementes und optoelektronisches Bauelement

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US (2) US8283191B2 (https=)
EP (1) EP2289115B1 (https=)
JP (1) JP5520942B2 (https=)
KR (1) KR101629984B1 (https=)
CN (2) CN103280497B (https=)
DE (1) DE102008030584A1 (https=)
TW (1) TWI390773B (https=)
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Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8471288B2 (en) * 2009-09-15 2013-06-25 Toyoda Gosei Co., Ltd. Group III nitride semiconductor light-emitting device including an auxiliary electrode in contact with a back surface of an n-type layer
KR101039999B1 (ko) * 2010-02-08 2011-06-09 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR100986560B1 (ko) * 2010-02-11 2010-10-07 엘지이노텍 주식회사 발광소자 및 그 제조방법
DE102010025320B4 (de) * 2010-06-28 2021-11-11 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
KR101252032B1 (ko) 2010-07-08 2013-04-10 삼성전자주식회사 반도체 발광소자 및 이의 제조방법
KR101761385B1 (ko) 2010-07-12 2017-08-04 엘지이노텍 주식회사 발광 소자
KR101692410B1 (ko) * 2010-07-26 2017-01-03 삼성전자 주식회사 발광소자 및 그 제조방법
DE102010033137A1 (de) 2010-08-03 2012-02-09 Osram Opto Semiconductors Gmbh Leuchtdiodenchip
DE102010044986A1 (de) * 2010-09-10 2012-03-15 Osram Opto Semiconductors Gmbh Leuchtdiodenchip und Verfahren zur Herstellung eines Leuchtdiodenchips
KR101114191B1 (ko) * 2010-09-17 2012-03-13 엘지이노텍 주식회사 발광소자
KR101761386B1 (ko) * 2010-10-06 2017-07-25 엘지이노텍 주식회사 발광 소자
KR101730152B1 (ko) * 2010-10-06 2017-04-25 엘지이노텍 주식회사 발광 소자
EP2442374B1 (en) 2010-10-12 2016-09-21 LG Innotek Co., Ltd. Light emitting device
DE102011011140A1 (de) 2011-02-14 2012-08-16 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung von optoelektronischen Halbleiterchips
JP5050109B2 (ja) 2011-03-14 2012-10-17 株式会社東芝 半導体発光素子
DE102011016302B4 (de) * 2011-04-07 2026-01-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
TWI434405B (zh) * 2011-06-07 2014-04-11 國立交通大學 具有積體電路與發光二極體之異質整合結構及其製作方法
KR101880445B1 (ko) * 2011-07-14 2018-07-24 엘지이노텍 주식회사 발광소자, 발광소자 제조방법, 발광소자 패키지, 및 라이트 유닛
CN103000777B (zh) * 2011-09-15 2018-08-07 晶元光电股份有限公司 发光元件
KR101827975B1 (ko) * 2011-10-10 2018-03-29 엘지이노텍 주식회사 발광소자
CN103050593A (zh) * 2011-10-17 2013-04-17 大连美明外延片科技有限公司 AlGaInP四元系发光二极管外延片及其生长方法
EP2597687B1 (en) * 2011-11-23 2016-02-03 Imec Method for producing a GaN LED device
CN110246941A (zh) * 2012-03-19 2019-09-17 亮锐控股有限公司 在硅衬底上生长的发光器件
JP5740350B2 (ja) * 2012-05-31 2015-06-24 株式会社東芝 半導体発光素子
CN104350619B (zh) 2012-06-07 2017-08-04 皇家飞利浦有限公司 具有在晶片水平形成的模制化合物中的金属柱的芯片级发光器件
DE102012105176B4 (de) * 2012-06-14 2021-08-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
TW201401552A (zh) * 2012-06-19 2014-01-01 High Power Optoelectronics Inc 發光二極體的熱應力釋放結構
US8552457B1 (en) * 2012-08-07 2013-10-08 High Power Opto. Inc. Thermal stress releasing structure of a light-emitting diode
JP5881560B2 (ja) 2012-08-30 2016-03-09 株式会社東芝 半導体発光装置及びその製造方法
US9082692B2 (en) * 2013-01-02 2015-07-14 Micron Technology, Inc. Engineered substrate assemblies with epitaxial templates and related systems, methods, and devices
DE102013103409A1 (de) * 2013-04-05 2014-10-09 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und optoelektronisches Modul
KR102188495B1 (ko) 2014-01-21 2020-12-08 삼성전자주식회사 반도체 발광소자의 제조 방법
JP5788046B2 (ja) * 2014-04-03 2015-09-30 株式会社東芝 半導体発光素子
KR102163967B1 (ko) * 2014-04-16 2020-10-12 엘지이노텍 주식회사 발광소자 및 조명시스템
KR102163956B1 (ko) * 2014-04-07 2020-10-12 엘지이노텍 주식회사 발광소자 및 조명시스템
EP3131129B1 (en) * 2014-04-07 2020-07-15 LG Innotek Co., Ltd. Light-emitting element
KR102153125B1 (ko) * 2014-06-11 2020-09-07 엘지이노텍 주식회사 발광소자 및 조명시스템
DE102014108373A1 (de) 2014-06-13 2015-12-17 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102015105509A1 (de) * 2015-04-10 2016-10-13 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements
DE102015111046B9 (de) * 2015-07-08 2022-09-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
KR102432015B1 (ko) * 2015-11-09 2022-08-12 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 자외선 발광소자 및 발광소자 패키지
CN105470359B (zh) * 2015-12-31 2018-05-08 天津三安光电有限公司 具有内嵌式电极结构的高功率led结构及其制备方法
DE102017103041B4 (de) * 2017-02-15 2023-12-14 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer Vielzahl von optoelektronischen Bauelementen und optoelektronisches Bauelement
US11282981B2 (en) 2017-11-27 2022-03-22 Seoul Viosys Co., Ltd. Passivation covered light emitting unit stack
US10892296B2 (en) * 2017-11-27 2021-01-12 Seoul Viosys Co., Ltd. Light emitting device having commonly connected LED sub-units
US11527519B2 (en) 2017-11-27 2022-12-13 Seoul Viosys Co., Ltd. LED unit for display and display apparatus having the same
US10892297B2 (en) 2017-11-27 2021-01-12 Seoul Viosys Co., Ltd. Light emitting diode (LED) stack for a display
US12100696B2 (en) 2017-11-27 2024-09-24 Seoul Viosys Co., Ltd. Light emitting diode for display and display apparatus having the same
US10748881B2 (en) 2017-12-05 2020-08-18 Seoul Viosys Co., Ltd. Light emitting device with LED stack for display and display apparatus having the same
US10886327B2 (en) 2017-12-14 2021-01-05 Seoul Viosys Co., Ltd. Light emitting stacked structure and display device having the same
US11552057B2 (en) 2017-12-20 2023-01-10 Seoul Viosys Co., Ltd. LED unit for display and display apparatus having the same
US11522006B2 (en) 2017-12-21 2022-12-06 Seoul Viosys Co., Ltd. Light emitting stacked structure and display device having the same
US11552061B2 (en) 2017-12-22 2023-01-10 Seoul Viosys Co., Ltd. Light emitting device with LED stack for display and display apparatus having the same
US11114499B2 (en) 2018-01-02 2021-09-07 Seoul Viosys Co., Ltd. Display device having light emitting stacked structure
US10784240B2 (en) 2018-01-03 2020-09-22 Seoul Viosys Co., Ltd. Light emitting device with LED stack for display and display apparatus having the same
DE102019106521A1 (de) * 2019-03-14 2020-09-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Aufwachsstruktur für ein Strahlung emittierendes Halbleiterbauelement und Strahlung emittierendes Halbleiterbauelement
US11296266B2 (en) * 2019-11-26 2022-04-05 Facebook Technologies, Llc LED array having transparent substrate with conductive layer for enhanced current spread
EP4419949B1 (en) * 2022-12-30 2026-01-21 Shanghai United Imaging Healthcare Co., Ltd. Photon-counting detectors for detecting radiation rays

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101027795A (zh) * 2004-09-27 2007-08-29 松下电器产业株式会社 半导体发光元件及其制造方法和安装方法、发光器件

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6121638A (en) * 1995-09-12 2000-09-19 Kabushiki Kaisha Toshiba Multi-layer structured nitride-based semiconductor devices
US5763941A (en) * 1995-10-24 1998-06-09 Tessera, Inc. Connection component with releasable leads
DE59814431D1 (de) 1997-09-29 2010-03-25 Osram Opto Semiconductors Gmbh Halbleiterlichtquelle und Verfahren zu ihrer Herstellung
US6465744B2 (en) * 1998-03-27 2002-10-15 Tessera, Inc. Graded metallic leads for connection to microelectronic elements
EP2270875B1 (de) 2000-04-26 2018-01-10 OSRAM Opto Semiconductors GmbH Strahlungsmittierendes Halbleiterbauelement und dessen Herstellungsverfahren
DE10020464A1 (de) * 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis
US20020017652A1 (en) 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
DE10147886B4 (de) * 2001-09-28 2006-07-13 Osram Opto Semiconductors Gmbh Lumineszenzdiode mit vergrabenem Kontakt und Herstellungsverfahren
US6828596B2 (en) * 2002-06-13 2004-12-07 Lumileds Lighting U.S., Llc Contacting scheme for large and small area semiconductor light emitting flip chip devices
US7115896B2 (en) * 2002-12-04 2006-10-03 Emcore Corporation Semiconductor structures for gallium nitride-based devices
US7230292B2 (en) * 2003-08-05 2007-06-12 Micron Technology, Inc. Stud electrode and process for making same
DE102005007601B4 (de) * 2004-02-20 2023-03-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement, Vorrichtung mit einer Mehrzahl optoelektronischer Bauelemente und Verfahren zur Herstellung eines optoelektronischen Bauelements
US20050205883A1 (en) * 2004-03-19 2005-09-22 Wierer Jonathan J Jr Photonic crystal light emitting device
DE102005016592A1 (de) * 2004-04-14 2005-11-24 Osram Opto Semiconductors Gmbh Leuchtdiodenchip
JP4826703B2 (ja) * 2004-09-29 2011-11-30 サンケン電気株式会社 半導体素子の形成に使用するための板状基体
US20060124956A1 (en) 2004-12-13 2006-06-15 Hui Peng Quasi group III-nitride substrates and methods of mass production of the same
US7413918B2 (en) * 2005-01-11 2008-08-19 Semileds Corporation Method of making a light emitting diode
CN100372137C (zh) 2005-05-27 2008-02-27 晶能光电（江西）有限公司 具有上下电极结构的铟镓铝氮发光器件及其制造方法
DE102006008929A1 (de) * 2006-02-23 2007-08-30 Azzurro Semiconductors Ag Nitridhalbleiter-Bauelement und Verfahren zu seiner Herstellung
US9406505B2 (en) 2006-02-23 2016-08-02 Allos Semiconductors Gmbh Nitride semiconductor component and process for its production
EP1883141B1 (de) 2006-07-27 2017-05-24 OSRAM Opto Semiconductors GmbH LD oder LED mit Übergitter-Mantelschicht
DE102006046237A1 (de) * 2006-07-27 2008-01-31 Osram Opto Semiconductors Gmbh Halbleiter-Schichtstruktur mit Übergitter
DE102006043400A1 (de) * 2006-09-15 2008-03-27 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
US7697584B2 (en) * 2006-10-02 2010-04-13 Philips Lumileds Lighting Company, Llc Light emitting device including arrayed emitters defined by a photonic crystal

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101027795A (zh) * 2004-09-27 2007-08-29 松下电器产业株式会社 半导体发光元件及其制造方法和安装方法、发光器件

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TW201004000A (en) 2010-01-16
US20120322186A1 (en) 2012-12-20
EP2289115A1 (de) 2011-03-02
US20110104836A1 (en) 2011-05-05
CN102067343A (zh) 2011-05-18
DE102008030584A1 (de) 2009-12-31
US8283191B2 (en) 2012-10-09
JP2011525708A (ja) 2011-09-22
TWI390773B (zh) 2013-03-21
KR101629984B1 (ko) 2016-06-13
CN102067343B (zh) 2013-05-08
CN103280497A (zh) 2013-09-04
US8956897B2 (en) 2015-02-17
EP2289115B1 (de) 2017-08-09
JP5520942B2 (ja) 2014-06-11
KR20110030542A (ko) 2011-03-23
WO2009155897A1 (de) 2009-12-30

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