JP5520942B2 - オプトエレクトロニクス部品の製造方法 - Google Patents

オプトエレクトロニクス部品の製造方法 Download PDF

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Publication number
JP5520942B2
JP5520942B2 JP2011515085A JP2011515085A JP5520942B2 JP 5520942 B2 JP5520942 B2 JP 5520942B2 JP 2011515085 A JP2011515085 A JP 2011515085A JP 2011515085 A JP2011515085 A JP 2011515085A JP 5520942 B2 JP5520942 B2 JP 5520942B2
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layer
stack
partial
epitaxially grown
buffer
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Expired - Fee Related
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JP2011515085A
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Japanese (ja)
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JP2011525708A5 (https=
JP2011525708A (ja
Inventor
パトリック ローデ
マルチン ストラスバーグ
カール エンゲル
ルッツ ヘッペル
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07551—Controlling the environment, e.g. atmosphere composition or temperature characterised by changes in properties of the bond wires during the connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
JP2011515085A 2008-06-27 2009-06-09 オプトエレクトロニクス部品の製造方法 Expired - Fee Related JP5520942B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008030584.7 2008-06-27
DE102008030584A DE102008030584A1 (de) 2008-06-27 2008-06-27 Verfahren zur Herstellung eines optoelektronischen Bauelementes und optoelektronisches Bauelement
PCT/DE2009/000810 WO2009155897A1 (de) 2008-06-27 2009-06-09 Verfahren zur herstellung eines optoelektronischen bauelementes und ein optoelektronisches bauelement

Publications (3)

Publication Number Publication Date
JP2011525708A JP2011525708A (ja) 2011-09-22
JP2011525708A5 JP2011525708A5 (https=) 2012-07-26
JP5520942B2 true JP5520942B2 (ja) 2014-06-11

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JP2011515085A Expired - Fee Related JP5520942B2 (ja) 2008-06-27 2009-06-09 オプトエレクトロニクス部品の製造方法

Country Status (8)

Country Link
US (2) US8283191B2 (https=)
EP (1) EP2289115B1 (https=)
JP (1) JP5520942B2 (https=)
KR (1) KR101629984B1 (https=)
CN (2) CN103280497B (https=)
DE (1) DE102008030584A1 (https=)
TW (1) TWI390773B (https=)
WO (1) WO2009155897A1 (https=)

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Also Published As

Publication number Publication date
TW201004000A (en) 2010-01-16
US20120322186A1 (en) 2012-12-20
EP2289115A1 (de) 2011-03-02
US20110104836A1 (en) 2011-05-05
CN102067343A (zh) 2011-05-18
DE102008030584A1 (de) 2009-12-31
US8283191B2 (en) 2012-10-09
JP2011525708A (ja) 2011-09-22
TWI390773B (zh) 2013-03-21
KR101629984B1 (ko) 2016-06-13
CN103280497B (zh) 2016-08-03
CN102067343B (zh) 2013-05-08
CN103280497A (zh) 2013-09-04
US8956897B2 (en) 2015-02-17
EP2289115B1 (de) 2017-08-09
KR20110030542A (ko) 2011-03-23
WO2009155897A1 (de) 2009-12-30

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