CN103262236A - 半导体元件中的无铅结构 - Google Patents
半导体元件中的无铅结构 Download PDFInfo
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- CN103262236A CN103262236A CN2011800519840A CN201180051984A CN103262236A CN 103262236 A CN103262236 A CN 103262236A CN 2011800519840 A CN2011800519840 A CN 2011800519840A CN 201180051984 A CN201180051984 A CN 201180051984A CN 103262236 A CN103262236 A CN 103262236A
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- contact mat
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- free solder
- solder bumps
- copper post
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 229910052802 copper Inorganic materials 0.000 claims abstract description 94
- 239000010949 copper Substances 0.000 claims abstract description 94
- 229910000679 solder Inorganic materials 0.000 claims abstract description 94
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 91
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 239000002184 metal Substances 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 238000005476 soldering Methods 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 14
- 229910052718 tin Inorganic materials 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 3
- 150000001879 copper Chemical class 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 230000005496 eutectics Effects 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 230000035882 stress Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 229920000297 Rayon Polymers 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 2
- NHDHVHZZCFYRSB-UHFFFAOYSA-N pyriproxyfen Chemical compound C=1C=CC=NC=1OC(C)COC(C=C1)=CC=C1OC1=CC=CC=C1 NHDHVHZZCFYRSB-UHFFFAOYSA-N 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
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- 238000007639 printing Methods 0.000 description 1
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- 239000002002 slurry Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910000597 tin-copper alloy Inorganic materials 0.000 description 1
- 229910000969 tin-silver-copper Inorganic materials 0.000 description 1
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Abstract
一种半导体元件,其包括:一半导体晶片(306);多个无铅焊料凸块(308),其设置在该半导体晶片之表面上;一基板(310),其包括多个金属层(318)与多个介电层(317),该金属层之一者包含多个接触垫(312),以对应于该多个无铅焊料凸块,且该介电层之一者为外部介电层,其具有用于该接触垫之各多个开口;各多个铜柱(302),其设置在该接触垫上。用于各该接触垫之各该铜柱,从该接触垫经由用于该接触垫之各该开口而延伸。该半导体晶片安装于该基板上,而具有在该多个无铅焊料凸块与该多个铜柱间之连接。
Description
技术领域
本发明一般有关于半导体元件,以及更特别有关于一种用于半导体元件之无铅焊料组装及其制造方法。
背景技术
对于更小更轻、且更精简电子设备日益增加之需求导致对半导体封装伴随而来的要求,其必须具有较小轮廓与安装面积或占用面积(footprint)。对此要求之一种反应为发展出一种球格栅阵列(BGA)半导体封装,此为一种“表面安装”且以多个焊球以电子方式连接至印刷电路板(PCB)。对此要求之另一种反应为发展出一种“覆晶”方法,将半导体芯片(chip)或晶片(die)装附且连接至基板(例如:PCB或引线框)。此种覆晶安装方法涉及在晶片之主动表面上形成凸块接触(例如:焊球),然后将此晶片从上朝下反转或“翻转”,且将此凸块接触回流(即,将此凸块接触加热至熔点)而熔化至基板上相对应之垫上。
在BGA封装以及覆晶安装与连接方法中,热机械可靠度成为电子工业越来越关切的问题。值得注意的是,焊料接合之可靠度为成功应用此种安装与连接方法之最关键问题之一。
在覆晶封装中,将集成电路晶片所具有焊料凸块熔化至基板上相对应之垫。此种焊料接合由于热应力循环,其在高应力点容易破裂。
有害物质管制(RoHS:Restriction of Hazardous Substance)规定限制在电子设备组件中铅之含量浓度。为了遵守RoHS之要求,锡铅焊料被无铅焊料例如锡银焊料取代,其符合铅含量浓度小于0.1%重量百分比之RoHS要求。然而,由于无铅焊料通常较锡铅焊料容易碎裂,因此,此种取代会不利地影响到焊料接合之热机械可靠度。
本发明之一或更多个实施例可以解决上述一或更多个问题。
发明内容
在一实施例中,提供一种半导体元件。此半导体元件包括:一半导体晶片、与多个设置在此半导体晶片表面上之无铅焊料凸块。一基板可以包括:多个金属层与多个介电层。此等多个金属层之一者可以包括多个接触垫,其对应于多个无铅焊料凸块;以及此等多个介电层之一者可以为外部介电层,其具有用于多个接触垫之各多个开口。可以将各多个铜柱设置在多个接触垫上。此用于各接触垫之各铜柱可以从接触垫经由用于此接触垫之开口而延伸。此半导体晶片可以安装在基板上,而具有在多个无铅焊料凸块与多个铜柱间之连接。
在此实施例中,多个无铅焊料凸块可以包含锡与银,此多个接触垫可以为铜,此外部介电层可以为环氧树脂复合物、其粘附于多个接触垫周围之多个接触垫。此用于各接触垫之各铜柱可以具有:远离该接触垫之终端盖,以及在接触垫与终端盖间之部份,且此终端盖之宽度大于此部份之宽度,此部份之高度可以大于终端盖之高度。此用于各接触垫之各铜柱可以经由各开口延伸,而超过外部介电层之厚度,且超过用于接触垫各开口之宽度。此用于各接触垫之各铜柱可以经由各开口延伸,而超过外部介电层之厚度。此用于各接触垫之各开口可以为圆柱形开口,其高度等于外部介电层之厚度,且具有在接触垫周围内之直径。此用于接触垫之各铜柱可以从接触垫经由各开口延伸,且超过各开口之高度与直径。
在此实施例中,各多个无铅焊料凸块可以回流焊接至对应于无铅焊料凸块之接触垫上之各铜柱。此半导体元件可以更包括多个无铅焊球,其各回流焊接至以格栅配置之各多个铜柱,此用于各接触垫之各铜柱,可以经由基板之多个金属层,而电性地耦接至接触垫所对应之无铅焊料凸块。此半导体元件可以更包括在各多个铜柱上之锡与铜之覆盖层(coating),其中各此等多个无铅焊料凸块、与在各铜柱上之覆盖层一起回流焊接至对应于无铅焊料凸块之接触垫上之各铜柱。
在此实施例中,各此等多个铜柱可以具有经加工之粗糙表面,用于加强各多个无铅焊料凸块之回流焊接至对应于无铅焊料凸块之接触垫上之各铜柱上。此半导体晶片表面可以具有各硅金属垫,其设置在各多个无铅焊料凸块;各无铅焊料凸块可以回流焊接至各硅金属垫之第一区域、与各铜柱之第二区域;以及此第一区域与第二区域可以相等,且各超过经由各铜柱内部部份之横截面面积,此内部部份是在接触垫与第二区域之间。此外部介电层可以较多个其他介电层更有挠性。
在另一实施例中,此用于制造半导体元件之方法包括形成一半导体晶片,其具有多个无铅焊料凸块用于连接至基板。可以形成一中间基板且可以包括外部介电层与多个接触垫。此等多个接触垫可以经由在外部介电层中各此等多个开口而曝露,可以在多个接触垫上形成各此等多个铜柱。此用于各接触垫之各铜柱,可以从接触垫经由用于接触垫之各开口延伸。此半导体晶片之多个无铅焊料凸块、与此中间基板之多个接触垫上之各多个铜柱对齐,且此等多个无铅焊料凸块可以回流焊接至各多个铜柱。
在此方法之实施例中,此形成用于各接触垫之各铜柱可以包括形成各铜柱,其具有远离该接触垫之终端盖、且具有在该接触垫与终端盖间之部份。此终端盖之宽度大于此接触垫与终端盖间铜柱之部份之宽度。此形成用于各接触垫之各铜柱可以包括:形成在接触垫与终端盖间之各铜柱之部份,至其厚度大于终端盖之厚度。此形成半导体晶片可以包括形成此半导体晶片,其具有在此多个无铅焊料凸块之各多个硅金属垫;以及此回流焊接可以包括:将各无铅焊料凸块回流焊接至各硅金属垫之第一区域、与各铜柱之第二区域;此第一区域与第二区域可以尺寸相等,且各大于经由接触垫与终端盖间各铜柱之部份之横截面面积。此方法之实施例可以更包括:以锡与铜共晶覆盖各多个铜柱,其中此回流焊接可以包括:将各多个无铅焊料凸块与在各铜柱上覆盖层回流焊接至在接触垫上各铜柱,而可以对应至无铅焊料凸块。
此用于制造半导体元件之另一方法包括形成一半导体晶片,其具有多个无铅焊料凸块用于连接至基板。可以形成一中间基板且可以包括外部介电层与多个接触垫。此等多个接触垫可以经由在外部介电层中各多个开口而曝露。多个接触垫可以经由各多个开口,以各多个预焊料垫覆盖。此半导体晶片之多个无铅焊料凸块、可以与此中间基板上各多个预焊料垫对齐。此等多个无铅焊料凸块与多个预焊料垫可以回流焊接至多个接触垫上。在此实施例中,此等多个无铅焊料凸块可以包括锡与银,多个接触垫可以为铜,以及此等多个预焊料垫可以包括锡与铜。
应了解可以在以下「实施方式」与「权利要求」中说明各种其他实施例。
本发明实施例之各种观点与优点,将由检视以下详细说明并参考所附图式而为明显。
附图说明
图1为用于覆晶封装之集成电路基板之上视图;
图2为图1基板沿着2-2线之横截面图,此基板包括集成电路晶片与盖,其一起形成覆晶封装;
图3为覆晶封装之一部份之横截面图;
图4为柱之一实施例之横截面图;
图5为柱之另一实施例之横截面图;
图6为具有覆盖层之柱之横截面图;
图7为制造覆晶结构之过程之流程图;
图8为半导体晶片之一部份与基板之一部份之横截面图;
图9显示在回流焊接之后图8之半导体晶片与基板;以及
图10为用于制造图9结构之过程之流程图。
具体实施方式
为使本发明的实施例要解决的技术问题、技术方案和优点更加清楚,下面将结合附图及具体实施例进行详细描述。
图1为用于半导体元件例如覆晶封装之集成电路基板100之上视图。此覆晶封装为热加强式球格栅阵列(BGA),其具有面向基板100之半导体晶片之主动表面。由于其布局,覆晶封装可以应用作为外部散热器,而耦接至半导体晶片之背面。此散热器为主动式或被动式,以改善热去除效率。集成电路基板100包括区域102,其具有接触垫104,而设有铜柱及/或铜与锡之覆盖层用于装附覆晶晶片;且具有接触垫108用于装附其他组件,例如芯片电容器。
图2为图1基板沿着线2-2之横截面图,且包括:集成电路晶片210与盖201,其在一起形成覆晶封装。此盖201耦接至基板202,且包括一内表面203与一内壁204,以形成一凹处206。此盖更包括一足部份208,其藉由接合剂209例如粘胶耦接至基板202。集成电路晶片210具有硅金属接触垫212与相对应焊料凸块214,其与基板之接触垫216接触。在一或更多个实施例中,此接触垫216具有相关铜柱及/或覆盖层,用于与焊料凸块214接合。基板202之外介电层222具有用于接触垫216之开口。在集成电路晶片210上可以使用粘胶218,在集成电路晶片210下可以使用填料220。亦如同所显示,此基板202为多层基板,其具有形成于多个金属层上之导体,此等金属层由介电层所分开。在基板表面上之电容器224藉由以下元件耦接至集成电路晶片:在基板金属层上之导体226,与在基板底部上相对应电力接触238。此电容器亦耦接至接地平面228与相对应接触垫230。其他导体232可以从基板顶上之接触垫直接延伸至在基板底部上之接触垫234。此亦显示在多层基板各层中之导体236。此基板布线图界定各种导体,以致于可以制成适当连接,其从集成电路晶片之接触垫(经由在基板顶部上之焊料凸块与接触垫)至基板底部上之接触。在一实施例中,基板底部具有配置成格栅阵列之焊球240,以及此接触垫234具有相连接之铜柱及/或覆盖层,用于与焊球240接合。
图3为覆晶封装之一部份之横截面图。覆晶封装之结构包括具有柱302之焊料接合,以去除在基板垫侧上介电开口边缘352之应力集中点,因而增加覆晶封装之可靠度。
在一或更多个实施例中,此半导体晶片306之表面包括:硅金属垫308,与最初设置在硅金属垫308上之焊料凸块304。此多层基板310包括在基板之金属层中之接触垫312。此接触垫312经由金属穿孔314、金属层318、以及垫319,连接至覆晶封装之焊球(例如:图2之240)、或覆晶封装中另一组件。在一替代实施例中,此在图3中所示金属穿孔314可以渐渐变尖,以致于具有倾斜侧壁。在其他实施例中,金属穿孔314可以具有其他熟知形状。此多层基板310具有一外部介电层316,其具有用于接触垫312之开口而以柱302填入。
在一实施例中,此焊料凸块304是由无铅合金构成,其例如为锡、锡-银、锡-银-铜、锡-铜、或金。此种无铅合金可以遵守RoHS标准,但其没有柱302会如此脆,以致在覆晶封装之重复热循环期间焊料凸块304会破裂。此种热循环是由在供应电力操作期间集成电路306之加热、以及在将电源去除之后其冷却至周围温度所造成。此种破裂在当晶片306之尺寸对基板310之尺寸之比例大时特别会造成问题。此在封装中大的晶片/基板比例会造成较高应力。此柱302可以由铜构成,其较无铅焊料凸块304更具挠性。因此,此具有整合式柱之焊料凸块结构可以承受较高热机械应力,防止无铅焊料凸块304破裂,以及增加覆晶封装之可靠度。
此外部介电层316为一种Ajinomoto建构薄膜(ABF),其可以由Ajinomoto公司购得。在一实施例中,此环氧树脂复合物较使用于基板表面上一些焊料遮罩材料为软。此挠性在即使当柱302完全填入于介电层中的开口时,允许此柱302在热机械应力下弯曲。外部介电层316较多个其他介电层例如介电层317更具挠性。此外部介电层316完全围绕接触垫312周围,而粘附于接触垫312。
在一实施例中,此柱302具有终端盖320与内部部份322。此柱302之终端盖320远离接触垫312,以及此柱302之内部部份322是介于接触垫312与终端盖320之间。此终端盖320之宽度326大于内部部份322之宽度328。此柱之较大终端盖会增加用于凸块之接触面积,且降低此凸块之整个应力位准。在一实施例中,此在外部介电层316中之开口为圆柱形,且其高度324等于在接触垫312上外部介电层316之厚度。此开口亦具有在接触垫312周围内之直径,且在当此柱填入于开口时,此直径等于圆柱形柱302之宽度328。此柱302从接触垫312经由开口延伸超过其高度与直径。此在一实施例中以下列方式达成:藉由将铜镀上铜接触垫312,一直至所镀铜装满介电层316中之开口且从其流出为止。
此覆晶封装藉由将焊料凸块304回流至硅金属垫308与柱302上而制成。这将焊料凸块304熔化,在半导体晶306与基板310间形成机械与电性连接。在一实施例中,此回流焊接导致在焊料凸块304与硅金属垫308间之接触面积大致等于焊料凸块304与柱302之终端盖320间之接触面积。当接触面积大致相等时,会将此接触面积间之应力平衡。此接触面积尺寸间大的差异会造成接触面积间应力不平衡,导致故障容易增加。因此,接触面积之尺寸无须刚好相等,当接触面积尺寸接近时,会造成应力更加平衡。
在一实施例中,此具有硅金属垫308之焊料凸块304与柱302之接触面积大于、经由此柱302之内部部份322之横截面面积。藉由去除此介电开口边缘352之应力集中点,以及增加焊料接合之接触面积,可以增加焊料接合之疲劳寿命。
在一实施例中,此柱302具有经由内部部份322之宽度328为50至85微米;此终端盖320之宽度326为50至115微米,其高度324小于30微米。对于具有宽度326(b)大于宽度328(a)、以及高度324(c)之柱结构302,其高度324与宽度328之比通常小于1(c/a<1)。在一实施例中,对于垫308之宽度340(f)与柱302之宽度326(b),此比例(f/b)大约等于1。在其他实施例中,此比例之范围是.50≦f/b≦1.50。熟习此技术人士了解,随着技术进步,较小的凸块间距与较小介电开口为可行的。
图4为根据一实施例柱402之横截面图。此柱402从接触垫312经由在外部介电层316中的开口之宽度406而延伸。然而,因为柱之宽度410小于开口之宽度406,此柱402并未完全填满此开口,且在柱402与开口之侧壁之间形成间隙。因此,即使此柱402从接触垫312经由开口而延伸,此柱402并未延伸超过外部介电层316中的开口之宽度406。在一典范实施例中,此柱402之高度412(d)与在接触垫312上介电层316之高度420(c)之比大于1.1(d/c≧1.1)。在一特定例中,d可以大于c大约2μm。
图5为根据另一实施例柱502之横截面图。此柱502完全填满在外部介电层316中之开口。此柱502从接触垫312经由开口延伸,而并未超过开口之高度508,且并未超过开口之宽度510。
在一实施例中,此柱502具有一经加工之粗糙表面,用于加强无铅凸块之回流焊接至柱502上。
图6为具有覆盖层604之柱602之横截面图。此覆盖层604加强无铅凸块606之回流焊接至柱602上。
在一实施例中,此预焊料覆盖层604印刷在柱602上,且由锡与铜所构成,而焊料凸块606是由包括锡与银之无铅合金所构成。在回流焊接期间,焊料凸块606与覆盖层604完全熔化以形成焊料接合。在回流焊接期间,覆盖层604造成焊料凸块606在柱602之附近具有减少之银成份。此使得当焊料凸块606受到最大热机械应力时更柔软且较不容易故障。因此,焊料凸块606较不可能由于柱602所未吸收之任何热机械应力而破裂。
图7为根据一实施例制造覆晶结构之过程之流程图。
在步骤702,此所形成半导体晶片具有无铅焊料凸块,用于连接至基板。在步骤704,形成中间基板,其包括:外部介电层、以及经由此外部介电层中的开口所曝露之接触垫。
在步骤706,在接触垫上形成铜柱。此用于各接触垫之铜柱从此接触垫经由用于此接触垫之开口而延伸。在一实施例中,形成用于各接触垫之铜柱,其具有:终端盖,其远离接触垫;以及柱,其具有在接触垫与终端盖间之内部部份。此终端盖之宽度大于内部部份之宽度,且内部部份之高度大于终端盖之高度。
此在基板上形成铜柱之范例方法为将干性薄膜阻抗材料或介电层涂布在基板之外层,然后形成开口以曝露在基板中之铜接触垫。在接触垫上镀铜以形成柱,然后去除此干性薄膜阻抗材料,且对铜柱之顶实施表面处理或涂布预焊料。此具有铜柱结构之优点为,此柱之宽度可以与介电或焊料遮罩开口之宽度无关。因此,可以将铜柱顶部之宽度与硅金属垫之宽度(图3,308)以较佳比例匹配,以形成用于焊料接合之更均匀形状,且降低整个凸块应力。
在步骤708,此铜柱经由开口以无铅预焊料所构成之覆盖层而覆盖。在步骤710,此半导体晶片之无铅焊料凸块与在中间基板之接触垫上之铜柱对齐。
在步骤712,无铅焊料凸块与覆盖层回流焊接至铜柱上。在一实施例中,各无铅焊料凸块回流焊接至硅金属垫之区域、以及与覆盖铜柱之相等区域,且此等区域各超过经由铜柱之内部部份之横截面面积。
图8为根据一实施例半导体晶片802之一部份与基板804之一部份之横截面图。此无铅焊料凸块806是由包含锡与银(例如:SnAg2.3或SnAg1.8)之合金所构成,接触垫312是由铜所构成,以及预焊料垫810是由锡与铜(例如:SnCu0.7)之合金所构成。
在一实施例中,焊料浆包括锡-铜合金之焊料流与粉末。为了产生预焊料垫810,此焊料浆可以经由外部介电层812中之开口,被丝网印刷至外部介电层812上与接触垫312上。此预焊料浆填满外部介电层812中之开口,且从接触垫312经由且超过此开口之宽度814与高度816而延伸,因此形成预焊料垫810。
在一实施例中,此介电开口之宽度814(f)对硅金属垫308之宽度820(g)之比例大约等于1(f/g=1)。在另一实施例中,此介电开口之宽度814可以稍微大于硅金属垫308之宽度820(例如:f/g≧1.1)。
图9显示在根据一实施例于回流焊接之后图8之半导体晶片802与基板804。此焊料接合902是在回流焊接期间由图8之焊料凸块806与预焊料垫810所形成。
在一实施例中,此回流将焊料凸块806与预焊料垫810之焊料浆熔化,同时排除焊料流。此焊料凸块806与预焊料垫810之不同合金在回流焊接期间部份地扩散至彼此之中。
图10为用于制造图9结构之过程之流程图。在步骤1002,形成半导体晶片,其具有无铅焊料凸块,用于连接至基板。在步骤1004,形成中间基板,其包括:外部介电层、以及经由此外部介电层中的开口所曝露之接触垫。
此等开口可以藉由将焊料遮罩涂布至基板,且去除未遮蔽之介电材料以曝露接触垫而形成。在步骤1006,此接触垫可以经由开口以由锡与铜共晶之所构成之覆盖层而覆盖。此预焊料垫(图8,810)可以藉由首先涂布加工表面且然后在接触垫上之开口中印刷焊料浆而形成。
在步骤1008,将半导体晶片之无铅焊料凸块与中间基板之经覆盖接触垫对齐。在步骤1010,将无铅焊料凸块与覆盖层回流焊接。
以上一或更多个实施例可以应用至各种覆晶结构。基于在此所揭示发明之说明书与实施,其他观点与实施例对于熟习此技术人士为明显;其用意为此说明书与所说明实施例被认为仅为范例而已。本发明之真正精神与范围由以下权利要求书所显示。
Claims (15)
1.一种半导体元件,其包括:
半导体晶片;
多个无铅焊料凸块,其设置在该半导体晶片之表面上;
基板,其包括多个金属层与多个介电层,其中该多个金属层之一者包含多个接触垫,以对应于该多个无铅焊料凸块,且该多个介电层之一者为外部介电层,其具有多个相应开口,用于该多个接触垫;
多个相应铜柱,其设置在该多个接触垫上,其中用于各接触垫之该相应铜柱从该接触垫经由用于该接触垫之该相应开口而延伸;以及
其中该半导体晶片安装于该基板上而具有在该多个无铅焊料凸块与该多个铜柱间之连接。
2.如权利要求第1项之半导体元件,其中该多个无铅焊料凸块包含锡与银,该多个接触垫为铜,以及该外部介电层为环氧树脂复合物,其粘着于该多个接触垫周围之该多个接触垫。
3.如权利要求第1或2项之半导体元件,其中:
各接触垫之该相应铜柱具有远离该接触垫之终端盖,以及在该接触垫与该终端盖之间之一部份;以及
该终端盖之宽度大于该部份之宽度。
4.如权利要求第3项之半导体元件,其中该部份之高度大于该终端盖之高度。
5.如权利要求第1到4项中任一项之半导体元件,其中用于各接触垫之该相应铜柱经由该相应开口而延伸,且超过该外部介电层之厚度,且超过用于该接触垫之该相应开口之宽度。
6.如权利要求第1到4项中任一项之半导体元件,其中用于各接触垫之该相应铜柱经由该相应开口而延伸超过该外部介电层之厚度。
7.如权利要求第1到4项中任一项之半导体元件,其中:
用于各接触垫之该相应开口为圆柱形开口,其所具有之高度等于该外部介电层之厚度,且具有在该接触垫周围内之直径;以及
用于该接触垫之该相应铜柱从该接触垫经由该相应开口而延伸,且超过该相应开口之该高度与该直径。
8.如权利要求第1到7项中任一项之半导体元件,其中各该多个无铅焊料凸块回流焊接至对应于该无铅焊料凸块之该接触垫上之该相应铜柱。
9.如权利要求第1到7项中任一项之半导体元件,更包括多个无铅焊球,其分别回流焊接至以格栅配置之该多个相应铜柱,用于各接触垫之该相应铜柱经由该基板之该多个金属层以电性耦接至该接触垫所对应之无铅焊料凸块。
10.如权利要求第1到7项中任一项之半导体元件,更包括在该多个相应铜柱上之锡与铜之覆盖层,其中各该多个无铅焊料凸块与在该相应铜柱上之该覆盖层一起回流焊接至对应于该无铅焊料凸块之该接触垫上之该相应铜柱上。
11.一种半导体元件之制造方法,其包括以下步骤:
形成半导体晶片,其具有多个无铅焊料凸块以用于连接至基板;
形成基板,其包括外部介电层与多个接触垫,该多个接触垫经由在该外部介电层中多个相应开口而曝露;
在该多个接触垫上形成多个相应铜柱,其中用于各接触垫之该相应铜柱从该接触垫经由用于该接触垫之该相应开口而延伸;
将该半导体晶片之该多个无铅焊料凸块对齐于在该基板之该多个接触垫上之该多个相应铜柱;以及
将该多个无铅焊料凸块回流焊接至该多个相应铜柱。
12.如权利要求第11项之方法,其中形成用于各接触垫之该相应铜柱包括形成该相应铜柱,其具有远离该接触垫之终端盖且具有在该接触垫与该终端盖之间之一部份,该终端盖之宽度大于该铜柱在该接触垫与该终端盖之间的该部份之宽度。
13.如权利要求第12项之方法,其中形成用于该接触垫之该相应铜柱包括将在该接触垫与该终端盖之间的该相应铜柱之该部份形成至厚度大于该终端盖之厚度。
14.如权利要求第13项之方法,其中:
该形成该半导体晶片包括:形成该半导体晶片,其具有在该多个无焊料凸块之多个相应硅金属垫;以及
该回流焊接包括将各无铅焊料凸块回流焊接至该相应硅金属垫之第一区域,以及至该相应铜柱之第二区域,该第一区域与该第二区域之尺寸相等且各尺寸超过经由该相应铜柱在该接触垫与该终端盖之间的该部份之横截面面积。
15.如权利要求第11至14项中任一项之方法,更包括以锡与铜共晶覆盖该多个相应铜柱,其中该回流焊接包括将各该多个相应无铅厚度焊料凸块、与在该相应铜柱上之该覆盖层回流焊接至对应于该无铅焊料凸块之该接触垫上之该相应铜柱上。
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