CN103261473B - 溅射靶及其制造方法 - Google Patents

溅射靶及其制造方法 Download PDF

Info

Publication number
CN103261473B
CN103261473B CN201280003518.XA CN201280003518A CN103261473B CN 103261473 B CN103261473 B CN 103261473B CN 201280003518 A CN201280003518 A CN 201280003518A CN 103261473 B CN103261473 B CN 103261473B
Authority
CN
China
Prior art keywords
powder
sputtering target
alloy
raw material
material powder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201280003518.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN103261473A (zh
Inventor
张守斌
小路雅弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Solar Frontier KK
Original Assignee
Showa Shell Sekiyu KK
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Shell Sekiyu KK, Mitsubishi Materials Corp filed Critical Showa Shell Sekiyu KK
Publication of CN103261473A publication Critical patent/CN103261473A/zh
Application granted granted Critical
Publication of CN103261473B publication Critical patent/CN103261473B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Powder Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)
CN201280003518.XA 2011-04-22 2012-04-20 溅射靶及其制造方法 Expired - Fee Related CN103261473B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011096591A JP5153911B2 (ja) 2011-04-22 2011-04-22 スパッタリングターゲット及びその製造方法
JP2011-096591 2011-04-22
PCT/JP2012/061301 WO2012144655A1 (ja) 2011-04-22 2012-04-20 スパッタリングターゲット及びその製造方法

Publications (2)

Publication Number Publication Date
CN103261473A CN103261473A (zh) 2013-08-21
CN103261473B true CN103261473B (zh) 2016-01-20

Family

ID=47041745

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280003518.XA Expired - Fee Related CN103261473B (zh) 2011-04-22 2012-04-20 溅射靶及其制造方法

Country Status (7)

Country Link
US (1) US9528181B2 (enExample)
EP (1) EP2700735B1 (enExample)
JP (1) JP5153911B2 (enExample)
KR (1) KR101358345B1 (enExample)
CN (1) CN103261473B (enExample)
TW (1) TWI438296B (enExample)
WO (1) WO2012144655A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9822430B2 (en) 2012-02-29 2017-11-21 The United States Of America As Represented By The Secretary Of The Army High-density thermodynamically stable nanostructured copper-based bulk metallic systems, and methods of making the same
JP6176535B2 (ja) * 2013-02-25 2017-08-09 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
JP5594618B1 (ja) * 2013-02-25 2014-09-24 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
WO2015042622A1 (de) * 2013-09-27 2015-04-02 Plansee Se Kupfer-gallium sputtering target
CN108772567A (zh) * 2018-06-29 2018-11-09 米亚索乐装备集成（福建）有限公司 一种用于cig靶材打底层的合金材料、cig靶材及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101068947A (zh) * 2004-11-30 2007-11-07 日矿金属株式会社 Sb－Te系合金烧结体溅射靶
US20100116341A1 (en) * 2008-11-12 2010-05-13 Solar Applied Materials Technology Corp. Copper-gallium allay sputtering target, method for fabricating the same and related applications
JP2010265544A (ja) * 2009-04-14 2010-11-25 Kobelco Kaken:Kk Ｃｕ−Ｇａ合金スパッタリングターゲットおよびその製造方法
CN101906552A (zh) * 2009-06-04 2010-12-08 日立电线株式会社 Cu-Ga合金、溅射靶、Cu-Ga合金的制造方法以及溅射靶的制造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1157652A (en) 1966-06-15 1969-07-09 Ass Elect Ind Hardened Copper-Bismuth Base Alloys
JP3249408B2 (ja) 1996-10-25 2002-01-21 昭和シェル石油株式会社 薄膜太陽電池の薄膜光吸収層の製造方法及び製造装置
JP2002064062A (ja) * 2000-08-17 2002-02-28 Honda Motor Co Ltd 化合物半導体の成膜方法
JP4582457B2 (ja) 2003-07-15 2010-11-17 Ｊｘ日鉱日石金属株式会社 スパッタリングターゲット及び光記録媒体
JP2006351142A (ja) * 2005-06-20 2006-12-28 Sony Corp 光記録媒体およびその製造方法ならびにスパッタリングターゲット
US9279178B2 (en) 2007-04-27 2016-03-08 Honeywell International Inc. Manufacturing design and processing methods and apparatus for sputtering targets
JP5192990B2 (ja) * 2008-11-11 2013-05-08 光洋應用材料科技股▲分▼有限公司 銅−ガリウム合金スパッタリングターゲット及びそのスパッタリングターゲットの製造方法並びに関連用途
JP4793504B2 (ja) * 2009-11-06 2011-10-12 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101068947A (zh) * 2004-11-30 2007-11-07 日矿金属株式会社 Sb－Te系合金烧结体溅射靶
US20100116341A1 (en) * 2008-11-12 2010-05-13 Solar Applied Materials Technology Corp. Copper-gallium allay sputtering target, method for fabricating the same and related applications
JP2010265544A (ja) * 2009-04-14 2010-11-25 Kobelco Kaken:Kk Ｃｕ−Ｇａ合金スパッタリングターゲットおよびその製造方法
CN101906552A (zh) * 2009-06-04 2010-12-08 日立电线株式会社 Cu-Ga合金、溅射靶、Cu-Ga合金的制造方法以及溅射靶的制造方法

Also Published As

Publication number Publication date
EP2700735A4 (en) 2014-10-01
WO2012144655A1 (ja) 2012-10-26
KR20130059458A (ko) 2013-06-05
US9528181B2 (en) 2016-12-27
CN103261473A (zh) 2013-08-21
EP2700735B1 (en) 2016-08-17
US20140048414A1 (en) 2014-02-20
TW201307593A (zh) 2013-02-16
TWI438296B (zh) 2014-05-21
KR101358345B1 (ko) 2014-02-06
EP2700735A1 (en) 2014-02-26
JP2012229454A (ja) 2012-11-22
JP5153911B2 (ja) 2013-02-27

Similar Documents

Publication Publication Date Title
CN103261472B (zh) 溅射靶及其制造方法
CN102753721B (zh) 溅射靶及其制造方法
JP5818139B2 (ja) Ｃｕ−Ｇａ合金ターゲット材およびその製造方法
WO2012147985A1 (ja) スパッタリングターゲット及びその製造方法
CN102395702A (zh) 溅射靶及其制造方法
JP5740988B2 (ja) Ｃｕ−Ｇａ合金粉末及びＣｕ−Ｇａ合金スパッタリングターゲット
JP5594618B1 (ja) スパッタリングターゲット及びその製造方法
EP2589571A1 (en) Powder, sintered body and sputtering target, each containing elements cu, in, ga and se, and method for producing the powder
CN103261473B (zh) 溅射靶及其制造方法
JP6176535B2 (ja) スパッタリングターゲット及びその製造方法
JP2014210943A (ja) Ｃｕ−Ｇａ合金ターゲット材およびその製造方法
JP2017095781A (ja) Ｃｕ−Ｇａ合金スパッタリングターゲットおよびその製造方法
JP5488377B2 (ja) Ｃｕ−Ｇａ合金スパッタリングターゲットの製造方法及びＣｕ−Ｇａ合金スパッタリングターゲット
JP2015059246A (ja) Ｃｕ−Ｇａ合金ターゲット材

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: SOLAR FRONTIER K. K.

Free format text: FORMER OWNER: SHOWA SHELL SEKIYU K.K.

Effective date: 20150104

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20150104

Address after: Tokyo, Japan

Applicant after: MITSUBISHI MATERIALS Corp.

Applicant after: Solar Frontier Kabushiki Kaisha

Address before: Tokyo, Japan

Applicant before: Mitsubishi Materials Corp.

Applicant before: SHOWA SHELL SEKIYU Kabushiki Kaisha

C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160120