KR101358345B1 - 스퍼터링 타겟 및 그 제조방법 - Google Patents

스퍼터링 타겟 및 그 제조방법 Download PDF

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Publication number
KR101358345B1
KR101358345B1 KR1020137011164A KR20137011164A KR101358345B1 KR 101358345 B1 KR101358345 B1 KR 101358345B1 KR 1020137011164 A KR1020137011164 A KR 1020137011164A KR 20137011164 A KR20137011164 A KR 20137011164A KR 101358345 B1 KR101358345 B1 KR 101358345B1
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KR
South Korea
Prior art keywords
powder
sputtering target
alloy
raw material
exist
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Expired - Fee Related
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KR1020137011164A
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English (en)
Korean (ko)
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KR20130059458A (ko
Inventor
쇼우빈 장
마사히로 쇼지
Original Assignee
쇼와쉘세키유가부시키가이샤
미츠비시 마테리알 가부시키가이샤
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Publication of KR20130059458A publication Critical patent/KR20130059458A/ko
Application granted granted Critical
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Powder Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)
KR1020137011164A 2011-04-22 2012-04-20 스퍼터링 타겟 및 그 제조방법 Expired - Fee Related KR101358345B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011096591A JP5153911B2 (ja) 2011-04-22 2011-04-22 スパッタリングターゲット及びその製造方法
JPJP-P-2011-096591 2011-04-22
PCT/JP2012/061301 WO2012144655A1 (ja) 2011-04-22 2012-04-20 スパッタリングターゲット及びその製造方法

Publications (2)

Publication Number Publication Date
KR20130059458A KR20130059458A (ko) 2013-06-05
KR101358345B1 true KR101358345B1 (ko) 2014-02-06

Family

ID=47041745

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137011164A Expired - Fee Related KR101358345B1 (ko) 2011-04-22 2012-04-20 스퍼터링 타겟 및 그 제조방법

Country Status (7)

Country Link
US (1) US9528181B2 (enExample)
EP (1) EP2700735B1 (enExample)
JP (1) JP5153911B2 (enExample)
KR (1) KR101358345B1 (enExample)
CN (1) CN103261473B (enExample)
TW (1) TWI438296B (enExample)
WO (1) WO2012144655A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9822430B2 (en) 2012-02-29 2017-11-21 The United States Of America As Represented By The Secretary Of The Army High-density thermodynamically stable nanostructured copper-based bulk metallic systems, and methods of making the same
JP6176535B2 (ja) * 2013-02-25 2017-08-09 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
JP5594618B1 (ja) * 2013-02-25 2014-09-24 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
WO2015042622A1 (de) * 2013-09-27 2015-04-02 Plansee Se Kupfer-gallium sputtering target
CN108772567A (zh) * 2018-06-29 2018-11-09 米亚索乐装备集成（福建）有限公司 一种用于cig靶材打底层的合金材料、cig靶材及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010116580A (ja) 2008-11-11 2010-05-27 Solar Applied Materials Technology Corp 銅−ガリウム合金スパッタリングターゲット及びそのスパッタリングターゲットの製造方法並びに関連用途
JP2010265544A (ja) 2009-04-14 2010-11-25 Kobelco Kaken:Kk Ｃｕ−Ｇａ合金スパッタリングターゲットおよびその製造方法
JP2010280944A (ja) 2009-06-04 2010-12-16 Hitachi Cable Ltd Ｃｕ−Ｇａ合金、スパッタリングターゲット、Ｃｕ−Ｇａ合金の製造方法、スパッタリングターゲットの製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1157652A (en) 1966-06-15 1969-07-09 Ass Elect Ind Hardened Copper-Bismuth Base Alloys
JP3249408B2 (ja) 1996-10-25 2002-01-21 昭和シェル石油株式会社 薄膜太陽電池の薄膜光吸収層の製造方法及び製造装置
JP2002064062A (ja) * 2000-08-17 2002-02-28 Honda Motor Co Ltd 化合物半導体の成膜方法
JP4582457B2 (ja) 2003-07-15 2010-11-17 Ｊｘ日鉱日石金属株式会社 スパッタリングターゲット及び光記録媒体
CN101068947A (zh) * 2004-11-30 2007-11-07 日矿金属株式会社 Sb－Te系合金烧结体溅射靶
JP2006351142A (ja) * 2005-06-20 2006-12-28 Sony Corp 光記録媒体およびその製造方法ならびにスパッタリングターゲット
US9279178B2 (en) 2007-04-27 2016-03-08 Honeywell International Inc. Manufacturing design and processing methods and apparatus for sputtering targets
US20100116341A1 (en) * 2008-11-12 2010-05-13 Solar Applied Materials Technology Corp. Copper-gallium allay sputtering target, method for fabricating the same and related applications
JP4793504B2 (ja) * 2009-11-06 2011-10-12 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010116580A (ja) 2008-11-11 2010-05-27 Solar Applied Materials Technology Corp 銅−ガリウム合金スパッタリングターゲット及びそのスパッタリングターゲットの製造方法並びに関連用途
JP2010265544A (ja) 2009-04-14 2010-11-25 Kobelco Kaken:Kk Ｃｕ−Ｇａ合金スパッタリングターゲットおよびその製造方法
JP2010280944A (ja) 2009-06-04 2010-12-16 Hitachi Cable Ltd Ｃｕ−Ｇａ合金、スパッタリングターゲット、Ｃｕ−Ｇａ合金の製造方法、スパッタリングターゲットの製造方法

Also Published As

Publication number Publication date
EP2700735A4 (en) 2014-10-01
WO2012144655A1 (ja) 2012-10-26
KR20130059458A (ko) 2013-06-05
US9528181B2 (en) 2016-12-27
CN103261473A (zh) 2013-08-21
EP2700735B1 (en) 2016-08-17
US20140048414A1 (en) 2014-02-20
TW201307593A (zh) 2013-02-16
CN103261473B (zh) 2016-01-20
TWI438296B (zh) 2014-05-21
EP2700735A1 (en) 2014-02-26
JP2012229454A (ja) 2012-11-22
JP5153911B2 (ja) 2013-02-27

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