CN103222056A - 双极非穿通功率半导体装置 - Google Patents
双极非穿通功率半导体装置 Download PDFInfo
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- CN103222056A CN103222056A CN2011800569619A CN201180056961A CN103222056A CN 103222056 A CN103222056 A CN 103222056A CN 2011800569619 A CN2011800569619 A CN 2011800569619A CN 201180056961 A CN201180056961 A CN 201180056961A CN 103222056 A CN103222056 A CN 103222056A
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- Physics & Mathematics (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
1 | 相控晶闸管 | 1’ | 二极管 |
10 | 现有技术PCT | 2 | 晶片 |
22 | 内区 | 23 | 晶片厚度 |
24 | 终止区 | 26 | 漂移层 |
3 | 阴极接触 | 31 | 阴极侧 |
4 | 阳极接触 | 41 | 阳极侧 |
5 | 基极层 | 51 | 基极层深度 |
52 | 基极层厚度 | 53 | 负斜角 |
54 | 第一终止层 | 55 | 第一终止层深度 |
56 | 第一终止层厚度 | 57 | 第一掩模 |
58 | 第一边缘层 | 59 | 第一边缘层深度 |
50 | 第一边缘层厚度 | 6 | 阳极层 |
61 | 阳极层深度 | 62 | 阳极层厚度 |
64 | 第二终止层 | 65 | 第二终止层深度 |
66 | 第二终止层厚度 | 67 | 第二掩模 |
68 | 第二边缘层 | 69 | 第二边缘层深度 |
60 | 第二边缘层厚度 | 7 | 阴极层 |
71 | 阴极层深度 | 8 | 阴极短区 |
81 | 阴极短区深度 | 9 | 护环 |
91 | 护环深度 | 95 | 栅极接触 |
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP10180161.1 | 2010-09-27 | ||
EP10180161 | 2010-09-27 | ||
PCT/EP2011/066740 WO2012041836A1 (en) | 2010-09-27 | 2011-09-27 | Bipolar non-punch-through power semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103222056A true CN103222056A (zh) | 2013-07-24 |
CN103222056B CN103222056B (zh) | 2016-08-10 |
Family
ID=44454540
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180056961.9A Active CN103222056B (zh) | 2010-09-27 | 2011-09-27 | 双极非穿通功率半导体装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8803192B2 (zh) |
JP (1) | JP6026418B2 (zh) |
KR (1) | KR101745437B1 (zh) |
CN (1) | CN103222056B (zh) |
DE (1) | DE112011103230B4 (zh) |
GB (1) | GB2497245B (zh) |
WO (1) | WO2012041836A1 (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105474400A (zh) * | 2013-08-28 | 2016-04-06 | Abb技术有限公司 | 双极非穿通功率半导体装置 |
CN107078154A (zh) * | 2014-07-31 | 2017-08-18 | Abb瑞士股份有限公司 | 相控晶闸管 |
CN109103242A (zh) * | 2018-09-30 | 2018-12-28 | 江苏明芯微电子股份有限公司 | 一种穿通结构的可控硅芯片及其生产方法 |
CN111755501A (zh) * | 2020-06-18 | 2020-10-09 | 清华大学 | 一种具有边缘深结结构的晶圆芯片结构 |
CN112310226A (zh) * | 2019-07-29 | 2021-02-02 | 珠海格力电器股份有限公司 | 快恢复二极管及其制备方法 |
CN113161347A (zh) * | 2021-06-02 | 2021-07-23 | 江苏韦达半导体有限公司 | 低电容低残压大功率过压保护器件芯片及其制作工艺 |
CN116504825A (zh) * | 2023-06-27 | 2023-07-28 | 清华大学 | 功率半导体器件及其制作方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2850660A1 (en) * | 2012-05-17 | 2015-03-25 | General Electric Company | Semiconductor device with junction termination extension |
JP6028864B2 (ja) * | 2013-07-08 | 2016-11-24 | 三菱電機株式会社 | 半導体装置 |
US10283595B2 (en) * | 2015-04-10 | 2019-05-07 | Panasonic Corporation | Silicon carbide semiconductor substrate used to form semiconductor epitaxial layer thereon |
EP4006990B1 (en) * | 2020-11-27 | 2023-04-05 | Hitachi Energy Switzerland AG | Semiconductor device with a side surface having different partial regions |
EP4439633A1 (en) * | 2023-03-31 | 2024-10-02 | Hitachi Energy Ltd | Power semiconductor device and method for producing a power semiconductor device |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3231796A (en) * | 1960-12-20 | 1966-01-25 | Merck & Co Inc | Pnpn semiconductor switch with predetermined forward breakover and reverse breakdownvoltages |
US5710442A (en) * | 1995-02-03 | 1998-01-20 | Hitachi, Ltd. | Semiconductor device and method of manufacturing same |
US20030038333A1 (en) * | 2001-08-22 | 2003-02-27 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
JP2004014922A (ja) * | 2002-06-10 | 2004-01-15 | Nippon Telegr & Teleph Corp <Ntt> | ヘテロ接合バイポーラトランジスタ |
US20050258448A1 (en) * | 2002-10-30 | 2005-11-24 | Reiner Barthelmess | Thyristor component with improved blocking capabilities in the reverse direction |
WO2007036456A2 (de) * | 2005-09-29 | 2007-04-05 | Siced Electronics Development Gmbh & Co. Kg | Sic-pn-leistungsdiode |
US7304363B1 (en) * | 2004-11-26 | 2007-12-04 | United States Of America As Represented By The Secretary Of The Army | Interacting current spreader and junction extender to increase the voltage blocked in the off state of a high power semiconductor device |
US20090194790A1 (en) * | 2008-01-11 | 2009-08-06 | Yoshihiro Sato | Field effect transister and process for producing the same |
CN101752248A (zh) * | 2009-12-18 | 2010-06-23 | 浙江四方电子有限公司 | 晶闸管管芯制造工艺 |
CN201562681U (zh) * | 2009-11-27 | 2010-08-25 | 西安电力电子技术研究所 | 正反向对称类台面负角造型晶闸管结终端 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4079403A (en) | 1976-11-01 | 1978-03-14 | Electric Power Research Institute, Inc. | Thyristor device with self-protection against breakover turn-on failure |
DE3867371D1 (en) | 1987-08-11 | 1992-02-13 | Bbc Brown Boveri & Cie | Gate-turn-off-thyristor. |
JP3321185B2 (ja) | 1990-09-28 | 2002-09-03 | 株式会社東芝 | 高耐圧半導体装置 |
DE59203207D1 (de) * | 1991-09-20 | 1995-09-14 | Eupec Gmbh & Co Kg | Thyristor mit Randstruktur. |
DE10358985B3 (de) | 2003-12-16 | 2005-05-19 | Infineon Technologies Ag | Halbleiterbauelement mit einem pn-Übergang und einer auf einer Oberfläche aufgebrachten Passivierungsschicht |
JP4936670B2 (ja) * | 2005-01-11 | 2012-05-23 | 三菱電機株式会社 | 電力用半導体装置 |
US7728409B2 (en) | 2005-11-10 | 2010-06-01 | Fuji Electric Device Technology Co., Ltd. | Semiconductor device and method of manufacturing the same |
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2011
- 2011-09-27 CN CN201180056961.9A patent/CN103222056B/zh active Active
- 2011-09-27 JP JP2013530696A patent/JP6026418B2/ja active Active
- 2011-09-27 KR KR1020137007626A patent/KR101745437B1/ko active IP Right Grant
- 2011-09-27 WO PCT/EP2011/066740 patent/WO2012041836A1/en active Application Filing
- 2011-09-27 DE DE112011103230.7T patent/DE112011103230B4/de active Active
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Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3231796A (en) * | 1960-12-20 | 1966-01-25 | Merck & Co Inc | Pnpn semiconductor switch with predetermined forward breakover and reverse breakdownvoltages |
US5710442A (en) * | 1995-02-03 | 1998-01-20 | Hitachi, Ltd. | Semiconductor device and method of manufacturing same |
US20030038333A1 (en) * | 2001-08-22 | 2003-02-27 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
JP2004014922A (ja) * | 2002-06-10 | 2004-01-15 | Nippon Telegr & Teleph Corp <Ntt> | ヘテロ接合バイポーラトランジスタ |
US20050258448A1 (en) * | 2002-10-30 | 2005-11-24 | Reiner Barthelmess | Thyristor component with improved blocking capabilities in the reverse direction |
US7304363B1 (en) * | 2004-11-26 | 2007-12-04 | United States Of America As Represented By The Secretary Of The Army | Interacting current spreader and junction extender to increase the voltage blocked in the off state of a high power semiconductor device |
WO2007036456A2 (de) * | 2005-09-29 | 2007-04-05 | Siced Electronics Development Gmbh & Co. Kg | Sic-pn-leistungsdiode |
US20090194790A1 (en) * | 2008-01-11 | 2009-08-06 | Yoshihiro Sato | Field effect transister and process for producing the same |
CN201562681U (zh) * | 2009-11-27 | 2010-08-25 | 西安电力电子技术研究所 | 正反向对称类台面负角造型晶闸管结终端 |
CN101752248A (zh) * | 2009-12-18 | 2010-06-23 | 浙江四方电子有限公司 | 晶闸管管芯制造工艺 |
Non-Patent Citations (1)
Title |
---|
TORU HIYOSHI ET.AL: ""Simulation and Experimental Study on the Junction Termination Structure for High-Voltage 4H-SiC PiN Diodes"", 《IEE TRANSACTIONS ON ELECTRON DEVICES》, 1 August 2008 (2008-08-01), pages 1841 - 1846, XP011231845, DOI: doi:10.1109/TED.2008.926643 * |
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CN105474400A (zh) * | 2013-08-28 | 2016-04-06 | Abb技术有限公司 | 双极非穿通功率半导体装置 |
CN107078154A (zh) * | 2014-07-31 | 2017-08-18 | Abb瑞士股份有限公司 | 相控晶闸管 |
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CN109103242A (zh) * | 2018-09-30 | 2018-12-28 | 江苏明芯微电子股份有限公司 | 一种穿通结构的可控硅芯片及其生产方法 |
CN109103242B (zh) * | 2018-09-30 | 2023-12-15 | 江苏明芯微电子股份有限公司 | 一种穿通结构的可控硅芯片及其生产方法 |
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CN113161347B (zh) * | 2021-06-02 | 2023-09-08 | 江苏韦达半导体有限公司 | 低电容低残压大功率过压保护器件芯片及其制作工艺 |
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Also Published As
Publication number | Publication date |
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WO2012041836A1 (en) | 2012-04-05 |
GB201305363D0 (en) | 2013-05-08 |
JP2013542597A (ja) | 2013-11-21 |
GB2497245A (en) | 2013-06-05 |
JP6026418B2 (ja) | 2016-11-16 |
KR20130118306A (ko) | 2013-10-29 |
DE112011103230B4 (de) | 2021-11-25 |
GB2497245B (en) | 2015-04-01 |
US20130207159A1 (en) | 2013-08-15 |
CN103222056B (zh) | 2016-08-10 |
US8803192B2 (en) | 2014-08-12 |
DE112011103230T5 (de) | 2013-08-01 |
KR101745437B1 (ko) | 2017-06-09 |
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