CN103222035B - 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 - Google Patents

悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 Download PDF

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Publication number
CN103222035B
CN103222035B CN201180055796.5A CN201180055796A CN103222035B CN 103222035 B CN103222035 B CN 103222035B CN 201180055796 A CN201180055796 A CN 201180055796A CN 103222035 B CN103222035 B CN 103222035B
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China
Prior art keywords
abrasive particle
recorded
mass
content
aqueous dispersions
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Chinese (zh)
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CN103222035A (zh
Inventor
岩野友洋
成田武宪
龙崎大介
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Resonac Corp
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Hitachi Chemical Co Ltd
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Priority to CN201310335723.2A priority Critical patent/CN103497733B/zh
Priority to CN201310335499.7A priority patent/CN103497732B/zh
Publication of CN103222035A publication Critical patent/CN103222035A/zh
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/12—Etching, surface-brightening or pickling compositions containing heavy metal salts in an amount of at least 50% of the non-solvent components
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CN201180055796.5A 2010-11-22 2011-11-21 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 Active CN103222035B (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201310335723.2A CN103497733B (zh) 2010-11-22 2011-11-21 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板
CN201310335499.7A CN103497732B (zh) 2010-11-22 2011-11-21 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010-260036 2010-11-22
JP2010260036 2010-11-22
PCT/JP2011/076822 WO2012070541A1 (ja) 2010-11-22 2011-11-21 スラリー、研磨液セット、研磨液、基板の研磨方法及び基板

Related Child Applications (3)

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CN201310335599.XA Division CN103500706A (zh) 2010-11-22 2011-11-21 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板
CN201310335499.7A Division CN103497732B (zh) 2010-11-22 2011-11-21 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板
CN201310335723.2A Division CN103497733B (zh) 2010-11-22 2011-11-21 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板

Publications (2)

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CN103222035A CN103222035A (zh) 2013-07-24
CN103222035B true CN103222035B (zh) 2016-09-21

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CN201180055796.5A Active CN103222035B (zh) 2010-11-22 2011-11-21 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板
CN201310335499.7A Active CN103497732B (zh) 2010-11-22 2011-11-21 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板
CN201310335599.XA Pending CN103500706A (zh) 2010-11-22 2011-11-21 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板
CN201310335723.2A Active CN103497733B (zh) 2010-11-22 2011-11-21 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板

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CN201310335599.XA Pending CN103500706A (zh) 2010-11-22 2011-11-21 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板
CN201310335723.2A Active CN103497733B (zh) 2010-11-22 2011-11-21 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板

Country Status (7)

Country Link
US (5) US9988573B2 (https=)
JP (4) JP5590144B2 (https=)
KR (4) KR101886895B1 (https=)
CN (4) CN103222035B (https=)
SG (1) SG190054A1 (https=)
TW (4) TW201323591A (https=)
WO (1) WO2012070541A1 (https=)

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WO2018179061A1 (ja) 2017-03-27 2018-10-04 日立化成株式会社 研磨液、研磨液セット及び研磨方法
WO2019043819A1 (ja) 2017-08-30 2019-03-07 日立化成株式会社 スラリ及び研磨方法
WO2019181016A1 (ja) 2018-03-22 2019-09-26 日立化成株式会社 研磨液、研磨液セット及び研磨方法
WO2020021680A1 (ja) * 2018-07-26 2020-01-30 日立化成株式会社 スラリ及び研磨方法
WO2020065723A1 (ja) 2018-09-25 2020-04-02 日立化成株式会社 スラリ及び研磨方法
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