CN103138032B - 双工器 - Google Patents
双工器 Download PDFInfo
- Publication number
- CN103138032B CN103138032B CN201210479096.5A CN201210479096A CN103138032B CN 103138032 B CN103138032 B CN 103138032B CN 201210479096 A CN201210479096 A CN 201210479096A CN 103138032 B CN103138032 B CN 103138032B
- Authority
- CN
- China
- Prior art keywords
- resonator
- temperature
- compensating
- film
- filter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims abstract description 43
- 239000010409 thin film Substances 0.000 claims abstract description 40
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 32
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 7
- 239000010980 sapphire Substances 0.000 claims abstract description 7
- 239000010408 film Substances 0.000 claims description 113
- 239000012528 membrane Substances 0.000 claims description 48
- 238000009434 installation Methods 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 238000001556 precipitation Methods 0.000 claims 1
- 238000010897 surface acoustic wave method Methods 0.000 description 41
- 239000010410 layer Substances 0.000 description 24
- 239000011651 chromium Substances 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 239000013589 supplement Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 10
- 238000005530 etching Methods 0.000 description 10
- 238000002372 labelling Methods 0.000 description 8
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910017083 AlN Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000000411 inducer Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000010948 rhodium Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910012463 LiTaO3 Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910003781 PbTiO3 Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/542—Filters comprising resonators of piezoelectric or electrostrictive material including passive elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/60—Electric coupling means therefor
- H03H9/605—Electric coupling means therefor consisting of a ladder configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/6483—Ladder SAW filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/703—Networks using bulk acoustic wave devices
- H03H9/706—Duplexers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
- H03H9/725—Duplexers
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011-255545 | 2011-11-22 | ||
| JP2011255545A JP5877043B2 (ja) | 2011-11-22 | 2011-11-22 | デュプレクサ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103138032A CN103138032A (zh) | 2013-06-05 |
| CN103138032B true CN103138032B (zh) | 2016-06-22 |
Family
ID=48426207
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210479096.5A Active CN103138032B (zh) | 2011-11-22 | 2012-11-22 | 双工器 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9240768B2 (enExample) |
| JP (1) | JP5877043B2 (enExample) |
| CN (1) | CN103138032B (enExample) |
Families Citing this family (99)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG11201600283XA (en) * | 2013-08-21 | 2016-02-26 | Murata Manufacturing Co | Piezoelectric resonator and method for manufacturing the same |
| JP5765501B1 (ja) * | 2013-09-17 | 2015-08-19 | 株式会社村田製作所 | デュプレクサ |
| JP6374653B2 (ja) | 2013-11-18 | 2018-08-15 | 太陽誘電株式会社 | 弾性波フィルタ及び分波器 |
| DE102014109264B4 (de) * | 2014-07-02 | 2017-11-16 | Snaptrack, Inc. | Resonatorschaltung mit erweiterten Freiheitsgraden, Filter mit verbesserter Abstimmbarkeit und Duplexer mit verbesserter Abstimmbarkeit |
| JP6400970B2 (ja) * | 2014-07-25 | 2018-10-03 | 太陽誘電株式会社 | フィルタおよびデュプレクサ |
| JP6233527B2 (ja) * | 2014-10-06 | 2017-11-22 | 株式会社村田製作所 | ラダー型フィルタ及びデュプレクサ |
| JP6332101B2 (ja) | 2015-03-26 | 2018-05-30 | 株式会社村田製作所 | 弾性表面波フィルタ |
| JP6494545B2 (ja) * | 2016-02-23 | 2019-04-03 | 太陽誘電株式会社 | デュプレクサ |
| JP6534366B2 (ja) | 2016-06-07 | 2019-06-26 | 太陽誘電株式会社 | 弾性波デバイス |
| JP6886264B2 (ja) * | 2016-09-21 | 2021-06-16 | 太陽誘電株式会社 | 弾性波デバイス並びに複合基板およびその製造方法 |
| US10367475B2 (en) | 2016-10-28 | 2019-07-30 | Skyworks Solutions, Inc. | Acoustic wave filter including surface acoustic wave resonators and bulk acoustic wave resonator |
| JP6534406B2 (ja) * | 2017-03-21 | 2019-06-26 | 太陽誘電株式会社 | マルチプレクサ |
| WO2019138811A1 (ja) * | 2018-01-12 | 2019-07-18 | 株式会社村田製作所 | 弾性波装置、マルチプレクサ、高周波フロントエンド回路、及び通信装置 |
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| US10601392B2 (en) | 2018-06-15 | 2020-03-24 | Resonant Inc. | Solidly-mounted transversely-excited film bulk acoustic resonator |
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| US11323090B2 (en) | 2018-06-15 | 2022-05-03 | Resonant Inc. | Transversely-excited film bulk acoustic resonator using Y-X-cut lithium niobate for high power applications |
| US11146232B2 (en) | 2018-06-15 | 2021-10-12 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with reduced spurious modes |
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| US10790802B2 (en) | 2018-06-15 | 2020-09-29 | Resonant Inc. | Transversely excited film bulk acoustic resonator using rotated Y-X cut lithium niobate |
| US11323096B2 (en) | 2018-06-15 | 2022-05-03 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with periodic etched holes |
| SG10201902753RA (en) | 2018-04-12 | 2019-11-28 | Skyworks Solutions Inc | Filter Including Two Types Of Acoustic Wave Resonators |
| DE102018113624A1 (de) * | 2018-06-07 | 2019-12-12 | RF360 Europe GmbH | Elektroakustischer Resonator und HF-Filter, das einen elektroakustischen Resonator umfasst |
| US11996822B2 (en) | 2018-06-15 | 2024-05-28 | Murata Manufacturing Co., Ltd. | Wide bandwidth time division duplex transceiver |
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| US11264966B2 (en) | 2018-06-15 | 2022-03-01 | Resonant Inc. | Solidly-mounted transversely-excited film bulk acoustic resonator with diamond layers in Bragg reflector stack |
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| US11329628B2 (en) | 2020-06-17 | 2022-05-10 | Resonant Inc. | Filter using lithium niobate and lithium tantalate transversely-excited film bulk acoustic resonators |
| US11916539B2 (en) * | 2020-02-28 | 2024-02-27 | Murata Manufacturing Co., Ltd. | Split-ladder band N77 filter using transversely-excited film bulk acoustic resonators |
| US11967945B2 (en) | 2018-06-15 | 2024-04-23 | Murata Manufacturing Co., Ltd. | Transversly-excited film bulk acoustic resonators and filters |
| US12040781B2 (en) | 2018-06-15 | 2024-07-16 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator package |
| US11146238B2 (en) | 2018-06-15 | 2021-10-12 | Resonant Inc. | Film bulk acoustic resonator fabrication method |
| US12113512B2 (en) | 2021-03-29 | 2024-10-08 | Murata Manufacturing Co., Ltd. | Layout of XBARs with multiple sub-resonators in parallel |
| US11323091B2 (en) | 2018-06-15 | 2022-05-03 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with diaphragm support pedestals |
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| US10998882B2 (en) | 2018-06-15 | 2021-05-04 | Resonant Inc. | XBAR resonators with non-rectangular diaphragms |
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| US11349452B2 (en) | 2018-06-15 | 2022-05-31 | Resonant Inc. | Transversely-excited film bulk acoustic filters with symmetric layout |
| US11901878B2 (en) | 2018-06-15 | 2024-02-13 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonators with two-layer electrodes with a wider top layer |
| US12119805B2 (en) | 2018-06-15 | 2024-10-15 | Murata Manufacturing Co., Ltd. | Substrate processing and membrane release of transversely-excited film bulk acoustic resonator using a sacrificial tub |
| US12224732B2 (en) | 2018-06-15 | 2025-02-11 | Murata Manufacturing Co., Ltd. | Solidly-mounted transversely-excited film bulk acoustic resonators and filters for 27 GHz communications bands |
| US11323095B2 (en) | 2018-06-15 | 2022-05-03 | Resonant Inc. | Rotation in XY plane to suppress spurious modes in XBAR devices |
| US12184261B2 (en) | 2018-06-15 | 2024-12-31 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator with a cavity having round end zones |
| US12009798B2 (en) | 2018-06-15 | 2024-06-11 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonators with electrodes having irregular hexagon cross-sectional shapes |
| US11374549B2 (en) | 2018-06-15 | 2022-06-28 | Resonant Inc. | Filter using transversely-excited film bulk acoustic resonators with divided frequency-setting dielectric layers |
| US10985728B2 (en) | 2018-06-15 | 2021-04-20 | Resonant Inc. | Transversely-excited film bulk acoustic resonator and filter with a uniform-thickness dielectric overlayer |
| US12155371B2 (en) | 2021-03-29 | 2024-11-26 | Murata Manufacturing Co., Ltd. | Layout of xbars with multiple sub-resonators in series |
| US11349450B2 (en) | 2018-06-15 | 2022-05-31 | Resonant Inc. | Symmetric transversely-excited film bulk acoustic resonators with reduced spurious modes |
| US10826462B2 (en) | 2018-06-15 | 2020-11-03 | Resonant Inc. | Transversely-excited film bulk acoustic resonators with molybdenum conductors |
| US12463619B2 (en) | 2018-06-15 | 2025-11-04 | Murata Manufacturing Co., Ltd. | Filter device |
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| US12095441B2 (en) | 2018-06-15 | 2024-09-17 | Murata Manufacturing Co., Ltd. | Transversely excited film bulk acoustic resonator with recessed interdigital transducer fingers |
| US12191838B2 (en) | 2018-06-15 | 2025-01-07 | Murata Manufacturing Co., Ltd. | Solidly-mounted transversely-excited film bulk acoustic device and method |
| US12301212B2 (en) | 2018-06-15 | 2025-05-13 | Murata Manufacturing Co., Ltd. | XBAR resonators with non-rectangular diaphragms |
| US12191837B2 (en) | 2018-06-15 | 2025-01-07 | Murata Manufacturing Co., Ltd. | Solidly-mounted transversely-excited film bulk acoustic device |
| US12021496B2 (en) | 2020-08-31 | 2024-06-25 | Murata Manufacturing Co., Ltd. | Resonators with different membrane thicknesses on the same die |
| US10917072B2 (en) * | 2019-06-24 | 2021-02-09 | Resonant Inc. | Split ladder acoustic wave filters |
| US11909381B2 (en) | 2018-06-15 | 2024-02-20 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonators with two-layer electrodes having a narrower top layer |
| US12155374B2 (en) | 2021-04-02 | 2024-11-26 | Murata Manufacturing Co., Ltd. | Tiled transversely-excited film bulk acoustic resonator high power filters |
| US10797675B2 (en) | 2018-06-15 | 2020-10-06 | Resonant Inc. | Transversely excited film bulk acoustic resonator using rotated z-cut lithium niobate |
| US12132464B2 (en) | 2018-06-15 | 2024-10-29 | Murata Manufacturing Co., Ltd. | Filter using transversely-excited film bulk acoustic resonators with divided frequency-setting dielectric layers |
| US12081187B2 (en) | 2018-06-15 | 2024-09-03 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator |
| US12149227B2 (en) | 2018-06-15 | 2024-11-19 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator package |
| US11996825B2 (en) | 2020-06-17 | 2024-05-28 | Murata Manufacturing Co., Ltd. | Filter using lithium niobate and rotated lithium tantalate transversely-excited film bulk acoustic resonators |
| DE102018132881B4 (de) * | 2018-12-19 | 2020-08-06 | RF360 Europe GmbH | Akustische Filter mit verbesserter Reflektivität |
| JP6822613B2 (ja) * | 2018-12-28 | 2021-01-27 | 株式会社村田製作所 | フィルタ装置およびマルチプレクサ |
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| CN103138032A (zh) | 2013-06-05 |
| JP2013110655A (ja) | 2013-06-06 |
| US9240768B2 (en) | 2016-01-19 |
| JP5877043B2 (ja) | 2016-03-02 |
| US20130127565A1 (en) | 2013-05-23 |
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