CN103120037A - 处理铜表面以增强对印刷电路板中使用的有机衬底的粘着力的方法 - Google Patents
处理铜表面以增强对印刷电路板中使用的有机衬底的粘着力的方法 Download PDFInfo
- Publication number
- CN103120037A CN103120037A CN2010800679277A CN201080067927A CN103120037A CN 103120037 A CN103120037 A CN 103120037A CN 2010800679277 A CN2010800679277 A CN 2010800679277A CN 201080067927 A CN201080067927 A CN 201080067927A CN 103120037 A CN103120037 A CN 103120037A
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- China
- Prior art keywords
- copper
- group
- oxide layer
- oxide
- porphyrin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010949 copper Substances 0.000 title claims abstract description 228
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 171
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 167
- 238000000034 method Methods 0.000 title claims abstract description 107
- 239000000758 substrate Substances 0.000 title claims abstract description 62
- 230000002708 enhancing effect Effects 0.000 title 1
- 229920005989 resin Polymers 0.000 claims abstract description 36
- 239000011347 resin Substances 0.000 claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- -1 permanganate Chemical compound 0.000 claims description 52
- 150000004032 porphyrins Chemical class 0.000 claims description 45
- 150000001875 compounds Chemical class 0.000 claims description 30
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 22
- 229910000085 borane Inorganic materials 0.000 claims description 20
- 230000000694 effects Effects 0.000 claims description 19
- 239000002245 particle Substances 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 15
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 14
- 239000003638 chemical reducing agent Substances 0.000 claims description 14
- 229920000642 polymer Polymers 0.000 claims description 14
- 125000000524 functional group Chemical group 0.000 claims description 13
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 12
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 125000003118 aryl group Chemical group 0.000 claims description 10
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 claims description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 150000001412 amines Chemical class 0.000 claims description 9
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 claims description 8
- 125000000217 alkyl group Chemical group 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 125000005647 linker group Chemical group 0.000 claims description 8
- 239000007800 oxidant agent Substances 0.000 claims description 8
- 230000001590 oxidative effect Effects 0.000 claims description 8
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 6
- 150000002978 peroxides Chemical class 0.000 claims description 6
- 125000001476 phosphono group Chemical group [H]OP(*)(=O)O[H] 0.000 claims description 6
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 6
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 6
- 229920002554 vinyl polymer Polymers 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- 125000003282 alkyl amino group Chemical group 0.000 claims description 5
- 125000005997 bromomethyl group Chemical group 0.000 claims description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 5
- 230000009467 reduction Effects 0.000 claims description 5
- UEXCJVNBTNXOEH-UHFFFAOYSA-N Ethynylbenzene Chemical group C#CC1=CC=CC=C1 UEXCJVNBTNXOEH-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- FNXLCIKXHOPCKH-UHFFFAOYSA-N bromamine Chemical compound BrN FNXLCIKXHOPCKH-UHFFFAOYSA-N 0.000 claims description 4
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 4
- 150000007942 carboxylates Chemical class 0.000 claims description 4
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 4
- 150000002118 epoxides Chemical class 0.000 claims description 4
- 150000002148 esters Chemical class 0.000 claims description 4
- 150000002168 ethanoic acid esters Chemical class 0.000 claims description 4
- ADDQUOLYROTOKS-UHFFFAOYSA-N iodomethanol Chemical compound OCI ADDQUOLYROTOKS-UHFFFAOYSA-N 0.000 claims description 4
- 150000003053 piperidines Chemical class 0.000 claims description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- 239000003153 chemical reaction reagent Substances 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 239000011780 sodium chloride Substances 0.000 claims description 3
- 230000008602 contraction Effects 0.000 claims description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 2
- 230000006641 stabilisation Effects 0.000 claims description 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims 1
- 238000003475 lamination Methods 0.000 abstract description 24
- 238000007788 roughening Methods 0.000 abstract description 19
- 239000000126 substance Substances 0.000 abstract description 13
- 150000003071 polychlorinated biphenyls Chemical class 0.000 abstract 1
- 238000012876 topography Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 44
- 230000008569 process Effects 0.000 description 19
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 238000000576 coating method Methods 0.000 description 16
- 238000012545 processing Methods 0.000 description 16
- 239000002253 acid Substances 0.000 description 15
- 239000011248 coating agent Substances 0.000 description 15
- 238000012360 testing method Methods 0.000 description 14
- 229960004643 cupric oxide Drugs 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 239000000243 solution Substances 0.000 description 12
- 238000011282 treatment Methods 0.000 description 12
- 239000002585 base Substances 0.000 description 11
- 230000003647 oxidation Effects 0.000 description 11
- 238000007254 oxidation reaction Methods 0.000 description 11
- 239000005751 Copper oxide Substances 0.000 description 10
- 229910000431 copper oxide Inorganic materials 0.000 description 10
- 125000004429 atom Chemical group 0.000 description 9
- 229910052799 carbon Inorganic materials 0.000 description 9
- 125000005842 heteroatom Chemical group 0.000 description 9
- 239000003446 ligand Substances 0.000 description 9
- 229910021645 metal ion Inorganic materials 0.000 description 9
- 238000002360 preparation method Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 230000003746 surface roughness Effects 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 6
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 6
- 229940112669 cuprous oxide Drugs 0.000 description 6
- 238000005202 decontamination Methods 0.000 description 6
- 229960002163 hydrogen peroxide Drugs 0.000 description 6
- 239000003112 inhibitor Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 5
- 239000000654 additive Substances 0.000 description 5
- 230000000996 additive effect Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 230000003588 decontaminative effect Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 238000007719 peel strength test Methods 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 150000003233 pyrroles Chemical class 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000005864 Sulphur Substances 0.000 description 4
- 238000003491 array Methods 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 229910001919 chlorite Inorganic materials 0.000 description 4
- 229910052619 chlorite group Inorganic materials 0.000 description 4
- QBWCMBCROVPCKQ-UHFFFAOYSA-N chlorous acid Chemical compound OCl=O QBWCMBCROVPCKQ-UHFFFAOYSA-N 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 238000005868 electrolysis reaction Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 125000002524 organometallic group Chemical group 0.000 description 4
- 229910052723 transition metal Inorganic materials 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 229920000742 Cotton Polymers 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- BHPNXACHQYJJJS-UHFFFAOYSA-N bacteriochlorin Chemical compound N1C(C=C2N=C(C=C3NC(=C4)C=C3)CC2)=CC=C1C=C1CCC4=N1 BHPNXACHQYJJJS-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012044 organic layer Substances 0.000 description 3
- 239000013110 organic ligand Substances 0.000 description 3
- 150000002902 organometallic compounds Chemical class 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 238000010992 reflux Methods 0.000 description 3
- 238000005096 rolling process Methods 0.000 description 3
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 239000012279 sodium borohydride Substances 0.000 description 3
- 229910000033 sodium borohydride Inorganic materials 0.000 description 3
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 description 3
- 235000019345 sodium thiosulphate Nutrition 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 150000003624 transition metals Chemical class 0.000 description 3
- OIXUJRCCNNHWFI-UHFFFAOYSA-N 1,2-dioxane Chemical compound C1CCOOC1 OIXUJRCCNNHWFI-UHFFFAOYSA-N 0.000 description 2
- QBPPRVHXOZRESW-UHFFFAOYSA-N 1,4,7,10-tetraazacyclododecane Chemical group C1CNCCNCCNCCN1 QBPPRVHXOZRESW-UHFFFAOYSA-N 0.000 description 2
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical compound N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical class OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical compound C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
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- 238000009739 binding Methods 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- ATNHDLDRLWWWCB-AENOIHSZSA-M chlorophyll a Chemical group C1([C@@H](C(=O)OC)C(=O)C2=C3C)=C2N2C3=CC(C(CC)=C3C)=[N+]4C3=CC3=C(C=C)C(C)=C5N3[Mg-2]42[N+]2=C1[C@@H](CCC(=O)OC\C=C(/C)CCC[C@H](C)CCC[C@H](C)CCCC(C)C)[C@H](C)C2=C5 ATNHDLDRLWWWCB-AENOIHSZSA-M 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
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- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 2
- 125000001434 methanylylidene group Chemical group [H]C#[*] 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
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- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
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- 229920002120 photoresistant polymer Polymers 0.000 description 2
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 2
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- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
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- 125000001424 substituent group Chemical group 0.000 description 2
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- BGHCVCJVXZWKCC-UHFFFAOYSA-N tetradecane Chemical compound CCCCCCCCCCCCCC BGHCVCJVXZWKCC-UHFFFAOYSA-N 0.000 description 2
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
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- MDAXKAUIABOHTD-UHFFFAOYSA-N 1,4,8,11-tetraazacyclotetradecane Chemical compound C1CNCCNCCCNCCNC1 MDAXKAUIABOHTD-UHFFFAOYSA-N 0.000 description 1
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- BMUDPLZKKRQECS-UHFFFAOYSA-K 3-[18-(2-carboxyethyl)-8,13-bis(ethenyl)-3,7,12,17-tetramethylporphyrin-21,24-diid-2-yl]propanoic acid iron(3+) hydroxide Chemical compound [OH-].[Fe+3].[N-]1C2=C(C)C(CCC(O)=O)=C1C=C([N-]1)C(CCC(O)=O)=C(C)C1=CC(C(C)=C1C=C)=NC1=CC(C(C)=C1C=C)=NC1=C2 BMUDPLZKKRQECS-UHFFFAOYSA-K 0.000 description 1
- VAJVGAQAYOAJQI-UHFFFAOYSA-N 3-[18-(2-carboxylatoethyl)-3,8,13,17-tetramethyl-22,23-dihydroporphyrin-21,24-diium-2-yl]propanoate Chemical compound N1C(C=C2C(C)=CC(N2)=CC=2C(=C(CCC(O)=O)C(=C3)N=2)C)=CC(C)=C1C=C1C(C)=C(CCC(O)=O)C3=N1 VAJVGAQAYOAJQI-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
- H05K3/385—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by conversion of the surface of the metal, e.g. by oxidation, whether or not followed by reaction or removal of the converted layer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G45/00—Compounds of manganese
- C01G45/12—Manganates manganites or permanganates
- C01G45/1207—Permanganates ([MnO]4-) or manganates ([MnO4]2-)
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/389—Improvement of the adhesion between the insulating substrate and the metal by the use of a coupling agent, e.g. silane
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2310/00—Treatment by energy or chemical effects
- B32B2310/04—Treatment by energy or chemical effects using liquids, gas or steam
- B32B2310/0445—Treatment by energy or chemical effects using liquids, gas or steam using gas or flames
- B32B2310/0463—Treatment by energy or chemical effects using liquids, gas or steam using gas or flames other than air
- B32B2310/0481—Ozone
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2210/00—Purification or separation of specific gases
- C01B2210/0043—Impurity removed
- C01B2210/0089—Peroxides
- C01B2210/009—Hydrogen peroxide
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1157—Using means for chemical reduction
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4652—Adding a circuit layer by laminating a metal foil or a preformed metal foil pattern
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Chemical Treatment Of Metals (AREA)
- Laminated Bodies (AREA)
Abstract
Description
Claims (25)
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CN201710252287.0A CN107072072B (zh) | 2010-07-06 | 2010-07-06 | 处理铜表面以增强对印刷电路板中使用的有机衬底的粘着力的方法 |
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PCT/US2010/041091 WO2012005723A1 (en) | 2010-07-06 | 2010-07-06 | Methods of treating copper surfaces for enhancing adhesion to organic substrates for use in printed circuit boards |
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CN201710252287.0A Division CN107072072B (zh) | 2010-07-06 | 2010-07-06 | 处理铜表面以增强对印刷电路板中使用的有机衬底的粘着力的方法 |
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CN103120037A true CN103120037A (zh) | 2013-05-22 |
CN103120037B CN103120037B (zh) | 2017-05-10 |
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CN201710252287.0A Active CN107072072B (zh) | 2010-07-06 | 2010-07-06 | 处理铜表面以增强对印刷电路板中使用的有机衬底的粘着力的方法 |
CN201080067927.7A Active CN103120037B (zh) | 2010-07-06 | 2010-07-06 | 处理铜表面以增强对印刷电路板中使用的有机衬底的粘着力的方法 |
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Country Status (6)
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US (2) | US9345149B2 (zh) |
EP (1) | EP2591645B1 (zh) |
JP (1) | JP5946827B2 (zh) |
KR (2) | KR101730983B1 (zh) |
CN (2) | CN107072072B (zh) |
WO (1) | WO2012005723A1 (zh) |
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Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6141870A (en) | 1997-08-04 | 2000-11-07 | Peter K. Trzyna | Method for making electrical device |
US9338896B2 (en) * | 2012-07-25 | 2016-05-10 | Enthone, Inc. | Adhesion promotion in printed circuit boards |
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Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1220645A (zh) * | 1997-07-10 | 1999-06-23 | 莫顿国际股份有限公司 | 将氧化铜还原成金属铜的组合物及方法 |
CN1344134A (zh) * | 2000-09-21 | 2002-04-10 | 麦克德米德有限公司 | 改善高分子材料与金属表面粘附性的方法 |
US6593656B2 (en) * | 2001-02-05 | 2003-07-15 | Micron Technology, Inc. | Multilevel copper interconnects for ultra large scale integration |
CN1527747A (zh) * | 2000-09-19 | 2004-09-08 | ϣ | 处理粘着促进金属表面的方法 |
CN1606481A (zh) * | 2001-12-18 | 2005-04-13 | 旭化成株式会社 | 金属氧化物分散体 |
US20050271828A1 (en) * | 1999-03-31 | 2005-12-08 | Toshiro Saito | Wiring board and production method thereof, and semiconductor apparatus |
US7141299B2 (en) * | 2001-01-05 | 2006-11-28 | The Ohio State University Research Foundation | Electronic junction devices featuring redox electrodes |
US20060267202A1 (en) * | 2005-05-27 | 2006-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US20080096470A1 (en) * | 2006-10-24 | 2008-04-24 | Epoch Material Co., Ltd. | Chemical mechanical polishing slurry, its preparation method, and use for the same |
US20080131709A1 (en) * | 2006-09-28 | 2008-06-05 | Aculon Inc. | Composite structure with organophosphonate adherent layer and method of preparing |
Family Cites Families (146)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2364993A (en) | 1942-12-29 | 1944-12-12 | Walter R Meyer | Process for blackening copper or copper alloy surfaces |
US2460896A (en) | 1944-08-19 | 1949-02-08 | Enthone | Composition for blackening copper and copper alloy surfaces |
US2460898A (en) | 1944-11-04 | 1949-02-08 | Enthone | Process and composition for coloring copper and copper alloy surfaces |
US2955974A (en) | 1957-06-10 | 1960-10-11 | Int Resistance Co | Metal to plastic laminated article and the method of making the same |
US3011920A (en) | 1959-06-08 | 1961-12-05 | Shipley Co | Method of electroless deposition on a substrate and catalyst solution therefor |
US3198672A (en) | 1960-08-18 | 1965-08-03 | Internat Protected Metals Inc | Preparation of cupric oxide surfaces |
US3240662A (en) | 1961-01-23 | 1966-03-15 | Exxon Research Engineering Co | Impregnated reinforcing element bonded to an oxide coating on a copper foil |
US3177103A (en) | 1961-09-18 | 1965-04-06 | Sauders Associates Inc | Two pass etching for fabricating printed circuitry |
US3374129A (en) | 1963-05-02 | 1968-03-19 | Sanders Associates Inc | Method of producing printed circuits |
US3434889A (en) | 1965-12-27 | 1969-03-25 | Budd Co | Copper foil surface treatment |
US3481777A (en) | 1967-02-17 | 1969-12-02 | Ibm | Electroless coating method for making printed circuits |
US3532518A (en) | 1967-06-28 | 1970-10-06 | Macdermid Inc | Colloidal metal activating solutions for use in chemically plating nonconductors,and process of preparing such solutions |
US3544389A (en) | 1967-12-18 | 1970-12-01 | Bell Telephone Labor Inc | Process for surface treatment of copper and its alloys |
US3677828A (en) | 1970-07-30 | 1972-07-18 | Olin Corp | Tarnish resistant copper and copper alloys |
US3770598A (en) | 1972-01-21 | 1973-11-06 | Oxy Metal Finishing Corp | Electrodeposition of copper from acid baths |
US3876513A (en) | 1972-06-26 | 1975-04-08 | Oxy Metal Finishing Corp | Electrodeposition of bright cobalt plate |
US3833433A (en) | 1973-06-14 | 1974-09-03 | Olin Corp | Method of producing tarnish resistant copper and copper alloys and products thereof |
US4073740A (en) | 1975-06-18 | 1978-02-14 | Kollmorgen Technologies Corporation | Composition for the activation of resinous bodies for adherent metallization |
JPS5288772A (en) | 1976-01-20 | 1977-07-25 | Matsushita Electric Ind Co Ltd | Method of producing printed circuit board |
US4089686A (en) | 1976-04-19 | 1978-05-16 | Western Electric Company, Inc. | Method of depositing a metal on a surface |
US4374709A (en) | 1980-05-01 | 1983-02-22 | Occidental Chemical Corporation | Process for plating polymeric substrates |
US4446176A (en) | 1980-08-18 | 1984-05-01 | David Hudson, Inc. | Fluoroelastomer film compositions containing phenoxy resins and method for the preparation thereof |
US4376685A (en) | 1981-06-24 | 1983-03-15 | M&T Chemicals Inc. | Acid copper electroplating baths containing brightening and leveling additives |
US4409037A (en) | 1982-04-05 | 1983-10-11 | Macdermid Incorporated | Adhesion promoter for printed circuits |
US4844981A (en) | 1982-04-05 | 1989-07-04 | Macdermid, Incorporated | Adhesion promoter for printed circuits |
US4478883A (en) | 1982-07-14 | 1984-10-23 | International Business Machines Corporation | Conditioning of a substrate for electroless direct bond plating in holes and on surfaces of a substrate |
US4512818A (en) | 1983-05-23 | 1985-04-23 | Shipley Company Inc. | Solution for formation of black oxide |
US4608275A (en) | 1983-07-01 | 1986-08-26 | Macdermid, Incorporated | Oxidizing accelerator |
US4554182A (en) | 1983-10-11 | 1985-11-19 | International Business Machines Corporation | Method for conditioning a surface of a dielectric substrate for electroless plating |
US4448804A (en) | 1983-10-11 | 1984-05-15 | International Business Machines Corporation | Method for selective electroless plating of copper onto a non-conductive substrate surface |
US4515829A (en) | 1983-10-14 | 1985-05-07 | Shipley Company Inc. | Through-hole plating |
US4634468A (en) | 1984-05-07 | 1987-01-06 | Shipley Company Inc. | Catalytic metal of reduced particle size |
US4555315A (en) | 1984-05-29 | 1985-11-26 | Omi International Corporation | High speed copper electroplating process and bath therefor |
US4592852A (en) | 1984-06-07 | 1986-06-03 | Enthone, Incorporated | Composition and process for treating plastics with alkaline permanganate solutions |
JPS61176192A (ja) | 1985-01-31 | 1986-08-07 | 株式会社日立製作所 | 銅と樹脂との接着方法 |
US4673459A (en) | 1985-06-18 | 1987-06-16 | Kamyr, Inc. | Radial configuration of evaporator heating elements and method |
US4717439A (en) | 1985-10-24 | 1988-01-05 | Enthone, Incorporated | Process for the treatment of copper oxide in the preparation of printed circuit boards |
US4904506A (en) | 1986-01-03 | 1990-02-27 | International Business Machines Corporation | Copper deposition from electroless plating bath |
US4702793A (en) | 1986-03-12 | 1987-10-27 | Etd Technology Inc. | Method for manufacturing a laminated layered printed wiring board using a sulfuroxy acid and an oxiding treatment of the metallic wiring patterns to insure the integrity of the laminate product |
US4976990A (en) | 1986-09-30 | 1990-12-11 | Macdermid, Incorporated | Process for metallizing non-conductive substrates |
US5389496A (en) | 1987-03-06 | 1995-02-14 | Rohm And Haas Company | Processes and compositions for electroless metallization |
US4803097A (en) | 1987-04-20 | 1989-02-07 | Allied-Signal Inc. | Metal plating of plastic materials |
US4775444A (en) | 1987-08-26 | 1988-10-04 | Macdermid, Incorporated | Process for fabricating multilayer circuit boards |
US4810333A (en) | 1987-12-14 | 1989-03-07 | Shipley Company Inc. | Electroplating process |
US4948707A (en) | 1988-02-16 | 1990-08-14 | International Business Machines Corporation | Conditioning a non-conductive substrate for subsequent selective deposition of a metal thereon |
US5051154A (en) | 1988-08-23 | 1991-09-24 | Shipley Company Inc. | Additive for acid-copper electroplating baths to increase throwing power |
US5068013A (en) | 1988-08-23 | 1991-11-26 | Shipley Company Inc. | Electroplating composition and process |
US4919768A (en) | 1989-09-22 | 1990-04-24 | Shipley Company Inc. | Electroplating process |
US5342501A (en) | 1989-11-21 | 1994-08-30 | Eric F. Harnden | Method for electroplating metal onto a non-conductive substrate treated with basic accelerating solutions for metal plating |
US5015339A (en) | 1990-03-26 | 1991-05-14 | Olin Hunt Sub Iii Corp. | Process for preparing nonconductive substrates |
GB2243577A (en) | 1990-05-07 | 1991-11-06 | Compeq Manufacturing Co Limite | A method of bonding copper and resin |
US5318803A (en) | 1990-11-13 | 1994-06-07 | International Business Machines Corporation | Conditioning of a substrate for electroless plating thereon |
US5174886A (en) | 1991-02-22 | 1992-12-29 | Mcgean-Rohco, Inc. | High-throw acid copper plating using inert electrolyte |
JPH0525298A (ja) | 1991-06-19 | 1993-02-02 | Kureha Chem Ind Co Ltd | 樹脂成形品の金属化に好適な粗面化方法 |
US5207888A (en) | 1991-06-24 | 1993-05-04 | Shipley Company Inc. | Electroplating process and composition |
US5861076A (en) | 1991-07-19 | 1999-01-19 | Park Electrochemical Corporation | Method for making multi-layer circuit boards |
US5227013A (en) | 1991-07-25 | 1993-07-13 | Microelectronics And Computer Technology Corporation | Forming via holes in a multilevel substrate in a single step |
US5268088A (en) | 1991-12-12 | 1993-12-07 | Eric F. Harnden | Simplified method for direct electroplating of acrylic or epoxy containing dielectric substrates |
IT1256851B (it) * | 1992-01-21 | 1995-12-27 | Procedimento per promuovere l'aderenza fra diversi strati nella fabbricazione di circuiti stampati multistrato. e composizioni per l'attuazione di tale procedimento. | |
US5455072A (en) | 1992-11-18 | 1995-10-03 | Bension; Rouvain M. | Initiation and bonding of diamond and other thin films |
US5419954A (en) | 1993-02-04 | 1995-05-30 | The Alpha Corporation | Composition including a catalytic metal-polymer complex and a method of manufacturing a laminate preform or a laminate which is catalytically effective for subsequent electroless metallization thereof |
JP3400514B2 (ja) * | 1994-01-14 | 2003-04-28 | 松下電工株式会社 | 回路板の処理方法 |
JP3395854B2 (ja) | 1994-02-02 | 2003-04-14 | 日立化成工業株式会社 | 酸化銅の化学還元液およびこれを用いた多層プリント配線板の製造方法 |
JP2781954B2 (ja) | 1994-03-04 | 1998-07-30 | メック株式会社 | 銅および銅合金の表面処理剤 |
US5492595A (en) | 1994-04-11 | 1996-02-20 | Electrochemicals, Inc. | Method for treating an oxidized copper film |
US5425873A (en) | 1994-04-11 | 1995-06-20 | Shipley Company Llc | Electroplating process |
JP3400558B2 (ja) | 1994-08-12 | 2003-04-28 | メック株式会社 | 銅および銅合金のエッチング液 |
GB9425090D0 (en) * | 1994-12-12 | 1995-02-08 | Alpha Metals Ltd | Copper coating |
US5745984A (en) | 1995-07-10 | 1998-05-05 | Martin Marietta Corporation | Method for making an electronic module |
JP2923524B2 (ja) | 1995-08-01 | 1999-07-26 | メック株式会社 | 銅および銅合金のマイクロエッチング剤並びにマイクロエッチング方法 |
JP3458023B2 (ja) | 1995-08-01 | 2003-10-20 | メック株式会社 | 銅および銅合金のマイクロエッチング剤 |
US5648125A (en) | 1995-11-16 | 1997-07-15 | Cane; Frank N. | Electroless plating process for the manufacture of printed circuit boards |
US5753309A (en) | 1995-12-19 | 1998-05-19 | Surface Tek Specialty Products, Inc. | Composition and method for reducing copper oxide to metallic copper |
US5721014A (en) * | 1995-12-19 | 1998-02-24 | Surface Tek Specialty Products, Inc. | Composition and method for reducing copper oxide to metallic copper |
JP3458036B2 (ja) | 1996-03-05 | 2003-10-20 | メック株式会社 | 銅および銅合金のマイクロエッチング剤 |
US5750087B1 (en) | 1996-06-27 | 1999-12-14 | Mine Safety Appliances Co | Process for the reduction of copper oxide |
CN1147327C (zh) | 1996-09-23 | 2004-04-28 | 诺沃斯特股份有限公司 | 用于管腔内治疗系统的传送装置 |
US5869130A (en) | 1997-06-12 | 1999-02-09 | Mac Dermid, Incorporated | Process for improving the adhesion of polymeric materials to metal surfaces |
TW409261B (en) | 1998-01-13 | 2000-10-21 | Toppan Printing Co Ltd | A electrode plate with transmission-type or reflection-type multilayer electroconductive film, and the process for producing the electrode plate |
US6284317B1 (en) | 1998-04-17 | 2001-09-04 | Massachusetts Institute Of Technology | Derivatization of silicon surfaces |
JP4013352B2 (ja) | 1998-09-24 | 2007-11-28 | 松下電工株式会社 | 樹脂基材表面への金属膜形成方法 |
US6221653B1 (en) | 1999-04-27 | 2001-04-24 | Agilent Technologies, Inc. | Method of performing array-based hybridization assays using thermal inkjet deposition of sample fluids |
US6208553B1 (en) | 1999-07-01 | 2001-03-27 | The Regents Of The University Of California | High density non-volatile memory device incorporating thiol-derivatized porphyrins |
US6381169B1 (en) | 1999-07-01 | 2002-04-30 | The Regents Of The University Of California | High density non-volatile memory device |
US6324091B1 (en) | 2000-01-14 | 2001-11-27 | The Regents Of The University Of California | Tightly coupled porphyrin macrocycles for molecular memory storage |
US7042755B1 (en) | 1999-07-01 | 2006-05-09 | The Regents Of The University Of California | High density non-volatile memory device |
US6294392B1 (en) | 1999-07-21 | 2001-09-25 | The Regents Of The University Of California | Spatially-encoded analyte detection |
JP2001091745A (ja) | 1999-09-22 | 2001-04-06 | Nitto Denko Corp | 複合位相差板、光学補償偏光板及び液晶表示装置 |
JP4063475B2 (ja) | 1999-11-10 | 2008-03-19 | メック株式会社 | 銅または銅合金のエッチング剤 |
US7351353B1 (en) | 2000-01-07 | 2008-04-01 | Electrochemicals, Inc. | Method for roughening copper surfaces for bonding to substrates |
US6212093B1 (en) | 2000-01-14 | 2001-04-03 | North Carolina State University | High-density non-volatile memory devices incorporating sandwich coordination compounds |
AU778378B2 (en) | 2000-01-14 | 2004-12-02 | North Carolina State University | Substrates carrying polymers of linked sandwich coordination compounds and methods of use thereof |
US6272038B1 (en) | 2000-01-14 | 2001-08-07 | North Carolina State University | High-density non-volatile memory devices incorporating thiol-derivatized porphyrin trimers |
JP4033611B2 (ja) | 2000-07-28 | 2008-01-16 | メック株式会社 | 銅または銅合金のマイクロエッチング剤およびそれを用いるマイクロエッチング法 |
US6554948B1 (en) * | 2000-08-22 | 2003-04-29 | Donald Ferrier | Process for improving the adhesion of polymeric materials to metal surfaces |
US20040161545A1 (en) | 2000-11-28 | 2004-08-19 | Shipley Company, L.L.C. | Adhesion method |
US7112366B2 (en) | 2001-01-05 | 2006-09-26 | The Ohio State University | Chemical monolayer and micro-electronic junctions and devices containing same |
WO2002067641A1 (fr) | 2001-02-21 | 2002-08-29 | Kaneka Corporation | Tableau de connexions, procede de fabrication afferent, film de polyimide destine a etre utilise dans le tableau de connexions et agent d'attaque chimique destine a etre utilise dans ledit procede |
WO2002077633A1 (en) | 2001-03-23 | 2002-10-03 | The Regents Of The University Of California | Open circuit potential amperometry and voltammetry |
US6642376B2 (en) | 2001-04-30 | 2003-11-04 | North Carolina State University | Rational synthesis of heteroleptic lanthanide sandwich coordination complexes |
JP4997670B2 (ja) | 2001-06-29 | 2012-08-08 | 日本電気株式会社 | 共重合高分子膜の作製方法、前記形成方法で作製される共重合高分子膜、共重合高分子膜を利用する半導体装置 |
CN101024315A (zh) | 2001-07-06 | 2007-08-29 | 钟渊化学工业株式会社 | 层压体及其制造方法 |
BR0211639A (pt) | 2001-08-03 | 2005-06-28 | Elisha Holding Llc | Método sem eletricidade para tratamento de um substrato, meio aquoso para uso em um processo sem eletricidade para tratamento de uma superfìcie condutora e artigo compreendendo um substrato condutor de eletricidade |
DE10140246A1 (de) | 2001-08-09 | 2003-03-06 | Forsch Pigmente Und Lacke E V | Verfahren zur Behandlung von Oberflächen von Substraten |
FR2829046B1 (fr) | 2001-08-28 | 2005-01-14 | Commissariat Energie Atomique | Procede de greffage et de croissance d'un film organique conducteur sur une surface |
US6765069B2 (en) | 2001-09-28 | 2004-07-20 | Biosurface Engineering Technologies, Inc. | Plasma cross-linked hydrophilic coating |
US7074519B2 (en) | 2001-10-26 | 2006-07-11 | The Regents Of The University Of California | Molehole embedded 3-D crossbar architecture used in electrochemical molecular memory device |
US7348206B2 (en) | 2001-10-26 | 2008-03-25 | The Regents Of The University Of California | Formation of self-assembled monolayers of redox SAMs on silicon for molecular memory applications |
US6674121B2 (en) | 2001-12-14 | 2004-01-06 | The Regents Of The University Of California | Method and system for molecular charge storage field effect transistor |
US6728129B2 (en) | 2002-02-19 | 2004-04-27 | The Regents Of The University Of California | Multistate triple-decker dyads in three distinct architectures for information storage applications |
US6828581B2 (en) | 2002-02-26 | 2004-12-07 | The United States Of America As Represented By The Secretary Of Commerce | Selective electroless attachment of contacts to electrochemically-active molecules |
JP2004006672A (ja) | 2002-04-19 | 2004-01-08 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
US6850096B2 (en) | 2002-05-10 | 2005-02-01 | Yoshio Nishida | Interpolating sense amplifier circuits and methods of operating the same |
US6716281B2 (en) | 2002-05-10 | 2004-04-06 | Electrochemicals, Inc. | Composition and method for preparing chemically-resistant roughened copper surfaces for bonding to substrates |
FR2843828A1 (fr) | 2002-08-26 | 2004-02-27 | Commissariat Energie Atomique | Support de garniture et procede de garniture selective de plages conductrices d'un tel support |
US6958270B2 (en) | 2002-12-17 | 2005-10-25 | North Carolina State University | Methods of fabricating crossbar array microelectronic electrochemical cells |
US6944047B2 (en) | 2002-12-19 | 2005-09-13 | North Carolina State University | Variable-persistence molecular memory devices and methods of operation thereof |
FR2851181B1 (fr) | 2003-02-17 | 2006-05-26 | Commissariat Energie Atomique | Procede de revetement d'une surface |
FR2851258B1 (fr) | 2003-02-17 | 2007-03-30 | Commissariat Energie Atomique | Procede de revetement d'une surface, fabrication d'interconnexion en microelectronique utilisant ce procede, et circuits integres |
DE10315877B4 (de) | 2003-04-08 | 2005-11-17 | Roche Diagnostics Gmbh | Krankheitsverlaufkontrolle |
JP4871726B2 (ja) | 2003-04-28 | 2012-02-08 | ナノシス・インク. | 超疎液性表面、その作製法及び用途 |
US7312100B2 (en) | 2003-05-27 | 2007-12-25 | The North Carolina State University | In situ patterning of electrolyte for molecular information storage devices |
US7332599B2 (en) | 2003-06-06 | 2008-02-19 | North Carolina State University | Methods and intermediates for the synthesis of dipyrrin-substituted porphyrinic macrocycles |
US7026716B2 (en) | 2003-06-06 | 2006-04-11 | Rensselaer Polytechnic Institute | Self-assembled sub-nanolayers as interfacial adhesion enhancers and diffusion barriers |
US6943054B2 (en) | 2003-07-25 | 2005-09-13 | The Regents Of The University Of California | Attachment of organic molecules to group III, IV or V substrates |
US7223628B2 (en) | 2003-07-25 | 2007-05-29 | The Regents Of The University Of California | High temperature attachment of organic molecules to substrates |
US7056648B2 (en) | 2003-09-17 | 2006-06-06 | International Business Machines Corporation | Method for isotropic etching of copper |
US7211204B2 (en) | 2003-12-12 | 2007-05-01 | Electrochemicals, Inc. | Additives to stop copper attack by alkaline etching agents such as ammonia and monoethanol amine (MEA) |
US20050162895A1 (en) | 2004-01-28 | 2005-07-28 | Kuhr Werner G. | Molecular memory arrays and devices |
US7695756B2 (en) | 2004-04-29 | 2010-04-13 | Zettacore, Inc. | Systems, tools and methods for production of molecular memory |
US7307870B2 (en) | 2004-01-28 | 2007-12-11 | Zettacore, Inc. | Molecular memory devices and methods |
US7324385B2 (en) | 2004-01-28 | 2008-01-29 | Zettacore, Inc. | Molecular memory |
US7452572B1 (en) | 2004-03-11 | 2008-11-18 | The North Carolina State University | Procedure for preparing redox-active polymers on surfaces |
KR100638620B1 (ko) | 2004-09-23 | 2006-10-26 | 삼성전기주식회사 | 임베디드 수동소자용 인쇄회로기판재료 |
US7309658B2 (en) | 2004-11-22 | 2007-12-18 | Intermolecular, Inc. | Molecular self-assembly in substrate processing |
KR20070111549A (ko) * | 2005-03-11 | 2007-11-21 | 히다치 가세고교 가부시끼가이샤 | 구리의 표면 처리 방법 및 구리 |
US8173630B2 (en) | 2005-06-03 | 2012-05-08 | The Regents Of The University Of California | Multipodal tethers for high-density attachment of redox-active moieties to substrates |
KR100716304B1 (ko) | 2005-06-30 | 2007-05-08 | 엘지.필립스 엘시디 주식회사 | 액정 표시 장치용 인쇄판 및 그의 제조 방법 |
JP2007073834A (ja) | 2005-09-08 | 2007-03-22 | Shinko Electric Ind Co Ltd | 絶縁樹脂層上の配線形成方法 |
US8540899B2 (en) | 2007-02-07 | 2013-09-24 | Esionic Es, Inc. | Liquid composite compositions using non-volatile liquids and nanoparticles and uses thereof |
CN101842856B (zh) * | 2007-08-31 | 2013-10-09 | 埃托特克德国有限公司 | 处理表面以促进感兴趣的分子结合的方法、由其形成的涂层和器件 |
US20090056994A1 (en) | 2007-08-31 | 2009-03-05 | Kuhr Werner G | Methods of Treating a Surface to Promote Metal Plating and Devices Formed |
TW201109653A (en) | 2009-07-06 | 2011-03-16 | Sony Corp | Microfluidic device |
KR101730983B1 (ko) | 2010-07-06 | 2017-04-27 | 나믹스 코포레이션 | 인쇄회로기판에서 사용하기 위한 유기 기판에의 접착을 향상시키는 구리 표면의 처리 방법 |
TWI496523B (zh) | 2010-07-06 | 2015-08-11 | Esionic Corp | 處理銅表面以增進其對用於印刷電路板之有機基材之黏著的方法 |
JP5946802B2 (ja) | 2013-08-05 | 2016-07-06 | イーサイオニック コーポレーション | プリント配線板 |
-
2010
- 2010-07-06 KR KR1020157018089A patent/KR101730983B1/ko active IP Right Grant
- 2010-07-06 WO PCT/US2010/041091 patent/WO2012005723A1/en active Application Filing
- 2010-07-06 CN CN201710252287.0A patent/CN107072072B/zh active Active
- 2010-07-06 CN CN201080067927.7A patent/CN103120037B/zh active Active
- 2010-07-06 JP JP2013518360A patent/JP5946827B2/ja active Active
- 2010-07-06 EP EP10854525.2A patent/EP2591645B1/en active Active
- 2010-07-06 KR KR1020137003172A patent/KR101774906B1/ko active IP Right Grant
- 2010-07-06 US US13/142,588 patent/US9345149B2/en active Active
-
2016
- 2016-04-15 US US15/130,167 patent/US9795040B2/en active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1220645A (zh) * | 1997-07-10 | 1999-06-23 | 莫顿国际股份有限公司 | 将氧化铜还原成金属铜的组合物及方法 |
US20050271828A1 (en) * | 1999-03-31 | 2005-12-08 | Toshiro Saito | Wiring board and production method thereof, and semiconductor apparatus |
CN1527747A (zh) * | 2000-09-19 | 2004-09-08 | ϣ | 处理粘着促进金属表面的方法 |
CN1344134A (zh) * | 2000-09-21 | 2002-04-10 | 麦克德米德有限公司 | 改善高分子材料与金属表面粘附性的方法 |
US7141299B2 (en) * | 2001-01-05 | 2006-11-28 | The Ohio State University Research Foundation | Electronic junction devices featuring redox electrodes |
US6593656B2 (en) * | 2001-02-05 | 2003-07-15 | Micron Technology, Inc. | Multilevel copper interconnects for ultra large scale integration |
CN1606481A (zh) * | 2001-12-18 | 2005-04-13 | 旭化成株式会社 | 金属氧化物分散体 |
US20060267202A1 (en) * | 2005-05-27 | 2006-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US20080131709A1 (en) * | 2006-09-28 | 2008-06-05 | Aculon Inc. | Composite structure with organophosphonate adherent layer and method of preparing |
US20080096470A1 (en) * | 2006-10-24 | 2008-04-24 | Epoch Material Co., Ltd. | Chemical mechanical polishing slurry, its preparation method, and use for the same |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9345149B2 (en) | 2010-07-06 | 2016-05-17 | Esionic Corp. | Methods of treating copper surfaces for enhancing adhesion to organic substrates for use in printed circuit boards |
US9795040B2 (en) | 2010-07-06 | 2017-10-17 | Namics Corporation | Methods of treating copper surfaces for enhancing adhesion to organic substrates for use in printed circuit boards |
CN107002249A (zh) * | 2015-09-30 | 2017-08-01 | 三井金属矿业株式会社 | 粗糙化处理铜箔、覆铜层叠板和印刷电路板 |
CN107002249B (zh) * | 2015-09-30 | 2018-05-22 | 三井金属矿业株式会社 | 粗糙化处理铜箔、覆铜层叠板和印刷电路板 |
CN113614284A (zh) * | 2019-05-09 | 2021-11-05 | 纳美仕有限公司 | 具有金属层的金属材料的制造方法 |
CN113661275A (zh) * | 2019-05-09 | 2021-11-16 | 纳美仕有限公司 | 复合铜部件 |
TWI818164B (zh) * | 2019-05-09 | 2023-10-11 | 日商納美仕有限公司 | 複合銅構件、複合銅構件的製造方法、積層體、電子零件 |
TWI829898B (zh) * | 2019-05-09 | 2024-01-21 | 日商納美仕有限公司 | 具有金屬層之金屬構件的製造方法 |
CN114405788A (zh) * | 2021-11-29 | 2022-04-29 | 宁夏兴昊永胜盐业科技有限公司 | 采输卤装置的防腐方法 |
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EP2591645A1 (en) | 2013-05-15 |
KR101774906B1 (ko) | 2017-09-05 |
EP2591645B1 (en) | 2018-09-05 |
US9345149B2 (en) | 2016-05-17 |
US20170027065A1 (en) | 2017-01-26 |
JP5946827B2 (ja) | 2016-07-06 |
EP2591645A4 (en) | 2015-10-21 |
KR20130052608A (ko) | 2013-05-22 |
US9795040B2 (en) | 2017-10-17 |
CN107072072A (zh) | 2017-08-18 |
WO2012005723A1 (en) | 2012-01-12 |
KR20150084075A (ko) | 2015-07-21 |
KR101730983B1 (ko) | 2017-04-27 |
US20120125514A1 (en) | 2012-05-24 |
CN103120037B (zh) | 2017-05-10 |
CN107072072B (zh) | 2019-10-25 |
JP2013534054A (ja) | 2013-08-29 |
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