CN103097041B - 薄膜超声换能器 - Google Patents

薄膜超声换能器 Download PDF

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Publication number
CN103097041B
CN103097041B CN201180037543.5A CN201180037543A CN103097041B CN 103097041 B CN103097041 B CN 103097041B CN 201180037543 A CN201180037543 A CN 201180037543A CN 103097041 B CN103097041 B CN 103097041B
Authority
CN
China
Prior art keywords
transducer
array
layer
diaphragm
piezoelectric layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201180037543.5A
Other languages
English (en)
Chinese (zh)
Other versions
CN103097041A (zh
Inventor
M.克里
R.毛茨奧克
H.M.J.布特斯
N.M.A.德维尔德
B.K.斯里德哈兰奈尔
O.旺尼科
W.F.帕斯维尔
D.范德拉格马特
P.迪克森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
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Filing date
Publication date
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Publication of CN103097041A publication Critical patent/CN103097041A/zh
Application granted granted Critical
Publication of CN103097041B publication Critical patent/CN103097041B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • B06B1/0607—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements
    • B06B1/0622—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements on one surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • B06B1/0688—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction with foil-type piezoelectric elements, e.g. PVDF
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Micromachines (AREA)
  • Measurement Of Velocity Or Position Using Acoustic Or Ultrasonic Waves (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
  • Piezo-Electric Transducers For Audible Bands (AREA)
CN201180037543.5A 2010-07-30 2011-07-12 薄膜超声换能器 Expired - Fee Related CN103097041B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EP10305849.1 2010-07-30
EP10305849 2010-07-30
EP11305741.8 2011-06-14
EP11305741 2011-06-14
PCT/IB2011/053096 WO2012014111A2 (en) 2010-07-30 2011-07-12 Thin film ultrasound transducer

Publications (2)

Publication Number Publication Date
CN103097041A CN103097041A (zh) 2013-05-08
CN103097041B true CN103097041B (zh) 2016-03-30

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180037543.5A Expired - Fee Related CN103097041B (zh) 2010-07-30 2011-07-12 薄膜超声换能器

Country Status (5)

Country Link
US (2) US9440258B2 (enExample)
EP (1) EP2598255A2 (enExample)
JP (1) JP2013539254A (enExample)
CN (1) CN103097041B (enExample)
WO (1) WO2012014111A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111001553A (zh) * 2019-12-18 2020-04-14 武汉大学 一种可调谐的超声传感器阵列

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6102075B2 (ja) 2012-03-30 2017-03-29 セイコーエプソン株式会社 超音波トランスデューサー素子チップおよびプローブ並びに電子機器および超音波診断装置
US8767512B2 (en) * 2012-05-01 2014-07-01 Fujifilm Dimatix, Inc. Multi-frequency ultra wide bandwidth transducer
US9660170B2 (en) 2012-10-26 2017-05-23 Fujifilm Dimatix, Inc. Micromachined ultrasonic transducer arrays with multiple harmonic modes
TW201416140A (zh) * 2012-10-31 2014-05-01 Ind Tech Res Inst 可撓式超音波致動裝置
WO2014103593A1 (ja) * 2012-12-26 2014-07-03 富士フイルム株式会社 ユニモルフ型超音波探触子およびその製造方法
JP6442821B2 (ja) * 2013-09-30 2018-12-26 セイコーエプソン株式会社 超音波デバイス及び電子機器
US9309105B2 (en) * 2014-03-06 2016-04-12 Infineon Technologies Ag Sensor structure for sensing pressure waves and ambient pressure
FR3022674B1 (fr) * 2014-06-18 2019-12-13 Iem Sarl Borne de detection comprenant un transducteur piezoelectrique fixe a une membrane liee a une structure de butee
EP3175490B2 (en) * 2014-08-01 2025-03-12 Chirp Microsystems, Inc. Miniature micromachined ultrasonic rangefinder
WO2016016810A1 (en) * 2014-08-01 2016-02-04 Koninklijke Philips N.V. Intravascular ultrasound imaging apparatus, interface architecture, and method of manufacturing
KR102375889B1 (ko) * 2014-12-19 2022-03-16 삼성전자주식회사 에너지 발생 장치 및 그 제조방법
JP6488709B2 (ja) * 2015-01-13 2019-03-27 セイコーエプソン株式会社 振動素子の製造方法、振動素子、電子デバイス、電子機器、および移動体
CN105232146B (zh) * 2015-11-18 2018-01-02 郑州大学 一种具有超声定位功能的介入消融导管
US9842241B2 (en) 2015-12-21 2017-12-12 Intel Corporation Biometric cryptography using micromachined ultrasound transducers
CN106160691A (zh) * 2016-07-05 2016-11-23 电子科技大学 一种基于Si基的高频SAW器件及其制备方法
JP2017000792A (ja) * 2016-08-17 2017-01-05 セイコーエプソン株式会社 超音波トランスデューサー素子チップおよびプローブ並びに電子機器および超音波診断装置
JP6753293B2 (ja) * 2016-12-09 2020-09-09 セイコーエプソン株式会社 超音波デバイス及び超音波装置
US10675476B2 (en) 2016-12-22 2020-06-09 Cardiac Pacemakers, Inc. Internal thoracic vein placement of a transmitter electrode for leadless stimulation of the heart
JP6907539B2 (ja) 2017-01-06 2021-07-21 セイコーエプソン株式会社 超音波デバイス、超音波プローブ、及び超音波装置
JP6311815B2 (ja) * 2017-03-02 2018-04-18 セイコーエプソン株式会社 超音波トランスデューサー素子チップおよびプローブ並びに電子機器および超音波診断装置
JP6992292B2 (ja) * 2017-07-07 2022-01-13 コニカミノルタ株式会社 Ｍｅｍｓトランスデューサーの製造方法、ｍｅｍｓトランスデューサー、超音波探触子、および超音波診断装置
JP2019100791A (ja) * 2017-11-30 2019-06-24 セイコーエプソン株式会社 液面センサー及び液面検出方法
US10932062B2 (en) * 2018-02-17 2021-02-23 Apple Inc. Ultrasonic proximity sensors, and related systems and methods
JP7205191B2 (ja) * 2018-11-22 2023-01-17 セイコーエプソン株式会社 超音波センサー、及び電子機器
CN110046556B (zh) * 2019-03-27 2021-06-01 武汉华星光电技术有限公司 一种显示面板及其终端器件
CN110142194B (zh) * 2019-05-22 2021-01-29 京东方科技集团股份有限公司 声波换能器及驱动方法
US11063571B2 (en) * 2019-07-25 2021-07-13 Zhuhai Crystal Resonance Technologies Co., Ltd. Packaged electronic components
DE102020201802A1 (de) 2020-02-13 2021-08-19 Brose Fahrzeugteile Se & Co. Kommanditgesellschaft, Bamberg Ultraschallsensor eines Kraftfahrzeugs
JP7446957B2 (ja) * 2020-09-03 2024-03-11 ホシデン株式会社 検知センサ及びこれを備えた検知装置
AT523735B1 (de) 2020-11-10 2021-11-15 Ac2T Res Gmbh Hocheffektive Akustische Abschirmvorrichtung für Aerosole im Hinblick auf Atem- und Hautschutz
EP4272520A4 (en) * 2020-12-31 2024-11-13 Sofwave Medical Ltd. COOLING OF ULTRASONIC POWER SUPPLY DEVICES ON PRINTED CIRCUIT BOARDS
CN115078531B (zh) * 2021-03-15 2025-11-14 北京信泰智合科技发展有限公司 一种高频压电换能振元、高频超声探头和制备方法
CN112857276B (zh) * 2021-03-21 2023-05-16 中北大学 声表面波应变传感器及其制备方法
CN114007175B (zh) * 2021-10-19 2022-08-23 上海交通大学 超声换能器阵列及其形成方法
CN115276595A (zh) * 2022-07-04 2022-11-01 深圳市汇芯通信技术有限公司 声表面波滤波器、声表面波谐振器及其制造方法
CN115569827A (zh) * 2022-09-09 2023-01-06 中阳桥科技有限公司 一种陶瓷颗粒拼接成阵耐高温高压换能器
CN115400931B (zh) * 2022-10-31 2023-03-24 浙江仙声科技有限公司 一种减少超声换能器声串扰的深槽隔离方法及超声换能器
WO2025087040A1 (en) * 2023-10-26 2025-05-01 Hong Kong Centre For Logistics Robotics Limited Ultrasound transducers, arrays, systems comprising the same and methods of making the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001038011A1 (de) * 1999-11-26 2001-05-31 Siemens Aktiengesellschaft Ultraschall-wandler
CN2796747Y (zh) * 2005-05-26 2006-07-19 深圳市普罗惠仁医学科技有限公司 球冠式凹球面超声换能器
WO2009004558A2 (en) * 2007-07-03 2009-01-08 Koninklijke Philips Electronics N. V. Thin film detector for presence detection

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4385255A (en) * 1979-11-02 1983-05-24 Yokogawa Electric Works, Ltd. Linear array ultrasonic transducer
JP2658363B2 (ja) 1989-03-13 1997-09-30 日本電気株式会社 ソーナー用送受波器
JPH03125597A (ja) 1989-10-09 1991-05-28 Ritsuo Yoshida 内線電話用自動交換装置
JPH03125597U (enExample) * 1990-03-30 1991-12-18
US5495137A (en) 1993-09-14 1996-02-27 The Whitaker Corporation Proximity sensor utilizing polymer piezoelectric film with protective metal layer
US6323580B1 (en) 1999-04-28 2001-11-27 The Charles Stark Draper Laboratory, Inc. Ferroic transducer
US6327221B1 (en) 1999-09-20 2001-12-04 Honeywell International Inc. Steered beam ultrasonic sensor for object location and classification
US6782109B2 (en) * 2000-04-04 2004-08-24 University Of Florida Electromechanical acoustic liner
US6515402B2 (en) 2001-01-24 2003-02-04 Koninklijke Philips Electronics N.V. Array of ultrasound transducers
US6666825B2 (en) * 2001-07-05 2003-12-23 General Electric Company Ultrasound transducer for improving resolution in imaging system
JP3697200B2 (ja) 2001-11-07 2005-09-21 アロカ株式会社 超音波探触子
US6548937B1 (en) 2002-05-01 2003-04-15 Koninklijke Philips Electronics N.V. Array of membrane ultrasound transducers
US7098574B2 (en) * 2002-11-08 2006-08-29 Toyo Communication Equipment Co., Ltd. Piezoelectric resonator and method for manufacturing the same
US6831394B2 (en) * 2002-12-11 2004-12-14 General Electric Company Backing material for micromachined ultrasonic transducer devices
JP2005051689A (ja) * 2003-07-31 2005-02-24 Matsushita Electric Works Ltd 超音波アレイセンサおよび超音波センサ並びに超音波アレイセンサの製造方法
JP4513596B2 (ja) * 2004-08-25 2010-07-28 株式会社デンソー 超音波センサ
JP4622574B2 (ja) * 2005-02-21 2011-02-02 株式会社デンソー 超音波素子
JP4991145B2 (ja) * 2005-11-30 2012-08-01 ブラザー工業株式会社 圧電アクチュエータの検査方法
US7730785B2 (en) * 2006-04-26 2010-06-08 Denso Corporation Ultrasonic sensor and manufacture method of the same
JP4640249B2 (ja) * 2006-04-26 2011-03-02 株式会社デンソー 超音波センサ
JP2009118093A (ja) 2007-11-05 2009-05-28 Seiko Epson Corp 静電型トランスデューサ、および超音波スピーカ
JP2009289982A (ja) * 2008-05-29 2009-12-10 Fujifilm Corp 強誘電性酸化物構造体、及び強誘電性酸化物構造体の製造方法、液体吐出装置
JP5499479B2 (ja) * 2009-01-13 2014-05-21 セイコーエプソン株式会社 電子機器
JP5751026B2 (ja) * 2011-05-31 2015-07-22 セイコーエプソン株式会社 超音波トランスデューサー、生体センサー、及び超音波トランスデューサーの製造方法
US20140187959A1 (en) * 2012-12-31 2014-07-03 Volcano Corporation Ultrasound Transducers and Methods of Manufacturing Same
US10618079B2 (en) * 2016-02-29 2020-04-14 Qualcomm Incorporated Piezoelectric micromechanical ultrasonic transducers and transducer arrays

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001038011A1 (de) * 1999-11-26 2001-05-31 Siemens Aktiengesellschaft Ultraschall-wandler
CN2796747Y (zh) * 2005-05-26 2006-07-19 深圳市普罗惠仁医学科技有限公司 球冠式凹球面超声换能器
WO2009004558A2 (en) * 2007-07-03 2009-01-08 Koninklijke Philips Electronics N. V. Thin film detector for presence detection

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111001553A (zh) * 2019-12-18 2020-04-14 武汉大学 一种可调谐的超声传感器阵列

Also Published As

Publication number Publication date
EP2598255A2 (en) 2013-06-05
CN103097041A (zh) 2013-05-08
JP2013539254A (ja) 2013-10-17
US20130208572A1 (en) 2013-08-15
US20160365840A1 (en) 2016-12-15
US9440258B2 (en) 2016-09-13
WO2012014111A2 (en) 2012-02-02
WO2012014111A3 (en) 2013-03-07

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