CN103077902B - 芯片接合薄膜的烧蚀加工方法 - Google Patents
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Abstract
本发明涉及芯片接合薄膜的烧蚀加工方法,其目的在于提供可确实地进行与单个器件相对应的DAF分割的DAF烧蚀加工方法。本发明的芯片接合薄膜的烧蚀加工方法为对芯片接合薄膜照射激光光束来施以烧蚀加工的芯片接合薄膜的烧蚀加工方法,该加工方法的特征在于,其具备保护膜形成工序与激光加工工序,在保护膜形成工序中,将混入了对于激光光束的波长具有吸收性的氧化物微粉末的液态树脂涂布至芯片接合薄膜的至少要进行烧蚀加工的区域,来形成掺入有该微粉末的保护膜;在激光加工工序中,在实施了该保护膜形成工序之后,对芯片接合薄膜的形成了该保护膜的区域照射激光光束来施以烧蚀加工。
Description
【技术领域】
本发明涉及对芯片接合薄膜(DAF)照射激光光束来施以烧蚀加工的芯片接合薄膜的烧蚀加工方法。
【背景技术】
对于表面形成有通过预定分割线(分割予定ライン)分开的IC、LSI、LED等多种器件的硅晶片、蓝宝石晶片等晶片,利用切削装置或激光加工装置等加工装置将其分割成单个的器件,所分割出的器件广泛用于移动电话、个人电脑等各种电子设备中。
在晶片的分割中,广泛采用的的切割方法是使用被称为切割锯的切削装置的切割方法。在该切割方法中,使利厚度为30μm左右的切削刀以30000rpm左右的高速旋转向晶片切入来对晶片进行切削,将晶片分割成单个的器件,其中,所述切削刀是用金属或树脂固定了金刚石等磨料粒而成的。
近年来,对于移动电话、个人电脑等电子设备,进一步要求轻量化、小型化,要求有更薄的器件。作为将晶片分割成更薄的器件的技术,开发出了被称为所谓先切割法的分割技术并进行了实用化(例如,参照日本特开2002-118081号公报)。
该先切割法为下述技术:沿着预定分割线自半导体晶片的表面起形成规定深度(与器件的成品厚度相当的深度)的分割槽,其后,对于在表面形成有分割槽的半导体晶片的背面进行磨削,使分割槽在该背面露出,从而分割成单个的器件;其可将器件的厚度加工至100μm以下。
为了将这样地利用先切割法进行了分割的器件搭载至引线框架,多采用下述方法:在器件的背面粘接被称为芯片接合薄膜(DAF)的芯片粘贴用粘接膜,藉由DAF将器件安装至引线框架。
在该安装方法中,由于通过先切割法被分割成单个器件的晶片通过贴付在其表面的保护带而呈一体化,因而在分割成单个器件的晶片背面贴付DAF,将DAF贴付在经环状框架支持的胶带上。然后剥离贴付在晶片表面的保护带。
随后对下述这样的技术进行了研究,该技术中,利用激光加工装置的卡盘工作台来对经环状框架支持的带有DAF的晶片进行吸附保持,藉由晶片上所形成的分割槽对DAF照射激光光束,按照每个器件来对DAF进行分割。
【现有技术文献】
【专利文献】
专利文献1:日本特开2002-118081号公报
【发明内容】
【发明所要解决的课题】
但是,在分割成单个器件的晶片的背面贴付有DAF(芯片接合薄膜),即使沿着分割槽进行激光光束的照射来对应于单个器件进行DAF的分割,也存在激光光束的能量未充分传递至DAF、无法确实地进行分割这样的问题。
本发明是鉴于这样的方面而进行的,其目的在于提供可确实地进行将DAF对应单个器件分割的DAF的烧蚀加工方法。
【解决课题的手段】
根据本发明,提供了一种芯片接合薄膜的烧蚀加工方法,其为对芯片接合薄膜照射激光光束来施以烧蚀加工的芯片接合薄膜的烧蚀加工方法,该方法的特征在于,其具备保护膜形成工序与激光加工工序,在保护膜形成工序中,在至少芯片接合薄膜要进行烧蚀加工的区域涂布混入了对于激光光束的波长具有吸收性的氧化物微粉末的液态树脂涂布,形成掺入有该微粉末的保护膜;在激光加工工序中,在实施了该保护膜形成工序之后,对芯片接合薄膜的形成了该保护膜的区域照射激光光束来施以烧蚀加工。
优选氧化物微粉末的平均粒径小于激光光束的光斑径。优选激光光束的波长为355nm以下,氧化物的微粉末含有选自由Fe2O3、ZnO、TiO2、CeO2、CuO、Cu2O和MgO组成的组中的金属氧化物,液态树脂含有聚乙烯醇。
【发明的效果】
由于本发明的芯片接合薄膜的烧蚀加工方法中将混入了对于激光光束的波长具有吸收性的氧化物微粉末的液态树脂涂布至芯片接合薄膜的至少要进行烧蚀加工的区域来形成保护膜,因而激光光束被氧化物微粉末所吸收并达到带隙能量,原子的结合力被破坏,从而对芯片接合薄膜施以连锁性烧蚀加工,可确实地对应器件芯片来进行接合薄膜的分割。
【附图说明】
图1为适于实施本发明的烧蚀加工方法的激光加工装置的立体图。
图2为激光光束照射单元的框图。
图3为被分割成经胶带而由环状框架所支持的状态的单个器件的带有DAF的晶片的立体图。
图4为图3所示的带有DAF的晶片的截面图。
图5为示出第1实施方式的液态树脂涂布工序的立体图。
图6为示出各种金属氧化物的分光透过率的曲线图。
图7为示出第1实施方式的DAF的烧蚀加工工序的立体图。
图8为将DAF沿着分割槽分割的状态的图7所示的带有DAF晶片的截面图。
图9为示出第2实施方式的DAF的液态树脂涂布工序的立体图。
图10为示出第2实施方式的DAF的烧蚀加工工序的立体图。
【具体实施方式】
下面参照附图详细说明本发明的实施方式。图1示出了适于实施本发明的芯片接合薄膜(DAF)的烧蚀加工方法的激光加工装置的示意性构成图。
激光加工装置2含有搭载在静止基台4上的第1滑块6,该第1滑块6可沿X轴方向移动。第1滑块6在由圆头螺栓8和脉冲马达10构成的加工进给单元12的作用下沿着一对导轨14在加工进给方向、即X轴方向移动。
在第1滑块6上搭载有第2滑块16,该第2滑块16可沿着Y轴方向移动。即,第2滑块16在由圆头螺栓(ボールねじ)18和脉冲(パルス)马达20构成的分度(割り出し)进给单元22的作用下沿着一对导轨24在分度方向即Y轴方向进行移动。
在第2滑块16上藉由圆筒支持部件26搭载有卡盘工作台28,卡盘工作台28可通过加工进给单元12和分度进给单元22沿X轴方向和Y轴方向移动。卡盘工作台28设有夹头30,用于夹住被吸附保持于卡盘工作台28的半导体晶片。
在静止基台4立设有柱32,该柱32安装有容纳激光光束照射单元34的外壳35。如图2所示,激光光束照射单元34含有:发出YAG激光或YVO4激光的激光振荡器62;重复频率设定单元64;脉冲宽度调整单元66;以及功率调整单元68。
通过激光光束照射单元34的功率调整单元68调整至特定功率的脉冲激光光束被安装在外壳35前端的聚焦器36的镜70所反射,进一步经聚焦用物镜72聚焦,照射至保持于卡盘工作台28的半导体晶片W。
在外壳35的前端部配设有聚焦器36与在X轴方向排列的对于要进行激光加工的加工区域进行检测的摄像单元38。摄像单元38含有利用可见光对半导体晶片的加工区域摄像的CCD等常规摄像元件。
摄像单元38进一步含有:对半导体晶片照射红外线的红外线照射器;捕捉由红外线照射器照射的红外线的光学系;以及输出与由该光学系捕捉的红外线相应的电气信号的由红外线CCD等红外线摄像元件构成的红外线摄像单元,所拍摄的图像信号被发送至控制器(调节单元)40。
控制器40由计算机构成,其具备:依调节程序进行演算处理的中央处理装置(CPU)42;存储调节程序等的只读存储器(ROM)44;存储演算结果等的可读写随机存取存储器(RAM)46;计算器48;输入接口50;以及输出接口52。
56为由沿着导向轨14配设的线性标尺54与配设于第1滑块6的未图示的读取头构成的加工进给量检测单元,加工进给量检测单元56的检测信号被输入至控制器40的输入接口50。
60为由沿着导轨24配设的线性标尺58与配设于第2滑块16的未图示的读取头构成的分度进给量检测单元,分度进给量检测单元60的检测信号被输入至控制器40的输入接口50。
经摄像单元38拍摄的图像信号也被输入至控制器40的输入接口50。另一方面,由控制器40的输出接口52向脉冲马达10、脉冲马达20、激光光束照射单元34等输出调节信号。
参照图3,示出了作为本发明烧蚀加工方法的加工对象的被分割为单个器件的带有DAF(芯片接合薄膜)的半导体晶片W的立体图。DAF13是在由环氧树脂、丙烯酸树脂、合成橡胶、聚酰亚胺等构成的基材上配设丙烯酸系或橡胶系的糊层而构成的。
本实施方式的DAF(芯片接合薄膜)的烧蚀加工方法中,首先,作为其前工序,在通过先切割法分割成单个器件D的晶片W的背面贴合DAF13,将DAF13贴付至被环状框架F所支持的胶带T。
接下来,剥离贴付于晶片W表面的保护带。该状态示于图3。11为分割槽。参照图4,示出了图3所示的带有DAF的晶片W的截面图。
本实施方式的DAF13的烧蚀加工方法中,首先实施液态树脂涂布工序,在该工序中,将混入有相对于激光光束波长具有吸收性的氧化物微粉末的液态树脂涂布至DAF13的要进行烧蚀加工的区域。
例如,如图5所示,在液态树脂供给源76中储藏了混入有相对于激光光束波长(例如355nm)具有吸收性的氧化物微粉末(例如TiO2)的PVA(聚乙烯醇)等液态树脂80。
通过驱动泵78,将储藏在液态树脂供给源76中的液态树脂80由供给喷嘴74供给至晶片W的表面,使液态树脂80穿过晶片W的表面和分割槽11涂布至DAF13的表面。
并且使该液态树脂80固化,形成混入有相对于激光光束波长具有吸收性的氧化物微粉末的保护膜82。该保护膜82也形成于在分割槽11露出的DAF13的上面。
液态树脂80在晶片W的表面上的涂布方法例如可以采用一边使晶片W旋转一边进行涂布的旋涂法。作为混入至PVA(聚乙烯醇)、PEG(聚乙二醇)等液态树脂中的氧化物微粉末,本实施方式中采用TiO2。
在图4所示的实施方式中,将含有氧化物微粉末的液态树脂80涂布至晶片W的整个面来形成了保护膜82,但也可以仅在要进行烧蚀加工的区域、即在分割槽11露出的DAF13上涂布液态树脂80来形成保护膜。混入至液态树脂中的氧化物微粉末的平均粒径优选小于激光光束的光斑径,例如优选小于10μm。
参照图6,示出了ZnO、TiO2、CeO2、Fe2O3的分光透过率。由该曲线图可以理解,若将烧蚀加工中所用的激光光束的波长设定为355nm以下,则激光光束几乎全被这些金属氧化物微粉末所吸收。
除了图6所示的金属氧化物以外,CuO、Cu2O和MgO也具有同样倾向的分光透过率,因而可以用作混入至液态树脂中的微粉末。因而,作为混入至液态树脂中的氧化物微粉末,可以采用TiO2、Fe2O3、ZnO、CeO2、CuO、Cu2O、MgO的任意一种。
表1中示出了这些金属氧化物的消光系数(衰减系数)k和熔点。另外,消光系数k与吸收系数α之间具有α=4πk/λ的关系。此处,λ为所使用的光的波长。
【表1】
消光系数k(@355nm) | 熔点(℃) | |
ZnO | 0.38 | 1975 |
0.2 | 1870 | |
1< | 1566 | |
0.2 | 1950 | |
CuO | 1.5 | 1201 |
1.44 | 1235 |
实施液态树脂涂布工序在晶片W的表面和在分割槽11露出的DAF13表面形成保护膜82后,通过烧蚀加工实施激光加工工序。在该激光加工工序中,如图7所示,利用聚焦器36对相对于保护膜82中的氧化物微粉末具有吸收性的波长(例如355nm)的脉冲激光光束37进行聚焦,穿过分割槽11照射至DAF13的表面,同时使卡盘工作台28沿图7中箭头X1方向以规定的加工进给速度进行移动,如图8所示,通过沿着分割槽13进行烧蚀加工,在DAF13形成激光加工槽15。
将保持有晶片W的卡盘工作台28沿Y轴方向进行分度进给,同时穿过在第1方向伸长的全部分割槽11来进行烧蚀加工,从而在DAF13上形成同样的激光加工槽15。
接下来,对卡盘工作台28进行90度旋转,之后,穿过在与第1方向正交的第2方向伸长的全部分割槽11来进行烧蚀加工,从而在DAF13上形成同样的激光加工槽15,对应于器件D进行DAF13的分割。
本实施方式的激光加工条件例如按如下进行设定。
光源:YAG脉冲激光器
波长:355nm(YAG激光器第3谐波)
平均输出功率:0.5~10W
重复频率:10~200kHz
光斑径:Φ1~10μm
进给速度:10~100mm/秒
接下来,参照图9和图10,对本发明第2实施方式的DAF13的烧蚀加工方法进行说明。本实施方式中,将DAF13贴付至被环状框架F所支持的胶带T。
并且,与上述第1实施方式同样地,将储藏于液态树脂供给源76中的液态树脂80由供给喷嘴74供给至DAF13的表面,将液态树脂80涂布至DAF13的表面。并使该液态树脂80固化,在DAF13上形成混入有相对于激光光束波长具有吸收性的氧化物微粉末的保护膜82。
接下来,如图10所示,利用聚焦器36对相对于保护膜82中的氧化物微粉末具有吸收性的波长(例如355nm)的脉冲激光光束37进行聚焦并照射至DAF13的表面,同时使卡盘工作台28沿图10中箭头X1方向以规定的加工进给速度进行移动,在DAF13形成激光加工槽84。
将保持有DAF13的卡盘工作台28沿Y轴方向例如按半导体晶片W的每一刻度间距(slitpitch)进行分度进给,同时形成在第1方向伸长的2个以上的激光加工槽84。
接下来,对卡盘工作台28进行90度旋转,之后形成在与在第1方向伸长的激光加工槽84正交的第2方向伸长的同样的激光加工槽84,将DAF13分割成与半导体晶片W的器件D相应的形状。如此进行了分割的DAF13贴付在器件D的背面。
根据上述第1和第2实施方式的DAF13的烧蚀加工方法,由于在将混入有相对于激光光束波长具有吸收性的氧化物微粉末的液态树脂80涂布至DAF13的表面来形成保护膜82之后实施烧蚀加工,因而激光光束的能量被氧化物微粉末所吸收,达到带隙能量,原子的结合力被破坏,从而可对DAF13施以连锁性的烧蚀加工,可对应器件D确实地进行DAF13的分割。混入至液态树脂中的氧化物微粉末发挥出作为加工促进剂的作用。
【符号的说明】
W半导体晶片
T胶带(切割带)
F环状框架
D器件
2激光加工装置
11分割槽
13DAF
15激光加工槽
28卡盘工作台
34激光光束照射单元
36聚焦器
80含有微粉末的液态树脂
82保护膜
84激光加工槽
Claims (2)
1.一种芯片接合薄膜的烧蚀加工方法,其为对芯片接合薄膜照射激光光束来施以烧蚀加工的芯片接合薄膜的烧蚀加工方法,所述芯片接合薄膜贴附在分割出单个器件的晶片的背面,该加工方法的特征在于,其具备保护膜形成工序与激光加工工序,
保护膜形成工序中,将混入了对于激光光束的波长具有吸收性的氧化物微粉末的液态树脂涂布至芯片接合薄膜的至少要进行烧蚀加工的区域,来形成掺入有该微粉末的保护膜;
激光加工工序中,在实施了该保护膜形成工序之后,沿着分割出单个器件的晶片的分割槽,对该芯片接合薄膜的形成了该保护膜的区域照射激光光束,激光光束的能量被所述氧化物微粉末吸收并达到带隙能量,原子的结合力被破坏,从而对芯片接合薄膜施以连锁性烧蚀加工,对应单个器件分割该芯片接合薄膜,
所述氧化物微粉末的平均粒径小于激光光束的光斑径,且激光光束的光斑径为1μm~10μm,所述激光光束的波长为355nm以下;所述氧化物微粉末含有选自由Fe2O3、ZnO、TiO2、CeO2、CuO、Cu2O和MgO组成的组中的金属氧化物。
2.如权利要求1所述的芯片接合薄膜的烧蚀加工方法,其中,进一步具有支持工序,其中,将芯片接合薄膜贴付在通过先切割法分割出单个器件的晶片的背面,将该芯片接合薄膜贴付在外周部由环状框架支持的胶带上,利用该环状框架支持晶片和该芯片接合薄膜。
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US20130087949A1 (en) | 2013-04-11 |
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TW201330077A (zh) | 2013-07-16 |
JP2013081962A (ja) | 2013-05-09 |
KR20130037638A (ko) | 2013-04-16 |
CN103077902A (zh) | 2013-05-01 |
US9700961B2 (en) | 2017-07-11 |
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SG189620A1 (en) | 2013-05-31 |
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