TWI570798B - Ablation processing of wafer attached film - Google Patents

Ablation processing of wafer attached film Download PDF

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Publication number
TWI570798B
TWI570798B TW101131334A TW101131334A TWI570798B TW I570798 B TWI570798 B TW I570798B TW 101131334 A TW101131334 A TW 101131334A TW 101131334 A TW101131334 A TW 101131334A TW I570798 B TWI570798 B TW I570798B
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wafer
film
attached
laser beam
daf
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TW101131334A
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TW201330077A (zh
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Nobuyasu Kitahara
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Disco Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/18—Working by laser beam, e.g. welding, cutting or boring using absorbing layers on the workpiece, e.g. for marking or protecting purposes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H01L2224/2743—Manufacturing methods by blanket deposition of the material of the layer connector in solid form
    • H01L2224/27436—Lamination of a preform, e.g. foil, sheet or layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • H—ELECTRICITY
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER

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  • Computer Hardware Design (AREA)
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  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Application Of Or Painting With Fluid Materials (AREA)

Description

晶片附著膜之燒蝕加工方法 技術領域
本發明係有關對晶片附著膜(DAF)照射雷射光束而施行燒蝕加工之晶片附著膜之燒蝕加工方法。
背景技術
藉由切削裝置或雷射加工裝置等加工裝置，將在表面形成有由分割預定線所劃分之IC、LSI、LED等複數元件的矽晶圓、藍寶石晶圓等晶圓分割為個別之元件，分割後之元件被廣泛地利用於手機、電腦等各種電子機器。
使用稱作切割機(dicing saw)之切割裝置的切割方法被廣泛地採用於晶圓之分割。切割方法係將以金屬、樹脂固化鑽石等砥粒之厚度30μm左右之切削刀，以30000rpm左右之高速旋轉並往晶圓切入，藉此切削晶圓，將晶圓分割為個別之元件。
近年來，手機或電腦等電子機器追求輕量化、小型化，要求更薄之元件。作為將晶圓分割為更薄之元件的技術，一種被稱作先切割法之分割技術被開發且實用化(例如，參照日本特開2002-118081號公報)
該先切割法係從半導體晶圓的表面沿著分割預定線形成預定深度(相當於元件完成之厚度)之分割溝，之後，對表面形成有分割溝之半導體晶圓的背面進行研磨，使分割溝於該背面出現而分割為個別之元件的技術，可將 元件的厚度加工至100μm以下。
要將藉由如此之先切割法所分割之元件搭載於導線架(lead frame)，常採用的方法是於元件的背面將被稱作晶片附著膜(DAF)之晶粒結著(die bonding)用接著薄膜予以接著，透過DAF將元件安裝於導線架。
在該安裝方法中，由於藉先切割法而分割成個別元件的晶圓係藉由貼著於其表面之保護膠帶而一體化，故於分割成個別元件的晶圓的背面貼著DAF，將DAF貼著於受環狀框所支持之黏著膠帶。然後，將已貼著於晶圓的表面之保護膠帶予以剝離。
接著，以雷射加工裝置之夾頭工作台對受環狀框支持之附有DAF之晶圓進行吸引保持，透過已形成於晶圓上之分割溝而於DAF照射雷射光束，將DAF依各元件分割之技術正受到檢討。
先行技術文獻 專利文獻
[專利文獻1]日本特開2002-118011號公報
然而，即便於分割成個別元件的晶圓的背面貼著DAF(晶片附著膜)，沿著分割溝照射雷射光束而欲將DAF對應個別元件來予以分割，亦會有雷射光束的能量未充分傳達至DAF而無法確實地分割之問題。
本發明是鑑於如此之事情而構成者，其目的在於 提供一種可將DAF對應個別元件而確實地予以分割之晶片附著膜之燒蝕加工方法。
根據本發明，提供一種晶片附著膜之燒蝕加工方法，係於晶片附著膜照射雷射光束而施行燒蝕加工者，該晶片附著膜之燒蝕加工方法包含以下步驟：保護膜形成步驟，係至少於應進行燒蝕加工之晶片附著膜之區域塗佈液狀樹脂，且前述液狀樹脂混有對雷射光束之波長具有吸收性之氧化物之微粉末，而形成含有該微粉末之保護膜；及雷射加工步驟，係於實施了該保護膜形成步驟後，於形成有該保護膜之晶片附著膜之區域照射雷射光束而施行燒蝕加工。
較佳者是氧化物之微粉末之平均粒徑比雷射光束之點徑小。較佳者是雷射光束之波長為355nm以下，氧化物之微粉末包含從由Fe2O3、ZnO、TiO2、CeO2、CuO、Cu2O及MgO所構成之群中選擇出之金屬氧化物，液狀樹脂包含聚乙烯醇。
本發明之晶片附著膜之燒蝕加工方法，係至少於應進行燒蝕加工之晶片附著膜之區域塗佈液狀樹脂而形成保護膜，且前述液狀樹脂混有對雷射光束之波長具有吸收性之氧化物之微粉末，因此，藉由雷射光束被氧化物之微粉末吸收達到帶隙能量、原子之結合力被破壞而連鎖地於晶片附著膜施行燒蝕加工，可對應元件而確實地將晶片附 著膜予以分割。
圖式簡單說明
圖1係適於實施本發明之燒蝕加工方法之雷射加工裝置的立體圖。
圖2係雷射光束照射單元的方塊圖。
圖3係透過黏著膠帶而藉由環狀框支持之狀態之分割成個別元件之附有DAF之晶圓的立體圖。
圖4係圖3所示之附有DAF之晶圓的截面圖。
圖5係顯示第1實施型態之液狀樹脂塗佈步驟的立體圖。
圖6係顯示各種金屬氧化物之分光穿透率的圖表。
圖7係顯示關於第1實施型態之DAF之燒蝕加工步驟的立體圖。
圖8係顯示DAF沿著分割溝被分割之狀態之圖7所示之附有DAF之晶圓的截面圖。
圖9係顯示利用第2實施型態之DAF之液狀樹脂塗佈步驟的立體圖。
圖10係顯示關於第2實施型態之DAF之燒蝕加工步驟的立體圖。
用以實施發明之較佳型態
以下，參照圖面來詳細說明本發明之實施型態。圖1係顯示著適於實施本發明之晶片附著膜(DAF)之燒蝕加工方法之雷射加工裝置的概略構成圖。
雷射加工裝置2包含有可朝X軸方向移動地搭載於靜止基台4上之第1滑動塊6。第1滑動塊6係藉由加工進给手段12而沿著一對導軌14朝加工進给方向(亦即X軸方向)移動，加工進给手段12係由滾珠螺桿8與脈衝馬達10構成。
第2滑動塊16係可朝Y軸方向移動地搭載於第1滑動塊6上。亦即，第2滑動塊16係藉由分度進给手段22而沿著一對導軌24朝分度進给方向(亦即Y軸方向)移動，分度進给手段22係由滾珠螺桿18與脈衝馬達20構成。
於第2滑動塊16上透過圓筒支持構件26而搭載有夾頭工作台28，夾頭工作台28可藉由加工進给手段12與分度進给手段22朝X軸方向及Y軸方向移動。於夾頭工作台28設有夾具30，該夾具30係夾持被夾頭工作台28吸引保持之半導體晶圓。
於靜止基台4站立設置有柱32，於該柱32安裝有用於收納雷射光束照射單元34之殼體35。如圖2所示，雷射光束照射單元34包含有用於振盪發射YAG雷射或YVO4雷射之雷射振盪器62、反覆頻率設定手段64、脈衝寬調整手段66、功率調整手段68。
藉由雷射光束照射單元34之功率調整手段68而調整至預定功率之脈衝雷射光束，係在安裝於殼體35前端之聚光器36的鏡子70被反射，且更藉由聚光用物鏡72而聚光以照射於被保持在夾頭工作台28之半導體晶圓W。
在殼體35的前端部，與聚光器36於X軸方向排列而配設有檢測應進行雷射加工之加工區域之攝像單元38。 攝像單元38包含有利用可視光而對半導體晶圓之加工區域進行攝像之通常CCD等攝像元件。
攝像單元38更包含有紅外線攝像單元，且該紅外線攝像單元係由：於半導體晶圓照射紅外線的紅外線照射器、可捕捉由紅外線照射器所照射之紅外線的光學系統、輸出與由該光學系統所捕捉之紅外線對應之電訊號的紅外線CCD等紅外線攝像元件構成，而將所攝像之圖像訊號朝控制器(控制手段)40發送。
控制器40係由電腦構成，具有依據控制程式而進行演算處理之中央處理裝置(CPU)42、收納控制程式等之唯讀記憶體(ROM)44、收納演算結果等之可讀寫之隨機存取記憶體(RAM)46、計數器48、輸入介面50、輸出介面52。
加工進给量檢測手段56係由延著導軌14配設之線性標度54、及配設於第1滑動塊6之未圖示的讀取頭構成，加工進给量檢測手段56之檢測訊號係朝控制器40之輸入介面50輸入。
分度進给量檢測手段60係由延著導軌24配設之線性標度58、及配設於第2滑動塊16之未圖示的讀取頭構成，分度進给量檢測手段60之檢測訊號係朝控制器40之輸入介面50輸入。
以攝像單元38所攝像之圖像訊號亦朝控制器40之輸入介面50輸入。另一方面，由控制器40之輸出介面52朝脈衝馬達10、脈衝馬達20、雷射光束照射單元34等輸出控制訊號。
參照圖3，顯示有作為本發明之燒蝕加工方法之加工對象的分割成個別元件之附有DAF(晶片附著膜)之半導體晶圓W的立體圖。DAF13係在由環氧樹脂、壓克力樹脂、合成橡膠、聚亞醯胺(polyimide)等所成之基材上配設壓克力系或橡膠系之糊層所構成。
在本實施型態之DAF(晶片附著膜)之燒蝕加工方法，首先是作為前置步驟，於藉由先切割法分割成個別元件D之晶圓W的背面貼著DAF13，將DAF13貼著於受環狀框F所支持之黏著膠帶T。
接著，將已貼著在晶圓W的表面之保護膠帶予以剝離。此狀態顯示於圖3。11為分割溝。參照圖4，顯示有圖3所示之附有DAF之晶圓W的截面圖。
本實施型態之DAF13之燒蝕加工方法首先是實施液狀樹脂塗佈步驟，於DAF13之應進行燒蝕加工之區域塗佈液狀樹脂，且前述液狀樹脂混有對雷射光束之波長具有吸收性之氧化物之微粉末。
例如，如圖5所示，於液狀樹脂供給源76貯藏著混有對雷射光束之波長(例如355nm)具有吸收性之氧化物之微粉末(例如TiO2)之PVA(聚乙烯醇)等液狀樹脂80。
藉由驅動幫浦78，貯藏於液狀樹脂供給源76之液狀樹脂80從供給噴嘴74朝晶圓W的表面供給，於晶圓W的表面及通過分割溝11於DAF13的表面塗佈液狀樹脂80。
然後，使該液狀樹脂80硬化而形成混有對雷射光束之波長具有吸收性之氧化物之微粉末的保護膜82。於分 割溝11露出之DAF13上亦形成該保護膜82。
往晶圓W的表面上的液狀樹脂80的塗佈方法可採用例如一面使晶圓W旋轉一面塗佈之旋塗法。於本實施型態是採用TiO2來作為混入PVA(聚乙烯醇)、PEG(聚乙二醇)等液狀樹脂中的氧化物之微粉末。
於圖4所顯示之實施形態雖然是將含有氧化物之微粉末之液狀樹脂80朝晶圓W的全面塗佈而形成保護膜82，但亦可將液狀樹脂80僅塗佈於應進行燒蝕加工之區域(亦即，於分割溝11露出之DAF13)上而形成保護膜。混入液狀樹脂之氧化物之微粉末之平均粒徑宜比雷射光束之點徑小，例如宜比10μm還小。
參照圖6，顯示有ZnO、TiO2、CeO2、Fe2O3之分光穿透率。由該圖表可理解到，若將使用於燒蝕加工之雷射光束的波長設定於355nm以下，則雷射光束幾乎都被該等金屬氧化物的微粉末吸收。
除了圖6所顯示之金屬氧化物，由於CuO、Cu2O及MgO亦具有相同傾向之分光穿透率，故可採用作為混入液狀樹脂之微粉末。因此，作為混入液狀樹脂之氧化物之微粉末，可採用TiO2、Fe2O3、ZnO、CeO2、CuO、Cu2O、MgO之任一者。
於表1顯示該等金屬氧化物之消光係數(消衰係數)k及熔點。附帶一提，消光係數k與吸收係數α之間具有α=4 π k/λ的關係。在此，λ為使用之光的波長。
在實施液狀樹脂塗佈步驟而於晶圓W的表面及於分割溝11露出之DAF13表面形成保護膜82後，實施利用燒蝕加工之雷射加工步驟。在該雷射加工步驟中，如圖7所示，將對保護膜82中之氧化物之微粉末具有吸收性之波長(例如355nm)之脈衝雷射光束37以聚光器36聚光而通過分割溝11照射於DAF13的表面，並將夾頭工作台28朝圖7之箭頭X1方向以預定之加工進給速度移動，如圖8所示，沿著分割溝13藉由燒蝕加工於DAF13形成雷射加工溝15。
將保持著晶圓W之夾頭工作台28朝Y軸方向分度進給，並通過於第1方向伸長之全部之分割溝11藉由燒蝕加工於DAF13形成同樣之雷射加工溝15。
接著，在將夾頭工作台28轉動90度後，通過朝與第1方向正交之第2方向伸長之全部之分割溝11藉由燒蝕加工於DAF13形成同樣之雷射加工溝15，將DAF13對應元件D予以分割。
本實施型態之雷射加工條件之設定為例如下述者。
光源：YAG脈衝雷射
波長：355nm(YAG雷射之第3諧波)
平均輸出：0.5~1.0W
反覆頻率：10~200kHz
點徑：ψ1~10μm
進给速度：10~100mm/秒
接著，參照圖9及圖10，說明本發明第2實施型態之DAF13之燒蝕加工方法。本實施型態將DAF13貼著於受環狀框F支持之黏著膠帶T。
然後，與上述第1實施型態同樣地，將貯藏於液狀樹脂供給源76之液狀樹脂80從供給噴嘴74朝DAF13的表面供給，於DAF13的表面塗佈液狀樹脂80。然後，使該液狀樹脂80硬化而於DAF13上形成混有對雷射光束之波長具有吸收性之氧化物之微粉末的保護膜82。
接著，如圖10所示，將對保護膜82中之氧化物之微粉末具有吸收性之波長(例如355nm)之脈衝雷射光束37以聚光器36聚光而照射於DAF13的表面，並將夾頭工作台28朝圖10之箭頭X1方向以預定之加工進給速度移動，於DAF13形成雷射加工溝84。
將保持著DAF13之夾頭工作台28朝Y軸方向以例如半導體晶圓W之切割道間距逐漸分度進給，並形成於第1方向伸長之複數個雷射加工溝84。
接著，在將夾頭工作台28轉動90度後，形成朝與伸長於第1方向之雷射加工溝84正交之第2方向伸長之同樣之雷射加工溝84，將DAF13分割成與半導體晶圓W之元件D對應之形狀。如此分割之DAF13係貼著於元件D的背面。
根據上述之第1及第2實施型態之DAF13之燒蝕加工方法，係於DAF13的表面塗佈液狀樹脂80而形成保護膜82後，實施燒蝕加工，且前述液狀樹脂80混有對雷射光束之波長具有吸收性之氧化物之微粉末，因此，藉由雷射光束之能量被氧化物之微粉末吸收達到帶隙能量、原子之結合力被破壞而連鎖地於DAF13施行燒蝕加工，可對應元件D而確實地將DAF13予以分割。混入液狀樹脂中之氧化物之微粉末是作為加工促進劑發揮作用。
2‧‧‧雷射加工裝置
4‧‧‧靜止基台
6‧‧‧第1滑動塊
8‧‧‧滾珠螺桿
10‧‧‧脈衝馬達
11‧‧‧分割溝
12‧‧‧加工進给手段
13‧‧‧DAF(晶片附著膜)
14‧‧‧導軌
15‧‧‧雷射加工溝
16‧‧‧第2滑動塊
18‧‧‧滾珠螺桿
20‧‧‧脈衝馬達
22‧‧‧分度進给手段
24‧‧‧導軌
26‧‧‧圓筒支持構件
28‧‧‧夾頭工作台
30‧‧‧夾具
32‧‧‧柱
34‧‧‧雷射光束照射單元
35‧‧‧殼體
36‧‧‧聚光器
37‧‧‧脈衝雷射光束
38‧‧‧攝像單元
40‧‧‧控制器
42‧‧‧中央處理裝置
44‧‧‧唯讀記憶體
46‧‧‧隨機存取記憶體
48‧‧‧計數器
50‧‧‧輸入介面
52‧‧‧輸出介面
54‧‧‧線性標度
56‧‧‧加工進给量檢測手段
58‧‧‧線性標度
60‧‧‧分度進给量檢測手段
62‧‧‧雷射振盪器
64‧‧‧反覆頻率設定手段
66‧‧‧脈衝寬調整手段
68‧‧‧功率調整手段
70‧‧‧鏡子
72‧‧‧聚光用物鏡
74‧‧‧供給噴嘴
76‧‧‧液狀樹脂供給源
78‧‧‧幫浦
80‧‧‧液狀樹脂
82‧‧‧保護膜
84‧‧‧雷射加工溝
D‧‧‧元件
F‧‧‧環狀框
S1‧‧‧第1切割道
S2‧‧‧第2切割道
T‧‧‧黏著膠帶
W‧‧‧晶圓
圖1係適於實施本發明之燒蝕加工方法之雷射加工裝置的立體圖。
圖2係雷射光束照射單元的方塊圖。
圖3係透過黏著膠帶而藉由環狀框支持之狀態之分割成個別元件之附有DAF之晶圓的立體圖。
圖4係圖3所示之附有DAF之晶圓的截面圖。
圖5係顯示第1實施型態之液狀樹脂塗佈步驟的立體圖。
圖6係顯示各種金屬氧化物之分光穿透率的圖表。
圖7係顯示關於第1實施型態之DAF之燒蝕加工步驟的立體圖。
圖8係顯示DAF沿著分割溝被分割之狀態之圖7所示之附有DAF之晶圓的截面圖。
圖9係顯示利用第2實施型態之DAF之液狀樹脂塗佈步驟的立體圖。
圖10係顯示關於第2實施型態之DAF之燒蝕加工步驟的立體圖。
11‧‧‧分割溝
13‧‧‧DAF(晶片附著膜)
74‧‧‧供給噴嘴
76‧‧‧液狀樹脂供給源
78‧‧‧幫浦
80‧‧‧液狀樹脂
82‧‧‧保護膜
F‧‧‧環狀框
T‧‧‧黏著膠帶
W‧‧‧晶圓

Claims (2)

  1. 一種晶片附著膜之燒蝕加工方法，係於晶片附著膜照射雷射光束而施行燒蝕加工，前述晶片附著膜是貼附於已被分割成個別元件之晶圓的背面，該晶片附著膜之燒蝕加工方法包含以下步驟：保護膜形成步驟，係至少於應進行燒蝕加工之晶片附著膜之區域塗佈液狀樹脂，且前述液狀樹脂混有對雷射光束之波長具有吸收性之氧化物之微粉末，而形成含有該微粉末之保護膜；及雷射加工步驟，係於實施了該保護膜形成步驟後，於形成有該保護膜之該晶片附著膜之區域沿著已被分割成個別元件之晶圓的分割溝照射雷射光束而對該晶片附著膜施行燒蝕加工，以將該晶片附著膜對應個別元件而分割，前述氧化物之微粉末之平均粒徑比雷射光束之點徑小，且雷射光束之點徑為10μm以下，前述雷射光束之波長為355nm以下，前述氧化物之微粉末包含從由Fe2O3、ZnO、TiO2、CeO2、CuO、Cu2O及MgO所構成之群中選擇出之金屬氧化物。
  2. 如申請專利範圍第1項之晶片附著膜之燒蝕加工方法，其中更包含支持步驟，係在藉由先切割法分割成個別元件之晶圓的背面貼附晶片附著膜，並將該晶片附著膜貼附於外周部被環狀框支持的黏著膠帶，以將晶圓及該晶片附著膜以該環狀框支持。
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JP5839923B2 (ja) * 2011-10-06 2016-01-06 株式会社ディスコ パシベーション膜が積層された基板のアブレーション加工方法
JP5888927B2 (ja) 2011-10-06 2016-03-22 株式会社ディスコ ダイアタッチフィルムのアブレーション加工方法
JP5839390B2 (ja) * 2011-10-06 2016-01-06 株式会社ディスコ アブレーション加工方法
JP5701465B2 (ja) * 2012-12-21 2015-04-15 株式会社新川 フリップチップボンダ及びボンディングステージの平坦度並びに変形量補正方法
JP2014124646A (ja) * 2012-12-25 2014-07-07 Disco Abrasive Syst Ltd レーザ加工方法および微粒子層形成剤
US9381548B2 (en) 2013-01-02 2016-07-05 The Boeing Company Systems for removing lubricants from superplastic-forming or hot-forming dies
US9272312B1 (en) * 2013-01-02 2016-03-01 The Boeing Company Methods and systems for removing lubricants from superplastic-forming or hot-forming dies
JP6399923B2 (ja) * 2014-12-24 2018-10-03 株式会社ディスコ 板状物のレーザー加工方法
JP6401043B2 (ja) * 2014-12-24 2018-10-03 株式会社きもと レーザーダイシング用補助シート
JP6837709B2 (ja) * 2016-10-14 2021-03-03 株式会社ディスコ デバイスウェーハのレーザ加工方法
JP6831246B2 (ja) * 2017-01-11 2021-02-17 株式会社ディスコ ウエーハの加工方法
JP2018125479A (ja) * 2017-02-03 2018-08-09 株式会社ディスコ ウェーハの加工方法
CN108480849A (zh) * 2018-05-02 2018-09-04 江苏匠心信息科技有限公司 一种石墨烯芯片接合薄膜的烧蚀加工方法
KR102563869B1 (ko) 2018-06-05 2023-08-04 (주)이녹스첨단소재 대전방지 다이 어태치 필름, 이의 제조방법 및 이를 이용한 웨이퍼 다이싱 공정
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004330236A (ja) * 2003-05-07 2004-11-25 Mitsubishi Gas Chem Co Inc レーザー孔あけ用補助シート
JP2005353935A (ja) * 2004-06-14 2005-12-22 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2010207723A (ja) * 2009-03-10 2010-09-24 Disco Abrasive Syst Ltd 樹脂膜形成装置

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0672250B2 (ja) * 1988-01-25 1994-09-14 株式会社鈴木商館 易可剥性レーザー光反射防止コーティング剤
JPH10305420A (ja) 1997-03-04 1998-11-17 Ngk Insulators Ltd 酸化物単結晶からなる母材の加工方法、機能性デバイスの製造方法
JP4109823B2 (ja) 2000-10-10 2008-07-02 株式会社東芝 半導体装置の製造方法
DE10202881B4 (de) * 2002-01-25 2007-09-20 Infineon Technologies Ag Verfahren zur Herstellung von Halbleiterchips mit einer Chipkantenschutzschicht, insondere für Wafer Level Packaging Chips
NL1022081C2 (nl) * 2002-12-04 2004-06-07 Dsm Nv Laserlicht absorberend additief.
JP2004188475A (ja) 2002-12-13 2004-07-08 Disco Abrasive Syst Ltd レーザー加工方法
JP2005019525A (ja) * 2003-06-24 2005-01-20 Disco Abrasive Syst Ltd 半導体チップの製造方法
JP4422463B2 (ja) 2003-11-07 2010-02-24 株式会社ディスコ 半導体ウエーハの分割方法
JP4471632B2 (ja) * 2003-11-18 2010-06-02 株式会社ディスコ ウエーハの加工方法
DE102004018547A1 (de) 2004-04-14 2005-02-03 Basf Ag Verfahren zum Schweißverbinden von Kunststoffteilen mit Hilfe von Laserstrahlung
JP4571850B2 (ja) 2004-11-12 2010-10-27 東京応化工業株式会社 レーザーダイシング用保護膜剤及び該保護膜剤を用いたウエーハの加工方法
JP4786997B2 (ja) 2005-10-25 2011-10-05 株式会社ディスコ レーザー加工装置
US7541213B2 (en) 2006-07-21 2009-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI450387B (zh) 2006-09-29 2014-08-21 Semiconductor Energy Lab 半導體裝置的製造方法
US7767595B2 (en) 2006-10-26 2010-08-03 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
TWI419268B (zh) 2007-09-21 2013-12-11 Teramikros Inc 半導體裝置及其製造方法
JP2009123835A (ja) * 2007-11-13 2009-06-04 Disco Abrasive Syst Ltd 半導体デバイスの製造方法
JP2009231632A (ja) 2008-03-24 2009-10-08 Fujitsu Microelectronics Ltd 半導体装置の製造方法
JP2009272421A (ja) * 2008-05-07 2009-11-19 Disco Abrasive Syst Ltd デバイスの製造方法
JP4215816B1 (ja) * 2008-05-26 2009-01-28 日本カラリング株式会社 レーザーマーキング多層シート
US8211781B2 (en) 2008-11-10 2012-07-03 Stanley Electric Co., Ltd. Semiconductor manufacturing method
JP2010194757A (ja) 2009-02-23 2010-09-09 Nippon Kararingu Kk 透明レーザーマーキング多層シート
US8609512B2 (en) 2009-03-27 2013-12-17 Electro Scientific Industries, Inc. Method for laser singulation of chip scale packages on glass substrates
US8114572B2 (en) * 2009-10-20 2012-02-14 Eastman Kodak Company Laser-ablatable elements and methods of use
US9059187B2 (en) * 2010-09-30 2015-06-16 Ibiden Co., Ltd. Electronic component having encapsulated wiring board and method for manufacturing the same
JP5839923B2 (ja) * 2011-10-06 2016-01-06 株式会社ディスコ パシベーション膜が積層された基板のアブレーション加工方法
JP5888927B2 (ja) 2011-10-06 2016-03-22 株式会社ディスコ ダイアタッチフィルムのアブレーション加工方法
JP2014124646A (ja) * 2012-12-25 2014-07-07 Disco Abrasive Syst Ltd レーザ加工方法および微粒子層形成剤
JP6178077B2 (ja) * 2013-01-23 2017-08-09 株式会社ディスコ ウエーハの加工方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004330236A (ja) * 2003-05-07 2004-11-25 Mitsubishi Gas Chem Co Inc レーザー孔あけ用補助シート
JP2005353935A (ja) * 2004-06-14 2005-12-22 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2010207723A (ja) * 2009-03-10 2010-09-24 Disco Abrasive Syst Ltd 樹脂膜形成装置

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