CN103069582A - 用于具有多种磷光体的选择泵浦led的系统和方法 - Google Patents

用于具有多种磷光体的选择泵浦led的系统和方法 Download PDF

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CN103069582A
CN103069582A CN2011800402216A CN201180040221A CN103069582A CN 103069582 A CN103069582 A CN 103069582A CN 2011800402216 A CN2011800402216 A CN 2011800402216A CN 201180040221 A CN201180040221 A CN 201180040221A CN 103069582 A CN103069582 A CN 103069582A
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奥雷利安·J·F·戴维
特洛伊·特罗蒂尔
弗兰克·M·斯特兰卡
迈可尔·R·克拉梅什
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Soraa Inc
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Abstract

描述了具有多种磷光体的LED泵浦光。使用发射在紫色和/或紫外波长下的辐射的LED来泵浦发射其他颜色的磷光体材料。设置在不同波长范围内操作的LED以减少光的再吸收并提高光输出效率。

Description

用于具有多种磷光体的选择泵浦LED的系统和方法
相关申请
本申请要求于2010年8月19日提交的美国临时专利申请号61/375,097和于2011年6月28日提交的美国临时专利申请号61/502,212的优先权，由此出于所有目的将其两者通过引用结合于此。
背景技术
本发明涉及照明系统，并且具体地涉及具有多种磷光体（multiplephosphor）的发光二极管（LED）泵浦光。
固态照明是已知的。固态照明依赖于半导体材料以例如通过发光二极管产生光。其中，红色LED已知并使用铝铟镓磷化物或AlInGaP半导体材料。最近，Shuji Nakamura首先使用InGaN材料以产生发射蓝色光的LED。蓝色LED导致其他创新如固态白色发光和蓝色激光二极管。
已经提出并证明了基于InGaN材料系统的高强度紫外（UV）、蓝色、和绿色LED。通常在UV-紫色中效率最高，但当发射波长增加为蓝色或绿色时效率降低。不幸的是，实现高强度、高效率的基于InGaN的绿色LED存在问题。此外，基于InGaN的LED昂贵并且难以以有效的方式大范围地生产。虽然获得了成功，但是必须改进固态照明技术以充分发挥它们的潜能。
发明内容
本发明提供了具有多种磷光体的选择波长的泵浦LED光。在不同的实施方式中，使用发射在紫色和/或紫外波长下的辐射的LED来泵浦发射不同频率的光的磷光体材料。泵浦LED的特征在于，在正常操作下具有约405nm至430nm的峰值发射波长。它们至少连同在超过约405nm波长下具有强吸收的蓝色磷光体一起使用。在一些实施方式中，在不同波长范围内操作的LED以组合设置以减少辐射再吸收并提高光输出效率。
本发明提供了一种光学装置，所述光学装置包括安装构件（mountingmember）和覆盖（上覆，overlying）安装构件的一部分的至少一个发光二极管。该LED包括具有表面区域的含镓和氮的基板和覆盖表面区域的含镓和氮的缓冲层。有源区域发射峰值波长在从约405nm至约430nm范围内的电磁辐射。LED包括电触点（接触部）以向结区域（连接区域，junctionregion）提供电流。该装置另外包括在粘合剂材料内的三种磷光体材料的混合物。磷光体材料的混合物被设置在LED附近范围内并与来自LED的电磁辐射相互作用以将电磁辐射转换为在约440至650纳米之间的波长范围。在另一个实施方式中，该装置包括在LED装置附近范围内在比约405nm更长的波长下具有强吸收的蓝色磷光体材料。有源区域被构造成发射其峰值在约405至430纳米范围内的电磁辐射，同时在从约100°C至约150°C的操作温度范围内在至少100A/cm2的电流密度下维持约70%和更高的内量子效率（internal quantum efficiency）。
附图说明
图1示出在不同波长下发射的LED的效率特性；
图2和图3示出了蓝色磷光体的吸收特性和取决于LED的发射波长的相应白色LED性能；
图4示出了峰值发射在约405-430nm范围内的泵浦蓝色、红色、和绿色磷光体的LED。
图5示出了在450nm（左）和420nm（右）下发射的多量子阱LED中散布的载流子；
图6示出了构造成阵列的泵浦LED；
图7示出了构造成具有像素化（pixelated）磷光体组成的阵列的泵浦LED；
图8示出了构造成具有两种LED发射波长的阵列的泵浦LED；和
图9是示出根据本发明实施方式的双磷光体紫色泵浦白色LED的LED发射光谱简化图。
具体实施方式
本发明涉及照明系统并涉及具有多种磷光体的LED泵浦光的设备（provision）。使用发射在紫色和/或紫外波长下的辐射的LED来泵浦发射不同颜色的磷光体材料。优选地，泵浦LED具有在正常操作条件下约405至430nm的峰值发射波长。
如上面所提到的，常规的LED光源通常不充分。例如，产生高显色指数（CRI）的白色LED光的最常用的方法之一由在440-470nm范围内（通常称为泵浦LED）发射的LED装置组成，其激发两种磷光体：黄色/绿色磷光体和红色磷光体。这种方法是方便的，因为一些黄色/绿色磷光体，如Ce:YAG，具有高量子效率。
不幸地，这种方法也有限制。基于YAG的磷光体仅能够在约460nm的窄光谱范围内被有效激发，限制了可以使用的泵浦LED的波长范围。虽然可以在低电流密度下在这样的波长下产生高内量子效率（IQE）的LED装置，但它们的IQE在高电流密度下迅速下降。这是由于以下两个作用：（a）较大压电场（piezoelectric field）的存在，其减少了载流子重叠并因此增加了载流子的寿命，将IQE曲线移动至较低的电流密度（参考（ref））；和（b）与约445nm下发射的厚有源区域相关的挑战（由于厚InGaN层的应变相关生长限制和在多量子阱系统中载流子散步困难两者引起的）。
图1示出了在不同波长下发射的LED的效率行为。与长波长LED（445nm和以上）相比，短波长LED（415-430nm）在较高的载流子密度下维持效率。图1获自“Influence of polarization fields on carrier lifetime andrecombination rates in InGaN-based light-emitting diodes”,A.David et al,Appl.Phys.Lett.97,033501(2010)，其描述了在较长波长的LED中偏振场的增强。论文“Carrier distribution in(0001)InGaN/GaN multiple quantumwell light-emitting diodes”,A.David et al,Appl.Phys.Lett.92,053502(2008)，讨论了450nm-泵浦LED中在量子阱之间散布载流子的困难。
来自泵浦LED的蓝色光对白色光谱有贡献。因此，通过磷光体发射的蓝色光的量需要良好的控制以实现给定的CCT。在磷光体组成/装载中需要解释泵浦LED的波长的变化。当制造白色LED时，解释波长差异可以是一项具有挑战性的任务。
对于440-nm泵浦LED的现有技术结果可以在论文“White lightemitting diodes with super-high luminous efficacy”,Y.Narukawa et al,J.Phys.D43,354002(2010)中找到。在室温和约100A/cm2的电流密度下，报道了65%的外量子效率。假设在室温和100°C的结温度之间的约90%的提取效率（extraction efficiency）和约10%的性能下降，这对应于在100A/cm2和100°C下约65%的IQE。
另一个传统的方法在于使用其发射峰值在395-405nm范围内的泵浦LED来泵浦三个或四个磷光体的系统。这是有利的，因为与445nm泵浦LED相比，400nm泵浦LED通常在更高的电流密度下保持更高的性能，这可能是由于较低的压电场和厚的有源区域引起的。
使用其最终光谱受到最终光谱中发射器（发射极）波长存在与否的影响最小（在颜色或亮度方面）的LED发射器提供了在驱动电流和温度下范围内非常稳定的性能。用于操作的装置范围的颜色稳定的磷光体材料的适当选择（如405nm发射器的光谱权重（spectral weight））仅为450nm的发射器的1.5%。420nm发射器的光谱权重仍仅为450nm发射器的10%。成品的磷光体转换LED的颜色和通量的稳定性相对于传统蓝色泵浦装置显著增加，其中最终光谱的多达20%由在450nm下的基础发射器组成。
靶向最终光谱中一定量的发射器光泄漏的需要的消除也在制造环境中提供了改进的得色量（color yield）。对于约405nm至430nm泵浦装置的制造磷光体沉积过程可以接受更多的工艺变化而不牺牲大容量彩色重复性。而这提供了以更高的生产能力进行制造过程而不会损失重复性。
与双组分颜色系统相比，三种或更多种组成颜色（芯片发射和至少两种磷光体）的使用为磷光体转换LED装置提供了较大的可调的色域。可以获得大范围的可调颜色和显色指数。双颜色组分白色LED就普朗克曲线（Planckian curve）仅具有一个的可能的横截面（一个点以实现平衡的白色光谱）而三个或更多个颜色系统提供了沿着普朗克曲线的无限可调性。
然而，这种方法受到各种限制：
1.在泵浦波长和磷光体波长之间的斯托克斯损失（Stokes loss）较大，因此在磷光体下变频过程中将损失更多的能量。400nm泵浦LED的相对较大的带隙导致较高的操作电压。400nm泵浦LED的有源区域中的降低的载流子限制使载流子更容易逃逸，并因此降低了高温性能。与在445nm下相比，大多数材料在400nm下具有显著更大的吸收（这是通常用于LED中的高反射率的金属如Al和Ag、硅酮、一些如GaN或SiC的基板、和Au丝焊的情况。），其降低了光提取效率。
2.没有集中开发用于380-430nm激发光的磷光体。这使得可用的磷光体材料的性能水平落后于采用使用材料诸如Y3Al5O12:Ce3+（YAG-黄色）和CaAlSiN:Eu2+（红色）的450nm泵浦LED的LED制造商所拥有的现有技术磷光体性能，其具有应用于其改进的时间和压力。
3.由于现有技术磷光体材料性能的这种偏移（offset），并非所有的可用的磷光体均可用于高性能LED装置。主要的实例是蓝色磷光体，其不适合用于所有芯片发射波长。图2中示出了两个蓝色发射磷光体的吸收特性。垂直线表示相对于这两个磷光体吸收曲线的405nm和420nm发射器的位置。虽然这两种材料在405nm下的吸收强度类似，但它们在420nm下明显不同。第一磷光体的吸收强度的这种减少显著地影响具有较长波长发射器的装置性能。在图3中示出这种性能变化。
本发明提供了具有高性能的白色LED光源。尤其是，本发明提供了高-CRI白色LED的新方法。例如，白色LED光源包括其峰值发射在约405nm至430nm范围内的一个或多个泵浦LED和三种或更多种磷光体（如蓝色、绿色和红色）的系统。通过磷光体发射产生基本上白色的光谱。
本发明的一个优点是由于适度的应变和压电场，约405nm至430nm的范围内的泵浦LED可以在高载流子密度下显示非常高的IQE（与400nm泵浦LED类似）。另一方面，有源区域中载流子限制显著提高，使得不会损害高温性能。与400nm LED相比，较低带隙也使得启动较低的正向电压。因此，从泵浦LED的性能出发，约405nm至430nm的范围是最佳的。对于这种LED（在100A/cm2的电流密度和100°C的结温度下）的高IQE性能可以优于70%并且甚至超过90%。这与如现有技术中描述的在440nm下发射的现有技术LED的约65%形成对比。
此外，在400nm和约405nm至430nm之间大多数材料中的光学吸收显著降低，产生了整体较高的光提取效率。此外，如上面所解释的，使用三种或更多种磷光体以产生白光在颜色控制和过程稳定性方面有利。蓝色磷光体在约405nm至430nm的范围内可获得有强吸收并且有高量子效率。在此波长范围内具有强吸收的蓝色发射磷光体的一些实例是BaMgAl10O17:Eu2+、Sr10(PO4)6Cl2:E、LaAl(Si6-zAlz)N10-zOz:Ce3+、a-赛隆:Ce3+（a-硅铝氧氮陶瓷:Ce3+，a-Sialon:Ce3+）、(Y,La)-Si-O-N:Ce3+、Gd1-xSr2+xAlO5-xFx:Ce3+。与400nm泵浦LED相比，斯托克斯损失也减轻。
图4示出了本发明的一个实施方式，其中，其峰值发射在约405nm至430nm的范围内的LED泵浦蓝色、红色和绿色磷光体。如在图4中所示，在基板或基台（submount）上提供泵浦LED源。例如，泵浦LED源发射在405nm至430nn波长下的辐射。泵浦LED源设置在磷光体材料的混合物中，其吸收由LED源发射的辐射。磷光体材料由泵浦LED激发并发射蓝色、绿色和红色的光。在一个优选的实施方式中，通过来自磷光体的辐射的组合，磷光体的混合物特别适合于发射白色光。将磷光体材料的混合物设置在对泵浦LED源和磷光体发射的光两者均基本上透明的密封剂中。
取决于应用，该密封剂可以包括各种类型的材料。在一个优选的实施方式中，专门配置密封剂以提高光提取效率。例如，密封剂材料可以包含聚合物物质。在一个优选的实施方式中，泵浦LED源发射在从约405nm至430nm的波长范围内的辐射并泵浦混合在一起的三种磷光体（例如，蓝色、绿色和红色磷光体），并且磷光体混合物将大部分泵浦LED源的光转换为波长较长的光。当然，磷光体混合物可以包含额外的磷光体，如可以添加琥珀色磷光体以提高CRI。
在各种实施方式中，由于温度的变化由LED发射的波长发生改变。例如，在室温下泵浦LED发射在约398nm波长下的辐射。当温度升高至约120°C时，泵浦LED发射约405nm的辐射。通常，高电流和/或高温是波长偏移的主要原因。例如，对于操作温度每增加23°C，由泵浦LED所发射的辐射的波长增加1nm。本发明的各种实施方式中使用的密封剂和磷光体材料可以补偿波长偏移。
图5示出了在450nm（左）和420nm（右）发射的多量子阱（MQW）LED中散布的载流子。在450nm的发射方案中，能量势垒（energy barrier）较大，其可阻碍量子阱之间空穴的散布。如所示的，电子或多或少地均匀散布，而空穴不是。与此相反，在420nm的发射方案中，能量势垒较低并且因此提高了空穴散布，从而增加了有源区域的有效容积。本发明的实施方式实现更好的载流子散布。更具体地，与450nm泵浦LED相比，可以降低载流子限制，其使得载流子能够更好地散布在MQW系统中。因此，可以采用厚的有源区域（例如，大于10nm厚或大于50nm厚）并跨越该有源区域有效地注入载流子，如图5中示出。
图6示出了本发明的一个实施方式，其中五个泵浦LED被设置在阵列中。在此实施中，LED在约405nm至430nm下发射。LED被配置有特别制造用于色彩转换的磷光体混合物。如上所述，磷光体混合物包含对泵浦LED发射的光具有高吸收的磷光体材料。例如，磷光体混合物包含下列材料中的一种或多种：BaMgAl10O17:Eu2+、Sr10(PO4)6Cl2:E、LaAl(Si6-zAlz)N10-zOz:Ce3+、a-赛隆:Ce3+、(Y,La)-Si-O-N:Ce3+、Gd1-xSr2+xAlO5-xFx:Ce3+。制备磷光体混合物用于将来自泵浦LED的光转换为其它颜色，如红色、绿色和/或蓝色的光。当将不同颜色的光组合时，优选产生基本上白色的光。将磷光体材料的混合物设置在密封剂中，所述密封剂对泵浦-LED和磷光体发射的光两者基本上透明。在一个优选的实施方式中，密封剂被专门构造成提高光提取效率并且由聚合物物质形成。
图7示出本发明的一个实施方式，其中泵浦LED被设置在阵列中，并且磷光体组成以像素化配置空间地变化。此处，单独的空间区域执行至红色、绿色、和蓝色的光的转换。如图7中所示，五个LED被设置在构造成泵浦磷光体材料的阵列中。不同颜色的单色磷光体材料吸收由LED发射的辐射并重新发射与磷光体材料相关的颜色的光。磷光体材料以像素化的方式设置在LED之上。专门创建像素化图案以产生发射的混合，其组合产生颜色基本上为白色的光。
在一个优选的实施方式中，LED发射基本上相同颜色的辐射（例如，波长约405nm至430nm），并且来自LED的辐射泵浦位于不同空间位置中的单色磷光体材料。而彩色的磷光体材料发射彩色的光。例如，如图7中所示，磷光体材料分别发射红色、绿色和蓝色的光。在图7所示的构造中，基于所需要的颜色和所使用的LED的类型，泵浦LED和/或磷光体的类型跨阵列可以变化。
图8示出本发明的一个实施方式，其中以阵列设置泵浦LED，并且采用两种LED发射波长。短波长LED（约405nm至430nm）泵浦红色和绿色磷光体，而较长波长LED（440nm至460nm）发射蓝色的光。如图8所示，5个LED装置形成位于基板或基台上的LED阵列。更具体地，中间的LED装置发射蓝色的光（例如，约440nm至460nm的波长），而其它LED装置发射基本上在紫色（例如，约405nm至430nm）波长范围内的辐射。将紫色LED装置设置在有色的磷光体材料中，其中LED装置泵浦发射有色的光，如红色光的磷光体材料。类似地，绿色磷光体材料，在吸收基本上紫色的辐射后，发射绿色光。蓝色的LED装置不设置在磷光体材料中，并且作为结果，直接发射由蓝色LED装置产生的蓝色光。
取决于应用，可以使用多个泵浦LED连同不构造成泵浦磷光体材料的蓝色或红色LED组合来以阵列几何设置LED。应当理解，图8所示的LED的设置可以帮助减少光吸收。例如，相对于400nm，在约405nm至430nm下模内吸收（inter-die absorption）减少（因为基板吸收较低），其是使用较长波长泵浦LED的另外的优点。
磷光体材料和LED装置的不同设置使得能够获得不同颜色的光。在一个优选的实施方式中，LED装置生长在非极性或半极性基板上。在一些实施方式中，LED装置可以生长在低位错密度基板（<1×107位错/cm2）上以使得在高电流密度和高温下能够可靠操作。
波长转换材料可以是陶瓷或半导体颗粒磷光体、陶瓷或半导体板磷光体、有机或无机的下变频器、上变频器（反斯托克斯）、纳米颗粒和提供波长转换的其它材料。以下列出了一些实例：
(Srn,Ca1-n)10(PO4)6*B2O3:Eu2+（其中0≤n≤1）
(Ba,Sr,Ca)5(PO4)3(Cl,F,Br,OH):Eu2+,Mn2+
(Ba,Sr,Ca)BPO5:Eu2+,Mn2+
Sr2Si3O8*2SrCl2:Eu2+
(Ca,Sr,Ba)3MgSi2O8:Eu2+,Mn2+
BaAl8O13:Eu2+
2SrO*0.84P2O5*0.16B2O3:Eu2+
(Ba,Sr,Ca)MgAl10O17:Eu2+,Mn2+
K2SiF6:Mn4+
(Ba,Sr,Ca)Al2O4:Eu2+
(Y,Gd,Lu,Sc,La)BO3:Ce3+,Tb3+
(Ba,Sr,Ca)2(Mg,Zn)Si2O7:Eu2+
(Mg,Ca,Sr,Ba,Zn)2Si1-xO4-2x:Eu2+（其中0≤x≤0.2）
(Sr,Ca,Ba)(Al,Ga)2S4:Eu2+
(Ca,Sr)8(Mg,Zn)(SiO4)4Cl2:Eu2+,Mn2+
Na2Gd2B2O7:Ce3+,Tb3+
(Sr,Ca,Ba,Mg,Zn)2P2O7:Eu2+,Mn2+
(Gd,Y,Lu,La)2O3:Eu3+,Bi3+
(Gd,Y,Lu,La)2O2S:Eu3+,Bi3+
(Gd,Y,Lu,La)VO4:Eu3+,Bi3+
(Ca,Sr)S:Eu2+,Ce3+
(Y,Gd,Tb,La,Sm,Pr,Lu)3(Sc,Al,Ga)5-nO12-3/2n:Ce3+（其中0≤n≤0.5）
ZnS:Cu+,Cl-
(Y,Lu,Th)3Al5O12:Ce3+
ZnS:Cu+,Al3+
ZnS:Ag+,Al3+
ZnS:Ag+,Cl-
(Ca,Sr)Ga2S4:Eu2+
SrY2S4:Eu2+
CaLa2S4:Ce3+
(Ba,Sr,Ca)MgP2O7:Eu2+,Mn2+
(Y,Lu)2WO6:Eu3+,Mo6+
CaWO4
(Y,Gd,La)2O2S:Eu3+
(Y,Gd,La)2O3:Eu3+
(Ba,Sr,Ca)nSinNn:Eu2+（其中2n+4=3n）
Ca3(SiO4)Cl2:Eu2+
(Y,Lu,Gd)2-nCanSi4N6+nC1-n:Ce3+，（其中0≤n≤0.5）
用Eu2+和/或Ce3+掺杂的(Lu,Ca,Li,Mg,Y)α-赛隆（SiAlON）
(Ca,Sr,Ba)SiO2N2:Eu2+,Ce3+
(Sr,Ca)AlSiN3:Eu2+
CaAlSi(ON)3:Eu2+
Sr10(PO4)6Cl2:Eu2+
(BaSi)O12N2:Eu2+
SrSi2(O,Cl)2N2:Eu2+
(Ba,Sr)Si2(O,Cl)2N2:Eu2+
LiM2O8:Eu3+其中M=（W或Mo）
在上面的清单中，可以理解，当磷光体具有两种或更多种的掺杂剂离子（即在上述磷光体的冒号之后的那些离子）时，这意味着磷光体在材料内具有那些掺杂剂离子的至少一种（但不一定是全部）。即，如本领域技术人员理解的，这种类型的表示法意味着磷光体可以包含那些特定的离子中的任何一种或全部作为制剂中的掺杂剂。
在一些实施方式中，基于量子点的磷光体用于色彩转换的用途。量子点材料是其尺寸和化学性质决定其发光特性的半导体和稀土掺杂氧化物纳米晶体家族。半导体量子点的典型的化学组成包括熟知的(ZnxCd1-x)Se[x=0..1]、(Znx,Cd1-x)Se[x=0..1]、Al(AsxP1-x)[x=0..1]、(Znx,Cd1-x)Te[x=0..1]、Ti(AsxP1-x)[x=0..1]、In(AsxP1-x)[x=0..1]、(AlxGa1-x)Sb[x=0..1]、(Hgx,Cd1-x)Te[x=0..1]闪锌矿半导体晶体结构。稀土掺杂氧化物纳米晶体的公开实例包括Y2O3:Sm3+、(Y,Gd)2O3:Eu3+、Y2O3:Bi、Y2O3:Tb、Gd2SiO5:Ce、Y2SiO5:Ce、Lu2SiO5:Ce、Y3Al5)12:Ce，但不应该排除其它简单的氧化物或正硅酸盐。
在一些实施方式中，本发明提供了双磷光体紫色泵浦白色LED，其能够用于照明。在一个特定的实施方式中，蓝绿色（cyan）磷光体和橙色磷光体与紫色泵浦LED芯片一起使用。例如，提供发射在约400～440nm的波长下的辐射的紫色芯片。在此构造中，两种磷光体的发射基本上确定了白色光的色度和颜色质量。例如，主要通过两种磷光体的混合物确定颜色，并且泵浦光的泄漏通常是最低的而且不是非常眼睛敏感的。这种方法结合了磷光体复杂性和使用双磷光体系统的简化颜色调节的成本降低的优势。此外，紫色泵浦的低眼睛敏感性确保了提供制造中具有高产量的颜色目标，这与蓝色泵浦系统的情况不同，在该情况中关于蓝色光泄漏的严密控制对于维持高容量制造中关于色度散布的严密控制是必需的。
图9是示出双磷光体紫色泵浦白色LED的发射光谱的示意图。在这个实例中，将来自Intematix公司的蓝绿色磷光体G1758TM和橙色磷光体O6040TM组合并由～420nm发射LED泵浦。可以理解，也可以使用其他类型的蓝绿色和橙色磷光体。在这种构造中其它磷光体组合和其它泵浦发射波长的选择是可能的。在图9中，相对于5%的泄漏的绝对水平，紫色泵浦LED泄漏变化+/-20%。对于所有三种情况，在约2700K的CCT下显色指数（CRI）为约83。三种光谱之间的色度的变化非常小，在u'、v'方面来自普朗克的总偏差小于0.004。流明效能为约301-305lm/Wopt。与较短波长泵浦LED相比，使用长波长泵浦芯片（例如，在420nm的情况下）的配置一个益处是，其增加光提取效率和封装效率，降低正向电压和斯托克斯损失。此外，通过避免蓝色磷光体，这种配置去除了效率损失的一个分量，降低了整体磷光体装载，并降低了成本和复杂性。
虽然上面是具体实施方式的全面描述，但是可以使用各种修改、替代构造、和等价物。因此，上面的描述和说明不应被视为限制由所附权利要求书所限定的本发明的范围。

Claims (21)

1.一种光学装置，包括：
安装构件；
提供覆盖所述安装构件的一部分的至少一个发光二极管（LED）；所述LED包括具有表面区域的含镓和氮的基板；覆盖所述表面区域的含镓和氮的缓冲层；包含有源区域的结区域，所述有源区域被构造成发射在由约405至约430纳米组成的范围内的电磁辐射；和耦接到所述结区域以提供能够引起所述有源区域发射所述电磁辐射的电流的第一电接触区域和第二电接触区域；以及
在粘合剂材料内的包含第一磷光体材料、第二磷光体材料、和第三磷光体材料的磷光体材料的混合物，所述磷光体材料的混合物被设置在所述LED附近范围内并被构造成与所述电磁辐射相互作用以基本上将在约405至430nm范围内的电磁辐射转换为在约440至650nm之间范围内的波长。
2.根据权利要求1所述的装置，其中，所述含镓和氮的基板的特征在于非极性或半极性取向。
3.根据权利要求1所述的装置，其中，所述含镓和氮的基板是本体GaN基板。
4.根据权利要求1所述的装置，其中，所述LED在至少100A/cm2和更大的电流密度下驱动。
5.根据权利要求1所述的装置，其中，所述LED具有至少50的流明/瓦效率。
6.根据权利要求1所述的装置，其中，以阵列构造提供多个LED。
7.根据权利要求6所述的装置，其中，所述LED的波长跨所述阵列而变化。
8.根据权利要求1所述的装置，其中，所述第一磷光体材料包含蓝色磷光体。
9.根据权利要求1所述的装置，其中，所述第一磷光体材料包含内量子效率能够为至少70%的蓝色磷光体。
10.根据权利要求1所述的装置，其中，所述第一磷光体材料包含吸收系数在从1到40cm-1的范围内的蓝色磷光体。
11.根据权利要求1所述的装置，其中，所述第一磷光体材料包含峰值发射波长在440nm至480nm之间范围内并且光谱FWHM为至少10nm的蓝色磷光体。
12.根据权利要求1所述的装置，其中，所述第一磷光体材料包含内量子效率为至少70%、吸收系数在从1至40cm-1的范围内、峰值发射波长在440nm至480nm之间的范围内并且光谱FWHM大于10nm的蓝色磷光体。
13.根据权利要求1所述的装置，其中，所述第一磷光体材料包含选自下述的蓝色磷光体：BaMgAl10O17:Eu2+、Sr2P2O7:Eu2+、Sr6P5BO20:Eu2+、(SrCa)2B5O9Cl:Eu2+、SR5CL(PO4)3:Eu2+、Ca2P2O7:Eu2+、ZnS:Ag,Cl、Sr10(PO4)6Cl2:E、LaAl(Si6-zAlz)N10-zOz:Ce3+、a-赛隆:Ce3+、(Y,La)-Si-O-N:Ce3+、Gd1-xSr2+xAlO5-xFx:Ce3+[x=0..6]。
14.根据权利要求1所述的装置，其中，所述磷光体混合物被平衡以产生平均显色性为至少75的普朗克曲线（du’v’<.01）之上或附近的辐射。
15.根据权利要求1所述的装置，其中，所述有源区域被构造成以至少100A/cm2的电流密度注入并在至少100°C的结温度下维持约70%和更高的内量子效率。
16.根据权利要求1所述的装置，其中，所述有源区域被构造成在至少100A/cm2的电流密度和至少85°C的温度下发射内量子效率为至少70%的在从约405至430纳米范围内的电磁辐射；因此来自所述有源区域的所述电磁辐射基本上没有小于405且大于440纳米范围的波长。
17.根据权利要求1所述的装置，其中，磷光体的组成在所述装置的水平或垂直方向上变化。
18.一种光学装置，包括：
设置在安装构件的一部分上的至少一个发光二极管（LED）；所述LED具有带有表面区域的含镓和氮的基板；覆盖所述表面区域的含镓和氮的缓冲层；包含有源区域的结区域，所述有源区域发射在由约405至430纳米组成的范围内的电磁辐射；和耦接到所述结区域以提供引起所述有源区域发射电磁辐射的电流的第一电接触区域和第二电接触区域；
设置在所述LED附近的颜色转换材料；以及
其中，所述有源区域被构造成发射从约405至430纳米的电磁辐射，同时至少减少压电场影响以引起所述有源区域输出至少100安培/平方厘米并维持至少约70%的内量子效率和从约85°C至约150°C范围的温度；并且因此所述电磁辐射基本上没有小于405且大于440纳米范围的波长。
19.根据权利要求18所述的装置，其中，所述含镓和氮的基板是本体GaN，所述本体GaN选自半极性取向、非极性取向、或极性取向。
20.根据权利要求18所述的装置，其中，所述含镓和氮的基板的特征在于小于1E7cm-2的位错密度。
21.根据权利要求18所述的装置，包括第一颜色转换材料和第二转换材料，所述第一颜色转换材料和第二颜色转换材料与不同波长有关。
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US10700244B2 (en) 2020-06-30
US9660152B2 (en) 2017-05-23
CN107256861B (zh) 2023-05-05
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WO2012024636A2 (en) 2012-02-23
US20210057615A1 (en) 2021-02-25
JP2013536583A (ja) 2013-09-19
KR20180051666A (ko) 2018-05-16
US20120043552A1 (en) 2012-02-23

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