CN102971851B - 固态图像拾取设备 - Google Patents

固态图像拾取设备 Download PDF

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Publication number
CN102971851B
CN102971851B CN201180033415.3A CN201180033415A CN102971851B CN 102971851 B CN102971851 B CN 102971851B CN 201180033415 A CN201180033415 A CN 201180033415A CN 102971851 B CN102971851 B CN 102971851B
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substrate
bonding part
conducting material
film
electric conducting
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CN102971851A (zh
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下津佐峰生
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Canon Inc
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Canon Inc
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    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
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    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
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    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
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    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
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    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
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    • H10F39/10—Integrated devices
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    • H10F39/80—Constructional details of image sensors
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    • H10W80/327—Bonding techniques, e.g. hybrid bonding characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers
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    • H10W90/791—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads
    • H10W90/792—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads between multiple chips

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN201180033415.3A 2010-07-09 2011-07-04 固态图像拾取设备 Active CN102971851B (zh)

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Application Number Priority Date Filing Date Title
CN201610164142.0A CN105720067B9 (zh) 2010-07-09 2011-07-04 固态图像拾取设备

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010156926A JP5451547B2 (ja) 2010-07-09 2010-07-09 固体撮像装置
JP2010-156926 2010-07-09
PCT/JP2011/003796 WO2012004965A1 (en) 2010-07-09 2011-07-04 Solid-state image pickup device

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CN102971851B true CN102971851B (zh) 2016-04-06

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EP (3) EP3706172B1 (cg-RX-API-DMAC7.html)
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CN (2) CN102971851B (cg-RX-API-DMAC7.html)
RU (1) RU2521224C1 (cg-RX-API-DMAC7.html)
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