CN102959746B - 光电子半导体构件 - Google Patents

光电子半导体构件 Download PDF

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Publication number
CN102959746B
CN102959746B CN201180031298.7A CN201180031298A CN102959746B CN 102959746 B CN102959746 B CN 102959746B CN 201180031298 A CN201180031298 A CN 201180031298A CN 102959746 B CN102959746 B CN 102959746B
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upside
opto
semiconductor chip
castable
carrier
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CN102959746A (zh
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约翰·拉姆琴
大卫·拉奇
汉斯-克里斯托弗·加尔迈尔
斯特凡·格勒奇
西蒙·耶雷比奇
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Abstract

在光电子半导体构件（1）的至少一个实施形式中，所述光电子半导体构件包括载体（2）以及至少一个光电子半导体芯片（3），所述半导体芯片施加在载体上侧（20）上。此外，半导体构件（1）包括至少一个接合线（4），经由所述接合线来电接触半导体芯片（3），以及包括至少一个覆盖体部（5），所述覆盖体部施加在辐射主侧（30）上，并且超出接合线（4）。至少一个反射的浇注块（6）在横向方向上包围半导体芯片（3），并且至少伸展到半导体芯片（3）的辐射主侧（30）。接合线（4）由反射的浇注块（6）或由反射的浇注块（6）连同覆盖体部（5）一起完全遮盖。

Description

光电子半导体构件
技术领域
本发明提出一种光电子半导体构件。
背景技术
在参考文献US 2006/0138621A1中提出一种光电子部件和一种基于该光电子部件的模块。
发明内容
待实现的目的在于，提出一种具有高的光耦合输出效率的光电子半导体构件。
根据光电子半导体构件的至少一个实施形式，所述光电子半导体构件包括具有载体上侧的载体。载体例如为电路板或印刷的电路板，缩写为PCB。在其上例如施加有电的带状导线的载体基本材料例如能够是如氧化铝或氮化铝的陶瓷。同样地，载体能够基于金属或能够是金属芯印刷电路板。此外，载体能够构成为所谓的方形扁平无引脚封装，缩写为QFN。
根据光电子半导体构件的至少一个实施形式，所述光电子半导体构件包括一个或多个光电子半导体芯片，所述光电子半导体芯片施加在载体上侧上。半导体芯片具有背离载体上侧的辐射主侧。例如为可见的光的在半导体芯片中产生的电磁辐射，能够基本或完全经由辐射主侧离开。
半导体芯片尤其是基于III-V族半导体材料的半导体芯片。例如，半导体芯片基于如AlnIn1-nGamN的氮化物化合物半导体材料，或基于如AlnIn1-nGamP的磷化物化合物半导体材料，其中相应地0≤n≤1、0≤m≤1并且n+m≤1。在此，所述材料能够具有一种或多种掺杂材料以及附加的组分。然而为了简单性，只对晶格的主要的组分进行说明，即Al、Ga、In、N或P，即使所述组分能够部分地由少量其他材料代替并且/或者补充也如此。优选地，光电子半导体芯片设计为，用于在半导体构件工作时产生例如在蓝色的、绿色的、黄色的和/或红色的光谱范围内的可见辐射。在至少一个有源区中产生辐射，所述有源区包含至少一个量子阱结构和/或至少一个pn结。
根据光电子半导体构件的至少一个实施形式，半导体芯片经由至少一个接合线，优选经由正好一个接合线来电接触。接合线在辐射主侧上与半导体芯片连接。特别地，接合线将在载体上侧的带状导线与在半导体芯片的辐射主侧上的电流扩散结构连接。半导体芯片的电接触部优选位于半导体芯片的彼此相对置的主侧上。
根据半导体构件的至少一个实施形式，所述半导体构件具有至少一个覆盖体部，所述覆盖体部施加在半导体芯片的辐射主侧上。覆盖体部能够限制在辐射主侧上，或者也能够在横向方向上，即在平行于辐射主侧的方向上超出半导体芯片。此外，覆盖体部在远离载体上侧并且垂直于辐射主侧的方向上超出接合线。换言之，在垂直于辐射主侧的平面上的投影中，接合线能够完全地位于载体上侧和覆盖体部的背离载体上侧的体部上侧之间。
根据光电子半导体构件的至少一个实施形式，所述光电子半导体构件具有至少一个反射的浇注块。浇注块在横向方向上局部地或完全地包围半导体芯片。从载体上侧看，浇注块例如在最高15μm或最高5μm公差的情况下至少伸展到辐射主侧。优选地，反射的浇注块在横向方向上至少局部地与半导体芯片非间接地、直接地接触。
根据光电子半导体构件的至少一个实施形式，接合线完全由反射的浇注块遮盖，或替选地，完全由反射的浇注块连同覆盖体部一起遮盖。换言之，接合线在远离载体上侧的方向上，不从反射的浇注块中或不从反射的浇注块连同覆盖体部中伸出。接合线尤其不在任何部位上暴露。也就是说，在垂直于载体上侧并远离载体上侧的方向上，在接合线的每个分段上跟随有反射的浇注块的材料和/或覆盖体部的材料。
在光电子半导体构件的至少一个实施形式中，所述光电子半导体构件包括具有载体上侧的载体以及至少一个光电子半导体芯片，所述光电子半导体芯片施加在载体上侧上并且所述光电子半导体芯片具有背离载体上侧的辐射主侧。此外，半导体构件包括至少一个接合线以及至少一个覆盖体部，其中经由所述接合线来电接触半导体芯片，其中所述覆盖体部施加在辐射主侧上并且在远离载体上侧并垂直于辐射主侧的方向上超出接合线。至少一个反射的浇注块在横向方向上包围半导体芯片，并且从载体上侧起看，至少伸展到半导体芯片的辐射主侧。在此，接合线完全由反射的浇注块遮盖，或完全由反射的浇注块连同覆盖体部一起遮盖。
由于这种反射的浇注块，尤其仅能够在半导体芯片的辐射主侧上实现辐射发射。此外，能够在接合线上减少或避免阴影效果或不希望的反射，使得能够提高来自半导体构件的辐射耦合输出效率。
根据光电子半导体构件的至少一个实施形式，接合线完全地嵌入反射的浇注块中。特别地，反射的浇注块形状接合地包围接合线并且与接合线直接接触。因此，接合线例如由反射的浇注块直接地包封。完全地嵌入能够意味着，接合线仅仅首先与反射的浇注块接触，并且/或者其次，与电的连接区域接触，接合线与所述电的连接区域导电地连接并且接合线接合到所述电的连接区域上，并且/或者第三，与电的连接机构接触，借助于所述连接机构将接合线固定在连接区域上。
根据光电子半导体构件的至少一个实施形式，从载体上侧看，反射的浇注块伸展到覆盖体部的背离载体上侧的体部上侧。特别地，反射的浇注块在远离载体上侧的方向上在覆盖体部的横向边界面处与体部上侧齐平或在制造公差的范围内齐平。例如，制造公差最高为10μm。
根据光电子半导体构件的至少一个实施形式，覆盖体部的体部上侧设有抗粘层。抗粘层对于反射的浇注块的材料而言构造为是不润湿的。抗粘层由例如聚卤烯烃、尤其由如聚四氟乙烯的含氟的化合物制成，或具有例如聚卤烯烃、尤其具有如聚四氟乙烯的含氟的化合物。优选地，对于直接在半导体芯片中产生的辐射和/或对于在覆盖体部中经由波长转换而产生的辐射而言抗粘层是透明的。
根据光电子半导体构件的至少一个实施形式，反射的浇注体的背离载体上侧的浇注物上侧与覆盖体部的体部上侧齐平和/或平行地延伸。在垂直于体部上侧的方向上，关于齐平度和/或平行性的公差例如为最高30μm或最高10μm。在制造公差的范围内，浇注物上侧能够平行于载体上侧延伸。
根据光电子半导体构件的至少一个实施形式，在俯视图中，载体上侧完全由反射的浇注块连同覆盖体部一起遮盖。换言之，在垂直于并且远离载体上侧的方向上，载体上侧的每个分段跟随有浇注块的材料或/和覆盖体部的材料。尤其地，载体上侧的每个分段跟随有浇注块的材料或者覆盖体部的材料。
根据光电子半导体构件的至少一个实施形式，半导体芯片的辐射主侧具有电连接区域。电连接区域能够为所谓的接合焊盘。特别地，在连接区域中，将接合线与半导体芯片电地并且机械地连接。优选地，在辐射主侧上的半导体芯片刚好具有一个电连接区域。从连接区域出发，能够存在用于在辐射主侧上进行电流分布的结构，例如窄的、金属的接片。
根据光电子半导体构件的至少一个实施形式，在辐射主侧上的电连接区域不具有覆盖体部。换言之，连接区域在远离载体上侧的方向上未跟随有覆盖体部的材料。连接区域优选也不接触覆盖体部。
根据光电子半导体构件的至少一个实施形式，在辐射主侧上的电连接区域完全地或局部地由反射的浇注块覆盖。因此，在垂直于并且远离辐射主侧的方向上，连接区域的每个分段跟随有反射的浇注块的材料。
根据光电子半导体构件的至少一个实施形式，接合线在辐射主侧上的电的连接区域中在最高20°或最高10°的公差的情况下平行于辐射主侧和/或平行于载体上侧和/或平行于覆盖体部的体部上侧延伸。尤其优选地，接合线在围绕电的连接区域的附近区域中也平行于辐射主侧延伸。例如，附近区域具有相当于在辐射主侧上的电连接区域的平均直径最小两倍的或最小五倍的直径。
根据光电子半导体构件的至少一个实施形式，覆盖体部形成为小板，并且优选限界于辐射主侧。换言之，覆盖体部的横向的伸展尺寸超过其高度。将覆盖体部限界于辐射主侧表示，覆盖体部例如在最高50μm或最高15μm的公差的情况下在横向方向上没有超出辐射主侧。成形为小板还能够表示，覆盖体部的两个主侧在制造公差的范围内彼此平行地定向。
根据光电子半导体构件的至少一个实施形式，覆盖体部具有50μm和250μm之间的厚度，尤其为50μm和120μm之间的厚度，其中包括边界值。
根据光电子半导体构件的至少一个实施形式，反射的浇注块具有清晰可见的、透明的基体材料，其中反射的颗粒嵌入到基体材料中。例如，颗粒是漫反射的并且是白色的。尤其优选地，在室温的情况下，基体材料具有最高肖氏A50的硬度或最高肖氏A40的硬度。换言之，基体材料比较软。
根据光电子半导体构件的至少一个实施形式，颗粒包括颗粒材料或由颗粒材料制成，所述颗粒材料是金属氧化物。所述金属氧化物例如为二氧化钛。
根据光电子半导体构件的至少一个实施形式，反射的颗粒相对于整个反射的浇注块的重量比在10%和40%之间，尤其在20%和30%之间，其中包括边界值。
对于可见的辐射的、例如对于450nm和700nm之间的（包括边界值）波长范围内的辐射，反射的浇注块的反射系数为至少85%或者优选至少90%或至少93%。
根据光电子半导体构件的至少一个实施形式，在浇注块的俯视图中并且尤其在围绕半导体芯片的区域中看，浇注块呈白色。换言之，颗粒的浓度例如调整为，使得对于观察者而言浇注块引起白色的色觉。
根据光电子半导体构件的至少一个实施形式，在横向方向上看，反射的浇注块在四周完全地包围半导体芯片，并且构造为与半导体芯片的横向的边界面是形状接合的。此外优选地，反射的浇注块同样在横向方向上形状接合地并且在四周完全包围接合线和/或覆盖体部。
根据光电子半导体构件的至少一个实施形式，所述光电子半导体构件具有带有腔室的壳体，其中半导体芯片、覆盖体部、接合线以及反射的浇注块分别处于腔室中，并且其中半导体芯片施加在载体上侧上。在此优选地，反射的浇注块沿着横向方向，从半导体芯片伸展到腔室的横向的边界面，使得腔室的横向边界面和半导体芯片之间没有出现气隙或填充有其他材料的缝隙。
根据光电子半导体构件的至少一个实施形式，反射的浇注块设计为，将腔室的横向的边界面润湿。换言之，在横向的边界面上能够构造有凹形的弯月面，并且在制造半导体构件时，反射的浇注块能够沿着腔室的横向的边界面在远离载体上侧的方向上蠕变。
根据光电子半导体构件的至少一个实施形式，浇注块非直接地在腔室的横向的边界面处的厚度与其直接在半导体芯片处的厚度相比大至少50μm和/或最高400μm。换言之，反射的浇注块也能够构成抛物线状的反射器，其中浇注块的厚度在最高30μm公差的情况下，在远离半导体芯片的方向上持续增大。这并不排除，在所述公差内，例如在覆盖体部的横向的边界面上同样能够构成浇注块的相对小的弯月面。
附图说明
接下来，参考根据实施例的附图详细阐明在此描述的光电子半导体构件。在此，相同的附图标记在各个附图中表示相同的元件。然而，在此未示出按照的相互关系，相反，为了更好地理解，可以夸大地示出各个元件。
附图示出：
图1至7示出在此描述的光电子半导体构件的实施例的示意图。
具体实施方式
在图1中以示意剖面图示出光电子半导体构件1的实施例。光电子半导体芯片3施加在载体2的平面的载体上侧20上。半导体芯片3具有背离载体2的辐射主侧30。具有背离半导体芯片3的、平坦的体部上侧50的覆盖体部5被施加在辐射主侧30上。覆盖体部5成形为小板，并且具有例如大约100μm的厚度A。半导体芯片的厚度C例如处于30μm和250μm之间，尤其为大约120μm，其中包括边界值。在辐射主侧30的边角中的存在电的连接区域7a的部分区域没有被覆盖体部5覆盖。
经由接合线4进行半导体芯片3的电接触，所述接合线从在载体上侧20上的电连接区域7b伸展至在辐射主侧30上的连接区域7a。在围绕连接区域7a的区域中，接合线4例如在最高20°公差的情况下，近似平行于辐射主侧30地延伸。与图1中所示不同的是，尤其如果连接区域7a构造为底座式的，接合线4距载体上侧20的间距从连接区域7a起在朝向连接区域7b的方向上持续减小。
在横向方向上，反射的浇注块6形状接合地包围半导体芯片3、覆盖体部5以及接合线4。接合线4完全地嵌入反射的浇注块6中。例如在最高5%或最高10%公差的情况下，浇注块6的厚度T相当于覆盖体部5以及半导体芯片3的厚度A、C的总和。浇注块6的背离载体2的浇注物上侧60在制造公差的范围内平行于载体上侧20以及平行于体部上侧50地定向，并且在制造公差的范围内与体部上侧50齐平。浇注块6例如为透明的硅树脂或透明的硅树脂-环氧化物-杂化材料，嵌入尤其由二氧化钛制成的反射的颗粒嵌入到所述材料中。在辐射主侧30上的连接区域7a被浇注块6完全覆盖。
在覆盖体部5的横向的边界面处，在浇注块6的背离载体2的浇注物上侧60上能够构造有凹形的弯月面。优选地，覆盖体部5的体部上侧50设有抗粘层8，所述抗粘层防止将体部上侧50用浇注块6的材料润湿。抗粘层8的厚度例如处于10nm和1μm之间、尤其处于25nm和200nm之间，其中包括边界值。抗粘层优选具有氟化材料，例如具有特氟龙类材料。
覆盖体部5例如粘贴到辐射主侧30上，或直接地按压到辐射主侧30上。与所示不同的是，在远离载体上侧20的方向上，多个覆盖体部能够相互跟随，所述覆盖体部执行不同的功能并且例如是透明的、漫射的或具有转换机构。同样可行的是，覆盖体部5在体部上侧50上分别具有用于改进光耦合输出的粗化的结构，或者附加于或替选于抗粘层8而设有抗反射层，或设有特别硬的、能够抗机械负荷的层。
与在图1中所示不同的是，例如还在全部其他的实施例中，光电子半导体芯片3可以经由两个接合线4在辐射主侧30上电接触，并且然后，半导体芯片3可以构造为所谓的倒装芯片（Flip-Clip）。
在图2A至2E中，以立体图示意地示出用于制造光电子半导体构件1的实施例的方法。
根据图2A，提供载体2。载体2在载体上侧20上具有电连接区域7b、7c、7d。连接区域7b、7d优选与在载体2的下侧上的未示出的电的带状导线通过通孔敷镀连接。
根据图2B，例如通过焊接或导电胶将多个半导体芯片3施加在连接区域7c上。在连接区域7d上施加有防静电放电的保护二极管11。半导体芯片3能够为结构相同的半导体芯片，或也能够为不同的、例如在不同的光谱范围内发射的半导体芯片。
在图2C中，将接合线4a、4b从在载体上侧20上的连接区域7b出发与半导体芯片3的连接区域7a、7e以及与保护二极管11连接。接合线4a、4b优选首先与载体上侧20连接并且接下来与半导体芯片3以及与保护二极管11连接。
根据图2D，将覆盖体部5a、5b施加到半导体芯片3上。覆盖体部5a例如为清晰可见的、透明的小板，所述小板优选具有使得在远离载体2的方向上与覆盖体部5b齐平的厚度。覆盖体部5b包括转换机构，所述转换机构设计为，将由半导体芯片3发射的辐射的至少一个部分转换成其他波长的辐射。例如，与覆盖体部5b关联的半导体芯片3发射蓝色的光，并且与覆盖体部5a关联的半导体芯片3发射蓝色的光或红色的光。替选于此，半导体芯片3相应地能够为结构相同的半导体芯片。同样地，能够使用结构相同的覆盖体部5a、5b。
接合线4a、4b的详细示图能够从图3中得出。在远离载体上侧20的方向上，覆盖体部5a、5b超出接合线4a、4b。所述接合线沿着接合线4a、4b的延伸而具有不同的曲率半径。接合线4a、4b的曲率半径在载体上侧20的电连接区域7b上尤其小于邻近于在半导体芯片3的背离载体2的一侧上的连接区域7a、7e以及邻近于保护二极管11的区域中。
根据图2E，半导体芯片3以及覆盖体部5a、5b和接合线4a、4b由反射的浇注块6包封并且在横向方向上包围。覆盖体部5a、5b以及浇注块6在远离载体上侧20的方向上完全地覆盖载体2。接合线4a、4b完全地嵌入浇注块6中。浇注物上侧60近似平行于载体上侧20地延伸，并且除了在覆盖体部5a、5b的横向的边界面处构成的凹形的弯月面之外，形成为平坦的并且与覆盖体部上侧50齐平。
通过浇注块6能够防止辐射从与具有转换机构的覆盖体部5b关联的半导体芯片3射出，所述辐射不穿过覆盖体部5b。由此，能够实现特别均匀的光谱辐射和高的转换效率。
可选地，能够将根据图2E的半导体构件1分割成分别具有多个或刚好一个半导体芯片3的半导体构件。
在图4中示出半导体构件1的另一实施例的剖面图。与根据图1的实施例不同的是，接合线4嵌入到浇注块6连同覆盖体部5中。从载体上侧20看，反射的浇注块6仅伸展到辐射主侧30上。覆盖体部5完全地或基本上完全地在整个载体上侧20上延伸。体部上侧50优选形成为平坦的。覆盖体部5的厚度A优选处于50μm和150μm之间，其中包括边界值。覆盖体部5优选是清晰可见的和透明的。同样地，覆盖体部5可以包括过滤机构和/或转换机构，在所有其他实施例中也如此。
在根据示出半导体构件1的另一实施例的制造方法的图5A至5E的实施例中，与图2A至2E类似地，载体2具有带有腔室90的壳体9。腔室90的横向的边界面95近似垂直于施加有电连接区域7b、7c、7d的载体上侧20地定向。横向的边界面95构造为对于反射的浇注块6是润湿的，使得在用反射的浇注块6填充腔室60的情况下，通过浇注物上侧60构成反射器碗部。浇注物上侧60优选成形为是抛物线状的。
载体2的横向尺寸例如在1mm×2mm和4mm×8mm之间变动，其中包括边界值,在所有其他实施例中也如此。因此，半导体构件1构造成相对紧凑的。可选地，在壳体9以及载体2的边角处能够形成圆柱形的凹部，所述凹部例如为校准辅助器或装配辅助器。
根据图6A至6C，以示意的剖面图示出具有壳体9的半导体构件1的又一实施例。同样在全部其他实施例中，优选在浇注物上侧60的下游不设置其他的浇注物。特别地，浇注物上侧60与空气邻接。替选于此可行的是，在浇注物上侧60上和/或在壳体9上能够将附图中未示出的光学装置例如透镜设置在下游。
在图7中，以剖面图示出半导体构件1的又一实施例。为了简化地描述，在图7中未示出覆盖体部以及接合线。通过浇注物上侧60构成抛物线状的反射器。在制造期间，浇注块6在横向的边界面95处向上蠕变。浇注块6在半导体芯片3上具有厚度T1并且在横向的边界面95上具有厚度T2。厚度T1、T2之间的差例如在50μm和400μm之间或在75μm和300μm之间，其中包括边界值。浇注块6的在壳体9的横向的边界面95和半导体芯片3之间的横向的伸展尺寸例如在100μm和1mm之间，尤其在150μm和500μm之间，其中包括边界值，例如为大约350μm。浇注块6与半导体芯片3和横向的边界面95直接接触。在半导体芯片3的横向的边界面上能够存在连接机构的凹槽形部分，借助于所述凹槽形部分将半导体芯片3施加在载体2上。
在图7中能够看出，浇注块6的厚度T在远离半导体芯片3的方向上，能够首先稍微下降，然后在朝向横向的边界面95的方向上再持续上升。在远离半导体芯片3的方向上，厚度T的下降优选为最高30μm或最高20μm并且能够归因于在半导体芯片3上或在覆盖体部上构成小的凹形的弯月面。通过浇注物上侧60进行的射束成形由于浇注物体部6的厚度T的该局部最小值而不受影响或几乎不受影响。
本发明现不限制于根据实施例进行的描述。相反，本发明包括任意新的特征以及特征的任意组合，这尤其是包括在权利要求中的特征的任意组合，即使该特征或者该组合本身并未在权利要求或者实施例中明确说明时也如此。
本申请要求德国专利申请102010024864.9的优先权，其公开内容通过引用并入本文。

Claims (12)

1.光电子半导体构件(1)，具有
-载体(2)，所述载体具有载体上侧(20)，
-至少一个光电子半导体芯片(3)，所述光电子半导体芯片施加在所述载体上侧(20)上，并且所述光电子半导体芯片具有背离所述载体上侧(20)的辐射主侧(30)，
-至少一个接合线(4)，经由所述接合线来电接触所述半导体芯片(3)，
-在所述辐射主侧(30)上的至少一个覆盖体部(5)，所述覆盖体部在远离所述载体上侧(20)并且垂直于所述辐射主侧(30)的方向上超出所述接合线(4)，和
-至少一个反射的浇注块(6)，所述浇注块在横向方向上包围所述半导体芯片(3)，并且从所述载体上侧(20)起至少伸展到所述辐射主侧(30)，和
-具有腔室(90)的壳体(9)，
其中
-所述反射的浇注块(6)，从所述载体上侧(20)起伸展至所述覆盖体部(5)的背离所述载体上侧(20)的体部上侧(50)上，
-所述接合线(4)完全嵌入所述反射的浇注块(6)中，
-所述接合线(4)在所述半导体芯片(2)上的所述辐射主侧(30)上布置施加在电的连接区域(7)中，
-所述电连接区域(7)没有所述覆盖体部(5)，并且完全地由所述反射的浇注块(6)覆盖，
-所述半导体芯片(3)、所述覆盖体部(5)以及所述反射的浇注块(6)在所述载体上侧(20)上设置在所述腔室(90)中，
-所述反射的浇注块(6)从所述半导体芯片(3)伸展到所述腔室(90)的横向的边界面(95)，
-所述反射的浇注块(6)形状接合地并且在横向方向上在四周完全地包围所述半导体芯片(3)、所述接合线(4)以及所述覆盖体部(5)，
-背离所述载体上侧(20)的浇注物上侧(60)与所述覆盖体部(5)的所述体部上侧(50)齐平地延伸，并且
-所述反射的浇注块(6)的所述浇注物上侧(60)成形为是抛物线状的。
2.根据权利要求1所述的光电子半导体构件(1)，
其中所述覆盖体部(5)在横向方向上、即在平行于所述辐射主侧(30)的方向上超出所述半导体芯片(2)。
3.根据权利要求1或2所述的光电子半导体构件(1)，
其中所述覆盖体部(5)的所述体部上侧(50)设有抗粘层(8)，并且所述抗粘层(8)对于所述反射的浇注块(6)的材料不是润湿的。
4.根据权利要求1或2所述的光电子半导体构件(1)，
其中在俯视图中观察，所述载体上侧(20)由所述反射的浇注块(6)连同所述覆盖体部(5)一起完全遮盖。
5.根据权利要求1或2所述的光电子半导体构件(1)，
其中所述覆盖体部(5)在远离所述载体上侧(20)和垂直于所述辐射主侧(30)的方向上超出所述接合线(4)。
6.根据权利要求3所述的光电子半导体构件(1)，
其中所述抗粘层(8)由聚卤烯烃制成，其中所述抗粘层(8)的厚度例如位于25nm和200nm之间，其中包括边界值。
7.根据权利要求1或2所述的光电子半导体构件(1)，
其中所述覆盖体部(5)粘贴到所述辐射主侧(30)上，其中覆盖体部(5)在背离所述半导体芯片(3)的体部上侧(50)上具有用于改进光耦合输出的粗化的结构或者设有抗反射层。
8.根据权利要求1或2所述的光电子半导体构件(1)，
其中所述反射的浇注块(6)包括透明的基体材料和嵌入其中的反射的颗粒，
其中所述基体材料在室温下具有最高肖氏A 50的硬度。
9.根据权利要求8所述的光电子半导体构件(1)，
其中形成所述反射的颗粒的颗粒材料是金属氧化物，
其中所述颗粒对于所述反射的浇注块(6)的重量比在10％和40％之间，其中包括边界值。
10.根据权利要求1或2所述的光电子半导体构件(1)，
其中所述接合线(4)在所述连接区域(7)中在最高10°公差的情况下平行于所述辐射主侧(30)延伸，并且所述覆盖体部(5)成形为小板，并且所述覆盖体部(5)的厚度(A)为50μm和250μm之间，其中包括边界值。
11.根据权利要求1所述的光电子半导体构件(1)，
其中所述反射的浇注块(6)设计用于，将所述腔室(90)的所述横向的边界面(95)润湿，
其中所述浇注块(6)的在所述横向的边界面(95)处的厚度(T)与在所述半导体芯片(3)处的厚度相比至少大50μm并且至多大400μm。
12.根据权利要求1或2所述的光电子半导体构件(1)，
所述光电子半导体构件包括多个所述光电子半导体芯片(3)，
其中第一覆盖体部(5a)是清晰可见的、透明的小板，所述小板具有使得在远离所述载体(2)的方向上与第二覆盖体部(5b)齐平的厚度，
其中所述第二覆盖体部(5b)包括转换机构，所述转换机构设计为，将由所述半导体芯片(3)发射的辐射的至少一部分转换为其他波长的辐射，
其中与所述第二覆盖体部(5b)关联的半导体芯片(3)发射蓝色的光，并且与所述第一覆盖体部(5a)关联的所述半导体芯片(3)发射红色的光。
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