CN102956533B - 静电卡盘以及半导体装置或液晶显示装置的制造装置 - Google Patents

静电卡盘以及半导体装置或液晶显示装置的制造装置 Download PDF

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Publication number
CN102956533B
CN102956533B CN201210273478.2A CN201210273478A CN102956533B CN 102956533 B CN102956533 B CN 102956533B CN 201210273478 A CN201210273478 A CN 201210273478A CN 102956533 B CN102956533 B CN 102956533B
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CN
China
Prior art keywords
chuck
electrostatic chuck
concave part
region
pallet
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Active
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CN201210273478.2A
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English (en)
Chinese (zh)
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CN102956533A (zh
Inventor
白岩则雄
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Shinko Electric Co Ltd
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Shinko Electric Co Ltd
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Publication of CN102956533A publication Critical patent/CN102956533A/zh
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23QDETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15Devices for holding work using magnetic or electric force acting directly on the work
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • H01J37/32724Temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32733Means for moving the material to be treated
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32733Means for moving the material to be treated
    • H01J37/32752Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761Continuous moving
    • H01J37/32779Continuous moving of batches of workpieces
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32733Means for moving the material to be treated
    • H01J37/32788Means for moving the material to be treated for extracting the material from the process chamber
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02NELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0434Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7621Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting two or more semiconductor substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
CN201210273478.2A 2011-08-26 2012-08-02 静电卡盘以及半导体装置或液晶显示装置的制造装置 Active CN102956533B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-184285 2011-08-26
JP2011184285A JP6285620B2 (ja) 2011-08-26 2011-08-26 静電チャック及び半導体・液晶製造装置

Publications (2)

Publication Number Publication Date
CN102956533A CN102956533A (zh) 2013-03-06
CN102956533B true CN102956533B (zh) 2018-04-06

Family

ID=47741925

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CN201210273478.2A Active CN102956533B (zh) 2011-08-26 2012-08-02 静电卡盘以及半导体装置或液晶显示装置的制造装置

Country Status (5)

Country Link
US (1) US11037811B2 (enExample)
JP (1) JP6285620B2 (enExample)
KR (1) KR102056723B1 (enExample)
CN (1) CN102956533B (enExample)
TW (1) TWI563583B (enExample)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9668373B2 (en) * 2013-03-15 2017-05-30 Applied Materials, Inc. Substrate support chuck cooling for deposition chamber
CN104134624B (zh) * 2013-05-02 2017-03-29 北京北方微电子基地设备工艺研究中心有限责任公司 托盘及等离子体加工设备
JP6348321B2 (ja) * 2013-05-17 2018-06-27 キヤノンアネルバ株式会社 エッチング装置
CN104465453B (zh) * 2013-09-20 2018-10-30 住友电气工业株式会社 等离子体cvd装置用的晶片加热器
JP5938716B2 (ja) * 2013-11-01 2016-06-22 パナソニックIpマネジメント株式会社 プラズマ処理装置及びプラズマ処理方法
CN104752301B (zh) * 2013-12-31 2018-05-25 北京北方华创微电子装备有限公司 一种静电卡盘以及腔室
CN105280518B (zh) * 2014-05-30 2020-09-08 盛美半导体设备(上海)股份有限公司 半导体基板的热处理装置
CN105448631B (zh) * 2014-06-12 2017-07-25 中微半导体设备(上海)有限公司 一种基片安装平台和一种等离子处理装置及其运行方法
JP6377975B2 (ja) * 2014-06-23 2018-08-22 新光電気工業株式会社 基板固定装置
US10030303B2 (en) * 2014-12-19 2018-07-24 Sunpower Corporation Sputter tool
US9633886B2 (en) * 2015-04-16 2017-04-25 Varian Semiconductor Equipment Associates, Inc. Hybrid thermal electrostatic clamp
JP6129451B1 (ja) * 2015-08-20 2017-05-17 日本碍子株式会社 静電チャックヒータ
CN105551926B (zh) * 2015-12-11 2017-10-03 中国电子科技集团公司第四十八研究所 一种采用基座冷却旋转工件的旋转工件台
JP6572800B2 (ja) * 2016-02-26 2019-09-11 株式会社村田製作所 真空装置
WO2017195672A1 (ja) * 2016-05-09 2017-11-16 株式会社 アルバック 静電チャック、および、プラズマ処理装置
JP6858035B2 (ja) 2017-02-27 2021-04-14 新光電気工業株式会社 基板固定具及び基板固定装置
JP7208168B2 (ja) * 2017-06-16 2023-01-18 チュソン エンジニアリング カンパニー,リミテッド 基板処理装置及び真空回転電気コネクタ
JP6518024B1 (ja) * 2017-10-30 2019-05-22 日本碍子株式会社 静電チャック及びその製法
WO2019088204A1 (ja) 2017-11-06 2019-05-09 日本碍子株式会社 静電チャックアセンブリ、静電チャック及びフォーカスリング
JP6965776B2 (ja) * 2018-02-08 2021-11-10 トヨタ自動車株式会社 静電吸着搬送装置およびその方法
US11848177B2 (en) 2018-02-23 2023-12-19 Lam Research Corporation Multi-plate electrostatic chucks with ceramic baseplates
KR102411272B1 (ko) * 2018-03-26 2022-06-22 엔지케이 인슐레이터 엘티디 정전척 히터
JP7259060B2 (ja) * 2019-02-05 2023-04-17 アプライド マテリアルズ インコーポレイテッド 堆積プロセスのためのマスクのチャッキングのための基板支持体
US12300473B2 (en) * 2019-03-08 2025-05-13 Applied Materials, Inc. Electrostatic chuck for high bias radio frequency (RF) power application in a plasma processing chamber
JP6918042B2 (ja) * 2019-03-26 2021-08-11 日本碍子株式会社 ウエハ載置装置
JP7349845B2 (ja) * 2019-08-13 2023-09-25 東京エレクトロン株式会社 基板処理システムにおける搬送方法
TW202531381A (zh) * 2020-03-03 2025-08-01 日商東京威力科創股份有限公司 基板支持台、電漿處理系統及環狀構件之安裝方法
TW202516684A (zh) 2020-03-03 2025-04-16 日商東京威力科創股份有限公司 電漿處理系統及基板支持台
CN111900118B (zh) * 2020-06-19 2023-04-07 中国科学院微电子研究所 晶圆转移机构、半导体制造设备以及晶圆转移方法
CN112768402A (zh) * 2020-12-31 2021-05-07 深圳市金旺鑫五金有限公司 一种pss刻蚀载体托盘
JP7492928B2 (ja) * 2021-02-10 2024-05-30 東京エレクトロン株式会社 基板支持器、プラズマ処理システム及びプラズマエッチング方法
CN114141683A (zh) * 2021-11-26 2022-03-04 北京北方华创微电子装备有限公司 静电托盘及基座
JP2024071016A (ja) * 2022-11-14 2024-05-24 新光電気工業株式会社 トレイ及び基板固定装置
US20240266200A1 (en) * 2023-02-08 2024-08-08 Applied Materials, Inc. Electrostatic Chuck
TW202537006A (zh) * 2024-02-02 2025-09-16 日商東京威力科創股份有限公司 基板處理裝置及托盤
CN119419143B (zh) * 2025-01-03 2025-04-11 浙江晟霖益嘉科技有限公司 一种晶圆静电吸附加热装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3090339B2 (ja) * 1990-03-19 2000-09-18 株式会社東芝 気相成長装置および方法
JP3297288B2 (ja) * 1996-02-13 2002-07-02 株式会社東芝 半導体装置の製造装置および製造方法
US6344105B1 (en) * 1999-06-30 2002-02-05 Lam Research Corporation Techniques for improving etch rate uniformity
US6646233B2 (en) * 2002-03-05 2003-11-11 Hitachi High-Technologies Corporation Wafer stage for wafer processing apparatus and wafer processing method
JP4547182B2 (ja) * 2003-04-24 2010-09-22 東京エレクトロン株式会社 プラズマ処理装置
US20040261946A1 (en) * 2003-04-24 2004-12-30 Tokyo Electron Limited Plasma processing apparatus, focus ring, and susceptor
JP2006319043A (ja) 2005-05-11 2006-11-24 Hitachi High-Technologies Corp プラズマ処理装置
KR100964775B1 (ko) * 2005-10-12 2010-06-21 파나소닉 주식회사 플라즈마 처리장치 및 플라즈마 처리방법
US7651571B2 (en) * 2005-12-22 2010-01-26 Kyocera Corporation Susceptor
JP2010232250A (ja) * 2009-03-26 2010-10-14 Panasonic Corp プラズマ処理装置
KR20110137775A (ko) * 2009-03-26 2011-12-23 파나소닉 주식회사 플라즈마 처리 장치 및 플라즈마 처리 방법
JP2011114178A (ja) * 2009-11-27 2011-06-09 Samco Inc プラズマ処理装置及びプラズマ処理方法

Also Published As

Publication number Publication date
JP6285620B2 (ja) 2018-02-28
KR102056723B1 (ko) 2019-12-17
TW201310564A (zh) 2013-03-01
CN102956533A (zh) 2013-03-06
JP2013045989A (ja) 2013-03-04
US11037811B2 (en) 2021-06-15
TWI563583B (en) 2016-12-21
US20130048217A1 (en) 2013-02-28
KR20130023062A (ko) 2013-03-07

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