CN102956533B - 静电卡盘以及半导体装置或液晶显示装置的制造装置 - Google Patents
静电卡盘以及半导体装置或液晶显示装置的制造装置 Download PDFInfo
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- CN102956533B CN102956533B CN201210273478.2A CN201210273478A CN102956533B CN 102956533 B CN102956533 B CN 102956533B CN 201210273478 A CN201210273478 A CN 201210273478A CN 102956533 B CN102956533 B CN 102956533B
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- chuck
- pallet
- electrostatic chuck
- concave part
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 16
- 238000012546 transfer Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 17
- 238000001312 dry etching Methods 0.000 claims description 15
- 238000001816 cooling Methods 0.000 claims description 13
- 230000008859 change Effects 0.000 claims description 3
- 230000006641 stabilisation Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 28
- 238000005530 etching Methods 0.000 description 22
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- 238000012797 qualification Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000007767 bonding agent Substances 0.000 description 2
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- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
- H01J37/32761—Continuous moving
- H01J37/32779—Continuous moving of batches of workpieces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32788—Means for moving the material to be treated for extracting the material from the process chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011184285A JP6285620B2 (ja) | 2011-08-26 | 2011-08-26 | 静電チャック及び半導体・液晶製造装置 |
| JP2011-184285 | 2011-08-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102956533A CN102956533A (zh) | 2013-03-06 |
| CN102956533B true CN102956533B (zh) | 2018-04-06 |
Family
ID=47741925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210273478.2A Active CN102956533B (zh) | 2011-08-26 | 2012-08-02 | 静电卡盘以及半导体装置或液晶显示装置的制造装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US11037811B2 (enExample) |
| JP (1) | JP6285620B2 (enExample) |
| KR (1) | KR102056723B1 (enExample) |
| CN (1) | CN102956533B (enExample) |
| TW (1) | TWI563583B (enExample) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9668373B2 (en) * | 2013-03-15 | 2017-05-30 | Applied Materials, Inc. | Substrate support chuck cooling for deposition chamber |
| CN104134624B (zh) * | 2013-05-02 | 2017-03-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 托盘及等离子体加工设备 |
| JP6348321B2 (ja) * | 2013-05-17 | 2018-06-27 | キヤノンアネルバ株式会社 | エッチング装置 |
| CN104465453B (zh) * | 2013-09-20 | 2018-10-30 | 住友电气工业株式会社 | 等离子体cvd装置用的晶片加热器 |
| JP5938716B2 (ja) * | 2013-11-01 | 2016-06-22 | パナソニックＩｐマネジメント株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| CN104752301B (zh) * | 2013-12-31 | 2018-05-25 | 北京北方华创微电子装备有限公司 | 一种静电卡盘以及腔室 |
| CN105280518B (zh) * | 2014-05-30 | 2020-09-08 | 盛美半导体设备(上海)股份有限公司 | 半导体基板的热处理装置 |
| CN105448631B (zh) * | 2014-06-12 | 2017-07-25 | 中微半导体设备(上海)有限公司 | 一种基片安装平台和一种等离子处理装置及其运行方法 |
| JP6377975B2 (ja) * | 2014-06-23 | 2018-08-22 | 新光電気工業株式会社 | 基板固定装置 |
| US10030303B2 (en) * | 2014-12-19 | 2018-07-24 | Sunpower Corporation | Sputter tool |
| US9633886B2 (en) * | 2015-04-16 | 2017-04-25 | Varian Semiconductor Equipment Associates, Inc. | Hybrid thermal electrostatic clamp |
| KR101776562B1 (ko) * | 2015-08-20 | 2017-09-07 | 엔지케이 인슐레이터 엘티디 | 정전 척 히터 |
| CN105551926B (zh) * | 2015-12-11 | 2017-10-03 | 中国电子科技集团公司第四十八研究所 | 一种采用基座冷却旋转工件的旋转工件台 |
| JP6572800B2 (ja) * | 2016-02-26 | 2019-09-11 | 株式会社村田製作所 | 真空装置 |
| WO2017195672A1 (ja) * | 2016-05-09 | 2017-11-16 | 株式会社 アルバック | 静電チャック、および、プラズマ処理装置 |
| JP6858035B2 (ja) | 2017-02-27 | 2021-04-14 | 新光電気工業株式会社 | 基板固定具及び基板固定装置 |
| JP7208168B2 (ja) | 2017-06-16 | 2023-01-18 | チュソン エンジニアリング カンパニー，リミテッド | 基板処理装置及び真空回転電気コネクタ |
| JP6518024B1 (ja) * | 2017-10-30 | 2019-05-22 | 日本碍子株式会社 | 静電チャック及びその製法 |
| JP6894000B2 (ja) | 2017-11-06 | 2021-06-23 | 日本碍子株式会社 | 静電チャックアセンブリ及び静電チャック |
| JP6965776B2 (ja) * | 2018-02-08 | 2021-11-10 | トヨタ自動車株式会社 | 静電吸着搬送装置およびその方法 |
| US11848177B2 (en) | 2018-02-23 | 2023-12-19 | Lam Research Corporation | Multi-plate electrostatic chucks with ceramic baseplates |
| KR102411272B1 (ko) * | 2018-03-26 | 2022-06-22 | 엔지케이 인슐레이터 엘티디 | 정전척 히터 |
| JP7259060B2 (ja) * | 2019-02-05 | 2023-04-17 | アプライド マテリアルズ インコーポレイテッド | 堆積プロセスのためのマスクのチャッキングのための基板支持体 |
| US12300473B2 (en) * | 2019-03-08 | 2025-05-13 | Applied Materials, Inc. | Electrostatic chuck for high bias radio frequency (RF) power application in a plasma processing chamber |
| JP6918042B2 (ja) * | 2019-03-26 | 2021-08-11 | 日本碍子株式会社 | ウエハ載置装置 |
| JP7349845B2 (ja) * | 2019-08-13 | 2023-09-25 | 東京エレクトロン株式会社 | 基板処理システムにおける搬送方法 |
| TW202516684A (zh) | 2020-03-03 | 2025-04-16 | 日商東京威力科創股份有限公司 | 電漿處理系統及基板支持台 |
| TW202531381A (zh) * | 2020-03-03 | 2025-08-01 | 日商東京威力科創股份有限公司 | 基板支持台、電漿處理系統及環狀構件之安裝方法 |
| CN111900118B (zh) * | 2020-06-19 | 2023-04-07 | 中国科学院微电子研究所 | 晶圆转移机构、半导体制造设备以及晶圆转移方法 |
| CN112768402A (zh) * | 2020-12-31 | 2021-05-07 | 深圳市金旺鑫五金有限公司 | 一种pss刻蚀载体托盘 |
| JP7492928B2 (ja) * | 2021-02-10 | 2024-05-30 | 東京エレクトロン株式会社 | 基板支持器、プラズマ処理システム及びプラズマエッチング方法 |
| JP2023045060A (ja) * | 2021-09-21 | 2023-04-03 | 日本特殊陶業株式会社 | 基板保持部材 |
| CN114141683A (zh) * | 2021-11-26 | 2022-03-04 | 北京北方华创微电子装备有限公司 | 静电托盘及基座 |
| JP2024071016A (ja) * | 2022-11-14 | 2024-05-24 | 新光電気工業株式会社 | トレイ及び基板固定装置 |
| US20240266200A1 (en) * | 2023-02-08 | 2024-08-08 | Applied Materials, Inc. | Electrostatic Chuck |
| TW202537006A (zh) * | 2024-02-02 | 2025-09-16 | 日商東京威力科創股份有限公司 | 基板處理裝置及托盤 |
| CN119419143B (zh) * | 2025-01-03 | 2025-04-11 | 浙江晟霖益嘉科技有限公司 | 一种晶圆静电吸附加热装置 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP3090339B2 (ja) * | 1990-03-19 | 2000-09-18 | 株式会社東芝 | 気相成長装置および方法 |
| JP3297288B2 (ja) * | 1996-02-13 | 2002-07-02 | 株式会社東芝 | 半導体装置の製造装置および製造方法 |
| US6344105B1 (en) * | 1999-06-30 | 2002-02-05 | Lam Research Corporation | Techniques for improving etch rate uniformity |
| US6646233B2 (en) * | 2002-03-05 | 2003-11-11 | Hitachi High-Technologies Corporation | Wafer stage for wafer processing apparatus and wafer processing method |
| US20040261946A1 (en) * | 2003-04-24 | 2004-12-30 | Tokyo Electron Limited | Plasma processing apparatus, focus ring, and susceptor |
| JP4547182B2 (ja) * | 2003-04-24 | 2010-09-22 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP2006319043A (ja) * | 2005-05-11 | 2006-11-24 | Hitachi High-Technologies Corp | プラズマ処理装置 |
| KR100964775B1 (ko) * | 2005-10-12 | 2010-06-21 | 파나소닉 주식회사 | 플라즈마 처리장치 및 플라즈마 처리방법 |
| US7651571B2 (en) * | 2005-12-22 | 2010-01-26 | Kyocera Corporation | Susceptor |
| WO2010109848A1 (ja) * | 2009-03-26 | 2010-09-30 | パナソニック株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| JP2010232250A (ja) * | 2009-03-26 | 2010-10-14 | Panasonic Corp | プラズマ処理装置 |
| JP2011114178A (ja) * | 2009-11-27 | 2011-06-09 | Samco Inc | プラズマ処理装置及びプラズマ処理方法 |
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2011
- 2011-08-26 JP JP2011184285A patent/JP6285620B2/ja active Active
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2012
- 2012-07-10 TW TW101124751A patent/TWI563583B/zh active
- 2012-07-12 US US13/547,316 patent/US11037811B2/en active Active
- 2012-07-12 KR KR1020120075809A patent/KR102056723B1/ko active Active
- 2012-08-02 CN CN201210273478.2A patent/CN102956533B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP6285620B2 (ja) | 2018-02-28 |
| CN102956533A (zh) | 2013-03-06 |
| TW201310564A (zh) | 2013-03-01 |
| JP2013045989A (ja) | 2013-03-04 |
| US20130048217A1 (en) | 2013-02-28 |
| KR20130023062A (ko) | 2013-03-07 |
| TWI563583B (en) | 2016-12-21 |
| KR102056723B1 (ko) | 2019-12-17 |
| US11037811B2 (en) | 2021-06-15 |
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