CN102918936B - 电子器件安装装置及其方法 - Google Patents
电子器件安装装置及其方法 Download PDFInfo
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Abstract
电子器件安装装置包括:焊接工具(28),朝着与基板(42)接离方向被驱动,将电子器件(31)热压接到基板(42)上;直线尺(61),直线尺头(62),检测焊接工具(28)的与基板(42)接离方向的位置;以及控制部(50);控制部(50)一边加热电子器件(31),一边焊接工具(28)从基准位置只以所定距离靠近基板(42)场合,判断电子器件(31)的电极和基板(42)的电极之间的焊锡膜(44)热熔融,保持那时的焊接工具(28)的相对基板(42)的沿着接离方向的位置。由此,在通过热熔融的接合金属接合电子器件和基板的电子器件安装装置中,使得焊接质量提高。
Description
技术领域
本发明涉及将电子器件安装在基板等的电子器件安装装置的结构及其方法。
背景技术
大多使用通过热压接将在电极上形成焊锡凸块、带有焊锡凸块的电子器件安装在基板上的方法。该方法通过压接工具将电子器件推压在基板上,同时,加热电子器件使得焊锡熔融,锡焊接合在基板电极上。在该热压接工序中,若焊锡凸块熔融后还继续推压,则成为压塌熔融焊锡,因此,在焊锡凸块熔融前固定热压接工具的位置,防止压塌焊锡凸块。但是,即使在热压接工具固定状态下,在检测推压负荷的测力传感器残留因负荷引起的变形应变,当该残留应变释放时,热压接工具朝下方向移动,有时压塌熔融的焊锡凸块。
于是,提出以下方法:在焊锡凸块熔融前,降低热压接工具的推压负荷,用热压接工具将具有焊锡凸块的电子器件推压到基板,开始加热电子器件后,当推压负荷减少到所定值以下场合,判断为焊锡熔融,使得热压接工具上升(例如,参照专利文献1,2)。
又,提出了以下方法:因热压接工具开始电子器件温度上升后,将头工具的电子器件的推压负荷设为一定控制,检测由测力传感器测定的负荷减少,判断焊锡熔融,将头工具的负荷从一定控制负荷切换为将吸附喷嘴前端高度的位置设为一定的位置控制,即使焊锡熔融时也能确实进行电子器件的背面高度管理(例如,参照专利文献3)。
【专利文献】
【专利文献1】日本专利第3399323号公报
【专利文献2】日本专利第3399324号公报
【专利文献3】日本特开2003-31993号公报
另一方面,近年,大多在电子器件的电极上成形金凸块,在基板的铜电极表面设有薄焊锡膜,使用使得金凸块的金和焊锡热熔融接合的金焊锡熔融接合。这种场合,形成在基板电极表面的膜厚薄到10~30μm左右,因此,在专利文献1~3记载的以往技术中,刚减少负荷后的热压接工具的沉入量比焊锡膜厚大,当安装电子器件时,有时形成在电子器件电极的金凸块的前端与基板的铜电极表面接触。这时,在使得热压接工具上升前,负荷施加在电子器件或金凸块上,电子器件因该负荷受到损伤,或因金凸块和铜电极的接触,金凸块变形,邻接的金凸块之间接触,有时不能维持良好的焊接质量。
发明内容
于是,本发明的目的在于,在通过热熔融的接合金属接合电子器件和基板的电子器件安装装置中,提高焊接质量。
为了解决上述课题,本发明的电子器件安装装置是通过热熔融的接合金属,接合电子器件的电极和基板的电极,将电子器件安装在基板上的电子器件安装装置,其特征在于:
所述电子器件安装装置包括:
焊接工具,朝着与基板接离方向被驱动,将电子器件热压接到基板上;
驱动部,沿着与基板接离方向驱动焊接工具;
位置检测部,检测焊接工具的与基板接离方向的位置;以及
控制部,通过驱动部使得焊接工具的与基板接离方向的位置变化;
控制部包括焊接工具位置保持手段,一边加热电子器件,一边焊接工具从基准位置只以所定距离靠近基板场合,判断电子器件的电极和基板的电极之间的接合金属热熔融,保持那时的焊接工具的相对基板的沿着接离方向的位置。
在本发明的电子器件安装装置中,合适的是,电子器件在电极上形成凸块;基板在电极上形成接合金属膜;控制部进一步包括:相接检测手段,根据来自位置检测部的信号,判断凸块和膜的相接;以及基准位置设定手段,由相接检测手段判断凸块和膜相接场合,将焊接工具的相对基板的位置设定作为基准位置。
在本发明的电子器件安装装置中,合适的是,控制部进一步包括:
第二基准位置设定手段,由基准位置设定手段设定基准位置后,焊接工具的沿着与基板的接离方向的距离从增加变化到减少场合,将焊接工具的相对基板的位置设定作为第二基准位置;以及
第二焊接工具位置保持手段,一边加热电子器件,一边焊接工具从第二基准位置只以第二所定距离靠近基板场合,判断电子器件的电极和基板的电极之间的接合金属热熔融,保持那时的焊接工具的相对基板的沿着接离方向的位置。
本发明的电子器件安装方法是通过热熔融的接合金属,接合电子器件的电极和基板的电极,将电子器件安装在基板上的电子器件安装方法,其特征在于:
所述电子器件安装方法包括:
准备电子器件安装装置的工序,所述电子器件安装装置包括:焊接工具,朝着与基板接离方向被驱动,将电子器件热压接到基板上;驱动部,沿着与基板接离方向驱动焊接工具;以及位置检测部,检测焊接工具的与基板接离方向的位置;以及
焊接工具位置保持工序,一边加热电子器件,一边焊接工具从基准位置只以所定距离靠近基板场合,判断电子器件的电极和基板的电极之间的接合金属热熔融,保持那时的焊接工具的相对基板的沿着接离方向的位置。
在本发明的电子器件安装方法中,合适的是,电子器件在电极上形成凸块;基板在电极上形成接合金属膜;所述电子器件安装方法进一步包括:相接检测工序,根据来自位置检测部的信号,判断凸块和膜的相接;以及基准位置设定工序,由相接检测工序判断凸块和膜相接场合,将焊接工具的相对基板的位置设定作为基准位置。
在本发明的电子器件安装方法中,合适的是,所述电子器件安装方法进一步包括:
第二基准位置设定工序,由基准位置设定工序设定基准位置后,焊接工具的沿着与基板的接离方向的距离从增加变化到减少场合,将焊接工具的相对基板的位置设定作为第二基准位置;以及
第二焊接工具位置保持工序,一边加热电子器件,一边焊接工具从第二基准位置只以第二所定距离靠近基板场合,判断电子器件的电极和基板的电极之间的接合金属热熔融,保持那时的焊接工具的相对基板的沿着接离方向的位置。
下面,说明本发明的效果:
本发明具有在通过热熔融的接合金属接合电子器件和基板的电子器件安装装置中能提高焊接质量的效果。
附图说明
图1是表示作为本发明实施形态的电子器件安装装置的构成的系统图。
图2是表示设置在作为本发明实施形态的电子器件安装装置的电子器件和基板的说明图。
图3是表示用于作为本发明实施形态的电子器件安装装置的直线尺的模式图。
图4是表示作为本发明实施形态的电子器件安装装置动作的流程图。
图5是表示作为本发明实施形态的电子器件安装装置动作中的焊接工具位置、推压负荷、焊锡层的温度变化的说明图。
图6是表示通过作为本发明实施形态的电子器件安装装置,金凸块和焊锡膜进行金焊锡熔融接合的工序的说明图。
图中符号意义如下:
10-基座
11-机架
12-上部凸缘
13-电机
14-导向件
15-升降块
16-滑块
17-螺母
18-进给螺杆
19-电源
20-音圈电机
21-壳体
22-定子
23-线圈
24-前端
25-板簧
26-杆
27-陶瓷加热器
28-焊接工具
31-电子器件
32-电极
33-金凸块
34-基部
35-凸部
41-焊接台
42-基板
43-铜电极
44-焊锡膜
45-焊锡
46-接合金属
48-台加热器
50-控制部
51-CPU
52-存储器
53-焊接程序
54-基准位置设定程序
55-焊接工具位置保持程序
56-第二基准位置设定程序
57-第二焊接工具位置保持程序
58-控制用数据
59-相接检测程序
61-直线尺,61a-直线尺本体,61b-刻度
62-直线尺头
100-电子器件安装装置
具体实施方式
下面,一边参照附图一边说明本发明的实施形态。如图1所示,本发明的电子器件安装装置100包括基座10,从基座10向着上部延伸的机架11,从机架11的上部伸出的上部凸缘12,在机架11侧面沿着上下方向设置的导向件14,沿着上下方向滑动自如地安装在导向件14的滑块16,固定在滑块16、与滑块16一起能沿上下方向移动的升降块15,固定在升降块15的螺母17,拧入螺母17的进给螺杆18,固定在上部凸缘12、使得进给螺杆18旋转的电机13,安装在升降块15下部的音圈电机20,由音圈电机20驱动沿上下方向移动的杆26,安装在杆26前端的陶瓷加热器27,安装在陶瓷加热器27下端、吸附电子器件31的焊接工具28,吸附固定基板42的焊接台41,以及控制部50。电机13和音圈电机20是将焊接工具28沿上下方向驱动的驱动部。
音圈电机20包含壳体21,沿壳体21内周固定的永磁铁的定子22,配置在定子22内周的作为可动元件的线圈23。杆26通过板簧25安装在壳体21。又,呈L字形、在其垂直部分设有细刻度的直线尺61固定在杆26。又,在与直线尺61对向的壳体21的外面,安装读取设在直线尺61的刻度的直线尺头62。直线尺61和直线尺头62构成检测焊接工具28的高度方向位置的位置检测部。从电源19向音圈电机20的线圈23供给驱动用电源。焊接台41在内部设有加热吸附固定在焊接台41的基板42的台加热器48。
控制部50是在内部包含进行信号处理的CPU51和存储器52的计算机,在存储器52中包含进行焊接控制的焊接程序53,控制用数据58,基准位置设定程序54,焊接工具位置保持程序55,第二基准位置设定程序56,第二焊接工具位置保持程序57,相接检测程序59。
电机13与控制部50连接,构成为根据控制部50的指令,控制旋转方向、旋转角度,电源19与控制部50连接,构成为根据控制部50的指令,使得向线圈23输出的电流、电压变化,陶瓷加热器27、台加热器48与控制部50连接,构成为根据控制部50的指令,控制其发热状态。
如图2所示,上下翻转吸附在焊接工具28前端的电子器件31表面设有多个电极32,在该各电极32上形成各金凸块33。金凸块33包括电极32侧的圆板型的基部34以及以圆锥形从基部突出的凸部35。又,吸附固定在焊接台41的基板42在表面形成铜电极43,在铜电极43表面形成焊锡膜44。该焊锡膜44的厚度非常薄,为10~30μm左右。电极32、金凸块33和基板的铜电极43分别对向配置。
如图3所示,直线尺61在直线尺本体61a上以非常细的间距L设有刻度61b。直线尺头62在内部包含:照射直线尺61的刻度61b的光源,使得来自光源的光透过的格子,检测在直线尺61的刻度61b反射的光的受光装置,以及处理从受光装置输入的信号的信号处理部。从光源射出的光通过格子,在直线尺61的刻度61b反射,在光电二极管那样的受光装置上生成干涉条纹。若直线尺61向着刻度61b的长度方向与直线尺头62相对移动,则该干涉条纹移动,从受光装置输出刻度61b的间距L或间距L的1/2周期的正弦波信号。正弦波信号是其位相90度错开的二相正弦波。直线尺头62在信号处理部根据上述二相正弦波的输出差,输出直线尺61和直线尺头62的相对移动量。当刻度61b的间距L例如几μm场合,移动量的检测精度成为1nm左右。
边参照图4至图6边说明通过上述那样构成的电子器件安装装置100将图2所示的电子器件接合在基板42的焊接动作。在此,电子器件包含半导体芯片,晶体管,二极管等。如图2所示,若电子器件31的电极32和基板42的铜电极43位置一致,则控制部50如图4的步骤S101、图5的从时间t1至t2所示,开始使得焊接工具从初始高度H0下降的下降动作。该下降动作通过以下方法实行:使得图1所示的电机13旋转,使得进给螺杆18旋转,而进给螺杆18拧入固定于升降块15的螺母17,这样使得升降块15朝下方向移动。控制部50根据电机13的旋转角度检测下降位置,如图4的步骤S102所示,判断是否下降到图5所示的所定的高度H1。若下降到高度H1,则金凸块33和焊锡膜44、铜电极43如图6(a)所示,虽然相当接近,但金凸块33的凸部35和焊锡膜44之间还存在间隙。在下降动作中,音圈电机20、杆26、焊接工具28成为一体下降,因此,安装在杆26的直线尺61和音圈电机20的壳体21之间不产生高度差,来自直线尺头62的检测信号从初始输出开始不变化。
接着,若控制部50判断下降到所定高度H1,则使得电机13停止,停止下降动作,如图4的步骤S103所示,开始检测图2所示金凸块33的前端与基板42的铜电极43的焊锡膜44相接的位置的检索动作。如图5的从时间t2至t3所示,检索动作是金凸块33的凸部35的前端与焊锡膜44表面相接前使得焊接工具28的高度一点一点下降的动作。该动作通过例如如下那样使得向音圈电机20的线圈23的通电电流变化执行。
若控制部50输出检索动作的下降位置的指令,则电源19根据该下降位置的指令值,使得电流向音圈电机20的线圈23通电。于是,线圈23朝下方向移动,其前端24与杆26上端接触。杆26由板簧25安装在壳体21,因此,流过线圈23的电流增加,线圈23的前端24往下推压杆26,若板簧25因该往下推压力而弯曲,则杆26朝下方向移动,焊接工具28的前端逐渐下降。若杆26朝下方向移动,则固定在杆26的直线尺61和音圈电机20的壳体21之间的相对高度产生差,因此,直线尺头62检测直线尺61的移动量。控制部50根据该直线尺头62的检测信号的变化,取得焊接工具28的下降位置,对下降位置的指令值施加反馈,调整从电源输出的电流。接着,可以执行一点点增加流向线圈23的电流使得焊接工具28前端一点点下降的检索动作。
检索动作期间,控制部50如图4的步骤S104所示,通过相接检测手段监视金凸块33的凸部35的前端是否与焊锡膜44表面相接。若金凸块33的凸部35的前端与焊锡膜44相接,则线圈23朝下方向的移动停止,由直线尺头62检测到的下降位置和检索动作时的下降位置的指令值之间产生差。当该下降位置的指令值和由直线尺头62检测到的下降位置之差超过所定阈值场合,控制部50判断金凸块33的凸部35的前端与焊锡膜44相接(相接检测工序)。直线尺61的上下方向的位置调整为使得当金凸块33的凸部35的前端与焊锡膜44相接时,刻度61b的长度方向的中央来到直线尺头62的正面,因此,直线尺头62能测定以金凸块33的凸部35的前端与焊锡膜44相接的位置为中心朝上下方向的移动量。
如图4的步骤S105、图5的时间t3所示,若控制部50判断金凸块33的凸部35的前端与焊锡膜44相接,则判断焊接工具28到达基准位置高度H2,将那时由直线尺头62检测到的高度H2设定作为焊接工具28的基准高度(基准位置)(基准位置设定)。又,图6(b)表示金凸块33的凸部35的前端与焊锡膜44相接的状态。
若设定了基准高度,则如图4的步骤S106所示,控制部50实行焊接工具28往下推压基板42的推压载荷成为一定的载荷一定动作。该动作也可以例如使得向音圈电机20的线圈23通电的电流值成为大致一定,使得线圈23的前端24往下推压杆26的力成为一定。又,如上所述,也可以设置用于检测焊接工具28往下推压基板42的推压载荷的载荷传感器,控制线圈23的电流变化,使得由该载荷传感器检测到的推压载荷成为一定。如图4的步骤S107所示,控制部50取得由直线尺头62检测到的高度方向的移动量和基准高度H2之差,将从金凸块33的凸部35的前端与焊锡膜44相接时的焊接工具28的高度H2(基准高度)接近基板42的距离,即从基准高度H2的朝下的移动距离作为沉入量D计算。控制部50如图4的步骤S108所示,开始监视沉入量D是否超过所定的阈值。
图5的从时间t1至t3期间,金凸块33的凸部35的前端不与焊锡膜44相接,因此,焊锡膜44的温度因图1所示台加热器48成为与基板42温度相同的温度T0。另一方面,电子器件31由配置在焊接工具28上部的陶瓷加热器27加热到更高温。因此,若在图5的时间t3,金凸块33的凸部35的前端与焊锡膜44相接,则从金凸块33的凸部35的前端向焊锡膜44开始传递热。接着,若成为图5的时间t4,则焊锡膜44的温度开始上升。接着,若从图5的时间t4至时间t5,焊锡膜44温度上升,则伴随其温度上升,铜电极43的温度也上升,其结果,铜电极43和焊锡膜44热膨胀。该期间,往下推压载荷一定,因此,焊接工具28的位置从金凸块33的前端与焊锡膜44相接时的基准高度H2逐渐上升,在时间t5上升到高度H3。这时,焊接工具28的位置是比基准高度H2高的高度H3,因此,如图5所示,从基准高度H2的朝下的移动量D1(=H2-H3)成为负值,因此,沉入量D没有超过所定的阈值。
若在图5所示时间t5,焊锡膜44的温度上升到作为焊锡熔融温度的温度T1,则焊锡膜44开始熔融。这时,控制焊接工具28使得成为推压载荷一定,因此,如图6(c)所示,金凸块33的凸部35沉入到熔融的焊锡膜44之中。即,在图5所示时间t5、高度H3,焊接工具28的高度从上升变化为下降。并且,下降的凸部35的周围被熔融焊锡45围住。这样,若金凸块33的凸部35的前端沉入到焊锡膜44之中,则焊接工具28的高度成为比基准高度H2低的位置,从基准高度H2朝下方向的移动量,即沉入量D成为正值。接着,如图5的时间t6所示,若焊接工具的高度成为高度H4,沉入量D(=H2-H4)成为所定值,则如图6(c)所示,成为在金凸块33的凸部35的前端和基板42的铜电极43之间焊锡膜44以数μm厚度存在的状态。接着,若沉入量D超过所定阈值,则如图4的步骤S109所示,控制部50判断焊锡膜44热熔融,停止载荷一定控制,开始焊接工具28的高度以时间t6的高度H4保持一定的焊接工具位置保持动作。
该动作若举一例,可以在焊接工具28的高度为高度H4的状态下,由直线尺头62检测上下方向移动量,使得向音圈电机20的线圈23的通电电流变化,使得与基准高度H2的差成为所定阈值以下。焊锡膜44的厚度为10~30μm,因此,通过由直线尺头62以1nm程度检测、控制焊接工具28的上下方向位置,如图6(c)所示,在金凸块33的凸部35的前端和基板42的铜电极43之间能维持由焊锡膜44形成的厚度数μm状态。
开始焊接工具位置保持动作同时,如图4的步骤S110所示,控制部50开始冷却动作。该冷却动作是例如断开加热焊接工具28的陶瓷加热器27,同时,向陶瓷加热器27供给冷却空气进行冷却,冷却陶瓷加热器27、焊接工具28、以及吸附在焊接工具28前端的电子器件31。由此,如图6(c)所示,在金凸块33的凸部35的前端和基板42的铜电极43之间,维持焊锡膜44厚度数μm的状态下,冷却焊锡45。接着,如图5的时间t7所示,若焊锡膜44的温度降低到焊锡凝固温度T3,则焊锡凝固,如图6(d)所示,在金凸块33的凸部35的前端和基板42的铜电极43之间,在焊锡膜44的厚度为数μm状态下,焊锡45凝固,成为接合金属46。如图4的步骤S111所示,若经过所定时间,控制部50判断冷却结束,解除焊接工具28对电子器件31的吸附,如图4的步骤S112所示,由电机13使得进给螺杆18旋转,使得焊接工具28上升到初始高度H0,结束电子器件31的焊接。
如上所述,本实施形态的电子器件安装装置100根据焊接工具28的沉入量D判断焊锡膜44熔融,从载荷一定控制移到焊接工具位置保持控制,因此,能将焊接工具28的高度维持在因焊锡熔融引起的微小沉入量D的位置。由此,金凸块33的凸部35的前端位于薄焊锡膜44的厚度中,能在金凸块33的凸部35的前端不接触基板42的铜电极43的状态下,使得焊锡凝固,进行电子器件31的安装。并且,能抑制金凸块33的凸部35和铜电极43接触,能抑制金凸块33变形而与邻接的金凸块33接触成为不良,或因接触载荷而损伤电子器件,能提高焊接质量。
在上述实施形态中,说明将金凸块33的凸部35的前端与焊锡膜44相接状态的焊接工具28高度设定作为基准高度H2,但是,也可以如图5所示时间t5所示,将金凸块33的凸部35的前端与焊锡膜44相接后,焊接工具28的高度从上升变化到下降时的高度H3作为第二基准高度(第二基准位置设定)。这种场合,与上述说明的实施形态相同,在沉入量成为图5所示D2=H3-H4时,从载荷一定控制切换为焊接工具位置保持控制(第二焊接工具位置保持动作)。这种场合也具有与上述实施形态相同的效果。
本发明并不局限于上述说明的实施形态,其包含不脱离由权利要求书规定的本发明的技术范围或本质的全部变更及修正。
Claims (4)
1.一种电子器件安装装置,其特征在于:
所述电子器件安装装置包括:
升降块,沿着基板的接离方向移动;
焊接工具,安装在上述升降块上,朝着与上述基板接离方向被驱动,将电子器件热压接到上述基板上;
第一驱动部,沿着上述基板接离方向驱动上述升降块;
第二驱动部,安装在上述升降块的内部,通过音圈电机沿着上述基板的接离方向驱动上述焊接工具;
位置检测部,检测上述焊接工具相对上述基板接离方向的位置;以及
控制部,通过上述第一驱动部及第二驱动部使得上述焊接工具相对上述基板接离方向的位置发生变化;
上述控制部包括:
相接检测手段,通过上述第一驱动部使得上述焊接工具向着上述基板移动后,通过上述第二驱动部使得上述焊接工具向着上述基板进一步移动,同时,根据来自上述位置检测部的信号,判断凸块和膜的相接;
第一基准位置设定手段,通过上述相接检测手段判断为上述凸块和上述膜相接时,将上述焊接工具相对上述基板的位置设定作为第一基准位置;以及
焊接工具位置保持手段,控制上述第二驱动部,使得上述焊接工具往下推压上述基板的推压载荷成为一定,一边加热上述电子器件,一边使得上述焊接工具从上述第一基准位置靠近上述基板,上述电子器件从上述第一基准位置只以比接合金属的膜厚度小的所定距离靠近上述基板时,判断上述电子器件的电极和上述基板的电极之间的上述接合金属热熔融,通过上述第二驱动部,保持那时的上述焊接工具相对上述基板接离方向的位置;
通过热熔融的接合金属,接合形成在电子器件的电极上的凸块和表面形成接合金属膜的基板的电极,将上述电子器件安装在上述基板上。
2.如权利要求1所述的电子器件安装装置,其特征在于:
上述控制部进一步包括:
第二基准位置设定手段,由上述第一基准位置设定手段设定上述第一基准位置后,上述焊接工具的沿着与上述基板的接离方向的距离从增加变化到减少时,将上述焊接工具相对上述基板的位置设定作为第二基准位置;以及
第二焊接工具位置保持手段,控制上述第二驱动部,使得上述焊接工具往下推压上述基板的推压载荷成为一定,一边加热上述电子器件,一边使得上述焊接工具从上述第二基准位置靠近上述基板,上述电子器件从上述第二基准位置只以在上述第二基准位置和上述第一基准位置之差加上上述所定距离的第二所定距离靠近上述基板时,判断上述电子器件的电极和上述基板的电极之间的上述接合金属热熔融,通过上述第二驱动部,保持那时的上述焊接工具相对上述基板接离方向的位置。
3.一种电子器件安装方法,其特征在于:
所述电子器件安装方法包括:
准备电子器件安装装置的工序,所述电子器件安装装置包括:升降块,沿着基板的接离方向移动;焊接工具,安装在上述升降块上,朝着与上述基板接离方向被驱动,将电子器件热压接到上述基板上;第一驱动部,沿着上述基板接离方向驱动上述升降块;第二驱动部,安装在上述升降块内部,通过音圈电机沿着上述基板的接离方向驱动上述焊接工具;以及位置检测部,检测上述焊接工具相对上述基板接离方向的位置;
相接检测工序,通过上述第一驱动部使得上述焊接工具向着上述基板移动后,通过上述第二驱动部使得上述焊接工具向着上述基板进一步移动,同时,根据来自上述位置检测部的信号,判断凸块和膜的相接;
第一基准位置设定工序,通过上述相接检测工序判断为上述凸块和上述膜相接时,将上述焊接工具相对上述基板的位置设定作为第一基准位置;以及
焊接工具位置保持工序,控制上述第二驱动部,使得上述焊接工具往下推压上述基板的推压载荷成为一定,一边加热上述电子器件,一边使得上述焊接工具从上述第一基准位置靠近上述基板,上述电子器件从上述第一基准位置只以比接合金属的膜厚度小的所定距离靠近上述基板时,判断上述电子器件的电极和上述基板的电极之间的上述接合金属热熔融,通过上述第二驱动部,保持那时的上述焊接工具相对上述基板接离方向的位置;
通过热熔融的接合金属,接合形成在电子器件的电极上的凸块和表面形成接合金属膜的基板的电极,将上述电子器件安装在上述基板上。
4.如权利要求3所述的电子器件安装方法,其特征在于:
所述电子器件安装方法进一步包括:
第二基准位置设定工序,由上述第一基准位置设定工序设定上述第一基准位置后,上述焊接工具的沿着与上述基板的接离方向的距离从增加变化到减少时,将上述焊接工具相对上述基板的位置设定作为第二基准位置;以及
第二焊接工具位置保持工序,控制上述第二驱动部,使得上述焊接工具往下推压上述基板的推压载荷成为一定,一边加热上述电子器件,一边使得上述焊接工具从上述第二基准位置靠近上述基板,上述电子器件从上述第二基准位置只以在上述第二基准位置和上述第一基准位置之差加上上述所定距离的第二所定距离靠近上述基板时,判断上述电子器件的电极和上述基板的电极之间的上述接合金属热熔融,通过上述第二驱动部,保持那时的上述焊接工具相对上述基板接离方向的位置。
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Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102543784B (zh) * | 2012-03-28 | 2014-07-02 | 上海交通大学 | 一种使用镍微针锥的固态热压缩低温键合方法 |
JP6179843B2 (ja) * | 2012-12-04 | 2017-08-16 | 三星電子株式会社Samsung Electronics Co.,Ltd. | 実装装置及び実装方法 |
US9165902B2 (en) * | 2013-12-17 | 2015-10-20 | Kulicke And Soffa Industries, Inc. | Methods of operating bonding machines for bonding semiconductor elements, and bonding machines |
JP5964520B2 (ja) * | 2014-03-28 | 2016-08-03 | アスリートFa株式会社 | 電子部品接合装置および電子部品接合方法 |
JP2016062960A (ja) * | 2014-09-16 | 2016-04-25 | 株式会社東芝 | 半導体装置の製造装置および半導体装置の製造方法 |
CN107211570B (zh) * | 2015-02-13 | 2020-02-07 | 株式会社富士 | 安装处理单元、安装装置及安装处理单元的控制方法 |
JP6581389B2 (ja) * | 2015-05-12 | 2019-09-25 | 東芝メモリ株式会社 | 半導体装置の製造装置及び製造方法 |
JP6553459B2 (ja) | 2015-09-09 | 2019-07-31 | 東芝メモリ株式会社 | 半導体装置の製造方法および実装装置 |
JP6681241B2 (ja) * | 2016-03-30 | 2020-04-15 | アスリートFa株式会社 | 電子部品実装装置および電子部品製造方法 |
US10050008B1 (en) * | 2017-01-24 | 2018-08-14 | Asm Technology Singapore Pte Ltd | Method and system for automatic bond arm alignment |
US10600755B2 (en) | 2017-08-10 | 2020-03-24 | Amkor Technology, Inc. | Method of manufacturing an electronic device and electronic device manufactured thereby |
KR20200021179A (ko) | 2018-08-20 | 2020-02-28 | 김순호 | 전자부품 실장장치 |
JP7207152B2 (ja) * | 2019-05-16 | 2023-01-18 | 株式会社デンソー | スリーブはんだ付け装置および電子装置の製造方法 |
WO2021202211A1 (en) * | 2020-03-29 | 2021-10-07 | Kulicke And Soffa Industries, Inc. | Methods of optimizing clamping of a semiconductor element against a support structure on a wire bonding machine, and related methods |
CN115997278A (zh) | 2020-08-19 | 2023-04-21 | 株式会社新川 | 基板保持具以及接合系统和接合方法 |
JP2023548578A (ja) * | 2020-11-05 | 2023-11-17 | クリック アンド ソッファ インダストリーズ、インク. | ワイヤボンディング装置におけるボンディング力の精度を監視する方法を含む、ワイヤボンディング装置を動作させる方法、および関連する方法 |
DE102020007235A1 (de) * | 2020-11-26 | 2022-06-02 | Mühlbauer Gmbh & Co. Kg | Thermokompressionsvorrichtung und Verfahren zum Verbinden von elektrischen Bauteilen mit einem Substrat |
CN112601446B (zh) * | 2020-12-27 | 2022-08-23 | 苏州新明高科技有限公司 | 一种避免扭曲变形的高精度stm贴片机 |
CN113977028B (zh) * | 2021-10-28 | 2023-04-25 | 恩纳基智能科技无锡有限公司 | 一种共晶焊接设备 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05109840A (ja) * | 1991-10-18 | 1993-04-30 | Toshiba Corp | インナリ−ドボンデイング装置 |
JP3399323B2 (ja) | 1997-11-10 | 2003-04-21 | 松下電器産業株式会社 | 半田バンプ付電子部品の熱圧着方法 |
JP3399324B2 (ja) | 1997-11-10 | 2003-04-21 | 松下電器産業株式会社 | 半田バンプ付電子部品の熱圧着方法 |
US6131795A (en) | 1997-11-10 | 2000-10-17 | Matsushita Electric Industrial Co., Ltd. | Thermal compression bonding method of electronic part with solder bump |
US6706130B1 (en) * | 1999-10-04 | 2004-03-16 | Matsushita Electric Industrial Co., Ltd. | Method and device for frictional connection and holding tool used for the frictional connection device |
JP3487264B2 (ja) * | 2000-07-06 | 2004-01-13 | 松下電器産業株式会社 | 電子部品のボンディング装置 |
JP2002090114A (ja) * | 2000-07-10 | 2002-03-27 | Mitsutoyo Corp | 光スポット位置センサ及び変位測定装置 |
JP4445163B2 (ja) | 2001-07-13 | 2010-04-07 | パナソニック株式会社 | 電子部品の実装装置 |
US7296727B2 (en) | 2001-06-27 | 2007-11-20 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for mounting electronic components |
JP3788351B2 (ja) * | 2002-01-21 | 2006-06-21 | 松下電器産業株式会社 | 電子部品のボンディング装置および電子部品のボンディングツール |
JP4077637B2 (ja) * | 2002-02-25 | 2008-04-16 | 株式会社ミツトヨ | 格子干渉型変位測定装置 |
JP3966217B2 (ja) * | 2003-04-23 | 2007-08-29 | 松下電器産業株式会社 | ボンディング装置およびボンディングツール |
JPWO2004107432A1 (ja) * | 2003-05-29 | 2006-07-20 | 富士通株式会社 | 電子部品の実装方法、取外し方法及びその装置 |
JP2005142313A (ja) * | 2003-11-06 | 2005-06-02 | Tdk Corp | 実装処理装置用接触開始検出装置及び該装置を備えた実装処理装置 |
US7513284B2 (en) * | 2004-01-21 | 2009-04-07 | Panasonic Corporation | Compression device |
TW200628029A (en) * | 2004-12-06 | 2006-08-01 | Matsushita Electric Ind Co Ltd | Component mounting apparatus and component mounting method |
WO2007066559A1 (ja) * | 2005-12-06 | 2007-06-14 | Toray Engineering Co., Ltd. | チップ実装装置およびチップ実装方法 |
JP4773197B2 (ja) * | 2005-12-22 | 2011-09-14 | 日本アビオニクス株式会社 | リフローハンダ付け方法および装置 |
US7508115B2 (en) * | 2005-12-28 | 2009-03-24 | Tdk Corporation | Horn, horn unit, and bonding apparatus using same |
JP4825029B2 (ja) * | 2006-03-17 | 2011-11-30 | 富士通セミコンダクター株式会社 | ボンディング装置及びボンディング方法 |
JP2008130727A (ja) * | 2006-11-20 | 2008-06-05 | Renesas Technology Corp | 半導体装置の製造方法及びそれに用いられるチップボンダ |
JP5068571B2 (ja) * | 2007-03-29 | 2012-11-07 | 芝浦メカトロニクス株式会社 | 電子部品の実装装置 |
JP5003590B2 (ja) * | 2008-05-16 | 2012-08-15 | 日本電気株式会社 | 電子部品の製造装置及びその製造方法 |
-
2010
- 2010-06-04 JP JP2010128480A patent/JP4880055B2/ja active Active
-
2011
- 2011-03-09 TW TW100107875A patent/TWI489571B/zh active
- 2011-06-02 CN CN201180026976.0A patent/CN102918936B/zh active Active
- 2011-06-02 WO PCT/JP2011/062664 patent/WO2011152479A1/ja active Application Filing
- 2011-06-02 KR KR1020127029892A patent/KR101331548B1/ko active IP Right Grant
- 2011-06-02 SG SG2012088951A patent/SG185817A1/en unknown
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2012
- 2012-12-03 US US13/691,976 patent/US20130153644A1/en not_active Abandoned
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2015
- 2015-09-30 US US14/871,622 patent/US9603262B2/en active Active
Also Published As
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KR101331548B1 (ko) | 2013-11-20 |
CN102918936A (zh) | 2013-02-06 |
US20130153644A1 (en) | 2013-06-20 |
WO2011152479A1 (ja) | 2011-12-08 |
JP2011254032A (ja) | 2011-12-15 |
TWI489571B (zh) | 2015-06-21 |
TW201205701A (en) | 2012-02-01 |
JP4880055B2 (ja) | 2012-02-22 |
US20160029494A1 (en) | 2016-01-28 |
KR20130005303A (ko) | 2013-01-15 |
SG185817A1 (en) | 2013-01-30 |
US9603262B2 (en) | 2017-03-21 |
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