CN111149195A - 接合时的半导体晶片的加热条件设定方法以及非导电性膜的粘度测量方法以及接合装置 - Google Patents

接合时的半导体晶片的加热条件设定方法以及非导电性膜的粘度测量方法以及接合装置 Download PDF

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CN111149195A
CN111149195A CN201880062410.5A CN201880062410A CN111149195A CN 111149195 A CN111149195 A CN 111149195A CN 201880062410 A CN201880062410 A CN 201880062410A CN 111149195 A CN111149195 A CN 111149195A
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temperature
viscosity
bonding
conductive film
heating
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中村智宣
前田彻
永井训
佐伯吉浩
渡辺治
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Shinkawa Ltd
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Shinkawa Ltd
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Abstract

一种使用NCF接合半导体芯片时的半导体芯片的加热条件设定方法，其根据表示各种温度上升率中的NCF的相对于温度的粘度的变化的粘度特性图、及表示以同一个温度上升率使加热开始温度变化时的NCF的相对于温度的粘度的变化的加热开始温度特性图，设定加热开始温度与温度上升率。

Description

接合时的半导体晶片的加热条件设定方法以及非导电性膜的 粘度测量方法以及接合装置
技术领域
本发明涉及一种接合时的半导体芯片的加热条件设定方法以及使用接合装置的非导电性膜的粘度测量方法及接合装置的结构。
背景技术
已提出有一种上下夹入对半导体芯片进行树脂密封时的树脂来进行加热而使其加热熔融，并检测此时的树脂的扩展，由此测量树脂的粘度的方法(例如，参照专利文献1)。
另外，已知有一种根据利用平行平板夹入圆柱状的试样并施加了负荷时的厚度的变化来测量试样的粘度的方法(参照非专利文献1)
现有技术文献
专利文献
专利文献1：日本专利特开2008-145273号公报
非专利文献
非专利文献1：白石裕等，《利用贯入法、平行板变形-旋转法的组合的广域粘度计的开发》，日本金属学会志第60卷第2号(1996)，184页～191页
发明内容
发明所要解决的问题
此外，正在采用使在电极上形成有金属凸块的半导体芯片反转，并使金属凸块熔融而与基板的电极之间形成合金，由此将半导体芯片接合于基板的倒装芯片接合(flipchip bonding)。在所述接合中，为了填充半导体芯片与基板之间的间隙而使用热硬化性的非传导性膜(以下，称为非导电性膜(Non-Conductive Film，NCF))。NCF粘附于半导体芯片的金属凸块上，当对半导体芯片进行了加热时，在金属凸块熔融之前软化并进入半导体芯片与基板之间，若进一步提高温度，则开始热硬化。而且，在NCF开始热硬化后，金属凸块熔融而与基板的电极之间形成合金，由此将半导体芯片接合于基板。
然而，根据NCF的种类，存在加热时的硬化延迟，在NCF为软化状态下开始金属凸块的熔融的情况。在此情况下，因已软化的NCF的流动，而存在已熔融的金属凸块被冲走，将半导体芯片与基板接合的合金的形状歪曲，无法将半导体芯片与基板适宜地接合的情况。
因此，为了进行适宜的接合，重要的是知道相对于温度的NCF的粘度的变化特性。但是，相对于温度的NCF的粘度的变化特性因NCF的加热速度、加热开始温度等各种因素而大幅度变化。因此，必须使NCF的加热速度、加热开始温度等各种参数变化来进行接合试验，从而决定接合时的半导体芯片的加热条件，存在接合的条件设定花费时间这一问题。
因此，本发明将可在短时间内设定接合时的加热条件作为目的。
解决问题的技术手段
本发明的加热条件设定方法是使用非导电性膜接合半导体芯片时的半导体芯片的加热条件设定方法，其特征在于：根据粘度特性图及加热开始温度特性图的任一者或两者，设定加热开始温度与温度上升率，所述粘度特性图表示各种温度上升率中的非导电性膜的相对于温度的粘度的变化，所述加热开始温度特性图表示以同一个温度上升率使加热开始温度变化时的非导电性膜的相对于温度的粘度的变化。
在本发明的加热条件设定方法中，接合是使形成于半导体芯片的金属凸块熔融而与基板或其它半导体芯片的电极之间形成合金，由此将半导体芯片接合于基板或其它半导体芯片，并使非导电性膜热硬化来填充半导体芯片与基板或其它半导体芯片之间的间隙者，且加热开始温度与温度上升率的设定也可设为选择在比金属凸块的熔融开始温度低的温度下非导电性膜的粘度变成硬化粘度以上的加热开始温度与温度上升率的组合。
在本发明的加热条件设定方法中，粘度特性图也可为如下者：在将非导电性膜夹入接合平台与接合工具之间并以固定的负荷进行了按压的状态下，一面以各种温度上升率使非导电性膜的温度上升，一面测量接合工具的下降量，根据接合工具的下降量算出非导电性膜的粘度，并作为各种温度上升率中的非导电性膜的相对于温度的粘度的变化特性而输出。
在本发明的加热条件设定方法中，加热开始温度特性图也可为如下者：在将非导电性膜夹入接合平台与接合工具之间并以固定的负荷进行了按压的状态下，一面以同一个温度上升率使非导电性膜的温度自各种加热开始温度上升，一面测量接合工具的下降量，根据接合工具的下降量算出非导电性膜的粘度，并作为以同一个温度上升率使加热开始温度变化时的非导电性膜的相对于温度的粘度的变化特性而输出。
在本发明的加热条件设定方法中，也可根据经设定的加热开始温度与温度上升率，设定对于对半导体芯片进行加热的加热器的温度指令。
由此，本发明的加热条件设定方法可在短时间内设定接合时的加热条件。
本发明的粘度测量方法是使用接合装置的非导电性膜的粘度测量方法，其特征在于：在将非导电性膜夹入接合平台与接合工具之间并以固定的负荷进行了按压的状态下，一面以规定的温度上升率使非导电性膜的温度上升，一面测量接合工具的下降量，且根据接合工具的下降量算出非导电性膜的粘度。
本发明的接合装置的特征在于包括：接合平台，载置非导电性膜；接合工具，与接合平台一同夹入非导电性膜；接合头，在上下方向上驱动接合工具；加热器，内置于接合头；以及控制部，调整接合头的高度与加热器的输出，控制部在使接合头下降并以固定的负荷对非导电性膜进行了按压的状态下，一面通过加热器以规定的温度上升率使非导电性膜的温度上升，一面测量接合工具的下降量，且根据接合工具的下降量算出非导电性膜的粘度。
由此，可利用接合装置简便地测量非导电性膜的粘度。
发明的效果
本发明可在短时间内设定接合时的加热条件。
附图说明
图1是表示本发明的实施方式中的半导体芯片的加热条件设定方法的流程图。
图2是表示利用接合装置进行非导电性膜(NCF)的粘度测量的状态的说明图。
图3是粘度特性图的一例。
图4是加热开始温度特性图的一例。
图5是表示根据所选择的加热开始温度与温度上升率的NCF的温度的时间变化与加热器温度指令值的图表。
图6是表示以图5中所设定的加热器温度指令值进行了接合时的半导体芯片、NCF的温度的时间变化与NCF的粘度的时间变化的图表。
具体实施方式
以下，一面参照附图，一面对实施方式的加热条件设定方法进行说明。如图1所示，实施方式的加热条件设定方法包括：图1的步骤S101中所示的粘度特性图生成步骤，图1的步骤S102中所示的加热开始温度特性图生成步骤，图1的步骤S103中所示的加热开始温度、温度上升率选择步骤，及图1的步骤S104中所示的加热器温度指令设定步骤。
首先一面参照图2、3，一面对粘度特性图生成步骤进行说明。如图2所示，NCF 40的粘度的测量是使用接合装置100来进行。
如图2所示，接合装置100包括：接合平台10，将半导体芯片32真空吸附于表面；接合工具24，真空吸附半导体芯片31；接合头20；以及控制部90。接合头20包括：底座21；加热块22，安装于底座21；以及驱动部25，在上下方向上驱动底座21。接合工具24通过真空吸附而固定于加热块22。在接合平台10内置有对半导体芯片32进行加热的加热器12，在加热块22内置有对半导体芯片31进行加热的加热器23。在加热器12、加热器23连接有调整朝加热器12、加热器23的供给电力的控制器14、控制器26。控制部90是在内部包括中央处理器(Central Processing Unit，CPU)与存储器的计算机。
接合头20的驱动部25根据控制部90的指令而在上下方向上驱动接合工具24，并且将接合工具24的高度与接合工具24的按压负荷F输出至控制部90。在加热块22安装有检测加热块22的温度的温度传感器91。另外，在接合装置100安装有检测NCF 40的温度的温度传感器92。温度传感器92例如也可为非接触式的温度检测器。温度传感器91、温度传感器92所获取的温度数据被输入至控制部90。
如图2所示，将半导体芯片32真空吸附于接合平台10上，并将厚度为H的NCF 40载置于半导体芯片32上。另外，使半导体芯片31真空吸附于接合工具24的表面。而且，控制部90使接合头20下降来使半导体芯片31抵接于NCF 40上，而将NCF 40夹入半导体芯片31、半导体芯片32之间。由此，NCF 40经由半导体芯片31、半导体芯片32而夹入接合平台10与接合工具24之间。然后，控制部90使接合头20略微下降，而以固定的按压负荷F按压NCF。此时，接合平台10的温度为温度TB，半导体芯片31的温度为温度T0。
控制部90一面通过驱动部25以按压负荷F变成固定的方式进行调整，一面调节控制器26来增加朝加热器23的通电电力，而使NCF 40的温度以规定的温度上升率上升。若NCF40的温度上升，则NCF 40软化且高度H减少，接合工具24下降。控制部90通过接合头20的下降量来检测高度H的变化。
此处，若将施加至NCF 40的按压负荷设为F(N)，将NCF 40的厚度设为H(m)，将时间设为t(sec)，将试样的NCF 40的体积设为Q(m3)，则NCF 40的粘度V(Pa·S)可通过下式来算出(例如，参照非专利文献1)。
V＝2*π*F*H5/3*Q*(-dH/dt)(2*π*H3+Q)----(式1)
控制部90将温度上升率设为A(℃/s)，使NCF 40的温度自T0起上升，每当接合工具24的高度减少时通过(式1)来算出NCF 40的粘度V。于是，可获得如图3的实线a所示的特性曲线。如图3的实线a所示，若温度上升，则NCF 40软化且粘度V降低至硬化粘度VS以下为止。若自此进一步提高温度，则NCF 40的热硬化开始，在温度T1下超过硬化粘度VS。其后，NCF40的粘度通过热硬化而急速地上升。
若将温度上升率设为比A(℃/s)大的B(℃/s)，并进行相同的试验，则如点划线b所示，NCF 40因温度的上升而软化后，通过热硬化而在温度T2(T2＞T1)下超过硬化粘度VS，其后，粘度V急速地上升。同样地，在温度上升率为C(℃/s)(C＞B)的情况下，如双点划线c所示，NCF 40通过热硬化而在温度T3(T3＞T2)下超过硬化粘度VS，在温度上升率为D(℃/s)(D＞C)的情况下，如圆圈划线d所示，在温度T4(T4＞T3)下超过硬化粘度VS。
如此，若对NCF 40进行加热，则温度上升率变得越大，粘度V通过热硬化而超过硬化粘度VS的温度变得越高。
粘度特性图50是将如图3中所示的实线a、点划线b、双点划线c、圆圈划线d那样，表示各种温度上升率中的非导电性膜的相对于温度的粘度V的变化特性的线汇集于一个图表中而成的图。图3的温度TW表示金属凸块，例如焊料金属凸块的熔融开始温度。其后对此进行说明。
继而，一面参照图4，一面对加热开始温度特性图60进行说明。NCF 40的粘度测量方法与之前说明的粘度特性图的生成的情况相同，因此省略说明。
图4表示加热开始温度特性图60的一例。图4中所示的双点划线c与之前说明的图3的双点划线c相同，表示加热开始温度为T0，温度上升率为C(℃/s)时的相对于NCF 40的温度的NCF 40的粘度V的变化。图4中所示的三角划线c1表示加热开始温度为T01(T01＞T0)，温度上升率为与双点划线c相同的C(℃/s)时的相对于NCF 40的温度的NCF 40的粘度V的变化。另外，图4中所示的×划线c2表示加热开始温度为T02(T02＞T01)，温度上升率为与双点划线c相同的C(℃/s)时的相对于NCF 40的温度的NCF 40的粘度V的变化。
如图4所示，加热开始温度变得越高，粘度V超过硬化粘度VS的温度变得越低。如此，加热开始温度特性图是将如图4中所示的双点划线c、三角划线c1、×划线c2那样，表示以同一个温度上升率使加热开始温度变化时的非导电性膜的相对于温度的粘度的变化特性的线汇集于一个图表中而成的图。
继而，对图1的步骤S103中所示的加热开始温度、温度上升率的选择进行说明。
当进行使形成于半导体芯片31的金属凸块熔融而与基板的电极之间形成合金，由此将半导体芯片31接合于基板，并使NCF 40热硬化来填充半导体芯片31与基板之间的间隙的接合时，重要的是在金属凸块熔融之前NCF 40软化并进入半导体芯片31与基板之间，在NCF 40开始热硬化后金属凸块熔融而与基板的电极之间形成合金。因此，加热开始温度与温度上升率必须设为在比金属凸块的熔融开始温度TW低的温度下NCF 40的粘度V变成硬化粘度VS以上的加热开始温度与温度上升率的组合。
首先，对使用图3中所示的粘度特性图50选择加热开始温度与温度上升率的组合的情况进行说明。图4的TW是金属凸块的熔融开始温度。在加热开始温度为T0的情况下，且温度上升率为A(℃/s)、B(℃/s)的情况下，如实线a、点划线b所示，在比金属凸块的熔融开始温度TW低的温度T01、T02下NCF 40的粘度V变成硬化粘度VS以上，因此加热开始温度T0，温度上升率A、温度上升率B是可采用的组合。另一方面，在温度上升率为(℃/s)、D(℃/s)的情况下，如双点划线c、圆圈划线d所示，若温度不变得比金属凸块的熔融开始温度TW高，则NCF 40的粘度V不变成硬化粘度VS以上。因此，金属凸块的熔融状态与NCF的流动状态重叠，已熔融的金属凸块因NCF 40的流动而自电极上流动，无法进行适宜的接合。因此，加热开始温度T0，温度上升率C、温度上升率D是无法采用的组合。
此处，温度上升率越高，越可缩短接合的任务时间，因此选择可采用的加热开始温度与温度上升率的组合之中，温度上升率大的组合。
即，自图4的粘度特性图中，选择在比金属凸块的熔融开始温度TW低的温度下粘度V变成硬化粘度VS以上的加热开始温度与温度上升率的组合，其中，选择温度上升率t02最高的组合作为加热条件。
另外，以温度上升率更大的C(℃/s)进行接合时的加热条件参照图4中所示的加热开始温度特性图60，选择作为在比金属凸块的熔融开始温度TW低的温度下粘度V变成硬化粘度VS以上的加热开始温度与温度上升率的组合的加热开始温度为T02、温度上升率为C(℃/s)的组合作为加热条件。
在以上的说明中，根据图4中所示的加热开始温度特性图60中记载的线选择加热条件，但并不限定于此，例如也可对三角划线c1与×划线c2进行内插来将加热开始温度设定成比T02略低的温度。
如以上所说明那样，实施方式的加热条件设定方法无需以许多加热条件进行试验接合，因此可在短时间内进行加热条件的设定。
继而，如图1的步骤S104所示，对根据所选择的加热开始温度与温度上升率，设定加热器23的温度指令的步骤进行说明。
图5(a)是表示加热开始温度为T02，温度上升率为C(℃/s)时的半导体芯片31或NCF 40的相对于时间的温度上升的曲线。在对于加热器23的温度指令与半导体芯片31或NCF 40的温度上升之间存在时间延迟。所述时间延迟通过事先进行的试验等而先进行数值模型的构成、参数设定。然后，使用所述设定参数与数值模型，如图5(b)那样生成对于加热器23的温度指令，所述对于加热器23的温度指令是如变成如图5(a)的温度变化那样的温度指令。而且，在接合时，以图5(b)中所示的温度指令控制加热器23。其结果，如图6所示，可变成如NCF 40的粘度V刚到达硬化粘度VS之后金属凸块熔融那样的有效率的接合条件。如此，根据本实施方式的加热条件设定方法，可在短时间内进行接合条件的设定。
以上的说明是对使用粘度特性图50选择加热开始温度与温度上升率的组合的情况、根据加热开始温度特性图60中记载的线选择加热条件的情况进行了说明，但并不限定于如所述那样使用任一个图选择加热开始温度与温度上升率的组合，也可使用两个图选择加热开始温度与温度上升率的组合。
符号的说明
10：接合平台
12：加热器
14、26：控制器
20：接合头
21：底座
22：加热块
23：加热器
24：接合工具
25：驱动部
31、32：半导体芯片
50：粘度特性图
60：加热开始温度特性图
90：控制部
91、92：温度传感器
100：接合装置

Claims (9)

1.一种加热条件设定方法，是使用非导电性膜接合半导体晶片时的半导体晶片的加热条件设定方法，其特征在于，
根据粘度特性图及加热开始温度特性图的任一者或两者，设定加热开始温度与温度上升率，所述粘度特性图表示各种温度上升率中的非导电性膜的相对于温度的粘度的变化，所述加热开始温度特性图表示以同一个温度上升率使加热开始温度变化时的非导电性膜的相对于温度的粘度的变化。
2.根据权利要求1所述的加热条件设定方法，其特征在于，
接合是使形成于半导体晶片的金属凸块熔融而与基板或其它半导体晶片的电极之间形成合金，由此将半导体晶片接合于基板或其它半导体晶片上，并使非导电性膜热硬化来填充半导体晶片与基板或其它半导体晶片之间的间隙者，且
加热开始温度与温度上升率的设定选择在比金属凸块的熔融开始温度低的温度下非导电性膜的粘度变成硬化粘度以上的加热开始温度与温度上升率的组合。
3.根据权利要求1或2所述的加热条件设定方法，其中
粘度特性图是如下者：在将非导电性膜夹入接合平台与接合工具之间并以固定的负荷进行了按压的状态下，一面以各种温度上升率使非导电性膜的温度上升，一面测量接合工具的下降量，根据接合工具的下降量算出非导电性膜的粘度，并作为各种温度上升率中的非导电性膜的相对于温度的粘度的变化特性而输出。
4.根据权利要求1或2所述的加热条件设定方法，其中
加热开始温度特性图是如下者：在将非导电性膜夹入接合平台与接合工具之间并以固定的负荷进行了按压的状态下，一面以同一个温度上升率使非导电性膜的温度自各种加热开始温度上升，一面测量接合工具的下降量，根据接合工具的下降量算出非导电性膜的粘度，并作为以同一个温度上升率使加热开始温度变化时的非导电性膜的相对于温度的粘度的变化特性而输出。
5.根据权利要求1或2所述的加热条件设定方法，其中
根据经设定的加热开始温度与温度上升率，设定对于对半导体晶片进行加热的加热器的温度指令。
6.根据权利要求3所述的加热条件设定方法，其中
根据经设定的加热开始温度与温度上升率，设定对于对半导体晶片进行加热的加热器的温度指令。
7.根据权利要求4所述的加热条件设定方法，其中
根据经设定的加热开始温度与温度上升率，设定对于对半导体晶片进行加热的加热器的温度指令。
8.一种非导电性膜的粘度测量方法，是使用接合装置的非导电性膜的粘度测量方法，
在将非导电性膜夹入接合平台与接合工具之间并以固定的负荷进行了按压的状态下，一面以规定的温度上升率使非导电性膜的温度上升，一面测量接合工具的下降量，且
根据接合工具的下降量算出非导电性膜的粘度。
9.一种接合装置，其特征在于，包括：
接合平台，载置非导电性膜；
接合工具，与所述接合平台一同夹住所述非导电性膜；
接合头，在上下方向上驱动所述接合工具；
加热器，内置于所述接合头；以及
控制部，调整所述接合头的高度与所述加热器的输出，
所述控制部在使所述接合头下降并以固定的负荷对所述非导电性膜进行了按压的状态下，一面通过所述加热器以规定的温度上升率使所述非导电性膜的温度上升，一面测量所述接合工具的下降量，且
根据所述接合工具的下降量算出所述非导电性膜的粘度。
CN201880062410.5A 2017-09-28 2018-09-14 接合时的半导体晶片的加热条件设定方法以及非导电性膜的粘度测量方法以及接合装置 Pending CN111149195A (zh)

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