WO2019065309A1 - ボンディングの際の半導体チップの加熱条件設定方法及び非導電性フィルムの粘度測定方法ならびにボンディング装置 - Google Patents
ボンディングの際の半導体チップの加熱条件設定方法及び非導電性フィルムの粘度測定方法ならびにボンディング装置 Download PDFInfo
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 103
- 239000004065 semiconductor Substances 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 19
- 238000002844 melting Methods 0.000 claims description 16
- 230000008018 melting Effects 0.000 claims description 16
- 238000001723 curing Methods 0.000 claims description 14
- 230000000630 rising effect Effects 0.000 claims description 13
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- 238000003825 pressing Methods 0.000 claims description 7
- 238000013007 heat curing Methods 0.000 claims description 3
- 238000000691 measurement method Methods 0.000 claims description 3
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 230000007423 decrease Effects 0.000 description 3
- 238000001029 thermal curing Methods 0.000 description 3
- 230000003111 delayed effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
Definitions
- the heating start temperature characteristic map is a state in which the nonconductive film is sandwiched between the bonding stage and the bonding tool and pressed with a constant load from the various heating start temperatures to the same temperature. While lowering the temperature of the nonconductive film at a rising rate, measure the descent amount of the bonding tool, calculate the viscosity of the nonconductive film based on the descent amount of the bonding tool, and start the heating start temperature at the same temperature rising rate. It may be output as a change characteristic of viscosity with respect to the temperature of the nonconductive film when changing.
- the bonding apparatus 100 includes a bonding stage 10 for vacuum-sucking the semiconductor chip 32 on the surface, a bonding tool 24 for vacuum-sucking the semiconductor chip 31, a bonding head 20, and a control unit 90.
- the bonding head 20 includes a base 21, a heat block 22 attached to the base 21, and a drive unit 25 for driving the base 21 in the vertical direction.
- the bonding tool 24 is fixed to the heat block 22 by vacuum suction.
- the bonding stage 10 incorporates a heater 12 for heating the semiconductor chip 32, and the heat block 22 incorporates a heater 23 for heating the semiconductor chip 31. Connected to the heaters 12 and 23 are controllers 14 and 26 for adjusting the power supplied to the heaters 12 and 23, respectively.
- the control unit 90 is a computer that internally includes a CPU and a memory.
- the drive unit 25 of the bonding head 20 drives the bonding tool 24 in the vertical direction based on the command of the control unit 90, and outputs the height of the bonding tool 24 and the pressing load F of the bonding tool 24 to the control unit 90.
- the heat block 22 is attached with a temperature sensor 91 for detecting the temperature of the heat block 22. Further, a temperature sensor 92 for detecting the temperature of the NCF 40 is attached to the bonding apparatus 100.
- the temperature sensor 92 may be, for example, a non-contact temperature sensor. The temperature data acquired by the temperature sensors 91 and 92 is input to the control unit 90.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
Abstract
Description
V=2*π*F*H5/3*Q*(-dH/dt)(2*π*H3+Q) ---- (式1)
Claims (9)
- 非導電性フィルムを用いて半導体チップをボンディングする際の半導体チップの加熱条件設定方法であって、
各種の温度上昇率における非導電性フィルムの温度に対する粘度の変化を示す粘度特性マップと、同一の温度上昇率で加熱開始温度を変化させた場合の非導電性フィルムの温度に対する粘度の変化を示す加熱開始温度特性マップと、のいずれか一方または両方に基づいて加熱開始温度と温度上昇率とを設定すること、
を特徴とする加熱条件設定方法。 - 請求項1に記載の加熱条件設定方法であって、
ボンディングは、半導体チップに形成された金属バンプを溶融させて基板あるいは他の半導体チップの電極との間で合金を形成することにより半導体チップを基板または他の半導体チップに接合し、非導電性フィルムを熱硬化させて半導体チップと基板あるいは他の半導体チップとの間の隙間を充填するものであり、
加熱開始温度と温度上昇率の設定は、金属バンプの溶融開始温度よりも低い温度で非導電性フィルムの粘度が硬化粘度以上となる加熱開始温度と温度上昇率の組み合わせを選択すること、
を特徴とする加熱条件設定方法。 - 請求項1または2に記載の加熱条件設定方法であって、
粘度特性マップは、
ボンディングステージとボンディングツールの間に非導電性フィルムを挟みこんで一定の荷重で押圧した状態で、各種の温度上昇率で非導電性フィルムの温度を上昇させながら、ボンディングツールの降下量を測定し、ボンディングツールの降下量に基づいて非導電性フィルムの粘度を算出し、各種の温度上昇率における非導電性フィルムの温度に対する粘度の変化特性として出力したものである加熱条件設定方法。 - 請求項1または2に記載の加熱条件設定方法であって、
加熱開始温度特性マップは、
ボンディングステージとボンディングツールの間に非導電性フィルムを挟みこんで一定の荷重で押圧した状態で、各種の加熱開始温度から同一の温度上昇率で非導電性フィルムの温度を上昇させながら、ボンディングツールの降下量を測定し、ボンディングツールの降下量に基づいて非導電性フィルムの粘度を算出し、同一の温度上昇率で加熱開始温度を変化させた場合の非導電性フィルムの温度に対する粘度の変化特性として出力したものである加熱条件設定方法。 - 請求項1または2に記載の加熱条件設定方法であって、
設定した加熱開始温度と温度上昇率とに基づいて、半導体チップを加熱するヒータへの温度指令を設定する加熱条件設定方法。 - 請求項3に記載の加熱条件設定方法であって、
設定した加熱開始温度と温度上昇率とに基づいて、半導体チップを加熱するヒータへの温度指令を設定する加熱条件設定方法。 - 請求項4に記載の加熱条件設定方法であって、
設定した加熱開始温度と温度上昇率とに基づいて、半導体チップを加熱するヒータへの温度指令を設定する加熱条件設定方法。 - ボンディング装置を用いた非導電性フィルムの粘度測定方法であって、
ボンディングステージとボンディングツールの間に非導電性フィルムを挟みこんで一定の荷重で押圧した状態で、所定の温度上昇率で非導電性フィルムの温度を上昇させながら、ボンディングツールの降下量を測定し、
ボンディングツールの降下量に基づいて非導電性フィルムの粘度を算出する非導電性フィルムの粘度測定方法。 - ボンディング装置であって、
非導電性フィルムが載置されるボンディングステージと、
前記ボンディングステージと共に前記非導電性フィルムを挟み込むボンディングツールと、
前記ボンディングツールを上下方向に駆動するボンディングヘッドと、
前記ボンディングヘッドに内蔵されたヒータと、
前記ボンディングヘッドの高さと前記ヒータの出力とを調整する制御部と、を備え、
前記制御部は、
前記ボンディングヘッドを降下させて前記非導電性フィルムを一定の荷重で押圧した状態で、前記ヒータによって所定の温度上昇率で前記非導電性フィルムの温度を上昇させながら、前記ボンディングツールの降下量を測定し、
前記ボンディングツールの降下量に基づいて前記非導電性フィルムの粘度を算出すること、
を特徴とするボンディング装置。
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US16/651,334 US11201132B2 (en) | 2017-09-28 | 2018-09-14 | Method for setting conditions for heating semiconductor chip during bonding, method for measuring viscosity of non-conductive film, and bonding apparatus |
CN201880062410.5A CN111149195A (zh) | 2017-09-28 | 2018-09-14 | 接合时的半导体晶片的加热条件设定方法以及非导电性膜的粘度测量方法以及接合装置 |
KR1020207011353A KR102353013B1 (ko) | 2017-09-28 | 2018-09-14 | 본딩시의 반도체 칩의 가열 조건 설정 방법, 비도전성 필름의 점도 측정 방법 및 본딩 장치 |
SG11202003747YA SG11202003747YA (en) | 2017-09-28 | 2018-09-14 | Method for setting conditions for heating semiconductor chip during bonding, method for measuring viscosity of non-conductive film, and bonding device |
JP2019544590A JP7008348B2 (ja) | 2017-09-28 | 2018-09-14 | ボンディングの際の半導体チップの加熱条件設定方法及び非導電性フィルムの粘度測定方法ならびにボンディング装置 |
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JP2015056500A (ja) * | 2013-09-11 | 2015-03-23 | デクセリアルズ株式会社 | アンダーフィル材、及びこれを用いた半導体装置の製造方法 |
WO2016056619A1 (ja) * | 2014-10-10 | 2016-04-14 | ナミックス株式会社 | 熱硬化性樹脂組成物及びその製造方法 |
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