WO2015045997A1 - 実装装置および実装方法 - Google Patents

実装装置および実装方法 Download PDF

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Publication number
WO2015045997A1
WO2015045997A1 PCT/JP2014/074630 JP2014074630W WO2015045997A1 WO 2015045997 A1 WO2015045997 A1 WO 2015045997A1 JP 2014074630 W JP2014074630 W JP 2014074630W WO 2015045997 A1 WO2015045997 A1 WO 2015045997A1
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WIPO (PCT)
Prior art keywords
heating means
profile
temperature
semiconductor chip
set temperature
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PCT/JP2014/074630
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English (en)
French (fr)
Inventor
幸治 西村
寺田　勝美
祐樹 真下
幹夫 川上
Original Assignee
東レエンジニアリング株式会社
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Priority to JP2015539144A priority Critical patent/JPWO2015045997A1/ja
Publication of WO2015045997A1 publication Critical patent/WO2015045997A1/ja

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • B23K20/023—Thermo-compression bonding
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Definitions

  • the present invention relates to a mounting apparatus and a mounting method for bonding a semiconductor chip to a wiring board by thermocompression bonding.
  • solder is applied or solder bumps are formed on at least one of the semiconductor chip and the wiring board, and the semiconductor chip is bonded to the wiring board by thermocompression bonding. .
  • the two-field recognition means 108 confirms the relative position of the semiconductor chip 102 sucked and held by the thermocompression bonding tool 104 and the wiring board 103 held by the stage 107.
  • the thermocompression bonding tool 104 is lowered to press the semiconductor 102 against the wiring board 103, and the heating means 105 is operated for a predetermined time to melt the solder by heating the thermocompression bonding tool.
  • the operation of the heating means 105 is stopped to lower the temperature of the thermocompression bonding tool, and the thermocompression bonding process related to joining ends.
  • a pattern of temporal change in the bonding portion temperature hereinafter referred to as a bonding temperature profile
  • bonding temperatures such as mounting using lead-free solder, mounting of semiconductor chips with many bumps densely packed at a narrow pitch, and mounting of semiconductor chips on a wiring board pre-applied with a thermosetting resin have been adopted.
  • the process margin is narrow and the practical application of the process that requires strict temperature control is progressing.
  • lead-free solder has a higher melting temperature than lead-containing solder, and solder bumping due to excessive temperature rise becomes a problem with multiple bumps and narrow pitch, and thermosetting resin is applied to the wiring board in advance
  • the process margin of the bonding temperature is narrow, and strict temperature control is required.
  • thermocompression bonding semiconductor chips to a wiring board in addition to a method of heating and pressure-bonding semiconductor chips one by one, temporary placement on the wiring board (when thermosetting resin is used, temporary bonding is performed at a temperature lower than the curing temperature).
  • a plurality of semiconductor chips are collectively heat-bonded (hereinafter referred to as “main-bonding”). In anticipation of the occurrence, strict temperature control is required.
  • a method is used in which a preset temperature profile of the heating means is determined in advance so that a desired junction temperature profile is obtained (Patent Document 2).
  • the bonding quality is evaluated while variously changing the setting temperature profile of the heating means, and conditions under which good bonding quality can be obtained. Searching by trial and error. In this case, even if the desired bonding temperature profile is obtained under the condition that good bonding quality is obtained, it is not necessary to know the bonding temperature profile. Therefore, the bonding quality may be evaluated by changing the set temperature profile of the heating means in various ways without measuring the bonding temperature profile.
  • the set temperature profile of the heating means is a process condition
  • a process condition suitable for a certain mounting apparatus is applied to another mounting apparatus
  • the chip component and the substrate having the same specification are used.
  • Bonding failure may occur.
  • the initial process conditions may not be suitable.
  • an object of the present invention is to provide a mounting apparatus and a mounting method in which a set temperature profile of a heating means for obtaining a desired bonding temperature profile can be obtained relatively easily during bonding, and there is no difference in bonding quality. Is to provide.
  • the invention according to claim 1 is a mounting device for bonding a semiconductor chip to a wiring board by thermocompression bonding.
  • the control means has a function of obtaining a set temperature profile of the heating means for obtaining a junction temperature as a desired profile by obtaining a transfer function representing a relationship between the set temperature of the heating means and the junction temperature. It is characterized by having.
  • Invention of Claim 2 is the mounting apparatus of Claim 1, Comprising: A temperature sensor having a function of measuring the temperature in the vicinity of the joint, The control means has a function of inputting the output signal of the temperature sensor and storing it in a time series, and the heating means has a specific set temperature profile in a state where the semiconductor chip is overlapped with the wiring board held on the stage. And a function for obtaining the transfer function from the profile of the output signal of the temperature sensor.
  • the invention according to claim 3 is a mounting method in which a semiconductor chip is bonded to a wiring board by thermocompression bonding, Mounting having a stage for holding a wiring board, a thermocompression tool for pressing a semiconductor chip against the wiring board, a heating means for heating the thermocompression bonding tool, and a temperature sensor having a function of measuring the temperature near the joint Using the device, Based on the output signal profile of the temperature sensor when the heating unit is operated at a specific set temperature profile in a state where the semiconductor chip is overlapped with the wiring board held on the stage, the set temperature and bonding of the heating unit are bonded.
  • the transfer function representing the relationship between the temperature of the parts is obtained, and the set temperature of the heating means for obtaining a desired profile of the junction temperature in a state where the semiconductor chip overlaps the wiring board held on the stage from the transfer function It is characterized by obtaining a profile.
  • FIG. 1 It is a figure which shows the structure of the mounting apparatus of one Embodiment in this invention. It is a figure explaining the relationship between the setting temperature profile of a heating means and joining temperature profile based on this invention. It is the figure which showed the relationship between the setting temperature profile of a heating means and junction temperature profile based on this invention by the relationship of a function and an inverse function. It is a figure explaining calculating
  • FIG. 1 is a diagram for explaining an embodiment of the present invention.
  • a mounting apparatus 1 joins a bump electrode 21 of a semiconductor chip 2 and a solder electrode 31 of a wiring board 3 to attach the semiconductor chip 2 to the wiring board.
  • 3 is an apparatus to be mounted.
  • the mounting apparatus 1 includes a thermocompression bonding tool 4 having a function of sucking and holding the semiconductor chip 2, a heating unit 5 having a function of heating the thermocompression bonding tool 4, a driving device 6 having a function of moving the thermocompression bonding tool 4 up and down, and a wiring board.
  • FIG. 3 has a stage 7 having a function of holding 3, a thermocompression bonding tool 4, a heating means 5, a driving device 6, and a control means 10 for controlling the functions of the stage 7 as basic components.
  • the mounting apparatus 1 is further provided with a temperature sensor 11 for measuring the junction temperature or the temperature in the vicinity of the junction.
  • the temperature sensor 11 is placed near the surface of the stage 7.
  • the present invention is not limited to this. For example, if the temperature sensor 11 is incorporated in a dummy chip, a value extremely close to the actual junction temperature can be obtained.
  • FIG. 1 shows a state after the alignment of the semiconductor chip 2 and the wiring board 3 is completed. When the alignment is performed, a two-field recognition unit is used as shown in FIG. It is done.
  • the control means 10 includes whether or not the semiconductor chip 2 is attracted by the thermocompression bonding tool 4, the vertical position and pressure of the driving means 6, the presence or absence of the wiring board 3 held by the stage 7, and the movement and rotation of the stage 7 in the XY plane.
  • the computer has a calculation function for performing various calculations and a storage function for storing data such as input data and a calculation program.
  • thermocompression bonding tool that holds the semiconductor chip 2 by suction so as to bring the bump electrode 21 and the solder electrode 31 close by a command from the control means 10.
  • the thermocompression bonding tool 4 is heated to a predetermined temperature by the heating means 5.
  • the contact portion between the bump electrode 21 and the solder electrode 31 is heated by the heat transmitted through the semiconductor chip 2, and the solder electrode 31 is melted.
  • the control means 10 turns off the heating means 5 to finish the heating and complete the joining.
  • the heating means 5 may be operated at the stage where the bump electrode 21 is in contact with the thermosetting resin. In any case, a junction is formed with the semiconductor chip 2 overlapping the wiring substrate 3, and heating of the junction is started.
  • FIG. 2 is an example showing the relationship between the bonding temperature profile and the set temperature profile of the heating means 5.
  • u (t) is a function representing the set temperature profile of the heating means
  • y (t) is a function representing the junction temperature profile.
  • the actual junction temperature profile y ( t) is different from ro (t) (on the right side of FIG. 2, the dotted line is ro (t) and the solid line is y (t)).
  • a time delay occurs and the steady state temperature tends to be low. This tendency is as described in the problem to be solved by the invention.
  • t) is obtained by trial and error.
  • the inverse function of the function h, u (t) hi (y (t)) (2)
  • a set temperature profile of the heating means 5 that can obtain a desired junction temperature profile is obtained by obtaining an inverse function hi that establishes the following formula.
  • the relationship between the function h and the inverse function hi is as shown in FIG. 3, and the inverse function hi derives the set temperature profile u (t) of the heating means 5 with the junction temperature profile y (t) as an input. For this reason, as shown in FIG. 4, if a desired profile ro (t) is used as the junction temperature profile u (t), a set temperature profile that is a desired junction temperature profile is derived.
  • Step 1 a transfer function representing the relationship between the set temperature of the heating means 2 and the junction temperature is obtained, (Step 2) an inverse transfer function is obtained from the transfer function, and (Step) an equation including the inverse transfer function is obtained as an inverse Laplace. A method of converting to obtain hi is used.
  • the junction temperature profile when the set temperature of the heating means 5 is operated as a specific profile in a state where the semiconductor chip 2 is overlapped with the wiring substrate 3 held on the stage 7.
  • a transfer function is estimated from y (t).
  • the specific profile is a pulse profile, a step function profile, a ramp-like profile that increases linearly, and the like, and a plurality of specific profiles may be combined when estimating the transfer function.
  • An example in which the set temperature of the heating means 5 is a step function profile is shown in FIG.
  • the junction temperature profile is obtained by recording the measured value of the temperature sensor 11 in time series by the control means 10.
  • the general formula of the transfer coefficient is estimated (first-order lag, first-order lag + dead time, etc.) from the junction temperature profile when the set temperature of the heating means 5 is used as a specific profile. Find the parameters.
  • the case where the set temperature profile of the heating means 5 is a step function as shown in FIG. 5 will be described as an example. If the junction temperature profile is FIG. 7, the general function of the first-order lag system as the transfer function H (s) will be described.
  • H (s) K / ( ⁇ s + 1) (3) Applies.
  • Tr is a set temperature to be raised stepwise
  • T0 is a steady value after the junction temperature is raised
  • t0 is the time until the increase in the junction temperature reaches 0.632 times Tr (based on the step of increasing the set temperature stepwise).
  • the general expression of the transfer function is not different if the mounting apparatus has the same specification, if the general expression is stored in the control means 10, the joining means 10 uses the recorded junction temperature profile. It is also possible to calculate each parameter. As described above, the transfer function H (s) representing the relationship between the set temperature of the heating means 2 and the junction temperature is obtained.
  • U (s) Hi (s) Y (s) (6) It is expressed by the following formula. (Fig. 7)
  • U (s) Hi (s) Y (s) including the inverse transfer function Hi (s) is subjected to inverse Laplace transform to obtain a function hi.
  • Hi (s) is ( ⁇ s + 1) / K as an example
  • u (t) ⁇ / K ⁇ y (t) / dt + 1 / K ⁇ y (t) (7)
  • the relationship between the junction temperature profile y (t) and the set temperature profile u (t) of the heating means 5 can be expressed as a mathematical expression.
  • Step 1 to Step 3 are described separately. However, if the general expression of the transfer function is known, the control unit 10 performs a process of substituting the parameter obtained in Step 1 into the difference equation of Step 3. You can go.
  • Whether or not the set temperature profile obtained above is appropriate may be determined by operating the heating means 5 with the set temperature profile and confirming that the junction temperature profile is as desired. When the junction temperature profile is confirmed, the temperature sensor 11 may be used, and if the junction temperature profile is different from the desired one, the set temperature profile may be finely corrected. Further, in actual mounting, the set temperature profile of the heating unit 5 is assumed to be obtained above, and the junction temperature (temperature near the junction) is monitored by the temperature sensor 11 to set the set temperature of the heating unit 5. Fine adjustment may be performed by PID control or the like.
  • thermocompression bonding tool 4 has a function of sucking the semiconductor chip 2.
  • the semiconductor chip 2 is temporarily placed on the wiring substrate 3, the function of sucking the semiconductor chip 2. Is unnecessary.
  • the mounting method and mounting apparatus according to the present invention are particularly suitable for the case where strict temperature control is required at the time of bonding between the semiconductor chip and the substrate.

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Abstract

　接合時に、所望の接合温度プロファイルを得るための、加熱手段の設定温度プロファイルを比較的容易に求めることが出来て、接合品質に機差のない実装装置および実装方法を提供する。具体的には、半導体チップを配線基板に加熱圧着して接合する実装で、配線基板を保持するステージと、半導体チップを配線基板に押圧する熱圧着ツールと、熱圧着ツールを加熱する加熱手段と、前記加熱手段を任意の設定温度プロファイルで稼働させる機能を有した制御手段とを備え、前記制御手段が、前記加熱手段の設定温度と、接合部温度の関係を表す伝達関数を得ることで、接合部温度を所望のプロファイルとするための、前記加熱手段の設定温度プロファイルを求める機能を有している、実装装置および実装方法を提供する。

Description

実装装置および実装方法
　本発明は、半導体チップを配線基板に加熱圧着して接合する実装装置および実装方法に関する。
　半導体チップを配線基板に接合する実装方法として、半導体チップまたは配線基板の少なくとも一方にハンダを塗布またはハンダバンプを形成し、半導体チップを配線基板に加熱圧着して接合する方法が従来より知られている。
　この実装方法では、図９に示すような実装装置１００で、熱圧着ツール１０４に吸着保持した半導体チップ１０２とステージ１０７に保持された配線基板１０３を２視野認識手段１０８で相対位置を確認して位置合わせを行った後に、熱圧着ツール１０４を降下させて、半導体１０２を配線基板１０３に圧接させるとともに、加熱手段１０５を所定時間稼働させて熱圧着ツールの加熱によりハンダを溶融させている。ハンダ溶融後は加熱手段１０５の稼働を停止することで熱圧着ツールを降温させ、接合に係る熱圧着過程は終了する。ここで、良好な接合品質を得るためには、熱圧着過程での接合部温度の経時変化パターン（以下接合温度プロファイルと記す）を所定のプロファイルとすることが望まれる。
　特に昨今では、鉛フリーハンダを用いた実装、多バンプが狭いピッチで密集している半導体チップの実装や、予め熱硬化性樹脂が塗布されている配線基板への半導体チップの実装など、接合温度のプロセスマージンが狭く、厳しい温度管理が求められるプロセスの実用化が進んでいる。すなわち、鉛フリーハンダでは鉛含有ハンダに比べ溶融温度が高くなっており、多バンプで狭いピッチでは過昇温によるハンダの突沸が問題となり、熱硬化性樹脂が予め配線基板に塗布されている場合ではハンダ溶融と樹脂硬化のタイミングずれが問題となるため、接合温度のプロセスマージンが狭くなっており、厳密な温度制御が必要となっている。
　また、半導体チップを配線基板に熱圧着する方法として、半導体チップ一つずつを加熱・圧着する方法の他に、配線基板に仮置き（熱硬化性樹脂を介する場合は硬化温度より低温で仮圧着）した複数の半導体チップを一括で熱圧着（以下本圧着と記す）する方法（図１０）も知られており、このような本圧着においては、熱圧着ツール２０４の圧着面内に温度バラツキが生じることも見越して、厳密な温度制御が必要となる。
特開平１１－１２１５０８号公報 特開２０００－１５６５６０号公報
　ところで、接合部の温度制御を行うのに際して、熱伝達に時間を要することから、加熱手段の設定温度の変化に対して、接合部温度の変化には時間的な遅れが生じる。ここで、加熱手段の設定温度の変化が、この時間的な遅れを無視出来る程度に緩やかであれば問題なく、特許文献１に記載のようなＰＩＤ制御によって接合部温度を制御することも可能になる。ところが、昨今の多バンプ化に伴う、バンプ小径化等の理由により、加熱圧着に要する適正時間は短くなっている。このため、加熱手段の設定温度の変化に対して、接合部温度の変化には時間的な遅れが無視出来なくなって、ＰＩＤ制御が適さなくなってきている。
　そこで、所望の接合温度プロファイルになるような、加熱手段の設定温度プロファイルを予め定めておくという手法が用いられている（特許文献２）。所望の接合温度プロファイルとなるような、加熱手段の設定温度プロファイルを定める方法としては、加熱手段の設定温度プロファイルを種々変化させながら、接合品質を評価して、良好な接合品質が得られる条件をトライアンドエラーで探索している。この場合、良好な接合品質が得られている条件で、所望の接合温度プロファイルになっているとしても、その接合温度プロファイルを敢えて知る必要はない。そのため、接合温度プロファイルの測定は行わずに、加熱手段の設定温度プロファイルを種々変化させて、接合品質を評価することもある。
　このように、加熱手段の設定温度プロファイルをプロセス条件にした場合、ある実装装置に適したプロセス条件を、他の実装装置に適用した場合、同一仕様のチップ部品と基板を使うのにもかかわらず、接合不良が生じることがある。また、同じ実装装置でも長期使用することで、当初のプロセス条件が適さなくなることもある。
　このような現象が生じる理由として、加熱手段の設定温度プロファイルは同一であっても、接合温度プロファイルは、装置や使用状況が異なれば必ずしも同一にならないということに起因している。これは、加熱手段や実装装置構成部品の、放熱性などの特性が装置毎に異なったり、経時的に変化しているためと考えられる。
　この対策として、実装装置毎、定期的に加熱手段の設定温度プロファイルをトライアンドエラーによって求めるという方法があるが、人的に多くの工数を要するとともに、実装装置の稼働率も低下して好ましくない。
　そこで、本発明の課題は、接合時に、所望の接合温度プロファイルを得るための、加熱手段の設定温度プロファイルを比較的容易に求めることが出来て、接合品質に機差のない実装装置および実装方法を提供することである。
　上記課題を解決するために、請求項１に記載の発明は、半導体チップを配線基板に加熱圧着して接合する実装装置であって、
配線基板を保持するステージと、半導体チップを配線基板に押圧する熱圧着ツールと、熱圧着ツールを加熱する加熱手段と、前記加熱手段を任意の設定温度プロファイルで稼働させる機能を有した制御手段とを備え、
前記制御手段が、前記加熱手段の設定温度と、接合部温度の関係を表す伝達関数を得ることで、接合部温度を所望のプロファイルとするための、前記加熱手段の設定温度プロファイルを求める機能を有していることを特徴とする。
　請求項２に記載の発明は、請求項１に記載の実装装置であって、
接合部近傍の温度を測定する機能を有した温度センサを更に備え、
前記制御手段が、前記温度センサの出力信号を入力して時系列的に記憶する機能と、前記ステージに保持された配線基板に半導体チップが重なった状態で、前記加熱手段を特定の設定温度プロファイルで稼働して、前記温度センサの出力信号のプロファイルから、前記伝達関数を求める機能とを有していることを特徴とする。
　請求項３に記載の発明は、半導体チップを配線基板に加熱圧着して接合する実装方法であって、
配線基板を保持するステージと、半導体チップを配線基板に押圧する熱圧着ツールと、熱圧着ツールを加熱する加熱手段と、接合部近傍の温度を測定する機能を有した温度センサとを有した実装装置を用い、
前記ステージに保持された配線基板に半導体チップが重なった状態で、前記加熱手段を特定の設定温度プロファイルで稼働した時の、前記温度センサの出力信号のプロファイルから、前記加熱手段の設定温度と接合部温度の関係を表す伝達関数を求め、前記伝達関数から、前記ステージに保持された配線基板に半導体チップが重なった状態で、接合部温度を所望のプロファイルにするための、加熱手段の設定温度プロファイルを求めることを特徴とする。
　本発明により、接合時に、所望の接合温度プロファイルを得るための、加熱手段の設定温度プロファイルを比較的容易に求めることが出来て、接合品質に機差のない実装装置および実装方法が提供される。
本発明における一実施形態の実装装置の構成を示す図である。 本発明に係る、加熱手段の設定温度プロファイルと接合温度プロファイルの関係を説明する図である。 本発明に係る、加熱手段の設定温度プロファイルと接合温度プロファイルの関係を、関数と逆関数の関係で示した図である。 本発明に係る、逆関数から加熱手段の設定温度プロファイルを求めることを説明する図である。 本発明に係る、加熱手段の設定温度を特定のプロファイルとした例（ステップ関数的）である。 本発明に係る、加熱手段の設定温度プロファイルがステップ関数的であるときの、接合温度プロファイルを示す図である。 本発明に係る、加熱手段の設定温度と接合温度の関係を伝達関数で示した図である。 本発明に係る、差分方程式から加熱手段の設定プロファイルを求める過程を示す図である。 実装装置で半導体チップと配線基板を接合する工程の一例を示す図である。 配線基板上に仮置された複数の半導体チップを一括して熱圧着する工程を示す図である。
　本発明の実施形態について、図面を用いて説明する。
図１は、本発明の一実施形態を説明するための図であり、実装装置１は半導体チップ２のバンプ電極２１と、配線基板３のハンダ電極３１を接合して、半導体チップ２を配線基板３に実装する装置である。実装装置１は、半導体チップ２を吸着保持する機能を有する熱圧着ツール４、熱圧着ツール４を加熱する機能を有する加熱手段５、熱圧着ツール４を昇降させる機能を有する駆動装置６、配線基板３を保持する機能を有するステージ７と、熱圧着ツール４、加熱手段５、駆動装置６およびステージ７の機能を制御する制御手段１０を基本構成要素としている。実装装置１は、更に、接合部温度または接合部近傍の温度を測定するための温度センサ１１も配置されている。図１において、温度センサ１１はステージ７表面近くに置かれているが、これに限定することはなく、例えばダミーチップに組み込めば、実際の接合部温度に極めて近い値を得ることが出来る。また、図１においては、半導体チップ２と配線基板３の位置合わせが済んだ後の状態を示しているが、位置合わせを行うに際しては、図９（ａ）のように２視野認識手段が用いられる。
　制御手段１０は、熱圧着ツール４による半導体チップ２の吸着有無、駆動手段６の上下位置および加圧力、ステージ７による配線基板３の保持有無およびステージ７のＸＹ面内における移動と回転のような機械的な制御を行う機能と、加熱手段の設定温度を任意のプロファイルにして加熱手段を稼働させる加熱制御機能と、温度センサ１１の出力信号や２視野認識手段の画像データを入力する入力機能と、各種演算を行う演算機能と、入力データ等のデータや演算プログラムを保存する記憶機能を有している。
　この実装装置１では、半導体チップ２と配線基板３の位置合わせを行った後に、制御手段１０からの指令により、バンプ電極２１とハンダ電極３１を接近させるよう半導体チップ２を吸着保持した熱圧着ツール４を降下させ、バンプ電極２１がハンダ電極３１に接触した段階で、加熱手段５によって熱圧着ツール４を所定の温度まで加熱する。半導体チップ２を伝わった熱により、バンプ電極２１とハンダ電極３１の接触部は加熱され、ハンダ電極３１が溶融する。所定時間後に、制御手段１０は加熱手段５をオフとして加熱を終了して接合を完了させる。なお、配線基板３に予め熱硬化性樹脂が塗布されている場合においては、バンプ電極２１が熱硬化性樹脂に接触した段階で加熱手段５を稼働させる時もある。いずれにしても、配線基板３に半導体チップ２が重なった状態で接合部が形成され、接合部の加熱が開始される。
　以下、この実装装置１を用いて半導体チップ２を配線基板３に実装する際、所望の接合温度プロファイルとするための、加熱手段の設定温度プロファイルを得る方法を説明する。図２は、接合温度プロファイルと、加熱手段５の設定温度プロファイルの関係示す一例である。図２において、ｕ（ｔ）は、加熱手段の設定温度プロファイルを表す関数であり、ｙ（ｔ）は接合温度プロファイルを表す関数である。また、加熱手段の設定温度と接合部温度の関係が関数ｈで示せれば、
ｙ（ｔ）＝ｈ（ｕ（ｔ））　　　　　・・・・・（１）
と表すことが出来る。
ここで、所望の接合温度プロファイルをｒｏ（ｔ）として、加熱手段５の設定温度プロファイルをｕ（ｔ）＝ｒｏ（ｔ）とすれば、図２に示すように、実際の接合温度プロファイルｙ（ｔ）はｒｏ（ｔ）と異なる（図２の右側で、点線がｒｏ（ｔ）、実線がｙ（ｔ））。一般的には、時間遅れが生じ、定常状態の温度が低くなる傾向がある。このような傾向があることについては、発明が解決しようとする課題において述べたとおりであり、従来は接合温度プロファイルｙ（ｔ）が所望のプロファイルｒｏ（ｔ）となるような設定温度プロファイルｕ（ｔ）を試行錯誤で求めていたことも前述のとおりである。
　本発明においては、関数ｈの逆関数であって、
ｕ（ｔ）＝ｈｉ（ｙ（ｔ））　　　　　・・・・・（２）
なる式を成立させる逆関数ｈｉを求めることにより、所望の接合温度プロファイルが得られる、加熱手段５の設定温度プロファイルを導出しようとするものである。関数ｈと逆関数ｈｉの関係は、図３に示すとおりで、逆関数ｈｉは、接合温度プロファイルｙ（ｔ）を入力として、加熱手段５の設定温度プロファイルｕ（ｔ）を導き出すものである。このため、図４に示すように、接合温度プロファイルｕ（ｔ）として、所望のプロファイルｒｏ（ｔ）を用いれば、所望の接合温度プロファイルとなる設定温度プロファイルが導出されることになる。
　そこで、関数ｈｉがどのような関数であるかを求める必要があり、そのための方法を以下に記す。すなわち、（Ｓｔｅｐ１）加熱手段２の設定温度と、接合部温度との関係を表す伝達関数を求め、（Ｓｔｅｐ２）伝達関数から逆伝達関数を求め、（Ｓｔｅｐ）逆伝達関数を含む式を逆ラプラス変換してｈｉを得る、という方法を用いる。
　まず、Ｓｔｅｐ１で伝達関数を求めるのに際しては、ステージ７に保持された配線基板３に半導体チップ２が重なった状態で、加熱手段５の設定温度を特定のプロファイルとして稼働した時の、接合温度プロファイルｙ（ｔ）から伝達関数を推定する。ここで、特定のプロファイルとは、パルス的なプロファイル、ステップ関数的なプロファイル、直線的に増加するランプ的なプロファイル等であり、伝達関数の推定に際しては、特定のプロファイルを複数組み合わせても良い。加熱手段５の設定温度をステップ関数的なプロファイルとした例を図５に示す。なお、接合温度プロファイルは温度センサ１１の測定値を制御手段１０が時系列的に記録して得られる。
　伝達関数の推定に際しては、加熱手段５の設定温度を特定のプロファイルとし稼働した時の接合温度プロファイルから、伝達係数の一般式を推定（一次遅れ、一次遅れ＋むだ時間、等）してから各パラメータを求める。図５に示すような、加熱手段５の設定温度プロファイルがステップ関数的である場合を例に説明すると、接合温度プロファイルが図７であるならば、伝達関数Ｈ（ｓ）として一次遅れ系の一般式、
Ｈ（ｓ）＝Ｋ／（τｓ＋１）　　　　　・・・・・（３）
が適用される。ここで、パラメータであるＫおよびτは、
Ｋ＝Ｔ０／Ｔｒ、τ＝ｔ０となる。
ここで、Ｔｒはステップ的に上昇させる設定温度、Ｔ０は接合部温度の上昇後の定常値、
ｔ０は（設定温度をステップ的に上昇させる段階を基点として）接合部温度の上昇分がＴｒの０．６３２倍に達するまでの時間である。
なお、同じ仕様の実装装置であれば、伝達関数の一般式が異なることはないので、その一般式を制御手段１０に記憶させておけば、接合手段１０は、記録されている接合温度プロファイルを用いて各パラメータを算出することも出来る。
以上により、加熱手段２の設定温度と、接合部温度との関係を表す伝達関数Ｈ（ｓ）が求まる。なお、加熱手段の設定温度をラプラス変換したものをＵ（ｓ）、接合部温度をラプラス変換したものをＹ（ｓ）とすると、Ｕ（ｓ）とＹ（ｓ）の関係は
Ｙ（ｓ）＝Ｈ（ｓ）Ｕ（ｓ）　　　　　・・・・・（４）
なる式で表される。（図７）
　次に、Ｓｔｅｐ２として、伝達関数Ｈ（ｓ）から逆伝達関数Ｈｉ（ｓ）を求めるのであるが、逆伝達関数Ｈｉ（ｓ）は伝達関数１／Ｈ（ｓ）として求まる。
そこで、Ｈ（ｓ）＝Ｋ／（τｓ＋１）の場合では、
Ｈｉ（ｓ）＝（τｓ＋１）／Ｋ　　　　　・・・・・（５）
となる。ここで、Ｕ（ｓ）とＹ（ｓ）の関係は
Ｕ（ｓ）＝Ｈｉ（ｓ）Ｙ（ｓ）　　　　　・・・・・（６）
なる式で表される。（図７）
　次のＳｔｅｐ３では、この逆伝達関数Ｈｉ（ｓ）を含む、Ｕ（ｓ）＝Ｈｉ（ｓ）Ｙ（ｓ）を逆ラプラス変換して、関数ｈｉを求める。
ここで、Ｈｉ（ｓ）が、（τｓ＋１）／Ｋの場合を例にすると、
ｕ（ｔ）＝τ／Ｋ・ｙ（ｔ）／ｄｔ＋１／Ｋ・ｙ（ｔ）　　　・・・・・（７）
となり、接合温度プロファイルｙ（ｔ）と、加熱手段５の設定温度プロファイルｕ（ｔ）の関係を数式化することが出来る。
ただし、制御手段１０で備えるような演算機能においては、与えられた接合温度プロファイルｙ（ｔ）を用いて、加熱手段５の設定温度プロファイルｕ（ｔ）を式（７）から直接導き出すことは困難である。そこで、式（８）のような差分方程式を用いて数値計算を行う。
Ｕ（ｎ）＝τ／Ｋ・｛Ｙ（ｎ）－Ｙ（ｎ－１）｝／Δｔ＋１／Ｋ・Ｙ（ｎ）　・・（８）
上式で、Δｔはサンプリング周期である。
ここで、図８に示すように、Ｙ（ｎ）を所望の温度プロファイルｒｏ（ｎ）とすることで、Ｕ（ｎ）として、求めている加熱手段の設定温度のプロファイルｏｉ（ｎ）を得る。更に、これを直線近似化すれば、プロファイルを特徴づける時間間隔ｔ１、ｔ２、・・と、それに対応した温度Ｔ０、Ｔ１、Ｔ２・・を得ることも出来る。
　以上、本実施形態では、Ｓｔｅｐ１からＳｔｅｐ３に分けて説明したが、伝達関数の一般式が判っていれば、Ｓｔｅｐ１で得たパラメータをＳｔｅｐ３の差分方程式に代入するような処理を、制御手段１０が行っても良い。
　以上で得た、設定温度プロファイルが適正であるか否かは、該設定温度プロファイルで加熱手段５を稼働して、接合温度プロファイルが所望のとおりになっているかを確認すれば良い。接合温度プロファイルの確認に際しては温度センサ１１を用い、接合温度プロファイルが所望のものと異なる場合においては、設定温度プロファイルの微修正を行っても良い。また、実際の実装に際しては、加熱手段５の設定温度プロファイルを上で得られたものとしつつ、温度センサ１１で接合部温度（接合部近傍温度）をモニタリングして、加熱手段５の設定温度をＰＩＤ制御等により、微調整しても良い。
　なお、本実施形態において、熱圧着ツール４が半導体チップ２を吸着する機能を備えているが、半導体チップ２が配線基板３上に仮置きされている場合においては、半導体チップ２を吸着する機能は不要である。
　本発明における実装方法および実装装置では、半導体チップと基板の接合で、接合時の厳密な温度管理が必要な場合に特に適す。
　　１　　実装装置
　　２　　半導体チップ
　　３　　配線基板
　　４　　熱圧着ツール
　　５　　加熱手段
　　６　　駆動機構
　　７　　ステージ
　１０　　制御手段
　１１　　温度センサ

Claims (3)

  1. 半導体チップを配線基板に加熱圧着して接合する実装装置であって、
    配線基板を保持するステージと、
    半導体チップを配線基板に押圧する熱圧着ツールと、
    熱圧着ツールを加熱する加熱手段と、
    前記加熱手段を任意の設定温度プロファイルで稼働させる機能を有した制御手段とを備え、
    前記制御手段が、
    前記加熱手段の設定温度と、接合部温度の関係を表す伝達関数を得ることで、
    接合部温度を所望のプロファイルとするための、前記加熱手段の設定温度プロファイルを求める機能を有していることを特徴とする実装装置。
  2. 請求項１に記載の実装装置であって、
    接合部近傍の温度を測定する機能を有した温度センサを更に備え、
    前記制御手段が、
    前記温度センサの出力信号を入力して時系列的に記憶する機能と、
    前記ステージに保持された配線基板に半導体チップが重なった状態で、前記加熱手段を特定の設定温度プロファイルで稼働して、前記温度センサの出力信号のプロファイルから、前記伝達関数を求める機能とを有していることを特徴とする実装装置。
  3. 半導体チップを配線基板に加熱圧着して接合する実装方法であって、
    配線基板を保持するステージと、
    半導体チップを配線基板に押圧する熱圧着ツールと、
    熱圧着ツールを加熱する加熱手段と、
    接合部近傍の温度を測定する機能を有した温度センサとを有した実装装置を用い、
    前記ステージに保持された配線基板に半導体チップが重なった状態で、
    前記加熱手段を特定の設定温度プロファイルで稼働した時の、
    前記温度センサの出力信号のプロファイルから、
    前記加熱手段の設定温度と接合部温度の関係を表す伝達関数を求め、
    前記伝達関数から、前記ステージに保持された配線基板に半導体チップが重なった状態で、接合部温度を所望のプロファイルにするための、
    加熱手段の設定温度プロファイルを求めることを特徴とする実装方法。
PCT/JP2014/074630 2013-09-24 2014-09-18 実装装置および実装方法 WO2015045997A1 (ja)

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JP2000312076A (ja) * 1999-04-27 2000-11-07 Matsushita Electric Ind Co Ltd 電子部品接合方法及びそれを用いた装置
JP2005225297A (ja) * 2004-02-12 2005-08-25 Toyota Motor Corp タイヤの温度検出装置
WO2006129561A1 (ja) * 2005-05-31 2006-12-07 National University Corporation Kanazawa University 走査型プローブ顕微鏡およびカンチレバー駆動装置

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JP2000312076A (ja) * 1999-04-27 2000-11-07 Matsushita Electric Ind Co Ltd 電子部品接合方法及びそれを用いた装置
JP2005225297A (ja) * 2004-02-12 2005-08-25 Toyota Motor Corp タイヤの温度検出装置
WO2006129561A1 (ja) * 2005-05-31 2006-12-07 National University Corporation Kanazawa University 走査型プローブ顕微鏡およびカンチレバー駆動装置

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Publication number Priority date Publication date Assignee Title
JP2022187993A (ja) * 2021-06-08 2022-12-20 セメス カンパニー，リミテッド 基板処理方法及び装置、温度制御方法

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